CN106409712B - The detection method of metallic film - Google Patents
The detection method of metallic film Download PDFInfo
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- CN106409712B CN106409712B CN201610853043.3A CN201610853043A CN106409712B CN 106409712 B CN106409712 B CN 106409712B CN 201610853043 A CN201610853043 A CN 201610853043A CN 106409712 B CN106409712 B CN 106409712B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N2021/557—Detecting specular reflective parts on sample
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Abstract
A kind of detection method of metallic film, comprising the following steps: provide semiconductor substrate, the surface of the semiconductor substrate has metallic film, the surface branch center region of the semiconductor substrate and the fringe region for surrounding the central area；Multiple predeterminated positions in the fringe region, detection light reflectance value；According to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, judge whether the metallic film exception occurs.The yield that the present invention program with the abnormal conditions of real-time identification metallic film, can be effectively prevented from the product formed on a semiconductor substrate reduces.
Description
Technical field
The present invention relates to field of semiconductor technology, especially a kind of detection method of metallic film.
Background technique
In semiconductor processing, the connection between device is realized by metal line, realizes the transmitting of electric signal.It is specific and
Speech needs to form metallic film by depositing operation or sputtering technology, then mark figure with formed interconnection metallization lines and
Fill through-hole.
With the Highgrade integration of semiconductor devices and the progress of high performance, the normalization of metallic film also proposed
Increasingly higher demands, the alignment between type, dimensional accuracy and the metallic film and wafer including metallic film
Precision.
For example, will affect conduction rate if the metal types using mistake form film, even resulting in component failure.
If after the metallic film that the size of metallic film greater than specification is preset, is deposited on crystal round fringes position is easy to cause
The defect of continuous technique.Such as columnar metal is caused to remove defect (metal pillar peeling defect), and then lead
Electric layer short circuit (bridge) phenomenon, reduces the yield of product.By taking tungsten depositing operation as an example, preset if the size of W film is greater than
Specification extends to the fringe region of wafer, since the edge of wafer is arc-shaped in the longitudinal direction, is in radiused ramp region
W film on (bevel area) will be unable to be removed by subsequent chemical-mechanical polishing (CMP) technique.For sputtered aluminum technique, when
Aluminium film extends to the fringe region of wafer, and aluminium etching technics fails the aluminium film removal on radiused ramp region completely
When, there is also the risks of peeling-off defect.And remaining metallic film is once peeling-off (peeling), it would be possible to
The form of metallic particles falls on the functional area of wafer, and then causes short circuit phenomenon.
If metallic film size is less than default specification, since third edge pattern lacks, it is also possible to cause in crystal round fringes
The problem of yield at place reduces.
If the alignment precision between metallic film and wafer is inadequate, overall offset has occurred, namely centrosymmetric
Different zones, while there is a situation where metallic film sizes to be greater than and be less than default specification, this would be possible to lead to above-mentioned two
Kind problem occurs simultaneously, reduces the yield of wafer.
What is generallyd use in the prior art is the processing mode for delaying detection or reaction type error correction.Specifically, to machine
It, just can be to adjust the technological parameter for forming metallic film, and the alignment to metallic film and wafer when platform carries out routine inspection
Precision is controlled, or after low yield (low yield) event occurs, can just be searched reason and be traced back to producing line.?
In existing processing mode, since feedback cycle is longer, it is larger that caused harm when problem occurs.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of detection methods of metallic film, can be with real-time identification metallic film
Abnormal conditions, be effectively prevented from the product formed on a semiconductor substrate yield reduce.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of detection method of metallic film, including following step
It is rapid: to provide semiconductor substrate, the surface of the semiconductor substrate has metallic film, the surface branch center of the semiconductor substrate
Region and the fringe region for surrounding the central area；Multiple predeterminated positions in the fringe region detect light reflectivity
Value；According to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, whether the metallic film is judged
Occur abnormal.
Optionally, the multiple predeterminated position includes: in being distributed in the first test point other than outer edge line and being distributed in
The second test point within edge line, the outer edge line are on the basis of the edge of the semiconductor substrate to contract first
What distance obtained, the inward flange line is to be obtained on the basis of the edge of the semiconductor substrate to contract second distance,
The first distance is less than the second distance.
Optionally, according to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, described in judgement
If whether metallic film occurs abnormal including: the light reflectivity value of at least one first test point in the preset threshold
Within the scope of and/or at least one second test point light reflectivity value exceed the preset threshold range, then judge institute
It states metallic film and exception occurs.
Optionally, judge that the metallic film occurs abnormal including: if there is the first test point described at least one
Light reflectivity value is within the preset threshold range, and there are the light reflectivity values of the second test point described at least one to surpass
The preset threshold range out then judges that the pattern of the metallic film shifts.
Optionally, judge that the metallic film occurs abnormal including: if there is the first test point described at least one
Light reflectivity value is within the preset threshold range, and the light reflectivity value of whole second test points is positioned at described
Within preset threshold range, then judge that the size of the metallic film is greater than default specification.
Optionally, judge that the metallic film occurs abnormal including: if there is the second test point described at least one
Light reflectivity value exceeds the preset threshold range, and the light reflectivity value of whole first test points is beyond described pre-
If threshold range, then judge that the size of the metallic film is less than default specification.
Optionally, multiple first test points and the central point of the semiconductor substrate are equidistant, multiple second inspections
Measuring point and the central point of the semiconductor substrate are equidistant.
Optionally, multiple first test points are on the same circumference using the central point of the semiconductor substrate as the center of circle
In evenly distributed, multiple second test points are on the same circumference using the central point of the semiconductor substrate as the center of circle in equal
Even arrangement.
Optionally, the detection method of the metallic film further include: for the light reflectivity of multiple first test points
Value selects the light reflectivity value closest to the preset threshold range central value as the first extreme point；For multiple institutes
The light reflectivity value for stating the second test point, select the light reflectivity value farthest away from the preset threshold range central value as
Secondary extremal point；Record first extreme point and secondary extremal point.
Optionally, the material of the metallic film is metal simple-substance or metallic compound.
Optionally, the formation process of the metallic film is selected from: depositing operation and sputtering technology.
Optionally, the detection light reflectance value includes: light reflectivity value described in the light source detection using preset wavelength, institute
Stating preset wavelength includes 100 nanometers to 1000 nanometers.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
The embodiment of the present invention provides semiconductor substrate, and the surface of the semiconductor substrate has metallic film, described partly to lead
The surface branch center region of body substrate and the fringe region for surrounding the central area；It is multiple default in the fringe region
Position, detection light reflectance value；According to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, judgement
Whether the metallic film there is exception.It, can be with the abnormal feelings of real-time identification metallic film using the scheme of the embodiment of the present invention
Condition, the yield for being effectively prevented from the product formed on a semiconductor substrate reduce.
Further, by the way that in the first test point and the second test point detection light reflectance value, the embodiment of the present invention can be tied
The multiple light reflectivity values obtained are closed, the dimensional error type of the metallic film are further judged, thus in technical process
The problem of being likely to occur type is prejudged, and is helped to reduce investigation step, is improved and solve efficiency.
Further, the embodiment of the present invention can store the metallic film in the abnormal conditions for detecting metallic film
Exception record and issue information warning, effectively operator is reminded to handle in time, reduces and the frequency of same problem occurs again
Rate is effectively reduced loss caused by same type problem.
Detailed description of the invention
Fig. 1 is the flow chart of the detection method of one of embodiment of the present invention metallic film；
Fig. 2 is the schematic top plan view of one of embodiment of the present invention semiconductor substrate；
Fig. 3 is the diagrammatic cross-section of one of embodiment of the present invention semiconductor substrate；
Fig. 4 is the schematic top plan view of the semiconductor substrate under one of embodiment of the present invention metallic film abnormal conditions.
Specific embodiment
As previously mentioned, with the Highgrade integration of semiconductor devices and the progress of high performance, to the specification of metallic film
Property also proposed increasingly higher demands, type, dimensional accuracy and the metallic film and wafer including metallic film
Between alignment precision.But in the prior art, there is no the methods of real-time detection, to the normalization of the metallic film
Judged, once metallic film abnormal problem occurs, often leads to massive losses.
The present inventor has found after study, the above problem it is crucial that is generallyd use in the prior art is to prolong
The processing mode of detection or reaction type error correction afterwards.Specifically, when carrying out routine inspection to board just gold can be formed with adjustment
Belong to the technological parameter of film, and the alignment precision of metallic film and wafer is controlled, or low yield (low is occurring
Yield) after event, it can just search reason and trace back to producing line.In existing processing mode, since feedback cycle is longer,
Caused harm is larger when generation problem.
The embodiment of the present invention provides semiconductor substrate, and the surface of the semiconductor substrate has metallic film, described partly to lead
The surface branch center region of body substrate and the fringe region for surrounding the central area；It is multiple default in the fringe region
Position, detection light reflectance value；According to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, judgement
Whether the metallic film there is exception.It, can be with the abnormal feelings of real-time identification metallic film using the scheme of the embodiment of the present invention
Condition, the yield for being effectively prevented from wafer reduce.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 1 is the flow chart of the detection method of one of embodiment of the present invention metallic film.Referring to Fig.1, the metal
The detection method of film may include step S101 to step S103:
Step S101: providing semiconductor substrate, and the surface of the semiconductor substrate has metallic film, the semiconductor lining
The surface branch center region at bottom and the fringe region for surrounding the central area.
Step S102: multiple predeterminated positions in the fringe region, detection light reflectance value.
Step S103: according to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, judge institute
State whether metallic film exception occurs.
In the specific implementation of step S101, semiconductor substrate is provided, the surface of the semiconductor substrate has metal foil
Film, the surface branch center region of the semiconductor substrate and the fringe region for surrounding the central area.
Wherein, the material of the semiconductor substrate can be silicon, germanium, SiGe, silicon carbide, GaAs or gallium indium, go back
It can be the germanium substrate on the silicon substrate or insulator on insulator.
Metallic film can directly or indirectly be located in semiconductor substrate, that is, neighbour's material below metallic film
It can be semiconductor substrate itself, or the other materials being also possible in semiconductor substrate, such as (the oxidation of various dielectric layers
Object, nitride etc.).Typically, metallic film is formed by depositing operation or sputtering technology, positioned at the center of semiconductor substrate
Region and the part edge region for surrounding the central area.It will be apparent to a skilled person that forming the gold
Before belonging to film, it is nonmetallic one or more layers can also to be formed via other semiconductor process steps on the semiconductor substrate
Layer or metal layer, the invention is not limited in this regard.
Specifically, for a certain concrete technology formed metallic film, can be arranged in the edge region outer edge line and
Inward flange line, the edge for meeting the metallic film of specification should be between the outer edge line and inward flange line.Wherein, outside
The distance of the central area of edge linear distance semiconductor substrate is distal to the distance of inward flange linear distance central area.Specifically, outer
Edge line is to be obtained on the basis of the edge of the semiconductor substrate to contract first distance, and inward flange line is with described half
It is obtained on the basis of the edge of conductor substrate to contract second distance, the first distance is less than the second distance.
It is the schematic top plan view of one of embodiment of the present invention semiconductor substrate referring to Fig. 2 and Fig. 3, Fig. 2, Fig. 3 is this
The diagrammatic cross-section of one of inventive embodiments semiconductor substrate.In semiconductor substrate 201, there is metallic film 202.It is right
In the metallic film 202 for meeting specification, edge should be between outer edge line 211 and inward flange line 212.
Specifically, the position except the outer edge line 211, should not be formed with metallic film 202.Further
Ground if the first test point is arranged except the outer edge line 211, and is pointed out in the first detection and has detected metallic film
202 exist, it can be determined that the size of the metallic film 202 is greater than default specification or metallic film 202 and semiconductor substrate
Alignment precision between 201 is inadequate, deviates to the locality of first test point.
Position within the inward flange line 212, should be completely covered with metallic film 202, should not detect close
Adjacent material (such as substrate, dielectric layer etc.).Further, if the second test point is arranged within the inward flange line 212, and
It not is the metallic film 202 in the material that the second test point detects, it can be determined that the size of the metallic film 202 is less than
Alignment precision between default specification or metallic film 202 and semiconductor substrate 201 is inadequate, to the position of second test point
The opposite direction offset set.
With continued reference to Fig. 1, in the specific implementation of step S102, multiple predeterminated positions in the fringe region, inspection
Survey light reflectivity value.
Further, except the outer edge line, the first test point of setting detects light reflectivity value, described
Within inward flange line, the second test point of setting detects light reflectivity value.
Wherein it is possible to which especially there is detection material using the optical thin film measuring equipment with detection light reflectivity function
Expect the device, such as elliptical polarization spectroscopy, spectrophotometer etc. of micro-structure function.The invention is not limited in this regard.
In the specific implementation of step S103, according to the light reflectivity value and preset threshold range of the multiple predeterminated position
Relationship, judge whether the metallic film exception occurs.
Since the light reflectivity value of the metallic film has incomplete phase with neighbour's material (such as substrate, dielectric layer etc.)
Same light reflectivity value range, can preset the threshold range of light reflectivity according to the thickness of metallic film, at grading factors, and
And pass through the detection light reflectance value inside and outside the forming region of the metallic film, it can be determined that whether formed according to default specification
Metallic film.
Specifically, if the light reflectivity value of at least one first test point is within the preset threshold range,
Or the light reflectivity value of at least one second test point exceeds the preset threshold range, or exists simultaneously at least
The light reflectivity value of one first test point within the preset threshold range and at least one it is described second detection
The light reflectivity value of point exceeds the case where preset threshold range, then it is abnormal to judge that the metallic film occurs.
Fig. 4 is the schematic top plan view under one of embodiment of the present invention metallic film abnormal conditions.Referring to Fig. 4, half
On conductor substrate 301, except outer edge line 311, the first test point 321 of setting detects light reflectivity value, in inner edge
Within edge line 312, the second test point 322 of setting detects light reflectivity value.
When the light reflectivity obtained via the detection of the first test point 321 is in the preset threshold range of the metallic film 303
When interior, it can be determined that detect the metallic film 303 except outer edge line 311, then may determine that the metallic film
303 there is exception, such as size is greater than the alignment precision between default specification or metallic film 303 and semiconductor substrate 301 not
It is enough, to being located proximate to for the first test point 321.
When the light reflectivity obtained via the detection of the second test point 322 exceeds the preset threshold model of the metallic film 303
When enclosing, it can be determined that fail to detect the metallic film 303 within interior edge line 312, then may determine that the metal
There is exception in film 303, such as size is less than the alignment essence between default specification or metallic film 303 and semiconductor substrate 301
Degree not enough, deviates from the position of the second test point 322.
It is understood that the test point of setting is more, it is different can more accurately to judge whether metallic film 303 occurs
Often.
It continues to refer to figure 1, in the specific implementation of step S103, by the number for combining the multiple light reflectivity values obtained
According to, the Exception Type of the metallic film can be prejudged, such as prejudge the metallic film whether have occurred it is whole partially
It moves and whether the size of the metallic film is more than or less than default specification.
Further, if there is the light reflectivity value of the first test point described at least one in the preset threshold range
Within, and there are the light reflectivity values of the second test point described at least one to exceed the preset threshold range, then judges institute
The pattern for stating metallic film shifts.Specifically, not only detecting metallic film except outer edge line, but also in interior edge line
Within detect neighbour's material, the pattern that can be judged to metallic film in advance shifts.
If there is the first test point described at least one light reflectivity value within the preset threshold range, and
The light reflectivity value of whole second test points is located within the preset threshold range, then judges the metallic film
Size is greater than default specification.Specifically, only detecting metallic film except outer edge line, but fail within interior edge line
Detect neighbour's material, the size that can be judged to metallic film in advance is greater than default specification.
Exceed the preset threshold range if there is the light reflectivity value of the second test point described at least one, and complete
The light reflectivity value of first test point in portion exceeds the preset threshold range, then judges that the size of the metallic film is small
In default specification.Specifically, only detecting neighbour's material within interior edge line, but fail to detect except outer edge line
Metallic film, the size that can be judged to metallic film in advance are less than default specification.
Further, the dimensional error type of the metallic film obtained according to judgement, the embodiment of the present invention can be right
The problem of being likely to occur in technical process is prejudged, to effectively improve solution efficiency.
In the prior art, forming metal layer in crystal round fringes or side will lead to metal-stripping defect, in backside of wafer
Forming metal layer can make wafer stress generate variation, and fragmentation is caused when serious.
Deposition of metal is being implemented to deposit in the marginal position of wafer to bring the defect of subsequent technique in order to prevent
When technique forms metallic film, generallys use shade ring (shadow ring) and blocked at the edge of wafer, to ensure to crystalline substance
Only within the scope of the shade ring deposition reaction occurs for the reaction gas of circular surfaces input.
Since there are distances between shade ring and wafer, to avoid the crystal round fringes position immediately below shade ring from forming gold
Belong to film, in crystalline substance back region, can by the front face normal direction of wafer input brilliant back gas (backside gas) with
It liquidates with the reaction gas of front input, to effectively avoid in wafer side and brilliant antiform into metal deposition layer.
In the process, therefore, to assure that the annular center of the shade ring is overlapped and described with the center of circle of the wafer
The input pressure of reaction gas and brilliant back gas is suitable, to ensure the dimensional accuracy and the metallic film of metallic film
Alignment precision between wafer.
It in specific implementation, can be pre- when the pattern of the metallic film shifts after the exception record is deposition
The annular center for being judged to the shade ring and the alignment precision in the center of circle of the wafer are inadequate, and then preferentially set to the shade ring
It is standby to be checked.
When the size of the metallic film is greater than default specification after the exception record is deposition, it can be judged to the crystalline substance in advance
The input pressure for carrying on the back gas is insufficient, and then is preferentially examined to the technological parameter of the brilliant back gas, such as input pressure parameter
It looks into.
When the size of the metallic film is less than default specification after the exception record is deposition, it can be judged to crystal face in advance
Reacting gas concentration or insufficient pressure, and then preferentially to the concentration ginseng of the technological parameter of the reaction gas, such as reaction gas
Several or input pressure parameter is checked.
Using the embodiment of the present invention, by that can combine in the first test point and the second test point detection light reflectance value
The multiple light reflectivity values obtained, further judge the dimensional error type of the metallic film.Thus to can in technical process
Energy problem type is prejudged, and is helped to reduce investigation step, is improved and solve efficiency.
In specific implementation, multiple first test points can be set to the central point of the semiconductor substrate etc.
Away from, and by multiple second test points set equidistant with the central point of the semiconductor substrate.Namely with described half
The central point of conductor substrate is the center of circle, on the circumference with different radii, takes multiple points as test point.
Since under conventional depositing operation or sputtering technology, the metallic film of formation is usually with the center of semiconductor substrate
Point is the center of circle, and edge is rendered into circle, so taking test point on the circumference using the central point of semiconductor substrate as the center of circle, has
Help increase the accuracy of judgement.
Further, multiple first test points are using the central point of the semiconductor substrate as the same circumference in the center of circle
It is in evenly distributed for going up, and multiple second test points are on the same circumference using the central point of the semiconductor substrate as the center of circle
It is evenly distributed.
In specific implementation, by the way of evenly distributed, help to obtain conducive to less test point more accurate
Judging result, especially during judging that the pattern of the metallic film shifts.This is because if multiple detections
Point is tightly bunched together, it may be difficult to indicate that the position far from test point is abnormal with the presence or absence of metallic film.
As a non-limitative example, first test point and the second test point can be respectively set to six uniformly
The test point of arrangement.The arrangement mode of six test points helps to make test point on the basis of avoiding the calibration notch of wafer
In horizontal and vertical linear symmetric arrays.
It in specific implementation, can also be to the light of the metallic film in addition to the exception record of the storage metallic film
Reflectance value is recorded, and by long-term data tracking situation, judges the technical capability of the formation process of the metallic film
Intensity.
Specifically, it for the light reflectivity value of multiple first test points, selects closest to the preset threshold range
The light reflectivity value of central value is as the first extreme point.For the light reflectivity value of multiple second test points, selection
Farthest away from the preset threshold range central value the light reflectivity value as secondary extremal point.Record first extreme point
With the secondary extremal point.
Since first test point is distributed in other than outer edge line, closest to the institute of the preset threshold range central value
It states light reflectivity value and represents and be abnormal the maximum point of possibility in the first test point；Since second test point is distributed
Within inward flange line, the light reflectivity value farthest away from the preset threshold range central value is represented in the second test point
In be abnormal the maximum point of possibility.
Further, only record is abnormal the maximum point of possibility and helps to simplify data volume, is carrying out long-term number
According in tracking work, the working efficiency of analysis work is effectively improved.
In specific implementation, the material of metallic film can be metal simple-substance or metallic compound.Such as the metal list
Matter can be selected from tungsten, titanium, aluminium, copper, cobalt, nickel, vanadium, silver and gold, such as the metallic compound may include titanium nitride or nickel vanadium
Alloy.
It is understood that the light reflectivity value of the material of metallic film and neighbour's material (such as substrate, dielectric layer etc.)
Difference is bigger, more facilitates to make accurate judgement with the presence or absence of abnormal to metal material.The embodiment of the present invention is to metallic film
The material of material and neighbour's material is not particularly limited.
In specific implementation, the formation process of the metallic film can be selected from depositing operation and sputtering technology.Preferably,
The embodiment of the present invention is applied to have more preferably effect: tungsten depositing operation, sputtered aluminum technique, titanium depositing operation or nitrogen in following technique
Change titanium depositing operation.
Further, the treatment temperature of the tungsten depositing operation can be 350 degrees Celsius to 450 degrees Celsius, reaction pressure
It can be 90Torr to 300Torr, the thickness of the W film of formation can be 100 nanometers to 800 nanometers.The present invention is to formation institute
The concrete technology for stating tungsten metallic film is not intended to be limited in any.
The treatment temperature of the sputtered aluminum technique can be 250 degrees Celsius to 450 degrees Celsius, reaction pressure can for less than
10mT, the thickness of the aluminium film of formation can be 100 nanometers to 6 microns.The present invention is specific to the formation aluminum metal film
Technique is not intended to be limited in any.
In specific implementation, can using preset wavelength light source detection described in light reflectivity value, with ensure to obtain it is clear,
Effective light reflectivity value.As a non-limitative example, the preset wavelength includes 100 nanometers to 1000 nanometers.
In specific implementation, when judging that the metallic film occurs abnormal, the exception record of the metallic film is stored
And/or issue information warning.
Wherein, the exception record for storing the metallic film helps chronically to carry out data tracking, effectively to analyze gold
Belong to the technical capability intensity of the formation process of film.It specifically, can be by being multiplexed in the test equipment of the light reflectivity value
Memory module stored, or be transmitted in other storage equipment of user and store, the present invention is without limitation.
The sending information warning may include issuing alarm sound or display alarm information.Specifically, alarm mentions
Show that sound can be issued by the electroacoustic device in the test equipment of the multiplexing light reflectivity value, additional electroacoustic can also be used
Device issues.Warning message can the display device in the test equipment by being multiplexed the light reflectivity value be shown, or
Person is transmitted in other display equipment of user and shows, the present invention is without limitation.
The embodiment of the present invention can store the abnormal note of the metallic film in the abnormal conditions for detecting metallic film
Information warning is recorded and issued, effectively operator is reminded to handle in time, reduces the frequency that same problem occurs again, effectively
Reduce loss caused by same type problem.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of detection method of metallic film, which comprises the following steps:
There is provided semiconductor substrate, the surface of the semiconductor substrate has a metallic film, in the surface point of the semiconductor substrate
Heart district domain and the fringe region for surrounding the central area；
Multiple predeterminated positions in the fringe region, detection light reflectance value；
According to the light reflectivity value of the multiple predeterminated position and the relationship of preset threshold range, whether the metallic film is judged
Occur abnormal；
Wherein, the multiple predeterminated position includes: the first test point being distributed in other than outer edge line and is distributed in inward flange line
Within the second test point, the outer edge line is to be obtained on the basis of the edge of the semiconductor substrate to contract first distance
It arriving, the inward flange line is to be obtained on the basis of the edge of the semiconductor substrate to contract second distance, described
One distance is less than the second distance.
2. the detection method of metallic film according to claim 1, which is characterized in that according to the multiple predeterminated position
The relationship of light reflectivity value and preset threshold range, if judging whether the metallic film occurs abnormal including: at least one
The light reflectivity value of first test point is within the preset threshold range and/or at least one described second test point
Light reflectivity value exceed the preset threshold range, then it is abnormal to judge that the metallic film occurs.
3. the detection method of metallic film according to claim 2, which is characterized in that it is different to judge that the metallic film occurs
Often include:
If there is the first test point described at least one light reflectivity value within the preset threshold range, and exist
The light reflectivity value of at least one second test point exceeds the preset threshold range, then judges the figure of the metallic film
Case shifts.
4. the detection method of metallic film according to claim 2, which is characterized in that it is different to judge that the metallic film occurs
Often include:
If there is the first test point described at least one light reflectivity value within the preset threshold range, and all
The light reflectivity value of second test point be located within the preset threshold range, then judge the size of the metallic film
Greater than default specification.
5. the detection method of metallic film according to claim 2, which is characterized in that it is different to judge that the metallic film occurs
Often include:
Exceed the preset threshold range if there is the light reflectivity value of the second test point described at least one, and all
The light reflectivity value of first test point exceeds the preset threshold range, then it is pre- to judge that the size of the metallic film is less than
If specification.
6. the detection method of metallic film according to claim 1, which is characterized in that multiple first test points and institute
The central point for stating semiconductor substrate is equidistant, and multiple second test points and the central point of the semiconductor substrate are equidistant.
7. the detection method of metallic film according to claim 6, which is characterized in that multiple first test points with
The central point of the semiconductor substrate is on the same circumference in the center of circle in evenly distributed, and multiple second test points are with described
The central point of semiconductor substrate is on the same circumference in the center of circle in evenly distributed.
8. the detection method of metallic film according to claim 6, which is characterized in that further include:
For the light reflectivity value of multiple first test points, select closest to the described of the preset threshold range central value
Light reflectivity value is as the first extreme point；
For the light reflectivity value of multiple second test points, select farthest away from described in the preset threshold range central value
Light reflectivity value is as secondary extremal point；
Record first extreme point and secondary extremal point.
9. the detection method of metallic film according to claim 1, which is characterized in that the material of the metallic film is gold
Belong to simple substance or metallic compound.
10. the detection method of metallic film according to claim 1, which is characterized in that the formation work of the metallic film
Skill is selected from:
Depositing operation and sputtering technology.
11. the detection method of metallic film according to claim 1, which is characterized in that the detection light reflectance value packet
It includes:
Light reflectivity value described in light source detection using preset wavelength, the preset wavelength include 100 nanometers to 1000 nanometers.
12. the detection method of metallic film according to claim 1, which is characterized in that further include:
When judging that the metallic film occurs abnormal, stores the exception record of the metallic film and/or issue information warning.
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| CN109459417A (en) * | 2018-11-01 | 2019-03-12 | 福建晶安光电有限公司 | A kind of method and apparatus for test pattern substrate |
| TWI772697B (en) | 2019-10-23 | 2022-08-01 | 華邦電子股份有限公司 | Method of monitoring semiconductor process |
| CN112802772B (en) * | 2019-11-13 | 2024-06-11 | 华邦电子股份有限公司 | Method for monitoring semiconductor process |
| CN111037127B (en) * | 2019-12-27 | 2022-02-15 | 厦门三安光电有限公司 | Screening system for wafer to be subjected to laser cutting and laser cutting device |
| CN113109647B (en) * | 2021-04-09 | 2022-04-29 | 长鑫存储技术有限公司 | Method and system for analyzing electrical defects and electrical parameters of conductive structure |
| CN113594056B (en) * | 2021-07-30 | 2024-04-16 | 上海华虹宏力半导体制造有限公司 | Method for detecting film |
| CN113466251B (en) * | 2021-08-05 | 2022-10-25 | 长鑫存储技术有限公司 | Equipment detection method and system |
| US11927526B2 (en) | 2021-08-05 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and system for detecting cleanliness in cavity of target device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282660A (en) * | 2002-03-20 | 2003-10-03 | Fujitsu Ltd | Semiconductor manufacturing apparatus and film forming method |
| CN1447112A (en) * | 2002-03-27 | 2003-10-08 | 株式会社东芝 | Method of judging residual film through optical measurement |
| KR20040049908A (en) * | 2002-12-05 | 2004-06-14 | 삼성전자주식회사 | System for detecting deposited film on wafer using dual sensor |
| US7368397B2 (en) * | 2005-12-29 | 2008-05-06 | Dongbu Electronics Co., Ltd. | Method for monitoring edge bead removal process of copper metal interconnection |
| CN203277332U (en) * | 2013-05-15 | 2013-11-06 | 中芯国际集成电路制造(北京)有限公司 | Detecting system of wafer edge cleaning technology |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100694597B1 (en) * | 2005-07-28 | 2007-03-13 | 삼성전자주식회사 | Method for inspecting a defect of pattern in semiconductor device |
-
2016
- 2016-09-26 CN CN201610853043.3A patent/CN106409712B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282660A (en) * | 2002-03-20 | 2003-10-03 | Fujitsu Ltd | Semiconductor manufacturing apparatus and film forming method |
| CN1447112A (en) * | 2002-03-27 | 2003-10-08 | 株式会社东芝 | Method of judging residual film through optical measurement |
| KR20040049908A (en) * | 2002-12-05 | 2004-06-14 | 삼성전자주식회사 | System for detecting deposited film on wafer using dual sensor |
| US7368397B2 (en) * | 2005-12-29 | 2008-05-06 | Dongbu Electronics Co., Ltd. | Method for monitoring edge bead removal process of copper metal interconnection |
| CN203277332U (en) * | 2013-05-15 | 2013-11-06 | 中芯国际集成电路制造(北京)有限公司 | Detecting system of wafer edge cleaning technology |
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