CN106483600B - A kind of ultrashort vertical waveguide coupler with tolerance of producing extensively - Google Patents

A kind of ultrashort vertical waveguide coupler with tolerance of producing extensively Download PDF

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CN106483600B
CN106483600B CN201611056211.2A CN201611056211A CN106483600B CN 106483600 B CN106483600 B CN 106483600B CN 201611056211 A CN201611056211 A CN 201611056211A CN 106483600 B CN106483600 B CN 106483600B
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CN106483600A (en
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陆巧银
刘灿
赵龚媛
国伟华
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Huazhong University of Science and Technology
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths

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Abstract

本发明公开了一种具有大制作容差的超短垂直波导耦合器。该耦合器垂直方向上由上波导、间隔层和下波导构成。在传播方向上,垂直耦合器分为输入区域、耦合区域以及输出区域。在耦合区域,上波导的宽度逐渐变小,分成前段、中段和后段;前段和后段为上波导宽度快速收缩段,中段为模式转移段。本发明通过减小上下波导之间的间隔层的厚度来增大耦合系数,从而缩短耦合器的长度;在耦合区域的中段,设置合适的上波导宽度递减速率以及合适的长度,使上波导的宽度因为实际制作精度的局限产生偏差时,上波导的模式仍然能向下波导高效转移,从而实现大的制作容差。

The invention discloses an ultra-short vertical waveguide coupler with large fabrication tolerance. The coupler is composed of an upper waveguide, a spacer layer and a lower waveguide in the vertical direction. In the direction of propagation, a vertical coupler is divided into an input area, a coupling area, and an output area. In the coupling region, the width of the upper waveguide gradually decreases, and is divided into front, middle and back sections; the front and back sections are the fast shrinking sections of the upper waveguide width, and the middle section is the mode transfer section. The present invention increases the coupling coefficient by reducing the thickness of the spacer layer between the upper and lower waveguides, thereby shortening the length of the coupler; in the middle section of the coupling area, a suitable deceleration rate and a suitable length of the upper waveguide width are set to make the upper waveguide When the width deviates due to the limitation of actual manufacturing precision, the mode of the upper waveguide can still be efficiently transferred to the lower waveguide, thereby achieving a large manufacturing tolerance.

Description

一种具有大制作容差的超短垂直波导耦合器An Ultrashort Vertical Waveguide Coupler with Large Fabrication Tolerance

技术领域technical field

本发明涉及一种光学元器件,尤其涉及一种垂直波导耦合器。The invention relates to an optical component, in particular to a vertical waveguide coupler.

背景技术Background technique

随着光通信系统向更高速率更新换代,越来越多的光学器件集成到集成光路(photonic integrated circuits,PIC)上实现各种不同功能的单片集成。为了使光通信器件向尺寸更小、功耗更低、稳定性更可靠的方向发展,有源和无源器件的集成将是必不可少的。目前,光子集成技术主要有:Butt-joint再生长技术、偏置量子阱技术、量子阱混杂技术等。这些集成技术相对复杂的制作工艺导致其制作成本比较高、成品率低,另外,由于有源和无源器件结构不能分别设计,这样就局限了集成器件的性能。Suematsu等人提出的双波导垂直耦合技术,主要利用上波导由上至下向下波导垂直耦合来实现有源和无源器件的集成(Y.Suematsu,M.Yamada,and K.Kayashi.Integrated twin-guide AlGaAs laser withmultiheterosctructure[J].IEEE J.Quantum Electron.,1975,11(7):457-460.)。该技术中,可以由下至上生长不同波导层,避免了复杂的再生长工艺,极大的简化了制作工艺,同时由于上下波导可相对独立设计,因此具有更大的灵活性。As optical communication systems are upgraded to higher speeds, more and more optical devices are integrated into photonic integrated circuits (PICs) to achieve monolithic integration of various functions. In order to make optical communication devices develop in the direction of smaller size, lower power consumption, and more reliable stability, the integration of active and passive devices will be essential. At present, photonic integration technologies mainly include: Butt-joint regrowth technology, offset quantum well technology, quantum well hybrid technology, etc. The relatively complex manufacturing process of these integrated technologies leads to relatively high manufacturing costs and low yields. In addition, since the structures of active and passive devices cannot be designed separately, the performance of integrated devices is limited. The dual-waveguide vertical coupling technology proposed by Suematsu et al. mainly utilizes the vertical coupling of the upper waveguide from top to bottom to realize the integration of active and passive devices (Y.Suematsu, M.Yamada, and K.Kayashi.Integrated twin -guide AlGaAs laser with multiheterostructure[J].IEEE J.Quantum Electron.,1975,11(7):457-460.). In this technology, different waveguide layers can be grown from bottom to top, which avoids complex re-growth process and greatly simplifies the manufacturing process. At the same time, because the upper and lower waveguides can be designed relatively independently, it has greater flexibility.

垂直耦合技术具有制作工艺简单的优点,可以很好地适用于集成光路中器件的集成。根据超模耦合理论,目前实现垂直耦合的方案主要有共振耦合器(resonant couplers)(XiankaiSun,Hsi-Chun Liu,and AmnonYariv,Adiabaticity criterion and theshortest adiabaticmode transformer in a coupled-waveguide system,Opt.Lett.,2009,34(3):280–282.)和绝热耦合器(adiabatic couplers)。在共振耦合器中,能量平均分布在对称模和反对称模中,利用这两个本征模式的相互干涉来实现上下波导耦合(M.Galarza,K.De Mesel,R.Baets,A.Martinez,C.Aramburu,and M.Lopez-Amo,Compactspot-size converters with fiber-matched antiresonant reflecting opticalwaveguide,Appl.Opt.,2003,42:4841-4846.)。在起始段,功率集中在上波导。在沿着波导的纵向传播方向上,两个模式相互干涉,当两个模式相位差为π时,模式在上波导中相干相消,在下波导中相干加强,功率集中在下波导;而当两个模式相位差为2π时,模式在下波导中相干相消,在上波导中相干加强,功率又回到上波导。这样在传播方向上,光功率呈现周期性行为,在半个周期由上波导耦合到下波导,在一个周期再由下波导耦合回上波导。共振耦合器的耦合长度取决于上下波导之间的耦合系数,耦合系数越大,耦合长度越短(A.Wieczorek,B.Roycroft,F.H.Peters,and B.Corbett,Loss analysis and increasingof the fabrication tolerance of resonant coupling by tapering the modebeating section,Opt.Quantum Electron.,2011,42(8):521–529.)。共振耦合器中,由于模式的干涉导致的周期性的耦合使得耦合效率强烈依赖于耦合器的长度和结构,实际制作中由于制作精度以及工艺偏差导致的上波导宽度的改变对耦合效率的影响很大,这样共振耦合器的制作容差通常很小。对于绝热耦合器,能量主要集中在对称模中,随着下波导的光限制因子变大,光功率慢慢由上波导耦合到下波导(F.Xia,V.M.Menon,and S.R.Forrest,Photonic integration using asymmetric twin-waveguide(ATG)technology:partIconcepts and theory[J].IEEE J.Sel.Top.Quantum Electron.,2005,11(1):17–29.)。由于绝热耦合器的上波导的宽度变化很平缓,这就降低了耦合效率对耦合器长度的依赖性,其制作容差相对较大。但是绝热耦合器通常需要足够长(~200μm)的耦合区来保证上波导模式最终耦合到下波导中,减少模式转变为其他高阶模式所引入的损耗。这种耦合器不仅减少了集成器件的密度,而且会增加耦合器的插入损耗,很大程度上限制了其实际应用。总之,目前的垂直耦合器存在制作容差小或者长度过长的问题,导致集成器件的成品率低、制作成本高,使得其无法得到大范围的应用。The vertical coupling technology has the advantage of simple manufacturing process, and can be well applied to the integration of devices in the integrated optical circuit. According to the supermode coupling theory, the current vertical coupling schemes mainly include resonant couplers (XiankaiSun, Hsi-Chun Liu, and AmnonYariv, Adiabaticity criterion and the shortest adiabaticmode transformer in a coupled-waveguide system, Opt. Lett., 2009, 34(3):280–282.) and adiabatic couplers. In the resonant coupler, the energy is evenly distributed in the symmetric mode and the antisymmetric mode, and the mutual interference of these two eigenmodes is used to realize the upper and lower waveguide coupling (M.Galarza, K.De Mesel, R.Baets, A.Martinez , C. Aramburu, and M. Lopez-Amo, Compactspot-size converters with fiber-matched antiresonant reflecting optical waveguide, Appl. Opt., 2003, 42:4841-4846.). In the initial section, the power is concentrated in the upper waveguide. In the longitudinal propagation direction along the waveguide, the two modes interfere with each other. When the phase difference between the two modes is π, the modes are coherent and cancel in the upper waveguide, and the coherence is strengthened in the lower waveguide, and the power is concentrated in the lower waveguide; and when the two modes When the phase difference of the modes is 2π, the modes are coherent and cancelled in the lower waveguide, and the coherence is strengthened in the upper waveguide, and the power returns to the upper waveguide. In this way, in the propagation direction, the optical power exhibits a periodic behavior, which is coupled from the upper waveguide to the lower waveguide in half a period, and then coupled back to the upper waveguide from the lower waveguide in one period. The coupling length of the resonant coupler depends on the coupling coefficient between the upper and lower waveguides. The larger the coupling coefficient, the shorter the coupling length (A.Wieczorek, B.Roycroft, F.H.Peters, and B.Corbett, Loss analysis and increasing of the fabrication tolerance of resonant coupling by tapering the modebeating section, Opt. Quantum Electron., 2011, 42(8):521–529.). In the resonant coupler, the coupling efficiency is strongly dependent on the length and structure of the coupler due to the periodic coupling caused by the interference of the mode. In actual production, the change of the upper waveguide width due to the manufacturing accuracy and process deviation has a great influence on the coupling efficiency. Large, the manufacturing tolerances of such resonant couplers are usually small. For the adiabatic coupler, the energy is mainly concentrated in the symmetric mode. As the optical confinement factor of the lower waveguide becomes larger, the optical power is slowly coupled from the upper waveguide to the lower waveguide (F.Xia, V.M.Menon, and S.R.Forrest, Photonic integration using asymmetric twin-waveguide (ATG) technology: partIconcepts and theory [J]. IEEE J. Sel. Top. Quantum Electron., 2005, 11(1): 17–29.). Since the width of the upper waveguide of the adiabatic coupler changes very gently, this reduces the dependence of the coupling efficiency on the coupler length, and its manufacturing tolerance is relatively large. However, the adiabatic coupler usually requires a sufficiently long (~200 μm) coupling region to ensure that the upper waveguide mode is finally coupled into the lower waveguide, reducing the loss caused by the mode transition to other higher-order modes. This kind of coupler not only reduces the density of integrated devices, but also increases the insertion loss of the coupler, which greatly limits its practical application. In short, the current vertical coupler has the problem of small manufacturing tolerance or too long length, resulting in low yield of integrated devices and high manufacturing cost, making it unable to be widely used.

发明内容Contents of the invention

本发明所要解决的技术问题是提出一种新的具有大制作容差的超短垂直耦合器,用于减小光集成器件的尺寸,提高光集成器件的制作容差,进而提高光集成器件的成品率。The technical problem to be solved by the present invention is to propose a new ultra-short vertical coupler with a large manufacturing tolerance, which is used to reduce the size of the optical integrated device, improve the manufacturing tolerance of the optical integrated device, and then improve the optical integrated device. Yield.

为了解决上述技术问题,本发明提出了一种新的具有大制作容差的超短垂直波导耦合器,所述超短垂直波导耦合器的垂直截面上,从上到下分别为上波导、间隔层和下波导。In order to solve the above technical problems, the present invention proposes a new ultra-short vertical waveguide coupler with a large manufacturing tolerance. On the vertical section of the ultra-short vertical waveguide coupler, from top to bottom are the upper waveguide, the space layer and lower waveguide.

在传播方向上,所述超短垂直耦合器分为输入区域、耦合区域及输出区域;在所述输入区域,上波导的模式传播常数β1大于下波导的模式传播常数β2,上下波导的模式传播常数差的一半、即δβ,δβ大于两波导间的耦合系数κ,即δβ>κ,δβ=(β12)/2,上波导模式不受下波导存在的影响;在所述耦合区域,随着所述上波导的宽度逐渐变小,分成顺序衔接的三段:前段、中段和后段;前段和后段为上波导宽度快速收缩段,中段为模式转移段;In the direction of propagation, the ultrashort vertical coupler is divided into an input area, a coupling area and an output area; in the input area, the mode propagation constant β 1 of the upper waveguide is greater than the mode propagation constant β 2 of the lower waveguide, and the mode propagation constant β 2 of the upper and lower waveguides Half of the mode propagation constant difference, that is, δβ, δβ is greater than the coupling coefficient κ between the two waveguides, that is, δβ>κ, δβ=(β 12 )/2, the upper waveguide mode is not affected by the existence of the lower waveguide; The coupling region, as the width of the upper waveguide gradually decreases, is divided into three sequentially connected sections: the front section, the middle section and the back section; the front section and the back section are the fast shrinking sections of the upper waveguide width, and the middle section is the mode transfer section;

通过减小上下波导之间的间隔层的厚度增加两波导间的耦合系数κ,从而减小耦合长度,耦合系数增加的上限为输入区上下波导间能实现的最大传播常数差的一半δβ。By reducing the thickness of the spacer layer between the upper and lower waveguides, the coupling coefficient κ between the two waveguides is increased, thereby reducing the coupling length. The upper limit of the coupling coefficient increase is half of the maximum propagation constant difference δβ that can be realized between the upper and lower waveguides in the input area.

进一步的,在耦合区域的中段,上波导宽度逐步减小,使上波导模式传播常数从略大于下波导减小至略小于下波导的模式传播常数;上波导的宽度逐步减小满足以下公式:Further, in the middle of the coupling region, the width of the upper waveguide gradually decreases, so that the mode propagation constant of the upper waveguide decreases from slightly larger than that of the lower waveguide to slightly smaller than the mode propagation constant of the lower waveguide; the width of the upper waveguide gradually decreases to satisfy the following formula:

β1(A)=β2+Δββ 1 (A) = β 2 + Δβ

β1(β)=β2-Δββ 1 (β)=β 2 -Δβ

上式中,β1(A)为耦合区域中段的上波导起始宽度所对应的模式传播常数,β1(B)为上波导的末端宽度所对应的模式传播常数,Δβ为上波导的最大制作容差所带来的上波导模式传播常数的偏移量;耦合区域的中段即模式转移段的长度为Lc的1.5~4倍,Lc定义为直波导耦合长度。In the above formula, β 1 (A) is the mode propagation constant corresponding to the initial width of the upper waveguide in the middle section of the coupling region, β 1 (B) is the mode propagation constant corresponding to the end width of the upper waveguide, and Δβ is the maximum The offset of the upper waveguide mode propagation constant brought by the manufacturing tolerance; the middle section of the coupling region, that is, the length of the mode transfer section is 1.5 to 4 times of L c , and L c is defined as the straight waveguide coupling length.

优选的,在耦合区域的前段,上波导的宽度快速减小,其末端宽度与耦合区域中段的起始宽度相同。耦合区域前段的上波导的宽度快速减小,可减短耦合器的长度。Preferably, in the front section of the coupling area, the width of the upper waveguide decreases rapidly, and its end width is the same as the initial width of the middle section of the coupling area. The width of the upper waveguide in the front section of the coupling area is rapidly reduced, which can shorten the length of the coupler.

同样优选的,在耦合区域的后段,上波导宽度快速减小,后段的起始宽度与中段的末端宽度相同,后段的末端宽度为制作允许的最小宽度,后段的末端为终止端,终止端面上镀有抗反射膜,以减小反射。同样,耦合区域后段的上波导的宽度快速减小,可减短耦合器的长度。Also preferably, in the rear section of the coupling region, the width of the upper waveguide decreases rapidly, the initial width of the rear section is the same as the end width of the middle section, the end width of the rear section is the minimum width allowed by the production, and the end of the rear section is the termination end , Anti-reflective coating is coated on the terminal end face to reduce reflection. Likewise, the width of the upper waveguide in the rear section of the coupling region decreases rapidly, which can shorten the length of the coupler.

在耦合区域的中段,上波导模式通过共振转移的方式快速向下波导转移。In the middle of the coupling region, the upper waveguide modes are rapidly transferred down the waveguide by means of resonance transfer.

在耦合区域的中段,当上波导宽度因为制作精度的局限出现偏差时,上波导模式仍然能在中段的不同位置高效向下波导转移。In the middle section of the coupling region, when the width of the upper waveguide deviates due to the limitation of manufacturing precision, the upper waveguide mode can still be efficiently transferred to the lower waveguide at different positions in the middle section.

在输出区域只有下波导。In the output region there is only the lower waveguide.

本发明通过减小上下波导之间的间隔层的厚度来增大耦合系数,从而缩短耦合器的长度;同时在耦合区域的中段通过采用合适的宽度递减速率以及合适的长度,实现如下效果:即当耦合区域中段的上波导宽度在一定范围内变化时,上波导的模式能在中段不同位置高效向下波导转移,这样当波导的宽度因为实际制作精度的局限产生偏差时,上波导的模式仍然能向下波导高效转移,从而实现大的制作容差。The present invention increases the coupling coefficient by reducing the thickness of the spacer layer between the upper and lower waveguides, thereby shortening the length of the coupler; at the same time, by adopting a suitable width deceleration rate and a suitable length in the middle of the coupling region, the following effects are achieved: namely When the width of the upper waveguide in the middle section of the coupling region changes within a certain range, the mode of the upper waveguide can be efficiently transferred to the lower waveguide at different positions in the middle section, so that when the width of the waveguide deviates due to the limitation of the actual manufacturing accuracy, the mode of the upper waveguide remains the same. Efficient transfer down the waveguide enables large fabrication tolerances.

附图说明Description of drawings

下面结合附图和具体实施方式对本发明的技术方案作进一步具体说明。The technical solutions of the present invention will be further specifically described below in conjunction with the accompanying drawings and specific embodiments.

图1为本发明的具有大制作容差的超短垂直波导耦合器的结构示意图。FIG. 1 is a schematic structural diagram of an ultra-short vertical waveguide coupler with a large manufacturing tolerance according to the present invention.

图2为本发明实例的横截面折射率分布示意图。Fig. 2 is a schematic diagram of a cross-sectional refractive index distribution of an example of the present invention.

图3为模式转移段7的上波导采用直波导的俯视结构图。FIG. 3 is a top structural view of the upper waveguide of the mode transfer section 7 using a straight waveguide.

图4为模式转移段7的上波导采用直波导时的上下两个波导功率转换仿真示意图。FIG. 4 is a schematic diagram of the power conversion simulation of the upper and lower waveguides when the upper waveguide of the mode transfer section 7 adopts a straight waveguide.

图5为模式转移段7的上波导采用不同斜率的宽度递减波导时,下波导的耦合效率随传播距离L的变化曲线图。FIG. 5 is a graph showing the variation of the coupling efficiency of the lower waveguide with the propagation distance L when the upper waveguide of the mode transfer section 7 adopts width-decreasing waveguides with different slopes.

图6为模式转移段7的上波导采用一定斜率的宽度递减波导时本发明耦合器的俯视结构图。FIG. 6 is a top view structure diagram of the coupler of the present invention when the upper waveguide of the mode transfer section 7 adopts a width-decreasing waveguide with a certain slope.

图7为模式转移段7的上波导采用直波导和本发明(一定斜率的宽度递减波导)时本发明耦合器的耦合效率随上波导宽度变化的容差示意图。FIG. 7 is a schematic diagram showing the tolerance of the coupling efficiency of the coupler of the present invention as the upper waveguide varies with the upper waveguide width when the upper waveguide of the mode transfer section 7 adopts a straight waveguide and the present invention (a width-decreasing waveguide with a certain slope).

图8为本发明实例的一个耦合效率极值时的仿真结果示意图,此时模式转移段7的上波导宽度变化为Δw1FIG. 8 is a schematic diagram of a simulation result of an example of the present invention when the coupling efficiency is at an extreme value. At this time, the upper waveguide width of the mode transfer section 7 changes by Δw 1 .

图9为本发明实例的另一个耦合效率极值时的仿真结果示意图,此时模式转移段7的上波导宽度变化为Δw2FIG. 9 is a schematic diagram of simulation results of another example of the present invention when the coupling efficiency is at an extreme value. At this time, the upper waveguide width of the mode transfer section 7 changes by Δw 2 .

具体实施方式Detailed ways

如图1所示,本发明的具有大制作容差超短垂直波导耦合器的光波导结构侧视图,横向从上到下依次由覆盖层1、上波导层2、间隔层3,下波导层4和衬底5构成,所述间隔层3作为上波导层2与下波导层4之间的一层低折射率层,上下波导构成垂直方向的耦合器使光从上波导层逐渐耦合到下波导层。在传播方向上,分为输入区域9,耦合区域(6、7、8),输出区域10。As shown in Figure 1, the side view of the optical waveguide structure of the ultra-short vertical waveguide coupler with a large manufacturing tolerance of the present invention, the lateral direction consists of a cover layer 1, an upper waveguide layer 2, a spacer layer 3, and a lower waveguide layer from top to bottom. 4 and substrate 5, the spacer layer 3 serves as a low-refractive index layer between the upper waveguide layer 2 and the lower waveguide layer 4, and the upper and lower waveguides constitute a vertical coupler to gradually couple light from the upper waveguide layer to the lower waveguide layer. waveguide layer. In the direction of propagation, it is divided into an input region 9 , a coupling region ( 6 , 7 , 8 ), and an output region 10 .

在输入区域,上波导的模式传播常数β1大于下波导的模式传播常数β2,上下波导的模式传播常数差的一半δβ=(R12)/2大于两波导间的耦合系数κ,即δβ>κ,上波导模式不受下波导存在的影响;在耦合区域,随着上波导宽度逐渐变小,可以分成三个区域,分别是,前段快速收缩段6:快速减小上波导的宽度,减小模式传播常数,使其接近下波导的模式传播常数;中段模式转移段7:使上波导宽度逐渐减小,上波导模式传播常数从略大于下波导减小至略小于下波导的模式传播常数,上波导模式通过共振转移的方式向下波导快速转移;后段快速收缩段8:再次快速减小上波导的宽度至上波导模式截止,抑制下波导中的光耦合回上波导。输出区域只有下波导。通过减小上下波导之间的间隔层的厚度增加两波导间的耦合系数κ,从而减小耦合长度,耦合系数增加的上限为输入区上下波导间能实现的最大传播常数差的一半δβ。In the input region, the mode propagation constant β 1 of the upper waveguide is greater than the mode propagation constant β 2 of the lower waveguide, half of the difference between the mode propagation constants of the upper and lower waveguides δβ=(R 12 )/2 is greater than the coupling coefficient κ between the two waveguides , that is, δβ>κ, the upper waveguide mode is not affected by the existence of the lower waveguide; in the coupling region, as the width of the upper waveguide gradually decreases, it can be divided into three regions, namely, the front section of the rapid contraction section 6: the rapid reduction of the upper waveguide The width of the waveguide reduces the mode propagation constant to make it close to the mode propagation constant of the lower waveguide; the middle mode transfer section 7: gradually reduces the width of the upper waveguide, and the mode propagation constant of the upper waveguide decreases from slightly larger than that of the lower waveguide to slightly smaller than that of the lower waveguide The mode propagation constant of the upper waveguide mode is quickly transferred to the lower waveguide through resonance transfer; the rear fast shrinkage section 8: quickly reduce the width of the upper waveguide again to the cut-off of the upper waveguide mode, and suppress the light in the lower waveguide from coupling back to the upper waveguide. The output area has only the lower waveguide. By reducing the thickness of the spacer layer between the upper and lower waveguides, the coupling coefficient κ between the two waveguides is increased, thereby reducing the coupling length. The upper limit of the coupling coefficient increase is half of the maximum propagation constant difference δβ that can be realized between the upper and lower waveguides in the input area.

上波导中段7的宽度逐步减小满足以下公式:The width of the middle section 7 of the upper waveguide gradually decreases to satisfy the following formula:

β1(A)=β2+Δββ 1 (A) = β 2 + Δβ

β1(B)=β2-Δββ 1 (B)=β 2 -Δβ

上式中,β1(A)为耦合区域中段的上波导起始宽度所对应的模式传播常数,β1(B)为上波导的末端宽度所对应的模式传播常数,Δβ为上波导的最大制作容差所带来的上波导模式传播常数的偏移量;耦合区域的中段即模式转移段的长度为Lc的1.5~4倍,Lc定义为直波导耦合长度。In the above formula, β 1 (A) is the mode propagation constant corresponding to the initial width of the upper waveguide in the middle section of the coupling region, β 1 (B) is the mode propagation constant corresponding to the end width of the upper waveguide, and Δβ is the maximum The offset of the upper waveguide mode propagation constant brought by the manufacturing tolerance; the middle section of the coupling region, that is, the length of the mode transfer section is 1.5 to 4 times of L c , and L c is defined as the straight waveguide coupling length.

本实施例中的具有大制作容差超短垂直波导耦合器,其工作波长为1.30μm,不同波导层的折射率以及结构参数由下表给出。The ultra-short vertical waveguide coupler with large manufacturing tolerance in this embodiment has an operating wavelength of 1.30 μm, and the refractive index and structural parameters of different waveguide layers are given in the following table.

表1垂直耦合器各波导层的折射率以及结构参数Table 1 Refractive index and structural parameters of each waveguide layer of the vertical coupler

对应波导层Corresponding waveguide layer 折射率Refractive index 厚度thickness 覆盖层1Overlay 1 3.20443.2044 2μm2μm 上波导层2Upper waveguide layer 2 3.34483.3448 0.498μm0.498μm 间隔层3Spacer 3 3.20443.2044 dd 下波导层4Lower waveguide layer 4 3.30483.3048 0.4μm0.4μm 衬底层5Substrate layer 5 3.20443.2044 2μm2μm

图2所示为本发明实例的横截面的折射率分布图。对于上波导宽度不变(即直波导)的垂直耦合器,其俯视结构图如图3所示。由耦合波理论,在传播方向上,上下波导归一化的功率分布为:Fig. 2 is a graph showing the refractive index profile of the cross-section of the example of the present invention. For a vertical coupler with a constant upper waveguide width (that is, a straight waveguide), its top view structure is shown in Figure 3. According to the coupled wave theory, in the propagation direction, the normalized power distribution of the upper and lower waveguides is:

其中2θ=arctan(κ/δβ),κ为耦合系数,δβ为传播过程中上下波导模式传播常数β1、β2的差的一半(β12)/2。可见,δβ越小,上下波导功率转移效率越高;如果要求功率转移到下波导模式中的效率大于90%,则有:δβ/κ<1/3,即上下波导的传播常数差的一半必须满足δβ<κ/3。当δβ=0,即相位完全匹配时,上下波导实现功率的完全转移,此时上波导的宽度,即匹配宽度wm,如图中所示,耦合长度Lc为:Where 2θ=arctan(κ/δβ), κ is the coupling coefficient, and δβ is half of the difference between the propagation constants β 1 and β 2 of the upper and lower waveguide modes during propagation (β 12 )/2. It can be seen that the smaller the δβ, the higher the power transfer efficiency of the upper and lower waveguides; if the efficiency of power transfer to the lower waveguide mode is required to be greater than 90%, then: δβ/κ<1/3, that is, half of the difference between the propagation constants of the upper and lower waveguides must be Satisfy δβ<κ/3. When δβ=0, that is, when the phases are completely matched, the upper and lower waveguides realize the complete transfer of power. At this time, the width of the upper waveguide, that is, the matching width w m , as shown in the figure, the coupling length L c is:

可见耦合长度取决于上下两波导之间的耦合系数,耦合系数越大,耦合长度越短。而耦合系数取决于上下两个波导模式的重叠程度,间隔层越薄,两波导模式的重叠越大,耦合系数也越大。因此,要想获得小的耦合长度,两波导之间的间隔层就需要薄。这里为了增大耦合系数减小垂直耦合器的长度,上下波导之间的间隔层厚度d取为0.3μm。图4为上波导为匹配宽度时,上下两个波导功率转换的仿真结果示意图。可以看到,在传播方向上光功率呈现周期性来回耦合行为。It can be seen that the coupling length depends on the coupling coefficient between the upper and lower waveguides, the greater the coupling coefficient, the shorter the coupling length. The coupling coefficient depends on the degree of overlap between the upper and lower waveguide modes. The thinner the spacer layer, the greater the overlap between the two waveguide modes and the greater the coupling coefficient. Therefore, to obtain a small coupling length, the spacer layer between the two waveguides needs to be thin. Here, in order to increase the coupling coefficient and reduce the length of the vertical coupler, the thickness d of the spacer layer between the upper and lower waveguides is taken as 0.3 μm. Fig. 4 is a schematic diagram of the simulation results of power conversion between the upper and lower waveguides when the upper waveguide has a matching width. It can be seen that the optical power exhibits a periodic back-and-forth coupling behavior in the propagation direction.

考虑到实际制作的过程中,由于制作精度和工艺重复性的影响,上波导宽度往往偏离理想的匹配宽度,所以模式转移段通常采用宽度递减的波导结构。图5所示为模式转移段7中上波导功率向下波导耦合的效率随传播长度的变化关系,图中给出了上波导为不同斜率宽度递减波导以及直波导情况下的耦合效率曲线。可以看出,采用宽度递减的上波导结构可以破坏直波导情况下功率的周期性来回耦合,使回向耦合的峰值变小,从而使耦合器对结构的变化敏感度降低;在一定斜率下,可以实现回向耦合的完全抑制,并且,在一定斜率下上波导宽度在相对大的范围内变化时都能达到匹配宽度wm,使多个功率高效转移点包含在内,从而增大了制作容差;当斜率增大时,通常需更长的耦合长度来增大了耦合器的容差,这样也会增加耦合器的传输损耗。因此,在增大耦合器的容差的同时还要考虑相对较短的耦合器长度,以便提高集成度以及减小传输损耗。Considering that in the actual manufacturing process, due to the influence of manufacturing accuracy and process repeatability, the upper waveguide width often deviates from the ideal matching width, so the mode transfer section usually adopts a waveguide structure with decreasing width. Figure 5 shows the relationship between the coupling efficiency of the upper waveguide power and the lower waveguide in the mode transfer section 7 as a function of the propagation length. The figure shows the coupling efficiency curves when the upper waveguide is a waveguide with different slope widths and a straight waveguide. It can be seen that the use of an upper waveguide structure with decreasing width can destroy the periodic back-and-forth coupling of power in the case of a straight waveguide, making the peak value of the back coupling smaller, thereby reducing the sensitivity of the coupler to structural changes; under a certain slope, The complete suppression of back coupling can be achieved, and the matching width w m can be achieved when the upper waveguide width changes in a relatively large range under a certain slope, so that multiple power efficient transfer points are included, thereby increasing the fabrication Tolerance; when the slope increases, usually a longer coupling length is required to increase the tolerance of the coupler, which will also increase the transmission loss of the coupler. Therefore, while increasing the tolerance of the coupler, a relatively short coupler length should also be considered in order to improve integration and reduce transmission loss.

图6所示为模式转移段7采用一定斜率的宽度递减的上波导时本发明耦合器的俯视结构图。图中包含了耦合器的前后段两段上波导宽度的快速收缩段。这里,耦合器中段即模式匹配段的长度为直波导耦合长度Lc的2~4倍。这样在模式转移段上波导的宽度同向增大或减小时,均有波导宽度能达到匹配宽度wm。具体地,在宽度变化Δw1、Δw2情况下,模式匹配宽度wm能在前后两个位置存在,对应光功率均达到最佳耦合条件,使耦合极值可以发生在这两个不同宽度情况下,这样增大了模式转移段上波导宽度的容差。在现有光刻精度条件下,这种具有大制作容差的垂直波导耦合器会显著提高集成器件的成品率。FIG. 6 is a top view structure diagram of the coupler of the present invention when the mode transfer section 7 adopts an upper waveguide with a certain slope and decreasing width. The figure includes the fast shrinking section of the waveguide width on the front and rear sections of the coupler. Here, the length of the middle section of the coupler, that is, the mode matching section, is 2 to 4 times the coupling length L c of the straight waveguide. In this way, when the width of the waveguide on the mode transfer section increases or decreases in the same direction, the width of the waveguide can reach the matching width w m . Specifically, in the case of width changes Δw 1 and Δw 2 , the mode matching width w m can exist in two positions before and after, and the corresponding optical power can reach the optimal coupling condition, so that the coupling extreme value can occur in the two different width cases Next, this increases the tolerance of the waveguide width on the mode shifting section. Under the condition of existing lithographic precision, this vertical waveguide coupler with large manufacturing tolerance will significantly improve the yield of integrated devices.

为验证本发明的制作容差性,采用BeamPROP软件对本发明的超短垂直波导耦合器的进行了模拟仿真,模拟中耦合器的前段和后段两个上波导宽度快速收缩段的长度分别设定为6μm和5μm。通过分析模式转移段7的上波导采用直波导和渐变波导结构情况下的耦合效率发现:对于图3所示的直波导结构,在传播方向上表现出功率的上下耦合周期性的行为,计算的耦合长度约为20μm,仿真的耦合效率随上波导宽度变化如图7虚线所示,可以看出耦合效率曲线只有一个极大值,其90%耦合效率时上波导宽度容差大约为-0.06μm<Δw<0.075μm;对于图4所示的渐变波导结构,当中段模式转移段长度约40μm时,仿真的耦合效率随上波导宽度变化如图7实线所示,不同于直波导,渐变波导的耦合效率出现两个极大值,其90%耦合效率时上波导宽度容差大约为-0.2μm<Δw<0.19μm,是直波导下容差的3倍左右。In order to verify the manufacturing tolerance of the present invention, the ultra-short vertical waveguide coupler of the present invention is simulated by using BeamPROP software. In the simulation, the lengths of the two upper waveguide width rapid contraction sections of the front section and the rear section of the coupler are respectively set 6μm and 5μm. By analyzing the coupling efficiency when the upper waveguide of the mode transfer section 7 adopts a straight waveguide and a tapered waveguide structure, it is found that: for the straight waveguide structure shown in Fig. The coupling length is about 20 μm. The simulated coupling efficiency varies with the width of the upper waveguide as shown in the dotted line in Figure 7. It can be seen that the coupling efficiency curve has only one maximum value, and the upper waveguide width tolerance is about -0.06 μm when the coupling efficiency is 90%. <Δw<0.075μm; for the graded waveguide structure shown in Figure 4, when the length of the middle mode transfer section is about 40μm, the simulated coupling efficiency varies with the width of the upper waveguide as shown in the solid line in Figure 7, which is different from the straight waveguide and the graded waveguide There are two maxima in the coupling efficiency, and the upper waveguide width tolerance is about -0.2μm<Δw<0.19μm when the coupling efficiency is 90%, which is about 3 times the lower tolerance of the straight waveguide.

图8和图9所示为耦合器在模式转移段的上波导宽度变化分别为Δw1和Δw2时对应的两个极值耦合效率的仿真结果图,其中,左图代表垂直耦合器内部光场分布沿传播方向的变化,右图则为归一化光功率的变化图。右图中,黑色和灰色曲线分别代表上波导功率和下波导功率随着传播长度变化。从图8中可以看出在z=30μm左右的位置,下波导功率显著上升,光功率发生快速转移。在垂直耦合器的末端,下波导功率达到最大,耦合效率约为97%。同理,图9中光功率耦合主要发生在z=42μm左右的位置,耦合效率约为96%,与图8最大耦合位置一前一后相对应。。Figures 8 and 9 show the simulation results of two extreme coupling efficiencies of the coupler when the upper waveguide width changes in the mode transfer section are Δw 1 and Δw 2 , respectively, where the left figure represents the vertical coupler internal light The change of the field distribution along the propagation direction, and the right figure is the change diagram of the normalized optical power. On the right, the black and gray curves represent the upper and lower waveguide power as a function of propagation length, respectively. It can be seen from Fig. 8 that at the position of z=30 μm or so, the power of the lower waveguide increases significantly, and the optical power transfers rapidly. At the end of the vertical coupler, the down-waveguide power reaches its maximum and the coupling efficiency is about 97%. Similarly, in FIG. 9 , the optical power coupling mainly occurs at a position around z=42 μm, and the coupling efficiency is about 96%, corresponding to the maximum coupling positions in FIG. 8 one after the other. .

最后所应说明的是,以上具体实施方式仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention and not limit them. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that the present invention can be Modifications or equivalent replacements of the technical solutions without departing from the spirit and scope of the technical solutions of the present invention shall fall within the scope of the claims of the present invention.

Claims (6)

1.一种具有大制作容差的超短垂直波导耦合器,其特征在于,所述超短垂直波导耦合器从上到下的垂直截面上,分别为上波导、间隔层和下波导;1. An ultrashort vertical waveguide coupler with a large manufacturing tolerance, characterized in that, on the vertical section from top to bottom of the ultrashort vertical waveguide coupler, there are respectively an upper waveguide, a spacer layer and a lower waveguide; 在传播方向上,所述超短垂直耦合器分为输入区域、耦合区域及输出区域;在所述输入区域,上波导的模式传播常数β1大于下波导的模式传播常数β2,上下波导的模式传播常数差的一半、即δβ,δβ大于两波导间的耦合系数κ,即δβ>κ,δβ=(β12)/2,上波导模式不受下波导存在的影响;在所述耦合区域,随着所述上波导的宽度逐渐变小,分成顺序衔接的三段:前段、中段和后段;前段和后段为上波导宽度快速收缩段,中段为模式转移段;In the direction of propagation, the ultrashort vertical coupler is divided into an input area, a coupling area and an output area; in the input area, the mode propagation constant β 1 of the upper waveguide is greater than the mode propagation constant β 2 of the lower waveguide, and the mode propagation constant β 2 of the upper and lower waveguides Half of the mode propagation constant difference, that is, δβ, δβ is greater than the coupling coefficient κ between the two waveguides, that is, δβ>κ, δβ=(β 12 )/2, the upper waveguide mode is not affected by the existence of the lower waveguide; The coupling region, as the width of the upper waveguide gradually decreases, is divided into three sequentially connected sections: the front section, the middle section and the back section; the front section and the back section are the fast shrinking sections of the upper waveguide width, and the middle section is the mode transfer section; 通过减小上下波导之间的间隔层的厚度增加两波导间的耦合系数κ,从而减小耦合长度,耦合系数增加的上限为输入区上下波导间能实现的最大传播常数差的一半δβ;Increase the coupling coefficient κ between the two waveguides by reducing the thickness of the spacer layer between the upper and lower waveguides, thereby reducing the coupling length, and the upper limit of the increase in the coupling coefficient is half of the maximum propagation constant difference δβ that can be realized between the upper and lower waveguides in the input area; 在耦合区域的中段,上波导宽度逐步减小,上波导的宽度逐步减小满足以下公式:In the middle of the coupling region, the width of the upper waveguide gradually decreases, and the width of the upper waveguide gradually decreases to satisfy the following formula: β1(A)=β2+Δββ 1 (A) = β 2 + Δβ β1(B)=β2-Δββ 1 (B)=β 2 -Δβ 上式中,β1(A)为耦合区域中段的上波导的起始宽度所对应的模式传播常数,β1(B)为上波导的末端宽度所对应的模式传播常数,Δβ为上波导的最大制作容差所带来的上波导模式传播常数的偏移量;耦合区域的中段的长度为Lc的1.5~4倍,Lc定义为直波导耦合长度,Lc=π/(2κ)。In the above formula, β 1 (A) is the mode propagation constant corresponding to the initial width of the upper waveguide in the middle section of the coupling region, β 1 (B) is the mode propagation constant corresponding to the end width of the upper waveguide, Δβ is the upper waveguide The offset of the upper waveguide mode propagation constant brought by the maximum manufacturing tolerance; the length of the middle section of the coupling region is 1.5 to 4 times of L c , and L c is defined as the straight waveguide coupling length, L c = π/(2κ) . 2.根据权利要求1所述的具有大制作容差的超短垂直波导耦合器,其特征在于,在耦合区域的前段,上波导的宽度快速减小,其末端宽度与耦合区域中段的起始宽度相同。2. The ultra-short vertical waveguide coupler with large manufacturing tolerance according to claim 1, characterized in that, in the front section of the coupling region, the width of the upper waveguide decreases rapidly, and its end width is the same as the beginning of the middle section of the coupling region Same width. 3.根据权利要求1或2所述的具有大制作容差的超短垂直波导耦合器,其特征在于,在耦合区域的后段,上波导宽度快速减小,后段的起始宽度与中段的末端宽度相同,后段的末端宽度为制作允许的最小宽度,后段的末端为终止端,终止端面上镀有抗反射膜,以减小反射。3. The ultra-short vertical waveguide coupler with large manufacturing tolerance according to claim 1 or 2, characterized in that, in the rear section of the coupling region, the width of the upper waveguide decreases rapidly, and the initial width of the rear section is the same as that of the middle section The width of the end of the end is the same, the end width of the rear section is the minimum width allowed by the production, the end of the rear section is the termination end, and the end surface of the termination end is coated with an anti-reflection film to reduce reflection. 4.根据权利要求1所述的具有大制作容差的超短垂直波导耦合器,其特征在于,在耦合区域的中段,上波导模式通过共振转移的方式快速向下波导转移。4. The ultra-short vertical waveguide coupler with large manufacturing tolerance according to claim 1, characterized in that, in the middle section of the coupling region, the upper waveguide mode is quickly transferred to the lower waveguide by means of resonance transfer. 5.根据权利要求1所述的具有大制作容差的超短垂直波导耦合器,其特征在于,在耦合区域的中段,当上波导宽度因为制作精度的局限出现偏差时,上波导模式仍然能在中段的不同位置高效向下波导转移。5. The ultra-short vertical waveguide coupler with large manufacturing tolerance according to claim 1, characterized in that, in the middle section of the coupling region, when the upper waveguide width deviates due to the limitation of manufacturing accuracy, the upper waveguide mode can still Efficient down waveguide transfer at various locations in the midsection. 6.根据权利要求1所述的具有大制作容差的超短垂直波导耦合器,其特征在于,在输出区域只有下波导。6. The ultrashort vertical waveguide coupler with large manufacturing tolerances according to claim 1, characterized in that there is only the lower waveguide in the output region.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1564406A (en) * 2004-04-02 2005-01-12 华中科技大学 Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter
EP1297369B1 (en) * 2000-05-12 2006-09-27 The Trustees of Princeton University Photonic integrated detector having a plurality of asymmetric waveguides

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015002094B4 (en) * 2014-05-01 2019-08-22 Ngk Insulators, Ltd. Light-emitting device of the outer resonator type

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1297369B1 (en) * 2000-05-12 2006-09-27 The Trustees of Princeton University Photonic integrated detector having a plurality of asymmetric waveguides
CN1564406A (en) * 2004-04-02 2005-01-12 华中科技大学 Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Compact and highly-efficient polarization independent vertical resonant couplers for active-passive monolithic integration;Marko Galarza etal;《OPTICS EXPRESS》;Optical Society of America;20080523;第16卷(第12期);正文第2-4部分,附图1-6,表1-2
Compact spot-size converters with fiber-matched antiresonant reflecting optical waveguides;Marko Galarza etal;《APPLIED OPTICS》;Optical Society of America;20030820;第42卷(第24期);全文
Design of compact and efficient polarization-insensitive taper coupler for SiGe photonic integration;HENG ZHOU etal;《OPTICS EXPRESS》;Optical Society of America;20161004;第24卷(第21期);正文第1-4部分,附图2-14

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