CN106405378B - A kind of radio-frequency switch circuit fault detection method - Google Patents
A kind of radio-frequency switch circuit fault detection method Download PDFInfo
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- CN106405378B CN106405378B CN201610932199.0A CN201610932199A CN106405378B CN 106405378 B CN106405378 B CN 106405378B CN 201610932199 A CN201610932199 A CN 201610932199A CN 106405378 B CN106405378 B CN 106405378B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
- G01R31/2836—Fault-finding or characterising
- G01R31/2837—Characterising or performance testing, e.g. of frequency response
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Monitoring And Testing Of Transmission In General (AREA)
Abstract
The invention discloses a kind of radio-frequency switch circuit fault detection methods, test point is set in radio-frequency switch circuit to detect the bias voltage on PIN diode, using bias voltage as detection voltage, the detection voltage that will test a little is introduced into comparator progress voltage comparison, comparator output result is introduced into MCU again, is compared by MCU with the comparator output voltage of its RF switch normal condition stored;When fault detection when the comparator output voltage difference of comparator output result and RF switch normal condition, then it is assumed that radio-frequency switch circuit is abnormal.This detection method is more direct, more accurately, and is specific to PIN switching circuit and is directly detected, when radio frequency path breaks down, is more advantageous to fault location;And facilitate and report malfunction, the reconstruct for being more advantageous to radio frequency system is realized.
Description
Technical field
The present invention relates to RF switches, and in particular to a method of for detecting radio-frequency switch circuit failure and performance,
Belong to RF switch technical field.
Background technique
For radio frequency system under demand pull and promoting technology, structure moves towards synthesization, modularization from separate type,
And RF switch is then the part for realizing that the synthesization of radio frequency system channel, modularization are indispensable.RF switch is widely used
In satellite communication system, communication and navigation system, microwave test system.
It is then directly related with the quality of radio frequency system reconstruct and correctness to the detection of RF switch access quality.It is big in the past
Mostly be by the output of final radiofrequency signal whether there is or not or watt level switch ways are judged, when this mode detects, need
RF switch is accessed in entire radio frequency system, while needing to be coupled to radiofrequency signal in radio frequency detection path, is increased
The device of redundancy, not only wiring is complicated, and testing cost is also higher.Due to cannot directly be examined to radio-frequency switch circuit
It surveys, even if radio frequency output port abnormal signal, that is, when detecting that failure occurs, fault point can not be accurately positioned, because cannot
The problem of determining the failure or other equipment or wiring that bottom is RF switch, lacks and directly detects to switching circuit.
Summary of the invention
In view of the above shortcomings of the prior art, the object of the present invention is to provide a kind of radio-frequency switch circuit fault detections
Method, this method can directly detect the quality of RF switch, and detection method is more direct, more accurately, more conducively fault location.
To achieve the goals above, The technical solution adopted by the invention is as follows:
A kind of radio-frequency switch circuit fault detection method, it is characterised in that: in radio-frequency switch circuit be arranged test point with
The bias voltage on PIN diode is detected, using bias voltage as voltage is detected, the detection voltage that will test a little, which is introduced into, to be compared
Device carries out voltage comparison, then comparator output result is introduced MCU, by the ratio of the MCU RF switch normal condition stored with it
It is compared compared with device output voltage;When fault detection, the comparator of comparator output result and RF switch normal condition is exported
When voltage difference, then it is assumed that radio-frequency switch circuit is abnormal.
The comparator be four tunnels, respectively comparator A, comparator B, comparator C, comparator D and be located at same comparison
In device chip;Comparator A, comparator B, comparator C, comparator D reference level be respectively set to V0、V1、V2、V3;Wherein V2、
V3The upper limit value and lower limit value of normal detection voltage domain region when corresponding RF switch is opened, V0、V1Corresponding RF switch closes
The upper limit value and lower limit value of normal detection voltage domain region when closing;Assuming that comparison voltage of the detection voltage input to comparator
Value is VI0;
When radio-frequency switch circuit is opened, by VI0Input comparator C, comparator D and V respectively2And V3It is respectively compared, normally
Under state, V3< VI0< V2, the comparison output level of comparator C should be the comparison output electricity of digital low, comparator D at this time
It is flat to should be digital high;When RF switch occurs abnormal, it will lead to detection voltage output exception, eventually lead to comparator C
It is abnormal that digital level is exported compared with comparator D, i.e., the comparison output level of comparator C is digital high or comparator
The comparison output level of D is that digital low is considered as RF switch exception;
When radio-frequency switch circuit shutdown, by VI0Input comparator A, comparator B and V respectively0And V1It is respectively compared, normally
Under state, V1< VI0< V0, the comparison output level of comparator B should be digital high at this time, and the comparison of comparator A exports electricity
It is flat to should be digital low;When RF switch occurs abnormal, it will lead to detection voltage output exception, eventually lead to comparator A
It is abnormal that digital level is exported compared with comparator B, i.e., the comparison output level of comparator A is digital high or comparator
The comparison output level of B is that digital low is considered as RF switch exception.
The detection voltage is just input to comparator chip, V after the resistance R3 of same resistance value and R4 partial pressureI0I.e.
For voltage swing after partial pressure.
The radio-frequency switch circuit includes input unit, output unit and driving voltage, input unit include input port,
Filter inductance L1, PIN diode 1 and biasing resistor R51, filter inductance L1 are grounded by biasing resistor R51;Output unit includes
Filter inductance L2, PIN diode 2, biasing resistor R52 and output port, filter inductance L2 are grounded by biasing resistor R52;PIN
The pole N of diode 1 is connected with the pole N of PIN diode 2;Driving voltage is added to 1 He of PIN diode by biasing resistor R53
The pole N of PIN diode 2;The test point is set between the pole N of PIN diode 1 and the pole N of PIN diode 2;
When radio-frequency switch circuit is in the conductive state, when PIN diode 1 and PIN diode 2 in the conductive state, inspection
Measuring point normal output voltage value is calculated according to driving voltage size and the resistance value of biasing resistor R51, R52, R53;Work as radio frequency
When switching circuit is in an off state, PIN diode 1, PIN diode 2 are not turned on, and test point normal output voltage value is then big
About driving voltage value.
Compared with prior art, the present invention has the advantage that
The radiofrequency signal of abandoning tradition of the present invention exports and introduces additional fault detection signal, directly detection RF switch
Bias voltage it is whether normal, and then to judge whether radio-frequency switch circuit is in normal working condition.Traditional detection side
Method is to judge whether respective radio-frequency access is normal by the signal output of radio frequency output port, and Comparison between detecting methods are complicated, at
This is higher, cannot directly detect to radio-frequency switch circuit.For the present invention compared with traditional method, detection method is more direct,
It is more accurate, and be specific to PIN switching circuit and directly detected, when radio frequency path breaks down, it is more advantageous to failure
Positioning;And facilitate and report malfunction, the reconstruct for being more advantageous to radio frequency system is realized.
Detailed description of the invention
Fig. 1-radio-frequency switch circuit schematic diagram of the present invention.
Fig. 2-multilevel iudge circuit diagram of the present invention.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail.
Detection circuit appropriate is added in common PIN switching circuit in the present invention.Its principle is switched in common PIN
Test point is added in circuit to detect the bias voltage on PIN diode, bias voltage will test inspection a little as detection voltage
It surveys voltage and is introduced into comparator progress voltage comparison, when PIN switching circuit abnormal state, the fault detection voltage of output also will
There is exception, the comparison output result of comparator will also occur abnormal at this time;The output result of comparator is introduced into MCU, with reason
It is compared by upper comparator output voltage, then can determine whether current PIN switching circuit is normal.
PIN switching circuit of the present invention exports test point: Fig. 1 show common switching circuit, including input unit, output
Unit and driving voltage, input unit include input port, filter inductance L1, PIN diode 1 and biasing resistor R51, filtered electrical
Sense L1 is grounded by biasing resistor R51;Output unit includes filter inductance L2, PIN diode 2, biasing resistor R52 and output end
Mouthful, filter inductance L2 is grounded by biasing resistor R52;The pole N of PIN diode 1 is connected with the pole N of PIN diode 2;Driving electricity
Pressure is added to the pole N of PIN diode 1 and PIN diode 2 by biasing resistor R53;The test point is set to PIN diode 1
The pole N and PIN diode 2 the pole N between;Filter inductance L1 realizes that switching circuit carries out exchange with the earth and is isolated with L2, increases
Switch isolation degree.R51, R52, R53 realize current-limiting function.When PIN diode is in the conductive state, driving voltage is negative electricity
Pressure, then there are positive voltages between C as shown in Figure 1 point and A point, between D point and A point, at this point, PIN diode 1, PIN diode
2 is in the conductive state, and the fixed pressure drop on each PIN pipe is about 0.7V, at this time according to the driving voltage value of selection and R51,
The design resistance value of R52, R53, can calculate the voltage value at test point A, which is then the normal of test point under on state
Output voltage values.When PIN switching circuit is in an off state, driving voltage is positive voltage, at this time PIN diode PIN1,
PIN2 is not turned on, and test point output voltage values are then about driving voltage value at this time.
Fig. 2 show the decision circuitry to test point output voltage.Detectable voltage signals pass through the resistance of same resistance value
After R3 and R4 is divided, it is input to comparator chip, four road comparators are contained in each comparator chip, in order to distinguish
Illustrate, it is A, B, C, D that tetra- road comparator of Jiang Gai is numbered respectively.In this example, calculated switching circuit test point output electricity
Pressure, after R3, R4 are divided, then the comparing voltage value for being input to comparator is VI0;In view of detection voltage may have
The problem of error and comparator compare precision the reference level of the road A, B, C, D comparator is respectively set to V0、V1、V2、V3。
Wherein V2、V3Normal detection voltage domain region when control switch is opened, V0、V1Normal detection electricity when control switch is closed
Intermediate pressure section range, according to design as above, when switching circuit state is to open, under normal condition, V3< VI0< V2, compare at this time
The comparison output level of device C should be digital low, the comparison output level of comparator D should be digital high, when switch shape
When state occurs abnormal, then it will lead to switch detection voltage output exception, eventually lead to comparator C and exported compared with comparator D
Digital level is abnormal.When switching circuit shutdown, under normal condition, V1< VI0< V0, the output level of the road B comparator is answered at this time
Output level for digital high, the road A comparator should be digital low, when switch state occurs abnormal, then will lead to
Switch detection voltage output is abnormal, eventually leads to comparator A and exports digital level exception compared with comparator B.
When radio-frequency switch circuit exception, exception, and then voltage V after partial pressure will also occur in detection voltageI0Also there is exception,
Abnormal, i.e. comparator output result when MCU can compare detection failure will also occur in the comparison output result of comparator at this time
It is different from theoretically comparator output voltage, the conclusion for radio-frequency switch circuit exception that you can get it at this time.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (2)
1. a kind of radio-frequency switch circuit fault detection method, it is characterised in that: test point is arranged in radio-frequency switch circuit to examine
Survey the bias voltage on PIN diode, bias voltage as detection voltage, the detection voltage that will test a little be introduced into comparator into
Row voltage compares, then comparator output result is introduced MCU, by the comparator of the MCU RF switch normal condition stored with it
Output voltage is compared;The comparator output voltage of comparator output result and RF switch normal condition when fault detection
When different, then it is assumed that radio-frequency switch circuit is abnormal;
The radio-frequency switch circuit includes input unit, output unit and driving voltage, and input unit includes input port, filtering
Inductance L1, PIN diode 1 and biasing resistor R51, filter inductance L1 are grounded by biasing resistor R51;Output unit includes filtering
Inductance L2, PIN diode 2, biasing resistor R52 and output port, filter inductance L2 are grounded by biasing resistor R52;PIN second level
The pole N of pipe 1 is connected with the pole N of PIN diode 2;Driving voltage is added to PIN diode 1 and PIN bis- by biasing resistor R53
The pole N of grade pipe 2;The test point is set between the pole N of PIN diode 1 and the pole N of PIN diode 2;Filter inductance L1 with
L2 realizes that switching circuit is isolated with the earth exchange, increases switch isolation degree, and biasing resistor R51, R52, R53 realize current-limiting function;
When radio-frequency switch circuit is in the conductive state, when PIN diode 1 and PIN diode 2 in the conductive state, test point
Normal output voltage value is calculated according to driving voltage size and the resistance value of biasing resistor R51, R52, R53;Work as RF switch
When circuit is in an off state, PIN diode 1, PIN diode 2 are not turned on, and test point normal output voltage value is then about
Driving voltage value;
The comparator be four tunnels, respectively comparator A, comparator B, comparator C, comparator D and be located at same comparator core
In piece;Comparator A, comparator B, comparator C, comparator D reference level be respectively set to V0、V1、V2、V3;Wherein V2、V3It is right
The upper limit value and lower limit value of normal detection voltage domain region when RF switch being answered to open, V0、V1When corresponding RF switch is closed
Normal detection voltage domain region upper limit value and lower limit value;Assuming that the comparing voltage value of detection voltage input to comparator is
VI0;
When radio-frequency switch circuit is opened, by VI0Input comparator C, comparator D and V respectively2And V3It is respectively compared, normal condition
Under, V3< VI0< V2, the comparison output level of comparator C should be digital low at this time, the comparison output level of comparator D is answered
For digital high;When RF switch occurs abnormal, it is abnormal to will lead to detection voltage output, eventually lead to comparator C with than
Comparison output digital level compared with device D is abnormal, i.e., the comparison output level of comparator C is digital high or comparator D
Comparing output level is that digital low is considered as RF switch exception;
When radio-frequency switch circuit shutdown, by VI0Input comparator A, comparator B and V respectively0And V1It is respectively compared, normal condition
Under, V1< VI0< V0, the comparison output level of comparator B should be digital high at this time, and the comparison output level of comparator A is answered
For digital low;When RF switch occurs abnormal, it is abnormal to will lead to detection voltage output, eventually lead to comparator A with than
Comparison output digital level compared with device B is abnormal, i.e., the comparison output level of comparator A is digital high or comparator B
Comparing output level is that digital low is considered as RF switch exception.
2. radio-frequency switch circuit fault detection method according to claim 1, it is characterised in that: the detection voltage passes through
After resistance R3 and the R4 partial pressure of same resistance value, it is just input to comparator chip, VI0Voltage swing after as dividing.
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CN106405378B true CN106405378B (en) | 2019-10-08 |
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EP3611522B1 (en) * | 2018-08-14 | 2021-05-05 | NXP USA, Inc. | Embedded test circuitry and method therefor |
CN113945866B (en) * | 2021-12-14 | 2022-05-13 | 北京中铁建电气化设计研究院有限公司 | Testing device and testing method for multiple types of transmission lines |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01161176A (en) * | 1987-12-17 | 1989-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Trouble detecting circuit for microwave diode switching circuit |
CN102608513A (en) * | 2011-01-20 | 2012-07-25 | 上海华虹Nec电子有限公司 | On-chip testing structure for a radio frequency switching chip and testing method |
CN104181461A (en) * | 2014-09-12 | 2014-12-03 | 四川九洲电器集团有限责任公司 | Fault detection assembly and method for microwave switch |
CN204439793U (en) * | 2014-12-05 | 2015-07-01 | 神讯电脑(昆山)有限公司 | Radio-frequency (RF) switch proving installation |
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2016
- 2016-10-25 CN CN201610932199.0A patent/CN106405378B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01161176A (en) * | 1987-12-17 | 1989-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Trouble detecting circuit for microwave diode switching circuit |
CN102608513A (en) * | 2011-01-20 | 2012-07-25 | 上海华虹Nec电子有限公司 | On-chip testing structure for a radio frequency switching chip and testing method |
CN104181461A (en) * | 2014-09-12 | 2014-12-03 | 四川九洲电器集团有限责任公司 | Fault detection assembly and method for microwave switch |
CN204439793U (en) * | 2014-12-05 | 2015-07-01 | 神讯电脑(昆山)有限公司 | Radio-frequency (RF) switch proving installation |
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