CN106452608B - The RF transceiver for wireless human body local area network realized using notch filter - Google Patents
The RF transceiver for wireless human body local area network realized using notch filter Download PDFInfo
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- CN106452608B CN106452608B CN201610932454.1A CN201610932454A CN106452608B CN 106452608 B CN106452608 B CN 106452608B CN 201610932454 A CN201610932454 A CN 201610932454A CN 106452608 B CN106452608 B CN 106452608B
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B13/00—Transmission systems characterised by the medium used for transmission, not provided for in groups H04B3/00 - H04B11/00
- H04B13/005—Transmission systems in which the medium consists of the human body
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W84/00—Network topologies
- H04W84/02—Hierarchically pre-organised networks, e.g. paging networks, cellular networks, WLAN [Wireless Local Area Network] or WLL [Wireless Local Loop]
- H04W84/10—Small scale networks; Flat hierarchical networks
- H04W84/12—WLAN [Wireless Local Area Networks]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
A kind of RF transceiver for wireless human body local area network realized using notch filter, antenna connects Transmit Receive Unit by matching network, the output of Transmit Receive Unit connects digital processing element with feedback reception end, Transmit Receive Unit specifically includes: the rectification circuit of the signal transmitted by matching network receiving antenna and with the low-noise amplifier of notch filter, the backscattered modulation module of aerial signal is sent to by matching network, the output of rectification circuit connects the digital baseband in digital processing element for powering by Voltage stabilizing module, the output of low-noise amplifier with notch filter passes sequentially through energy detection module, variable gain amplifier, integrator connects the receiving module for being used to carry out coding and decoding processing in digital processing element with comparator, the input terminal of backscattered modulation module passes through The transmitting terminal of digital pulse generator connection digital processing element.The present invention has the characteristics that passive, inexpensive, low-power consumption, fully integrated.
Description
Technical field
The present invention relates to a kind of RF transceivers.More particularly to it is a kind of using notch filter realize for no informant
The RF transceiver of body local area network.
Background technique
Wireless human body local area network (WBAN) is initially believed to be that reply health expenditure increases severely and medical services provide
A solution of quotient's scarcity, in recent years, the appearance of WBAN technology solve the problems, such as the monitoring of patient from far-off regions.Reduce doctor
The raising of the demand and people of cost to disease prevention and early stage disease detection attention rate is treated, can be come by WBAN real
It is existing.In addition, wireless human body local area network can also be applied to consumer electronics, amusement, movement, ambient intelligence, herding, military affairs and peace
In full field, using with it is wearable, implantable, can invade that equipment is associated, the life more intelligence side of consumer can be made
Just.
In recent years, it has been defined applied to the IEEE802.15.6 standard of WBAN communication system, and has occurred one
Report about the WBAN rf chip of various Application in Sensing a bit.The important feature of these WBAN RF transceivers include with
Other modules are integrated, low-power consumption, low cost.
For radio frequency process, with the continuous reduction of characteristic size, the spy of deep-submicron CMOS process and its MOSFET
Sign frequency have reached 200GHz or more, make it possible using CMOS technology realize ghz band high frequency analog circuits.?
Numerous works such as silicon CMOS, Bi-CMOS, bipolar process, Ga-As MESFET, heterojunction bipolar transistor (HBT), Ge-Si device
In skill, although the high frequency performance and noiseproof feature of silicon CMOS be not it is best, due to its technique is the most mature, cost is minimum,
Power consumption is minimum, using also the most extensively, therefore CMOS RF IC is the trend developed in recent years.With radio frequency identification skill
The researcher of the development of art, countries in the world has conducted extensive research in terms of the design of CMOS RF IC and production,
The performance of CMOS RF IC is continuously improved.
Although having had relevant report for WBAN RF transceiver field, due to working frequently in RF transceiver
Complex jamming near rate by indiscriminate reception and is difficult to filter out, this largely reduces the sensitivity of transceiver
Degree, or even transceiver can be made to be saturated.It is well known that in environment around us, WCDMA and 2.4GHz ISM signal pair
The interference of 3~5GHz transceiver is very significant.Up to the present, in known document, in the given bit error rate
And there is no carry out elaboration deep in detail for the improvement in terms of the system performances such as susceptibility in an interference situation.
Summary of the invention
The technical problem to be solved by the invention is to provide it is a kind of use standard CMOS process, have it is passive, inexpensive,
Low-power consumption, the fully integrated RF transceiver for wireless human body local area network realized using notch filter.
The technical scheme adopted by the invention is that: it is a kind of using notch filter realize for wireless human body local area network
RF transceiver has antenna and matching network for being communicated with external equipment, and for carrying out to received signal
The digital processing element of processing is coded and decoded, the antenna connects Transmit Receive Unit, the radio frequency by matching network
The output of Transmit-Receive Unit connects digital processing element with feedback reception end, and the Transmit Receive Unit has specifically included: passing through
The rectification circuit and low-noise amplifier with notch filter of the signal of matching network receiving antenna transmission, and by
Distribution network is sent to the backscattered modulation module of aerial signal, wherein the output of the rectification circuit passes through Voltage stabilizing module
Digital baseband in connection digital processing element for powering, the output of the low-noise amplifier with notch filter according to
Secondary connected in digital processing element by energy detection module, variable gain amplifier, integrator and comparator is used to carry out
The receiving module of processing is coded and decoded, the input terminal of the backscattered modulation module passes through digital pulse generator connection number
The transmitting terminal of word processing unit.
The low-noise amplifier with notch filter includes: the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd MOS
The source electrode of pipe and the 4th metal-oxide-semiconductor, first metal-oxide-semiconductor is grounded, and the source electrode of drain electrode and third metal-oxide-semiconductor connects notch filter jointly
One end, the grid of first metal-oxide-semiconductor pass through respectively the 5th resistance connection low noise bias voltage, by first capacitor connection
Transmit Receive Unit output end and the drain electrode that the second capacitor connects third metal-oxide-semiconductor with 3rd resistor is passed sequentially through, described second
The source electrode of metal-oxide-semiconductor is grounded, and the source electrode of drain electrode and the 4th metal-oxide-semiconductor connects the other end of notch filter, second metal-oxide-semiconductor jointly
Grid pass through respectively the 6th resistance connection low noise bias voltage, by the 4th capacitance connection Transmit Receive Unit output end with
And pass sequentially through the drain electrode of third capacitor and the 4th resistance the 4th metal-oxide-semiconductor of connection, the grid of the third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor
Extremely jointly connection direct current gate bias voltage, the drain electrode of the third metal-oxide-semiconductor be separately connected energy detection module input terminal and
Power supply is connected by first resistor, the drain electrode of the 4th metal-oxide-semiconductor is separately connected the input terminal of energy detection module and passes through
Second resistance connects power supply.
The notch filter includes the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor, wherein the 5th MOS
The source electrode of pipe is grounded, and grid connects filter bias voltage input, and drain electrode is separately connected the source electrode and the 7th metal-oxide-semiconductor of the 6th metal-oxide-semiconductor
Source electrode, the grid of the 6th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, and the grid of the 7th metal-oxide-semiconductor connects the 6th MOS
The drain electrode of pipe, the drain electrode of the 6th metal-oxide-semiconductor respectively by the drain electrode of the first metal-oxide-semiconductor in capacitance connection low-noise amplifier,
Power supply and the drain electrode by the 7th metal-oxide-semiconductor of the 5th capacitance connection are connected, the drain electrode of the 7th metal-oxide-semiconductor also passes through one respectively
The drain electrode of the second metal-oxide-semiconductor in capacitance connection low-noise amplifier and connection power supply.
The antenna is on-chip antenna.
The RF transceiver for wireless human body local area network realized using notch filter of the invention, using standard
CMOS technology has passive, inexpensive, low-power consumption, fully integrated, and effectively overcomes environmental disturbances, has good application
Prospect.The invention has the following advantages that
1, using the LNA of active notch filter, 2.4GHz in the interference near assigned frequency, such as life can be eliminated
The interference of signal；
2, power consumption and complexity are effectively reduced, Receiving is detected using incoherent energy, it is local to can be avoided addition
Big power problems caused by oscillator and carrier synchronization module；
3, using on-chip antenna, fully integrated transceiver is really realized, on the basis of cost can be greatly reduced, makes this
RF transceiver using more flexible；
4, the RF transceiver is passive, receives energy using antenna, powers for whole system.
Detailed description of the invention
Fig. 1 is the composition frame for the RF transceiver for wireless human body local area network that the present invention is realized using notch filter
Figure；
Fig. 2 is the amplifier circuit in low noise schematic diagram that notch filter is had in the present invention；
Fig. 3 is the circuit diagram of notch filter in the present invention；
Fig. 4 is the structural schematic diagram of antenna in the present invention；
Fig. 5 is the equivalent circuit diagram of antenna.
In figure
1: antenna 2: matching network
3: Transmit Receive Unit 4: digital processing element
31: rectification circuit 32: Voltage stabilizing module
33: low-noise amplifier 34: energy detection module
35: variable gain amplifier 36: integrator
37: comparator 38: notch filter
39: backscattered modulation module 310: digital pulse generator
41: transmitting terminal 42: digital baseband
43: receiving module
Specific embodiment
Wireless human body local area network is used for using what notch filter was realized to of the invention below with reference to embodiment and attached drawing
RF transceiver be described in detail.
As shown in Figure 1, the RF transceiver for wireless human body local area network of the invention realized using notch filter,
There are the antenna 1 and matching network 2 for being communicated with external equipment, and for coding and decoding to received signal
The digital processing element 4 of processing, the antenna 1 are on-chip antenna.The antenna 1 connects radio frequency by matching network 2 and receives
Bill member 3, the output of the Transmit Receive Unit 3 connect digital processing element 4, the radio-frequency receiving-transmitting list with feedback reception end
Member 3 specifically includes: by the rectification circuit 31 of the signal of 2 receiving antenna 1 of matching network transmission and with notch filter 38
Low-noise amplifier 33, and be sent to by matching network 2 the backscattered modulation module 39 of 1 signal of antenna, wherein institute
The output for the rectification circuit 31 stated connects the digital baseband 42 in digital processing element 4 by Voltage stabilizing module 32 and is used to power, institute
The output for stating the low-noise amplifier 33 with notch filter 38 passes sequentially through energy detection module 34, variable gain amplifier
35, integrator 36 and comparator 37 connect the receiving module 43 for being used to carry out coding and decoding processing in digital processing element 4,
The input terminal of the backscattered modulation module 39 connects the transmitting terminal of digital processing element 4 by digital pulse generator 310
41。
After the utilization matching network 2 of antenna 1 is to the good reception of signal, the low noise of notch filter 38 is had by one
Acoustic amplifier 33 carries out interference and preliminary amplification, for energy detection module 34, envelope detector (ENV
Detector one) is equivalent to from mixing gilbert mixer, and output loading is a RC low-pass filter in parallel.It connects
The envelope signal received amplifies after extracting by variable gain amplifier (VGA) 35.Energy detection module 34 determines minimum
Detectable impulse amplitude, the susceptibility of the receiver also strong performance by energy detection module 34.
Variable gain amplifier (VGA) 35 is bigger in order to obtain gain and good reception dynamic range.Integral
Single order operation transconductance amplifier is contained in device (Int.) 36, by integrator 36, the noise of coarse confusion can be made to smooth out,
These noises will finally be eliminated by comparing device (Comp.) 37.Comparator 37 is the clipping of a difference as last single order
Amplifier, envelope signal are connected to the positive input terminal of comparator, and trimmed threshold voltage signal is biased in negative input end.Because than
Gain compared with device 37 be it is very high, its output signal is similar to a continuous digital pulse signal.
After digital processing by digital processing element 4, generates control signal and control backscattered modulation module 39, borrow
The transmission of signal is realized by antenna.
As shown in Fig. 2, the low-noise amplifier 33 with notch filter 38 includes: the first metal-oxide-semiconductor M1,
Two metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4, the source electrode ground connection of the first metal-oxide-semiconductor M1, drain electrode and third metal-oxide-semiconductor
The source electrode of M3 connects one end of notch filter 38 jointly, and the grid of the first metal-oxide-semiconductor M1 passes through the 5th resistance R5 company respectively
It connects low noise bias voltage, by 3 output end of first capacitor C1 connection Transmit Receive Unit and pass sequentially through the second capacitor C2
The drain electrode of third metal-oxide-semiconductor M3, the source electrode ground connection of the second metal-oxide-semiconductor M2, drain electrode and the 4th metal-oxide-semiconductor M4 are connected with 3rd resistor R3
Source electrode connect the other end of notch filter 38 jointly, the grid of the second metal-oxide-semiconductor M2 passes through the 6th resistance R6 company respectively
It connects low noise bias voltage, by 3 output end of the 4th capacitor C4 connection Transmit Receive Unit and pass sequentially through third capacitor C3
Connect the drain electrode of the 4th metal-oxide-semiconductor M4 with the 4th resistance R4, the grid of the third metal-oxide-semiconductor M3 and the 4th metal-oxide-semiconductor M4 connect jointly
Direct current gate bias voltage, the drain electrode of the third metal-oxide-semiconductor M3 are separately connected the input terminal of energy detection module 34 and by the
One resistance R1 connection power vd D, the drain electrode of the 4th metal-oxide-semiconductor M4 are separately connected the input terminal of energy detection module 34 and lead to
Cross second resistance R2 connection power vd D.
The low noise circuit of 33 first rank of low-noise amplifier uses single-ended total to both-end and comprising common source
The de-noising circuit that grid combine, in this case, it is possible to readily match in the frequency range more widened with radio frequency input.
As shown in figure 3, the notch filter 38 includes the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 and the 7th metal-oxide-semiconductor
M7, wherein the source electrode of the 5th metal-oxide-semiconductor M5 is grounded, and grid connects filter bias voltage input, and drain electrode is separately connected the 6th
The source electrode of the source electrode of metal-oxide-semiconductor M6 and the 7th metal-oxide-semiconductor M7, the grid of the 6th metal-oxide-semiconductor M6 connect the drain electrode of the 7th metal-oxide-semiconductor M7,
The grid of the 7th metal-oxide-semiconductor M7 connects the drain electrode of the 6th metal-oxide-semiconductor M6, and the drain electrode of the 6th metal-oxide-semiconductor M6 passes through a capacitor respectively
The drain electrode of the first metal-oxide-semiconductor M1 in low-noise amplifier 33 is connected, power vd D is connected and passes through the 5th capacitor C5 connection the 7th
The drain electrode of metal-oxide-semiconductor M7, the drain electrode of the 7th metal-oxide-semiconductor M7 also pass through the in capacitance connection low-noise amplifier 33 respectively
The drain electrode of two metal-oxide-semiconductor M2 and connection power vd D.
The notch filter 38 can adjust the resonance frequency of notch filter by adjusting the size of capacitor C.
Cross-coupled pair provides negative resistance, can eliminate the equivalent impedance generated by LC resonance circuit.Pass through optimization cross-coupled pair
Bias current and capacitor array, the Q value of available desired trap frequency and enhancing.
Fig. 4 gives the schematic diagram of on-chip antenna, since cost and size are one for limiting wireless communication system application
Principal element is not only saved most cost by the way of on-chip antenna, and strengthens system to a certain extent
Reliability, can make in wireless communication system application to the equipment of single-item grade.Due to the limitation of size, the present invention uses spiral shell
Antenna is revolved, while saving area, the maximized electric size for increasing antenna.
Fig. 5 gives the equivalent circuit diagram of on-chip antenna, R1And C1Equivalent chip internal circuits at the operating frequencies defeated
Enter impedance, the equivalent single ended antenna of other original parts, L1And R3The series inductance and resistance of representative antennas, C3Represent antenna ends
Apply to purchase and capacitor.R2And C2Represent the coupled capacitor between substrate loss and antenna and substrate.Pass through Lenz's law sense
The raw voltage obtained is V2, in order to enable antenna to obtain bigger energy when receiving signal, pass through V2To V1Between transmitting
Function, which is asked, once leads us and learns, works as R3It keeps minimum as far as possible and makes L1Meet formula (1), on-chip antenna can transmit
One maximum V1To chip internal circuits, V1Value obtained by formula (2):
Wherein Ct=C3+C2+C1, Rt=R2||R1,Qt=ω CtRt
Whole system power supply from antenna obtain external energy, by coupling obtain electric energy by rectifier,
Voltage-stablizer generates a stable operating voltage and is powered to the circuit including digital module.
Claims (3)
1. a kind of RF transceiver for wireless human body local area network realized using notch filter, is used for and external equipment
The antenna (1) and matching network (2) communicated, and for code and decode at the number of processing to received signal
It manages unit (4), which is characterized in that the antenna (1) passes through matching network (2) connection Transmit Receive Unit (3), the radio frequency
The output of Transmit-Receive Unit (3) connects digital processing element (4) with feedback reception end, and the Transmit Receive Unit (3) specifically wraps
It includes: by the rectification circuit (31) of the signal of matching network (2) receiving antenna (1) transmission and with notch filter (38)
Low-noise amplifier (33), and pass through the backscattered modulation module (39) that matching network (2) are sent to antenna (1) signal,
Wherein, the output of the rectification circuit (31) passes through the digital baseband in Voltage stabilizing module (32) connection digital processing element (4)
For circuit module (42) for powering, the output of the low-noise amplifier (33) with notch filter (38) passes sequentially through energy
Detection module (34), variable gain amplifier (35), integrator (36) and comparator (37) is measured to connect in digital processing element (4)
For carrying out the receiving module (43) of coding and decoding processing, the input terminal of the backscattered modulation module (39) passes through number
Word pulse generator (310) connects the transmitting terminal (41) of digital processing element (4)；
The low-noise amplifier (33) with notch filter (38) includes: the first metal-oxide-semiconductor (M1), the second metal-oxide-semiconductor
(M2), third metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M4), the source electrode ground connection of first metal-oxide-semiconductor (M1), drain electrode and third metal-oxide-semiconductor
(M3) source electrode connects one end of notch filter (38) jointly, and the grid of first metal-oxide-semiconductor (M1) passes through the 5th electricity respectively
Resistance (R5) connection low noise bias voltage connects Transmit Receive Unit (3) output end by first capacitor (C1) and successively leads to
The drain electrode of the second capacitor (C2) and 3rd resistor (R3) connection third metal-oxide-semiconductor (M3) is crossed, the source electrode of second metal-oxide-semiconductor (M2) connects
The source electrode of ground, drain electrode and the 4th metal-oxide-semiconductor (M4) connects the other end of notch filter (38), second metal-oxide-semiconductor (M2) jointly
Grid pass through respectively the 6th resistance (R6) connection low noise bias voltage, by the 4th capacitor (C4) connect Transmit Receive Unit
(3) output end and the drain electrode that third capacitor (C3) and the 4th resistance (R4) connect the 4th metal-oxide-semiconductor (M4) is passed sequentially through, described the
The grid of three metal-oxide-semiconductors (M3) and the 4th metal-oxide-semiconductor (M4) connects direct current gate bias voltage, the leakage of the third metal-oxide-semiconductor (M3) jointly
Pole is separately connected the input terminal of energy detection module (34) and connects power supply (VDD) by first resistor (R1), and the described 4th
The drain electrode of metal-oxide-semiconductor (M4) is separately connected the input terminal of energy detection module (34) and connects power supply by second resistance (R2)
(VDD).
2. the RF transceiver for wireless human body local area network according to claim 1 realized using notch filter,
It is characterized in that, the notch filter (38) includes the 5th metal-oxide-semiconductor (M5), the 6th metal-oxide-semiconductor (M6) and the 7th metal-oxide-semiconductor
(M7), wherein the source electrode of the 5th metal-oxide-semiconductor (M5) is grounded, and grid connects filter bias voltage input, and drain electrode is separately connected the
The grid of the source electrode of the source electrode of six metal-oxide-semiconductors (M6) and the 7th metal-oxide-semiconductor (M7), the 6th metal-oxide-semiconductor (M6) connects the 7th metal-oxide-semiconductor
(M7) drain electrode, the grid of the 7th metal-oxide-semiconductor (M7) connect the drain electrode of the 6th metal-oxide-semiconductor (M6), the drain electrode of the 6th metal-oxide-semiconductor (M6)
Respectively by the drain electrode of the first metal-oxide-semiconductor (M1) in capacitance connection low-noise amplifier (33), connection power supply (VDD) and
The drain electrode of the 7th metal-oxide-semiconductor (M7) is connected by the 5th capacitor (C5), the drain electrode of the 7th metal-oxide-semiconductor (M7) also passes through one respectively
The drain electrode and connection power supply (VDD) of the second metal-oxide-semiconductor (M2) in capacitance connection low-noise amplifier (33).
3. the RF transceiver for wireless human body local area network according to claim 1 realized using notch filter,
It is characterized in that, the antenna (1) is on-chip antenna.
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| CN113676263B (en) * | 2021-08-10 | 2022-12-16 | 华南理工大学 | Human body internal communication device and method based on ultrasonic backscattering |
| CN113938147B (en) * | 2021-09-28 | 2022-10-21 | 杭州电子科技大学 | Method for eliminating strong electromagnetic interference signal leaked by transmitter |
| CN114124203B (en) * | 2021-10-09 | 2023-11-14 | 浙江大学 | Back scattering electric signal detection transmission system |
| CN115459760B (en) * | 2022-11-09 | 2023-03-03 | 青岛泰戈菲斯海洋装备股份公司 | Frequency discrimination circuit of acoustic releaser |
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| US7949322B2 (en) * | 2007-03-09 | 2011-05-24 | Qualcomm, Incorporated | Frequency selective amplifier with wide-band impedance and noise matching |
| CN101856222A (en) * | 2010-05-21 | 2010-10-13 | 上海锐灵电子科技有限公司 | Implanted wireless electronic detection device |
| US10586412B2 (en) * | 2014-09-19 | 2020-03-10 | Texas Instruments Incorporated | Circuit and method for using capacitive touch to further secure information in RFID documents |
| CN105007636A (en) * | 2015-06-11 | 2015-10-28 | 南京邮电大学 | Wearable wireless sensing network node device oriented to athletic rehabilitation |
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