CN106450034A - A quantum dot light emitting diode device with a light trapping structure and a manufacturing method thereof - Google Patents
A quantum dot light emitting diode device with a light trapping structure and a manufacturing method thereof Download PDFInfo
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- CN106450034A CN106450034A CN201611000126.4A CN201611000126A CN106450034A CN 106450034 A CN106450034 A CN 106450034A CN 201611000126 A CN201611000126 A CN 201611000126A CN 106450034 A CN106450034 A CN 106450034A
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- light emitting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention discloses a quantum dot light emitting diode device with a light trapping structure and a manufacturing method thereof. The device sequentially comprises a substrate, a bottom electrode, a hole-injection layer, a hole-transporting layer, a quantum dot light emitting layer, an electron transport layer, an electron injection layer and a top electrode. The quantum dot light emitting diode device is characterized in that the substrate employs BZO glass with the light trapping structure. The quantum dot light emitting diode device of the invention adopts the BZO glass with the light trapping structure as the substrate, so that as for the light emitted by the quantum dot light emitting layer, the loss of light transmitted in the device under the light trapping effect of the BZO glass can be effectively reduced, thereby enhancing the light emission efficiency of the device and reducing the production cost. Compared with a traditional ITO glass substrate, the BZO glass substrate provided by the invention is lower in cost, suitable for large-area production, and is environment-friendly and without pollution.
Description
Technical field
The present invention relates to technology of quantum dots field, more particularly to a kind of light emitting diode with quantum dots device with light trapping structure
Part and preparation method thereof.
Background technology
Emergent light color saturation is had based on the quantum dot light emitting material of inorganic nano-crystal, Wavelength tunable, photic, electroluminescent
The advantage of the suitable Performance Monitor part such as quantum yield height；From the point of view of preparation technology angle, quantum dot light emitting material is suitable for
Spin coating, printing under the non-vacuum condition, printing device；Therefore, the light emitting diode with quantum dots for being prepared with quantum dot film
（QLED）Become the contenders of Display Technique of future generation.
One QLED device generally includes substrate, electrode 1, hole injection, hole transmission layer, luminescent layer, electric transmission, electricity
Sub- implanted layer and electrode 2.According to electrode 1 and the relative position of electrode 2, i.e. back electrode and top electrode, the structure of QLED can be divided
For eurymeric and two kinds of transoid device, this is only for the classification of manufacturing process, unrelated with luminous exit direction.Hole injection and
Hole transmission layer is used for providing transportable hole from dispatch from foreign news agency road direction luminescent layer, and electron transfer layer is used for providing transportable electronics.Electricity
Son-hole forms exciton in quantum dot, and exciton passes through radiation recombination output photon.
The substrate adopted by traditional quantum dot device is mostly ito glass, ito glass be in sodium calcio or silicon boryl base
On the basis of sheet glass, indium oxide layer stannum is plated using multiple methods such as sputtering, evaporations（It is commonly called as ITO）Film is manufactured
, in the case that thickness only has thousand of angstroms, Indium sesquioxide. light transmittance is higher, simultaneously because the loss of waveguiding effect, quantum dot is sent out
Light major part produced by photosphere can be predominantly absorbed in the communication process of device inside, so as to cause quantum dot light emitting device
Light extraction efficiency is low；Simultaneously because ito thin film needs rare metal In is used, environmental pollution is easily caused.
Therefore, prior art has yet to be improved and developed.
Content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of quantum dot with light trapping structure is sent out
Optical diode device and preparation method thereof, it is intended to solve existing quantum dot device light extraction efficiency low and easily cause environmental pollution
Problem.
Technical scheme is as follows：
A kind of light emitting diode with quantum dots device with light trapping structure, includes substrate, hearth electrode, hole injection layer, sky successively
Cave transport layer, quantum dot light emitting layer, electron transfer layer, electron injecting layer and top electrode, wherein, the substrate is sunken using having
The BZO glass of photo structure.
It is preferred that the described light emitting diode with quantum dots device with light trapping structure, wherein, the BZO glass includes
The BZO thin film of glass body and covering on glass body.
It is preferred that the described light emitting diode with quantum dots device with light trapping structure, wherein, the thickness of the BZO thin film
Spend for 800-2000nm.
It is preferred that the described light emitting diode with quantum dots device with light trapping structure, wherein, the side of the BZO thin film
Block resistance is 10-60 Ω/.
It is preferred that the described light emitting diode with quantum dots device with light trapping structure, wherein, the mist of the BZO thin film
Degree scope is 10-50%.
It is preferred that the described light emitting diode with quantum dots device with light trapping structure, wherein, the quantum dot light emitting layer
Material be II-VI group compound, III-V, II-V compounds of group, III-VI compound, group IV-VI compound,
One or more in I-III-VI group compound, II-IV-VI compounds of group or IV race simple substance.
A kind of preparation method of the light emitting diode with quantum dots device with light trapping structure, wherein, including step：
A, BZO thin film is prepared using Low Pressure Chemical Vapor Deposition on glass body generate BZO glass with light trapping structure
Substrate；
B, hearth electrode is prepared in BZO glass substrate surface using vacuum deposition method；
C, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electricity is sequentially depositing on hearth electrode surface
Sub- implanted layer；
D, electron injecting layer surface vacuum be deposited with top electrode.
It is preferred that the preparation method of the described light emitting diode with quantum dots device with light trapping structure, wherein, the step
Rapid A is specifically included：
A1, the glass for cleaning up is put into reative cell and is heated to 150-200oC；
A2, gaseous water and second diyl zinc are the ratio of 0.5-5 and second diyl zinc in flow-rate ratio and borine by flow-rate ratio is
The ratio of 2-6 is passed through reative cell, carries out deposition reaction；
After the completion of A3, deposition, the glass is taken out reative cell ice cooling, obtains BZO glass substrate.
It is preferred that the preparation method of the described light emitting diode with quantum dots device with light trapping structure, wherein, described anti-
Air pressure that should be indoor is 2 × 10-3-8×10-3mbar.
It is preferred that the preparation method of the described light emitting diode with quantum dots device with light trapping structure, wherein, deposition is anti-
The time that answers is 250-350s.
Beneficial effect：The present invention is had using itself and falls into light knot during light emitting diode with quantum dots device is prepared
The BZO glass of structure is used as substrate so that the light that quantum dot light emitting layer sends effectively is reduced under the light trapping effect of BZO glass
The loss that light is propagated in device inside, so as to the light extraction efficiency of boost device, reduces production cost, and with respect to traditional
Ito glass substrate, the BZO glass substrate cost that the present invention is provided is lower, be suitable for the production of high-volume large area, and environmental protection is no dirty
Dye.
Description of the drawings
Fig. 1 is a kind of structural representation of the light emitting diode with quantum dots device preferred embodiment with light trapping structure of the present invention
Figure.
Fig. 2 is the electron-microscope scanning figure of BZO thin film of the present invention.
Fig. 3 is a kind of light emitting diode with quantum dots device preparation method preferred embodiment with light trapping structure of the present invention
Flow chart.
Specific embodiment
The present invention provides a kind of light emitting diode with quantum dots device with light trapping structure and preparation method thereof, for making this
Bright purpose, technical scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that herein
Described specific embodiment is not intended to limit the present invention only in order to explain the present invention.
Fig. 1, Fig. 1 are referred to for a kind of light emitting diode with quantum dots device preferred embodiment with light trapping structure of the present invention
Structural representation, as illustrated, the embodiment of the present invention is by taking eurymeric light emitting diode with quantum dots device as an example, the device under
Supreme include substrate 10, hearth electrode 20, hole injection layer 30, hole transmission layer 40, quantum dot light emitting layer 50, electric transmission successively
Layer 60, electron injecting layer 70 and top electrode 80, wherein, the substrate 10 is using the BZO glass with light trapping structure.Described sunken
Photo structure refers to do some projections or pit on surface, to increase light path, increases the absorbtivity of photon.
Specifically, the light emitting diode with quantum dots device that the present invention is provided, substitutes traditional ito glass using BZO glass,
Substrate as the light emitting diode with quantum dots device；Further, the BZO glass includes BZO thin film and glass, such as Fig. 2
Shown, the BZO thin film has microcosmic nanometer light trapping structure, under the light trapping effect of BZO thin film, can effectively reduce quantum dot and send out
Loss of the light that photosphere 50 sends in device inside communication process, goes out light efficiency so as to improve light emitting diode with quantum dots device
Rate；
Further, the BZO glass that the present invention is adopted is with respect to traditional ito glass, and its cost is lower, suitable high-volume large area
Production；
Further, as ito glass needs to use rare metal In, the In element is less in earth content, its exploitation ratio
More difficult, and the component in BZO glass is very abundant in earth content, the very simple and environmental protection of its preparation process.
Further, in the present invention, the thickness of the BZO thin film is 800-2000nm, it is preferable that the BZO thin film
Thickness is 1800nm, and in the thickness value, the scattered color ability of BZO thin film is improved, and the light trapping effect of BZO glass substrate is more
By force, it is more beneficial for improving quantum dot to give out light the light extraction efficiency of layer 50.
Specifically, in the present invention, the square resistance of the BZO thin film is 10-60 Ω/, square resistance also known as film electricity
Resistance, is the measured value of the thermal infrared performance for the vacuum coating on the sample such as sign pellicle film, coating film on glass film layer indirectly；
Sheet resistance is only relevant with factors such as the thickness of conducting film, characterizes film layer compactness, while the transmission ability to thermal infrared spectrum is characterized,
Preferably, the square resistance of the BZO thin film is that 35 Ω/, in the value, the light trapping effect of BZO thin film is higher.
Further, in the present invention, the mist degree scope of the BZO thin film is 10-50%；Mist degree is deviateed through sample
The scatter light flux of incident light direction and the ratio of transmitted light flux, are represented with percent, generally only will deviate from incident light direction 2.5
Scatter light flux more than degree is used for calculating mist degree.Preferably, the mist degree scope of heretofore described BZO thin film is 30%, at this
During haze value, the scattered color ability of the BZO thin film is stronger.
Further, in the present invention, the thickness of the hole transmission layer and electron transfer layer is 5-100nm, it is preferable that
In the light emitting diode with quantum dots device that the present invention is provided, the thickness of the hole transmission layer 40 is set to 25nm, the electricity
The thickness of sub- transport layer 60 is set to 20nm, in the thickness value, the conduction of the hole transmission layer 40 and electron transfer layer 60
Performance is optimal, and required driving voltage is relatively low so that the luminosity of device and luminous efficiency all have a distinct increment.
Further, in the present invention, the material of described quantum dot light emitting layer is II-VI group compound, iii-v chemical combination
Thing, II-V compounds of group, III-VI compound, group IV-VI compound, I-III-VI group compound, II-IV-VI compounds of group
Or one or more in IV race simple substance；The compound includes binary compound, ternary compound and quaternary compound.
Specifically, the semi-conducting material that the quantum dot light emitting layer is used includes but is not limited to the nanometer of II-VI quasiconductor
Crystalline substance, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, three
Unit, the II-VI compound of quaternary；Nanocrystalline, such as GaP, GaAs, InP, InAs and other binary, three of Group III-V semiconductor
Unit, the III-V compound of quaternary；Described is also not limited to II-V compounds of group, III- for electroluminescent semi-conducting material
VI compound, group IV-VI compound, I-III-VI group compound, II-IV-VI compounds of group, IV race simple substance etc..
Based on the above-mentioned light emitting diode with quantum dots device with light trapping structure, the present invention also provides a kind of with sunken light knot
The preparation method of the light emitting diode with quantum dots device of structure, as shown in figure 3, wherein, including step：
S100, BZO thin film is prepared using Low Pressure Chemical Vapor Deposition on glass generate BZO glass lined with light trapping structure
Bottom；
S200, hearth electrode is prepared in BZO glass substrate surface using vacuum deposition method；
S300, hearth electrode surface be sequentially depositing hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer with
And electron injecting layer；
S400, electron injecting layer surface vacuum be deposited with top electrode.
Further, step S100 is specifically included：
S110, the glass for cleaning up is put into reative cell and is heated to 150-200oC；
S120, gaseous water and second diyl zinc are that the ratio of 0.5-5 and second diyl zinc and borine press flow-rate ratio in flow-rate ratio
Reative cell is passed through for the ratio of 2-6, carries out deposition reaction；
After the completion of S130, deposition, the glass is taken out reative cell ice cooling, obtains BZO glass substrate.
Specifically, in the present invention, the BZO thin film is to adopt low-pressure chemical vapor deposition（LPCVD）Method prepare and
Become, with second diyl zinc（DEZ）, water（H2O）And borine（B2H6）For source of the gas predecessor, due to DEZ and H2Under O normal temperature and pressure it is
Exist in liquid form, need water-bath（60oC-90oC）Passing to bubbling argon makes which be carried along into reative cell in a gaseous form, and
Gaseous DEZ and H2O easily condenses to the cold, blocks gas circuit, needs to carry out Insulation to gas circuit；
In the present invention, H2O/DEZ flow-rate ratio scope is 0.5-5, and the B of doping is typically the B through hydrogen dilution is 2%2H6, hydrogen is not
Carrier gas is only used as, also acts as gas distribution effect（Arrangement gas will be uniform for gas to chamber composition arrangement）, DEZ/B2H6Flow-rate ratio is 2-6；
By glass substrate heating temperature range 150-200oC, control BZO film thickness scope is 800-2000nm, square resistance
For 10-60 Ω/, mist degree scope 10%-50%.BZO thin film is between wavelength 400nm-1100nm, and mean transmissivity is generally higher than
85%；Reaction process is：DEZ、H2O is brought into heating substrate surface and B by argon2H6Gas one reacts and produces BZO thin film, reaction
Formula is：Zn(C2H5)2+H2O→ZnO+2C2H6, due to B2H6Molecular activity is stronger, under relatively low reaction temperature, can be decomposed to form
B3+Ion keys in ZnO so as to form the ZnO film for mixing B.
Further, in the present invention, the indoor air pressure of the reaction is 2 × 10-3-8×10-3mbar；The deposition reaction
Time be 250-350s.Preferably, the indoor air pressure of the reaction is 5 × 10-3Mbar, the time of the deposition reaction is
300s, under the numerical value, is easy to the uniform BZO thin film of forming component on a glass substrate.
Below by specific embodiment, the preparation scheme of the present invention is described further：
Embodiment 1
Using the glass substrate of area 1.1m × 1.3m × 3mm, add abluent aqueous solution spray in glass upper and lower surface, pass through
The residual liquid of high-pressure spraying ultrapure water glass surface after hairbrush is scrubbed, is entered, eventually passes 80oC air knife room is dried up, and is sent
Enter LPCVD operation；
The glass for cleaning up is heated rapidly to 155 in heating chamberoC, is sent to LPCVD reaction chamber, adjust operation pressure be 5 ×
10-3Mbar, H2O/DEZ flow-rate ratio is 1.1, DEZ/B2H6Flow-rate ratio is 480sccm, H for 3, DEZ flow2O flow
528sccm, B2H6Flow is 160sccm, sedimentation time 300s.BZO film thickness is 1820nm, and square resistance is on 16 Ω/ left side
The right side, mist degree is 25%.Deposition chambers being sent after the completion of deposition cooled down, then glass is cut, cut into required size
BZO glass.Hole injection layer, hole transmission layer, quantum dot light emitting layer and electricity are sequentially depositing on BZO glass using spin-coating method
Sub- transport layer and electron injecting layer, most use vacuum evaporation Al electrode, so as to complete the preparation of QLED device.
Embodiment 2
Using the glass substrate of area 1.1m × 1.3m × 3mm, add abluent aqueous solution spray in glass upper and lower surface, pass through
The residual liquid of high-pressure spraying ultrapure water glass surface after hairbrush is scrubbed, is entered, eventually passes 80oC air knife room is dried up, and is sent
Enter LPCVD operation；
The glass for cleaning up is heated rapidly to 175 in heating chamberoC, is sent to LPCVD reaction chamber, adjust operation pressure be 5 ×
10-3Mbar, H2O/DEZ flow-rate ratio is 1.1, DEZ/B2H6Flow-rate ratio is 480sccm, H for 3, DEZ flow2O flow
528sccm, B2H6Flow is 160sccm, sedimentation time 300s.BZO film thickness is 1900nm, and square resistance is on 13 Ω/ left side
The right side, mist degree is 29%.Deposition chambers being sent after the completion of deposition cooled down, then glass is cut, cut into required size
BZO glass.Hole injection layer, hole transmission layer, quantum dot light emitting layer and electricity are sequentially depositing on BZO glass using spin-coating method
Sub- transport layer and electron injecting layer, most use vacuum evaporation Al electrode, so as to complete the preparation of QLED device.
Embodiment 3
Using the glass substrate of area 1.1m × 1.3m × 3mm, add abluent aqueous solution spray in glass upper and lower surface, pass through
The residual liquid of high-pressure spraying ultrapure water glass surface after hairbrush is scrubbed, is entered, eventually passes 80oC air knife room is dried up, and is sent
Enter LPCVD operation；
The glass for cleaning up is heated rapidly to 195 in heating chamberoC, is sent to LPCVD reaction chamber, adjust operation pressure be 5 ×
10-3Mbar, H2O/DEZ flow-rate ratio is 1.1, DEZ/B2H6Flow-rate ratio is 480sccm, H for 3, DEZ flow2O flow
528sccm, B2H6Flow is 160sccm, sedimentation time 300s.BZO film thickness is 1950nm, and square resistance is on 12 Ω/ left side
The right side, mist degree is 35%.Deposition chambers being sent after the completion of deposition cooled down, then glass is cut, cut into required size
BZO glass.Hole injection layer, hole transmission layer, quantum dot light emitting layer and electricity are sequentially depositing on BZO glass using spin-coating method
Sub- transport layer and electron injecting layer, most use vacuum evaporation Al electrode, so as to complete the preparation of QLED device.
In sum, the present invention is had using itself and falls into light knot during light emitting diode with quantum dots device is prepared
The BZO glass of structure is used as substrate so that the light that quantum dot light emitting layer sends effectively is reduced under the light trapping effect of BZO glass
The loss that light is propagated in device inside, so as to the light extraction efficiency of boost device, reduces production cost, and with respect to traditional
Ito glass substrate, the BZO glass substrate cost that the present invention is provided is lower, be suitable for the production of high-volume large area, and environmental protection is no dirty
Dye.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, and for those of ordinary skills, can
To be improved according to the above description or convert, all these modifications and variations should all belong to the guarantor of claims of the present invention
Shield scope.
Claims (10)
1. a kind of light emitting diode with quantum dots device with light trapping structure, include successively substrate, hearth electrode, hole injection layer,
Hole transmission layer, quantum dot light emitting layer, electron transfer layer, electron injecting layer and top electrode, it is characterised in that the substrate is adopted
With the BZO glass with light trapping structure.
2. the light emitting diode with quantum dots device with light trapping structure according to claim 1, it is characterised in that described
BZO glass includes the BZO thin film of glass body and covering on glass body surface.
3. the light emitting diode with quantum dots device with light trapping structure according to claim 2, it is characterised in that described
The thickness of BZO thin film is 800-2000nm.
4. the light emitting diode with quantum dots device with light trapping structure according to claim 2, it is characterised in that described
The square resistance of BZO thin film is 10-60 Ω/.
5. the light emitting diode with quantum dots device with light trapping structure according to claim 2, it is characterised in that described
The mist degree scope of BZO thin film is 10-50%.
6. the light emitting diode with quantum dots device with light trapping structure according to claim 1, it is characterised in that the amount
The material of son point luminescent layer is II-VI group compound, III-V, II-V compounds of group, III-VI compound, IV-VI
One or more in compounds of group, I-III-VI group compound, II-IV-VI compounds of group or IV race simple substance.
7. a kind of preparation method of the light emitting diode with quantum dots device with light trapping structure, it is characterised in that including step：
A, BZO thin film is prepared using Low Pressure Chemical Vapor Deposition on glass body generate BZO glass with light trapping structure
Substrate；
B, hearth electrode is prepared in BZO glass substrate surface using vacuum deposition method；
C, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electricity is sequentially depositing on hearth electrode surface
Sub- implanted layer；
D, electron injecting layer surface vacuum be deposited with top electrode.
8. the preparation method of the light emitting diode with quantum dots device with light trapping structure according to claim 7, its feature
It is, step A is specifically included：
A1, the glass body for cleaning up is put into reative cell and is heated to 150-200oC；
A2, gaseous water and second diyl zinc are the ratio of 0.5-5 and second diyl zinc in flow-rate ratio and borine by flow-rate ratio is
The ratio of 2-6 is passed through reative cell, carries out deposition reaction；
After the completion of A3, deposition, the glass is taken out reative cell ice cooling, obtains BZO glass substrate.
9. the preparation method of the light emitting diode with quantum dots device with light trapping structure according to claim 8, its feature
It is, the indoor air pressure of the reaction is 2 × 10-3-8×10-3mbar.
10. the preparation method of the light emitting diode with quantum dots device with light trapping structure according to claim 8, its feature
It is, the time of deposition reaction is 250-350s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611000126.4A CN106450034A (en) | 2016-11-14 | 2016-11-14 | A quantum dot light emitting diode device with a light trapping structure and a manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108529894A (en) * | 2017-03-06 | 2018-09-14 | Tcl集团股份有限公司 | A kind of BZO glass and preparation method, QLED devices and preparation method |
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| CN102176471A (en) * | 2011-03-11 | 2011-09-07 | 南开大学 | Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application |
| CN102270705A (en) * | 2011-08-05 | 2011-12-07 | 保定天威集团有限公司 | Method for preparing transparent conductive electrode with dual-structure texture surface |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate and preparation method thereof and organic electroluminescent device |
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2016
- 2016-11-14 CN CN201611000126.4A patent/CN106450034A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102176471A (en) * | 2011-03-11 | 2011-09-07 | 南开大学 | Textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film and application |
| CN102270705A (en) * | 2011-08-05 | 2011-12-07 | 保定天威集团有限公司 | Method for preparing transparent conductive electrode with dual-structure texture surface |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate and preparation method thereof and organic electroluminescent device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108529894A (en) * | 2017-03-06 | 2018-09-14 | Tcl集团股份有限公司 | A kind of BZO glass and preparation method, QLED devices and preparation method |
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Application publication date: 20170222 |