CN106409955A - Satellite-borne ray-energy nanobattery - Google Patents
Satellite-borne ray-energy nanobattery Download PDFInfo
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- CN106409955A CN106409955A CN201610958055.2A CN201610958055A CN106409955A CN 106409955 A CN106409955 A CN 106409955A CN 201610958055 A CN201610958055 A CN 201610958055A CN 106409955 A CN106409955 A CN 106409955A
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- energy
- ray
- photon
- cesium iodide
- spaceborne
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims abstract description 23
- 239000002070 nanowire Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000003574 free electron Substances 0.000 claims abstract description 6
- 239000000969 carrier Substances 0.000 claims abstract description 4
- 230000003595 spectral effect Effects 0.000 claims description 7
- 208000019155 Radiation injury Diseases 0.000 claims description 6
- 230000003471 anti-radiation Effects 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 238000000862 absorption spectrum Methods 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000005251 gamma ray Effects 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 32
- 230000009466 transformation Effects 0.000 description 5
- 208000027418 Wounds and injury Diseases 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 208000014674 injury Diseases 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000023266 generation of precursor metabolites and energy Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000036755 cellular response Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000011824 nuclear material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
Provided in the invention is a satellite-borne ray-energy nanobattery comprising silicon nanowires, a cesium iodide layer, a bulk silicon emitter, an exhaustion region, a bulk silicon base and a back panel. The silicon nanowires absorb light from an ultraviolet band, a visible band and an infrared band to generate free electrons; and the photon energy is collected by the silicon nanowires, thereby increasing the power density. The cesium iodide layer absorbs a high-energy X ray and a high-energy gamma ray and converts the high-energy ray photon into a photo at the visible band. The bulk silicon emitter and the bulk silicon base collect excessive carriers and absorb perpendicular incidence and secondary reflection photons. A built-in voltage is kept in the exhaustion region to guarantee separation of a photon-generated carrier. The back panel reflects the photons and the photo absorbing probability by the bulk silicon is increased. According to the invention, the surface coating structure of the solar cell is made of a cesium-iodide scintillation crystal material and the response band of eh current solar battery is broadened to the ray region including the x ray and the gamma ray, so that a certain radiation damage protection effect is realized. And thus the power supply demand of the spacecraft in a high-radiation low-illumination space environment can be satisfied.
Description
Technical field
A kind of the present invention relates to energy resource system field in space technology, in particular it relates to spaceborne radial energy nano cell.
Background technology
With the increase of Satellite Payloads, the energy resource supply of satellite become the important restriction of the long-term operation on orbit of satellite because
Element.In-orbit spacecraft mainly has three kinds of power supply modes：Solar cell for supplying power, storage battery power supply and nuclear energy are powered.
Solar energy is converted to electric energy by current more than 90% passing of satelline solar cell.Space solar cell
Response spectral coverage concentrates on visible region, and excitation energy source is single, and space cell radiation injury cover plate quality accounting mistake
Height, cover plate quality accounting about 50%, affect power-supply system efficiency-cost ratio.For tasks such as surveies of deep space, because spacecraft is away from too
Sun, therefore cannot be in deep space normally using solar cell.For storage battery power supply mode, when battery power runs out of, battery
Quit work, current battery constitutes spacecraft electric power system mainly as energy storage device with space solar cell, in " star
Erosion " the stage continues to provide electric energy for spacecraft.Nuclear energy is the self-powered unique method of current survey of deep space spacecraft, but exists and need
Nuclear material is carried out with radiation protection, the problems such as nuclear battery power output is gradually lowered in time, its application is restricted.
In view of the pluses and minuses of current three kinds of power supply modes of spacecraft, for the longevity of survey of deep space spacecraft operation on orbit
Life requires, the development result in conjunction with current nanometer energy technology it is proposed that a kind of spaceborne radial energy nano cell, to meet space flight
Power demands under high radiation, the space environment of low illumination for the device.
Content of the invention
For defect of the prior art, it is an object of the invention to provide a kind of spaceborne radial energy nano cell.
The spaceborne radial energy nano cell being provided according to the present invention, including：The silicon nanowires that is sequentially overlapped, cesium iodide layer,
Depletion region, body silicon emitter and base stage, backboard；
Described silicon nanowires, the light for absorbing ultraviolet band, visible light wave range and infrared band produces free electron；
Described cesium iodide layer, for absorbing high-energy ray, and high-energy ray converting photons is multiple visible light wave range
Photon；
Described body silicon emitter and base stage, for converging excess carriers, are carried out with secondary reflection photon to direct projection photon
Absorb；
Described depletion region, for maintaining built-in voltage；
Described backboard, the photon not absorbed first by described body silicon emitter and base stage for reflection.
Preferably, described cesium iodide layer can adulterate different element materials, and described different element material can control
Centre of luminescence spectral coverage, changes the absorption spectrum center spectral coverage of battery, realizes battery efficiency regulation and control.
Preferably, the high-energy ray that described cesium iodide layer absorbs includes：X-ray and gamma-rays.
Preferably, described cesium iodide can also be used as antiradiation injury structure sheaf.
Compared with prior art, the present invention has following beneficial effect：
1st, the spaceborne radial energy nano cell that the present invention provides is by being used as solar energy using cesium iodide scintillator crystal materials
Battery surface coating structure, the response band of current spatial solar cell is widened to ray from visible ray, infrared light (X penetrates
Line and gamma-rays), realize radial energy (X-ray and gamma-rays) and arrive electric transformation of energy, improve the transformation efficiency of cell panel.
2nd, the spaceborne radial energy nano cell that the present invention provides enables survey of deep space spacecraft to absorb high energy at any time to penetrate
Line accumulates electric energy, reduces the dependence to solar energy for the current spacecraft energy resource system.
3rd, the spaceborne radial energy nano cell that the present invention provides adopts cesium iodide scintillator crystal materials as solar cell
Face coat structure, plays certain radiation injury protective action, realizes the knot of the energy and antiradiation injury to a certain extent
Structure is multiplexed.
Brief description
The detailed description with reference to the following drawings, non-limiting example made by reading, the further feature of the present invention,
Objects and advantages will become more apparent upon：
The spaceborne radial energy nano cell structural stratification figure that Fig. 1 provides for the present invention；
The spaceborne radial energy nano cell energy pathway schematic diagram that Fig. 2 provides for the present invention；
In figure：
1- silicon nanowires；
2- cesium iodide；
3- backboard；
4- emitter stage；
5- depletion region；
6- base stage.
Specific embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, some changes and improvements can also be made.These broadly fall into the present invention
Protection domain.
The present invention proposes a kind of spaceborne radial energy nano cell, and described spaceborne radial energy nano cell includes successively：Silicon is received
Rice noodles, cesium iodide layer, depletion region, body silicon emitter and base stage, backboard；
Described silicon nanowires, the light for absorbing ultraviolet band, visible waveband and infrared band produces free electron, passes through
Photon energy converges, and increases power density；
Described cesium iodide layer, for absorbing sigmatron and gamma-rays, high-energy ray converting photons is multiple visible rays
The photon of wave band, and play certain radiation injury protective action；
Described body silicon emitter and base stage, for converging excess carriers, are carried out with secondary reflection photon to direct projection photon
Absorb；
Described depletion region, for maintaining built-in voltage it is ensured that photo-generated carrier separates；
Described backboard, for reflecting photon, increases body silicon and absorbs photon probability.
Described cesium iodide (CsI) layer has high X-ray acceptance rate and high visible suboutput, can be by CsI
The different element material of doping, controls centre of luminescence spectral coverage, thus regulating and controlling the absorption spectrum center spectral coverage of battery, regulation and control battery effect
Rate.
Described spaceborne radial energy nano cell, the response band of current solar cell is widened to ray area (X-ray
And gamma-rays), realize radial energy (X-ray and gamma-rays) and arrive electric transformation of energy.
Described spaceborne radial energy nano cell, due to can accumulate electric energy by absorbing X-ray and gamma-rays, plays certain
Radiation injury protective action, realize the structure multiplexing of the energy and antiradiation injury to a certain extent.
Compared with traditional solar cell, the spaceborne radial energy nano cell that the present invention provides, due to employing iodate
Caesium scintillator crystal materials, as solar cell surface coating structure, the response band of current solar cell are widened to ray
Area's (X-ray and gamma-rays) is it is adaptable to the spacecraft under high radiation, low illumination space environment is powered.
Specifically, as shown in figure 1, spaceborne radial energy nano cell, including silicon nanowires, cesium iodide layer, body silicon emitter,
Depletion region, body silicon substrate pole and backboard.The light that described silicon nanowires absorbs ultraviolet band, visible waveband and infrared band produces freely
Electronics, converges photon energy by silicon nanowires, increases power density；Described cesium iodide layer absorbs sigmatron and gamma-rays,
The photon that high-energy ray converting photons are multiple visible light wave ranges；Superfluous current-carrying is converged in described body silicon emitter and body silicon substrate pole
Son, absorbs direct projection photon and secondary reflection photon；Described depletion region maintains built-in voltage it is ensured that photo-generated carrier separates；Described
Backboard reflects photon, increases body silicon and absorbs photon probability.The present invention widens the response band of current solar cell to ray
Area's (X-ray and gamma-rays) it is adaptable to survey of deep space spacecraft Long-term absorption ray under high radiation, low illumination space environment,
Accumulation electric energy, plays certain radiation injury protective action, realizes the energy to a certain extent multiple with the structure of antiradiation injury
With.
Further, as shown in Fig. 2 the spaceborne radial energy nano cell energy pathway that the present invention provides includes：
(1) for the light of ultraviolet, visible and infrared band：Silicon nanowires absorbs ultraviolet, visible and infrared band light produces
Raw free electron, operation principle is identical with conventional solar cells, thus realizing luminous energy to electric transformation of energy.
(2) for sigmatron and gamma-rays：Cesium iodide layer absorbs sigmatron and gamma-rays, by high-energy ray photon
It is converted into the photon of multiple visible light wave ranges, such photon is absorbed by the nano wire of solar cell and body silicon, and is converted into
Free electron, thus realize radial energy (X-ray and gamma-rays) to arrive electric transformation of energy.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make a variety of changes within the scope of the claims or change, this not shadow
Ring the flesh and blood of the present invention.In the case of not conflicting, feature in embodiments herein and embodiment can any phase
Mutually combine.
Claims (4)
1. a kind of spaceborne radial energy nano cell is it is characterised in that include：The silicon nanowires that is sequentially overlapped, cesium iodide layer, exhaust
Area, body silicon emitter and base stage, backboard；
Described silicon nanowires, the light for absorbing ultraviolet band, visible light wave range and infrared band produces free electron；
Described cesium iodide layer, for absorbing high-energy ray, and the photon that high-energy ray converting photons are multiple visible light wave ranges；
Described body silicon emitter and base stage, for converging excess carriers, are absorbed with secondary reflection photon to direct projection photon；
Described depletion region, for maintaining built-in voltage；
Described backboard, the photon not absorbed first by described body silicon emitter and base stage for reflection.
2. spaceborne radial energy nano cell according to claim 1 is it is characterised in that described cesium iodide layer can adulterate not
Same element material, described different element material can control centre of luminescence spectral coverage, changes the absorption spectrum central spectral of battery
Section, realizes battery efficiency regulation and control.
3. spaceborne radial energy nano cell according to claim 1 it is characterised in that described cesium iodide layer absorb high energy
Ray includes：X-ray and gamma-rays.
4. spaceborne radial energy nano cell according to claim 1 is it is characterised in that described cesium iodide can also be used as anti-
Radiation injury structure sheaf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610958055.2A CN106409955B (en) | 2016-11-03 | 2016-11-03 | Spaceborne radial energy nano cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610958055.2A CN106409955B (en) | 2016-11-03 | 2016-11-03 | Spaceborne radial energy nano cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409955A true CN106409955A (en) | 2017-02-15 |
| CN106409955B CN106409955B (en) | 2018-08-03 |
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Family Applications (1)
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|---|---|---|---|
| CN201610958055.2A Active CN106409955B (en) | 2016-11-03 | 2016-11-03 | Spaceborne radial energy nano cell |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131433A (en) * | 2006-08-21 | 2008-02-27 | 西门子公司 | X-ray converter element |
| US20100135463A1 (en) * | 2008-12-02 | 2010-06-03 | Samsung Electronics Co., Ltd. | X-ray image obtaining/imaging apparatus and method |
| CN102881702A (en) * | 2012-09-26 | 2013-01-16 | 浙江大学 | Array X-ray sensor and manufacturing method thereof |
| CN104409127A (en) * | 2014-11-14 | 2015-03-11 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| CN104659141A (en) * | 2015-03-07 | 2015-05-27 | 顾海涛 | High-efficiency solar battery covering frequency doubling crystals |
| CN104716209A (en) * | 2015-03-20 | 2015-06-17 | 黄河水电光伏产业技术有限公司 | Solar cell based on silicon substrate nanowire and preparing method thereof |
| US20150276947A1 (en) * | 2014-03-26 | 2015-10-01 | California Institute Of Technology | Subnanosecond scintillation detector |
-
2016
- 2016-11-03 CN CN201610958055.2A patent/CN106409955B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131433A (en) * | 2006-08-21 | 2008-02-27 | 西门子公司 | X-ray converter element |
| US20100135463A1 (en) * | 2008-12-02 | 2010-06-03 | Samsung Electronics Co., Ltd. | X-ray image obtaining/imaging apparatus and method |
| CN102881702A (en) * | 2012-09-26 | 2013-01-16 | 浙江大学 | Array X-ray sensor and manufacturing method thereof |
| US20150276947A1 (en) * | 2014-03-26 | 2015-10-01 | California Institute Of Technology | Subnanosecond scintillation detector |
| CN104409127A (en) * | 2014-11-14 | 2015-03-11 | 中国工程物理研究院核物理与化学研究所 | Composite converting type isotope battery |
| CN104659141A (en) * | 2015-03-07 | 2015-05-27 | 顾海涛 | High-efficiency solar battery covering frequency doubling crystals |
| CN104716209A (en) * | 2015-03-20 | 2015-06-17 | 黄河水电光伏产业技术有限公司 | Solar cell based on silicon substrate nanowire and preparing method thereof |
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