CN106449726A - OLED (organic light-emitting diode) display device and manufacture method thereof - Google Patents
OLED (organic light-emitting diode) display device and manufacture method thereof Download PDFInfo
- Publication number
- CN106449726A CN106449726A CN201611229581.1A CN201611229581A CN106449726A CN 106449726 A CN106449726 A CN 106449726A CN 201611229581 A CN201611229581 A CN 201611229581A CN 106449726 A CN106449726 A CN 106449726A
- Authority
- CN
- China
- Prior art keywords
- layer
- pixel
- light emitting
- oled display
- post
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses an OLED (organic light-emitting diode) display device and a manufacture method thereof; the OLED display device comprises a substrate, an anode layer, a pixel definition layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electronic transport layer, an electronic injection layer, spacer pillars, passivating pillars positioned on the spacer pillars, and a cathode layer, wherein conductive pillars are electrically connected to the cathode layer. By electrically connecting the conductive pillars to the cathode layer, it is equivalent that a conductive resistor is connected parallelly to the cathode layer, resistance of the cathode layer is decreased, voltage drop of the cathode layer is decreased accordingly, and the OLED display device can provide more uniform displaying at the premise of not increasing the thickness of the cathode layer or decreasing the light transmittance of the cathode layer. With the presence of the passivating pillars, lateral leaking current between adjacent light-emitting pixels is decreased, the problem of brightness possessing by pixels is avoided, color mixing rate is deceased, and product yield is increased.
Description
Technical field
The present invention relates to display technology field, a kind of more particularly, to OLED (Organic Light Emitting Diode,
Organic Light Emitting Diode) display device and preparation method thereof.
Background technology
OLED Display Technique has self luminous characteristic, describes typical OLED display structure below with reference to Fig. 1,
Fig. 1 schematically shows the section of structure of typical OLED display.
With reference to Fig. 1, OLED display structure mainly includes：For defining the pixel defining layer of light emitting pixel, described picture
Plain definition layer includes pixel region and pixel separation region 02；Spacer 03 above pixel separation area；And luminous picture
Element；Wherein, each light emitting pixel all includes anode 01, hole injection layer, hole transmission layer, luminescent layer 05, electron transfer layer, electricity
Sub- implanted layer and negative electrode 07.For convenience of description, in Fig. 1, hole transmission layer and hole injection layer are represented with Rotating fields 04,
Electron injecting layer and electron transfer layer are represented with Rotating fields 06.When providing driving voltage to anode 01 and negative electrode 07, empty
Electronics in hole in cave implanted layer and hole transmission layer 04 and electron injecting layer and electron injecting layer 06 is respectively facing luminous
Layer 05 is mobile, thus encouraging the fluorescent material in luminescent layer 05 to light, realizes pixel light emission.
Wherein, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer by whole face mask
Plate evaporation is formed, and covers whole pixel region.Because hole injection layer and hole transmission layer have good electric conductivity, controlling certain
When individual light emitting pixel lights, holes from anode to horizontal leakage current also can be produced while cathode flow, through hole transmission layer and
Hole injection layer reaches adjacent light emitting pixel, thus causing other colour light emitting pixels bright steathily.
Because, in top-illuminating OLED structure, negative electrode is outgoing bright finish, needs negative electrode to have good light transmission, therefore, existing
Have need in technology by negative electrode do thinner, but the resistance of relatively thin negative electrode larger so that the voltage in whole oled panel not
All, produce larger voltage drop, thus causing to show uneven phenomenon.
How to provide one kind can reduce light emitting pixel to steal bright and show uniform OLED display, become urgently to be resolved hurrily
Problem.
Content of the invention
In view of this, the present invention provides a kind of OLED display and preparation method thereof, to solve OLED in prior art
Show present in display device display process that uneven and light emitting pixel steals bright problem.
For achieving the above object, the present invention provides following technical scheme：
A kind of OLED display, including：
Substrate；
It is formed at anode layer, the pixel defining layer of described substrate side, described pixel defining layer includes multiple pixel regions
With multiple pixel separation regions, two neighboring described pixel region is spaced apart from each other by described pixel separation region；
Described anode layer deviate from described substrate surface formed hole injection layer, hole transmission layer, luminescent layer, electronics
Transport layer and electron injecting layer；
Described hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are in described pixel region
Form light emitting pixel；
It is formed in described pixel defining layer and be located at the spacer in described pixel separation region；
Deviate from the passivation post of described pixel defining layer positioned at described spacer, described passivation post runs through the injection of described hole
Layer, described hole transmission layer, described electron transfer layer and described electron injecting layer；
It is formed at the conductive pole that described passivation post deviates from the surface of described spacer；
It is formed at the cathode layer that described conductive pole deviates from described substrate side；
Wherein, described conductive pole and described cathode layer are electrically connected with.
The present invention also provides a kind of OLED display manufacture method, is applied to OLED display recited above, institute
State OLED display manufacture method to include：
Substrate is provided；
Sequentially form anode layer and pixel defining layer on the substrate, described pixel defining layer includes multiple pixel regions
With multiple pixel separation regions, two neighboring described pixel region is spaced apart from each other by described pixel separation region；
Spacer is formed on described pixel separation region；
Passivation post is formed on described spacer；
Described passivation post forms conductive pole；
Evaporation forms hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively, wherein,
Described hole injection layer and described anode layer directly contact, described hole injection layer, described hole transmission layer, described electric transmission
Layer and described electron injecting layer disconnect in the edge of described passivation post；
Evaporation forms whole face cathode layer, and described cathode layer is electrically connected with described conductive pole.
Understand via above-mentioned technical scheme, the OLED display that the present invention provides, spacer increases and runs through empty
The passivation post of cave implanted layer, hole transmission layer, electron transfer layer and electron injecting layer, also increases on described passivation post simultaneously and leads
Electric post, described conductive pole is electrically connected with the cathode layer of OLED display, has been equivalent to as cathode layer parallel connection conductive resistance, fall
The low resistance of cathode layer, thus reducing the voltage drop of cathode layer, and then make the luminous OLED display in top with respect to
The OLED display of prior art, is not increasing cathode electrode layer thickness, and on the basis of reducing cathode layer light transmission, display is more equal
Even.
Meanwhile, heretofore described passivation post runs through hole injection layer, hole transmission layer, electron transfer layer and electron injection
Layer is so that hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer disconnect in passivation post part, thus reducing
When certain light emitting pixel is lit, horizontal leakage current between adjacent light emitting pixel, it is to avoid other light emitting pixels steal bright asking
Topic, and then reduce the generation of colour mixture, improve product yield.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
Fig. 1 is the section of structure of typical OLED display in prior art；
Fig. 2 is that to have the OLED display of different cathode thickness corresponding startup magnitude of voltage under different size of current bent
Line chart；
Fig. 3 is the instance graph of display floater；
Fig. 4 is a kind of OLED display provided in an embodiment of the present invention；
Fig. 5 is a kind of pixel arrangement mode provided in an embodiment of the present invention；
Fig. 6 is a kind of manufacture method flow chart of OLED display provided in an embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
As shown in Fig. 2 Fig. 2 be the OLED display with different-thickness negative electrode under different size of current, corresponding
Start magnitude of voltage, in Fig. 2, abscissa is electric current density, vertical coordinate is to start voltage swing, and wherein, dot represents cathode thickness
ForOLED display, square represents cathode thickness and is OLED display.Can from figure data
Go out, cathode thickness isThe startup voltage ratio cathode thickness of OLED display beOLED start voltage
Greatly, but blocked up negative electrode cause light transmission be deteriorated.Because, in top-illuminating OLED structure, negative electrode is outgoing bright finish, negative electrode is needed to have
Have good light transmission, therefore, need in prior art by negative electrode do thinner, but can there is larger electricity in relatively thin negative electrode
Resistance, causes the voltage drop of negative electrode larger, thus the uneven phenomenon of display in OLED display panel.As shown in figure 3, being aobvious
Show the instance graph of panel, by FPC (abbreviation of Flexible Printed Circuit, flexible printed circuit board), current potential is passed through
Reflecting electrode RE gives to the negative electrode 7 of display floater, so that display floater is lighted, because display floater centre position produces voltage drop phase
Voltage drop for display floater periphery is larger, causes intermediate luminance less than surrounding brightness, thus occurring showing uneven showing
As.
Further, since hole injection layer, hole transmission layer, luminescent layer, electronics pass in OLED display in prior art
Defeated layer, electron injecting layer are formed by the mask plate evaporation in whole face, cover whole pixel region；Negative electrode is deposited with shape by negative electrode mask
Become, also cover whole pixel region.And hole injection layer and hole transmission layer have good electric conductivity, controlling certain luminous picture
When element is luminous, holes from anode, to also producing horizontal leakage current while cathode flow, injects through hole transmission layer and hole
Layer reaches adjacent light emitting pixel, thus causing other adjacent colour light emitting pixel light emission, causes to produce mixed color phenomenon during display,
Produce crosstalk, reduce the yield of product.
Based on the problems referred to above, the present invention provides a kind of OLED display, including：
Substrate；
It is formed at anode layer, the pixel defining layer of described substrate side, described pixel defining layer includes multiple pixel regions
With multiple pixel separation regions, two neighboring described pixel region is spaced apart from each other by described pixel separation region；
Described anode layer deviate from described substrate surface formed hole injection layer, hole transmission layer, luminescent layer, electronics
Transport layer and electron injecting layer；
Described hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are in described pixel region
Form light emitting pixel；
It is formed in described pixel defining layer and be located at the spacer in described pixel separation region；
Deviate from the passivation post of described pixel defining layer positioned at described spacer, described passivation post runs through the injection of described hole
Layer, described hole transmission layer, described electron transfer layer and described electron injecting layer；
It is formed at the conductive pole that described passivation post deviates from the surface of described spacer；
It is formed at the cathode layer that described conductive pole deviates from described substrate side；
Wherein, described conductive pole and described cathode layer are electrically connected with.
By increasing, in OLED display in the prior art, the conductive pillar structure being electrically connected with negative electrode, be equivalent to
To negative electrode one resistance of parallel connection, thus reducing the resistance of negative electrode, the voltage drop of negative electrode reduces, so that OLED display
Display is more uniform.Further, can also by negative electrode do thinner, such that it is able to increase the light transmission of OLED display.
In addition, also including running through described hole injection layer, described hole transmission layer, described electron transfer layer and described electron injecting layer
Passivation post, plays the horizontal leakage current intercepting between the passivation two neighboring light emitting pixel of post, so that the luminous picture of certain color
When element is lit, decrease the bright steathily of adjacent light emitting pixel, and then reduce the crosstalk of OLED display, improve product
Yield.
Refer to Fig. 4, Fig. 4 is a kind of OLED display provided in an embodiment of the present invention, including：Substrate 0；It is formed at base
The anode layer 1 of plate 0 side, pixel defining layer, pixel defining layer includes multiple pixel regions and multiple pixel separation region 2, phase
Adjacent two pixel regions are spaced apart from each other by pixel separation region 2；The hole note that the surface deviating from substrate in anode layer 1 is formed
Enter layer and hole transmission layer 4, luminescent layer 5, electron transfer layer and electron injecting layer 6；Hole injection layer and hole transmission layer 4, send out
Photosphere 5, electron transfer layer and electron injecting layer 6 form light emitting pixel in pixel region；It is formed in pixel defining layer and be located at
The spacer 3 in pixel separation region 2；Deviate from the passivation post 8 of pixel defining layer positioned at spacer 3, passivation post 8 runs through hole injection
Layer and hole transmission layer 4, electron transfer layer and electron injecting layer 6；It is formed at the conduction that passivation post 8 deviates from the surface of spacer 3
Post 9；It is formed at the cathode layer 7 that conductive pole 9 deviates from substrate 0 side；Wherein, conductive pole 9 and cathode layer 7 are electrically connected with.
Also include being passivated post 8 in the present embodiment on spacer 3, passivation post 8 runs through hole injection layer and hole transmission layer
4th, electron transfer layer and electron injecting layer 6 are such that it is able to intercept the horizontal leakage between two light emitting pixels adjacent with this passivation post 8
Stream.It should be noted that in OLED display pixel arrangement mode, it is understood that there may be the adjacent situation of multiple light emitting pixels,
Now, only passivation post can be set between two different pixels of adjacent and glow color, and, in order to ensure to be passivated the resistance of post
In effect, the present embodiment on the direction of the line at the center along two light emitting pixels adjacent perpendicular to passivation post, passivation
The greatest length of post is more than or equal to the greatest length of two light emitting pixels adjacent with passivation post, thus will be two neighboring luminous
Cross walkway between pixel is blocked completely, it is to avoid the horizontal leakage current between two light emitting pixels, and then avoids a luminous picture
When vegetarian refreshments is bright, the light emitting pixel being adjacent steals bright phenomenon.
Refer to Fig. 5, Fig. 5 is a kind of pixel arrangement mode provided in an embodiment of the present invention, and Fig. 5 institute diagram is parallel to base
The plane of plate surface, on the direction of the line at the center along two light emitting pixels adjacent perpendicular to passivation post 8, such as in figure is hung down
Directly in the direction of light emitting pixel R and the line of centres of light emitting pixel G, namely on second direction S direction, it is passivated greatly enhancing most of post 8
Degree D2 is more than or equal to the greatest length D1 of two light emitting pixels adjacent with passivation post 8.
In the present embodiment, passivation post 8 is located at least between adjacent and two different light emitting pixels of color.I.e. the present embodiment
In two adjacent light emitting pixel colors when differing, the luminous of two neighboring different colours is stopped by setting passivation post 8
The horizontal leakage current of pixel；The color of two adjacent light emitting pixels is identical, even if there is horizontal leakage current, steathily bright light emitting pixel with
The light emitting pixel color being lit is identical, is not in the problem of colour mixture, therefore, when two neighboring light emitting pixel color is identical,
Passivation post can be set it is also possible to be not provided with being passivated post.
It should be noted that be located in the line with the center of passivation adjacent two light emitting pixels of post in the present embodiment
In the plane of substrate, in plane as shown in Figure 4, the section of passivation post 8 is tetragon, and two near spacer 3
In individual interior angle, at least one is more than 90 °.Now, due to passivation post 8 in two interior angles of spacer 3 at least one big
In 90 °, passivation post 8 is more than a side of 90 ° of interior angle, namely is passivated post 8 towards the side wall W1 of light emitting pixel with respect to interval
The surface that post 3 deviates from substrate tilts towards substrate, forms hole injection layer and hole transmission layer 4, lights in evaporation organic material
When layer 5, electron transfer layer and electron injecting layer 6, organic material cannot below the described downward-sloping side wall W1 of passivation post 8
Deposition, thus passivation post 8 described downward-sloping side wall W1 place disconnect, thus realize be passivated post 8 by hole injection layer with
Hole transmission layer 4, electron transfer layer and electron injecting layer 6 disconnect, it is to avoid the cross walkway between two neighboring light emitting pixel.
It should be noted that for ensureing to be passivated the barriering effect of post, alternatively, in the present embodiment, passivation post is near described
Two interior angles of spacer are all higher than 90 °, that is, shown in Fig. 4, and two side wall W1 and side wall W2 of passivation post 8 all tilt to substrate.
In theory, as long as passivation post is more than 90 ° near two at least one interior angles of interior angle of spacer can achieve two neighboring of obstruct
Cross walkway between light pixel.Optional in the present embodiment, passivation post 8 is carried out after adopting chemical vapor deposition (CVD) film forming
Etching is made, and for processing technology angle, bigger near the angle of two interior angles of spacer, etching technics difficulty is got over
Greatly, therefore, optional in the present embodiment, passivation post is all higher than 90 ° near two interior angles of spacer, and is less than or equal to
120°.
In the plane perpendicular to substrate that the line at the center of two light emitting pixels adjacent with passivation post is located, such as scheme
In plane shown in 4, the section of passivation post 8 is tetragon, does not limit the concrete shape of described tetragon in the present embodiment, permissible
It is parallelogram, inverted trapezoidal or other tetragons, as long as meeting at least one side wall of this passivation post is with respect to the spacer back of the body
Tilt towards substrate from the surface of substrate.For ensureing that being passivated post both sides is all capable of hole injection layer and hole transport
Layer 4 and the disconnection of electron transfer layer and electron injecting layer 6, the present embodiment is optional, and passivation post 8 is inverted trapezoidal structure, in such as Fig. 4
Shown.
In the present embodiment to passivation post material do not limit, optionally, passivation post material be silicon oxide, silicon nitride and
One or more of silicon oxide carbide.Passivation post can be the silicon oxide carbide of mono-layer oxidized silicon, single-layer silicon nitride silicon or monolayer, also may be used
To be alternatively formed by one layer of silicon oxide, one layer of silicon nitride, in the present embodiment, this is not limited.
In addition, also not limiting to the thickness of passivation post 8 in the present embodiment, as long as it can run through hole transmission layer and sky
Cave implanted layer 4, electron transfer layer and electron injecting layer 6, but because cathode layer 7 is to share between each light emitting pixel,
Therefore, optionally, shown in Figure 4, the thickness L1 being passivated post in the present embodiment is more than or equal to hole transmission layer and hole
Thickness sum L2 of implanted layer 4, electron transfer layer and electron injecting layer 6, and less than hole transmission layer and hole injection layer 4, electricity
Thickness sum L3 of sub- transport layer and electron injecting layer 6 and cathode layer 7.Namely in figure L2≤L1 ＜ L3.
In the present embodiment, the effect of conductive pole 9 is to be electrically connected and cathode layer 7 between, in parallel with cathode layer 7, reduces
The resistance of cathode layer 7, such that it is able to reduce the voltage drop of cathode layer 7 so that OLED display shows more uniformly, but needs
It is noted that conductive pole 9 there is good electric conductivity it is impossible to hole injection layer and hole transmission layer 4, electron injecting layer and electricity
Produce between sub- transport layer 6 and be electrically connected with, therefore, passivation post 8 also acts as the work supporting conductive pole 9 in embodiments of the present invention
With.
The thickness sum of general OLED display hole-transporting layer and hole injection layer is aboutElectric transmission
The thickness of layer and electron injecting layer is aboutNegative electrode is usually magnesium (Mg) silver (Ag) alloy, and its thickness is aboutLeft and right.
Therefore, can arrange in the present embodiment passivation post thickness beIncluding endpoint value.This thickness range makes
Post must be passivated can disconnect hole transmission layer and hole injection layer and not affect the covering of cathode layer.
It should be noted that not limiting the concrete mode of conductive pole 9 and the electric connection of cathode layer 7 in the present embodiment, can
Choosing, it is electrically connected with using via mode conductive pole 9 and cathode layer 7 in the present embodiment, as shown in figure 4, due to completing
After conductive pole 9, evaporation organic material forms hole injection layer hole transmission layer 4, luminescent layer 5, electron transfer layer and electronics successively
Implanted layer 6, may remain described organic material on conductive pole 9 and form organic layer, then the side deviating from substrate 0 in conductive pole 9
When forming cathode layer 7, between conductive pole 9 and cathode layer 7, include the organic layer remaining, as shown in figure 4, passing through in the present embodiment
Form via 10, thus conductive pole 9 and cathode layer 7 are electrically connected with organic layer.Specifically, do not limit via in the present embodiment
10 formation process, due to the thinner thickness of remaining organic, optional in the present embodiment, via 10 adopts laser welding process
Organic layer is punched and is formed.
The material of conductive pole 9 is not limited, as long as the electricity of cathode layer 7 can be reduced after it is in parallel with cathode layer 7 in the present embodiment
Hinder, therefore, the resistance of conductive pole 9 is the smaller the better, optional in the embodiment of the present invention, the material of conductive pole 9 is metal, more
Plus optional, it is that electric conductivity is preferable, the less metal of resistance, including one of silver, copper, aluminum, molybdenum, ferrum or at least two gold medals
The alloy belonging to.
Do not limit the pixel arrangement mode of OLED display in the embodiment of the present invention, optionally, refer to Fig. 5, Fig. 5 is
A kind of pixel arrangement mode provided in an embodiment of the present invention, wherein, multiple light emitting pixels at least include color mutually different
One light emitting pixel R, the second light emitting pixel G and the 3rd light emitting pixel B；First light emitting pixel R and the second light emitting pixel G is along first party
It is repeated in arranging to F, form the first pixel column；3rd light emitting pixel B F repeated arrangement in the first direction, forms the second pixel
Row；S is repeated in arranging in a second direction for first pixel column and the second pixel column；Wherein, F in the first direction, the 3rd luminous picture
Plain B is centrally located between the center of the first light emitting pixel R and the center of the second light emitting pixel G.
Shown in Fig. 5 in the top view of OLED display, namely the projection on substrate, the first light emitting pixel R and the
Two light emitting pixel G are shape identical rectangle；3rd light emitting pixel B is strip, and with positioned at the first light emitting pixel R and second
The projection of the passivation post between light pixel G is mutually perpendicular to.
It should be noted that not limiting the luminous picture of the first light emitting pixel, the second light emitting pixel and the 3rd in the present embodiment
The concrete color of element, optionally, the first light emitting pixel is red pixel, and the second light emitting pixel is green pixel, the 3rd luminous picture
Element is blue pixel；In the present embodiment, the pixel arrangement of OLED display can also be other arrangement modes, such as light emitting pixel
The 4th light emitting pixel can also be included, the 4th light emitting pixel is white pixel, with the first light emitting pixel, the second light emitting pixel, the
Three light emitting pixel composition R (Red) G (Green) B (Blue) W (White) colorimeter systems, do not do to this in the present embodiment and retouch in detail
State.
The OLED display providing in the embodiment of the present invention, increases on spacer and runs through hole injection layer, hole biography
The passivation post of defeated layer, electron transfer layer and electron injecting layer, also increases conductive pole, described conductive pole on described passivation post simultaneously
It is electrically connected with the cathode layer of OLED display, be equivalent to as cathode layer parallel connection conductive resistance, reduced the electricity of cathode layer
Resistance, thus reducing the voltage drop of cathode layer, and then makes the OLED that the luminous OLED display in top is with respect to prior art
Display device, is not increasing cathode electrode layer thickness, and on the basis of reducing cathode layer light transmission, display is more uniform.
Meanwhile, heretofore described passivation post runs through hole injection layer, hole transmission layer, electron transfer layer and electron injection
Layer is so that hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer disconnect in passivation post part, thus reducing
When certain light emitting pixel is lit, horizontal leakage current between adjacent light emitting pixel, it is to avoid other light emitting pixels steal bright asking
Topic.
The manufacture method that an alternative embodiment of the invention provides OLED display in a kind of above example, such as schemes
Shown in 6, it is the manufacture method flow chart of OLED display, it includes：
Step S101：Substrate is provided；
Do not limit the material of described substrate in the present embodiment, be chosen as the material such as glass or flexible PI (polyimides).
Step S102：Sequentially form anode layer and pixel defining layer on the substrate, described pixel defining layer includes many
Individual pixel region and multiple pixel separation region, two neighboring described pixel region is spaced by described pixel separation region
Open；
Do not limit the material of described anode layer in the present embodiment, can be transparent conductive material or nontransparent conductive material,
In the present embodiment, this is not limited, optionally, be the lamination knot of ITO (tin indium oxide) layer, argent (Ag) layer and ITO layer
Structure.
Step S103：Spacer is formed on described pixel separation region；
Step S104：Passivation post is formed on described spacer；
Passivation post is formed in the embodiment of the present invention on spacer be specially：Chemical vapor deposition forms flood passivating film；
Etching passivating film, removes the passivating film outside spacer, forms the passivation post being located on spacer, the material of described passivation post is oxygen
One or more of SiClx, silicon nitride and silicon oxide carbide.Described passivation post thickness range beIncluding
Endpoint value.Two interior angles near described spacer are all higher than 90 °.
Step S105：Described passivation post forms conductive pole；
The material of described conductive pole is metal, is chosen as one of silver, copper, aluminum, molybdenum, ferrum or the conjunction of at least two metals
Gold, the embodiment of the present invention does not limit to this.
Step S106：Evaporation forms hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electronics note successively
Enter layer, wherein, described hole injection layer and described anode layer directly contact, described hole injection layer, described hole transmission layer, institute
The edge stating electron transfer layer and described electron injecting layer in described passivation post disconnects.
When hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are formed by evaporation,
One layer of organic material layer of conductive pole remained on surface, therefore, before follow-up making cathode layer, can also wrap in the embodiment of the present invention
Include and evaporation formation hole injection layer, hole transmission layer, luminescent layer, electronics biography on described conductive pole are irradiated using laser welding process
Via is formed on the organic layer remaining when defeated layer and electron injecting layer.
Step S107：Evaporation forms whole face cathode layer, and described cathode layer is electrically connected with described conductive pole.
In the present embodiment, the material of cathode layer is chosen as magnesium silver alloy, and cathode layer is passed through through hole and is electrically connected with conductive pole.
In OLED display manufacture method provided in an embodiment of the present invention, for making conductive pole and passivation post, only increase
Chemical vapor deposition and etching technics, do not introduce more complicated processing technology, therefore, the OLED that the present embodiment provides
Display device manufacture method is easy, easily realizes, does not increase with respect to the making of OLED display in prior art numerous
Trivial processing technology.
It should be noted that each embodiment in this specification is all described by the way of going forward one by one, each embodiment weight
Point explanation is all difference with other embodiment, between each embodiment identical similar partly mutually referring to.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (21)
1. a kind of OLED display is it is characterised in that include：
Substrate；
It is formed at anode layer, the pixel defining layer of described substrate side, described pixel defining layer includes multiple pixel regions and many
Individual pixel separation region, two neighboring described pixel region is spaced apart from each other by described pixel separation region；
Described anode layer deviate from described substrate surface formed hole injection layer, hole transmission layer, luminescent layer, electric transmission
Layer and electron injecting layer；
Described hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are formed in described pixel region
Light emitting pixel；
It is formed in described pixel defining layer and be located at the spacer in described pixel separation region；
Deviate from the passivation post of described pixel defining layer positioned at described spacer, described passivation post runs through described hole injection layer, institute
State hole transmission layer, described electron transfer layer and described electron injecting layer；
It is formed at the conductive pole that described passivation post deviates from the surface of described spacer；
It is formed at the cathode layer that described conductive pole deviates from described substrate side；
Wherein, described conductive pole and described cathode layer are electrically connected with.
2. OLED display according to claim 1 it is characterised in that described passivation post be arranged at two neighboring described
Between light emitting pixel, on the direction of the line at the center along the two described light emitting pixels adjacent perpendicular to described passivation post,
The greatest length of described passivation post is more than or equal to the greatest length of the two described light emitting pixels adjacent with described passivation post.
3. OLED display according to claim 2 it is characterised in that with described passivation adjacent described two of post
In the plane perpendicular to described substrate that the line at the center of light emitting pixel is located, the section of described passivation post is tetragon, and
In two interior angles of described spacer, at least one is more than 90 °.
4. OLED display according to claim 3 is it is characterised in that described passivation post is near the two of described spacer
Individual interior angle is all higher than 90 °.
5. OLED display according to claim 4 is it is characterised in that described passivation post is near the two of described spacer
Individual interior angle is all higher than 90 °, and is less than or equal to 120 °.
6. OLED display according to claim 4 is it is characterised in that described tetragon is inverted trapezoidal.
7. OLED display according to claim 1 is it is characterised in that the material of described passivation post is silicon oxide, nitrogen
One or more of SiClx and silicon oxide carbide.
8. OLED display according to claim 1 is it is characterised in that described passivation post adopts chemical vapor deposition to become
Perform etching after film and be made.
9. OLED display according to claim 1 is it is characterised in that the thickness of described passivation post is more than or equal to institute
State the thickness sum of hole transmission layer, described hole injection layer, described electron transfer layer and described electron injecting layer, and be less than institute
State hole transmission layer, described hole injection layer, described electron transfer layer, described electron injecting layer and described cathode layer thickness it
With.
10. OLED display according to claim 9 is it is characterised in that the thickness range of described passivation post isIncluding endpoint value.
11. OLED display according to claim 1 are it is characterised in that described conductive pole and described cathode layer pass through
Via between described conductive pole and described cathode layer is electrically connected with.
12. OLED display according to claim 11 are it is characterised in that described via adopts laser welding process shape
Become.
13. OLED display according to claim 1 are it is characterised in that the material of described conductive pole is metal.
14. OLED display according to claim 13 it is characterised in that the material of described conductive pole include silver, copper,
One of aluminum, molybdenum, ferrum or the alloy of at least two metals.
15. OLED display according to claim 1-14 any one are it is characterised in that multiple described light emitting pixel
At least include mutually different first light emitting pixel of color, the second light emitting pixel and the 3rd light emitting pixel；
Described passivation post is located at least between adjacent and two different light emitting pixels of color.
16. OLED display according to claim 15 it is characterised in that
Described first light emitting pixel and described second light emitting pixel are repeated in arranging in the first direction, form the first pixel column；
Described 3rd light emitting pixel, along described first direction repeated arrangement, forms the second pixel column；
Described first pixel column and described second pixel column are repeated in arranging in a second direction；
Wherein, along described first direction, described 3rd light emitting pixel is centrally located at the center and of described first light emitting pixel
Between the center of two light emitting pixels.
17. OLED display according to claim 16 it is characterised in that projection on the substrate, described
One light emitting pixel and described second light emitting pixel are shape identical rectangle；Described 3rd light emitting pixel be strip, and be located at
The projection of the passivation post between described first light emitting pixel and the second light emitting pixel is mutually perpendicular to.
18. OLED display according to claim 17 are it is characterised in that described first light emitting pixel is red picture
Element, described second light emitting pixel is green pixel, and described 3rd light emitting pixel is blue pixel.
A kind of 19. OLED display manufacture methods are it is characterised in that be applied to described in claim 1-18 any one
OLED display, described OLED display manufacture method includes：
Substrate is provided；
Sequentially form anode layer and pixel defining layer on the substrate, described pixel defining layer includes multiple pixel regions and many
Individual pixel separation region, two neighboring described pixel region is spaced apart from each other by described pixel separation region；
Spacer is formed on described pixel separation region；
Passivation post is formed on described spacer；
Described passivation post forms conductive pole；
Evaporation forms hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively, wherein, described
Hole injection layer and described anode layer directly contact, described hole injection layer, described hole transmission layer, described electron transfer layer and
Described electron injecting layer disconnects in the edge of described passivation post；
Evaporation forms whole face cathode layer, and described cathode layer is electrically connected with described conductive pole.
20. manufacture methods according to claim 19 are it is characterised in that described form passivation post tool on described spacer
Body is：
Chemical vapor deposition forms flood passivating film；
Etch described passivating film, remove the described passivating film outside described spacer, form the passivation post being located on described spacer.
21. manufacture methods according to claim 19 are it is characterised in that went back before described evaporation forms whole face cathode layer
Including：
Evaporation on described conductive pole is irradiated using laser welding process and forms hole injection layer, hole transmission layer, luminescent layer, electronics
Via is formed on the organic layer remaining when transport layer and electron injecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611229581.1A CN106449726B (en) | 2016-12-27 | 2016-12-27 | A kind of OLED display and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611229581.1A CN106449726B (en) | 2016-12-27 | 2016-12-27 | A kind of OLED display and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449726A true CN106449726A (en) | 2017-02-22 |
| CN106449726B CN106449726B (en) | 2019-04-26 |
Family
ID=58215974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611229581.1A Active CN106449726B (en) | 2016-12-27 | 2016-12-27 | A kind of OLED display and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449726B (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093674A (en) * | 2017-06-09 | 2017-08-25 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel, preparation method and its display device |
| CN107316612A (en) * | 2017-07-11 | 2017-11-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and OLED display |
| CN107706221A (en) * | 2017-09-28 | 2018-02-16 | 深圳市华星光电半导体显示技术有限公司 | The preparation method and OLED display of OLED display |
| CN107910348A (en) * | 2017-10-26 | 2018-04-13 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN108110037A (en) * | 2017-12-29 | 2018-06-01 | 昆山国显光电有限公司 | Flexible display screen |
| WO2018188153A1 (en) * | 2017-04-10 | 2018-10-18 | 深圳市华星光电技术有限公司 | Woled display device |
| CN109087931A (en) * | 2017-06-13 | 2018-12-25 | 上海和辉光电有限公司 | Display panel and display device |
| CN109962087A (en) * | 2017-12-05 | 2019-07-02 | 乐金显示有限公司 | El display device |
| CN110112179A (en) * | 2019-04-08 | 2019-08-09 | 深圳市华星光电半导体显示技术有限公司 | Oled panel |
| CN110112320A (en) * | 2018-06-22 | 2019-08-09 | 友达光电股份有限公司 | Light-emitting component |
| WO2019173946A1 (en) * | 2018-03-12 | 2019-09-19 | Boe Technology Group Co., Ltd. | Organic light emitting diode array substrate, display panel and display apparatus, and fabricating method thereof |
| US10522607B2 (en) | 2017-07-11 | 2019-12-31 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | OLED display panel and OLED display apparatus |
| CN110634922A (en) * | 2019-09-24 | 2019-12-31 | 昆山国显光电有限公司 | Display panel and display device |
| CN110911466A (en) * | 2019-11-29 | 2020-03-24 | 京东方科技集团股份有限公司 | Substrate and preparation method thereof, preparation method of mother board, mask and evaporation device |
| CN110993678A (en) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN111403450A (en) * | 2020-03-26 | 2020-07-10 | 京东方科技集团股份有限公司 | Array substrate, display device and preparation process of array substrate |
| WO2020151064A1 (en) * | 2019-01-25 | 2020-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method |
| CN112002827A (en) * | 2020-09-03 | 2020-11-27 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| WO2020258984A1 (en) * | 2019-06-25 | 2020-12-30 | 京东方科技集团股份有限公司 | Manufacturing method for display substrate, display substrate, and display device |
| CN113178462A (en) * | 2021-04-07 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | Pixel structure, preparation method thereof and display device |
| CN113437232A (en) * | 2020-03-23 | 2021-09-24 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN113707822A (en) * | 2021-08-27 | 2021-11-26 | 成都京东方光电科技有限公司 | Display substrate, display panel and display device |
| WO2022032741A1 (en) * | 2020-08-11 | 2022-02-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
| US11456345B1 (en) | 2021-04-23 | 2022-09-27 | Applied Materials, Inc. | Conductive oxide overhang structures for OLED devices |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384461B1 (en) * | 1999-10-15 | 2002-05-07 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
| CN103000638A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light-emitting diode display device |
| US20130240851A1 (en) * | 2012-03-14 | 2013-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
| US20130285021A1 (en) * | 2010-08-16 | 2013-10-31 | University Of Washington Through Its Center For Commercialization | Solution-processable electron-transport materials and related organic optoelectronic devices |
-
2016
- 2016-12-27 CN CN201611229581.1A patent/CN106449726B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384461B1 (en) * | 1999-10-15 | 2002-05-07 | Xerox Corporation | Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays |
| US20130285021A1 (en) * | 2010-08-16 | 2013-10-31 | University Of Washington Through Its Center For Commercialization | Solution-processable electron-transport materials and related organic optoelectronic devices |
| US20130240851A1 (en) * | 2012-03-14 | 2013-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
| CN103000638A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and organic light-emitting diode display device |
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018188153A1 (en) * | 2017-04-10 | 2018-10-18 | 深圳市华星光电技术有限公司 | Woled display device |
| CN107093674A (en) * | 2017-06-09 | 2017-08-25 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel, preparation method and its display device |
| CN107093674B (en) * | 2017-06-09 | 2020-03-17 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, preparation method and display device thereof |
| CN109087931A (en) * | 2017-06-13 | 2018-12-25 | 上海和辉光电有限公司 | Display panel and display device |
| CN107316612A (en) * | 2017-07-11 | 2017-11-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and OLED display |
| US10522607B2 (en) | 2017-07-11 | 2019-12-31 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | OLED display panel and OLED display apparatus |
| CN107706221A (en) * | 2017-09-28 | 2018-02-16 | 深圳市华星光电半导体显示技术有限公司 | The preparation method and OLED display of OLED display |
| CN107706221B (en) * | 2017-09-28 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | The production method and OLED display of OLED display |
| WO2019061736A1 (en) * | 2017-09-28 | 2019-04-04 | 深圳市华星光电半导体显示技术有限公司 | Method for manufacturing oled display and oled display |
| CN107910348A (en) * | 2017-10-26 | 2018-04-13 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN107910348B (en) * | 2017-10-26 | 2021-03-16 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN109962087B (en) * | 2017-12-05 | 2023-10-24 | 乐金显示有限公司 | Electroluminescent display device |
| CN109962087A (en) * | 2017-12-05 | 2019-07-02 | 乐金显示有限公司 | El display device |
| CN108110037A (en) * | 2017-12-29 | 2018-06-01 | 昆山国显光电有限公司 | Flexible display screen |
| US11335877B2 (en) | 2018-03-12 | 2022-05-17 | Boe Technology Group Co., Ltd. | Organic light emitting diode array substrate, display panel and display apparatus, and fabricating method thereof |
| CN110447107A (en) * | 2018-03-12 | 2019-11-12 | 京东方科技集团股份有限公司 | Organic LED array substrate, display panel and display equipment and manufacturing method |
| WO2019173946A1 (en) * | 2018-03-12 | 2019-09-19 | Boe Technology Group Co., Ltd. | Organic light emitting diode array substrate, display panel and display apparatus, and fabricating method thereof |
| CN110447107B (en) * | 2018-03-12 | 2022-01-11 | 京东方科技集团股份有限公司 | Organic light emitting diode array substrate, display panel, display device and manufacturing method |
| CN110112320B (en) * | 2018-06-22 | 2022-04-26 | 友达光电股份有限公司 | Light emitting element |
| US11088347B2 (en) | 2018-06-22 | 2021-08-10 | Au Optronics Corporation | Light emitting device |
| CN110112320A (en) * | 2018-06-22 | 2019-08-09 | 友达光电股份有限公司 | Light-emitting component |
| WO2020151064A1 (en) * | 2019-01-25 | 2020-07-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method |
| WO2020206771A1 (en) * | 2019-04-08 | 2020-10-15 | 深圳市华星光电半导体显示技术有限公司 | Oled panel |
| CN110112179A (en) * | 2019-04-08 | 2019-08-09 | 深圳市华星光电半导体显示技术有限公司 | Oled panel |
| US11374197B2 (en) | 2019-04-08 | 2022-06-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Organic light-emitting diode OLED panel having isolator assemblies for preventing light leakage |
| WO2020258984A1 (en) * | 2019-06-25 | 2020-12-30 | 京东方科技集团股份有限公司 | Manufacturing method for display substrate, display substrate, and display device |
| CN110634922A (en) * | 2019-09-24 | 2019-12-31 | 昆山国显光电有限公司 | Display panel and display device |
| CN110911466A (en) * | 2019-11-29 | 2020-03-24 | 京东方科技集团股份有限公司 | Substrate and preparation method thereof, preparation method of mother board, mask and evaporation device |
| US11462492B2 (en) | 2019-11-29 | 2022-10-04 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Substrate and method of manufacturing the same, method of manufacturing motherboard, mask and evaporation device |
| US11552269B2 (en) | 2019-12-20 | 2023-01-10 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and method for preparing the same, and display device |
| CN110993678A (en) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN113437232A (en) * | 2020-03-23 | 2021-09-24 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN113437232B (en) * | 2020-03-23 | 2024-04-23 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111403450A (en) * | 2020-03-26 | 2020-07-10 | 京东方科技集团股份有限公司 | Array substrate, display device and preparation process of array substrate |
| WO2022032741A1 (en) * | 2020-08-11 | 2022-02-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
| CN112002827A (en) * | 2020-09-03 | 2020-11-27 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN112002827B (en) * | 2020-09-03 | 2024-04-23 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN113178462B (en) * | 2021-04-07 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Pixel structure, preparation method thereof and display device |
| CN113178462A (en) * | 2021-04-07 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | Pixel structure, preparation method thereof and display device |
| US11456345B1 (en) | 2021-04-23 | 2022-09-27 | Applied Materials, Inc. | Conductive oxide overhang structures for OLED devices |
| US11751438B2 (en) | 2021-04-23 | 2023-09-05 | Applied Materials, Inc. | Conductive oxide overhang structures for OLED devices |
| CN113707822A (en) * | 2021-08-27 | 2021-11-26 | 成都京东方光电科技有限公司 | Display substrate, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106449726B (en) | 2019-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106449726A (en) | OLED (organic light-emitting diode) display device and manufacture method thereof | |
| US6838819B2 (en) | Full color organic EL display panel, manufacturing method thereof and driving circuit thereof | |
| CN100517792C (en) | Organic light emitting device with high efficiency and method of fabricating the same | |
| CN103839965B (en) | Organic LED display device and its manufacture method | |
| CN106531770A (en) | Organic electroluminescent display panel, manufacturing method thereof and display device | |
| CN108321183B (en) | Organic light-emitting display panel and display device | |
| US9184420B2 (en) | Digitized OLED light source | |
| CN107845667A (en) | A kind of organic electroluminescence display panel, display device and preparation method thereof | |
| CN106783927A (en) | A kind of OLED display and preparation method thereof | |
| JP2001313172A (en) | Organic electroluminescent white light source and manufacturing method of the same | |
| CN101409304A (en) | Organic electro-luminescent display device | |
| CN109378328A (en) | OLED display panel and OLED display | |
| CN100508207C (en) | Dual-plate organic electro-luminescent device and preparation method thereof | |
| CN108780805A (en) | Organic LED display panel and its manufacturing method, display device | |
| CN106856203A (en) | A kind of top emitting display luminescent device and preparation method thereof | |
| CN102208432B (en) | Transmission type colored organic EL (Electro-Luminescence) display device | |
| WO2020155464A1 (en) | Display panel and manufacturing method therefor, and electronic device | |
| JP6802887B2 (en) | Organic EL display device and its manufacturing method | |
| CN112038383A (en) | Display panel, preparation method and display device | |
| CN111710792A (en) | Display panel and preparation method thereof | |
| WO2020238947A1 (en) | Encapsulation cover plate and preparation method of the encapsulation cover plate, display panel and preparation method thereof | |
| CN108321305A (en) | A kind of OLED display panel and display device | |
| WO2021027133A1 (en) | Display panel | |
| CN206322698U (en) | A kind of organic EL display panel and display device | |
| CN109273500A (en) | A kind of oled display substrate, display device and production method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211011 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Micro-Electronics Co.,Ltd. |