CN106488148A - 一种超分辨率图像传感器及其构造方法 - Google Patents
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- CN106488148A CN106488148A CN201610937050.1A CN201610937050A CN106488148A CN 106488148 A CN106488148 A CN 106488148A CN 201610937050 A CN201610937050 A CN 201610937050A CN 106488148 A CN106488148 A CN 106488148A
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
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- 238000003384 imaging method Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T3/00—Geometric image transformations in the plane of the image
- G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
- G06T3/4053—Scaling of whole images or parts thereof, e.g. expanding or contracting based on super-resolution, i.e. the output image resolution being higher than the sensor resolution
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T3/00—Geometric image transformations in the plane of the image
- G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
- G06T3/4053—Scaling of whole images or parts thereof, e.g. expanding or contracting based on super-resolution, i.e. the output image resolution being higher than the sensor resolution
- G06T3/4069—Scaling of whole images or parts thereof, e.g. expanding or contracting based on super-resolution, i.e. the output image resolution being higher than the sensor resolution by subpixel displacements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610937050.1A CN106488148B (zh) | 2016-11-01 | 2016-11-01 | 一种超分辨率图像传感器及其构造方法 |
PCT/CN2016/109662 WO2018082156A1 (zh) | 2016-11-01 | 2016-12-13 | 一种超分辨率图像传感器及其构造方法 |
US15/771,852 US11024010B2 (en) | 2016-11-01 | 2016-12-13 | Super-resolution image sensor and producing method thereof |
Applications Claiming Priority (1)
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CN201610937050.1A CN106488148B (zh) | 2016-11-01 | 2016-11-01 | 一种超分辨率图像传感器及其构造方法 |
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CN106488148A true CN106488148A (zh) | 2017-03-08 |
CN106488148B CN106488148B (zh) | 2019-09-17 |
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US (1) | US11024010B2 (zh) |
CN (1) | CN106488148B (zh) |
WO (1) | WO2018082156A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107025632A (zh) * | 2017-04-13 | 2017-08-08 | 首都师范大学 | 一种图像超分辨率重建方法及系统 |
CN109346492A (zh) * | 2018-10-11 | 2019-02-15 | 长春长光辰芯光电技术有限公司 | 线阵图像传感器像素阵列及物体表面缺陷检测方法 |
CN111182191A (zh) * | 2019-11-15 | 2020-05-19 | 北京超放信息技术有限公司 | 基于计算像差补偿的宽视场高分辨率摄像设备及方法 |
WO2021000569A1 (zh) * | 2019-07-01 | 2021-01-07 | 达科为(深圳)医疗设备有限公司 | 一种用于大面积显微成像的数字病理扫描仪 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106488148B (zh) * | 2016-11-01 | 2019-09-17 | 首都师范大学 | 一种超分辨率图像传感器及其构造方法 |
DE102017106831A1 (de) * | 2017-03-30 | 2018-10-04 | Sick Ag | Kamera und Verfahren zur Erfassung von relativ zu der Kamera in einer Förderrichtung bewegten Objekten |
CN111553840B (zh) * | 2020-04-10 | 2023-06-27 | 北京百度网讯科技有限公司 | 图像超分辨的模型训练和处理方法、装置、设备和介质 |
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CN107025632A (zh) * | 2017-04-13 | 2017-08-08 | 首都师范大学 | 一种图像超分辨率重建方法及系统 |
CN107025632B (zh) * | 2017-04-13 | 2020-06-30 | 首都师范大学 | 一种图像超分辨率重建方法及系统 |
CN109346492A (zh) * | 2018-10-11 | 2019-02-15 | 长春长光辰芯光电技术有限公司 | 线阵图像传感器像素阵列及物体表面缺陷检测方法 |
CN109346492B (zh) * | 2018-10-11 | 2020-07-28 | 长春长光辰芯光电技术有限公司 | 线阵图像传感器像素阵列及物体表面缺陷检测方法 |
WO2021000569A1 (zh) * | 2019-07-01 | 2021-01-07 | 达科为(深圳)医疗设备有限公司 | 一种用于大面积显微成像的数字病理扫描仪 |
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CN111182191A (zh) * | 2019-11-15 | 2020-05-19 | 北京超放信息技术有限公司 | 基于计算像差补偿的宽视场高分辨率摄像设备及方法 |
CN111182191B (zh) * | 2019-11-15 | 2021-08-20 | 浙江荷湖科技有限公司 | 基于计算像差补偿的宽视场高分辨率摄像设备及方法 |
Also Published As
Publication number | Publication date |
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CN106488148B (zh) | 2019-09-17 |
US20190311463A1 (en) | 2019-10-10 |
US11024010B2 (en) | 2021-06-01 |
WO2018082156A1 (zh) | 2018-05-11 |
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Inventor after: Meng Guanjia Inventor after: Zhou Chunping Inventor after: Gong Huili Inventor after: Li Xiaojuan Inventor after: Liu Yanbo Inventor after: Zhao Junbao Inventor after: Niu Ke Inventor after: Guo Jiao Inventor before: Zhou Chunping Inventor before: Gong Huili Inventor before: Li Xiaojuan Inventor before: Meng Guanjia Inventor before: Liu Yanbo Inventor before: Zhao Junbao Inventor before: Niu Ke Inventor before: Guo Jiao |
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