CN106528443A - FLASH management system and method suitable for satellite-borne data management - Google Patents
FLASH management system and method suitable for satellite-borne data management Download PDFInfo
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Abstract
The invention discloses a FLASH management system and method suitable for satellite-born data management. The method comprises the following steps of: combining a plurality of NAND FLASH chips to form a FLASH storage array, and managing the storage array in an assembly line manner; managing FLASH storage blocks in a grouping manner, and carrying out uniform addressing; damaging a FLASH shield; realizing access to a FLASH in an arbitrary manner which comprises read arbitration, write arbitration and erase arbitration; designing a bad block table, manifesting bad block conditions of a logic blocks, and during the use, applying to the bad block table by a management logic for obtaining an intact storage block address; when data is stored in a FLASH page, storing effective data amount information of the page into a Spare area of the page, and in another logic block, storing the data in a formatting manner according to an appointed length so that the data can be reviewed conveniently; when data is read out from the FLASH page, reading the effective data according to the effective data amount information; during data erasing, erasing the data according to the logic blocks; and using a FLASH storage space according to a sub-area manner so as to store different data.
Description
Technical field
The present invention relates to satellite data management domain, more particularly to a kind of FLASH management suitable for spaceborne data management
System and method.
Background technology
Spaceborne data management is mainly used in the management to load data and platform data, and which is related to whole satellite task
Success or failure.Due to various good characteristics (small volume, faster non-volatile, multiple erasability, write and the wiping of NAND FLASH
Except speed and less expensive every bit price etc.), the spaceborne data management of currently the majority is using NAND FLASH as depositing
Storage media.But NAND FLASH are different from ordinary magnetic disc, as NAND FLASH press block erasing, the characteristics of write by page, with
And the life-span of NAND FLASH limits, and causes the data managing method for NAND FLASH, the data structure of complexity is required to
It is supported with Wear leveling algorithm；In addition, generally, load data sends into data management system by serial manner
System, after treatment, data are directly stored in NAND FLASH storage arrays, carry out data readback further according to user's request.
According to such demand, the data record method of log type has been sufficient for, therefore without the need for complicated file system management, and
For aerospace design, have the advantages that low hardware configuration, it is quick start, it is simple and reliable.
In addition, for the high integration demand to system, designing spaceborne data management using the method for Logical Design
System, possesses the integrated ability of IPization.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of be applied to spaceborne data management
FLASH management systems and method, easy, efficient Managed Solution can be provided for spaceborne data management system.
For achieving the above object and other related purposes, the invention provides a kind of NAND suitable for spaceborne data management
FLASH management methods, including：FLASH storage arrays are formed：Multiple NAND FLASH chips are combined to form FLASH storage battle arrays
Row, NAND FLASH are made up of multiple physical blocks, and each physical block is constituted by multiple FLASH pages；Manage FLASH storage arrays address
Reason：All physical blocks of all FLASH memory element of all NAND FLASH chips are addressed jointly, addressing side
Formula is according to FLASH storage arrays addressing incremented by successively line by line；FLASH storage arrays data write：When the FIFO is deposited
When in reservoir, data volume writes a page enough, log-on data write proposes request for utilization to the FLASH memory element, obtains
After must responding, the FLASH memory element is write data into；FLASH storage array data read-outs：It is single to FLASH storages
Unit proposes request for utilization, after being responded, data is read from the FLASH memory element, and is stored in buffering, works as data
When organizing number biography frame enough, group number is passed into a frame and is sent to ground.
Optionally, also include：FLASH storage arrays are using distribution：Subregion, and root are carried out to the FLASH memory element
The size of allocation space is determined according to the storage capacity requirement of data, will be in the FLASH storage arrays with the multiple of a line
Physical block is combined into a logical block, and the least unit of distribution is logical block.
Optionally, also include：FLASH storage arrays data are wiped：Erasing least unit is logical block, is grasped during erasing simultaneously
Make all FLASH chips.
Optionally, also include：FLASH storage array bad block managements：Before write data every time, first read current
FLASH state of memory cells, judges whether last time write data manipulation fails, and after wiping every time, reads all FLASH
State, if detecting the situation of last time write-in block/current erasure block operation failure, labelling last time write-in block/current erasure
Block is bad block.
Optionally, the FLASH memory element also includes for recording the bad block table of the bad block, and the bad block table is deposited
The ad-hoc location of distribution of the storage in the FLASH memory element, used in being loaded into RAM in system electrification, when described bad
When block table occurs bad block marking operation, renewal is stored in the current bad block table in the FLASH memory element.
Optionally, before writing, reading, erasing operation is performed, next good block is first obtained, when operation is completed currently
During block, the next good block for getting is used as subsequent operation block.
Optionally, also include：Data readback address of cache：Data be written into when writing data be continuously stored in it is described
In FLASH memory element, without any data markers；Number is packed the data to during data read-out and passes frame, be issued to ground；
When the data of reading are packaged into Frame, data field front end is used for into storage address information, so that ground is according to address information
To specify the corresponding data of playback.
Optionally, also include：Data write is write according to page, and data are read to be then that logically block reads.For
Ensure that each logical block data stores independence, data are written to the data volume of logical block and meet integer number and pass and pass under frame.
It is so designed that logical block will be caused to waste some memory spaces to be not used, but for whole memory space, wastes
Space be very small.
Optionally, also include：For storage multiple types of data, FLASH is carried out subregion, the least unit of subregion by system
For logical block.In addition, system distributes a number of logical block is used for storing system information and bad block table information.
The present invention also provides a kind of NAND FLASH management systems suitable for spaceborne data management, including：Array combination
Unit, for combining to form FLASH storage arrays by multiple NAND FLASH chips；Address administration unit, for by all institutes
The all physical blocks for stating all FLASH memory element of NAND FLASH chips are addressed jointly, and addressing mode is according to institute
State the addressing incremented by successively line by line of FLASH storage arrays, and the multiple physical blocks that will be in the FLASH storage arrays with a line
It is combined into a logical block；Data write unit, for when data volume writes a page enough in the FIFO memory, opening
Dynamic data write, proposes request for utilization to the FLASH memory element, after being responded, writes data into the FLASH storages
Unit；After the full logical block of data write, the next good block by checking bad block table acquisition is jumped to；It is written to the number of logical block
Meet according to amount and pass under integer number biography frame；Data read-out unit, for proposing request for utilization to the FLASH memory element, obtains
After must responding, data are read from the FLASH memory element, and is stored in the FIFO memory, and when data are enough
When one number of group passes frame, group number is passed into frame and is sent to ground；The Data Frontend write storage address information of reading, refers to for ground
Determine playback of data；Data wipe unit, for when data erasing is performed, logically block is simultaneously all to what is be related to
FLASH is wiped；Bad-block managing unit, by reading the modes such as write operation state, erase status, data read-out verification, such as
Fruit occurs writing failure, erasing failure, the situation of verification failure, then labelling place logical block is bad block, updates bad block table and stores；
Next good block is provided for write operation, read operation, erasing operation；Bad block table is loaded into into RAM during system electrification in case using.
The present invention is applied to the NAND FLASH management systems of spaceborne data management, and each unit can directly pass through hardware
Logical design realizes that process without the need for any processor intervention, this will be carried out the IPization of several guard systems, can be by several guard systems
It is integrated in other modules of satellite such as house keeping computer, the integration of micro-nano satellite electronic system is greatly improved, reduction is defended
Star power consumption, volume and quality have very big help.
Description of the drawings
Fig. 1 is the schematic flow sheet of the NAND FLASH management methods that the present invention is applied to spaceborne data management.
Fig. 2 is the applied environment schematic diagram of the NAND FLASH management methods that the present invention is applied to spaceborne data management.
Fig. 3 is NAND of the present invention suitable for the preferred embodiment of the NAND FLASH management methods of spaceborne data management
The pin scattergram of FLASH chip.
Fig. 4 is the present invention suitable for the preferred embodiment of the NAND FLASH management methods of spaceborne data management
The schematic diagram of FLASH storage arrays.
Fig. 5 is the present invention suitable for the preferred embodiment of the NAND FLASH management methods of spaceborne data management
The addressing schematic diagram of FLASH storage arrays.
Fig. 6 is the present invention suitable for the preferred embodiment of the NAND FLASH management methods of spaceborne data management
FLASH storage arrays data write schematic diagram.
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through concrete realities different in addition
The mode of applying is carried out or applies, the every details in this specification can also based on different viewpoints with application, without departing from
Various modifications and changes are carried out under the spirit of the present invention.It should be noted that, in the case where not conflicting, following examples and enforcement
Feature in example can be mutually combined.
It should be noted that the diagram provided in following examples only illustrates the basic structure of the present invention in a schematic way
Think, the component relevant with the present invention is only shown then in schema rather than according to component count during actual enforcement, shape and size
Draw, which is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout kenel
It is likely more complexity.
Refering to shown in Fig. 1, Fig. 1 is that the flow process of the NAND FLASH management methods that the present invention is applied to spaceborne data management is shown
It is intended to.The present invention is applied to the NAND FLASH management methods of spaceborne data management, including：
Step S1：FLASH storage arrays are formed：Multiple NAND FLASH chips are combined to form FLASH storage arrays,
NAND FLASH are made up of multiple physical blocks, and each physical block is constituted by multiple FLASH pages.Each described NAND FLASH chip
Including multiple FLASH memory element, each described FLASH memory element is included for storing the FIFO memory of data to be written
And multiple physical blocks, each described physical block includes multiple pages；
Step S2：FLASH storage array address administrations：By all FLASH storages of all NAND FLASH chips
All physical blocks of unit are addressed jointly, and addressing mode is incremented by successively line by line according to the FLASH storage arrays
Addressing, and a logical block will be combined into multiple physical blocks of a line in the FLASH storage arrays；
Step S3：FLASH storage arrays data write：When in the FIFO memory, data volume writes a page enough
When, log-on data write proposes request for utilization to the FLASH memory element, after being responded, writes data into described
FLASH memory element；
Step S4：FLASH storage array data read-outs：Request for utilization is proposed to the FLASH memory element, is responded
Afterwards, data are read from the FLASH memory element, and is stored in the FIFO memory, when data organize a number enough
When passing frame, group number is passed into frame and is sent to ground.
The present invention is applied to the NAND FLASH management methods of spaceborne data management, includes the group of NAND FLASH chips
Conjunction, the management of FLASH storage arrays, the address administration of FLASH storage arrays, the write of FLASH storage arrays data, FLASH are deposited
Storage array data reads and number passes frame data, directly can be realized by hardware logic design, be intervened without the need for any processor
Process, this will be carried out the IPization of several guard systems, several guard systems can be integrated into satellite other modules such as house keeping computer
In, the integration of micro-nano satellite electronic system is greatly improved, has very big side to reducing satellite power consumption, volume and quality
Help.
Further, for spaceborne data management system, it should at least one data can be deposited, therefore, this
The bright NAND FLASH management methods suitable for spaceborne data management, also include：
Subregion is carried out to the FLASH memory element, and the big of allocation space is determined according to the storage capacity requirement of data
It is little, a logical block, the least unit of distribution will be combined into multiple physical blocks of a line in the FLASH storage arrays
It is logical block.
Further, the present invention is applied to the NAND FLASH management methods of spaceborne data management, also includes：
FLASH storage arrays data are wiped：FLASH storage arrays data are wiped：Erasing least unit is logical block, is wiped
When simultaneously operate all FLASH chips.Each described FLASH memory element also includes input pin and output pin, works as execution
When data are wiped, the input pin for enabling all FLASH memory element performs erasing move, the least unit of data erasing
It is physical block.
Further, the present invention is applied to the NAND FLASH management methods of spaceborne data management, also includes：
FLASH storage array bad block managements：Before write data/erasing data every time, first read current FLASH and deposit
Storage unit state, judges whether last time write data/erasing data manipulation fails, if detecting last time write data/erasing
The situation of data manipulation failure, then the logical block of labelling last time write data/erasing data manipulation is bad block.Preferably, it is described
FLASH memory element also includes for recording the bad block table of the bad block, the bad block table is stored in the FLASH storages single
The ad-hoc location of the distribution in unit, used in being loaded into RAM in system electrification, when the bad block table occurs bad block marking operation
When, renewal is stored in the current bad block table in the FLASH memory element.
Further, the present invention is applied to the NAND FLASH management methods of spaceborne data management, also includes：
Data readback address of cache：Data are written into data when writing and are continuously stored in the FLASH memory element,
Without any data markers；Number is packed the data to during data read-out and passes frame, be issued to ground；In the data packing that will be read
During into Frame, data field front end is used for into storage address information, so that ground is played back accordingly to specify according to address information
Data.
It is in the present invention suitable for a preferred embodiment of the NAND FLASH management methods of spaceborne data management, described
The quantity of NAND FLASH chips is 4, and each described NAND FLASH chip includes 2 FLASH memory element, described in each
FLASH memory element includes 8192 physical blocks, and each described physical block includes 64 pages, and the size of each page is 4KB.
So, write data into the FLASH memory element, the unit of writing address is page, conversion relation formula is：
Logical block=writing address/512；
FLASH memory element=writing address MOD 8；
Physical block=logical block * 8+FLASH memory element.
Data are read from the FLASH memory element, the unit for reading address is page, conversion relation formula is：
Logical block=reading address/512；
FLASH memory element=reading address MOD 8；
Physical block=logical block * 8+FLASH memory element.
Data write is write according to page, and data are read to be then that logically block reads, in order to ensure each logic
Block data storage independence, data be written to the data volume of logical block meet integer number pass frame under pass.For storage multiple types
FLASH is carried out subregion by type data, system.The least unit of subregion is logical block.In addition, system distributes a number of logic
Block is used for storing system information and bad block table information.
Present invention also offers a kind of NAND FLASH management systems suitable for spaceborne data management, above-mentioned for realizing
The present invention is applied to the NAND FLASH management methods of spaceborne data management, and specifically, the present invention is applied to spaceborne data management
NAND FLASH management systems, including：
Array combination unit, for multiple NAND FLASH chips are combined to form FLASH storage arrays, wherein, each
The NAND FLASH chips include multiple FLASH memory element, and each described FLASH memory element includes input pin, defeated
Go out pin, the FIFO memory for storing data to be written and multiple physical blocks, each described physical block includes multiple pages；
Address administration unit, for by the property of all FLASH memory element of all NAND FLASH chips
Reason block is addressed jointly, and addressing mode is, according to FLASH storage arrays addressing incremented by successively line by line, and will to be in
A logical block is combined into multiple physical blocks of a line in the FLASH storage arrays；
Data write unit, for when data volume writes a page enough in the FIFO memory, log-on data is write
Enter, request for utilization is proposed to the FLASH memory element, after being responded, write data into the FLASH memory element, number
After according to the full logical block of write, the next good block by checking bad block table acquisition is jumped to, the data volume for being written to logical block is full
Sufficient integer number is passed and is passed under frame；
Data read-out module, for the FLASH memory element propose request for utilization, after being responded, by data from
Read in the FLASH memory element, and be stored in the FIFO memory, and when data are organized a number enough and pass frame, will
Group number passes frame and is sent to ground, and the Data Frontend write storage address information of reading specifies playback of data for ground；
Using allocation unit, for carrying out subregion to the FLASH memory element, and according to the storage capacity requirement of data
Determine the size of allocation space；
Data wipe unit, perform erasing moves for when data erasing is performed, enabling all FLASH；
Bad-block managing unit, by reading the modes such as write operation state, erase status, data read-out verification, if there is
Failure, erasing failure, the situation of verification failure are write, then labelling place logical block is bad block, updates bad block table and stores, to write behaviour
Work, read operation, erasing operation provide next good block, and bad block table is loaded into RAM during system electrification in case using.；
Data readback address mapping unit, is continuously stored in the FLASH for data are written into when data write
In memory element, without any data markers；Number is packed the data in data read-out and passes frame, be issued to ground；And
When the data of reading are packaged into Frame, data field front end is used for into storage address information, so that ground is according to address information
To specify the corresponding data of playback.
The present invention is applied to the NAND FLASH management systems of spaceborne data management, and each unit can directly pass through hardware
Logical design realizes that process without the need for any processor intervention, this will be carried out the IPization of several guard systems, can be by several guard systems
It is integrated in other modules of satellite such as house keeping computer, the integration of micro-nano satellite electronic system is greatly improved, reduction is defended
Star power consumption, volume and quality have very big help.
Below in conjunction with the drawings and specific embodiments, the NAND FLASH managers of spaceborne data management are applied to the present invention
Method is described in detail.
Refering to shown in Fig. 2, Fig. 2 is the application ring of the NAND FLASH management methods that the present invention is applied to spaceborne data management
Border schematic diagram.The present invention is applied to the NAND FLASH management methods of spaceborne data management, it is adaptable to one or more data flow
Storage, playback.As shown in Fig. 2 in district management, realizing the data write to NAND FLASH, playback controls；
In FLASH management, the bad block management of the management to FLASH storage arrays, FLASH storage arrays is realized.
For convenience of description, in a preferred embodiment of the invention, from Samsung electronics, inc.s
The NAND FLASH chips of K9WBG08U1M models are explained to the NAND FLASH management methods suitable for spaceborne data management.
Refering to shown in Fig. 3, Fig. 3 is the preferred reality of the NAND FLASH management methods that the present invention is applied to spaceborne data management
Apply the pin scattergram of the NAND FLASH chips in example.As shown in figure 3, K9WBG08U1M chip capacity 32Gbits,
The integrated 2 FLASH memory element of K9WBG08U1M chip internals.Each FLASH memory element have independent CEn pins and
RBn pins (i.e. input pin and output pin), and ALE, CLE, REn, WEn, I/O0～I/O7 merges, its pin distribution is as schemed
Shown in 3.The capacity of each FLASH memory element is 16Gbits, each FLASH memory element each CEn pin of correspondence and
RBn pins, can be seen as independent a piece of FLASH chip.For each FLASH memory element (hereinafter referred to as DEVICE)
For, it is by 8192 physical block (hereinafter referred to as PB：Physical Block) composition, each PB by page 64 (hereinafter referred to as
PAGE) constitute.I.e. in K9WBG08U1M chips, 1DEVICE=8192PB, 1PB=64PAGE, 1PAGE=4KB.
Refering to shown in Fig. 4, Fig. 4 is the preferred reality of the NAND FLASH management methods that the present invention is applied to spaceborne data management
Apply the schematic diagram of the FLASH storage arrays in example.In engineer applied, the combination of multi-disc NAND FLASH chip can be improved into storage
Capacity, and improve data writing, reading, the efficiency of FLASH erasings.Therefore, for step S1：FLASH storage arrays are formed：
4 K9WBG08U1M chips are combined into one group of FLASH storage array according to mode as shown in Figure 4 by the present embodiment, operate certain
During a piece of K9WBG08U1M chips, need to enable corresponding CEn pins.
Refering to shown in Fig. 5, Fig. 5 is the preferred reality of the NAND FLASH management methods that the present invention is applied to spaceborne data management
Apply the addressing schematic diagram of the FLASH storage arrays in example.For step S2：FLASH storage array address administrations：The present embodiment pair
The addressing mode of PB be according to FLASH storage arrays addressing incremented by successively line by line, as shown in figure 5, per in a line from
Left-to-right addressing incremented by successively, is then incremented by again by column, using top line as the first row, using most left side string as first
Row, using the first row first row as starting point, i.e., first start from FLASH0 to start to FLASH7 from left to right with this from the first row
It is incremented by addressing, then starts from FLASH0 to FLASH7 from left to right with this incremental addressing from the second row again, so sequentially carry out
Addressing.In addition, (the letter below of a logical block will be combined into multiple physical blocks of a line in the FLASH storage arrays
Claim LB：Logic Block), i.e. 1LB=8PB, the addressing mode for LB are also addressing incremented by successively from the beginning to the end.For
The addressing of PAGE, and by the way of similar PB addressings.So, in the FLASH storage battle arrays of 4 K9WBG08U1M chips compositions
In row, the effective range of LB is [0,8191].Accordingly, there are following relation：
1LB=8PB；
LB=PB/8；
DEVICE=PB MOD 8.
Refering to described in Fig. 6, Fig. 6 is the preferred reality of the NAND FLASH management methods that the present invention is applied to spaceborne data management
Apply the FLASH storage arrays data write schematic diagram in example.For step S3：FLASH storage arrays data write：Number to be written
According to being initially stored in FIFO memory, when in FIFO memory, data volume writes a PAGE enough, log-on data write.
Data can greatly improve writing speed by the way of pile line operation, as shown in Figure 6.When data write conditions are reached,
Request for utilization is proposed to FLASH memory element first, after being responded, FLASH memory element is write data into.Writing address list
Position is PAGE, therefore has following conversion relation formula：
LB=writing address/512；
DEVIC=writing address MOD 8；
PB=LB*8+DEVICE.
For step S4：FLASH storage array data read-outs：Before reading data, propose to FLASH memory element first
Request for utilization, after being responded, data is read from FLASH memory element, is stored in FIFO memory.When enough group of data
When one number passes frame, group number passes frame and is sent to ground.It is PAGE to read address unit, the conversion relation having as writing address
Formula.
In addition, for FLASH storage array bad block managements：NAND FLASH are in use, it is possible to create bad block.Cause
This needs to record the bad block for producing.As data write operation is by the way of streamline write, it is impossible to enough to write
Check after entering to finish and write successfully/status of fail.
Therefore, in the present embodiment, before write data/erasing data every time, current FLASH storages are first read single
First state, judges whether last time write data/erasing data manipulation fails, if detecting last time write data/erasing data
The situation of operation failure, then the LB of labelling last time write data/erasing data manipulation is bad block.Bad block table is stored in described
The ad-hoc location of the distribution in FLASH memory element, used in being loaded into RAM in system electrification, when the bad block table occurs
During bad block marking operation, renewal is stored in the current bad block table in the FLASH memory element.
For data readback address of cache：For spaceborne data management system, it is often necessary to entered according to user's request
Row data readback.In addition to common sequential playback, the function of possessing on-demand playback is also required.Therefore, number guard system needs logarithm
Make playback mapping according to address.
Therefore, in the present embodiment, data are continuously stored in FLASH, without any data markers；And read in data
When going out, then need to pack the data to number biography frame, be issued to ground.When Frame is packaged into, it is used to deposit in data field front end
Put address information.The corresponding data of playback can be specified according to address information in ground.
The playback of data is with LB as least unit.As shown in figure 5,1LB=64*4096*8=2MB.Assume that a number passes frame
Valid data 886B can be accommodated, 2 byte address informations is removed, the valid data of 884B can be accommodated.But 1LB can not
Integer 884B Frames are accommodated, so, in the present embodiment, each LB only stores integral multiple 884B data, that is, store
2372 frames.Therefore, the space for having 304B is not used by by each LB.In whole number guard system, the space of waste is 304*
8192=2432KB, accounting 0.00724%, this can be what is stood.
By the method for such data readback address of cache, number can be allowed to pass frame data and LB direct correlation, and
It is required for any mapping table.Therefore, the LB numberings that 2 bytes storage current data is located before every number passes frame data domain, when
When needing to carry out data-on-demand playback, number guard system is according to No. LB all data down transmissions that will be stored in the LB.
It should be noted that through the above description of the embodiments, those skilled in the art can be understood that
Part or all of to the present invention can be realized by software and with reference to required general hardware platform.Based on such understanding,
Can be embodied in the form of software product the part that technical scheme is substantially contributed to prior art in other words
Out, the computer software product may include one or more machine readable medias for being stored thereon with machine-executable instruction,
These instructions can be caused when by one or more machines execution such as computer, computer network or other electronic equipments should
One or more machine embodiments in accordance with the present invention are performing operation.Machine readable media may include, but be not limited to, floppy disk,
CD, CD-ROM (compact-disc-read only memory), magneto-optic disk, ROM (read only memory), RAM (random access memory),
EPROM (Erasable Programmable Read Only Memory EPROM), EEPROM (Electrically Erasable Read Only Memory), magnetic or optical card, sudden strain of a muscle
Deposit, or be suitable to store machine-executable instruction other kinds of medium/machine readable media.
The present invention can be described in the general context of computer executable instructions, such as program
Module.Usually, program module includes execution particular task or realizes the routine of particular abstract data type, program, object, group
Part, data structure etc..The present invention is put into practice in a distributed computing environment can also, in these distributed computing environment, by
The remote processing devices connected by communication network are performing task.In a distributed computing environment, program module can be with
In local and remote computer-readable storage medium including including storage device.
It should be noted that it will be understood by those skilled in the art that above-mentioned members can be PLD,
Including：Programmable logic array (Programmable Array Logic, PAL), GAL (Generic Array
Logic, GAL), field programmable gate array (Field-Programmable Gate Array, FPGA), complex programmable patrol
One or more in device (Complex Programmable Logic Device, CPLD) is collected, the present invention is not done to this to be had
Body is limited.
Although the present invention is disclosed as above with preferred embodiment, which is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Technical spirit any simple modification, equivalent variations and modification that above example is made, belong to technical solution of the present invention
Protection domain.
Claims (10)
1. a kind of NAND FLASH management methods suitable for spaceborne data management, it is characterised in that include：
FLASH storage arrays are formed：Multiple NAND FLASH chips are combined to form FLASH storage arrays, NAND FLASH by
Multiple physical block compositions, each physical block are constituted by multiple FLASH pages；
FLASH storage array address administrations：By the property of all FLASH memory element of all NAND FLASH chips
Reason block is addressed jointly, and addressing mode is according to FLASH storage arrays addressing incremented by successively line by line；
FLASH storage arrays data write：When in the FIFO memory, data volume writes a page enough, log-on data is write
Enter, request for utilization is proposed to the FLASH memory element, after being responded, write data into the FLASH memory element；
FLASH storage array data read-outs：To the FLASH memory element propose request for utilization, after being responded, by data from
Read in the FLASH memory element, and be stored in buffering, when data organize a number enough passes frame, group number is passed into frame and is sent
To ground.
2. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
FLASH storage arrays are using distribution：Subregion is carried out to the FLASH memory element, and according to the memory capacity need of data
The size for determining allocation space is sought, and is patrolled one being combined into multiple physical blocks of a line in the FLASH storage arrays
Block is collected, the least unit of distribution is logical block.
3. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
FLASH storage arrays data are wiped：Erasing least unit is logical block, operates all FLASH chips simultaneously during erasing.
4. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
FLASH storage array bad block managements：Before write data every time, current FLASH state of memory cells is first read, is sentenced
Whether disconnected last time write data manipulation fails, and after wiping every time, reads all FLASH states, if detecting last time
The situation of write-in block/current erasure block operation failure, then labelling last time write-in block/current erasure block is bad block.
5. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 4, it is characterised in that described
FLASH memory element also includes for recording the bad block table of the bad block, the bad block table is stored in the FLASH storages single
The ad-hoc location of the distribution in unit, used in being loaded into RAM in system electrification, when the bad block table occurs bad block marking operation
When, renewal is stored in the current bad block table in the FLASH memory element.
6. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 4, it is characterised in that held
Before row writing, reading, erasing operation, next good block, when operation completes current block, the next one for getting first are obtained
Good block is used as subsequent operation block.
7. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
Data readback address of cache：Data are written into data when writing and are continuously stored in the FLASH memory element, do not add
Plus any data markers；Number is packed the data to during data read-out and passes frame, be issued to ground；The data of reading are being packaged into into number
During according to frame, data field front end is used for into storage address information, so that ground plays back corresponding data to specify according to address information.
8. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
Data write is write according to page, and data are read to be then that logically block reads, in order to ensure each logic block number
According to storage independence, data be written to the data volume of logical block meet integer number pass frame under pass.
9. the NAND FLASH management methods of spaceborne data management are applied to as claimed in claim 1, it is characterised in that also wrapped
Include：
For storage multiple types of data, FLASH is carried out subregion by system.The least unit of subregion is logical block.In addition, system
Distribute a number of logical block for storing system information and bad block table information.
10. a kind of NAND FLASH management systems suitable for spaceborne data management, it is characterised in that include：
Array combination unit, for combining to form FLASH storage arrays by multiple NAND FLASH chips；
Address administration unit, for by all physical blocks of all FLASH memory element of all NAND FLASH chips
Addressed jointly, addressing mode be according to FLASH storage arrays addressing incremented by successively line by line, and will be in described
A logical block is combined into multiple physical blocks of a line in FLASH storage arrays；
Data write unit, for when in the FIFO memory, data volume writes a page enough, log-on data writes, to
The FLASH memory element proposes request for utilization, after being responded, writes data into the FLASH memory element, data write
After full logical block, the next good block by checking bad block table acquisition is jumped to, the data volume for being written to logical block meets integer
Number is passed and is passed under frame；
Data read-out unit, for proposing request for utilization to the FLASH memory element, after being responded, by data from described
Read in FLASH memory element, and be stored in the FIFO memory, and when data are organized a number enough and pass frame, by a group number
Pass frame and be sent to ground, the Data Frontend write storage address information of reading specifies playback of data for ground；
Data wipe unit, for when data erasing is performed, logically all FLASHs of the block simultaneously to being related to are wiped
Remove；
Bad-block managing unit, by reading the modes such as write operation state, erase status, data read-out verification, if there is writing mistake
Lose, wipe failure, the situation of verification failure, then labelling place logical block is bad block, renewal bad block table is simultaneously stored, be write operation,
Read operation, erasing operation provide next good block, and bad block table is loaded into RAM during system electrification in case using.
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| CN109582239A (en) * | 2018-12-03 | 2019-04-05 | 郑州云海信息技术有限公司 | A kind of store method, device, equipment and the storage medium of SSD bad block table |
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