CN106410606B - A kind of epitaxial structure of Distributed Feedback Laser and preparation method thereof - Google Patents
A kind of epitaxial structure of Distributed Feedback Laser and preparation method thereof Download PDFInfo
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- CN106410606B CN106410606B CN201610514060.4A CN201610514060A CN106410606B CN 106410606 B CN106410606 B CN 106410606B CN 201610514060 A CN201610514060 A CN 201610514060A CN 106410606 B CN106410606 B CN 106410606B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
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Abstract
The present invention discloses a kind of epitaxial structure of Distributed Feedback Laser, including InP substrate, be disposed with from bottom to top in InP substrate cushion, lower limit layer, lower waveguide layer, active layer, on ducting layer, upper limiting layer, second buffer layer, corrosion barrier layer, covering and grating layer；Secondary epitaxy layer is provided with grating layer, the secondary epitaxy layer includes grating covering, potential barrier graded bedding and ohmic contact layer from bottom to top, and the grating covering includes grating coating and transition zone, and the grating overburden cover is more than grating layer thickness.Invention additionally discloses the preparation method of above-mentioned Distributed Feedback Laser epitaxial structure, its grating coating is passed through the sccm of 850sccm 950 PH simultaneously using low temperature, pulsed slow growth3Gas, suppress grating layer P volatilization；Transition zone is using high temperature, fast-growth.The present invention can prevent grating layer to be etched, and lift Distributed Feedback Laser epitaxial structure quality, reduce the application cost of Distributed Feedback Laser.
Description
Technical field
The present invention relates to Distributed Feedback Laser manufacturing technology field, the epitaxial structure of especially a kind of Distributed Feedback Laser and its preparation
Method.
Background technology
Optical communication network uses the carrier that light transmits as signal, compared to using telecommunication of the copper cable as transmission medium
Network, speed, capacity and the antijamming capability of information interconnection obtain significant raising, thus are used widely.Semiconductor laser
Device is the principal light source of optical communication network, including fabry-Perot type laser（FP lasers）, distributed feedback laser（DFB）
And vertical cavity surface emitting laser（VCSEL）Three types.Wherein, Distributed Feedback Laser sets up Prague light inside semiconductor
Grid, the selection of single longitudinal mode is realized by the distributed feed-back of light, there is high speed, narrow linewidth and dynamic single longitudinal mode operation characteristic, and DFB
Laser can suppress the moding of common FP lasers in broader operating temperature and current margin, significantly improve
The noise characteristic of device, has a wide range of applications in optical communication field.
The Distributed Feedback Laser wavelength of optic communication is generally 1310 nm and 1550 nm, typically uses InP as growth substrates,
AlGaInAs or InGaAsP SQW is used as active layer.The making of DFB gratings typically uses holographic lithography or electron beam light
The method at quarter, made in InGaAsP grating layers and width about 200nm, high about 40-50nm grating layer, then in grating are formed on layer
Layer grows secondary epitaxy layer above.Because the equilibrium vapour pressure of P in grating layer is higher, secondary epitaxy layer is carried out on grating layer
In growth course, P can be evaporated and taken away by carrier gas, migrate In atoms, and the thickness and component for causing grating layer are sent out
Changing.In addition, lattice changes device surface can be caused to form highdensity point defect, so as to deteriorate device performance.
Taken away, prevent in heating and higher temperature growth processes of the grating layer before diauxic growth by carrier gas in order to suppress P volatilizations
It is etched, in the prior art using low temperature（Usual growth temperature is not higher than 550 °C）Technique grows secondary epitaxy layer, to avoid light
Grid are etched, but second-rate by the secondary epitaxy layer material of low-temperature epitaxy, can equally influence DFB performance.Using
The growth conditions of MOCVD growth DFB secondary epitaxy layers is very harsh, and causing DFB to make, yield is relatively low, and making and application cost occupy
It is high not under.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of epitaxial structure of Distributed Feedback Laser, and it can prevent grating layer quilt
Etching, Distributed Feedback Laser epitaxial structure quality is lifted, reduce the application cost of Distributed Feedback Laser.
To reach above-mentioned purpose, the technical scheme is that：A kind of epitaxial structure of Distributed Feedback Laser, including InP linings
Bottom, be disposed with from bottom to top in InP substrate cushion, lower limit layer, lower waveguide layer, active layer, on ducting layer, the upper limit
Preparative layer, second buffer layer, corrosion barrier layer, covering and grating layer；Secondary epitaxy layer is provided with grating layer, it is described secondary
Epitaxial layer includes grating covering, potential barrier graded bedding and ohmic contact layer from bottom to top, and the grating covering includes light from bottom to top
Gate overlap and transition zone, the grating overburden cover are more than grating layer thickness.
It is preferred that the grating overburden cover is bigger 2nm-6nm than grating layer thickness；
It is preferred that the average growth rate of the grating coating is 0.002 nm/s-0.003 nm/s, the grating covering
The growth temperature of layer is 530-570 °C；The average growth rate of the transition zone is 0.15 nm/s-0.55 nm/s, the mistake
The growth temperature for crossing layer is 650-690 °C.Grow down, can obtain preferably in low temperature, at a slow speed so due to the grating coating
Crystal mass and ensure that grating will not be etched, and the transition zone is at high temperature and faster grown, secondary epitaxy layer
Quality also can preferably be protected.
It is preferred that the thickness of the grating layer is 40 nm；Screen periods are 210nm in grating layer；The grating coating
Thickness is 42.3 nm.
It is preferred that the cushion is layer of InP；The lower limit layer is AlInAs layers；The lower waveguide layer is AlGaInAs
Layer；The active layer is AlGaInAs layers；The upper ducting layer is AlGaInAs layers；The upper limiting layer is AlInAs layers；Institute
It is layer of InP to state second buffer layer, and the corrosion barrier layer is wavelength 1100nm InGaAsP layer；The covering is layer of InP, institute
It is wavelength 1100nm InGaAsP layers to state grating layer；The grating coating is layer of InP, and the transition zone is layer of InP；The gesture
Base graded bedding is InGaAsP layer；The ohmic contact layer is InGaAs layers.
Further, the potential barrier graded bedding includes the first potential barrier graded bedding and the second potential barrier graded bedding from bottom to top, and first
Potential barrier graded bedding is made up of the InGaAsP layer that wavelength is 1300nm, InGaAsP of the second potential barrier graded bedding by wavelength for 1500nm
Layer is formed.
The epitaxial structure of the present invention includes grating coating and transition zone, light due to the grating covering in secondary epitaxy layer
The thickness of gate overlap is more than grating layer, and grating coating can give grating layer to provide preferable protective effect, particularly allows institute
State grating coating to grow in the case where low temperature, pulsed wait a moment speed, preferable crystal mass can be obtained and ensure that grating will not be carved
Erosion, and the thickness of grating coating is more than grating layer, beneficial to being grown to grating transition zone by the way of different condition, it is ensured that light
Gate layer will not be etched, and allow the transition zone at high temperature and faster grow, and the quality of secondary epitaxy layer preferable can also obtain
To guarantee.Distributed Feedback Laser epitaxial structure quality is improved using this structure, reduces the application cost of Distributed Feedback Laser.
The present invention also provides a kind of preparation method of the epitaxial structure of Distributed Feedback Laser, and it had both kept grating Rotating fields group
Divide and do not changed with thickness, the secondary epitaxy layer of high quality can be grown again, improve Distributed Feedback Laser epitaxial structure quality and preparation
Yield.
To reach above-mentioned purpose, the technical scheme is that：A kind of preparation method of Distributed Feedback Laser epitaxial structure, bag
Include following steps：
Step 1: InP substrate is put into from InP as substrate in MOCVD system responses room, with H2For carrier gas,
Respective reaction source gas is passed through, the ripple under grown InP cushion, AlInAs lower limit layers, AlGaInAs successively above the InP substrate
Conducting shell, AlGaInAs active layers, the upper ducting layers of AlGaInAs, AlInAs upper limiting layers, InP second buffer layers, InGaAsP corrosion
Barrier layer, InP coverings and InGaAsP preparing grating layers；
Step 2: taking out the semi-finished product epitaxial wafer that step 1 growth is completed, holographic lithography is used on semi-finished product epitaxial wafer
Or the mode of beamwriter lithography forms grating layer on InGaAsP preparing grating layers；
Step 3: step 2 made grating layer semi-finished product epitaxial wafer cleaning after place into MOCVD system responses
Room, the PH that flow is 850sccm -950 sccm is passed through to reative cell3Gas allows reative cell liter to protect semi-finished product epitaxial wafer
Temperature is to 530 DEG C -570 DEG C, then in t1The TMIn that flow is 8 sccm -15 sccm is passed through in -8 seconds=1 second toward reative cell to react
The forming core layer of source gas grown InP grating coating on grating layer, then in t2Closed in -5 seconds=2 seconds and enter reative cell
TMIn reaction source gas, provide the time to the atomic migration in the forming core layer of grown InP grating coating, it is stable to have grown
The forming core layer of InP grating coatings, followed by t3It is 8 sccm -15 sccm to be passed through flow toward reative cell in -24 seconds=12 seconds
TMIn reaction source gas continued growth InP grating coatings on the forming core layer of the InP grating coatings grown matrix
Layer, followed by t4The TMIn reaction source gas into reative cell is closed in -5 seconds=2 seconds, stable grown InP grating below covers
The base layer of layer, so with t1+t2+t3+t3= t5As a growth cycle cycling deposition InP gratings coating to InP gratings
The gross thickness of coating is more than the growth of stopping InP grating coatings after grating layer thickness 2nm-6nm；
Step 4: allowing the temperature of reative cell to be increased to 650 DEG C -690 DEG C, PH is kept3The flow that gas is passed through reative cell is
850sccm -950 sccm, the TMIn reaction source gas that flow is 600sccm -800sccm then is passed through toward reative cell,
Grown InP transition zone on the InP grating coatings of completion is grown, InP transition zones stop growing after growing to setting thickness；
Step 5: it is 650-690 DEG C to keep reaction chamber temperature, with H2For carrier gas, respective reaction source gas is passed through, is being grown
InGaAsP potential barriers graded bedding and InGaAs ohmic contact layers are grown successively on the InP transition zones of completion.
It is preferred that in the step 3, reative cell PH is passed through3The flow of gas is 900 sccm, and reative cell is warming up to 550 DEG C,
The flow for being passed through reative cell TMIn reaction source gas is 10 sccm, while TMIn reaction source gas is passed through toward reative cell also
DeZn dopant gas of the flow as 0.36sccm, t are passed through using double dilution pipelines1For 2 seconds, t2For 2 seconds, t3For 15 seconds, t4For 2
Second, the average growth rate of InP grating coatings is 0.00228 nm/s；In the step 4, the temperature of reative cell is allowed to raise
To 670 DEG C, the flow for being passed through reative cell TMIn reaction source gas is 720sccm, and TMIn reaction source gas is being passed through toward reative cell
While also using it is double dilution pipelines be passed through DeZn dopant gas of the flow as 37.5sccm, the average life of the InP transition zones
Long speed is 0.2 nm/s；In the step 5, the temperature of reative cell remains 670 DEG C.
Further, in the step 3, also with double dilution pipelines while TMIn reaction source gas is passed through toward reative cell
It is passed through the DeZn dopant gas that flow is 0.25-0.50sccm；In the step 4, TMIn reaction sources are being passed through toward reative cell
Also DeZn dopant gas of the flow as 30-50sccm is passed through while gas using double dilution pipelines.
Further, in the step 5, InGaAsP potential barrier graded beddings are grown to a length of 1300nm's of Mr.'s long wave
InGaAsP potential barrier graded beddings, the rear a length of 1500nm of growing wave InGaAsP potential barrier graded beddings.
Preparation method of the present invention is divided into two steps during secondary epitaxy layer is grown, first slow using low temperature, pulsed
The long grating coating of fast-growing, while further through the high partial pressures PH that flow is 850sccm -950 sccm3Gas is protected, anti-
Answer the PH that high partial pressures are used in the temperature-rise period of room3Air-flow can effectively suppress P volatilization；And pulsed slow growth grating covers
Layer, grating coating stacking fault and room are less, are advantageous to improve the crystal mass of secondary epitaxy layer.And grating coating is given birth to
After the completion of length, transition zone and below secondary epitaxy layer are next grown with high temperature, immediate mode again, by grating coating and transition
The growth quality for the grating covering that layer combines can be protected, and be advantageous to lift Distributed Feedback Laser epitaxial structure quality and system
Standby yield, reduce the application cost of Distributed Feedback Laser.
Brief description of the drawings
Fig. 1 is the epitaxial structure schematic diagram of Distributed Feedback Laser of the present invention；
Fig. 2 is the epitaxial structure schematic diagram that preparation method step 1 of the present invention grows completion；
Fig. 3 is the epitaxial structure schematic diagram that preparation method step 2 of the present invention grows completion；
Fig. 4 is the epitaxial structure schematic diagram that preparation method step 3 of the present invention grows completion；
Fig. 5 is the epitaxial structure schematic diagram that preparation method step 4 of the present invention grows completion；
Fig. 6 is growth grating coating pulsed growth time chart corresponding with reaction chamber temperature.
Embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Shown in Fig. 1, a kind of epitaxial structure of Distributed Feedback Laser, including InP substrate 1, in InP substrate 1 from bottom to top successively
It is provided with cushion 2, lower limit layer 3, lower waveguide layer 4, active layer 5, upper ducting layer 6, upper limiting layer 7, second buffer layer 8, corruption
Lose barrier layer 9, covering 10 and grating layer 11；Secondary epitaxy layer is provided with grating layer 11, the secondary epitaxy layer is under
Include grating covering 12, the first potential barrier graded bedding 13, the second potential barrier graded bedding 14 and ohmic contact layer 15, the light on and successively
Grid covering 12 includes grating coating 121 and transition zone 122 from bottom to top, and the thickness of grating coating 121 is more than grating layer
11 thickness.
It is preferred that the big 2nm-6nm of thickness of 121 thickness ratio grating layer of grating coating 11；The grating coating 121
Average growth rate is 0.002 nm/s-0.003 nm/s, and the average growth rate of the transition zone 122 is 0.15 nm/s-
0.55 nm/s；The growth temperature of the grating coating 121 is 530-570 °C, and the growth temperature of the transition zone 122 is
650-690°C.The thickness of the transition zone 122 is 10 times -20 times of the thickness of grating coating 121.
The thickness of the grating layer 11 of the present embodiment is 40 nm；Screen periods are 210nm in grating layer 11；Grating layer 11
Wavelength is 1100 nm；The thickness of the grating coating 121 is 42.3 nm.
It is preferred that the cushion 2 is layer of InP；The lower limit layer 3 is AlInAs layers；The lower waveguide layer 4 is
AlGaInAs layers；The active layer 5 is AlGaInAs layers；The upper ducting layer 6 is AlGaInAs layers；The upper limiting layer 7 is
AlInAs layers；The second buffer layer 8 is layer of InP；The corrosion barrier layer 9 is wavelength 1100nm InGaAsP layer；It is described
Covering 10 is layer of InP；The grating layer 11 is wavelength 1100nm InGaAsP layer；The grating coating 121 is layer of InP；
The transition zone 122 is layer of InP；The first potential barrier graded bedding 13 be wavelength 1300nm InGaAsP layer, second gesture
Build the InGaAsP layer that graded bedding 14 is wavelength 1500nm；The ohmic contact layer 15 is InGaAs layers.
The preparation method of above-mentioned Distributed Feedback Laser epitaxial structure, comprises the following steps：
Step 1: from InP as growth substrates, the preferably electrical conductivity of InP growth substrates is 2-8x1018cm-2, InP
Substrate 1 is put into MOCVD system responses room, and it is 50mbar to control chamber pressure, and growth temperature is 670 DEG C, with H2To carry
Gas, trimethyl indium（TMIn）, trimethyl gallium（TMGa）, trimethyl aluminium（TMAl）, diethyl zinc（DeZn）, silane（SiH4）, arsenic
Alkane（AsH3）And phosphine（PH3）Deng for reaction source gas, grown InP cushion 2, AlInAs lower limits successively on InP substrate 1
The upper ducting layer 6 of preparative layer 3, AlGaInAs lower waveguide layers 4, AlGaInAs active layers 5, AlGaInAs, AlInAs upper limiting layers 7, InP
InGaAsP corrosion barrier layers 9, InP coverings 10 and the wavelength that second buffer layer 8, wavelength are 1100nm are 1100 nm
InGaAsP preparing grating layers 11a；InGaAsP preparing grating layers 11a growth thickness control is 40 nm, grows the structure of completion
Schematic diagram is as shown in Figure 2.
Step 2: taking out the semi-finished product epitaxial wafer that step 1 growth is completed, holographic lithography is used on semi-finished product epitaxial wafer
Or the mode of beamwriter lithography forms grating layer 11 on InGaAsP preparing grating layers 11a；The thickness for controlling grating layer 11 is 40
nm；Screen periods are 210nm in grating layer 11；The structural representation to complete is as shown in Figure 3.
Step 3: step 2 made grating layer 11 semi-finished product epitaxial wafer cleaning after place into MOCVD system responses
Room, it is 50mbar to control chamber pressure, with H2For carrier gas, the PH that flow is 900 sccm is passed through to reative cell3Gas is to protect
Semi-finished product epitaxial wafer is protected, allows reative cell to be to slowly warm up to 550 DEG C, then in t1Flow is passed through as 10 toward reative cell in=2 seconds
The forming core layer of sccm TMIn reaction source gas grown InP grating coating on grating layer 11, it is passed through toward reative cell
Also dopant gas of the flow as 0.36sccm DeZn is passed through while TMIn reaction source gas using double dilution pipelines；Then exist
t2The TMIn reaction source gas into reative cell is closed in=2 seconds, DeZn dopant gas also simultaneously closes off, to grown InP
Atomic migration in the forming core layer of grating coating provides the time, makes the atom in the forming core layer of grown InP grating coating
Move to its minimum energy point, the forming core layer of stable grown InP grating coating；Followed by t3Toward reative cell in=15 seconds
It is passed through TMIn reaction source gas of the flow for 10 sccm continued growth InP on the forming core layer of the InP grating coatings grown
The base layer of grating coating 121, also stream is passed through with double dilution pipelines while TMIn reaction source gas is passed through toward reative cell
Measure the dopant gas of the DeZn for 0.36sccm；Followed by t4The TMIn reaction source gas into reative cell is closed in=2 seconds
With DeZn dopant gas, the time is provided to the atomic migration in the base layer of grown InP grating coating 121 below, is carried
The base layer crystal mass of high InP gratings coating, the base layer of stable InP gratings coating 121；So with t1+t2+t3+t3
=t5=21 seconds gross thickness as growth cycle cycling deposition InP gratings coating 121 to an InP gratings coating 121 are big
Stop the growth of InP gratings coating 121 after the thickness 2nm-6nm of grating layer 11；In the present embodiment, 900 are grown altogether
Circulation, i.e. t5=5.25 hours, each cycling deposition thickness was 0.047 nm, the average growth rate of InP gratings coating 121
For 0.00228 nm/s, the gross thickness of InP gratings coating 121 is 42.3 nm, and the gross thickness of InP gratings coating 121 compares light
Big 2.3 nm of thickness of gate layer 11, the structural representation of completion is grown as shown in figure 4, forming pulsed growth time and reative cell
The corresponding chart of temperature such as Fig. 6.
Step 4: it is 50mbar to keep chamber pressure, PH is kept3The flow that gas is passed through reative cell is 900 sccm,
The temperature of reative cell is increased to 670 DEG C, with H2For carrier gas, then the TMIn reaction sources that flow is 720sccm are passed through toward reative cell
Gas, TMIn reaction source gas can be passed through reative cell by two pipelines, and TMIn reaction source gas is being passed through toward reative cell
DeZn dopant gas of the flow as 37.5sccm also is passed through using double dilution pipelines simultaneously, is covered in the InP gratings for having grown completion
Grown InP transition zone 122 on cap rock 121, now, the average growth rates of InP transition zones is 0.2 nm/s, InP transition zones 122
Stopped growing after growing to setting thickness；The InP transition zones 122 of the present embodiment grew its growth thickness for 600 by 50 minutes
Nm, the structural representation for growing completion are as shown in Figure 5.
Step 5: reaction chamber temperature is allowed to be maintained at 670 DEG C, with H2For carrier gas, respective reaction source gas is passed through, is being grown
Into InP transition zones 122 on a length of 1300nm of growing wave InGaAsP potential barriers graded bedding 13, wavelength are 1500nm successively
InGaAsP potential barriers graded bedding 14 and InGaAs ohmic contact layers 15；Wavelength is 1300nm InGaAsP potential barriers graded bedding 13 and ripple
The a length of 1500nm thickness of InGaAsP potential barriers graded bedding 14 can control identical；Grow the structural representation such as Fig. 1 institutes completed
Show.
After the completion of the epitaxial structures growth of whole Distributed Feedback Laser, using photoetching and etching technics, connect in InGaAs ohms
The upper surface of contact layer 15 forms ridge waveguide structure, and front electrode is then deposited on ridge waveguide structure, and InP substrate 1 is thinned,
Thinned InP substrate backs evaporation backplate；High reflection film is deposited in tube core one end（90 % reflectivity）, other end steaming
Plate low-reflection film（10% reflectivity）, that is, complete the making of Distributed Feedback Laser chip.
The grating coating of the present embodiment is always maintained at PH using low temperature, pulsed slow growth method3The height of gas
Intrinsic standoff ratio, advantageously reduce the volatilization of P in temperature-rise period.Meanwhile TMIn, DeZn are first passed through with short pulse, the shape on epitaxial wafer
Stable state is formed into one layer of very forming core layer of glimmer gate overlap and being allowed to, stacking fault and room are reduced, then in forming core
TMIn, DeZn are passed through with longer pulse on the basis of layer, to form the base layer of grating coating and be allowed to form stable state, so
The growth of grating coating is completed in circulation, and grating just can be preferably protected by stable grating coating and the transition zone grown below
Layer, then grows certain thickness secondary epitaxy layer, can significantly reduce semiconductor epitaxial layers defect concentration on this basis, so as to
DFB crystal mass is improved, improves production yield, reduces DFB application cost.
It the above is only a preferred embodiment of the invention, those skilled in the art is made equivalent change by claim
Both fall within the protection domain of this case.
Claims (9)
1. a kind of epitaxial structure of Distributed Feedback Laser, including InP substrate, are disposed with buffering from bottom to top in InP substrate
Layer, lower limit layer, lower waveguide layer, active layer, upper ducting layer, upper limiting layer, second buffer layer, corrosion barrier layer, covering and light
Gate layer；Secondary epitaxy layer is provided with grating layer, it is characterised in that：The secondary epitaxy layer includes grating bag from bottom to top
Layer, potential barrier graded bedding and ohmic contact layer, the grating covering include grating coating and transition zone, the grating from bottom to top
Overburden cover is more than grating layer thickness；The average growth rate of the grating coating is 0.002 nm/s-0.003 nm/s,
The growth temperature of the grating coating is 530-570 °C；The average growth rate of the transition zone is 0.15 nm/s-0.55
Nm/s, the growth temperature of the transition zone is 650-690 °C.
A kind of 2. epitaxial structure of Distributed Feedback Laser according to claim 1, it is characterised in that：The grating covers thickness
Degree is bigger 2nm-6nm than grating layer thickness.
A kind of 3. epitaxial structure of Distributed Feedback Laser according to claim 1, it is characterised in that：The thickness of the grating layer
For 40 nm；Screen periods are 210 nm in grating layer；The thickness of the grating coating is 42.3 nm.
A kind of 4. epitaxial structure of Distributed Feedback Laser according to any one of claims 1 to 3, it is characterised in that：The buffering
Layer is layer of InP；The lower limit layer is AlInAs layers；The lower waveguide layer is AlGaInAs layers；The active layer is
AlGaInAs layers；The upper ducting layer is AlGaInAs layers；The upper limiting layer is AlInAs layers；The second buffer layer is
Layer of InP, the corrosion barrier layer are wavelength 1100nm InGaAsP layer；The covering is layer of InP, and the grating layer is wavelength
1100nm InGaAsP layer；The grating coating is layer of InP, and the transition zone is layer of InP；The potential barrier graded bedding is
InGaAsP layer；The ohmic contact layer is InGaAs layers.
A kind of 5. epitaxial structure of Distributed Feedback Laser according to claim 1, it is characterised in that：The potential barrier graded bedding is certainly
Upper down to include the first potential barrier graded bedding and the second potential barrier graded bedding, the first potential barrier graded bedding is 1300nm's by wavelength
InGaAsP layer is formed, and the second potential barrier graded bedding is made up of the InGaAsP layer that wavelength is 1500nm.
A kind of 6. preparation method of Distributed Feedback Laser epitaxial structure, it is characterised in that：Comprise the following steps：
Step 1: InP substrate is put into from InP as substrate in MOCVD system responses room, with H2For carrier gas, phase is passed through
Answer reaction source gas, on InP substrate successively grown InP cushion, AlInAs lower limit layers, AlGaInAs lower waveguide layers,
The upper ducting layer of AlGaInAs active layers, AlGaInAs, AlInAs upper limiting layers, InP second buffer layers, InGaAsP corrosion stop
Layer, InP coverings and InGaAsP preparing grating layers；
Step 2: taking out the semi-finished product epitaxial wafer that step 1 growth is completed, holographic lithography or electricity are used on semi-finished product epitaxial wafer
The mode of beamlet photoetching forms grating layer on InGaAsP preparing grating layers；
Step 3: step 2 made grating layer semi-finished product epitaxial wafer cleaning after place into MOCVD system responses room, give
Reative cell is passed through the PH that flow is 850sccm -950 sccm3Gas allows reative cell to be warming up to protect semi-finished product epitaxial wafer
530 DEG C -570 DEG C, then in t1In -8 seconds=1 second the TMIn reaction source gas that flow is 8 sccm -15 sccm is passed through toward reative cell
The forming core layer of body grown InP grating coating on grating layer, then in t2Closed in -5 seconds=2 seconds into reative cell
TMIn reaction source gas, the time is provided to the atomic migration in the forming core layer of grown InP grating coating, it is stable to have grown
The forming core layer of InP grating coatings, followed by t3It is 8 sccm -15 sccm to be passed through flow toward reative cell in -24 seconds=12 seconds
TMIn reaction source gas continued growth InP grating coatings on the forming core layer of the InP grating coatings grown matrix
Layer, followed by t4The TMIn reaction source gas into reative cell is closed in -5 seconds=2 seconds, stable grown InP grating below covers
The base layer of layer, so with t1+t2+t3+t3= t5As a growth cycle cycling deposition InP gratings coating to InP gratings
The gross thickness of coating is more than the growth of stopping InP grating coatings after grating layer thickness 2nm-6nm；
Step 4: allowing the temperature of reative cell to be increased to 650 DEG C -690 DEG C, PH is kept3The flow that gas is passed through reative cell is
850sccm -950 sccm, the TMIn reaction source gas that flow is 600sccm -800sccm then is passed through toward reative cell,
Grown InP transition zone on the InP grating coatings of completion is grown, InP transition zones stop growing after growing to setting thickness；
Step 5: it is 650-690 DEG C to keep reaction chamber temperature, with H2For carrier gas, respective reaction source gas is passed through, is completed in growth
InP transition zones on grow InGaAsP potential barriers graded bedding and InGaAs ohmic contact layers successively.
A kind of 7. preparation method of Distributed Feedback Laser epitaxial structure according to claim 6, it is characterised in that：The step
In three, reative cell PH is passed through3The flow of gas is 900 sccm, and reative cell is warming up to 550 DEG C, is passed through reative cell TMIn reaction sources
The flow of gas is 10 sccm, and also flow is passed through with double dilution pipelines while TMIn reaction source gas is passed through toward reative cell
For 0.36sccm DeZn dopant gas, t1For 2 seconds, t2For 2 seconds, t3For 15 seconds, t4For 2 seconds, InP grating coatings were put down
The equal speed of growth is 0.00228 nm/s；
In the step 4, the temperature of reative cell is allowed to be increased to 670 DEG C, the flow for being passed through reative cell TMIn reaction source gas is
720 sccm, flow also is passed through as 37.5sccm's using double dilution pipelines while TMIn reaction source gas is passed through toward reative cell
DeZn dopant gas, the average growth rate of the InP transition zones is 0.2 nm/s；
In the step 5, the temperature of reative cell remains 670 DEG C.
A kind of 8. preparation method of Distributed Feedback Laser epitaxial structure according to claim 6, it is characterised in that：The step
In three, flow also is passed through as 0.25-0.50sccm using double dilution pipelines while TMIn reaction source gas is passed through toward reative cell
DeZn dopant gas；
In the step 4, toward reative cell be passed through TMIn reaction source gas while also using it is double dilution pipelines be passed through flow as
30-50sccm DeZn dopant gas.
A kind of 9. preparation method of Distributed Feedback Laser epitaxial structure according to claim 6, it is characterised in that：The step
In five, the InGaAsP potential barrier graded beddings for being grown to a length of 1300nm of Mr.'s long wave of InGaAsP potential barrier graded beddings, rear growing wave
A length of 1500nm InGaAsP potential barrier graded beddings.
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| CN110247301B (en) * | 2019-07-17 | 2024-02-20 | 全磊光电股份有限公司 | DFB laser with wide temperature range and preparation method thereof |
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| CN110474232B (en) * | 2019-09-17 | 2023-09-22 | 全磊光电股份有限公司 | High-performance DFB laser epitaxial structure and manufacturing method thereof |
| CN111180313A (en) * | 2020-01-03 | 2020-05-19 | 中国科学院半导体研究所 | Low-dislocation in-situ etching MOCVD secondary epitaxial growth method |
| CN111342343A (en) * | 2020-01-13 | 2020-06-26 | 武汉光安伦光电技术有限公司 | Preparation method of ridge waveguide structure of BH structure laser chip |
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