CN106409942B - A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current - Google Patents
A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current Download PDFInfo
- Publication number
- CN106409942B CN106409942B CN201610924437.3A CN201610924437A CN106409942B CN 106409942 B CN106409942 B CN 106409942B CN 201610924437 A CN201610924437 A CN 201610924437A CN 106409942 B CN106409942 B CN 106409942B
- Authority
- CN
- China
- Prior art keywords
- cis
- layer
- back segment
- dark current
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 title claims abstract description 13
- 238000005457 optimization Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000014759 maintenance of location Effects 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052681 coesite Inorganic materials 0.000 claims description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 229910052682 stishovite Inorganic materials 0.000 claims description 14
- 229910052905 tridymite Inorganic materials 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 11
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 10
- 230000004907 flux Effects 0.000 description 4
- 238000000280 densification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- YFNCATAIYKQPOO-UHFFFAOYSA-N thiophanate Chemical compound CCOC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OCC YFNCATAIYKQPOO-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention provides a kind of back segment optical channel technique that optimizes the method that reduces CIS dark current.In the method according to the optimization back segment optical channel technique of the present invention to reduce CIS dark current, CIS photodiode areas, its posterior segment dielectric SiO are formed2SICN materials are all removed in layer, and in the top selective retention SI3N4 materials of CIS photodiode areas.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of CIS devices and optimization back segment light
Via process is come the method that reduces CIS dark current.
Background technology
Non- SiO above CIS (CMOS Image Sensor, cmos image sensor) product photodiode2Layer (bag
Include NDC and SiN) it would generally be removed to reduce the consume that incident light is produced because of the refraction between different materials, but in addition
On the one hand, SiCN (NDC, Nitrogen Doped silicon Carbide) or SiN protection are lost, H ions easily overflow
So that SiO2/ Si interfacial states can not be repaired, and finally produce dark current.
How compacted zone is retained so that H ions will not be overflowed to improve dark current, while luminous flux can not be influenceed, as one
Individual problem.
The content of the invention
The technical problems to be solved by the invention are that there is provided a kind of CIS devices for there is drawbacks described above in the prior art
And optimization back segment optical channel technique is come the method that reduces CIS dark current, enable to H ions not overflow with improve dark current,
Luminous flux can not be influenceed simultaneously.
In order to realize above-mentioned technical purpose, optimize back segment optical channel technique to reduce CIS there is provided one kind according to the present invention
The method of dark current, including：Form CIS photodiode areas, its posterior segment dielectric SiO2SiCN materials are all removed in layer,
And in the top selective retention top layer Si of CIS photodiode areas3N4Material.
Preferably, in the method for optimizing back segment optical channel technique to reduce CIS dark current, CIS photodiodes
The back segment dielectric SiO in region2SiCN layers of back segment dielectric is all removed in layer.
Preferably, in the method for optimizing back segment optical channel technique to reduce CIS dark current, in the pole of CIS photoelectricity two
The top selective retention top layer Si in area under control domain3N4Material.
Preferably, in the method for optimizing back segment optical channel technique to reduce CIS dark current, CIS photodiodes
Retain layer of sin material in the back segment dielectric layer in region.
In order to realize above-mentioned technical purpose, according to the present invention, a kind of CIS devices are additionally provided, it is characterised in that including：
CIS photodiode areas, wherein in the back segment dielectric SiO of CIS photodiode areas2SiCN materials are all removed in layer,
And in the top selective retention top layer Si of CIS photodiode areas3N4Material.
Preferably, in the CIS devices, the back segment dielectric SiO of CIS photodiode areas2After all being removed in layer
SiCN layers of Duan Jie electricity.
Preferably, in the CIS devices, SiN materials at the top of the top selective retention of CIS photodiode areas.
Preferably, in the CIS devices, layer of sin material is retained in the back segment dielectric layer of CIS photodiode areas
Material.
The present invention utilizes SiO2/ Si interfaces dangling bonds produce CIS dark current theory, pass through and select to optimize back segment dielectric layer
Coverage mode by protecting H+ ions repairs dangling bonds, using fine and close SiN as the covering material of passivation layer, and removes
Non- SiO above all CIS photodiodes beyond this layer2Material, improves product in the case where not influenceing luminous flux
Dark current.
Brief description of the drawings
With reference to accompanying drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features is more easily understood, wherein：
Fig. 1 schematically shows the structural representation of the photodiode area of the CIS devices of prior art.
It is dark to reduce CIS that Fig. 2 schematically shows optimization back segment optical channel technique according to the preferred embodiment of the invention
The CIS devices that the method for electric current is obtained.
It should be noted that accompanying drawing is used to illustrate the present invention, it is not intended to limit the present invention.Note, represent that the accompanying drawing of structure can
It can be not necessarily drawn to scale.Also, in accompanying drawing, same or similar element indicates same or similar label.
Embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
Theoretical research shows SiO2/ Si interfacial states are to cause the main source of CIS dark current, and H+ ions can by with
SiO2Dangling bonds in/Si interfaces, which are combined, to be made it lose activity and reduces dark current.But H+ ions are easily in heat treatment process
Overflow, and the SiO of back segment2Not enough densification is not enough to prevent the spilling of H+ ions.Fig. 1 schematically shows prior art
The structural representation of the photodiode area of CIS devices.Normal CIS product back segment materials are included as SiO2(dielectric SiO2Layer
10th, passivation layer covering SiO2Layer 30), SiCN (back segment dielectric SiCN layers 21,22,23,24) and SiN (passivation layer covering SiN layer
20th, top SiN materials 40), based on increase incident light quantity carry SiCN above highly sensitive requirement, CIS photodiodes or
SiN can be removed, and lose the SiCN or SiN of densification protection, and H+ ions, which overflow, increases dark current so that dark current and spirit
Turn into conflict between sensitivity.The present invention have found a good solution by experimental result, by selecting to retain
SiN to reduce dark current in the case where not influenceing sensitivity.
The present invention is improved for this structure shown in Fig. 1, and the present invention uses SiN the covering as passivation layer of densification
Cover material, and remove non-SiO above all CIS photodiodes beyond this layer2Material, in the case where not influenceing luminous flux
Improve the dark current of product.More specifically, the present invention utilizes SiO2/ Si interfaces dangling bonds produce CIS dark current theory, pass through
The coverage mode of selection optimization back segment dielectric layer improves the method for dark current by protecting H+ ions and repairing dangling bonds.
It will be detailed below the preferred embodiments of the present invention.
It is dark to reduce CIS that Fig. 2 schematically shows optimization back segment optical channel technique according to the preferred embodiment of the invention
The CIS devices that the method for electric current is obtained.
As shown in Fig. 2 reducing CIS dark current in optimization back segment optical channel technique according to the preferred embodiment of the invention
In method, CIS photodiode areas, its posterior segment dielectric SiO are formed2Do not retain and (that is, all remove) SiCN materials in layer 10
Expect (for example, not retaining SiCN layers of back segment dielectric), and in the top selective retention Si of CIS photodiode areas3N4Material
(for example, Si at the top of selective retention3N4Material 40).
Preferably, SiO is covered in the passivation layer of CIS photodiode areas2The density of layer 30 is more than predetermined density, thus
Form fine and close passivation layer covering SiO2Layer 30.
Thus, CIS devices according to the preferred embodiment of the invention include：CIS photodiode areas, wherein in CIS light
The dielectric SiO of photodiode area2SiCN materials (for example, not retaining SiCN layers of back segment dielectric), Er Qie are not retained in layer 10
The top selective retention Si of CIS photodiode areas3N4Material is (for example, Si at the top of selective retention3N4Material 40).
Preferably, SiO is covered in the passivation layer of CIS photodiode areas2The density of layer 30 is more than predetermined density, thus
Form fine and close passivation layer covering SiO2Layer 30.
The present invention removes all SiCN layers and top SiN above photodiode, the only SiN's in reservation passivation layer
Mode prevents the H ions above photodiode from dissociating the dangling bonds of photodiode surface, so that dark current is reduced, and not
Influence sensitivity.
Furthermore, it is necessary to explanation, unless stated otherwise or is pointed out, term " first " otherwise in specification, " the
Two ", the description such as " 3rd " is used only for distinguishing each component, element, step in specification etc., without being intended to indicate that each
Logical relation or ordinal relation between component, element, step etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment and being not used to
Limit the present invention.For any those skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible variations and modification are all made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of change.Therefore, every content without departing from technical solution of the present invention, the technical spirit pair according to the present invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection
It is interior.
And should also be understood that the present invention is not limited thereto place description specific method, compound, material, system
Technology, usage and application are made, they can change.It should also be understood that term described herein is used merely to describe specific
Embodiment, rather than for limiting the scope of the present invention.It must be noted that herein and being used in appended claims
Singulative " one ", " one kind " and "the" include complex reference, unless context explicitly indicates that contrary.Therefore, example
Such as, the citation to " element " means the citation to one or more elements, and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
The citation of multiple steps or device, and potentially include secondary step and second unit.It should be managed with broadest implication
All conjunctions that solution is used.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of the structure
Equivalent.It can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
Claims (2)
1. a kind of method for optimizing back segment optical channel technique to reduce CIS dark current, it is characterised in that including：Form CIS photoelectricity
Diode area, the back segment dielectric SiO of CIS photodiode areas2Retain one layer of fine and close SiN material on layer and be used as passivation
Layer, its posterior segment dielectric SiO2SiCN materials are all removed in layer, the SiCN materials that all remove include all removing back segment
SiCN layers of dielectric, and in the top selective retention top layer Si of CIS photodiode areas3N4Material is used as top Si3N4
Layer.
2. a kind of CIS devices, it is characterised in that including：CIS photodiode areas, the back segment of CIS photodiode areas
Dielectric SiO2There is one layer of fine and close SiN material as passivation layer on layer, wherein the back segment in CIS photodiode areas is situated between
Electric SiO2SiCN materials are all removed in layer, the SiCN materials that all remove include all removing SiCN layers of back segment dielectric, and
And in the top selective retention top layer Si of CIS photodiode areas3N4Material is used as top Si3N4Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924437.3A CN106409942B (en) | 2016-10-24 | 2016-10-24 | A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924437.3A CN106409942B (en) | 2016-10-24 | 2016-10-24 | A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409942A CN106409942A (en) | 2017-02-15 |
| CN106409942B true CN106409942B (en) | 2017-09-29 |
Family
ID=58012673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610924437.3A Active CN106409942B (en) | 2016-10-24 | 2016-10-24 | A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106409942B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431089A (en) * | 2007-11-06 | 2009-05-13 | 东部高科股份有限公司 | Image sensor and method for manufacturing the same |
| CN101715078A (en) * | 2008-10-01 | 2010-05-26 | 东部高科股份有限公司 | Image sensor and method for fabricating the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013179224A (en) * | 2012-02-29 | 2013-09-09 | Sharp Corp | Solid state image pickup element manufacturing method |
-
2016
- 2016-10-24 CN CN201610924437.3A patent/CN106409942B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431089A (en) * | 2007-11-06 | 2009-05-13 | 东部高科股份有限公司 | Image sensor and method for manufacturing the same |
| CN101715078A (en) * | 2008-10-01 | 2010-05-26 | 东部高科股份有限公司 | Image sensor and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106409942A (en) | 2017-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8405182B2 (en) | Back side illuminated image sensor with improved stress immunity | |
| US9583664B2 (en) | Ge/Si avalanche photodiode with integrated heater and fabrication method thereof | |
| US8786043B2 (en) | High performance GeSi avalanche photodiode operating beyond Ge bandgap limits | |
| US7067394B2 (en) | Manufacturing of monolithically integrated pin structures | |
| KR101891150B1 (en) | Low voltage photodetectors | |
| US9425228B2 (en) | Image sensor with reduced optical path | |
| KR20150035520A (en) | Avalanche photodiodes with defect-assisted silicon absorption regions | |
| WO2002091480A3 (en) | Optical device and method therefor | |
| US9864136B1 (en) | Non-planar monolithic hybrid optoelectronic structures and methods | |
| US20120006980A1 (en) | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production | |
| US9219177B2 (en) | Photo detector and integrated circuit | |
| EP3012863B1 (en) | Image sensor and electronic device including the same | |
| KR20150136039A (en) | Image sensor with improved dark current performance | |
| US20180226531A1 (en) | Optoelectronic device having photodiodes for different wavelengths and process for making same | |
| US20150338273A1 (en) | Ultraviolet sensor having filter | |
| US20200135956A1 (en) | Implementation of an optimized avalanche photodiode (apd)/single photon avalanche diode (spad) structure | |
| CN106409942B (en) | A kind of CIS devices and optimization back segment optical channel technique are come the method that reduces CIS dark current | |
| US20140175586A1 (en) | Image sensor and method for fabricating the same | |
| US8005326B2 (en) | Optical clock signal distribution using through-silicon vias | |
| US9252296B2 (en) | Semiconductor device with compressive layers | |
| Arunachalam et al. | Simulation study of high-speed Ge photodetector dark and light current degradation | |
| El-Amir et al. | Optoelectronic characteristics of the Ag-doped Si pn photodiodes prepared by a facile thermal diffusion process | |
| Cong et al. | Integrated color photodetectors in 40-nm standard CMOS technology | |
| CN104078472B (en) | CMOS (Complementary Metal Oxide Semiconductor) image sensor and manufacturing method thereof | |
| Xu et al. | Silicon light-emitting device in standard CMOS technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |