CN106449828A - Backboard used in photovoltaic battery pack and photovoltaic battery pack - Google Patents
Backboard used in photovoltaic battery pack and photovoltaic battery pack Download PDFInfo
- Publication number
- CN106449828A CN106449828A CN201611201821.7A CN201611201821A CN106449828A CN 106449828 A CN106449828 A CN 106449828A CN 201611201821 A CN201611201821 A CN 201611201821A CN 106449828 A CN106449828 A CN 106449828A
- Authority
- CN
- China
- Prior art keywords
- backboard
- reflecting prism
- layer
- photovoltaic module
- battery pack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010410 layer Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011229 interlayer Substances 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010439 graphite Substances 0.000 claims abstract description 6
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 6
- 210000003850 cellular structure Anatomy 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 239000002313 adhesive film Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 210000002858 crystal cell Anatomy 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 239000004575 stone Substances 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a backboard used in a photovoltaic battery pack and the photovoltaic battery pack using the backboard. The backboard comprises a backboard base body and conducting layers arranged on the lower surface of the backboard base body, an interlayer of the backboard base body or the upper surface of the backboard base body. The backboard used in the photovoltaic battery pack and the photovoltaic battery pack using the backboard have the advantages that the conducting layers are arranged on the lower surface of the backboard base body, the interlayer of the backboard base body or the upper surface of the backboard base body, when the photovoltaic battery pack is constructed, the conducting layers are electrically connected with a metal framework, and the metal framework is electrically connected with a grounded support, so that both the overall framework and the backboard form an equipotential body, and thus the risk of appearance of PID is sharply lowered. The arrangement of metal conducting layers (preferably choosing aluminum film which has the highest cost performance) or graphite conducting layers having good heat conduction on the lower surface of the backboard can eliminate the risk of the PID and at the same time provide a better heat dissipation effect for the battery pack as a radiator with a large area, and thus the purpose of 'kill two birds with one stone' can be achieved.
Description
Technical field
A kind of the present invention relates to photovoltaic cell component field, more particularly, it relates to back of the body being applied to photovoltaic cell component
Plate and photovoltaic cell component.
Background technology
In currently available technology, the backboard of photovoltaic cell component is insulation, and existing photovoltaic cell component has one
Insoluble problem, i.e. PID (current potential induction decay), photovoltaic module make under high pressure effect for a long time packaged glass, other
There is leakage current between encapsulating material, a large amount of accumulation on cell piece surface so that cell piece surface passivation effect deteriorate,
Lead to FF, lsc, Voc to reduce, make assembly property be less than design standard, do not have the technical scheme raising group of simply low cost at present
The anti-PID ability of part.
Content of the invention
The invention aims to providing, a kind of anti-PID effect is good, the simple technical scheme of low cost, scheme.
For reaching above-mentioned purpose, technical scheme is as follows：
A kind of backboard being applied to photovoltaic module, including backplane substrate and located at backplane substrate lower surface, matrix interlayer or
The conductive layer of body upper surface.
Preferably, described conductive layer is metal conducting layer or graphite guide electric layer.Preferably use aluminium film and substitute the prior art back of the body
Fluorine layer in plate, has good heat dissipation, anti-PID, the advantage increasing the life-span.
Preferably, also include the reflectance coating located at backboard upper first layer, described reflectance coating is provided with parallel longitudinal anti-
Penetrate prism, described reflecting prism corner angle is 60 ° -150 °.
Preferably, the prism vertex angle angle of described reflecting prism is preferably 120 °.
Preferably, the prism bases width of described reflecting prism is 50 μm.
Preferably, form V-shaped groove between neighboring reflection prism, described V-shaped groove A/F is 50 μm.
Preferably, described reflectance coating includes base material, reflecting prism layer, anti-on reflecting prism layer from bottom to up successively
Penetrate prism, and the reflector layer being covered in described reflecting prism surface.
Preferably, the ultra-violet curing glue-line that described reflecting prism layer solidifies for UV.
Preferably, described reflector layer is Electroplating Aluminum or plating alloy.
The present invention also provides a kind of photovoltaic cell component, and described photovoltaic module includes metal framework, envelope from top to bottom successively
Glaze, EVA adhesive film, crystalline silicon battery plate, EVA adhesive film, the above-mentioned backboard for photovoltaic module, described conductive layer and metal
Framework electrically connects.
Preferably, the underface in gap between silicon crystal cell piece for the described reflecting prism.
The technological merit of the present invention is to arrange conductive layer in backplane substrate lower surface, matrix interlayer or body upper surface,
When setting up photovoltaic cell component, conductive layer is electrically connected with metal framework, and metal framework is due to the support electrical connection of ground connection, whole
Individual framework, backboard all form an equipotential system, thus greatly reducing risk PID.
In the good graphite guide of backboard lower surface setting metal conducting layer (preferably cost performance highest aluminium film) or heat conduction
Electric layer, while eliminating PID hidden danger, by can provide for battery component and preferably dissipate as a large-area radiator
Thermal effect, kills two birds with one stone.
Brief description
In order to be illustrated more clearly that the technical scheme in embodiment of the present invention technology, below will be in the description of embodiment technology
The accompanying drawing of required use be briefly described it should be apparent that, drawings in the following description be only the present invention some are real
Apply example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 shows a kind of schematic diagram of the backboard for photovoltaic module of the present invention；
Fig. 2 is the structural representation of reflecting prism；
Fig. 3 is a kind of schematic diagram of the cross section of reflecting prism；
The schematic diagram of Fig. 4 photovoltaic cell component.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
As shown in figure 1, a kind of backboard being applied to photovoltaic module, including backplane substrate 2 with located at backplane substrate 2 following table
The conductive layer 3 in face, backplane substrate 2 interlayer or backplane substrate 2 upper surface, in Fig. 1, conductive layer 3 is located at the following table of backplane substrate 2
Face.
Preferably, described conductive layer is metal conducting layer or graphite guide electric layer.Preferably use aluminium film and substitute the prior art back of the body
Fluorine layer in plate, has good heat dissipation, anti-PID, the advantage increasing the life-span.
Preferably, also include the reflectance coating 1 located at backboard upper first layer, described reflectance coating 1 is provided with parallel longitudinal
Reflecting prism 11, described reflecting prism 11 corner angle is 60 ° -150 °.
In actual applications, prism 11 corner angle of described reflecting prism is preferably 120 °.
Preferably, the prism bases width of described reflecting prism 11 is 50 μm.
Preferably, form V-shaped groove between neighboring reflection prism 11, described V-shaped groove A/F is 50 μm.
As shown in Fig. 2 in actual applications, described reflectance coating 1 can adopt following structure：Include base from bottom to up successively
Material 12, reflecting prism layer 13 and reflector layer, described reflecting prism sets 11 on reflecting prism layer 13, and described reflector layer is covered in institute
State the surface of reflecting prism layer 13, if reflecting prism is only below the gap between silicon cell, then, reflector layer can be only
Cover the surface of reflecting prism 11.Reflector layer fits in reflecting prism surface using metallic film, or adopts plated metal technique
As aluminum, aluminium alloy Direct Electroplating to reflecting prism surface, reflector layer does not change the face shaping of reflecting prism, and effect is that light is entered
Row reflection.
Preferably, the ultra-violet curing glue-line that described reflecting prism layer solidifies for UV.Through photoetching or with die marks system
The matrix of standby reflecting prism, then Electroplating Aluminum or plating alloy on the matrix of reflecting prism, form reflector layer, thus being formed anti-
Penetrate prism 11.
Preferably, described reflector layer is Electroplating Aluminum or plating alloy.
The shape of cross section of single reflecting prism 11 can adopt triangle, semicircle, half elliptic, in order to reduce reflection
The height of prism and the more means that can regulate and control of increase, can adopt trinacriform, as shown in figure 3, single reflecting prism 11
Cross section has three wedge angles, is main peak 111, left forward 112 and right peak 113 respectively, the angle α between three wedge angles and γ, with
And the angle of the angle β, the angle of left forward 112 and right peak 113 of main peak 111, and two angles on reflecting prism base, all may be used
Joined with the angle of incidence according to sunlight and reflecting prism to the spacing (gap) between the distance of packaged glass, silicon cell etc.
Number, to adjust the height adjusting whole reflecting prism it is possible to convenient, improves reflection efficiency simultaneously.
As shown in figure 4, the present invention also provides a kind of photovoltaic cell component, described photovoltaic module includes gold from top to bottom successively
Belong to framework 6, packaged glass 5, EVA adhesive film (not shown), crystalline silicon battery plate assembly 4, EVA adhesive film (not shown), above-mentioned use
In the backboard of photovoltaic module, described conductive layer 3 is electrically connected with metal framework 6.Silicon cell assembly 4 by multiple silicon cells 41 with
Matrix arrangement carries out connection in series-parallel and forms, and would generally be provided with the gap of one fixed width between silicon cell 41.
Preferably, the underface in gap between silicon crystal cell piece for the described reflecting prism 11.So, it is radiated at silicon
Sunlight in gap between cell piece 41, the reflection of reflected prism 11, then encapsulated glass 5 reflect, due to reflecting prism
There is between the surface of 11 surface and packaged glass 5 certain angle, therefore reflection sunlight can be irradiated on silicon cell 41,
Thus improve the efficiency of photovoltaic cell component.
The technological merit of the present invention is to arrange conductive layer in backplane substrate lower surface, matrix interlayer or body upper surface,
When setting up photovoltaic cell component, conductive layer is electrically connected with metal framework, and metal framework is due to the support electrical connection of ground connection, whole
Individual framework, backboard all form an equipotential system, thus greatly reducing risk PID.
In the good graphite guide of backboard lower surface setting metal conducting layer (preferably cost performance highest aluminium film) or heat conduction
Electric layer, while eliminating PID hidden danger, by can provide for battery component and preferably dissipate as a large-area radiator
Thermal effect, kills two birds with one stone.
In this specification, each embodiment is described by the way of going forward one by one, and what each embodiment stressed is and other
The difference of embodiment, between each embodiment similar portion mutually referring to.State in the disclosed embodiments
Bright, so that professional and technical personnel in the field is capable of or use the present invention.To multiple modifications of these embodiments to this area
Will be apparent from for professional and technical personnel, generic principles defined herein can be in the spirit without departing from the present invention
Or in the case of scope, realize in other embodiments.Therefore, the present invention will not be limited and these enforcements shown in this article
Example, and it is to fit to the wide scope consistent with principles disclosed herein and features of novelty.
Claims (10)
1. a kind of backboard being applied to photovoltaic module is it is characterised in that include backplane substrate and located at backplane substrate lower surface, base
Interlayer body or the conductive layer of body upper surface.
2. the backboard for photovoltaic module according to claim 1 is it is characterised in that described conductive layer is metal conducting layer
Or graphite guide electric layer.
3. the backboard for photovoltaic module according to claim 1 is it is characterised in that also include first above backboard
The reflectance coating of layer, described reflectance coating is provided with parallel longitudinal reflecting prism, and described reflecting prism corner angle is 60 ° -150 °.
4. the backboard for photovoltaic module according to claim 2 is it is characterised in that the prism bases of described reflecting prism
Width is 50 μm.
5. the backboard for photovoltaic module according to claim 2 is it is characterised in that form V between neighboring reflection prism
Shape groove, described V-shaped groove A/F is 50 μm.
6. according to the arbitrary described backboard for photovoltaic module of claim 1-5 it is characterised in that described reflectance coating from down to
On include base material, reflecting prism layer, the reflecting prism on reflecting prism layer successively, and be covered in described reflecting prism surface
Reflector layer.
7. the backboard for photovoltaic module according to claim 6 is it is characterised in that described reflecting prism layer solidifies for UV
Ultra-violet curing glue-line.
8. the backboard for photovoltaic module according to claim 6 is it is characterised in that described reflector layer is Electroplating Aluminum or electricity
Alloy plating.
9. a kind of photovoltaic cell component, its feature exists, and described photovoltaic module includes metal framework, encapsulation glass from top to bottom successively
The arbitrary described backboard for photovoltaic module of glass, EVA adhesive film, crystalline silicon battery plate, EVA adhesive film, claim 1-8, described
Conductive layer is electrically connected with metal framework.
10. photovoltaic cell component according to claim 9 is it is characterised in that described reflecting prism is located at silicon crystal cell
The underface in the gap between piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611201821.7A CN106449828A (en) | 2016-12-22 | 2016-12-22 | Backboard used in photovoltaic battery pack and photovoltaic battery pack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611201821.7A CN106449828A (en) | 2016-12-22 | 2016-12-22 | Backboard used in photovoltaic battery pack and photovoltaic battery pack |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449828A true CN106449828A (en) | 2017-02-22 |
Family
ID=58215381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611201821.7A Pending CN106449828A (en) | 2016-12-22 | 2016-12-22 | Backboard used in photovoltaic battery pack and photovoltaic battery pack |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449828A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108551320A (en) * | 2018-03-25 | 2018-09-18 | 宜兴锦尚太阳能科技有限公司 | A kind of high euphotic solar energy modular construction |
| WO2020133284A1 (en) * | 2018-12-28 | 2020-07-02 | 中天科技精密材料有限公司 | Photovoltaic assembly and fabrication method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102232246A (en) * | 2008-10-03 | 2011-11-02 | 凸版印刷株式会社 | Solar battery module |
| JP2014143321A (en) * | 2013-01-24 | 2014-08-07 | Silicon Plus Corp | Solar cell module |
| CN205122608U (en) * | 2015-11-24 | 2016-03-30 | 张春晖 | It weakens solar cell panel who warp to slow down polarization effect and have |
-
2016
- 2016-12-22 CN CN201611201821.7A patent/CN106449828A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102232246A (en) * | 2008-10-03 | 2011-11-02 | 凸版印刷株式会社 | Solar battery module |
| JP2014143321A (en) * | 2013-01-24 | 2014-08-07 | Silicon Plus Corp | Solar cell module |
| CN205122608U (en) * | 2015-11-24 | 2016-03-30 | 张春晖 | It weakens solar cell panel who warp to slow down polarization effect and have |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108551320A (en) * | 2018-03-25 | 2018-09-18 | 宜兴锦尚太阳能科技有限公司 | A kind of high euphotic solar energy modular construction |
| WO2020133284A1 (en) * | 2018-12-28 | 2020-07-02 | 中天科技精密材料有限公司 | Photovoltaic assembly and fabrication method therefor |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170222 |