CN106466807B - Chemical mechanical polishing apparatus and method - Google Patents
Chemical mechanical polishing apparatus and method Download PDFInfo
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- CN106466807B CN106466807B CN201511023760.5A CN201511023760A CN106466807B CN 106466807 B CN106466807 B CN 106466807B CN 201511023760 A CN201511023760 A CN 201511023760A CN 106466807 B CN106466807 B CN 106466807B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
It is related to chemical mechanical polishing apparatus and method, chemical mechanical polishing apparatus includes: polishing plate, and upper surface polished pad covers, and carries out rotation；Rubbing head, with retaining ring, it is in contact in chemical-mechanical polishing process with the plate surface of chip to pressurize, retaining ring includes the first, second component, the first component is formed by conductive material, and first, second step surface with different height is formed in wafer periphery, second component is laminated by non-conductive component in the downside of the first component, is contacted in chemical-mechanical polishing process with polishing pad；Thickness transducer, apply eddy current signal to chip, to obtain wafer thickness information, control unit, from thickness transducer the received thickness information that polishing pad is obtained from the second output signal of the first, second step surface, the third output signal that the polishing layer from chip is obtained by thickness transducer reflects the thickness information of polishing pad, from third output signal to obtain the thickness of wafer polishing layer.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing apparatus and methods, and in more detail, being related to one kind can be in chemical machinery
Reflect the thickness change of polishing pad in polishing process accurately to obtain the change of the wafer polishing thickness degree formed by conductive material
Learn mechanical polishing apparatus and method.
Background technique
Under normal circumstances, (Chemical Mechanical Polishing is chemically-mechanicapolish polished；CMP) process refers to, with
The state that the substrates such as chip are contacted on the polishing plate rotated is rotated, and executes mechanical polishing to make the table of substrate
Face becomes flat, the process to reach preassigned thickness.
For this purpose, as shown in Figure 1, chemical mechanical polishing apparatus 1 is on one side so that the top of the covering polishing plate 12 of polishing pad 11
State carry out rotation, to the surface-pressure wafer W of polishing pad 11 and rotated using rubbing head 20 on one side, thus to chip
The surface of W is flatly polished.For this purpose, having adjuster 30, above-mentioned adjuster 30 is used for so that the surface of polishing pad 11 is pressed
The mode that defined state is maintained carries out rotation 30r, and implements to be modified, by slurry supply unit 40 come to polishing pad 11
Surface supplies the slurry for executing chemical polishing.
At the same time, the thickness transducer 50 of the polishing layer thickness for measuring wafer W is provided in polishing pad 11, with
Polishing pad 11 is rotated together, and the downside from one side Jing Guo wafer W, and received receive measures wafer W on one side in signal
Polishing layer thickness.According to different situations, it is provided on the downside of wafer W for penetrating through polishing pad 11 and polishing the saturating of plate 11
Bright window, and the output signal comprising polishing layer thickness information is received from wafer W in the lower part of transparency window, to measure the throwing of wafer W
Photosphere thickness.
Here, whether the thickness that measurement polishing layer thickness includes only monitoring polishing layer reaches target thickness.
In the case where forming the polishing layer of wafer W by metal materials such as tungsten as conductive material, thickness transducer 50
With the sensor coil for being configured at the polishing layers such as copper in a neighboring manner, projected by applying Si alternating current in wafer polishing
Layer forms the vortex input signal of vortex, thus as shown in figure 3, the synthesis of the vortex 50E guided from electric conductivity polishing layer
The polishing layer thickness of wafer W is detected in the changing value of impedance and phase difference.
But in chemical-mechanical polishing process, as the polishing layer Le of wafer W is polished, by the material being worn
The polishing pad 11 of formation similarly obtains subtle abrasion, so that thickness changes.In particular, due to the polishing layer Le of chip
The adjusting allowable error of target thickness is tens ofOr even it is hundreds ofIt is i.e. very small, thus there are the following problems: that is, reason is thrown
Error caused by the thickness change of light pad 11 and cause the polishing layer Le of chip thickness distribution and polishing end time point obtain
A possibility that wrong identification, is big.
Therefore, in chemical-mechanical polishing process, it is necessary in the mistake that the polishing layer thickness to wafer W is measured in real time
The thickness change of same real-time detection polishing pad 11 in journey.
The change value of thickness of polishing pad 11 can by non-contact optical sensor or the probe assay flexibly supported by spring,
But because on polishing pad 11 slurry, the polishing slurries such as particle due to reduce measurement precision by non-contact optical sensor, cause
Biggish error, thus it is difficult the change value of thickness of accurately real-time detection polishing pad 11.
There is the limitation that the accuracy of the polishing layer thickness of wafer W is lower in the past as a result,.
Summary of the invention
The technical issues of solution
The present invention proposes to solve the problems, such as described above, it is an object of the present invention in chemically mechanical polishing work
Reflect the thickness change of polishing pad in sequence accurately to obtain the wafer polishing thickness degree formed by conductive material.
Moreover, it is an object of the present invention to the thickness for calculating the abrasion based on polishing pad in a manner of mutually linking becomes
The polishing layer thickness variation of change value and chip, to make control method become simply, and obtain compared with being calculated separately
Obtain more accurate wafer polishing thickness degree.
As a result, it is an object of the present invention to detect the polishing end time point of chip, accurately accurately to control chip
Polishing thickness.
Technical solution
It is that throwing is formed by conductive material to realize that purpose as described above, the present invention provide chemical mechanical polishing apparatus
The chemical mechanical polishing apparatus of the chip of photosphere characterized by comprising polishing plate, the upper surface quilt of above-mentioned polishing plate
Polishing pad covering, and carry out rotation；Rubbing head, above-mentioned rubbing head have retaining ring, in chemical-mechanical polishing process, above-mentioned polishing
Head is in contact to pressurize with the plate surface of above-mentioned chip, and above-mentioned retaining ring includes the first component and second component, and above-mentioned first
Component is formed by conductive material, and along forming the First terrace with mutually different height and the around above-mentioned chip
Two step surfaces, above-mentioned second component are laminated in the downside of the above-mentioned first component by non-conductive component, and in above-mentioned chemistry
It is in contact in mechanical polishing process with above-mentioned polishing pad；Thickness transducer, Xiang Shangshu chip applies eddy current signal, above-mentioned to obtain
The thickness information of chip；And control unit, received from least part thickness transducer institute in above-mentioned thickness transducer
The second output signal from above-mentioned First terrace and above-mentioned second step face obtains the thickness information of above-mentioned polishing pad, and
The third output of the polishing layer from above-mentioned chip is obtained by least part thickness transducer in above-mentioned thickness transducer
Signal, and reflect from above-mentioned third output signal the thickness information of above-mentioned polishing pad, to obtain the thickness of above-mentioned wafer polishing layer
Degree.
Like this, the present invention can obtain following excellent effect: fall into a trap in the vortex output signal of the conductive layer from chip
Reflect the amounts of thickness variation of polishing pad in the thickness of the conductive layer of the chip of calculation, considers polishing pad so as to accurately measure
The thickness of the conductive layer of the chip of abrasion loss.
At this point, above-mentioned control unit can receive from above-mentioned thickness transducer and come from above-mentioned first step in first time point
First output signal in face and above-mentioned second step face, at the second time point for being later than above-mentioned first time point, above-mentioned control unit
The second output signal from above-mentioned First terrace and above-mentioned second step face can be received from above-mentioned thickness transducer and is come
From the third output signal of above-mentioned wafer polishing layer, and according to the variation of above-mentioned first output signal and above-mentioned second output signal
Amount is to correct above-mentioned third output signal, to obtain the thickness of above-mentioned chip.
That is, being believed in first time point by received first output of the First terrace of retaining ring and second step face
Number, by received second output signal of the First terrace of retaining ring and second step face comprising to polishing pad in the second time point
Change value of thickness information, and the second output signal of the thickness variation data with polishing pad and to the of wafer polishing layer
Three output signals are the signal for being measured and obtaining together, therefore, will be for the second output of the first output signal as long as generating
The variable quantity of signal is reflected in the correction signal of third output signal, so that if obtaining the polishing of chip from above-mentioned correction signal
Thickness degree, so that it may obtain following effect, that is, the thickness for reflecting polishing pad in the polishing layer thickness of chip can be accurately obtained
Spend the wafer polishing thickness degree of changing value.
Here, above-mentioned first time point can be designated as executing the time point before above-mentioned chemical-mechanical polishing process,
Above-mentioned second time point can be designated as being carrying out the time point of chemical-mechanical polishing process.That is, third output signal
Correction signal can be based on the polishing pad at (the second time point) in the process for polishing mat thickness to initial (first time point)
The variable quantity of thickness is corrected.It in other words, can be in crystalline substance on the basis of the time point for starting to execute chemical-mechanical polishing process
Reflect the cumulative attrition amount of polishing pad in the thickness of piece polishing layer.
Alternatively, above-mentioned first time point and above-mentioned second time point can be designated as being carrying out chemically mechanical polishing
The time point of process.That is, for the polishing mat thickness for the arbitrary first time point for being carrying out chemical-mechanical polishing process, the
The correction signal of three output signals can be based on the chemical machinery executed until beginning to pass through the specified time from above-mentioned time point
The variable quantity of the thickness of the polishing pad at the second time point of polishing process is corrected.It in other words, can be in wafer polishing layer
Thickness in be only reflected in the mill of polishing pad performed in any two time point after executing chemical-mechanical polishing process
Damage amount.
Like this, reflect in the polishing layer THICKNESS CALCULATION of chip for executing chemical-mechanical polishing process and executing chemistry
The thickness as caused by the abrasion of polishing pad in a period of mutually different two time points is executed during mechanical polishing process
Variable quantity, so as to obtain more accurate wafer polishing thickness degree in chemical-mechanical polishing process.
More specifically, above-mentioned control unit can be to reduce the deviation of above-mentioned second output signal and above-mentioned first output signal
Mode above-mentioned second output signal is corrected, and ratio is in the correcting value of above-mentioned second output signal, to above-mentioned
Third output signal is corrected, and thus calculates correction signal, and the thickness of above-mentioned chip is obtained from above-mentioned correction signal.
For example, above-mentioned correction signal can be by the ratio between above-mentioned first output signal and above-mentioned second output signal
0.5 times to 1.5 times of variation ratio is obtained multiplied by above-mentioned third output signal.Alternatively, above-mentioned correction signal can by
0.5 times to 1.5 of the difference as above-mentioned first output signal and above-mentioned second output signal is subtracted in above-mentioned third output signal
Times variation difference obtain.
As a result, as the process of the polishing layer thickness of the change value of thickness and chip that acquire polishing pad is combined into one, this hair
It is bright can it is more convenient in chemical-mechanical polishing process and accurately obtain reflection have polishing pad thickness change chip polishing
Thickness degree.
Moreover, during acquiring the change value of thickness of polishing pad, without to polishing pad irradiation light or making by bullet
Spring and the probe flexibly supported is in contact with polishing pad, thus the slurry by the surface for remaining on polishing pad can be achieved without
Deng influence and measure reflection have accurate polishing pad change value of thickness wafer polishing layer thickness beneficial effect.
On the other hand, above-mentioned control unit can from above-mentioned first output signal and above-mentioned second output signal independent detection
The thickness change of above-mentioned polishing pad.That is, as retaining ring is to include by having First terrace and second as electroconductive component
The first component of step surface and the mode of second component of downside that the first component is formed in as non-conductive component are formed,
To realize pressurization and abrasion to polishing pad by the second component as non-conducting material, and with First terrace and
Second step face is formed with mutually different height by electroconductive component, can be at two of First terrace and second step face
Using the difference in height of the First terrace and second step face grasped in advance come independently of wafer polishing thickness in output signal
The calculating of degree and the amounts of thickness variation for obtaining polishing pad.
Therefore, above-mentioned control unit detects above-mentioned wafer polishing layer thickness variation from above-mentioned third output signal, and to from
It is anti-in the wafer polishing thickness degree that the polishing layer thickness for the above-mentioned chip that above-mentioned third output signal obtains is corrected to obtain
It reflects the amounts of thickness variation of the polishing pad independently obtained as described above and is corrected, thus, it is possible to acquire reflection to have polishing pad
The thickness of the wafer polishing layer of amounts of thickness variation.
At this point, above-mentioned First terrace and above-mentioned second step face are respectively formed as horizontal flat surface, so as to equal
Weighing apparatus ground obtains the vortex output signal of each step surface of the retaining ring rotated.
And, it is preferable that above-mentioned First terrace and the height tolerance in above-mentioned second step face are protected in whole circumference direction
It holds constant.
Moreover, above-mentioned First terrace and above-mentioned second step face difference are in a ring, and it is distributed from center to radial direction
In mutually different length, so as to balancedly obtain the retaining ring rotated each step surface vortex output signal.
On the other hand, the above-mentioned first component can be formed by metal material, and above-mentioned second component can be by resin, plastics
More than one material formed.The electric current perforation second component applied as a result, comes first in conductive metal material
Vortex is generated in part, so as to obtain vortex output signal in First terrace and second step face.
In this case, the configuration of above-mentioned thickness transducer is there are three more than, for receive respectively from above-mentioned chip,
State the output signal of First terrace and above-mentioned second step face.Thus, it is possible to from the defeated of First terrace and second step face
The change value of thickness of polishing pad is calculated in signal out, and obtains the thickness data of chip from the output signal in chip.
On the other hand, the above-mentioned first component in a ring, so as to be easily installed at rubbing head, also, with along
The entire circular arc for surrounding chip forms step surface, can also be with even if rubbing head carries out rotation in chemical-mechanical polishing process
To receive the thickness change of output signal and real-time detection polishing pad from First terrace and second step face by sensor
Amount.
Even if moreover, above-mentioned second component not in a ring even, can constant maintenance and polishing pad but in a ring
The face being in contact, and the stable contact condition of polishing pad can be maintained with no damage.
On the other hand, another embodiment according to the present invention, the present invention provide cmp method, are by conduction
Material forms the cmp method of the chip of polishing layer characterized by comprising wafer polishing step makes above-mentioned crystalline substance
Piece is located at the downside of the rubbing head with retaining ring, in CMP process, with the plate surface of above-mentioned chip and above-mentioned throwing
The state that light pad is in contact is pressurizeed, and executes the polishing of above-mentioned chip, and above-mentioned retaining ring includes the first component and second component,
The above-mentioned first component is formed by conductive material, and has the First of mutually different height along formation around above-mentioned chip
Terrace and second step face, above-mentioned second component are laminated in the downside of the above-mentioned first component by non-conductive component, and
It is in contact in above-mentioned chemical-mechanical polishing process with above-mentioned polishing pad；Wafer thickness information receiving step, from thickness transducer to
Above-mentioned chip applies eddy current signal, to obtain the thickness information of above-mentioned chip；Polishing layer thickness obtaining step is passed from above-mentioned thickness
The second output signal received by sensor from above-mentioned First terrace and above-mentioned second step face obtains above-mentioned polishing pad
Thickness information, and obtain above-mentioned thickness transducer the received polishing layer from above-mentioned chip third output signal, and
Reflect the thickness information of above-mentioned polishing pad from above-mentioned third output signal to obtain the thickness of above-mentioned wafer polishing layer.
In above-mentioned polishing layer thickness obtaining step, it can be received from above-mentioned thickness transducer from upper in first time point
The first output signal of First terrace and above-mentioned second step face is stated, it can be in the second time for being later than above-mentioned first time point
Point receives the second output signal from above-mentioned First terrace and above-mentioned second step face from above-mentioned thickness transducer and comes from
The third output signal of above-mentioned wafer polishing layer, and according to the variable quantity of above-mentioned first output signal and above-mentioned second output signal
Above-mentioned third output signal is corrected, obtaining the thickness of above-mentioned chip.
Moreover, above-mentioned first time point can to execute the time point before above-mentioned chemical-mechanical polishing process, above-mentioned the
Two time points can be the time point for being carrying out chemical-mechanical polishing process.
Different from this, above-mentioned first time point and above-mentioned second time point all can be carrying out chemically mechanical polishing work
The time point of sequence.
It, can be to reduce above-mentioned second output signal and above-mentioned first also, in above-mentioned polishing layer thickness obtaining step
The mode of the deviation of output signal is corrected above-mentioned second output signal, and ratio is in above-mentioned second output signal
Correcting value is corrected above-mentioned third output signal, thus calculates correction signal, and obtain above-mentioned crystalline substance from above-mentioned correction signal
The thickness of piece.
Moreover, above-mentioned correction signal can be by the ratio between above-mentioned first output signal and above-mentioned second output signal
0.5 times to 1.5 times of variation ratio is obtained multiplied by above-mentioned third output signal.
On the other hand, above-mentioned correction signal can be by subtracting in above-mentioned third output signal as above-mentioned first output
0.5 times to 1.5 times of variation difference of the difference of signal and above-mentioned second output signal obtains.
Equally, above-mentioned thickness transducer can be configured there are three more than, for being received respectively from above-mentioned chip, above-mentioned the
The output signal in one step surface and above-mentioned second step face.Different from this, the present invention can be utilized according to the rotation of polishing pad
One thickness transducer is believed to receive all outputs from above-mentioned chip, above-mentioned First terrace and above-mentioned second step face
Number.
Invention effect
As described above, the present invention can obtain following excellent effect: in the vortex output signal of the conductive layer from chip
Reflect the amounts of thickness variation of polishing pad in the thickness of the conductive layer of the chip of calculating, so as to accurately measure consideration polishing pad
Abrasion loss chip conductive layer thickness.
Most of all, the present invention can obtain following excellent effect: with from starting to execute chemical-mechanical polishing process
Time light the time point for being accumulate to and being carrying out chemical-mechanical polishing process until polishing pad amounts of thickness variation on the basis of,
The thickness of wafer polishing layer is corrected, it is hereby achieved that the wafer polishing layer that the amounts of thickness variation of polishing pad is corrected
Thickness.
Also, the present invention can obtain following excellent effect: although can be during executing chemical-mechanical polishing process
The interior abrasion loss for independently acquiring polishing pad is connected to be reflected in wafer polishing thickness degree by the abrasion loss with polishing pad
Wafer polishing thickness degree disposably is acquired, so that not only control method can be made by more simplified signal processing process
Become simple, and can more accurately and rapidly obtain the thickness of wafer polishing layer.
The present invention can obtain following excellent effect as a result: the polishing end time point that can accurately detect chip comes
Accurately control the polishing thickness of chip.
Detailed description of the invention
Fig. 1 is the main view for showing the structure of previous chemical mechanical polishing apparatus.
Fig. 2 is the top view of Fig. 1.
Fig. 3 is the half sectional view for being used in the rubbing head of Fig. 1.
Fig. 4 is the figure for showing for identical chip the vortex output signal measured.
Fig. 5 is the precedence diagram for showing the job order of chemical mechanical polishing apparatus of one embodiment of the invention.
Fig. 6 a is to show in the state of not set chip by a form of received first output signal of thickness transducer
Figure.
Fig. 6 b is the figure for showing using the device of Fig. 5 the composition for executing chemical-mechanical polishing process.
Fig. 6 c be show in the chemical-mechanical polishing process of Fig. 6 b by received second output signal of thickness transducer and
The figure of one form of third output signal.
Fig. 6 d is the enlarged drawing of the output signal of Fig. 6 c.
Fig. 6 e is the enlarged drawing of part " B " of Fig. 6 d.
Fig. 6 f is to show the corrected correction signal of third output signal for generating and receiving from the polishing layer of chip
Principle figure.
Fig. 7 is the step surface for the retaining ring using rubbing head to calculate part " A " of Fig. 6 a of the thickness of polishing pad
Enlarged drawing.
Fig. 8 is the precedence diagram being illustrated for the principle of the thickness to the polishing pad for calculating Fig. 7.
The explanation of appended drawing reference
10: polishing plate 11: polishing pad
100: rubbing head 121: diaphragm
122: body part 123: retaining ring
123s1: First terrace 123s2: second step face
50,500: eddy current sensor 90: control unit
So1: the first the So2: the second output signal of output signal
So3: third output signal So3c: correction signal
Specific embodiment
Hereinafter, to the chemical mechanical polishing apparatus 9 of one embodiment of the invention and being used in above-mentioned chemical machine referring to attached drawing
The rubbing head 100 of tool burnishing device 9 is described in detail.However, in the course of describing the present invention, in order to clear
The gist of the invention illustrates omission to well known function or structure.
The chemical mechanical polishing apparatus 9 of one embodiment of the invention includes: polishing plate 10, is thrown by the burnishing surface of wafer W
The polishing pad 11 that the mode of light is contacted covers；Rubbing head 100 so that the state that wafer W is located at bottom surface is pressurizeed, and makes
Wafer W carries out rotation；Eddy current sensor 50 applies vortex, the thickness of the polishing layer for detecting wafer W, and connects from polishing layer
Receive output signal；And control unit 90, apply alternating current to eddy current sensor 50, and receiving from eddy current sensor 50
The polishing layer thickness of output signal detection wafer W.
Above-mentioned polishing plate 10 carries out rotation driving with the state that upper surface polished pad 11 covers.As shown in Figure 6 b, exist
Polishing plate 10 is provided with the through hole 10a for applying eddy current signal, it is thus possible to from the downside for being configured at through hole 10a
Thickness transducer 500 applies vortex to wafer W and retaining ring 123.
On the other hand, as shown in Figure 6 b, therefore thickness transducer 50, which can be fixed on polishing plate 10, can make thickness
Sensor 50 is rotated together with the polishing pad 11 rotated, and vortex output is received along the track Jing Guo wafer W
Signal.
Although downside and polishing plate that thickness transducer 50,500 is fixed on through hole 10a are illustrated in attached drawing together
10 structure, but another implementation form according to the present invention, thickness transducer 50,500 can be set in the downside of through hole 10a
With any one in polishing plate 10.
As shown in Figure 6 a, above-mentioned rubbing head 100 includes: body part 122, carries out rotation driving from outside；Diaphragm 121,
It is provided between body part 122 in the state of pressure chamber C and is fixed on body part 122；And retaining ring 123, surround diaphragm 121
Bottom plate around.
Here, the pressure chamber C being formed between diaphragm 121 and body part 122 is prominent with annular by the bottom plate from diaphragm
Flat (Flap) out is formed as being divided into multiple pressure chamber.Moreover, from pressure regulating part 125, by pneumatic
Supply pipe 125a is independently supplied pneumatically to each pressure chamber C, for adjusting the pressure of pressure chamber C, and to pressure
During cavity C supply is pneumatic, the bottom plate of diaphragm is pushed downwards, to be located at the bottom plate of diaphragm towards the pressurization of polishing pad 11
Downside wafer W.
At the same time, as body part 122 rotates, diaphragm 121 also rotates together with, therefore, positioned at the bottom plate of diaphragm 121
The wafer W of bottom surface also rotates together with, and realizes chemical-mechanical polishing process.
Moreover, retaining ring 123 is carrying out the annular around the wafer W of chemical-mechanical polishing process in encirclement, and adjusting
Section in the upside of retaining ring 123 holding room 123C it is pneumatic during, as shown in fig 6e, in chemical-mechanical polishing process
In, bottom surface 123s maintains the state of the pressurization of polished pad 11.As a result, in retaining ring 123, including the bottom being in contact with polishing pad 11
The second component 1232 of face 123s is formed by the expendable material of the resin, plastics etc that can wear.
That is, retaining ring 123 includes the second component 1232 being in contact with polishing pad 11 and is laminated in the upper of second component 1232
The first component 1231 of side.It is formed in the boundary face being in contact by the first component 1231 and second component 1232 with different
Height First terrace 123s1 and second step face 123s2.At this point, the first component 1231 can be by conductions such as such as metals
Material is formed, to generate vortex.Moreover, second component is formed by non-conducting materials such as such as plastics or resin, for making from whirlpool
The input signal that flow sensor 51,52 applies is passed through, and is generated and be vortexed in the first component 1231.
The first component 1231 can form thin thickness, but compared to the polishing layer of the wafer W formed by conductive material
Le forms more thick, i.e., more than 10 times to hundreds times.As a result, until from thickness transducer 50 to step surface 123s1,123s2
Distance determines thickness transducer 50,500 from the big of the received output signal of step surface 123s1,123s2 of the first component 1231
It is small.
At this point, First terrace 123s1 and second step face 123s2 are formed as horizontal flat surface, and with from diaphragm 121
Center towards being formed with annular spread in the length of mutually different radial direction.Even if retaining ring 123 is in chemical machinery as a result,
It is persistently rotated in polishing process, for generating the first thickness sensor 51 of vortex in First terrace 123s1 and for the
As defined in the second thickness sensor 52 that two step surface 123s2 generate vortex can also be generated in each step surface 123s1,123s2
Vortex, so as to equably obtain vortex output signal Sos1, Sos2 in each step surface 123s1,123s2 of retaining ring 123.
Moreover, as long as the form that the first component 1231 is formed as surrounding around wafer W is (including circumferentially with phase
The form that the mode mutually separated configures) it is just enough, but be formed as the shape surrounded around wafer W using the annular as closed curve
State, to, even if retaining ring 123 and rubbing head 100 carry out rotation together, come from thickness transducer in chemical-mechanical polishing process
52 vortex also reaches each step surface 123s1,123s2 always.
As long as also, second component 1232 equally also in order to prevent the disengaging of wafer W and be formed as surround wafer W around
Form (including circumferentially in the form of mode spaced apart from each other configures) just enough, but preferably, in order to polishing
Pad 11 maintain as defined in contact surface and in a ring.
On the other hand, the height tolerance y of the First terrace 123s1 of retaining ring 123 and second step face 123s2 are entirely justifying
The constant formation of circumferential direction, thus have any position of circumferencial direction can consistently obtain vortex output signal Sos1,
The advantages of Sos2.Moreover, as shown, First terrace 123s1 and second step face 123s2 respectively in a ring, thus from every
The center of the bottom plate of film is distributed in mutually different length to radial direction.
Conduct in the rubbing head 100 of the one embodiment of the invention constituted in the manner, in retaining ring 123
The first component 1231 of conductive material and second component 1232 as non-conducting material are with the platform with mutually different height
The mode of terrace 123s1,123s2 are formed, and are come by the input signal Si 1 that applies from eddy current sensor 51,52, Si2
Each step surface 123s1,123s2 introduction of eddy currents of two components 1232, so as to receive step surface in eddy current sensor 51,52
Output signal (for example, resonant frequency or resultant impedance) Sos1, Sos2 based on vortex in 123s1,123s2.
At this point, due to having grasped the height tolerance y between each step surface 123s1,123s2, thus have the advantages that
The mutual not phase that can be obtained from output signal Sos1, Sos2 in real-time reception mutually different step surface 123s1,123s2
Real-time detection is in chemical-mechanical polishing process as caused by the abrasion of polishing pad 11 in two same output signals Sos1, Sos2
Amount of thickness reduction.
On the other hand, as shown in fig. 7, being formed in the First terrace 123s1 of the bottom surface of the first component 1231 of retaining ring 123
It can be formed as the rough pattern being mutually inserted with second step face 123s2.It can be in specified position thus, it is possible to obtain
It prevents from being staggered and more accurate and the advantages of easily combine the first component 1231 and second component 1232.
Above-mentioned eddy current sensor 50 has the sensor coil (not shown) of the hollow screw shape in winding n times, thus from
Control unit 90 receives alternating current to apply input signal Si (Si1, Si2, Si3) from sensor coil in the form of magnetic flux, and to
Electric conductor applies vortex, change as a result, in the thickness of electric conductor or between electric conductor at a distance from the case where changing
Under, receive resonant frequency caused by the vortex occurred in electric conductor or resultant impedance as output signal So (Soi, So2,
So3), to be used in the thickness change for detecting electric conductor from the variation of output signal So or the distance until electric conductor.
An embodiment according to the present invention, eddy current sensor 50 generate vortex in the external position Pe of rubbing head 100 to connect
Output signal is received, generates vortex in the lower position Pr of the First terrace 123s1 of retaining ring 123 to receive the second-one output letter
Number So21 (for convenience, being labeled as appended drawing reference 51 in the accompanying drawings), in the downside position of the second step face 123s2 of retaining ring 123
It sets Pr and generates vortex to receive the second-two output signal So22 (for convenience, being labeled as appended drawing reference 52 in the accompanying drawings), and
The downside Pc of the polishing layer of wafer W generates vortex to receive third output signal So3.In the accompanying drawings, although being independently arranged three
A eddy current sensor 50 (51,52,53), but thickness transducer 50 can be by that can send and receive the one of signal in three positions
A eddy current sensor is constituted.
In the case where no conductive material, output signal received by eddy current sensor 50,500 is not because synthesizing
The reduction amount of impedance and be measured as a reference value (default) or zero (0) in principle, the conductive material the case where
Under, output signal received by eddy current sensor 50,500 due to the reduction amount of resultant impedance with from a reference value or zero subtract with
The corresponding size output of the reduction amount of resultant impedance.In the accompanying drawings, it is illustrated so that a reference value is zero as an example.Eddy current sensor
50,500 output valve can be shown as voltage (voltage).
In a period of executing chemical-mechanical polishing process, above-mentioned control unit 90 applies alternating current to eddy current sensor 50
Stream to make high-frequency current pass through sensor coil to flow, and is fallen into a trap from the wafer polishing layer Le received output signal So of institute
Calculate the thickness of wafer polishing layer Le.
For this purpose, firstly, as shown in Figure 6 a, the shape of wafer W is not arranged in the baseplate underside of the diaphragm 121 of rubbing head 100
Under state, thickness transducer 50 receives output signal Soi (S110) by the downside of rubbing head 100.
Here, in a period of by rubbing head 100, since received output signal Soi does not have conductive material, whirlpool
Stream is only guided in the first component 1231 of the retaining ring 123 of rubbing head 100, and because of the reduction of the resultant impedance based on this
And the is only received in a manner of there is low value Sos1, Sos2 in each step surface 123s1,123s2 in the downside of retaining ring 123
One output signal So1.
Moreover, as shown in Figure 6 a, being received in the region in addition to the lower position Pr except retaining ring 123 by thickness transducer 50
Output signal Soi in the form of flat, and occur by peripheral structure element with thickness transducer 50 and in addition to this it
Between combination come the deviant off that presents (attached drawing is the case where deviant is 0).Before executing chemical-mechanical polishing process,
The the first output signal So1 obtained in the downside of retaining ring 123 by thickness transducer 50 is transmitted to control unit 90.
Before executing chemical-mechanical polishing process, if defeated by the reception first of thickness transducer 50 in the downside of retaining ring 123
Signal So1 out then as shown in Figure 6 b executes chemistry in the state of the downside for the diaphragm 121 for making wafer W be located at rubbing head 100
Mechanical polishing process (S120).
In a period of executing chemical-mechanical polishing process, multiple thickness transducers 50,500 or positioned at retaining ring 123
The downside of First terrace 123s1 and second step face 123s2 or the First terrace 123s1 and second for passing through retaining ring 123
The downside of step surface 123s2, or the downside positioned at the downside of wafer W or Jing Guo wafer W.In this course, such as Fig. 6 c institute
Show, thickness transducer 50,500 receives the second output signal So2 in the downside of retaining ring 123, receives in the downside of wafer W comprising the
The output signal Soii (S130, S140) of three output signal So3.It is transmitted to control unit 90 received by thickness transducer 50,500
Second output signal So2 and third output signal So3.
Here, retaining ring 123 can be located to detect thickness transducer 50 by additional sensor (for example, encoder)
The downside Pc of downside Pr or chip can also detect detection from the form of waveform received by thickness transducer 50.
On the other hand, since the first output signal So1 and the second output signal So2 that transmit to control unit 90 are reflected in shape
At the changing value of the resultant impedance of the vortex of First terrace 123s1 and second step face 123s2 in retaining ring 123, and
The thickness of one component 1231 is formed as the decades of times of the polishing layer Le of wafer W to thousands of times, therefore, reflection thickness transducer 50 to
Distance change value until each step surface 123s1,123s2.In other words, to control unit 90 transmit the first output signal So1 and
Second output signal So2 has until from thickness transducer 50 to each step surface 123s1,123s2 in a manner of there are the time difference
Range information, and grasp and have difference in height between First terrace 123s1 and second step face 123s2, therefore, can be with
Thus the change value of thickness of polishing pad 11 is grasped.
More specifically, during executing chemical-mechanical polishing process, the thickness due to caused by the abrasion as polishing pad 11
Degree is reduced, in the lower position Pr of retaining ring 123, the value of the second-one output signal So21 and the second-two output signal So22's
Difference occurs for value.In other words, during executing chemical-mechanical polishing process (S120), if to the downside for being located at retaining ring 123
Or the thickness transducer 50 of the downside by retaining ring 123 is (hereinafter, be respectively designated as 51 He of first thickness sensor for convenience
Second thickness sensor 52) apply alternating current, then from first thickness sensor 51 and second thickness in a manner of generating vortex
Sensor 52 applies First terrace 123s1 from magnetic flux to the retaining ring 123 formed by conductive material and second step face 123s2
The input signal Si (S131) of form.
At this point, since the second component 1232 of the retaining ring 123 of rubbing head 100 is formed by non-conducting materials such as plastics, resins,
Therefore, because the magnetic flux applied from first thickness sensor 51 and second thickness sensor 52 is vortexed without generating.And conduct
Instead of, penetrate through second component 1232 magnetic flux (magnetic flux) the first component 1231 First terrace 123s1 and
Vortex is generated in the 123s2 of second step face.
Moreover, as wafer W polished pad 11 is pressurizeed and is polished, and chemical-mechanical polishing process is carried out, but in crystalline substance
In the chemical-mechanical polishing process of piece W there is a phenomenon where the surface of polishing pad 11 is also worn and it is gradually thinning.Therefore, it is executing
It, will be in First terrace 123s1 and in first thickness sensor 51 and second thickness sensor 52 while step S131
The resonant frequency in vortex or resultant impedance comprising reactive component and resistance components that two step surface 123s2 occur are as the
Two-one output signal So21 and the second-two output signal So22 receive to be vortexed sensor 51,52, and control unit 90 receives
Output signal So21, So22 that reducer coupling receives is come caused by calculating the abrasion as polishing pad 11 from output signal So21, So22
The amount of movement of First terrace 123s1 and second step face 123s2.At this point, due to having grasped First terrace 123s1 and
The height tolerance y of two step surface 123s2, thus real-time detection can be polished from received output signal So21, So22
The abrasion loss (32) of pad 11.
Therefore, the present invention can obtain following the utility model has the advantages that control unit 90 can each step by S132 from retaining ring 123
Output signal So31, So22 of face 123s1,123s2 obtain the change value of thickness of polishing pad 11 in real time, thus export from third
Reflect the thickness change of the polishing pad 11 obtained in S132 in the thickness value of the wafer polishing layer Le obtained in signal So3
Value, so as to obtain the thickness value (S133) of accurate wafer polishing layer Le in real time.
Hereinafter, being described in detail to preferred implementation form of the invention.
As shown in fig 6d, in the first time point as the time point before executing chemical-mechanical polishing process, will not
Wafer W is installed on the state of rubbing head 100, output signal Soi is received in thickness transducer 50, to be existed by thickness transducer 50
The first output signal So1 is received in the downside of retaining ring 123, and is executed in the state for being located at the downside of rubbing head 100 with wafer W
Second time point of chemical-mechanical polishing process receives the second output signal in the downside of retaining ring 123 by thickness transducer 50
So2, to transmit the first output signal So1 and the second output signal So2 to control unit 90.
Compared with the first time point before executing chemical-mechanical polishing process, by being carrying out chemical-mechanical polishing process
The second time point until polishing pad 11 abrasion loss caused by change value of thickness be reflected in the first output signal So1 and second
The ratio of output signal So2, therefore, in the ratio of the second time point generation and the first output signal So1 and the second output signal So2
Rate is matchingly to the corrected correction signal So3c of third output signal So3 received from the polishing layer Le of chip
(S150)。
That is, as shown in fig 6d, it is (empty compared to the output signal measured in first time point by thickness transducer 50
Line) Soi the first output signal (dotted line) So1, the output signal measured by thickness transducer 50 at the second time point is (real
Line) Soii with the abrasion of polishing pad 11 causes the interval between thickness transducer 50 and the first component 1231 close, thus
Obtain lower second output signal (solid line) So2.This means that being thrown during executing chemical-mechanical polishing process
The abrasion of light pad 11, thus compared to the first time point before the chemical-mechanical polishing process initial as execution by each
Multiple values X1i, X2i of the received first output signal So1 of terrace 123s1,123s2 are executing chemical-mechanical polishing process
Arbitrary second time point, the thickness tp of polishing pad 11 in received second output signal of each step surface 123s1,123s2 institute
Ratio X1i/X1, X2i/X2 of multiple values X1, X2 of So2 is correspondingly reduced.
Therefore, the third output signal So3 that control unit 90 will obtain in the polishing layer Le of chip, step surface with to
Ratio X1i/X1, X2i/X2 of the second output signal So2 of one output signal So1 is correspondingly reflected.In other words, in order to
Reflection is allowed to have second obtained in the second time point of the downside in retaining ring 123 of the thickness change value information of polishing pad 11 output
Signal So2 becomes the condition (that is, the condition that can never cause the thickness change of polishing pad 11) for becoming the first output signal So1,
It generates with condition identical with the condition that the second output signal So2 is matched with the first output signal So1 to third output signal
The corrected correction signal So3c of So3, from the thickness change parameter of third output signal So3 reflection polishing pad 11, thus raw
The correction signal So3c of the thickness change of wafer polishing layer is only presented at simple ground.
For example, can by third output signal So3 multiplied by the second output signal So2's and the first output signal So1
Ratio (in X1i/X1 and X2i/X2 any one) Lai Zhihang correction signal So3c is changed, it can also be according to chemically mechanical polishing
The height etc. of step surface 123s1,123s2 of the first component 1231 of conditions environmental and retaining ring 123 are come multiplied by above-mentioned variation ratio
Thus 0.5 times to 1.5 times of (in X1i/X1 and X2i/X2 any one) executes correction signal So3c.Alternatively, by
Subtracted in three output signal So3 the second output signal So2 and the first output signal So1 variation difference X1i-X1, X2i-X2 or
0.5 times of the variation difference executes correction signal So3c to 1.5 times.
As a result, as shown in fig 6e, due to reflecting there is polishing from the correction signal So3c of third output signal So3 correction 88
The change value of thickness of pad 11, therefore, control unit 90 calculate the thickness (S160) of the polishing layer Le of chip from correction signal So3c,
It is hereby achieved that following excellent effect, that is, be accumulate to by from the first time point for starting to execute chemical-mechanical polishing process
The amounts of thickness variation of polishing pad until the second time point for being carrying out chemical-mechanical polishing process is come with simple calculations side
Formula disposably accurately obtains the thickness for the pure wafer polishing layer that do not distort.
On the other hand, it can freely specify when acquisition is corrected 88 to third output signal So1 as benchmark
The first time point and the second time point of first output signal So1 and the second output signal So2.For example, due to first time point
To execute the time point before chemical-mechanical polishing process, it is therefore preferred that anti-in the THICKNESS CALCULATION of the polishing layer Le of chip
The cumulative attrition amount (amounts of thickness variation) of polishing pad 11 is reflected, still, due to executing the moment of chemical-mechanical polishing process by thickness
The degree received output signal So of sensor 50 may be likely to occur variation because of surrounding enviroment such as deviants, therefore, first
Time point can be designated as executing the initial stage of chemical-mechanical polishing process (for example, starting to execute 10 seconds of polishing process
Within).
Moreover, time point when first time point can be designated as being carrying out chemical-mechanical polishing process, and at this
In the case of kind, since the difference (together including ratio and difference) of the first output signal So1 and the second output signal So2 has
Execute the mill of the polishing pad 11 in the specified time (difference of first time point and the second time point) of chemical-mechanical polishing process
Damage amount information therefore can be in a period of executing chemical-mechanical polishing process for monitoring the change of the abrasion loss of polishing pad 11
Change.
The chemical mechanical polishing apparatus 9 of the invention constituted in the manner can obtain it is following the utility model has the advantages that
Reflection have chip polishing layer Le thickness tp information third output signal So3 in reflect from start execute chemical machinery
The time point of polishing process be accumulate to the second time point for being carrying out chemical-mechanical polishing process until polishing pad 11 thickness
Variable quantity, Lai Shengcheng correction signal So3c are spent, and obtains from correction signal So3c the thickness of the polishing layer Le of chip, thus right
The thickness tp of the polishing layer Le of chip is corrected, and may finally accurately be obtained not by the thickness change of polishing pad 11
The thickness value for the pure wafer polishing layer distorted.
The present invention can detect the polishing end time point of chip accurately accurately to control the polishing of chip thickness as a result,
Degree.
More than, although preferred embodiments of the present invention have been disclosed for illustrative in illustrative mode, the scope of the present invention
It is not limited to this specific embodiment, but change appropriate can be carried out in scope documented by scope of patent protection
More.
Claims (23)
1. a kind of chemical mechanical polishing apparatus is the chemical mechanical polishing apparatus that the chip of polishing layer is formed by conductive material,
It is characterized in that, comprising:
Plate, the upper surface polished pad covering of above-mentioned polishing plate are polished, and carries out rotation；
Rubbing head, above-mentioned rubbing head have retaining ring, in chemical-mechanical polishing process, the plate table of above-mentioned rubbing head and above-mentioned chip
Face is in contact to pressurize, and above-mentioned retaining ring includes the first component and second component, and the above-mentioned first component is formed by conductive material,
And there is First terrace and the second step face of mutually different height along formation around above-mentioned chip, above-mentioned second
Part is laminated in the downside of the above-mentioned first component by non-conductive component, and in above-mentioned chemical-mechanical polishing process with it is above-mentioned
Polishing pad is in contact；
Thickness transducer, Xiang Shangshu retaining ring and above-mentioned chip apply eddy current signal, to obtain the thickness information of above-mentioned chip；And
Control unit comes from above-mentioned First terrace from least part thickness transducer institute in above-mentioned thickness transducer is received
With second output signal in above-mentioned second step face, the thickness information of above-mentioned polishing pad is obtained, and passes through above-mentioned thickness transducer
In at least part thickness transducer obtain the third output signal of the polishing layer from above-mentioned chip, and it is defeated from above-mentioned third
Reflect the thickness information of above-mentioned polishing pad in signal out, to obtain the thickness of above-mentioned wafer polishing layer,
In first time point, above-mentioned control unit is received from above-mentioned thickness transducer from above-mentioned First terrace and second above-mentioned
First output signal of terrace, at the second time point for being later than above-mentioned first time point, above-mentioned control unit is sensed from above-mentioned thickness
Device receives the second output signal from above-mentioned First terrace and above-mentioned second step face and from above-mentioned wafer polishing layer
Third output signal, and it is defeated according to the variable quantity of above-mentioned first output signal and above-mentioned second output signal to correct above-mentioned third
Signal out, to obtain the thickness of above-mentioned chip.
2. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned first time point is the time point before executing above-mentioned chemical-mechanical polishing process, and above-mentioned second time point is
Execute the time point of chemical-mechanical polishing process.
3. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned first time point and above-mentioned second time point are the time point for being carrying out chemical-mechanical polishing process.
4. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned control unit detects the thickness change of above-mentioned polishing pad from above-mentioned first output signal and above-mentioned second output signal.
5. chemical mechanical polishing apparatus according to claim 4, which is characterized in that
Above-mentioned control unit detects the polishing layer thickness variation of above-mentioned chip from above-mentioned third output signal, it is contemplated that above-mentioned polishing pad
Amounts of thickness variation, the polishing layer thickness of the above-mentioned chip obtained from above-mentioned third output signal is corrected, on obtaining
State the thickness of chip.
6. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned control unit is come in a manner of reducing the deviation of above-mentioned second output signal and above-mentioned first output signal to above-mentioned
Two output signals are corrected, and ratio carries out above-mentioned third output signal in the correcting value of above-mentioned second output signal
Correction, thus calculates correction signal, and the thickness of above-mentioned chip is obtained from above-mentioned correction signal.
7. chemical mechanical polishing apparatus according to claim 6, which is characterized in that
Above-mentioned correction signal passes through at 0.5 times to 1.5 times of the ratio between above-mentioned first output signal and above-mentioned second output signal
Ratio is changed to obtain multiplied by above-mentioned third output signal.
8. chemical mechanical polishing apparatus according to claim 6, which is characterized in that
Above-mentioned correction signal in above-mentioned third output signal by subtracting as above-mentioned first output signal and above-mentioned second defeated
0.5 times to 1.5 times of variation difference of the difference of signal obtains out.
9. chemical mechanical polishing apparatus according to claim 1, which is characterized in that
Above-mentioned First terrace and above-mentioned second step face are respectively formed as horizontal flat surface.
10. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
Above-mentioned First terrace and the height tolerance in above-mentioned second step face are kept constant in whole circumference direction.
11. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
Above-mentioned First terrace and above-mentioned second step face respectively in a ring, and are distributed in from center to radial direction different
Length.
12. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
The above-mentioned first component is formed by metal material, and above-mentioned second component is formed by one of resin, plastics material.
13. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
The configuration of above-mentioned thickness transducer there are three more than, for receive respectively from above-mentioned chip, above-mentioned First terrace and
State the output signal in second step face.
14. chemical mechanical polishing apparatus according to claim 9, which is characterized in that
The above-mentioned first component is in a ring.
15. chemical mechanical polishing apparatus according to claim 14, which is characterized in that
Above-mentioned second component is in a ring.
16. a kind of cmp method is the cmp method that the chip of polishing layer is formed by conductive material,
It is characterized in that, comprising:
Wafer polishing step makes above-mentioned chip be located at the downside of the rubbing head with retaining ring, in CMP process, with
The state that the plate surface of above-mentioned chip is in contact with above-mentioned rubbing head is pressurizeed, and executes the polishing of above-mentioned chip, above-mentioned gear
Circle includes the first component and second component, and the above-mentioned first component is formed by conductive material, and is formed around above-mentioned chip
First terrace and second step face with mutually different height, above-mentioned second component the downside of the above-mentioned first component by
Non-conductive component is laminated, and is in contact in above-mentioned chemical-mechanical polishing process with above-mentioned polishing pad；
Wafer thickness information receiving step applies eddy current signal from thickness transducer to above-mentioned retaining ring and above-mentioned chip, to obtain
The thickness information of above-mentioned chip；
Polishing layer thickness obtaining step comes from above-mentioned First terrace and above-mentioned second received by the above-mentioned thickness transducer
Second output signal of step surface obtains the thickness information of above-mentioned polishing pad, and obtains that above-mentioned thickness transducer institute is received to be come from
The third output signal of the polishing layer of above-mentioned chip, and reflect from above-mentioned third output signal the thickness information of above-mentioned polishing pad
Obtain the thickness of above-mentioned wafer polishing layer,
In above-mentioned polishing layer thickness obtaining step, in first time point, is received from above-mentioned thickness transducer and come from above-mentioned first
First output signal of step surface and above-mentioned second step face, at the second time point for being later than above-mentioned first time point, from above-mentioned
Thickness transducer receives the second output signal from above-mentioned First terrace and above-mentioned second step face and comes from above-mentioned chip
Third output signal in polishing layer, and corrected according to the variable quantity of above-mentioned first output signal and above-mentioned second output signal
Above-mentioned third output signal, to obtain the thickness of above-mentioned chip.
17. cmp method according to claim 16, which is characterized in that
Above-mentioned first time point is the time point before executing above-mentioned chemical-mechanical polishing process, and above-mentioned second time point is
Execute the time point of chemical-mechanical polishing process.
18. cmp method according to claim 16, which is characterized in that
Above-mentioned first time point and above-mentioned second time point are the time point for being carrying out chemical-mechanical polishing process.
19. cmp method according to claim 16, which is characterized in that
In above-mentioned polishing layer thickness obtaining step, to reduce above-mentioned second output signal value and above-mentioned first output signal value
The mode of deviation is corrected above-mentioned second output signal, and ratio is in the correcting value of above-mentioned second output signal, right
Above-mentioned third output signal is corrected, and thus calculates correction signal, and the thickness of above-mentioned chip is obtained from above-mentioned correction signal.
20. cmp method according to claim 19, which is characterized in that
Above-mentioned correction signal passes through at 0.5 times to 1.5 times of the ratio between above-mentioned first output signal and above-mentioned second output signal
Ratio is changed to obtain multiplied by above-mentioned third output signal.
21. cmp method according to claim 19, which is characterized in that
Above-mentioned correction signal in above-mentioned third output signal by subtracting as above-mentioned first output signal and above-mentioned second defeated
0.5 times to 1.5 times of variation difference of the difference of signal obtains out.
22. cmp method described in any one of 6 to 21 according to claim 1, which is characterized in that
The configuration of above-mentioned thickness transducer there are three more than, for receive respectively from above-mentioned chip, above-mentioned First terrace and
State the output signal in second step face.
23. cmp method described in any one of 6 to 21 according to claim 1, which is characterized in that
Above-mentioned thickness transducer is received by a sensor and comes from above-mentioned chip, above-mentioned First terrace and above-mentioned second step face
All output signals.
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|---|---|---|---|---|
| JPH10202520A (en) * | 1997-01-20 | 1998-08-04 | Tokyo Seimitsu Co Ltd | Wafer thickness processing quantity measuring device |
| JP2003273047A (en) * | 2002-03-18 | 2003-09-26 | Semiconductor Leading Edge Technologies Inc | Polishing device and polishing method |
| KR20080046556A (en) * | 2006-11-22 | 2008-05-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly |
| JP2012506152A (en) * | 2008-10-16 | 2012-03-08 | アプライド マテリアルズ インコーポレイテッド | Eddy current gain compensation |
| CN104511838A (en) * | 2013-10-07 | 2015-04-15 | 株式会社荏原制作所 | Polishing method |
| KR101561815B1 (en) * | 2014-06-23 | 2015-10-20 | 주식회사 케이씨텍 | Method of measuring wafer metal layer thickness in chemical mechanical polishing process and retainer ring of carrier head used therein |
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| JP2008177248A (en) * | 2007-01-16 | 2008-07-31 | Tokyo Seimitsu Co Ltd | Retainer ring for polishing head |
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| JPH10202520A (en) * | 1997-01-20 | 1998-08-04 | Tokyo Seimitsu Co Ltd | Wafer thickness processing quantity measuring device |
| JP2003273047A (en) * | 2002-03-18 | 2003-09-26 | Semiconductor Leading Edge Technologies Inc | Polishing device and polishing method |
| KR20080046556A (en) * | 2006-11-22 | 2008-05-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly |
| JP2012506152A (en) * | 2008-10-16 | 2012-03-08 | アプライド マテリアルズ インコーポレイテッド | Eddy current gain compensation |
| CN104511838A (en) * | 2013-10-07 | 2015-04-15 | 株式会社荏原制作所 | Polishing method |
| KR101561815B1 (en) * | 2014-06-23 | 2015-10-20 | 주식회사 케이씨텍 | Method of measuring wafer metal layer thickness in chemical mechanical polishing process and retainer ring of carrier head used therein |
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