CN106410023A - Method for preparing graphene composite thermoelectric material - Google Patents
Method for preparing graphene composite thermoelectric material Download PDFInfo
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- CN106410023A CN106410023A CN201611172750.2A CN201611172750A CN106410023A CN 106410023 A CN106410023 A CN 106410023A CN 201611172750 A CN201611172750 A CN 201611172750A CN 106410023 A CN106410023 A CN 106410023A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
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Abstract
The invention discloses a method for preparing a graphene composite thermoelectric material. For the graphene composite SnSe-based thermoelectric material obtained by the preparation method, thermoelectric performance of SnSe-based block material is substantially improved, the method directly utilizes SPS sintering to perform in-situ reaction, and the prepared material has high density, uniform components and excellent performance.
Description
Technical field
The present invention relates to thermoelectricity composite functional material field is and in particular to a kind of preparation side of Graphene composite thermoelectric material
Method.
Background technology
Thermoelectric material (Thermoelectric Materials) is also referred to as thermoelectric material.Thermoelectric material is mainly used in
Prepare thermoelectric cooling device and Thermoelectric Generator.Temperature gradient field heat to electricity conversion principle abbreviation thermoelectric principle
(Thermoe1ectric), its discovery can trace back to for 19th century, 1822, and ThomasSeebeck finds thermoelectromotive force effect
Answer (thermoelectric material electricity generating principle, i.e. Seebeck principle);1834, Jean Peltier found two difference in current loop
Effects of reduced temperature (thermoelectric material refrigeration principle, i.e. Peltier principle) at material conductor junction interface.The 1950's finds
Some semi-conducting materials are good thermoelectric materials.The operating efficiency of thermoelectric device depends on a dimensionless ginseng of material
Number:ZT.TE requirement on devices ZT is the bigger the better, and ZT is bigger, and efficiency is higher.Generally the material of ZT > 0.5 is called thermoelectric material.
It is published within 2014《nature》Correlative study on magazine is pointed out, SnSe has ultralow thermal conductivity, monocrystalline
SnSe has record-breaking high electric heating value.This makes SnSe as a new thermoelectric material system, starts to cause research people
The extensive attention of member, its excellent performance shows that SnSe is the very promising thermoelectric material of one kind.Thus, the synthesis to SnSe and
Its performance study has very important significance.
Content of the invention
The present invention provides a kind of preparation method of Graphene composite thermoelectric material, and the Graphene that this preparation method obtains is combined
SnSe base thermoelectricity material, is greatly improved the thermoelectricity capability of SnSe base block materials, and the method is directly carried out former using SPS sintering
Position reaction, the material density of preparation is high, composition is uniform, excellent performance.
To achieve these goals, the invention provides a kind of preparation method of Graphene composite thermoelectric material, the method
Comprise the steps:
(1)Prepare doping vario-property thermoelectric composite material powder
According to chemical formula SnSeAl in argon atmospher glove boxxEach element content proportioning, wherein 0.02≤x≤0.03, by powder
End mixes, and is sealed in ball grinder under protective atmosphere, is placed on high energy ball mill and carries out ball milling, and Ball-milling Time is 15-
18h, ratio of grinding media to material is 10:1, drum's speed of rotation is 500-800r/min, obtains SnSeAlxMatrix powder;
By the SnSeAl of preparation in argon atmospher glove boxxPowder according to Graphene mass ratio y is respectively:50:1≤y≤
100:1 proportioning mixes, and carries out ball milling, Ball-milling Time 2-4h on high speed ball mill, and ratio of grinding media to material is 10:1, ball mill turns
Speed is 500-800r/min, the doping vario-property thermoelectric composite material powder being uniformly mixed;
(2)Doping vario-property thermoelectric composite material powder is loaded in graphite grinding tool and is compacted, exist together with grinding tool<The vacuum of 10Pa
Under the conditions of be sintered, programming rate be 25 DEG C/min-50 DEG C/min, sintering temperature be 600-900 DEG C, pressure be 75-
95MPa, sintering time be 10-20h minute, raw material sintering during carry out reaction in-situ generate target substance, simultaneously plus
Pressure can make it densified again, finally gives the block Graphene composite thermoelectric material of densification.
Specific embodiment
Embodiment one
According to chemical formula SnSeAl in argon atmospher glove boxxEach element content proportioning, wherein x=0.02, by powder mixing all
Even, it is sealed under protective atmosphere in ball grinder, is placed on high energy ball mill and carries out ball milling, Ball-milling Time is 15h, ratio of grinding media to material is
10:1, drum's speed of rotation is 500r/min, obtains SnSeAlxMatrix powder.
By the SnSeAl of preparation in argon atmospher glove boxxPowder respectively according to Graphene mass ratio y be 50:1 join
Ratio mixes, and carries out ball milling, Ball-milling Time 2h on high speed ball mill, and ratio of grinding media to material is 10:1, drum's speed of rotation is 500r/
Min, the doping vario-property thermoelectric composite material powder being uniformly mixed.
Doping vario-property thermoelectric composite material powder is loaded in graphite grinding tool and is compacted, exist together with grinding tool<10Pa's is true
It is sintered under empty condition, programming rate is 25 DEG C/min, sintering temperature is 600 DEG C, pressure is 75MPa, sintering time is 10
Minute, raw material carries out reaction in-situ during sintering and generates target substance, and pressurization simultaneously can make it densified again, final
To fine and close Graphene composite thermoelectric material.
Embodiment two
According to chemical formula SnSeAl in argon atmospher glove boxxEach element content proportioning, wherein x=0.03, by powder mixing all
Even, it is sealed under protective atmosphere in ball grinder, is placed on high energy ball mill and carries out ball milling, Ball-milling Time is 18h, ratio of grinding media to material is
10:1, drum's speed of rotation is 800r/min, obtains SnSeAlxMatrix powder.
By the SnSeAl of preparation in argon atmospher glove boxxPowder respectively according to Graphene mass ratio y be 100:1 join
Ratio mixes, and carries out ball milling, Ball-milling Time 4h on high speed ball mill, and ratio of grinding media to material is 10:1, drum's speed of rotation is 800r/
Min, the doping vario-property thermoelectric composite material powder being uniformly mixed.
Doping vario-property thermoelectric composite material powder is loaded in graphite grinding tool and is compacted, exist together with grinding tool<10Pa's is true
It is sintered under empty condition, programming rate is 50 DEG C/min, sintering temperature is 900 DEG C, pressure is 95MPa, sintering time is 20
Minute, raw material carries out reaction in-situ during sintering and generates target substance, and pressurization simultaneously can make it densified again, final
To fine and close Graphene composite thermoelectric material.
Claims (1)
1. a kind of preparation method of Graphene composite thermoelectric material, the method comprises the steps:
(1)Prepare doping vario-property thermoelectric composite material powder
According to chemical formula SnSeAl in argon atmospher glove boxxEach element content proportioning, wherein 0.02≤x≤0.03, by powder
Mix, be sealed under protective atmosphere in ball grinder, be placed on high energy ball mill and carry out ball milling, Ball-milling Time is 15-
18h, ratio of grinding media to material is 10:1, drum's speed of rotation is 500-800r/min, obtains SnSeAlxMatrix powder;
By the SnSeAl of preparation in argon atmospher glove boxxPowder according to Graphene mass ratio y is respectively:50:1≤y≤100:
1 proportioning mixes, and carries out ball milling, Ball-milling Time 2-4h on high speed ball mill, and ratio of grinding media to material is 10:1, drum's speed of rotation is
500-800r/min, the doping vario-property thermoelectric composite material powder being uniformly mixed;
(2)Doping vario-property thermoelectric composite material powder is loaded in graphite grinding tool and is compacted, exist together with grinding tool<The vacuum of 10Pa
Under the conditions of be sintered, programming rate be 25 DEG C/min-50 DEG C/min, sintering temperature be 600-900 DEG C, pressure be 75-
95MPa, sintering time be 10-20h minute, raw material sintering during carry out reaction in-situ generate target substance, simultaneously plus
Pressure can make it densified again, finally gives the block Graphene composite thermoelectric material of densification.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910817A (en) * | 2017-04-09 | 2017-06-30 | 苏州思创源博电子科技有限公司 | A kind of quick method for preparing copper selenide composite thermoelectric material |
CN107017331A (en) * | 2017-04-09 | 2017-08-04 | 苏州思创源博电子科技有限公司 | A kind of quick method for preparing cobalt antimony composite thermoelectric material |
CN110707206A (en) * | 2019-11-01 | 2020-01-17 | 重庆大学 | SnSe/rGO thermoelectric composite material and preparation method thereof |
CN112899550A (en) * | 2021-01-18 | 2021-06-04 | 四川大学 | Zirconium-nickel-tin-based half-heusler-graphene composite thermoelectric material and preparation method thereof |
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CN101905972A (en) * | 2009-06-04 | 2010-12-08 | 清华大学 | Aluminum-doped zinc oxide-based thermoelectric material and preparation method thereof |
CN103180982A (en) * | 2010-10-19 | 2013-06-26 | 加利福尼亚理工学院 | Self-tuning of carrier concentration for high thermoelectric performance |
CN103706792A (en) * | 2013-12-30 | 2014-04-09 | 北京科技大学 | Al-doped ZnO texture thermoelectric material manufacturing method |
CN104046876A (en) * | 2014-06-16 | 2014-09-17 | 济南大学 | Graphene/Cu2AX3 type thermoelectric composite material and preparation method thereof |
CN105122485A (en) * | 2013-02-14 | 2015-12-02 | 曼彻斯特大学 | Thermoelectric materials and devices comprising graphene |
CN105895795A (en) * | 2016-04-23 | 2016-08-24 | 北京工业大学 | Method for preparing composite tin selenide based thermoelectric material |
CN105977372A (en) * | 2016-05-13 | 2016-09-28 | 南方科技大学 | K hole doped polycrystalline SnSe and preparation method therefor |
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2016
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101905972A (en) * | 2009-06-04 | 2010-12-08 | 清华大学 | Aluminum-doped zinc oxide-based thermoelectric material and preparation method thereof |
CN103180982A (en) * | 2010-10-19 | 2013-06-26 | 加利福尼亚理工学院 | Self-tuning of carrier concentration for high thermoelectric performance |
CN105122485A (en) * | 2013-02-14 | 2015-12-02 | 曼彻斯特大学 | Thermoelectric materials and devices comprising graphene |
CN103706792A (en) * | 2013-12-30 | 2014-04-09 | 北京科技大学 | Al-doped ZnO texture thermoelectric material manufacturing method |
CN104046876A (en) * | 2014-06-16 | 2014-09-17 | 济南大学 | Graphene/Cu2AX3 type thermoelectric composite material and preparation method thereof |
CN105895795A (en) * | 2016-04-23 | 2016-08-24 | 北京工业大学 | Method for preparing composite tin selenide based thermoelectric material |
CN105977372A (en) * | 2016-05-13 | 2016-09-28 | 南方科技大学 | K hole doped polycrystalline SnSe and preparation method therefor |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106910817A (en) * | 2017-04-09 | 2017-06-30 | 苏州思创源博电子科技有限公司 | A kind of quick method for preparing copper selenide composite thermoelectric material |
CN107017331A (en) * | 2017-04-09 | 2017-08-04 | 苏州思创源博电子科技有限公司 | A kind of quick method for preparing cobalt antimony composite thermoelectric material |
CN110707206A (en) * | 2019-11-01 | 2020-01-17 | 重庆大学 | SnSe/rGO thermoelectric composite material and preparation method thereof |
CN112899550A (en) * | 2021-01-18 | 2021-06-04 | 四川大学 | Zirconium-nickel-tin-based half-heusler-graphene composite thermoelectric material and preparation method thereof |
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