CN106483601B - A kind of polarization beam apparatus - Google Patents

A kind of polarization beam apparatus Download PDF

Info

Publication number
CN106483601B
CN106483601B CN201510526708.5A CN201510526708A CN106483601B CN 106483601 B CN106483601 B CN 106483601B CN 201510526708 A CN201510526708 A CN 201510526708A CN 106483601 B CN106483601 B CN 106483601B
Authority
CN
China
Prior art keywords
waveguide
straight
crossing
polarization beam
beam apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510526708.5A
Other languages
Chinese (zh)
Other versions
CN106483601A (en
Inventor
沈百林
方舟
张琦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing ZTE New Software Co Ltd
Original Assignee
Nanjing ZTE New Software Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing ZTE New Software Co Ltd filed Critical Nanjing ZTE New Software Co Ltd
Priority to CN201510526708.5A priority Critical patent/CN106483601B/en
Priority to PCT/CN2016/093610 priority patent/WO2017032214A1/en
Publication of CN106483601A publication Critical patent/CN106483601A/en
Application granted granted Critical
Publication of CN106483601B publication Critical patent/CN106483601B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/126Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/105Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type having optical polarisation effects

Abstract

The invention discloses a kind of polarization beam apparatus, including straight-through waveguide and crossing waveguide, there is interval and asymmetric between straight-through waveguide and crossing waveguide, the coupled waveguide of straight-through waveguide be the secondarily etched waveguide of fixed shape, and the coupled waveguide of crossing waveguide is progressive slab waveguide.Polarization beam apparatus disclosed by the invention, that there are difficulty of processing for solving the problems, such as the polarization beam apparatus of the prior art is big, needs complicated or even off-gauge processing step, process allowance small.

Description

A kind of polarization beam apparatus
Technical field
The present invention relates to optical communication field more particularly to a kind of polarization beam apparatus.
Background technique
Currently, Polarization Control plays very crucial effect, such as communication, bio-sensing, quantum in many application fields Optics.The Polarization Control device of high efficiency and small size has very important application value.Polarization beam apparatus in optic communication (polarization beam splitter, alternatively, polarization splitter and rotator) is a kind of integrated Opto-electronic device realizes the separation of transverse electric (TE) mould and horizontal magnetic (TM) mould, in silicon light related communication chip, also needs to realize TM Mould is converted to TE ' mould.
Currently, the implementation method of polarization beam apparatus is based primarily upon two-dimensional grating and waveguide two major classes, wherein based on waveguide Method can be divided into Evolution Modes (mode evolution) and Mode Coupling (mode coupling) again.It can based on Mode Coupling In a manner of using asymmetric waveguides, for example, in the prior art, leading directly to waveguide (waveguide A) and using slab waveguide, crossing waveguide (waveguide B) uses progressive secondarily etched waveguide.However, in the above scheme, carrying out width adjustment to secondarily etched waveguide Difficulty of processing is very big, and existing processing technology is difficult to realize the silicon waveguide that width is less than 100nm.As it can be seen that existing polarization beam apparatus That there are difficulty of processing is big for implementation, needs complicated or even off-gauge processing step, the problems such as process allowance is small.
Summary of the invention
In order to solve the above technical problem, the present invention provides a kind of polarization beam apparatus, in the prior art inclined for solving Vibration beam splitter has that difficulty of processing is big, needs complicated or even off-gauge processing step, process allowance small.
In order to reach above-mentioned technical purpose, the present invention provides a kind of polarization beam apparatus, comprising: straight-through waveguide and intersection wave It leads, the coupled waveguide of straight-through waveguide is the secondarily etched waveguide of fixed shape, and the coupled waveguide of crossing waveguide is progressive bar shaped Waveguide leads directly between waveguide and crossing waveguide and there is interval and asymmetric.
Further, transverse electric (TE) mould signal is inputted from the input waveguide of straight-through waveguide, from the output waveguide of straight-through waveguide Output;Horizontal magnetic (TM) mould signal is inputted from the input waveguide of straight-through waveguide, and mode is converted to transverse electric (TE ') in coupled waveguide Mould, and exported from the output waveguide of crossing waveguide.
Further, the coupled waveguide of waveguide is led directly to as by the L-type waveguide of secondarily etched realization.
Further, the width of the coupled waveguide of crossing waveguide becomes larger along optical propagation direction.
Further, the effective refractive index of the TE mould of straight-through waveguide is greater than the effective refractive index of the TE mould of crossing waveguide;Directly The effective refractive index of the TM mould of logical waveguide is equal to the effective refractive index of the TE mould of crossing waveguide.
Further, above-mentioned polarization beam apparatus further include: the covering being covered on straight-through waveguide and crossing waveguide and position Buried layer below straight-through waveguide and crossing waveguide, the Refractive Index of Material for leading directly to waveguide and crossing waveguide are greater than covering and buried layer Refractive Index of Material.
Further, the material of waveguide and crossing waveguide is led directly to as silicon, and the material of covering and buried layer is silica.
Further, the width for leading directly to waveguide is greater than the width of crossing waveguide.
Further, the width for leading directly to waveguide is 550nm, and the non-etched portions width for leading directly to waveguide is 400nm, leads directly to wave The height for the highest part led is 220nm, and the height of etched portions is 150nm, and the width of crossing waveguide is gradually increased from 250nm To 300nm, the height of crossing waveguide is 220nm.
Further, 200nm is divided between leading directly between waveguide and crossing waveguide.
Further, the length for leading directly to the coupled waveguide of waveguide and crossing waveguide is more than or equal to 100 μm.
In the present invention, polarization beam apparatus includes straight-through waveguide and crossing waveguide, is deposited between straight-through waveguide and crossing waveguide At interval and asymmetric, the coupled waveguide of straight-through waveguide be the secondarily etched waveguide of fixation shape, the coupled waveguide of crossing waveguide For progressive slab waveguide.Compared with prior art, the processing is simple for polarization beam apparatus provided by the invention, solves the prior art Polarization beam apparatus there is a problem of that difficulty of processing is big, and realize complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor) silicon light technology compatibility, without complicated or even off-gauge technique Step, the progressive structure of crossing waveguide allow processing technology tolerance big, reached device size is small, coupling efficiency is high, loss is small, The small effect of crosstalk.Moreover, in embodiments of the present invention, device minimum dimension parameter is not more than under existing silicon light processing technology Minimum feature size.
Detailed description of the invention
Fig. 1 is the schematic diagram of polarization beam apparatus provided in an embodiment of the present invention;
Fig. 2 is the top view of the asymmetric coupled waveguide of polarization beam apparatus provided in an embodiment of the present invention;
Fig. 3 is the sectional view of the asymmetric coupled waveguide of polarization beam apparatus provided in an embodiment of the present invention;
Fig. 4 is electric field intensity map when polarization beam apparatus provided in an embodiment of the present invention inputs TE mould;
Fig. 5 is electric field intensity map when polarization beam apparatus provided in an embodiment of the present invention inputs TM mould;
Fig. 6 is the relational graph for inputting the insertion loss and coupling length of TE signal;
Fig. 7 is the relational graph for inputting the polarization conversion loss and coupling length of TM signal;
Fig. 8 is the crosstalk for inputting TE signal and the relational graph of coupling length;
Fig. 9 is the crosstalk for inputting TM signal and the relational graph of coupling length;
Figure 10 be waveguide B effective refractive index with waveguide B width WB variation diagram;
The effective refractive index that Figure 11 is waveguide A is with the variation diagram of width WAe;
Figure 12 is variation diagram of the twin-guide mode mixture situation with the width WB of waveguide B.
Specific embodiment
The embodiment of the present invention is described in detail below in conjunction with attached drawing, it should be understood that embodiments described below Only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
The embodiment of the present invention provides a kind of polarization beam apparatus, including straight-through waveguide and crossing waveguide, leads directly to waveguide and intersects There is interval and asymmetric between waveguide, the coupled waveguide of straight-through waveguide be the secondarily etched waveguide of fixation shape, crossing waveguide Coupled waveguide be progressive slab waveguide.
Wherein, transverse electric (TE) mould signal is inputted from the input waveguide of straight-through waveguide, is exported from the output waveguide of straight-through waveguide; Horizontal magnetic (TM) mould signal is inputted from the input waveguide of straight-through waveguide, and mode is converted to transverse electric (TE ') mould in coupled waveguide, and from The output waveguide of crossing waveguide exports.
Wherein, the coupled waveguide of waveguide is led directly to as by the L-type waveguide of secondarily etched realization.The coupled waveguide of crossing waveguide Width become larger along optical propagation direction, this progressive structure makes device have good technique mismachining tolerance tolerance.
Wherein, the effective refractive index of the TE mould of straight-through waveguide is greater than the effective refractive index of the TE mould of crossing waveguide, thus real The TE mould for now leading directly to waveguide is not coupled to crossing waveguide;The effective refractive index of the TM mould of straight-through waveguide is equal to the TE of crossing waveguide The effective refractive index of mould, to realize the TM mode coupling of straight-through waveguide to crossing waveguide.
Wherein, the width for leading directly to waveguide is greater than the width of crossing waveguide.The height of straight-through waveguide and crossing waveguide is using existing There is the common height of processing technology.The Design of length of straight-through waveguide and crossing waveguide is device loss in expected range.
In addition, polarization beam apparatus further includes the covering being covered on straight-through waveguide and crossing waveguide and is located at straight-through waveguide With the buried layer below crossing waveguide.Wherein, the Refractive Index of Material of straight-through waveguide and crossing waveguide is greater than the material of covering and buried layer Refractive index.The material of covering and buried layer can be identical.For example, the material of straight-through waveguide and crossing waveguide is silicon, covering and buried layer Material be silica.
Fig. 1 is the schematic diagram of polarization beam apparatus provided in an embodiment of the present invention.As shown in Figure 1, the embodiment of the present invention provides The polarization beam apparatus waveguide that includes be divided into three parts: input waveguide, coupled waveguide and output waveguide.The waveguide is by leading directly to wave Lead (waveguide A) and crossing waveguide (waveguide B) composition.Wherein, TE mould signal is inputted from the input waveguide of waveguide A, from the defeated of waveguide A Waveguide exports out;TM mould is inputted from the input waveguide of waveguide A, and mode is converted to TE ' mould in coupled waveguide, from the defeated of waveguide B Waveguide exports out.Wherein, input waveguide and output waveguide can be reduced using common technique realization, such as curved waveguide structure Mode Coupling.Therefore it is repeated no more in this.
Fig. 2 is the top view of the asymmetric coupled waveguide of polarization beam apparatus provided in an embodiment of the present invention.Fig. 3 is the present invention The sectional view of the asymmetric coupled waveguide for the polarization beam apparatus that embodiment provides.
As shown in Fig. 2, waveguide is made of, wave asymmetrical waveguide A (Waveguide A) and waveguide B (Waveguide B) It leads between covering and buried layer, the Refractive Index of Material of waveguide is greater than the Refractive Index of Material of covering and buried layer, wherein covering and bury Layer material can be identical.Specifically, waveguide material uses silicon in silicon optical device, covering and buried layer material use titanium dioxide Silicon.
The effective refractive index of TE mould of the effective refractive index of the TE mould of waveguide A greater than waveguide B, to realize the TE of waveguide A Mould is not coupled to waveguide B;The effective refractive index of TE mould of the effective refractive index approximation of the TM mould of waveguide A equal to waveguide B, thus Realize the TM mode coupling of waveguide A to waveguide B.
Referring to Fig. 2 and Fig. 3, parameter and meaning to the coupled waveguide part of waveguide A and waveguide B are carried out specifically It is bright.
The coupled waveguide of waveguide A is the secondarily etched waveguide of fixed shape (such as L-type), and the width of waveguide A is WA, such as The dash area of the non-etched portions width WAe=400nm of 550nm, waveguide A, waveguide A are secondarily etched part, etched portions Height He=150nm, that is, use shallow lithographic technique.The coupled waveguide of waveguide A is identical as the length of the coupled waveguide of waveguide B (LDC as shown in Figure 2).It is, in general, that the width of waveguide A is greater than the width of waveguide B.The coupled waveguide of waveguide B is gradual change The width of slab waveguide, waveguide B is slowly increased to WB2 (such as 300nm) from WB1 (such as 250nm), i.e., the width of slab waveguide along Optical propagation direction (direction D as shown in Figure 2) becomes larger, this progressive structure makes device have good technique mismachining tolerance appearance Degree of bearing.In this way, compared to the prior art, the processing of waveguide A and waveguide B in the present embodiment are relatively easy, it is able to solve existing The big problem of the polarization beam apparatus difficulty of processing of technology.
GAP is divided between waveguide A and waveguide B, the minimum interval for generally taking silicon light processing technology to allow, such as representative value is 200nm.The height of the highest part of waveguide A and waveguide B is H, according to existing silicon light technology standard, generally takes 220nm.It needs It is noted that device parameters provided in this embodiment are only the representative value of principle of specification, when being related to concrete technology realization, can be used Other reasonable values, but need to meet device working principle, it is matched with the effective refractive index of waveguide A and waveguide B to realize that TE mould is straight Logical and TM mode coupling.To sum up, the present embodiment realizes CMOS silicon light technology compatibility, without complicated or even off-gauge technique Step allows processing technology tolerance big by progressive structure, moreover, realizing device minimum dimension parameter no more than existing silicon light Minimum feature size under processing technology.
Fig. 4 is electric field intensity map when polarization beam apparatus provided in an embodiment of the present invention inputs TE mould;Fig. 5 is the embodiment of the present invention The polarization beam apparatus of offer inputs electric field intensity map when TM mould.Such as Fig. 4 and Fig. 5 as it can be seen that TE mould signal is directly straight-through from waveguide A (straight) it exports, TM mould signal is coupled to waveguide B from waveguide A and intersects (cross) output, realizes the expection of polarization beam splitting Function.
Fig. 6 is the relational graph for inputting the insertion loss (IL) and coupling length (Coupling Length) of TE signal;Fig. 7 To input the relational graph that (PCL) and coupling length is lost in the polarization conversion of TM signal;Fig. 8 be input TE signal crosstalk (XT) with The relational graph of coupling length;Fig. 9 is the relational graph for inputting crosstalk (XT) and coupling length of TM signal.It can according to Fig. 6 to Fig. 9 See, coupling length at least needs 100 μm, wherein to guarantee design margin, can use 200 μm.As it can be seen that the present embodiment passes through design Suitable coupling length can achieve the effect that coupling efficiency is high, loss is small, crosstalk is small.
Figure 10 be waveguide B effective refractive index with waveguide B width WB variation diagram, wherein ordinate Neff is indicated Imitate refractive index;The effective refractive index that Figure 11 is waveguide A is with the variation diagram of width WAe, wherein the width WA=550nm of waveguide A; Figure 12 be waveguide A and waveguide B mode mixture state with waveguide B width WB variation diagram, wherein ordinate TE PF indicate The polarization ratios of TE mould.It can be recognized from fig. 12 that mode mixture has reached Ex when the width WB of waveguide B is near 270nm: Ey=50:50, that is to say, that mode conversion efficiency highest at this time.
In conclusion polarization beam apparatus provided in an embodiment of the present invention is compared with prior art, the processing is simple, realizes CMOS silicon light technology is compatible, allows processing technology tolerance big by progressive structure, realizes device minimum dimension parameter and be not more than Minimum feature size under existing silicon light processing technology, has reached that device size is small, coupling efficiency is high, loss is small, crosstalk is small Effect.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The present invention is not by upper The limitation of embodiment is stated, the above embodiments and description only illustrate the principle of the present invention, is not departing from the present invention Under the premise of spirit and scope, various changes and improvements may be made to the invention, these changes and improvements both fall within claimed In the scope of the invention.

Claims (11)

1. a kind of polarization beam apparatus characterized by comprising
Straight-through waveguide, the coupled waveguide of the straight-through waveguide are the secondarily etched waveguide of fixed shape;
Crossing waveguide, the coupled waveguide of the crossing waveguide are progressive slab waveguide;
Between the straight-through waveguide and the crossing waveguide exist interval and it is asymmetric;Effective folding of the TM mould of the straight-through waveguide Penetrate effective refractive index of the rate equal to the TE mould of the crossing waveguide.
2. polarization beam apparatus as described in claim 1, which is characterized in that input of the transverse electric TE mould signal from the straight-through waveguide Waveguide input, exports from the output waveguide of the straight-through waveguide;The input waveguide of horizontal magnetic TM mould signal from the straight-through waveguide is defeated Enter, mode is converted to transverse electric TE ' mould in coupled waveguide, and exports from the output waveguide of the crossing waveguide.
3. polarization beam apparatus as described in claim 1, which is characterized in that the coupled waveguide of the straight-through waveguide is by secondary Etch the L-type waveguide realized.
4. polarization beam apparatus as described in claim 1, which is characterized in that the width of the coupled waveguide of the crossing waveguide along Optical propagation direction becomes larger.
5. polarization beam apparatus as described in claim 1, which is characterized in that the effective refractive index of the TE mould of the straight-through waveguide is big In the effective refractive index of the TE mould of the crossing waveguide.
6. polarization beam apparatus as described in claim 1, which is characterized in that further include: it is covered on the straight-through waveguide and intersection Covering in waveguide and the buried layer below the straight-through waveguide and crossing waveguide, the straight-through waveguide and crossing waveguide Refractive Index of Material is greater than the Refractive Index of Material of the covering and buried layer.
7. polarization beam apparatus as claimed in claim 6, which is characterized in that the material of the straight-through waveguide and crossing waveguide is The material of silicon, the covering and buried layer is silica.
8. polarization beam apparatus as described in claim 1, which is characterized in that the width of the straight-through waveguide is greater than the intersection wave The width led.
9. polarization beam apparatus as described in claim 1, which is characterized in that the width of the straight-through waveguide is 550nm, described straight The non-etched portions width of logical waveguide is 400nm, and the height of the highest part of the straight-through waveguide is 220nm, etched portions Height is 150nm, and the width of the crossing waveguide progressively increases to 300nm from 250nm, and the height of the crossing waveguide is 220nm。
10. polarization beam apparatus as described in claim 1, which is characterized in that between the straight-through waveguide and the crossing waveguide Between be divided into 200nm.
11. polarization beam apparatus as described in claim 1, which is characterized in that the coupled wave of the straight-through waveguide and crossing waveguide The length led is more than or equal to 100 μm.
CN201510526708.5A 2015-08-25 2015-08-25 A kind of polarization beam apparatus Active CN106483601B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201510526708.5A CN106483601B (en) 2015-08-25 2015-08-25 A kind of polarization beam apparatus
PCT/CN2016/093610 WO2017032214A1 (en) 2015-08-25 2016-08-05 Polarization beam splitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510526708.5A CN106483601B (en) 2015-08-25 2015-08-25 A kind of polarization beam apparatus

Publications (2)

Publication Number Publication Date
CN106483601A CN106483601A (en) 2017-03-08
CN106483601B true CN106483601B (en) 2019-10-01

Family

ID=58099464

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510526708.5A Active CN106483601B (en) 2015-08-25 2015-08-25 A kind of polarization beam apparatus

Country Status (2)

Country Link
CN (1) CN106483601B (en)
WO (1) WO2017032214A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10684416B2 (en) * 2017-07-27 2020-06-16 Ii-Vi Delaware Inc. Fabrication-tolerant and broadband polarization splitter and rotator
CN107561646B (en) * 2017-10-18 2020-05-05 西安奇芯光电科技有限公司 Optical waveguide polarization splitter and method of manufacturing the same
CN108563030B (en) * 2018-01-31 2023-05-26 中国地质大学(武汉) Polarization beam splitter
CN111983753B (en) * 2020-07-24 2022-09-02 中国科学院上海微系统与信息技术研究所 Interlayer polarization beam splitter applied to 3D optical interconnection
CN112711093B (en) * 2021-03-26 2021-07-20 西安奇芯光电科技有限公司 Polarization beam splitter structure and polarization beam splitting method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103336330A (en) * 2013-07-05 2013-10-02 中国科学院半导体研究所 Polarization rotator based on asymmetric vertical slot waveguide
CN104849803A (en) * 2014-02-17 2015-08-19 株式会社藤仓 Substrate-type waveguide element and optical modulator

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7373042B2 (en) * 2006-07-28 2008-05-13 Infinera Corporation Polarization sorter
FR2922031B1 (en) * 2007-10-03 2011-07-29 Commissariat Energie Atomique OPTICAL DEVICE WITH SUPERPOSED PHOTONIC CIRCUITS FOR COUPLING WITH ONE OR MORE OPTICAL GUIDES.
CN103091782B (en) * 2013-01-23 2014-07-23 浙江大学 Array waveguide grating module with polarization control
KR101550502B1 (en) * 2013-11-13 2015-09-04 인하대학교 산학협력단 Integratable planar waveguide-type optical isolator and circulator with polarization-mode control
JP6194789B2 (en) * 2013-12-24 2017-09-13 沖電気工業株式会社 Optical waveguide device
CN104090375B (en) * 2014-07-30 2016-09-14 华为技术有限公司 Optically isolated device and optically isolated method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103336330A (en) * 2013-07-05 2013-10-02 中国科学院半导体研究所 Polarization rotator based on asymmetric vertical slot waveguide
CN104849803A (en) * 2014-02-17 2015-08-19 株式会社藤仓 Substrate-type waveguide element and optical modulator

Also Published As

Publication number Publication date
WO2017032214A1 (en) 2017-03-02
CN106483601A (en) 2017-03-08

Similar Documents

Publication Publication Date Title
CN106483601B (en) A kind of polarization beam apparatus
CN105334575B (en) A kind of silicon substrate beam splitter and its manufacturing method
US7088890B2 (en) Dual “cheese wedge” silicon taper waveguide
CN106164723B (en) Edge coupling using adiabatic tapered waveguides
US7469084B2 (en) Structure comprising an adiabatic coupler for adiabatic coupling of light between two optical waveguides and method for manufacturing such a structure
CN106104335A (en) Polarization Rotary Loop
US20020118916A1 (en) Mode transformer between low index difference waveguide and high index difference waveguide
CN107111064B (en) Horizontally coupled to silicon waveguides
US9939582B2 (en) Layer having a non-linear taper and method of fabrication
US8718432B1 (en) Method for forming a spotsize converter
CN112327411B (en) Silicon-based polarization beam splitting rotator based on adiabatic conical asymmetric coupling and Y-branch
Zhu et al. High coupling efficiency silicon waveguide to metal–insulator–metal waveguide mode converter
WO2004092782A2 (en) Mode transformation and loss reduction in silicon waveguide structures utilizing tapered transition regions
CN107533197A (en) A kind of polarization rotator and optical signal processing method
CN106094107A (en) A kind of polarization beam apparatus
CN105980896A (en) Low loss optical crossing
CN102944911A (en) Optical waveguide and manufacture methods thereof
CN107092056A (en) A kind of Wavelength division multiplexer/demultiplexer and preparation method thereof
CN105759351B (en) A kind of silicon substrate groove waveguides polarizer based on vertical coupled principle
US10962721B2 (en) Adiabatic optical coupler for direct SOI to interposer coupling
CN106468810A (en) A kind of spot size converter and Optical devices
Zhou et al. In-plane resonant excitation of quantum dots in a dual-mode photonic-crystal waveguide with high β-factor
US20020131747A1 (en) Integrated optical device
CN102636841A (en) Micro-ring assistant ring mirror structure
CN206848508U (en) Directional coupled TM based on sub-wave length grating is polarized beam splitter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20190828

Address after: Yuhuatai District of Nanjing City, Jiangsu province 210012 Bauhinia Road No. 68

Applicant after: Nanjing Zhongxing New Software Co., Ltd.

Address before: 518057 Nanshan District Guangdong high tech Industrial Park, South Road, science and technology, ZTE building, Ministry of Justice

Applicant before: ZTE Corporation

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant