CN106405959A - Electrostatic protection structure of liquid crystal panel - Google Patents
Electrostatic protection structure of liquid crystal panel Download PDFInfo
- Publication number
- CN106405959A CN106405959A CN201610899715.4A CN201610899715A CN106405959A CN 106405959 A CN106405959 A CN 106405959A CN 201610899715 A CN201610899715 A CN 201610899715A CN 106405959 A CN106405959 A CN 106405959A
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- Prior art keywords
- metal routing
- metal
- gnd
- routing
- gap
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides an electrostatic protection structure of a liquid crystal panel by aiming at the problem that static electricity cannot be well released when electrostatic voltage of a GND metal routing is extremely high in the prior art. The electrostatic protection structure of the liquid crystal panel comprises a plurality of arrayed GND metal routings, wherein two adjacent sides of every two adjacent GND metal routings are respectively connected with a third metal routing or a fourth metal routing; each GND metal routing at each of four corners of a GND metal routing array is connected with a second metal routing arranged at the periphery of the array through a fifth metal routing or a sixth metal routing, so that all the metal routings are connected to form a large GND network, and the electrostatic tolerance voltage is increased to a certain extent; and meanwhile, the third metal routing and the fourth metal routing are doped polycrystalline silicon, so that the release of the static electricity is accelerated, and the static electricity release time is shortened.
Description
Technical field
The present invention relates to liquid crystal panel field, more particularly, to a kind of electrostatic protection structure of liquid crystal panel.
Background technology
Low temperature polycrystalline silicon has the advantages that high mobility, therefore when carrying out pixel design, thin film transistor (TFT) TFT switch
The very little that W/L can design, thus the corresponding aperture opening ratio of pixel is relatively just relatively high, therefore low temperature polycrystalline silicon liquid crystal panel has
Greatly market competition advantage.
TFT-LCD can be divided into polysilicon (Poly-Si TFT) and non-crystalline silicon (a-Si TFT), and both difference is electricity crystalline substance
Bulk properties is different.Ordered state in a crystal grain (Grain) for the molecular structure of polysilicon is neat and directive, because
This electron mobility is faster 200-300 times than arranging mixed and disorderly non-crystalline silicon；Typically alleged TFT-LCD refers to non-crystalline silicon, technology
Maturation, is the main product of LCD.And polysilicon product then mainly comprise high temperature polysilicon (HTPS) and low temperature polycrystalline silicon (LTPS) two
Plant product.
Low temperature polycrystalline silicon (Low Temperature Poly-silicon；Abbreviation LTPS) Thin Film Transistor-LCD
In encapsulation process, by the use of quasi-molecule radium-shine as thermal source, laser light, after projection system, can produce energy and be uniformly distributed
Radium-shine light beam, be projeced on the glass substrate of amorphous silicon structures, when amorphous silicon structures glass substrate absorb quasi-molecule radium-shine
After energy, polysilicon structure can be transformed into, because whole processing procedure is all accomplished below at 600 DEG C, therefore general glass substrate
All applicable.
LTPS-TFT LCD has the advantages that high-resolution, response speed be fast, high brightness, high aperture, add due to
The silicon crystalline arrangement of LTPS-TFT LCD compared with a-Si orderliness so that electron mobility is relatively high more than 100 times, can be by periphery
Drive circuit makes on the glass substrate simultaneously, reaches target, save space and the cost driving IC of system combination.
In the design process, GND metal routing is enclosed in four weekly assembly settings one of array base palte to LTPS-TFT LCD
11, such as Fig. 1, GND metal routing 11, GOA drives area 12, Display panel area 13, and GND metal routing 11 is arranged on the surrounding of panel
Edge, the purpose of setting GND metal routing 11 is when there being electrostatic potential to produce, and can quickly will by GND metal routing
Electro-static Driven Comb falls, and prevents electrostatic from adding up and causing inside counter plate to wound, impact display.But this GND metal routing release is quiet
The function of electricity is limited, when electrostatic potential is too high, can cause wound of GND metal routing, or even impact internal wiring, makes
Become display bad.
Content of the invention
In order to strengthen the releasability of electrostatic to a certain extent, the present invention proposes a kind of electrostatic defending knot of liquid crystal panel
Structure.
The electrostatic protection structure of liquid crystal panel proposed by the present invention, including GND metal routing, the second metal routing, the 5th
Metal routing, the 6th metal routing, wherein
Described GND metal routing is closed circuit structure, and the outward flange along array base palte is arranged,
Described second metal routing is arranged on the outside of described GND metal routing, described second metal routing and described GND
Between the outward flange of metal routing, there is gap,
Described second metal routing passes through fifth metal cabling and/or the 6th metal routing phase with described GND metal routing
Even.
This electrostatic protection structure, indirectly increase GND metal routing metal width, reduce GND metal routing
Resistance, enhance the pressure amount of electrostatic of GND metal routing, reduce the risk that electrostatic wounds.
As to further improvement of the present invention, multiple described GND metal routings are arranged in the way of rectangular array, described
The row of rectangular array extend in a first direction, and the row of described rectangular array extends in a second direction, described first direction and described
Second direction is mutually perpendicular to, and is provided with the first gap between adjacent two row of described rectangular array, and adjacent the two of described rectangular array
In the ranks it is provided with the second gap.
Further, the adjacent both sides of the GND metal routing of adjacent two row are connected by the 3rd metal routing, described 3rd gold medal
Belong to cabling to extend in a second direction, described 3rd metal routing is arranged in described first gap, described 3rd metal routing
Length is equal with the width in described first gap.Two ends on the adjacent both sides of the GND metal routing of described adjacent two row
Place is respectively connected with described 3rd metal routing.
Further, the adjacent both sides of the GND metal routing of adjacent rows are connected by the 4th metal routing, described 4th gold medal
Belong to cabling to extend in a first direction, described 4th metal routing is arranged in described second gap, described 4th metal routing
Length is equal with the width in described second gap.Two ends on the adjacent both sides of the GND metal routing of described adjacent rows
Place is respectively connected with described 4th metal routing.
Such structure makes multiple GND metal routings connect into a huge wire netting, increased the release of electrostatic
Path, accelerates the release of electrostatic.
As to further improvement of the present invention, the rectangle of described second metal routing and the plurality of GND metal routing
It is provided with third space and the 4th gap, described third space extends along described first direction, described between the outward flange of array
4th gap extends along described second direction, the GND metal of four edges of the rectangular array of the plurality of GND metal routing
Cabling is passed through fifth metal cabling and/or the 6th metal routing respectively and is connected with the second metal routing, and fifth metal cabling is along the
One direction extends, and the 6th metal routing extends in a second direction, and described 6th metal routing is arranged in described third space, institute
The length stating the 6th metal routing is equal with the width of described third space；Described fifth metal cabling is arranged at the 4th gap
Interior, the length of described fifth metal cabling is equal with the width in described 4th gap.
In outside setting second metal routing of the multiple GND metal routings arranging in array, and make multiple GND metals
Cabling is connected with the second metal routing, defines a huge GND wire netting, has further speeded up the release of electrostatic, improves
The dosis tolerata of electrostatic potential.
As to further improvement of the present invention, in the first trip of described rectangular array and tail row, the GND metal of non-end is walked
Line is connected with described second metal routing by described fifth metal cabling respectively.First of described rectangular array is non-with tail row
The GND metal routing of end is connected with described second metal routing by described 6th metal routing respectively.Thus it is so that middle
GND metal routing on electrostatic quickly pass through the second metal routing release.
At least one of described the 3rd metal routing, the 4th metal routing, fifth metal cabling, the 6th metal routing gold
Belong to cabling to be made up of low temperature polycrystalline silicon.Ordered state in a crystal grain for the molecular structure of low temperature polycrystalline silicon is neat and the side of having
Tropism, therefore its electron mobility is very fast, faster than non-crystalline silicon 200～300 times, so the use of doping low temperature polycrystalline silicon
Further enhancing the rate of release of electrostatic, improve the releasability of electrostatic.
The electrostatic protection structure of liquid crystal panel proposed by the present invention, is equally applicable during LCD processing procedure, and prevention is sent out
Raw electrostatic breakdown phenomenon, by TFT periphery setting metal line, being formed for Electro-static Driven Comb path in TFT processing procedure front half section, fall
Low local current intensity, reduces the risk that electrostatic wounds.
Brief description
Hereinafter will be based on embodiment and refer to the attached drawing is being described in more detail to the present invention.Wherein：
GND metal routing structural representation in Fig. 1 display prior art；
Electrostatic protection structure schematic diagram containing two GND metal routings in Fig. 2 display embodiment；
Fig. 3 shows the electrostatic protection structure schematic diagram arranging GND metal routing in embodiment containing three row three；
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not according to actual ratio.
Specific embodiment
To describe the specific embodiment of the present invention below in conjunction with drawings and Examples in detail.
The terms such as the horizontal direction in embodiment, vertical direction, end are the directions of the position with respect to picture it is impossible to manage
Solve as limitation of the present invention.
As fig. 2 shows in the present invention, the electrostatic protection structure schematic diagram that two GND metal routings 11 are constituted.Two
Adjacent GND metal routing 11 is arranged as a line two row, and the direction along described row is second direction, first direction and described second
Direction is vertical, has the first gap 27, the phase of the GND metal routing 11 of adjacent two row between the GND metal routing of adjacent two row
Two ends on adjacent both sides are all connected by the 3rd metal routing 23, thus two GND metal routings 11 are connected as one,
Meanwhile, the 3rd metal routing 23 is located in the first gap 27, the width phase in the length of the 3rd metal routing 23 and the first gap 27
Deng it is ensured that shortest path when electrostatic transmits between two GND metal routings 11, shorten the time of Electro-static Driven Comb.
The outside of two GND metal routings 11 is provided with the second metal routing 22, the second metal routing 22 and described two
The outward flange of individual GND metal routing 11 has the third space 29 extending in a first direction, the 4th extending in a second direction respectively
Gap 30, preferably third space 29 are equal with the width in the 4th gap 30, when width is equal, are more beneficial for connecting up and real
Apply.Four edges of the second metal routing 22 pass through fifth metal cabling 25 or the 6th metal routing 26 and GND metal respectively
Cabling 11 is connected, and the 6th metal routing 26 is located in third space 29 and extends in a second direction, the 6th metal routing 26
Length is equal with the width of third space 29, and fifth metal cabling 25 is located in the 4th gap 30 and extends in a first direction, the
The length of five metal routings 25 is equal with the width in the 4th gap 30 it is ensured that electrostatic is in GND metal routing 11 and the second metal
Shortest path when transmitting between cabling 22, shortens the time of Electro-static Driven Comb.
Fig. 3 is the rectangular array that 9 GND metal routings 11 are arranged in three row three row, and the row of described rectangular array are along first
Direction extends, and the row of described rectangular array extends in a second direction, and described first direction and described second direction are mutually perpendicular to, institute
It is provided with the first gap 27 extending in a first direction, the adjacent rows of described rectangular array between adjacent two row stating rectangular array
Between be provided with the second gap 28 extending in a second direction.
Two ends on the adjacent both sides of GND metal routing between adjacent two row are all connected by the 3rd metal routing 23,
Two ends on the adjacent both sides of the GND metal routing between adjacent rows are all connected by the 4th metal routing 24, thus by institute
Some GND metal routings 11 are connected as an entirety, and meanwhile, the 3rd metal routing 23 is located in the first gap 27, the 3rd metal
The length of cabling 23 is equal with the width in the first gap 27, and the 4th metal routing 24 is located in the second gap 28, and the 4th metal is walked
The length of line 27 is equal with the width in the second gap 28, and the preferably first gap 27 is equal with the width in the second gap 28, more saves
Save space, makes the metal routing length between gap equal with gap width it is ensured that electrostatic is in adjacent GND metal routing simultaneously
Shortest path when transmitting between 11, shortens the time of Electro-static Driven Comb.
The periphery arranging GND metal routing 11 in three row three is provided with the second metal routing 22, the second metal routing 22 and institute
The outward flange stating GND metal routing 11 array has the third space 29 that extends in a first direction respectively, extends in a second direction
4th gap 30, preferably third space 29 are equal with the width in the 4th gap 30, when width is equal, be more beneficial for wiring and
Implement.Four edges of the second metal routing 22 pass through fifth metal cabling 25 or the 6th metal routing 26 and GND gold respectively
Belong to cabling 11 to be connected, the 6th metal routing 26 is located in third space 29 and extends along described second direction, and the 6th metal is walked
The length of line 26 is equal with the width of third space 29, and fifth metal cabling 25 is located in the 4th gap 30 and along described first party
To extension, the length of fifth metal cabling 25 equal with the width in the 4th gap 30 it is ensured that electrostatic in GND metal routing 11 and
Shortest path when transmitting between the second metal routing 22, shortens the time of Electro-static Driven Comb.
GND metal routing 11 positioned at first trip and the non-end of tail row is again by fifth metal cabling 25 and the second metal
Cabling 22 is connected, and the GND metal routing 11 of the non-end arranging with tail positioned at first is again by the 6th metal routing 26 and second
Metal routing 22 is connected, and thus with the second metal routing 22 of periphery, the array that GND metal routing is formed is connected into one
Individual big GND wire netting, adds somewhat to the withstanding voltage of electrostatic, advantageously in the release of electrostatic.
In preferably the 3rd metal routing 23, the 4th metal routing 24, fifth metal cabling 25, the 6th metal routing 26 extremely
Few one kind is made up of low temperature polycrystalline silicon, due to the ordered state in a crystal grain for the molecular structure of low temperature polycrystalline silicon be neat and
Directive, therefore its electron mobility is very fast, faster than non-crystalline silicon 200～300 times, so doping low temperature polycrystalline silicon
Using the rate of release that further enhancing electrostatic, improve the releasability of electrostatic.
Finally illustrate, above example is merely to illustrate technical scheme and unrestricted, although with reference to relatively
Good embodiment has been described in detail to the present invention, it will be understood by those within the art that, can be to the skill of the present invention
Art scheme is modified or equivalent, the objective without deviating from technical solution of the present invention and scope, and it all should be covered at this
In the middle of the right of invention.
Claims (10)
1. a kind of electrostatic protection structure of liquid crystal panel, including GND metal routing, the second metal routing, fifth metal cabling,
Six metal routings, wherein
Described GND metal routing is closed circuit structure, and the outward flange along array base palte is arranged,
Described second metal routing is arranged on the outside of described GND metal routing, described second metal routing and described GND metal
Between the outward flange of cabling, there is gap,
Described second metal routing is connected by fifth metal cabling and/or the 6th metal routing with described GND metal routing.
2. electrostatic protection structure according to claim 1 is it is characterised in that multiple described GND metal routing is with rectangle battle array
The mode of row is arranged, and the row of described rectangular array extend in a first direction, and the row of described rectangular array extends in a second direction, institute
State first direction and described second direction is mutually perpendicular to, between adjacent two row of described rectangular array, be provided with the first gap, described
It is provided with the second gap between the adjacent rows of rectangular array.
3. electrostatic protection structure according to claim 2 it is characterised in that adjacent two row GND metal routings adjacent
Both sides are passed through the 3rd metal routing and are connected, and described 3rd metal routing extends in a second direction, described 3rd metal routing setting
In described first gap, the length of described 3rd metal routing is equal with the width in described first gap.
4. electrostatic protection structure according to claim 3 it is characterised in that described adjacent two row GND metal routings
Two ends on adjacent both sides be respectively connected with described 3rd metal routing.
5. electrostatic protection structure according to claim 2 it is characterised in that the GND metal routing of adjacent rows adjacent
Both sides are passed through the 4th metal routing and are connected, and described 4th metal routing extends in a first direction, described 4th metal routing setting
In described second gap, the length of described 4th metal routing is equal with the width in described second gap.
6. electrostatic protection structure according to claim 5 is it is characterised in that GND metal routing in described adjacent rows
Two ends on adjacent both sides be respectively connected with described 4th metal routing.
7. electrostatic protection structure according to claim 2 it is characterised in that described second metal routing with the plurality of
It is provided with third space and the 4th gap, described third space is along described between the outward flange of the rectangular array of GND metal routing
First direction extends, and described 4th gap extends along described second direction, and the four of the rectangular array of the plurality of GND metal routing
The GND metal routing of individual edge passes through fifth metal cabling respectively and/or the 6th metal routing is connected with the second metal routing,
Fifth metal cabling extends in a first direction, and the 6th metal routing extends in a second direction, and described 6th metal routing is arranged at
In described third space, the length of described 6th metal routing is equal with the width of described third space；Described fifth metal is walked
Line is arranged in the 4th gap, and the length of described fifth metal cabling is equal with the width in described 4th gap.
8. electrostatic protection structure according to claim 3 is it is characterised in that non-in the first trip of described rectangular array and tail row
The GND metal routing of end is connected with described second metal routing by described fifth metal cabling respectively.
9. electrostatic protection structure according to claim 3 is it is characterised in that first of described rectangular array is non-with tail row
The GND metal routing of end is connected with described second metal routing by described 6th metal routing respectively.
10. according to the arbitrary described electrostatic protection structure of claim 3,4,6 it is characterised in that the 3rd described metal routing,
At least one of 4th metal routing, fifth metal cabling, the 6th metal routing are made up of low temperature polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610899715.4A CN106405959B (en) | 2016-10-13 | 2016-10-13 | A kind of electrostatic protection structure of liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610899715.4A CN106405959B (en) | 2016-10-13 | 2016-10-13 | A kind of electrostatic protection structure of liquid crystal display panel |
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| CN106405959A true CN106405959A (en) | 2017-02-15 |
| CN106405959B CN106405959B (en) | 2019-09-27 |
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|---|---|---|---|---|
| CN101825821A (en) * | 2008-12-26 | 2010-09-08 | 乐金显示有限公司 | Mother substrate for liquid crystal display device and method of fabricating the same |
| CN103926719A (en) * | 2014-04-25 | 2014-07-16 | 友达光电股份有限公司 | Display panel with electrostatic protection function |
| CN104701303A (en) * | 2015-03-30 | 2015-06-10 | 京东方科技集团股份有限公司 | Display device, array substrate and manufacturing method thereof |
| CN105097847A (en) * | 2015-09-15 | 2015-11-25 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN204906858U (en) * | 2015-09-18 | 2015-12-23 | 江西合力泰科技有限公司 | Flexible line way board of display module assembly |
| CN105320337A (en) * | 2014-07-29 | 2016-02-10 | 南京瀚宇彩欣科技有限责任公司 | Electrostatic protection structure and circuit substrate with same |
-
2016
- 2016-10-13 CN CN201610899715.4A patent/CN106405959B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101825821A (en) * | 2008-12-26 | 2010-09-08 | 乐金显示有限公司 | Mother substrate for liquid crystal display device and method of fabricating the same |
| CN103926719A (en) * | 2014-04-25 | 2014-07-16 | 友达光电股份有限公司 | Display panel with electrostatic protection function |
| CN105320337A (en) * | 2014-07-29 | 2016-02-10 | 南京瀚宇彩欣科技有限责任公司 | Electrostatic protection structure and circuit substrate with same |
| CN104701303A (en) * | 2015-03-30 | 2015-06-10 | 京东方科技集团股份有限公司 | Display device, array substrate and manufacturing method thereof |
| CN105097847A (en) * | 2015-09-15 | 2015-11-25 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN204906858U (en) * | 2015-09-18 | 2015-12-23 | 江西合力泰科技有限公司 | Flexible line way board of display module assembly |
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| CN106405959B (en) | 2019-09-27 |
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