CN106443854A - Quantum dot film - Google Patents
Quantum dot film Download PDFInfo
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- CN106443854A CN106443854A CN201610968496.0A CN201610968496A CN106443854A CN 106443854 A CN106443854 A CN 106443854A CN 201610968496 A CN201610968496 A CN 201610968496A CN 106443854 A CN106443854 A CN 106443854A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
Abstract
The invention provides a quantum dot film comprising: a silicon dioxide layer, a vanadium dioxide layer, and a quantum dot layer in order from top to bottom; wherein the thickness ratio of the vanadium dioxide layer and the quantum dot layer is 1: 0.3 to 1.8). Compared with the existing film, the quantum dot film provided by the invention has the super-strong blue light barrier function. Through interaction of the vanadium dioxide layer and the quantum dot film doped with metal tungsten among electrodes, the quantum dot film has the function of absorbing blue light on the one hand, and can reflect the blue light on the other hand.
Description
Technical field
A kind of the present invention relates to technical field of membrane, more particularly it relates to quantum dot film.
Background technology
The real title of blue light is called High Energy Visible Lights, that is, high energy visible light.Just one
Plant electromagnetic radiation, the injury possibility to human body for the electromagnetic radiation, be as energy, frequency rises and strengthens in other words.Such as
The cosmic ray that energy is high, frequency is high, wavelength is short is the strongest to the injury of human body, and the ultraviolet of frequency low one-level more also can
The eyes of human body are damaged, and cutaneum carcinoma may be caused.Closest to the part of ultraviolet in the visible ray that " blue light " refers to,
Light frequency in 400-500 nanometer range for these wavelength is more lower slightly than ultraviolet, is energy highest part, color in visible ray
It is then blue and purple, be therefore just commonly called as " blue light ".
The energy, material, information science are guide and the pillars of new technology revolution.As the film of specific form material, oneself
Through becoming the basis of the technology such as microelectronics, information, sensor, optics, Solar use, and extensively penetrate into each of contemporary science and technology
Individual field, and the important component part of the exploitation inherently new and high technology of specific function, the thin-film material of special role.?
New material development some fields most active, the such as synthesis of new material and preparation, the research of surface and interface for material, low-dimensional materials
Exploitation with nanometer technology, amorphous state, the formation of quasi-crystalline state, the anisotropy research of material, the exploration of metastable material, crystal
The behavior of middle foreign atom and microdefect and impact, ion beam, light beam and material surface, the interaction of interface, material
None discord membrane science technology such as exploitation of specific performance is relevant.70～eighties of 20th century is due to vacuum technique, film material
Material is combined with technology and surface physics, promotes developing rapidly of membrane science and technology, has also promoted opening of film product
Send out and application.
At present in the daily electrical equipment used such as mobile phone, iPad, computer all can outside radiating blue light, for the damage of retina
Wound, the anti-blue light product occurring on the market is mostly very different, and people are increasingly dependent on electronic product so that urgently occurring one
Kind can be with protect eyes, the film of anti-blue light occurs, and the present invention is just directed to such problem it is proposed that solution.
Content of the invention
In order to solve the above problems, the invention provides a kind of quantum dot film.
In order to realize foregoing invention purpose, this invention takes technical scheme below：
A kind of quantum dot film is it is characterised in that include successively from top to bottom：Quantum dot layer, titanium dioxide vanadium layers, silica
Layer；
Wherein, the thickness of described titanium dioxide vanadium layers and quantum dot layer is than for 1：(0.3～1.8).
As a kind of preferred technical scheme, the thickness of described titanium dioxide vanadium layers and quantum dot layer is than for 1：(0.6～
1.2).
As a kind of preferred technical scheme, described titanium dioxide vanadium layers are the titanium dioxide vanadium layers of witch culture.
As a kind of preferred technical scheme, in the layer of the vanadium dioxide of described witch culture the doping of tungsten be 5wt%～
8wt%.
As a kind of preferred technical scheme, in described quantum dot layer quantum dot be selected from ZnS, ZnSe, ZnTe, CdS,
One or more of CdSe, CdTe, HgS, HgTe, GaN, GaAs, InP, InAs.
As a kind of preferred technical scheme, described quantum point grain diameter scope is 4～10nm.
As a kind of preferred technical scheme, described quantum point grain diameter scope is 6～8nm.
As a kind of preferred technical scheme, the quality of described quantum dot account for described quantum dot layer quality 30%～
36%.
As a kind of preferred technical scheme, the quality of described quantum dot account for described quantum dot layer quality 32%～
34%.
On the other hand, the present invention provides a kind of tempering film of the mobile phone containing quantum dot film, including above-mentioned quantum dot film.
Compared with prior art, beneficial effects of the present invention：
The invention provides a kind of quantum dot film, the structure that titanium dioxide vanadium layers used are combined with quantum dot layer, dioxy simultaneously
After changing doping metals tungsten in vanadium layers, effectively reduce the phase transition temperature of vanadium dioxide, mobile phone, iPad, computer are same work
When, produce certain heat, reach or neighbouring vanadium dioxide phase transition temperature so that vanadium dioxide is from semiconductor form to metal
After state conversion, there is free electron in vanadium dioxide layer surface.These free electrons are produced mutually with the electronics on quantum dot conduction band
Repulsive interaction, the electronics falling in electron trap reduces, and forms barrier, the electricity being quenched with radiationless form in quantum dot film
Son is same to be reduced, and has reflex for blue light in 400-500 nanometer range.The specific surface area of quantum dot is very big, except tool
Have outside high surface, a large amount of dangling bonds that surface exists and defect will become effective trapping centre of light induced electron or hole.
On the other hand, most of quantum dot film energy gaps will increase it may appear that the blue shift of absorption spectrum and widthization phenomenon.In light
Under irradiation, the quantum dot film that the present invention provides, strong absorption is played to blue light in 400-500 nanometer range in light source,
Exciton absorption peak is occurred on the absorption spectra of film, and additional energy is discharged as heat or light again.Using the present invention
The quantum dot film being provided has the absorption to blue light and reflex, can provide protection to retina using this quantum dot film
People are provided Yishanmen away from blue light by effect.
Another further aspect, the quantum dot film being provided due to the present invention, only when having light and reach the situation of uniform temperature
Lower just can play a role, substantially prolongs use time, be suitable to big industrial production.
Specific embodiment
The embodiment of the participation in the election detailed description being preferable to carry out method of the invention below and inclusion can be more easily understood this
Bright content.Unless otherwise defined, all technology used herein and scientific terminology have common with art of the present invention
The identical implication that technical staff is generally understood that.When there is contradiction, the definition in this specification is defined.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, and all terms used herein (include technology art
Language and scientific terminology) there is general understanding identical meaning with the those of ordinary skill in art of the present invention.Also should
It is understood by, those terms defined in such as general dictionary should be understood that the meaning having with the context of prior art
The consistent meaning of justice, and unless defined as here, will not be explained with idealization or excessively formal implication.
A kind of quantum dot film, includes from top to bottom successively：Quantum dot layer, titanium dioxide vanadium layers, silicon dioxide layer；
Wherein, the thickness of described titanium dioxide vanadium layers and quantum dot layer is than for 1：(0.3～1.8).
Quantum dot layer：
In the quantum dot layer of the present invention, primary raw material is quantum dot.
Term quantum dot (Quantum Dot) is also called semiconductor nanocrystal (Semiconductor
Nanocrystals), it is that a kind of radius is less than or the novel semi-conductor nano material close to exciton Bohr radius, there is uniqueness
Light, sound, electricity, magnetic, catalysis, the property such as chemism, mainly by II-VI race (as MgS, CdSe, ZnTe, HgSe etc.) and
The homogeneous or core/shell structure (as CdS/HgS/CdS etc.) of III-V race (as GaAs, InGaAs, InP, InAs etc.) element composition
Nano particle.
Quantum size effect:When body phase material size reduction extremely can be comparable with exciton radii, due to carrier
Motion is limited in space, and energy occurs quantization, and its electronic structure can be changed into discrete energy level by band from continuous.By control
The shape of quantum dot processed, structure and size are it is possible to be conveniently adjusted its energy gap width, the size of exciton bind energy and exciton
The electronic state such as energy blue shift.Being gradually reduced with quantum dot size, blue-shifted phenomenon in the optical absorption spectra of quantum dot.Chi
Very little less, then spectrum blue-shifted phenomenon is more notable.
Quantum dot preferably is selected from ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgTe, GaN, GaAs, InP, InAs
One or more.More preferably CdS/CdSe, ZnS/ZnSe.
Described quantum point grain diameter ranges preferably from 4～10nm, more preferably 6～8nm.
The thickness ratio preferably 1 of titanium dioxide vanadium layers of the present invention and quantum dot layer：(0.3～1.8)；More preferably
1：(0.6～1.2).
The quality of described quantum dot account for described quantum dot layer quality be preferably 30%～36%, more preferably 32%～
34%.
The preparation method of quantum dot layer is as follows：
ITO substrate is used ammoniacal liquor, water, ethanol successively, is cleaned by ultrasonic, being then immersed in volume ratio is 1:1 ethanol/hydroxide
Sodium (1mo1 L-1) in 10～25min, to obtain the electronegative ITO in surface, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6～7.First by surface
After reason, electronegative ITO, successively in PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2Blow
Dry；Or electronegative ITO, successively in PDDA, PSS, PDDA, impregnates 10～25min in quantum dot solution after being surface-treated, and
Deionized water drip washing respectively, N2Dry up.Form required quantum dot layer.
Titanium dioxide vanadium layers：
Titanium dioxide vanadium layers primary raw material of the present invention is vanadium dioxide.
Vanadium (V), atomic number is 23, is 3d group 4 transition metal element, has multiple oxide forms, common are
VO、VO2、V2O3And V2O5Etc. several oxides.Wherein vanadium dioxide (VO2), because its inversion temperature (- 68 DEG C) is near room temperature
Cause and widely gaze at.
When temperature reaches more than 68 DEG C, vanadium dioxide crystal is cubic rutile structure, is designated as VO2(R), space group type
For P42/ mnm (14), when temperature is less than 68 DEG C, vanadium dioxide crystal is monocline, is designated as VO2(M), space group type is
P21/C(14).
When temperature is less than 340K, vanadium dioxide assumes M phase monocline, has the energy gap of 0.7eV, this is for micro-
Ripple, radio frequency, infrared and visible ray all have very high transmitance；When temperature is higher than 340K, vanadium dioxide assumes R phase knot
Structure, at this moment forbidden band become conduction band, belong to metal phase, absorb and microwave reflection, radio frequency, infrared and visible light wave range effect increase
By force, transmitance reduces.The vanadium dioxide change that this transmitance reduces before and after phase transformation is particularly evident for infrared band.
The change of temperature leads to electronic structure to change can to absorb or reflect the quilt of dissimilar radiation quality
Referred to as thermochromism, the change of extra electric field or the such property causing under the light irradiation of certain wavelength in the same manner is claimed respectively
For electrochromism and photochromic.Just there is when vanadium dioxide film undergoes phase transition electroluminescent, thermic and photochromic property.By
Film color change is made to have green, yellow, golden brown etc. in the difference of preparation method and film thickness difference.
Tungsten-doped vanadium dioxide：
In the present invention, doping metals W can effectively reduce the phase transition temperature of vanadium dioxide to 25 DEG C～35 DEG C.
In the layer of the vanadium dioxide of described witch culture, the doping of tungsten is preferably 5wt%～8wt%, more preferably
6wt%.
The calculating of the doping of tungsten is with the quality of vanadium dioxide in titanium dioxide vanadium layers for calculating standard.
The preparation of tungsten-doped vanadium dioxide raw material：
Synthesis step：By Na2WO4·2H2O is dissolved into sodium tungstate solution, then drops to nitric acid with 2 drops/sec of speed molten
In liquid (pH value determination is about 0.8), must be stirred vigorously during dropping, continue stirring 15-20 minute after dripping off, filter, then
Configuration dilute nitric acid solution, washs precipitation with this solution, and reaction finishes washs precipitation with ethanol solution, anhydrous ether solution respectively.
To precipitate and dry as in baking oven, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
Chemical principle is：
Na2WO4·2H2O+2HNO3→WO3·1.2H2O+2NaNO3+1.8H2O
By V2O5It is dissolved in the NaOH solution that concentration is 5M, stirs after becoming colorless to solution, it is dilute for being successively slowly dropped into concentration
The H that HCl solution and concentration are2O2Solution, stirs and switchs to after navy blue after solution, obtains the solution that pH is about 1.Chemistry is anti-
Answer principle as follows：
6NaOH+V2O5→2Na3VO4+3H2O
2Na3VO4+H2O2+ 10HCl (dilute) → 2VOCl2+6NaCl+6H2O+O2↑
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weigh the made white tungsten of appropriate amount
Acid.Solution is loaded in 100ml autoclave and seals, after uniform temperature reaction a period of time, be cooled to room temperature, centrifugation point
From, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in dry, grind in agate mortar
Wear into uniform fine powder.
The preparation method of titanium dioxide vanadium layers：
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.By the quantum dot film after the completion of annealing
Using traditional coating process, in outer layer applying silicon oxide film, obtain final product.
Another aspect of the invention provides a kind of mobile phone comprising quantum dot film tempering film.
The mobile phone preparation of tempering film, will by the way of melting plated film in the upper surface of tempering film in reference prior art
The quantum dot film preparing is combined with tempering film, and the quantum dot film realizing providing the present invention is applied on tempering film.
At present, it is concentrated mainly on infrared and UV light region, utilization by the use of quantum dot film as the absorption for light
Blue shift and the red shift characteristic of son point film absorption spectrum, people have been manufactured that various ultraviolet absorpting films and infrared anti-
Penetrate film, and obtain application in daily production, life.But the absorption for blue light and reflection still become prior art so far
Obstacle, the present invention provide quantum dot film comprise quantum dot layer and the composite construction of titanium dioxide vanadium layers, in titanium dioxide vanadium layers
After doping metals tungsten, reduce the phase transition temperature of vanadium dioxide, mobile phone, iPad, computer, while work, produce certain heat
Amount, reach or neighbouring vanadium dioxide phase transition temperature so that vanadium dioxide from semiconductor form to metallic state conversion after, titanium dioxide
There is free electron in vanadium layers surface.A little free electrons produce repulsive interaction with the electronics on quantum dot conduction band, fall into electronics
Electronics in trap reduces, and forms barrier in quantum dot film, and the electronics being quenched with radiationless form is equally reduced, for
In 400-500 nanometer range, blue light has reflex.
On the other hand, under the irradiation of light, most of quantum dot film energy gaps will increase it may appear that absorption spectrum
Blue shift and widthization phenomenon.The specific surface area of quantum dot is very big, and in addition to having high surface, what surface existed hangs in a large number
Key and defect will become effective trapping centre of light induced electron or hole.The quantum dot film that the present invention provides, to 400- in light source
In 500 nanometer range, the energy of blue light plays strong absorption, and exciton absorption peak occurs in the absorption spectra of film, and handle
Additional energy discharges as heat or light again.Absorption to blue light and anti-is had using quantum dot film provided by the present invention
Penetrate effect, protective effect can be provided to retina using this quantum dot film, healthy of great advantage to people.
Because the quantum dot film that the present invention provides is that could have after vanadium dioxide has metallic character at a certain temperature
Play the role of to intercept blue light, thus can extend the service life of film, and be suitable to big industrial production, save production cost, fall
Low-loss.
With reference to specific embodiment, the present invention is described in further detail.
It is commercially available that raw material of the present invention does not have specified otherwise to be.
Embodiment 1
Part Experiment reagent：PDDA (cationic polyelectrolyte diallyl dimethyl ammoniumchloride, 35%, Mw<
100000Aldrich)；
PSS (anionic polyelectrolyte kayexalate, 30%, Mw ≈ 70000, Aldrich)；
Experimental water is high purity water.
Instrument：KQ218 type ultrasonic washing instrument (Kunshan Ultrasonic Instruments Co., Ltd.)；
P-2500 sepectrophotofluorometer (Japanese Hitachi company)；
DELTA 320 type pH meter (Mettler Toledo company of Switzerland)；
RST electrochemical workstation (Suzhou Rui Site Instrument Ltd.).
Tin indium oxide (ITO) transparent conducting glass (1.1mm is thick, and resistance is 100 Ω) (the limited public affairs of Condar gram Optoelectronics Technology
Department).
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, CdSe/CdS quantum dot (particle diameter is 5nm) is molten
25min is impregnated in liquid, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for described quantum dot layer quality
35%.Form required quantum dot film, the thickness controlling quantum dot layer is 12nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10.12% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH about
Solution for 1.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 5wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 2
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, in PSS, PDDA, InP quantum dot (particle diameter is 4nm) solution
Dipping 25min, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for the 30% of described quantum dot layer quality.Shape
Become required quantum dot film, the thickness controlling quantum dot layer is 18nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10.12% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH about
Solution for 1.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 6wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 3
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, ZnS/ZnSe quantum dot (particle diameter is 6nm) is molten
25min is impregnated in liquid, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for described quantum dot layer quality
36%.Form required quantum dot film, the thickness controlling quantum dot layer is 3nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10.12% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH about
Solution for 1.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 7wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 4
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, in PSS, PDDA, ZnTe quantum dot (particle diameter is 8nm) solution
Dipping 25min, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for the 32% of described quantum dot layer quality.Shape
Become required quantum dot film, the thickness controlling quantum dot layer is 6nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH and is about 1
Solution.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 5
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, CdSe/CdS quantum dot (particle diameter is 10nm)
25min is impregnated in solution, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for described quantum dot layer quality
34%.Form required quantum dot film, the thickness controlling quantum dot layer is 15nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH and is about 1
Solution.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 6
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, in PSS, PDDA, GaN quantum dot (particle diameter is 6nm) solution
Dipping 25min, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for the 33% of described quantum dot layer quality.Shape
Become required quantum dot film, the thickness controlling quantum dot layer is 14nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH and is about 1
Solution.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 7
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, CdSe/CdS quantum dot (particle diameter is 4nm) is molten
25min is impregnated in liquid, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for described quantum dot layer quality
36%.Form required quantum dot film, the thickness controlling quantum dot layer is 11nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH and is about 1
Solution.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Embodiment 8
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, in ZnS quantum dot (particle diameter is 7nm) solution
Dipping 25min, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for the 34% of described quantum dot layer quality.Shape
Become required quantum dot film, the thickness controlling quantum dot layer is 11nm.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into dense
Spend the H being 10% for 10% dilute HCl solution and concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH and is about 1
Solution.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating makes plating apply quantum dot layer ITO underlayer temperature for 200 DEG C, vacuum 5x10-3,
Evaporation time is the vanadium dioxide of the W that adulterated in substrate surface evaporation with vacuum coating equipment under conditions of 420s, through annealing
After obtain quantum dot film, the thickness of titanium dioxide vanadium layers is 10nm.
This experiment carries out in the air annealing using KSLI100X type sintering furnace to film.
Quantum dot film after the completion of annealing, using traditional coating process, in outer layer applying silicon oxide film, obtains final product.
Plated film is carried out on safety glass using coating technique in prior art.
Comparative example 1
Using solvent as described in Example 1 and instrument
A. quantum dot layer
By ITO substrate (using specification be 1.1mm, perpendicularity≤0.1%) use 100ml ammoniacal liquor, 100ml water, 100ml successively
Ethanol, is cleaned by ultrasonic, and being then immersed in volume ratio is 1:1 ethanol/NaOH (1mo1 L-1) in 15min, to obtain surface
Electronegative ITO, taking-up is cleaned with water, N2Dry up standby.
PDDA and PSS is all configured to 0.01mo1 L-1Solution, the pH of quantum dot solution is adjusted to 6.After being first surface-treated
Electronegative ITO, successively in 100ml PDDA solution, impregnates 15min in quantum dot solution, and deionized water drip washing respectively, N2
Dry up；Or after being surface-treated electronegative ITO successively in PDDA, PSS, PDDA, CdSe/CdS quantum dot (particle diameter is 5nm) is molten
25min is impregnated in liquid, and deionized water drip washing respectively, N2Dry up.The quality of quantum dot accounts for described quantum dot layer quality
34%.Form required quantum dot film, the thickness controlling quantum dot layer is 18nm.In outer layer applying silicon oxide film, obtain final product.
Plated film is carried out on safety glass using coating technique in prior art.
Comparative example 2
Using solvent as described in Example 1 and instrument.
B. titanium dioxide vanadium layers
The preparation of tungsten-doped vanadium dioxide raw material.
Synthesis step:By 10g Na2WO4·2H2O is dissolved into 60mL sodium tungstate solution, is then dripped with 2 drops/sec of speed
It is 1mo1 L to 100mL concentration-1Salpeter solution (pH value determination is about 0.8) in, must be stirred vigorously during dropping, drip off
Continue stirring 20 minutes afterwards, filter, then configuration 150mL dilute nitric acid solution (red fuming nitric acid (RFNA) containing 0.2mL), heavy with the washing of this solution
Form sediment, finish and wash precipitation with 50mL ethanol solution, 12mL anhydrous ether solution respectively.To precipitate as warp in 100 DEG C of baking ovens
4.0h about dry, obtain final product slightly yellow white tungstic acid powder.With WO3Meter, yield is about 96%.
By 18 V2O5It is dissolved in the NaOH solution that 35ml concentration is 5M, stir after becoming colorless to solution, be successively slowly dropped into
Concentration is the H that 10% dilute HCl solution is 10% with concentration2O2Solution, stirs and switchs to after navy blue after solution, obtains pH about
Solution for 1.
Instill the NaOH solution of 1M wherein until solution produces suspension and stops titration, weighing makes the doping of tungsten be
The made white tungstic acid of 8wt%.Solution is loaded in 100mL autoclave and seals, after 50 DEG C of reaction 2h, be cooled to room temperature, from
The heart separate, repeatedly wash through absolute ethyl alcohol and deionized water, temperature be 40 DEG C air dry oven in drying, in agate mortar
Middle grinding uniformly fine powder.
With above-mentioned powder as raw material, heating ITO underlayer temperature is 200 DEG C, vacuum 5x10-3, evaporation time is 420s
Under conditions of be deposited with the vanadium dioxide of doping W in substrate surface with vacuum coating equipment, the thickness of titanium dioxide vanadium layers is 10nm.Outside
Layer applying silicon oxide film, obtains final product.
Embodiment and comparative example 1,2 all carry out plated film using coating technique in prior art on safety glass,
Comparative example 3
Commercially available blue-light resistant lens.
Comparative example 4
Commercially available ITO material, the same above example of specification.
Performance test
Blue light transmitance：Using SDR852 blue light transmission measurement instrument, coated toughened glass is tested, parallel testing
10 times, average.
Fragmentation status：Execution GB15763.2-2005.Every piece of style minimum fragment in any 50mm × 50mm region
Number 30, its of length no more than 75mm is qualified.
Canister shot bag impact property：Execution GB15763.2-2005.During glass breaking, 10 pieces of chip mass of maximum of every style
Summation must not exceed and be equivalent to sample 65m2The quality of area；When scatter-load bag height of drop is 1200mm, style is not destroyed.Full
It is qualified enough to upper 2 points.
Surface stress：GB15763.2-2005 safety glass national standard.Surface stress is more than 90MPa.
Thermal shock resistance：GB15763.2-2005 safety glass national standard.Resistance to 200 DEG C of temperature difference are not destroyed.
Table 1 the performance test results
Obtained as drawn a conclusion with the performance test of comparative example by the embodiment of table 1：
The quantum dot film that the present invention provides, has the effect of superpower obstruct blue light, by gold compared to existing film
Belong to tungsten-doped vanadium dioxide layer with quantum dot film by interelectric interaction, on the one hand there is the effect absorbing blue light, separately
On the one hand there is the effect of reflection blue light.
On the other hand, under the irradiation of light, most of quantum dot film energy gaps will increase it may appear that absorption spectrum
Blue shift and widthization phenomenon.The specific surface area of quantum dot is very big, and in addition to having high surface, what surface existed hangs in a large number
Key and defect will become effective trapping centre of light induced electron or hole.The quantum dot film that the present invention provides, to 400- in light source
In 500 nanometer range, the energy of blue light plays strong absorption, and exciton absorption peak occurs in the absorption spectra of film, and handle
Additional energy discharges as heat or light again.Absorption to blue light and anti-is had using quantum dot film provided by the present invention
Penetrate effect, protective effect can be provided to retina using this quantum dot film.
Aforesaid embodiment is merely illustrative, for explaining some features of the method for the invention.Appended right
Require be intended to require it is contemplated that to the greatest extent can example the embodiment of the selection of combination explanation.Therefore, the purpose of applicant is
Appended claim is not by the selectional restriction of the example of the feature of the explanation present invention.Some numerical value used in the claims
Scope also includes subrange within, and the change in these scopes also should be construed to by appended in the conceived case
Claim covers.The wide scope of energy, and embodiments as presented herein is only according to all possible embodiment.
Claims (10)
1. a kind of quantum dot film is it is characterised in that include successively from top to bottom：Quantum dot layer, titanium dioxide vanadium layers, silica
Layer；
Wherein, the thickness of described titanium dioxide vanadium layers and quantum dot layer is than for 1：(0.3～1.8).
2. quantum dot film as claimed in claim 1 is it is characterised in that described titanium dioxide vanadium layers with the thickness ratio of quantum dot layer are
1：(0.6～1.2).
3. quantum dot film as claimed in claim 1 is it is characterised in that described titanium dioxide vanadium layers are the vanadium dioxide of witch culture
Layer.
4. quantum dot film as claimed in claim 3 it is characterised in that in the layer of the vanadium dioxide of described witch culture tungsten doping
Measure as 5wt%～8wt%.
5. quantum dot film as claimed in claim 1 it is characterised in that in described quantum dot layer quantum dot be selected from ZnS, ZnSe,
One or more of ZnTe, CdS, CdSe, CdTe, HgS, HgTe, GaN, GaAs, InP, InAs.
6. quantum dot film as claimed in claim 5 is it is characterised in that described quantum point grain diameter scope is 4～10nm.
7. quantum dot film as claimed in claim 6 is it is characterised in that described quantum point grain diameter scope is 6～8nm.
8. quantum dot film as claimed in claim 5 is it is characterised in that the quality of described quantum dot accounts for described quantum dot layer quality
30%～36%.
9. quantum dot film as claimed in claim 8 is it is characterised in that the quality of described quantum dot accounts for described quantum dot layer quality
32%～34%.
10. a kind of mobile phone tempering film containing quantum dot film is weighed it is characterised in that including claim 1～9 any one such as
Profit requires described quantum dot film.
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| CN108977050A (en) * | 2018-06-27 | 2018-12-11 | 安徽屹珹新材料科技有限公司 | A kind of anti-blue light hardening bath and anti-blue light cured film |
| CN109337673A (en) * | 2018-11-12 | 2019-02-15 | 中国科学院上海硅酸盐研究所 | A kind of hypovanadic oxide-based fluorescence composite material and its application |
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Address after: 239299 South of Liming Road and East of Jingyi Road in Lai'an County Economic Development Zone, Chuzhou City, Anhui Province (office location: Second Floor Assistant Center of Development Zone Management Committee) Patentee after: Anhui Shijia Industry Co.,Ltd. Address before: 239299 South of Liming Road and East of Jingyi Road in Lai'an County Economic Development Zone, Chuzhou City, Anhui Province (office location: Second Floor Assistant Center of Development Zone Management Committee) Patentee before: ANHUI XINHE FUNCTIONAL MEMBRANE TECHNOLOGY Co.,Ltd. |
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Denomination of invention: A Quantum Dot Film Effective date of registration: 20230818 Granted publication date: 20190212 Pledgee: Lai An county Jinan financing Company limited by guarantee Pledgor: Anhui Shijia Industry Co.,Ltd. Registration number: Y2023980052730 |