CN106531718A - Programmable fuse structure - Google Patents
Programmable fuse structure Download PDFInfo
- Publication number
- CN106531718A CN106531718A CN201611096971.6A CN201611096971A CN106531718A CN 106531718 A CN106531718 A CN 106531718A CN 201611096971 A CN201611096971 A CN 201611096971A CN 106531718 A CN106531718 A CN 106531718A
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- CN
- China
- Prior art keywords
- isolation structure
- groove isolation
- plough groove
- fleet plough
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
The invention provides a programmable fuse structure, which comprises a substrate, a shallow trench isolation structure at the upper surface of the substrate and a programmable fuse located in the shallow trench isolation structure, wherein the top surface of the shallow trench isolation structure is higher than the upper surface of the substrate; the programmable fuse comprises two first electrodes, two first vertical portions which are respectively connected with the two first electrodes and a first horizontal portion connected with the two first vertical portions; the two first electrodes are located at two ends of the upper surface of the shallow trench isolation structure, the two first vertical portions have a first length along the depth direction of the shallow trench isolation structure, and the first horizontal portion is covered by an isolation material of the shallow trench isolation structure and has a first depth in the shallow trench isolation structure.
Description
Technical field
The present invention relates to a kind of semiconductor device, is espespecially related to a kind of programmable fuse structure.
Background technology
The forming method of conventional polysilicon fuse, including：A substrate is provided, the substrate has isolation structure；Institute
State one layer of silicon oxide of substrate surface thermal oxide；In the silicon oxide and isolation structure surface deposit polycrystalline silicon, to the polysilicon
It is doped；Etch the polysilicon and form fuse-wires structure narrow between the alleviating distention in middle-JIAO of two..The fuse-wires structure that the method is formed, first,
It is unfavorable for controlling the particular location of fusing, may result in the fusing on substrate, other devices on substrate can be affected due to overheated
The normal work of part；Secondly, the substrate surface area that fuse takes is larger, is unfavorable for that the device of densification is integrated, and multiple flat
Capacitor and inductor between capable fuse is larger, easily crosstalk mutually.
The content of the invention
Based on solving the above problems, the invention provides a kind of programmable fuse structure, including：
Substrate；
The fleet plough groove isolation structure on surface over the substrate, the top surface of the fleet plough groove isolation structure are upper higher than the substrate
Surface；
A programmable fuse in fleet plough groove isolation structure, the programmable fuse include two first electrodes, connect respectively
The first level part of two first vertical components of two the first vertical components and connection of two first electrodes；
Wherein, two first electrodes be located at the fleet plough groove isolation structure upper surface two ends, two the first vertical components along
The depth direction of the fleet plough groove isolation structure have the first length, the first level part by fleet plough groove isolation structure every
Cover from material, and there is in the fleet plough groove isolation structure the first depth.
Embodiments in accordance with the present invention, the fuse-wires structure are polysilicon fuse structure.
Embodiments in accordance with the present invention, the width of two electrode are more than the width of the vertical component and the horizontal component
Degree.
Embodiments in accordance with the present invention, the vertical component are identical with the width of the horizontal component.
Embodiments in accordance with the present invention, the isolated material of institute's fleet plough groove isolation structure is silicon oxide.
Embodiments in accordance with the present invention, another fuse-wires structure being additionally included in the fleet plough groove isolation structure.
Embodiments in accordance with the present invention, another programmable fuse include two second electrodes, respectively connection it is two second electric
Second horizontal component of two second vertical components of two the second vertical components and connection of pole；Wherein, two second electrode position
In another two ends of the upper surface of the fleet plough groove isolation structure, two the second vertical components are along the fleet plough groove isolation structure
Depth direction there is the second length, second horizontal component is covered by the isolated material of fleet plough groove isolation structure, and in institute
There is the second depth in stating fleet plough groove isolation structure.
Embodiments in accordance with the present invention, second depth are more than first depth, and second length is more than described
First length.
The angle of embodiments in accordance with the present invention, second horizontal component and the first level part in a non-zero.
Embodiments in accordance with the present invention, multiple other fuse-wires structures being additionally included in fleet plough groove isolation structure are described more
Individual other fuse-wires structures are identical with the fuse-wires structure.
Technical scheme, using fuse-wires structure is arranged in fleet plough groove isolation structure, saves the occupancy of substrate surface
Area, and the isolation structure using fleet plough groove isolation structure carries out being mutually isolated for multiple fuse-wires structures, it is simple；Additionally,
Multiple fuse-wires structures have certain angle in projection, will not be parallel, disturb less, also, using the polycrystalline of vertical component
The thinner thickness of silicon, the larger characteristic of resistance, control here carry out electric smelting and break, and realize precise control fusing position, it is to avoid to lining
The high temperature at bottom affects.
Description of the drawings
Fig. 1 is the profile of programmable fuse structure of the present invention；
Fig. 2 is the top view of programmable fuse structure of the present invention.
Specific embodiment
Referring to Fig. 1 and 2, the invention provides a kind of programmable fuse structure, including：Substrate 1, it is however generally that, the substrate 1
For silicon substrate, it is also likely to be other Semiconductor substrates certainly；It is in the fleet plough groove isolation structure 2 of 1 upper surface of the substrate, described shallow
Groove isolation construction 2 has oxide-isolated material, and the top surface of the fleet plough groove isolation structure 2 is upper higher than the substrate 1
Surface；A programmable fuse in fleet plough groove isolation structure 2, the fuse-wires structure are polysilicon fuse structure；It is described can
Programmable fuse includes two first electrodes 3a and 4a, connects two first electrodes 3a respectively and two first the vertical components 6a and 7a of 4a
And the first level part 5a of connection two first vertical components 6a and 7a；Wherein, two first electrodes 3a and 4a are located at described
The two ends of the upper surface of fleet plough groove isolation structure 2, two the first vertical component 6a and 7a are along the fleet plough groove isolation structure 2
Depth direction has the first length, and the first level part 5a is covered by the isolated material of fleet plough groove isolation structure, and in institute
There is the first depth in stating fleet plough groove isolation structure 2.
Also include another fuse-wires structure, it is described to state another programmable fuse and include two second electrodes 3b and 4b, connect respectively
The second of two the second vertical component 6b and 7b and connection two second the vertical components 6b and 7b of two second electrodes 3b and 4b
Horizontal component 5b；Wherein, two second electrodes 3b and 4b are located at another two ends of the upper surface of the fleet plough groove isolation structure 2, and two
Individual second vertical component 6b and 7b has the second length, second water along the depth direction of the fleet plough groove isolation structure 2
Flat part 5b is covered by the isolated material of fleet plough groove isolation structure 2, and deep with second in the fleet plough groove isolation structure 2
Degree.Wherein, second depth is more than first depth, and second length is more than first length, second water
The angle of flat part and the first level part in a non-zero, preferably 90 degree.The width of described two first and second electrodes
More than first and second vertical component and the width of first and second horizontal component.First and second vertical component effect
Divide identical with the width of first and second horizontal component.
Embodiments in accordance with the present invention, embodiments in accordance with the present invention are additionally included in multiple in fleet plough groove isolation structure
Other fuse-wires structures, the plurality of other fuse-wires structures are identical with the fuse-wires structure, different, the depth of horizontal component
Degree is different, the depth with difference in groove isolation construction.
Finally it should be noted that：Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and and
The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description
Go out the change or variation of other multi-forms.There is no need to be exhaustive to all of embodiment.And thus drawn
Obvious change that Shen goes out or among changing still in protection scope of the present invention.
Claims (10)
1. a kind of programmable fuse structure, including：
Substrate；
The fleet plough groove isolation structure on surface over the substrate, the top surface of the fleet plough groove isolation structure are upper higher than the substrate
Surface；
A programmable fuse in fleet plough groove isolation structure, the programmable fuse include two first electrodes, connect respectively
The first level part of two first vertical components of two the first vertical components and connection of two first electrodes；
Wherein, two first electrodes be located at the fleet plough groove isolation structure upper surface two ends, two the first vertical components along
The depth direction of the fleet plough groove isolation structure have the first length, the first level part by fleet plough groove isolation structure every
Cover from material, and there is in the fleet plough groove isolation structure the first depth.
2. programmable fuse structure according to claim 1, it is characterised in that the fuse-wires structure is polysilicon fuse knot
Structure.
3. programmable fuse structure according to claim 1, it is characterised in that the width of two first electrode is more than institute
State the width of the first vertical component and the first level part.
4. programmable fuse structure according to claim 3, it is characterised in that first vertical component and described first
The width of horizontal component is identical.
5. programmable fuse structure according to claim 1, it is characterised in that the isolated material of institute's fleet plough groove isolation structure
For silicon oxide.
6. programmable fuse structure according to claim 1, it is characterised in that be additionally included in the fleet plough groove isolation structure
In another fuse-wires structure.
7. programmable fuse structure according to claim 6, it is characterised in that another programmable fuse includes two
Second level of two electrodes, two the second vertical components of two the second vertical components for connecting two second electrodes respectively and connection
Part；Wherein, two second electrodes are located at another two ends of the upper surface of the fleet plough groove isolation structure, two the second vertical components
Depth direction along the fleet plough groove isolation structure has the second length, and second horizontal component is by fleet plough groove isolation structure
Isolated material cover, and in the fleet plough groove isolation structure have the second depth.
8. programmable fuse structure according to claim 7, it is characterised in that second depth is deep more than described first
Degree, second length are more than first length.
9. programmable fuse structure according to claim 8, it is characterised in that second horizontal component and described first
Angle of the horizontal component in a non-zero.
10. programmable fuse structure according to claim 6, it is characterised in that be additionally included in fleet plough groove isolation structure
Multiple other fuse-wires structures, the plurality of other fuse-wires structures are identical with the fuse-wires structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096971.6A CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096971.6A CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106531718A true CN106531718A (en) | 2017-03-22 |
| CN106531718B CN106531718B (en) | 2019-02-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611096971.6A Active CN106531718B (en) | 2016-12-02 | 2016-12-02 | A kind of programmable fuse structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3648160A4 (en) * | 2018-08-24 | 2020-06-24 | Shenzhen Weitongbo Technology Co., Ltd. | Electrically programmable fuse, manufacturing method therefor, and storage unit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976035A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | CMOS compatible shallow-trench e-fuse structure and method of manufacturing the same |
| CN102130092A (en) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Fuse device and preparation method thereof |
| CN103794549A (en) * | 2012-10-31 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
| US20140239439A1 (en) * | 2013-02-22 | 2014-08-28 | International Business Machines Corporation | Electrical fuses and methods of making electrical fuses |
-
2016
- 2016-12-02 CN CN201611096971.6A patent/CN106531718B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976035A (en) * | 2005-11-30 | 2007-06-06 | 国际商业机器公司 | CMOS compatible shallow-trench e-fuse structure and method of manufacturing the same |
| CN102130092A (en) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Fuse device and preparation method thereof |
| CN103794549A (en) * | 2012-10-31 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure |
| US20140239439A1 (en) * | 2013-02-22 | 2014-08-28 | International Business Machines Corporation | Electrical fuses and methods of making electrical fuses |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3648160A4 (en) * | 2018-08-24 | 2020-06-24 | Shenzhen Weitongbo Technology Co., Ltd. | Electrically programmable fuse, manufacturing method therefor, and storage unit |
| US10991655B2 (en) | 2018-08-24 | 2021-04-27 | Shenzhen Weitongbo Technology Co., Ltd. | E-fuse and manufacturing method thereof, and memory cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106531718B (en) | 2019-02-05 |
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Effective date of registration: 20181226 Address after: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant after: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20221222 Address after: 256599 East 600m south of the intersection of Yangao Road X030 and Bohua Road, Jingbo Industrial Park, Boxing County Economic Development Zone, Binzhou City, Shandong Province Patentee after: Boxing County Xingye Logistics Co.,Ltd. Address before: 226600 No. 8, Xiao Xing Avenue, Chengdong Town, Haian City, Nantong, Jiangsu. Patentee before: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. |
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