CN106409889B - Semiconductor device with a plurality of semiconductor chips - Google Patents

Semiconductor device with a plurality of semiconductor chips Download PDF

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Publication number
CN106409889B
CN106409889B CN201510467637.6A CN201510467637A CN106409889B CN 106409889 B CN106409889 B CN 106409889B CN 201510467637 A CN201510467637 A CN 201510467637A CN 106409889 B CN106409889 B CN 106409889B
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barrier layer
bottom metal
metal barrier
semiconductor device
nitrogen
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CN106409889A (en
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陆俊岑
赖建铭
周禄盛
蔡雅卉
邱靖翔
萧有彤
黄振铭
李昆儒
王裕平
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United Microelectronics Corp
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United Microelectronics Corp
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Priority to US14/840,041 priority patent/US10008581B2/en
Publication of CN106409889A publication Critical patent/CN106409889A/en
Priority to US15/981,913 priority patent/US10290723B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B1/00—Layered products having a non-planar shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures

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Abstract

The invention discloses a semiconductor element, which comprises a substrate and a gate structure arranged on the substrate, wherein the gate structure comprises a high dielectric constant dielectric layer arranged on the substrate and a bottom metal barrier layer arranged on the high dielectric constant dielectric layer, the bottom metal barrier layer comprises an upper half part, a middle half part and a lower half part, the upper half part is a nitrogen-rich part, and the middle half part and the lower half part are respectively a titanium-rich part.

Description

Semiconductor device with a plurality of semiconductor chips
Technical Field
The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a metal gate.
Background
In the semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate fill material choice. However, as the size of MOS transistors is continuously reduced, the conventional polysilicon gate has problems of reduced device performance due to boron penetration (boron depletion) effect, and unavoidable depletion (depletion effect), which increases the equivalent gate dielectric thickness, reduces the gate capacitance, and further causes the driving capability of the device to deteriorate. Therefore, the semiconductor industry has attempted to replace conventional polysilicon gates with new gate fill materials, such as work function (work function) metals, as control electrodes for matching High-K gate dielectrics.
In general, conventional planar metal gate transistors typically employ ion implantation to simultaneously adjust the threshold voltage of the transistors. However, as Field Effect Transistors (FETs) continue to shrink in size, the development of planar field effect transistors (planar) has faced the limit of the manufacturing process. To overcome the limitation of the manufacturing process, it is becoming a mainstream trend to replace planar transistor devices with non-planar (non-planar) field effect transistor devices, such as Fin field effect transistor (Fin FET) devices. However, in the present finfet manufacturing process, when the electric field applied to the dielectric material exceeds a threshold value, the current suddenly increases to completely fail the dielectric material, which causes a time-dependent dielectric breakdown (TDDB) problem. Therefore, how to improve the defect in the fin transistor structure is an important issue today.
Disclosure of Invention
In order to solve the above problems, a preferred embodiment of the present invention discloses a semiconductor device, which includes a substrate and a gate structure disposed on the substrate, wherein the gate structure includes a high-k dielectric layer disposed on the substrate and a bottom metal barrier layer disposed on the high-k dielectric layer, the bottom metal barrier layer includes an upper half, a middle half and a lower half, and the upper half is a nitrogen-rich portion and the middle half and the lower half are titanium-rich portions, respectively.
In another embodiment of the present invention, a semiconductor device comprises a substrate and a gate structure disposed on the substrate, wherein the gate structure comprises a high-k dielectric layer disposed on the substrate and a bottom metal barrier layer disposed on the high-k dielectric layer, the bottom metal barrier layer comprises an upper half, a middle half and a lower half, the middle half is a nitrogen-rich portion and the upper half and the lower half are each a titanium-rich portion.
Drawings
FIG. 1 is a schematic diagram of a semiconductor device according to a preferred embodiment of the present invention;
FIG. 2 is an enlarged schematic view of the bottom metal barrier layer of the preferred embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor device according to another embodiment of the invention.
Description of the main elements
12 substrate 14 gate structure
16 spacer 18 source/drain region
20 contact hole etch stop layer 22 interlevel dielectric layer
24 dielectric layer 26 high dielectric constant dielectric layer
28 bottom metal barrier layer 30 bottom metal barrier layer
32 work function metal layer 34 low resistance metal layer
36 upper half 38 middle half
40 lower half
Detailed Description
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a semiconductor device according to a preferred embodiment of the invention. As shown in fig. 1, a substrate 12 is provided, and at least one gate structure 14 is formed on the substrate. The substrate 12 is a semiconductor substrate, such as a silicon substrate, a silicon-containing substrate (e.g., SiC), a iii-v substrate (e.g., GaN), a iii-v silicon-on-silicon substrate (e.g., GaN), a graphene-on-silicon substrate (graphene-on-silicon), a silicon-on-insulator (SOI) substrate, or an epitaxial layer-containing substrate (e.g., a P-type substrate with a 2.5 micrometer (um) thick P-type epitaxial layer).
The gate structure 14 can be fabricated by a gate first fabrication process, a gate last dielectric layer high-k first fabrication process, and a gate last dielectric layer high-k last fabrication process according to the fabrication process requirements. Taking the post-gate dielectric layer fabrication process of the present embodiment as an example, a dummy gate (not shown) preferably comprising a dielectric layer and a polysilicon material may be formed on the substrate 12, and then the spacer 16 may be formed on the sidewall of the dummy gate. Then, a source/drain region 18 and/or an epitaxial layer (not shown) is formed in the substrate 12 on both sides of the spacer 16, a metal silicide (not shown) is selectively formed on the surface of the source/drain region 18 and/or the epitaxial layer, a contact hole etching stop layer 20 is formed to cover the dummy gate, and an interlayer dielectric layer 22 is formed on the contact hole etching stop layer 20.
A metal gate replacement (replac) may then be performedelement metal gate) by planarizing a portion of the interlayer dielectric layer 22 and the contact hole etch stop layer 20 and converting the dummy gate into the gate structure 14 of the metal gate. The metal gate replacement process may include a selective dry or wet etching process, such as ammonia (NH)4OH) or Tetramethylammonium Hydroxide (TMAH) to remove the polysilicon material in the dummy gate and form a recess in the interlayer dielectric layer 22 and the spacer 16.
The dielectric layer in the original dummy gate may be removed, and another dielectric layer 24, a high-k dielectric layer 26, a bottom metal barrier layer 28, a bottom metal barrier layer 30, a work function metal layer 32, and a low resistance metal layer 34 may be deposited in the recess. Then, a planarization process is performed, for example, a Chemical Mechanical Polishing (CMP) process is performed to make the upper surfaces of the high-k dielectric layer 26, the bottom metal barrier layer 28, the bottom metal barrier layer 30, the work function metal layer 32, and the low resistance metal layer 34 flush with the surface of the interlayer dielectric layer 22. Since the present embodiment is manufactured according to the process of manufacturing the gate last (high-k last), the high-k dielectric layer 26, the bottom metal barrier layer 28, the bottom metal barrier layer 30, and the work function metal layer 32 are preferably U-shaped in cross section. If the present invention is fabricated according to the high-k first process, the high-k dielectric layer 26 preferably has a straight cross-section, and the bottom metal barrier layer 28, the bottom metal barrier layer 30, and the work function metal layer 32 have U-shaped cross-sections, which is also within the scope of the present invention.
In the present embodiment, dielectric layer 24 preferably comprises a silicide layer, such as silicon dioxide (SiO)2) Silicon nitride (SiN) or silicon oxynitride (SiON), but does not exclude dielectric materials that may be selected from high dielectric constants. Bottom metal barrier layer 28 preferably comprises titanium nitride (TiN), and bottom metal barrier layer 30 preferably comprises tantalum nitride (TaN), but is not limited thereto.
The high-k dielectric layer 26 comprises a dielectric material having a dielectric constant greater than 4, for example selected from the group consisting of oxideHafnium (hafnium oxide, HfO)2) Hafnium silicate oxide (HfSiO)4) Hafnium silicate oxynitride (HfSiON), aluminum oxide (Al)2O3) Lanthanum oxide (La)2O3) Tantalum oxide (Ta), and a process for producing the same2O5) Yttrium oxide (Y)2O3) Zirconium oxide (ZrO)2) Strontium titanate (SrTiO), strontium titanate oxide (srf)3) Zirconium silicate oxide (ZrSiO)4) Hafnium zirconate (HfZrO) oxide4) Strontium bismuth tantalum oxide (SrBi)2Ta2O9SBT), lead zirconate titanate (PbZr)xTi1-xO3PZT), barium strontium titanate (Ba)xSr1- xTiO3BST), or combinations thereof.
The work function metal layer 32 is preferably used to adjust the work function of the metal gate to be formed for an N-type transistor (NMOS) or a P-type transistor (PMOS). If the transistor is an N-type transistor, the work function metal layer 32 can be made of a metal material with a work function of 3.9 electron volts (eV) to 4.3eV, such as titanium aluminide (TiAl), zirconium aluminide (ZrAl), tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide (HfAl), or TiAlC (titanium aluminum carbide), but not limited thereto; if the transistor is a P-type transistor, the work function metal layer 32 can be made of a metal material with a work function of 4.8eV to 5.2eV, such as titanium nitride (TiN), tantalum nitride (TaN), or tantalum carbide (TaC), but not limited thereto. Another top barrier layer (not shown) may be included between the work function metal layer 32 and the low resistance metal layer 34, wherein the material of the top barrier layer may include titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), and the like. The low resistance metal layer 34 may be selected from low resistance materials such as copper (Cu), aluminum (Al), tungsten (W), titanium aluminum (TiAl), cobalt tungsten phosphide (CoWP), and combinations thereof. Since the dummy gate is converted into the metal gate according to the metal gate replacement process, which is well known in the art, further description is omitted here.
It is noted that the present invention preferably adjusts the ratio of nitrogen to titanium in the bottom metal barrier layer 28 during the deposition thereof, so that different portions of the bottom metal barrier layer 28 may have different nitrogen to titanium ratios. More specifically, referring to fig. 2, fig. 2 is an enlarged schematic view of a portion of the composition structure of fig. 1, and as shown in fig. 2, the bottom metal barrier layer 28 deposited in the present embodiment can be roughly divided into three portions, i.e., an upper portion 36, a middle portion 38, and a lower portion 40, wherein the thickness of the upper portion 36, the middle portion 38, and the lower portion 40 is one third of the overall thickness of the bottom metal barrier layer 28. In addition, in the present embodiment, the upper half 36 is a nitrogen rich portion and the middle half 38 and the lower half 40 are each a titanium rich portion, or from the nitrogen to titanium ratio distribution, the nitrogen to titanium ratio of the upper half 36 is 1 to 1.2 to 1, the nitrogen to titanium ratio of the middle half 38 is 0.5 to 1, and the nitrogen to titanium ratio of the lower half 40 is 0.5 to 1. In other words, in the present embodiment, the upper half 36 of the bottom metal barrier layer 28 has a higher atomic ratio of nitrogen, and the middle half 38 and the lower half 40 have a higher atomic ratio of titanium.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a bottom metal barrier layer 28 of a semiconductor device according to another embodiment of the invention. As with the embodiment of fig. 2, the bottom metal barrier layer 28 deposited in this embodiment can be divided into three parts, namely, an upper part 36, a middle part 38 and a lower part 40, wherein the thickness of the upper part 36, the middle part 38 and the lower part 40 is one third of the total thickness of the bottom metal barrier layer 38. In the present embodiment, the middle half 38 is a nitrogen rich portion and the upper half 36 and the lower half 40 are each a titanium rich portion, or from the nitrogen to titanium ratio distribution, the nitrogen to titanium ratio of the middle half 38 is 1 to 1.2 to 1, the nitrogen to titanium ratio of the upper half 36 is 0.5 to 1, and the nitrogen to titanium ratio of the lower half 40 is 0.5 to 1. In other words, the middle half 38 of the bottom metal barrier layer 28 in this embodiment has a higher atomic ratio of nitrogen, while the upper half 36 and the lower half 40 have a higher atomic ratio of titanium.
In summary, the present invention provides two metal gate transistor architectures, wherein the bottom metal barrier layer of titanium nitride in the metal gate preferably has an upper half, a middle half and a lower half, and the upper half is a nitrogen-rich portion and the middle half and the lower half are each a titanium-rich portion, or the middle half is a nitrogen-rich portion and the upper half and the lower half are each a titanium-rich portion. According to the two metal gate transistor structures provided by the two embodiments, the invention can effectively solve the problem that the existing structure is easy to generate time-dependent dielectric breakdown (TDDB). It should be noted that, although the bottom metal barrier layer 28 made of titanium nitride is a multi-layer structure and the bottom metal barrier layer 30 made of tantalum nitride is a single-layer structure in the present embodiment, it is not excluded that the ratio of nitrogen to tantalum in the bottom metal barrier layer 30 is adjusted according to the foregoing embodiment, so that the bottom metal barrier layer 30 is divided into an upper half, a middle half and a lower half after deposition like the bottom metal barrier layer 28, and the upper half, the middle half and the lower half have the nitrogen-rich portion or the tantalum-rich portion respectively. For example, it is within the scope of the present invention to adjust the top half of the bottom metal barrier layer 30 to be nitrogen-rich and the middle and bottom halves to be tantalum-rich, or to adjust the middle half of the bottom metal barrier layer 30 to be nitrogen-rich and the top and bottom halves to be tantalum-rich, or to adjust the bottom half of the bottom metal barrier layer 30 to be nitrogen-rich and the top and middle halves to be tantalum-rich.
In addition, although the above embodiments are illustrated with planar transistors, in other variations, the semiconductor device of the present invention may be applied to non-planar transistors, such as Fin-FETs (Fin-FETs), where the substrate 12 illustrated in fig. 1-3 is correspondingly represented as a Fin structure formed on a substrate, and such embodiments are also within the scope of the present invention.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in the claims of the present invention should be covered by the present invention.

Claims (14)

1. A semiconductor device, comprising:
a substrate; and
a gate structure disposed on the substrate, the gate structure comprising:
a high dielectric constant dielectric layer disposed on the substrate; and
the bottom metal barrier layer is arranged on the high dielectric constant dielectric layer and comprises an upper half part, a middle half part and a lower half part, wherein the upper half part, the middle half part and the lower half part comprise titanium nitride, the upper half part is a nitrogen-rich part, and the middle half part and the lower half part are respectively a titanium-rich part.
2. The semiconductor device of claim 1, wherein the thickness of the upper half is one-third of the thickness of the bottom metal barrier layer.
3. The semiconductor device of claim 1, wherein the middle half has a thickness of one-third of the thickness of the bottom metal barrier layer.
4. The semiconductor device of claim 1, wherein the thickness of the lower half is one-third of the thickness of the bottom metal barrier layer.
5. The semiconductor device as defined in claim 1, wherein the ratio of nitrogen to titanium in the upper half is greater than 1 and less than or equal to 1.2.
6. The semiconductor device of claim 5, wherein the nitrogen to titanium ratio of the middle half is greater than or equal to 0.5 and less than 1.
7. The semiconductor device of claim 5, wherein the lower half has a nitrogen to titanium ratio greater than or equal to 0.5 and less than 1.
8. A semiconductor device, comprising:
a substrate; and
a gate structure disposed on the substrate, the gate structure comprising:
a high dielectric constant dielectric layer disposed on the substrate; and
a first bottom metal barrier layer disposed on the high-k dielectric layer, the first bottom metal barrier layer including an upper half, a middle half and a lower half, the middle half being a nitrogen-rich portion and the upper half and the lower half each being a titanium-rich portion;
a second bottom metal barrier layer directly on the first bottom metal barrier layer and comprising a different material than the first bottom metal barrier layer; and
a work function metal layer is directly on the second bottom metal barrier layer.
9. The semiconductor device of claim 8, wherein the thickness of the upper half is one-third of the thickness of the bottom metal barrier layer.
10. The semiconductor device of claim 8, wherein the middle half has a thickness of one-third of the thickness of the bottom metal barrier layer.
11. The semiconductor device of claim 8, wherein the thickness of the lower half is one-third of the thickness of the bottom metal barrier layer.
12. The semiconductor device of claim 8, wherein the nitrogen to titanium ratio of the middle half is greater than 1 and less than or equal to 1.2.
13. The semiconductor device as defined in claim 8, wherein a ratio of nitrogen to titanium of the upper half is greater than or equal to 0.5 and less than 1.
14. The semiconductor device of claim 8, wherein the lower half has a nitrogen to titanium ratio greater than or equal to 0.5 and less than 1.
CN201510467637.6A 2015-08-03 2015-08-03 Semiconductor device with a plurality of semiconductor chips Active CN106409889B (en)

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US14/840,041 US10008581B2 (en) 2015-08-03 2015-08-30 Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion
US15/981,913 US10290723B2 (en) 2015-08-03 2018-05-17 Semiconductor device with metal gate

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US9627484B1 (en) 2015-10-12 2017-04-18 International Business Machines Corporation Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer
US10147799B2 (en) * 2016-01-15 2018-12-04 Taiwan Semiconductor Manufacturing Company Limited Method of fabricating tantalum nitride barrier layer and semiconductor device thereof
US10367078B2 (en) * 2017-11-09 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and FinFET devices having shielding layers
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US11450569B2 (en) * 2020-09-18 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof

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Publication number Priority date Publication date Assignee Title
US7074680B2 (en) 2004-09-07 2006-07-11 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
US8564072B2 (en) * 2010-04-02 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a blocking structure and method of manufacturing the same
US9755039B2 (en) * 2011-07-28 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a metal gate electrode stack
US8847333B2 (en) * 2011-09-01 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Techniques providing metal gate devices with multiple barrier layers
US8766379B2 (en) * 2011-09-22 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer
US8652890B2 (en) * 2012-02-29 2014-02-18 GlobalFoundries, Inc. Methods for fabricating integrated circuits with narrow, metal filled openings
US9384984B2 (en) * 2013-09-03 2016-07-05 United Microelectronics Corp. Semiconductor structure and method of forming the same
US9583362B2 (en) * 2014-01-17 2017-02-28 Taiwan Semiconductor Manufacturing Company Ltd. Metal gate structure and manufacturing method thereof

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US10290723B2 (en) 2019-05-14
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US20180269308A1 (en) 2018-09-20
US10008581B2 (en) 2018-06-26

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