CN106493121A - A kind of nanometer cleaning method based on active liquid and laser - Google Patents

A kind of nanometer cleaning method based on active liquid and laser Download PDF

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Publication number
CN106493121A
CN106493121A CN201610937822.1A CN201610937822A CN106493121A CN 106493121 A CN106493121 A CN 106493121A CN 201610937822 A CN201610937822 A CN 201610937822A CN 106493121 A CN106493121 A CN 106493121A
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laser
liquid
granule
active liquid
impact
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CN106493121B (en
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刘胜
占必红
程佳瑞
郑怀
廖道坤
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Wuhan University WHU
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Wuhan University WHU
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser

Abstract

The invention discloses a kind of nanometer cleaning method based on active liquid and laser, the surface of the material of cleaning required for active liquid film is deposited on, by the interface of LASER HEATING liquid and granule and produce local heating and thermal response liquid, boiling or explosive chemical reaction are produced in a liquid, create higher pressure to clean granule, realize the purpose that granule is cleared material surface.The present invention is by application such as hydrogen peroxide (H2O2) active liquid, enhanced laser-impact is produced with higher pressure, the purpose of Rapid Cleaning body surface dirt particle is reached.The method cleaning dirt particle speed is fast, efficiency high.The application of the also expansible pulse laser technique of the method.

Description

A kind of nanometer cleaning method based on active liquid and laser
Technical field
The invention belongs to laser cleaning field, and in particular to a kind of nanometer based on high energy laser beam and active liquid is clear Washing method.
Background technology
Little particle is removed compared with seeming to be easier for removing bulky grain, but the reduction with size, gravity lose its Affect, now very strong molecular force starts to occupy an leading position.The granule for being smaller in size than one thousandth millimeter can be used more than which One millionfold power of weight is adhered on surface.
Current micro- cleaning systems are usually used liquid chemical, itself are polluter, and they may infringement treat The surface of cleaning material.As freon and its chemical relatives are just gradually being eliminated in the whole world, society and industry strive to find More preferable succedaneum.People both know about currently a popular known cleaning agent by ozone layer depletion and contribute to the product of greenhouse effect Raw.
There are a kind of new clean technologies to use high energy density laser beam and water as main component at present.In short, just It is by thin water film(Its thickness is in terms of nanometer to micron)It is deposited on the surface for needing cleaning.Moisture film is by the energy from laser beam Measure and explode, and dirt particle is raised from surface.May then pass through suction and remove the water with pollutant.The method is Be proved to be very effective, almost 100% unwanted granule is eliminated after repeating several times to process.But the method needs Repeatedly dust granule could be removed completely, speed religion is slow, be unsuitable for large-scale promotion use.
Content of the invention
In order to solve the defect existing for above-mentioned technical problem, the invention provides a kind of be based on high energy laser beam and work The nanometer cleaning method of property liquid hydrogen peroxide.
The technical solution adopted in the present invention is:A kind of nanometer cleaning method based on active liquid and laser, its feature It is:The surface of the material of cleaning required for active liquid film is deposited on, by the interface of LASER HEATING liquid and granule simultaneously Local heating and thermal response liquid is produced, boiling or explosive chemical reaction is produced in a liquid, the higher pressure of creation comes clear Clean granule, realizes the purpose that granule is cleared material surface.
Preferably, the active liquid is water or hydrogen peroxide.
The present invention is by application such as hydrogen peroxide (H2O2) active liquid, enhanced laser punching is produced with higher pressure Hit, reach the purpose of Rapid Cleaning body surface dirt particle.The method cleaning dirt particle speed is fast, efficiency high.The party The application of the also expansible pulse laser technique of method.
Description of the drawings
Schematic diagrams of the Fig. 1 for the embodiment of the present invention;Wherein:1 is laser beam;2 is hydrogen peroxide (H2O2);3 material tables Face;
Fig. 2 is in hydrogen peroxide (H in the embodiment of the present invention2O2) and water in laser impact intensified(LSP)AA6061's afterwards Case hardness(VHN)Comparison diagram with plastic deformation depth;Wherein:(a)Comparison diagram for case hardness;(b)For plastic deformation The comparison diagram of depth;
Fig. 3 is rapid chemical etching-false impulse laser ablation schematic diagram in the embodiment of the present invention;Wherein:(a)Ionization is shown It is intended to;(b)Plasma etching schematic diagram;
Fig. 4 is the mechanism figure of rapid chemical etching-false impulse laser ablation in the embodiment of the present invention.
Specific embodiment
Understand for the ease of those of ordinary skill in the art and implement the present invention, below in conjunction with the accompanying drawings and embodiment is to this Bright it is described in further detail, it will be appreciated that enforcement example described herein is merely to illustrate and explains the present invention, not For limiting the present invention.
A kind of nanometer cleaning side based on high energy laser beam and active liquid that the present invention is provided, using high-energy-density Laser beam 1 and active liquid (such as hydrogen peroxide H2O2) 2 as key component, thin active liquid film is deposited on institute The material surface 3 of cleaning is needed, when active liquid film is by the energy from laser beam 1, laser can heat liquid and granule Interface simultaneously produces local heating and thermal response liquid, produces boiling in a liquid(Such as water H2O)Or explosive chemical reaction(Example Such as hydrogen peroxide H2O2), producing much higher pressure to clean granule, dust granule will leave material surface 3.Carry pollutant Active liquid 1 by draw method be removed.
Application active liquid limits such as hydrogen peroxide (H2O2) 2 strengthening laser-impact.Which is derived from laser-impact and relies primarily on In the high density of laser induced plasma, which is determined by the ablating rate of the target material interacted by laser material.Cause This, is limited by using active liquid and can effectively strengthen laser-impact, caused by rapid chemical etching reaction due to more Effective ablation simultaneously occur in laser ablation process.Test result indicate that:By using hydrogen peroxide (H2O2)(Rather than Water H2O)As restriction by laser impact intensified(LSP)Aluminium alloy 6061 afterwards(AA6061)(As an example)Hardness and Plastic deformation depth is effectively increased.Application hydrogen peroxide (H2O2) 2, laser impact intensified(LSP)Efficiency improves 150%.Peroxidating Hydrogen (H2O2) enhanced laser-impact mainly mutually promote in laser ablation and chemical etching caused by higher ablation factor. Additionally, the experiment show by the pulse laser ablation (PLA) of zinc shows hydrogen peroxide (H2O2) 2 can dramatically increase and disappear Melt rate almost 300%.For laser impact intensified(LSP)AA6061 experiment, aluminium foil be used as absorb laser energy ablation Coating produces laser induced plasma, and for pulse laser ablation(PLA)Zinc, the zinc of top surface is straight by laser pulse Connect ablation.
Limit to strengthen laser-impact for being verified activity, the laser-impact of AA6061 is executed and hydrogen peroxide (H2O2) As constraint with aluminium foil as ablation device and compared with underwater laser impact.Using operation under 1064 nano wave lengths Surelite III series Q adjusts Nd-YAG laser instrument(One kind of neodymium-doped yttrium-aluminum garnet solid state laser)(Continuum Inc.), its pulse width(Full width at half maximum)For 5ns, for delivering laser pulse.After hammering, the microhardness of sample is led to Cross a Leco microhardness tester and measure in 25g loads and under the 10s retention times.The feature of the surface profile after process is led to Cross Wyko NT3300HD surface profilers from VeecoInc to characterize.
Measurement is by hydrogen peroxide (H2O2) and water limit laser-impact after case hardness and surface plastic deformation depth, And the pressure effect that comparative assessment is caused by enhanced laser-impact, because direct measurement laser-impact pressure relative difficulty.? Laser impact intensified(LSP)In technique, surface plasticity strain stress p, depending on the surge pressure of laser-impact, can use formula (1), wherein P is surge pressure, and HEL is Yu Gongniu elastic limits, σY dynIt is dynamic yield strength, λ and μ is according to Young's moduluss E and the Lame&1& constants of Poisson's ratio υ.The higher surface strain caused by enhanced laser-impact pressure brings and higher should be hardened Change effect, and cause bigger superficial hardness number.On the other hand, the plastic strain for being caused by laser-impact pressure is surface depth The decreasing function of degree.Plastic deformation occurs to be no longer than Yu Gongniu elastic limits in peak stress(HEL)Depth with ε p=0.Cause This, enhanced laser-impact pressure can be characterized as laser impact intensified(LSP)Case hardness afterwards and plastic deformation depth.
Fig. 2 is laser impact intensified under liquid(LSP)Experimental result, each data point be five times measurement meansigma methodss.See Observe in hydrogen peroxide (H2O2) under laser impact intensified(LSP)Cause than underwater laser shock peening(LSP)Bigger surface Hardness(Fig. 2(a)).For example, using identical laser intensity 8GW/cm2, by applying hydrogen peroxide (H2O2), hardness from 113VHN(Vickers hardness number)Increase to 123VHN.Consider AA6061 laser impact intensified(LSP)Front hardness is about 94VHN, hydrogen peroxide (H2O2) by underwater laser shock peening(LSP)Efficiency improve 153%.Even if moreover, it has been found that water The laser intensity of lower LSP is from 4GW/cm2Increase to 12GW/cm2, hardness only increases by 9% from 108VHN to 118VHN.This is because When laser intensity is more than 10GW/cm2When, produce the saturation for puncturing plasma and causing surge pressure.On the other hand, peroxide is used Change hydrogen (H2O2) replace water (H2O this major limitation) can be destroyed and improves hardness and be up to about 132VHN, this is close to by straining The saturation hardness number of the AA6061 that hardening causes.Meanwhile, hydrogen peroxide (H2O2) also bring relatively large areal deformation depth (Fig. 2(b)).For example, using identical laser intensity 10GW/cm2, hydrogen peroxide (H2O2) deforming depth is increased from 0.73l μm To 1.12l μm of increasing Fuda 153.4%.Additionally, for underwater laser shock peening(LSP)Observe identical laser-impact saturation Phenomenon, and think hydrogen peroxide (H2O2) this restriction is effectively destroyed by forming deeper surface pitting.Therefore, laser Shock peening(LSP)Case hardness and deforming depth afterwards shows, by applying hydrogen peroxide (H2O2) produce as restriction medium There is the enhanced laser-impact of bigger pressure, so as to improve cleaning efficiency.
The intensity of generally laser-impact is introduced and controlled by the expansion of laser induced plasma, and including density, pressure With the plasma parameter of temperature by ablation factor control.Therefore, the bigger ablation factor for being promoted by activity constraint is in this process Pivotal role is played, to strengthen the laser-impact with higher pressure.
In order to understand this process, it is proposed that rapid chemical etching-false impulse laser ablation(PLA), as shown in figure 3, The flow chart of this mechanism is as shown in Figure 4.Formula(a)-(e)The ionization occurred for during and chemical etching reaction, wherein hv Represent photon energy, Δ ETIt is the heat energy of etching reaction release.When the target of metal surface focal point is by anterior incident laser Pulse evaporation ionizing, produce a laser-induced plasma plume at goal constraint interface(Fig. 4(a)).This electricity From being main by trans- bremsstrahlung mechanism control(Equation(a)Fig. 4), with free electron e-Fast-growth relevant.Once produce Raw, due to the effect of restraint that liquid is limited, plasma is forced into thermodynamic state immediately.Meanwhile, plasma pressure Dramatically increase and by rear portion shunt excitation light energy being absorbed come inducing temperature, subsequently formed on surface and there is ultrasonic shock wave. The pressure of the verified laser induced plasma in the case where liquid is limited of many reports is at gigapascal (gigapascal) Level, temperature can reach thousand of Kelvins.This extreme environment is hydrogen peroxide (H2O2) decomposition reaction provide pole Big benefit, its discharge elemental oxygen O as a strong oxidizer chemical etching process(Equation in Fig. 4(b)).Notice here High temperature can substantially speed up chemolysis speed.As the report such as Hong, hydrogen peroxide in hot environment (H2O2) decomposition rate(It is higher than 103K)The order of magnitude 10 can be reached7cm3·mol-1·s-1.Additionally, it is contemplated that powerful liquid limit The impact of system, it is reasonable to illustrate that decomposition reaction occurs mainly in the atom of the plasma plume of surface region and most of release Oxygen is limited and is present in interface, such as Fig. 3(b)Shown.Additionally, the elemental oxygen of some releases can pass through, and absorption is later to swash Light energy is further ionized to form the oxygen O of ionization+There is even higher oxidisability, due to inverse bremsstrahlung process(In Fig. 4 Equation(c)).Therefore, rapid chemical product decomposition rate and little restricted volume may result in the tool of atom and ionized oxygen There is the plasma thin layer of strong oxidisability and high concentration, cause a rapid chemical etch process to remove more target materials (In Fig. 4(d)With(e)).
Mutually promote bigger ablation factor and enhanced plasma causes the further increase of ablation factor, sharp so as to change Light surge.Higher plasma pressure may result in higher ablation factor.More than discussion, with higher interior energy and pressure The enhancing plasma of power is expected to obtain, due to the fact that.First, chemical etching process can increase plasma Density and thickness cause plasma pressure to increase by removing more target materials.Gross pressure P of plasma is electronics point The sum of pressure Pe and particle fraction pressure Pp, such as shown in equation (2).Wherein kBIt is Boltzmann constant, neAnd npBe respectively electronics and The amount of granule.Therefore, electronics and grain density n are increased respectivelyeAnd np, plasma pressure can be strengthened by chemical etching reaction Power.Additionally, the model based on well-known Fabbro, time-evolution pressure P (t) of plasma and thickness L (t) such as equation (3), shown in, wherein Z1 and Z2 is target and the impact impedance for limiting medium.It theoretically prove plasma pressure with wait from Daughter thickness is proportional.The bigger plasma thickness of energy acquisition expection may cause deeper because of bigger ablation factor Depth of ablation.Second, the heat energy that plasma parameter further may be discharged by chemically etching process is affected (Fig. 4 Middle equation (d) and (e)).This heat energy will be applied in increase plasma internal heat energy and open liquid/target interface.Process phase Between the energy balance can be described by equation (4), wherein I, ETLaser intensity with α, by plasma absorption heat energy and Constant fraction.Equation (4) shows the increase energy Δ E of the heat of releaseT, higher plasma pressure can be caused.Therefore, Ablation factor and plasma pressure are mutually promoted and cause enhanced laser-impact.
P=Pe+Pp=kBTene+kBTpnp(2)
By application such as hydrogen peroxide (H2O2) active liquid limit, enhanced laser punching is produced with higher pressure Hit.Propose the mechanism of rapid chemical etching-auxiliary laser ablation.Induced by mutually promoting between ablation and etching process Larger ablation factor be considered as strengthen laser-impact key factor.Therefore, the method has been broken current due to puncturing The major limitation of the underwater pulse laser processing for causing, and effectively by underwater laser shock peening(LSP)Burn with pulse laser Erosion(PLA)Efficiency be respectively increased 150% and 300%.It is therefore contemplated that can be with by the enhanced laser-impact of active constraint The application of pulse laser technique is extended significantly, such as laser impact intensified(LSP), laser assisted micro Process and pulse swash Light ablation(PLA).
The reason for active liquid of the present invention can effectively strengthen laser-impact is more by rapid chemical etching reaction Caused is effectively etched in laser ablation process while occurring.It is compared with water H2O is compared as constraint, with hydrogen peroxide (H2O2) active liquid limit aluminium alloy 6061 laser-impact intensity(LSP)Efficiency improves 150%, and the pulse laser of zinc Ablation(PLA)Ablation factor increased 300%.The present invention have produce higher ablation factor and punching under same laser intensity The additional mechanism of pressure is hit, the purpose of quick, efficient, thoroughly cleaning is reached, has huge application potential.The invention is not restricted to water With hydrogen peroxide H2O2As long as laser can heat the interface of liquid and granule and produce local heating and thermal response liquid, in liquid Boiling or explosive chemical reaction, the pressure cleaning granule for making generation higher, then liquid and material will have more is produced in body Extensive combination.
It should be appreciated that the part that this specification is not elaborated belongs to prior art.
It should be appreciated that the above-mentioned description for preferred embodiment is more detailed, therefore can not be considered to this The restriction of invention patent protection scope, one of ordinary skill in the art are being weighed without departing from the present invention under the enlightenment of the present invention Under the protected ambit of profit requirement, replacement can also be made or deformed, be each fallen within protection scope of the present invention, this Bright scope is claimed should be defined by claims.

Claims (2)

1. a kind of nanometer cleaning method based on active liquid and laser, it is characterised in that:Needed for active liquid film is deposited on The surface of material to be cleared up, by the interface of LASER HEATING liquid and granule and produces local heating and thermal response liquid, Boiling or explosive chemical reaction is produced in liquid, creates higher pressure to clean granule, realize for granule clearing material table The purpose in face.
2. the nanometer cleaning method based on active liquid and laser according to claim 1, it is characterised in that:The activity Liquid is water or hydrogen peroxide.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107321720A (en) * 2017-08-22 2017-11-07 成都新柯力化工科技有限公司 A kind of high efficiency laser cleaning technique
CN108406090A (en) * 2018-02-05 2018-08-17 中国航发北京航空材料研究院 A kind of high-energy short-pulse laser processing of removal metal surface camouflage coating
CN108971141A (en) * 2018-06-29 2018-12-11 江苏大学 A kind of method and apparatus of small energy laser high-efficiency washing steel surface rusty scale
CN109226101A (en) * 2018-09-18 2019-01-18 江苏大学 A kind of laser cleaning method using the water-soluble coating containing energy
CN113058935A (en) * 2021-04-30 2021-07-02 浙江工业大学 Method for cleaning micro-nano particles by underwater double-beam pulse laser induced shock waves
CN113305106A (en) * 2021-06-03 2021-08-27 四川大学 Method for cleaning micro-nano particle pollutants by laser and application

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1665609A (en) * 2002-04-05 2005-09-07 波克股份有限公司 Fluid assisted cryogenic cleaning
CN1808286A (en) * 2004-10-19 2006-07-26 皮瑞克斯股份有限公司 Process, treatment fluid and apparatus for removing sticky material from basal body surface
CN103357621A (en) * 2013-07-12 2013-10-23 江苏大学 Method and device of cleaning microparticles on surface of metal workpiece with laser shock waves
CN205587339U (en) * 2016-01-29 2016-09-21 深圳市庆丰科技有限公司 Physics cleaning system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1665609A (en) * 2002-04-05 2005-09-07 波克股份有限公司 Fluid assisted cryogenic cleaning
CN1808286A (en) * 2004-10-19 2006-07-26 皮瑞克斯股份有限公司 Process, treatment fluid and apparatus for removing sticky material from basal body surface
CN103357621A (en) * 2013-07-12 2013-10-23 江苏大学 Method and device of cleaning microparticles on surface of metal workpiece with laser shock waves
CN205587339U (en) * 2016-01-29 2016-09-21 深圳市庆丰科技有限公司 Physics cleaning system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107321720A (en) * 2017-08-22 2017-11-07 成都新柯力化工科技有限公司 A kind of high efficiency laser cleaning technique
CN107321720B (en) * 2017-08-22 2019-08-09 上海神洁环保科技股份有限公司 A kind of high efficiency laser cleaning method
CN108406090A (en) * 2018-02-05 2018-08-17 中国航发北京航空材料研究院 A kind of high-energy short-pulse laser processing of removal metal surface camouflage coating
CN108406090B (en) * 2018-02-05 2019-12-27 中国航发北京航空材料研究院 High-energy short pulse laser processing method for removing stealth coating on metal surface
CN108971141A (en) * 2018-06-29 2018-12-11 江苏大学 A kind of method and apparatus of small energy laser high-efficiency washing steel surface rusty scale
CN108971141B (en) * 2018-06-29 2021-03-23 江苏大学 Method and device for efficiently cleaning rust layer on steel surface by using low-energy laser
CN109226101A (en) * 2018-09-18 2019-01-18 江苏大学 A kind of laser cleaning method using the water-soluble coating containing energy
CN113058935A (en) * 2021-04-30 2021-07-02 浙江工业大学 Method for cleaning micro-nano particles by underwater double-beam pulse laser induced shock waves
CN113305106A (en) * 2021-06-03 2021-08-27 四川大学 Method for cleaning micro-nano particle pollutants by laser and application
CN113305106B (en) * 2021-06-03 2022-08-02 四川大学 Method for cleaning micro-nano particle pollutants by laser and application

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