CN106449581A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN106449581A CN106449581A CN201510472076.9A CN201510472076A CN106449581A CN 106449581 A CN106449581 A CN 106449581A CN 201510472076 A CN201510472076 A CN 201510472076A CN 106449581 A CN106449581 A CN 106449581A
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- semiconductor device
- semi
- electrode wiring
- resistance value
- metal material
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Abstract
The invention provides a semiconductor device. The semiconductor device comprises an electrode wire, wherein the electrode wire comprises a metal material and a semiconductor material which are in mutual parallel connection in a current flow direction, uplift amount of a resistance value of the metal material and declining amount of a resistance value of the semiconductor material are added together during temperature rising, and change of the resistance value of the electrode wire during temperature rising is reduced. Through the semiconductor device, the resistance value of the electrode wire even under a high temperature environment does not change or changes to a small degree, so conduction capability of the electrode wire can not be reduced, and use of the semiconductor device is not influenced in the high temperature environment.
Description
Technical field
The present embodiments relate to technical field of semiconductors, more particularly, to a kind of semiconductor device with electrode wiring.
Background technology
In semiconductor devices, often carry out electric conduction using electrode wiring (or being referred to as electrode cable etc.)
Stream, generally electrode wiring is made up of metal material, for example copper, aluminum etc..
It should be noted that above the introduction of technical background is intended merely to convenient technical scheme is carried out clear,
Complete explanation, and facilitate the understanding of those skilled in the art to illustrate.Can not be merely because these schemes be at this
Bright background section is set forth and thinks that technique scheme is known to those skilled in the art.
Content of the invention
But, inventor finds：In the case of in semiconductor devices using metal wiring, due to the thermal vibration of atom
Etc. factor, under high temperature, the free electron of metal is scattered, thus the resistance of metal wiring can be led to increase, thus conductive
Ability reduces, the use of impact semiconductor device.
Embodiments provide a kind of semiconductor device.Even if expecting in high temperature environments, the resistance of electrode wiring
Value does not also change or changes less.
One side according to embodiments of the present invention, provides a kind of semiconductor device, described semiconductor device has electricity
Pole distribution, described electrode wiring is configured to the metal material and semi-conducting material company of being parallel to each other on the circulating direction of electric current
Connect；Wherein, by by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
Resistance value slippage is added, and the resistance change when temperature rises for the described electrode wiring is reduced.
Second aspect according to embodiments of the present invention, wherein, connects in described semi-conducting material and described metal material
Be formed in part with intermetallic compounds layer.
The 3rd according to embodiments of the present invention aspect, wherein, the thickness of described intermetallic compounds layer 3 μm with
Under.
4th aspect according to embodiments of the present invention, wherein, described semi-conducting material is silicon single crystal.
5th aspect according to embodiments of the present invention, wherein, described semi-conducting material is polysilicon.
6th aspect according to embodiments of the present invention, provides a kind of semiconductor device, described semiconductor device has electricity
Pole distribution, described electrode wiring is configured to the metal material and semi-conducting material company of being parallel to each other on the circulating direction of electric current
Connect；Wherein, by by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
Resistance value slippage is added, and the resistance change when temperature rises for the described electrode wiring is reduced；And described metal
Material coats described semi-conducting material.
7th aspect according to embodiments of the present invention, wherein, connects in described semi-conducting material and described metal material
Be formed in part with intermetallic compounds layer.
The 8th according to embodiments of the present invention aspect, wherein, the thickness of described intermetallic compounds layer 3 μm with
Under.
9th aspect according to embodiments of the present invention, wherein, described semi-conducting material is silicon single crystal.
Tenth aspect according to embodiments of the present invention, wherein, described semi-conducting material is polysilicon.
The having the beneficial effects that of the embodiment of the present invention：By metal material and semi-conducting material are combined formation electrode
Distribution, even if the resistance value of electrode wiring does not also change or changes less in high temperature environments.Thus, electrode
The conductive capability of distribution will not reduce, and nor affects on the use of semiconductor device at high temperature.
With reference to explanation hereinafter and accompanying drawing, disclose in detail the particular implementation of the embodiment of the present invention, specify this
The principle of bright embodiment can be in adopted mode.It should be understood that embodiments of the present invention in scope not thus
It is restricted.In the range of the spirit and terms of claims, embodiments of the present invention include many changes,
Change and equivalent.
The feature describing for a kind of embodiment and/or illustrating can be in same or similar mode one or more
Use in individual other embodiment, combined with the feature in other embodiment, or substitute in other embodiment
Feature.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or assembly herein when using,
But it is not precluded from the presence of one or more further features, one integral piece, step or assembly or additional.
Brief description
Included accompanying drawing is used for providing the embodiment of the present invention is further understood from, and which constitutes of description
Point, for illustrating embodiments of the present invention, and come together to explain the principle of the present invention with word description.Obviously
Ground, drawings in the following description are only some embodiments of the present invention, for those of ordinary skill in the art,
Without having to pay creative labor, other accompanying drawings can also be obtained according to these accompanying drawings.In the accompanying drawings：
Fig. 1 is the partial schematic diagram of the semiconductor device of the embodiment of the present invention；
Fig. 2 is the schematic diagram that changes with high temperature of resistance value of the electrode wiring of the embodiment of the present invention；
Fig. 3 is another schematic diagram of the electrode wiring of the embodiment of the present invention；
Fig. 4 is another schematic diagram of the electrode wiring of the embodiment of the present invention.
Specific embodiment
Referring to the drawings, by description below, the aforementioned and further feature of the embodiment of the present invention will be apparent from.
In the specification and illustrated in the drawings, specifically disclose only certain exemplary embodiments of this invention, which show and wherein can adopt this
The some embodiments of the principle of bright embodiment are it will thus be appreciated that the invention is not restricted to described embodiment, phase
Instead, the embodiment of the present invention includes whole modifications, modification and the equivalent falling within the scope of the appended claims.
Embodiment 1
The embodiment of the present invention provides a kind of semiconductor device, and Fig. 1 is that the part of the semiconductor device of the embodiment of the present invention is shown
It is intended to.As shown in figure 1, described semiconductor device 100 has electrode wiring 101, this electrode wiring 101 connects respectively
Connect two metal gaskets 102 and 103, can be with shape between this metal gasket 102, electrode wiring 101 and metal gasket 103
Become to have electric current.
In the present embodiment, described electrode wiring 101 is configured to metal material and semi-conducting material in the circulation side of electric current
Be parallel to each other connection upwards.As shown in figure 1, electrode wiring 101 can include metal material 1011 and quasiconductor material
Material 1012, connects on the length direction of electrode wiring 101 in parallel to each other.
Wherein, described metal material 1011 can be the electrically conductive metal of common copper, aluminum, gold etc., permissible
Any one or combination using the electrode cable current material of semiconductor device.Described semi-conducting material 1012 is permissible
It is silicon single crystal or polysilicon, can also be other semi-conducting materials.The invention is not restricted to this, Ke Yigen
Determine specific metal material and semi-conducting material according to practical situation.
In the present embodiment, the resistance value of described metal material becomes big with the rising of temperature, described semi-conducting material
Resistance value reduce with the rising of temperature.By the resistance value of the described metal material when temperature rises is risen
Amount is added with the resistance value slippage of described semi-conducting material, the resistance change when temperature rises for the described electrode wiring
It is reduced.For example, when temperature rises, the change of the resistance value of electrode wiring is less than preset value, or predetermined
Within the scope of.
Fig. 2 is the schematic diagram that changes with high temperature of resistance value of the electrode wiring of the embodiment of the present invention.In the present embodiment
In, when in the case of low temperature, can be by the main circulating current of metal material 1011.At an elevated temperature,
As shown in Fig. 2 the resistance value of metal material 1011 becomes greatly thus being not easy circulating current, but semi-conducting material 1012
Because covalent bonding electron is transferred to the impact of the factors such as conductor, resistance value can diminish thus being easy to circulating current.Cause
In the case that this works as high temperature, can be by the main circulating current of semi-conducting material 1012.
Thus, even if temperature changes, the resistance value of the electrode wiring of the embodiment of the present invention also do not change or
Change is less.Thus, the conductive capability of electrode wiring will not reduce, even if nor affecting on semiconductor device at high temperature
Use.
In the present embodiment, metal can also be partly formed with what described semi-conducting material and described metal material connected
Between compound layer.This intermetallic compounds layer can be alloy-layer, can be made up of existing intermetallic compound, or
Person combines existing alloy and constitutes.Thus, it is possible to make electrode wiring electric conductivity more preferable.
Further, it is also possible to determine the thickness of described intermetallic compounds layer as needed.For example, described intermetallic
The thickness of nitride layer can at 3 μm (microns) below.But the invention is not restricted to this, can be determined according to practical situation
The concrete composition of intermetallic compounds layer and thickness.
It should be noted that Fig. 1 is sandwiched in, with semi-conducting material 1012, the parallel company formed in metal material 1011
It is connected in example, the embodiment of the present invention is illustrated.But the invention is not restricted to this, for example semi-conducting material 1012 He
Metal material 1011 can also not parallel connect.Additionally, the connection of semi-conducting material and metal material can adopt it
His mode.
Fig. 3 is another schematic diagram of the electrode wiring of the embodiment of the present invention, as shown in figure 3, electrode wiring 301 is permissible
In cylinder, the metal material 3011 of outer layer is coated with the semi-conducting material 3012 of internal layer.Or it is also possible to will be interior
Layer is set to metal material and outer layer is set to semi-conducting material.Additionally, metal material 3011 and semi-conducting material 3012
Between can also be formed with intermetallic compounds layer.
Fig. 4 is another schematic diagram of the electrode wiring of the embodiment of the present invention, as shown in figure 4, electrode wiring 401 is permissible
In pancake, metal material 4011 is be arranged in parallel side by side with semi-conducting material 4012.Additionally, metal material 4011
Intermetallic compounds layer can also be formed with and semi-conducting material 4012 between.
It should be noted that Fig. 1, Fig. 3 and Fig. 4 only diagrammatically illustrate the electrode wiring of the embodiment of the present invention, but
The invention is not restricted to this.Additionally, the distribution of metal material and semi-conducting material can also be uneven, such as in edge and electricity
On the multiple sections cut open on the vertical direction of the length direction of pole distribution, the ratio of metal material and semi-conducting material can
With identical can also be different.
From above-described embodiment, by metal material and semi-conducting material are combined formation electrode wiring, pass through
Resistance value slippage by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
It is added, the resistance change when temperature rises for the described electrode wiring is reduced.Thus, even if electric in high temperature environments
The resistance value of pole distribution does not also change or changes less；The conductive capability of electrode wiring will not reduce, in high temperature
Under nor affect on the use of semiconductor device.
Embodiment 2
The embodiment of the present invention provides a kind of semiconductor device, and content same as Example 1 repeats no more.
In the present embodiment, described semiconductor device has electrode wiring, described electrode wiring be configured to metal material and
Semi-conducting material is parallel to each other connection on the circulating direction of electric current；Wherein, by by the described gold when temperature rises
The resistance value ascending amount belonging to material is added with the resistance value slippage of described semi-conducting material, and described electrode wiring is in temperature
Resistance change during rising is reduced.
In the present embodiment, described metal material coats described semi-conducting material.For example as shown in figure 1, quasiconductor material
Material 1012 is sandwiched in metal material 1011；Or as shown in figure 3, in the metal material 3011 of outer layer is coated with
The semi-conducting material 3012 of layer.But the invention is not restricted to this, can also have other structures.
In the present embodiment, metal material and semi-conducting material can connect in parallel to each other, but the invention is not restricted to this.
Further, it is also possible to be formed in part with intermetallic compounds layer what described semi-conducting material and described metal material connected.
Wherein, the thickness of described intermetallic compounds layer below 3 μm, but can the invention is not restricted to this.
In the present embodiment, described semi-conducting material can be silicon single crystal or polysilicon, but the present invention does not limit
In this.
From above-described embodiment, by metal material and semi-conducting material are combined formation electrode wiring, pass through
Resistance value slippage by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
It is added, the resistance change when temperature rises for the described electrode wiring is reduced.Thus, even if electric in high temperature environments
The resistance value of pole distribution does not also change or changes less.The conductive capability of electrode wiring will not reduce, in high temperature
Under nor affect on the use of semiconductor device.
Above in association with specific embodiment, invention has been described, it will be appreciated by those skilled in the art that this
A little descriptions are all exemplary, are not limiting the scope of the invention.Those skilled in the art can be according to this
Inventive principle makes various variants and modifications to the present invention, and these variants and modifications are also within the scope of the invention.
Claims (10)
1. a kind of semiconductor device it is characterised in that described semiconductor device has electrode wiring, join by described electrode
Line is configured to metal material and semi-conducting material and is parallel to each other on the circulating direction of electric current connection；
Wherein, by by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
Resistance value slippage is added, and the resistance change when temperature rises for the described electrode wiring is reduced.
2. semiconductor device according to claim 1 is it is characterised in that in described semi-conducting material and described
What metal material connected is formed in part with intermetallic compounds layer.
3. semiconductor device according to claim 2 is it is characterised in that the thickness of described intermetallic compounds layer
Degree is below 3 μm.
4. the semiconductor device according to any one of claims 1 to 3 is it is characterised in that described quasiconductor material
Material is silicon single crystal.
5. the semiconductor device according to any one of claims 1 to 3 is it is characterised in that described quasiconductor material
Material is polysilicon.
6. a kind of semiconductor device it is characterised in that described semiconductor device has electrode wiring, join by described electrode
Line is configured to metal material and semi-conducting material and is parallel to each other on the circulating direction of electric current connection；
Wherein, by by the resistance value ascending amount of the described metal material when temperature rises and described semi-conducting material
Resistance value slippage is added, and the resistance change when temperature rises for the described electrode wiring is reduced；
And described metal material coats described semi-conducting material.
7. electrode wiring according to claim 6 is it is characterised in that in described semi-conducting material and described gold
What genus material connected is formed in part with intermetallic compounds layer.
8. electrode wiring according to claim 7 is it is characterised in that the thickness of described intermetallic compounds layer
Below 3 μm.
9. the semiconductor device according to any one of claim 6 to 8 is it is characterised in that described quasiconductor material
Material is silicon single crystal.
10. the semiconductor device according to any one of claim 6 to 8 is it is characterised in that described quasiconductor material
Material is polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510472076.9A CN106449581A (en) | 2015-08-04 | 2015-08-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510472076.9A CN106449581A (en) | 2015-08-04 | 2015-08-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449581A true CN106449581A (en) | 2017-02-22 |
Family
ID=59216383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510472076.9A Pending CN106449581A (en) | 2015-08-04 | 2015-08-04 | Semiconductor device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63273347A (en) * | 1987-05-01 | 1988-11-10 | Oki Electric Ind Co Ltd | Resistor |
| CN1171167A (en) * | 1994-11-15 | 1998-01-21 | 佛姆法克特股份有限公司 | Composite intermediate connecting element of microelectronic device and its production method |
| US20050151260A1 (en) * | 2004-01-12 | 2005-07-14 | Jong-Jin Na | Interconnection structure for a semiconductor device and a method of forming the same |
| CN1830042A (en) * | 2003-06-02 | 2006-09-06 | 国际商业机器公司 | Method of fabrication of thin film resistor with 0 TCR |
| WO2007107013A1 (en) * | 2006-03-23 | 2007-09-27 | Microbridge Technologies Inc. | Self-heating effects during operation of thermally-trimmable resistors |
| TW200910388A (en) * | 2007-08-30 | 2009-03-01 | Ind Tech Res Inst | Structure of thin film resistor and method of fabricating the same |
| CN102376404A (en) * | 2010-08-24 | 2012-03-14 | 意法半导体有限公司 | Multi-layer via-less thin film resistor |
-
2015
- 2015-08-04 CN CN201510472076.9A patent/CN106449581A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63273347A (en) * | 1987-05-01 | 1988-11-10 | Oki Electric Ind Co Ltd | Resistor |
| CN1171167A (en) * | 1994-11-15 | 1998-01-21 | 佛姆法克特股份有限公司 | Composite intermediate connecting element of microelectronic device and its production method |
| CN1830042A (en) * | 2003-06-02 | 2006-09-06 | 国际商业机器公司 | Method of fabrication of thin film resistor with 0 TCR |
| US20050151260A1 (en) * | 2004-01-12 | 2005-07-14 | Jong-Jin Na | Interconnection structure for a semiconductor device and a method of forming the same |
| WO2007107013A1 (en) * | 2006-03-23 | 2007-09-27 | Microbridge Technologies Inc. | Self-heating effects during operation of thermally-trimmable resistors |
| TW200910388A (en) * | 2007-08-30 | 2009-03-01 | Ind Tech Res Inst | Structure of thin film resistor and method of fabricating the same |
| CN102376404A (en) * | 2010-08-24 | 2012-03-14 | 意法半导体有限公司 | Multi-layer via-less thin film resistor |
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Application publication date: 20170222 |
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