CN106469645B - A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material - Google Patents

A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material Download PDF

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CN106469645B
CN106469645B CN201610821665.8A CN201610821665A CN106469645B CN 106469645 B CN106469645 B CN 106469645B CN 201610821665 A CN201610821665 A CN 201610821665A CN 106469645 B CN106469645 B CN 106469645B
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titanium dioxide
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tungsten
oxide film
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CN106469645A (en
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刘士彦
张依
姚博
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University of Shaoxing
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Abstract

The invention discloses a kind of preparation methods of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, and its step are as follows: step 1, preparing tungsten coating liquid；Step 2, TiO 2 coating film liquid is obtained；Step 3, modification liquid is prepared；Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nano-titanium dioxide precursor thin film；Step 6, the film base material in step 5 is subjected to high temperature sintering, forms nano-titanium dioxide-tungsten oxide film；Step 7, the film of step 6 is dipped in step 3 in ethanol water, multiple slightly boiled boiling, after pulling out, rapid curing；Step 8, the thin-film material in step 7 makes annealing treatment to obtain product.The problems such as preparation method of the present invention is simple, and flatness and the uniformity for solving titanizing and tungsten oxide film material are low, defect is big, roughness is high.

Description

A kind of preparation of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material Method
Technical field
The invention belongs to field of material technology, and in particular to a kind of organic superlattices anatase titanium dioxide titanizing tungsten oxide film is infrared The preparation method of light-sensitive material.
Background technique
In optoelectronic applications field, three-dimensional flower-shaped nano structural material is excellent with respect to for one-dimensional nano line and two-dimensional nano piece Gesture is fairly obvious, and high specific surface area is conducive to the absorption of photon, in interpenetrating network be conducive to photoproduction current-carrying Son transports.Two during the last ten years, and people have been successfully prepared many semiconductor flower-like nanometers crystalline substances by nanotechnology, such as aoxidizes Iron nanometer snowflake, zinc-oxide nano lilac, vulcanized lead nanometer Flos Albiziae, TiOx nano camellia, cupric oxide nano tree peony, sulphur Change copper nanometer rose, nanometer nickel sulfide flower, cobalt sulfide nano flower etc..But in the application of nano photoelectric device, three-dimensional flower-shaped nanometer Structural material is still faced with light induced electron and the high problem of hole-recombination probability.Recent study discovery, super-lattice nanostructure With the quantum confined effect that people wish eagerly, distinctive superlattices modulated structure is equivalent to heterojunction boundary, can be effectively Improve photo-generate electron-hole pair yield and separative efficiency, therefore super-lattice nanostructure be known as " open research in nanotechnology and The new page of application ".Yang study group is prepared for by mixed pulses laser ablation-chemical vapor deposition (PLA-CVD) technology Si/SiGe superlattices, GaAs/GaP superlattices have been made also by similar method in Lieber study group, and Samuelson is ground Study carefully group and InAs/InP superlattices are then obtained by chemical beam epitaxy technology CBE.The common feature of these methods is all to pass through gas Body-liquid-solid growth process (VLS) realizes equiblibrium mass distribution of the foreign atom in lattice, and this method is needed in reactant gas Multiple checker reactant under conditions of change, complex process equipment, operation require stringent and a large amount of energy consumptions, are difficult to realize industry Metaplasia produces.
Summary of the invention
The object of the present invention is to provide a kind of systems of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material Preparation Method, preparation method of the present invention is simple, and flatness and the uniformity for solving titanizing and tungsten oxide film material be low, defect Greatly, the problems such as roughness is high.
A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, its step are as follows:
Step 1, ammonium tungstate, tungsten chloride are put into alkaline solution, nanometer foaming agent is added, form tungsten coating liquid；
Step 2, tetrabutyl titanate, stabilizer, lysate, acidulant and bleeding agent are put into stirred tank, are stirred evenly TiO 2 coating film liquid can be obtained；
Step 3, using inorganic modifier and organic metal modifying agent as material, it is dipped to ethanol water, is modified Liquid；
Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；
Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nanometer titanium dioxide titanium precursor Film；
Step 6, the film base material in step 5 is subjected to high temperature sintering, it is thin forms nano-titanium dioxide-tungsten oxide Film；
Step 7, the film of step 6 is dipped in step 3 in ethanol water, heating for multiple times boiling, after pulling out, quickly Solidification；
Step 8, the thin-film material in step 7 makes annealing treatment to obtain product.
Formula in the step 1 is ammonium tungstate 6-10 parts, 1-3 parts of tungsten chloride, 30-50 parts of alkaline solution, nanometer foam 2-4 parts of agent；The alkaline solution uses sodium hydroxide solution or potassium hydroxide solution, and the nanometer foaming agent uses nano-sized carbon Sour hydrogen sodium.
Formula in the step 2 is tetrabutyl titanate 11-15 parts, 3-5 parts of stabilizer, 40-60 parts of lysate, acidulant 0.3-1.0 parts, 2-3 parts of bleeding agent；The stabilizer uses acetic acid acetone, and the lysate uses ethyl acetate or isopropanol, The acidulant uses fatty alcohol polyoxyethylene ether using one of acetic acid, hydrochloric acid or sulfuric acid, bleeding agent.
Formula in the step 3 is inorganic modifier 1-3 parts, 3-5 parts of organic metal modifying agent, ethanol water 20- 25 parts, ethanol content is 50-70% in the ethanol water；The inorganic modifier uses silica or silicon carbide, described Organic metal modifying agent uses acrylic tin or isopropyl alcohol radical nickel.
Soaking time in the step 4 is 11-20min, and the baking oven drying temperature is 90-110 DEG C, and drying time is 20-40min。
Rapid cooling in the step 5 uses air-cooled technology, and the flow velocity of the rapid cooling is 5-15mL/min.
High temperature sintering temperature in the step 6 is 250-320 DEG C, sintering time 2-4h.
Soaking time in the step 7 is 12-18min, and heating temperature is 100-120 DEG C, and the heating times are 2- 10 times.
Annealing in the step 8 is that 120-400 DEG C is heated under 20-35MPa pressure.
Compared with prior art, the invention has the following advantages:
1, preparation method of the present invention is simple, and flatness and the uniformity for solving titanizing and tungsten oxide film material are low, scarce Fall into the problems such as big, roughness is high.
2, the present invention is deposited in titanic oxide material surface using by modifying agent heating, fills up defect problem, can be significantly Photoelectric conductivity.
3, the present invention is uniformly mixed using uniformly mixed modification, organic-inorganic, can be greatly reduced defect, substantially reduced Roughness, film layer is more uniform, planarization is splendid.
Specific embodiment
The present invention is described further below with reference to embodiment:
Embodiment 1
A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, its step are as follows:
Step 1, ammonium tungstate, tungsten chloride are put into alkaline solution, nanometer foaming agent is added, form tungsten coating liquid；
Step 2, tetrabutyl titanate, stabilizer, lysate, acidulant and bleeding agent are put into stirred tank, are stirred evenly TiO 2 coating film liquid can be obtained；
Step 3, using inorganic modifier and organic metal modifying agent as material, it is dipped to ethanol water, is modified Liquid；
Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；
Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nanometer titanium dioxide titanium precursor Film；.
Soaking time in the step 4 is 11min, and the baking oven drying temperature is 90 DEG C, drying time 200min.
Rapid cooling in the step 5 uses air-cooled technology, and the flow velocity of the rapid cooling is 5mL/min.
High temperature sintering temperature in the step 6 is 250 DEG C, sintering time 2h.
Soaking time in the step 7 is 12min, and heating temperature is 100 DEG C, and the heating times are 2 times.
Annealing in the step 8 is that 120 DEG C are heated under 20MPa pressure.
Embodiment 2
A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, its step are as follows:
Step 1, ammonium tungstate, tungsten chloride are put into alkaline solution, nanometer foaming agent is added, form tungsten coating liquid；
Step 2, tetrabutyl titanate, stabilizer, lysate, acidulant and bleeding agent are put into stirred tank, are stirred evenly TiO 2 coating film liquid can be obtained；
Step 3, using inorganic modifier and organic metal modifying agent as material, it is dipped to ethanol water, is modified Liquid；
Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；
Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nanometer titanium dioxide titanium precursor Film；
Step 6, the film base material in step 5 is subjected to high temperature sintering, it is thin forms nano-titanium dioxide-tungsten oxide Film；
Step 7, the film of step 6 is dipped in step 3 in ethanol water, heating for multiple times boiling, after pulling out, quickly Solidification；
Step 8, the thin-film material in step 7 makes annealing treatment to obtain product.
Formula in the step 1 is 10 parts of ammonium tungstate, 3 parts of tungsten chloride, 4 parts of 50 part, nanometer foaming agent of alkaline solution；Institute Alkaline solution is stated using potassium hydroxide solution, the nanometer foaming agent uses nano-calcium carbonate hydrogen sodium.
Formula in the step 2 is 15 parts of tetrabutyl titanate, 5 parts of stabilizer, 60 parts of lysate, 1.0 parts of acidulant, seeps Saturating 3 parts of agent；The stabilizer uses acetic acid acetone, and the lysate uses isopropanol, and the acidulant uses hydrochloric acid, bleeding agent Using fatty alcohol polyoxyethylene ether.
Formula in the step 3 is 3 parts of inorganic modifier, 5 parts of organic metal modifying agent, 25 parts of ethanol water, institute Stating ethanol content in ethanol water is 70%；The inorganic modifier uses silicon carbide, and the organic metal modifying agent uses Isopropyl alcohol radical nickel.
Soaking time in the step 4 is 20min, and the baking oven drying temperature is 110 DEG C, drying time 40min.
Rapid cooling in the step 5 uses air-cooled technology, and the flow velocity of the rapid cooling is 15mL/min.
High temperature sintering temperature in the step 6 is 320 DEG C, sintering time 4h.
Soaking time in the step 7 is 18min, and heating temperature is 120 DEG C, and the heating times are 10 times.
Annealing in the step 8 is that 400 DEG C are heated under 35MPa pressure.
Embodiment 3
A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, its step are as follows:
Step 1, ammonium tungstate, tungsten chloride are put into alkaline solution, nanometer foaming agent is added, form tungsten coating liquid；
Step 2, tetrabutyl titanate, stabilizer, lysate, acidulant and bleeding agent are put into stirred tank, are stirred evenly TiO 2 coating film liquid can be obtained；
Step 3, using inorganic modifier and organic metal modifying agent as material, it is dipped to ethanol water, is modified Liquid；
Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；
Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nanometer titanium dioxide titanium precursor Film；
Step 6, the film base material in step 5 is subjected to high temperature sintering, it is thin forms nano-titanium dioxide-tungsten oxide Film；
Step 7, the film of step 6 is dipped in step 3 in ethanol water, heating for multiple times boiling, after pulling out, quickly Solidification；
Step 8, the thin-film material in step 7 makes annealing treatment to obtain product.
Formula in the step 1 is 8 parts of ammonium tungstate, 2 parts of tungsten chloride, 4 parts of 45 part, nanometer foaming agent of alkaline solution；Institute Alkaline solution is stated using sodium hydroxide solution, the nanometer foaming agent uses nano-calcium carbonate hydrogen sodium.
Formula in the step 2 is 13 parts of tetrabutyl titanate, 4 parts of stabilizer, 55 parts of lysate, 0.9 part of acidulant, seeps Saturating 3 parts of agent；The stabilizer uses acetic acid acetone, and the lysate uses isopropanol, and the acidulant uses sulfuric acid, bleeding agent Using fatty alcohol polyoxyethylene ether.
Formula in the step 3 is 2 parts of inorganic modifier, 4 parts of organic metal modifying agent, 24 parts of ethanol water, institute Stating ethanol content in ethanol water is 60%；The inorganic modifier uses silica, and the organic metal modifying agent uses Acrylic tin.
Soaking time in the step 4 is 15min, and the baking oven drying temperature is 100 DEG C, drying time 35min.
Rapid cooling in the step 5 uses air-cooled technology, and the flow velocity of the rapid cooling is 5-15mL/min.
High temperature sintering temperature in the step 6 is 290 DEG C, sintering time 4h.
Soaking time in the step 7 is 16min, and heating temperature is 110 DEG C, and the heating times are 8 times.
Annealing in the step 8 is that 320 DEG C are heated under 28MPa pressure.
The foregoing is merely one embodiment of the invention, are not intended to limit the present invention, all to use equivalent substitution or equivalent transformation Mode technical solution obtained, fall within the scope of protection of the present invention.

Claims (7)

1. a kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material, its step are as follows:
Step 1, ammonium tungstate, tungsten chloride are put into alkaline solution, nanometer foaming agent is added, form tungsten coating liquid；
Step 2, tetrabutyl titanate, stabilizer, lysate, acidulant and bleeding agent are put into stirred tank, are stirred evenly Obtain TiO 2 coating film liquid；
Step 3, using inorganic modifier and organic metal modifying agent as material, it is dipped to ethanol water, obtains modification liquid；
Step 4, base material is dipped in tungsten coating liquid, after mixing evenly, in drying in oven, obtains tungsten film；
Step 5, tungsten film is dipped in TiO 2 coating film liquid, is then quickly cooled down, form nano-titanium dioxide precursor thin film；
Step 6, the film base material in step 5 is subjected to high temperature sintering, forms nano-titanium dioxide-tungsten oxide film；
Step 7, the film of step 6 is dipped in step 3 in ethanol water, heating for multiple times boiling, it is quickly solid after pulling out Change；
Step 8, the thin-film material in step 7 makes annealing treatment to obtain product；
Formula in the step 2 is tetrabutyl titanate 11-15 parts, 3-5 parts of stabilizer, 40-60 parts of lysate, acidulant 0.3- 1.0 parts, 2-3 parts of bleeding agent；The stabilizer uses acetic acid acetone, and the lysate uses ethyl acetate or isopropanol, described Acidulant uses fatty alcohol polyoxyethylene ether using one of acetic acid, hydrochloric acid or sulfuric acid, bleeding agent；
Soaking time in the step 7 is 12-18min, and the temperature of boiling is 100-120 DEG C, and number is 2-10 times.
2. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the formula in the step 1 is ammonium tungstate 6-10 parts, 1-3 parts of tungsten chloride, alkaline solution 30-50 Part, 2-4 parts of nanometer foaming agent；The alkaline solution uses sodium hydroxide solution or potassium hydroxide solution, the nanometer foaming Agent uses nano-calcium carbonate hydrogen sodium.
3. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the formula in the step 3 is inorganic modifier 1-3 parts, 3-5 parts of organic metal modifying agent, ethyl alcohol 20-25 parts of aqueous solution, ethanol content is 50-70% in the ethanol water；The inorganic modifier uses silica or carbon SiClx, the organic metal modifying agent use acrylic tin or isopropyl alcohol radical nickel.
4. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the soaking time in the step 4 is 11-20min, and the baking oven drying temperature is 90-110 DEG C, Drying time is 20-40min.
5. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the rapid cooling in the step 5 uses air-cooled technology, and the flow velocity of the rapid cooling is 5- 15mL/min。
6. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the high temperature sintering temperature in the step 6 is 250-320 DEG C, sintering time 2-4h.
7. a kind of system of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material according to claim 1 Preparation Method, which is characterized in that the annealing in the step 8 is that 120-400 DEG C is heated under 20-35MPa pressure.
CN201610821665.8A 2016-09-14 2016-09-14 A kind of preparation method of organic superlattices anatase titanium dioxide titanizing tungsten oxide film infra-red sensitive material Active CN106469645B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101757907A (en) * 2008-12-26 2010-06-30 晶锐瓷业（北京）有限公司 Titanium dioxide powder containing tungsten for preparing honeycomb SCR DeNOx catalyst and preparation method thereof
CN103646989A (en) * 2013-11-27 2014-03-19 华东师范大学 Preparation method of p-n type Cu2O/TiO2 nanowire array composite film
CN104163453A (en) * 2014-07-21 2014-11-26 复旦大学 Preparation method of highly-ordered nano particle superlattice material
CN105789352A (en) * 2016-03-24 2016-07-20 上海交通大学 Tungsten trioxide/titanium dioxide nano heterojunction thin film and preparation and application thereof

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* Cited by examiner, † Cited by third party
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JP6141777B2 (en) * 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101757907A (en) * 2008-12-26 2010-06-30 晶锐瓷业（北京）有限公司 Titanium dioxide powder containing tungsten for preparing honeycomb SCR DeNOx catalyst and preparation method thereof
CN103646989A (en) * 2013-11-27 2014-03-19 华东师范大学 Preparation method of p-n type Cu2O/TiO2 nanowire array composite film
CN104163453A (en) * 2014-07-21 2014-11-26 复旦大学 Preparation method of highly-ordered nano particle superlattice material
CN105789352A (en) * 2016-03-24 2016-07-20 上海交通大学 Tungsten trioxide/titanium dioxide nano heterojunction thin film and preparation and application thereof

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