CN106384565A - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereof Download PDFInfo
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- CN106384565A CN106384565A CN201610817862.2A CN201610817862A CN106384565A CN 106384565 A CN106384565 A CN 106384565A CN 201610817862 A CN201610817862 A CN 201610817862A CN 106384565 A CN106384565 A CN 106384565A
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- conducting layer
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
- G02F2001/1635—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor the pixel comprises active switching elements, e.g. TFT
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses a display device, which comprises a substrate, a pixel limiting layer, a transparent conducting layer, an electrochromic layer and a cathode, wherein the pixel limiting layer is arranged on the substrate; multiple pixel areas and multiple non-pixel areas are limited by the pixel limiting layer; the transparent conducting layer is arranged on the pixel limiting layer, and is located in the non-pixel areas; the electrochromic layer is arranged on the transparent conducting layer and is located in the non-pixel areas; the cathode covers the electrochromic layer. The invention also discloses an electronic device comprising the display device and a manufacturing method of the display device. In the display device provided by the invention, through controlling the voltages of the transparent conducting layer and the cathode, the color or the transparence of the electrochromic layer is changed; thus, the display device is enabled to present different transparency or colors; moreover, the structure of the display device is simple; the realization of the lightening and the thinning of the display device is facilitated.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of display device and preparation method thereof.
Background technology
Transparent display, refers to form Transparence Display state so that beholder can be seen that the display dress of its rear scene
Put, more typically can be applicable to such as show window etc. need to be used with assuming display picture before showing physical item.Transparence Display is
The development trend of Display Technique of future generation, it is widely used, and can be used in mobile phone, notebook, display, show window etc..
But, due to the penetrance of transparent display itself, the scene after device can be clearly illustrated, privacy
Bad it is often desired to transparent display can independently be controlled the need of transparent.Although having been developed for now one kind can
With Autonomous Control transparent display the need of transparent display device, this display device is by selecting liquid crystal cell real
Existing, but because liquid crystal cell cost of manufacture is too high and box is thicker than thickness, have such problems as that liquid crystal response speed is slow and maximizes, system again
No matter from price, properties of product, the aesthetics of outward appearance all can not meet client's needs to the product made.
Content of the invention
For solving above-mentioned technical problem, the present invention provides a kind of display device, including：
Substrate；
Pixel confining layers, on the substrate, wherein, described pixel defining layer limits multiple pixel regions and many for setting
Individual non-pixel region；
Transparency conducting layer, is arranged in described pixel confining layers, and is located at described non-pixel region；
Electrochromic layer, is arranged on described transparency conducting layer, and is located at described non-pixel region；And
Negative electrode, covers described electrochromic layer.
Further, in described display device, described transparency conducting layer is electrically drawn by a wire, described wire position
In described non-pixel region.
Further, in described display device, described transparency conducting layer is identical with the material of described wire, and described
Bright conductive layer and described wire are located at same layer.
Further, in described display device, described display device also includes multiple pixels, and each described pixel is located at
On substrate in one described pixel region, described negative electrode also covers described pixel.
Further, in described display device, described display device also includes multiple anodes, a hole transmission layer and
Electron transfer layer, described anode is formed on described substrate, and each described pixel is arranged on the top of a described anode；Described
Hole transmission layer be arranged on the anode of described pixel region and described electrochromic layer on, and be located at described pixel under；Described
Electron transfer layer is arranged in described pixel and the hole transmission layer of described non-pixel region, and is located under described negative electrode.
Further, in described display device, the material of described electrochromic layer is Tungstic anhydride., described electrically conducting transparent
The material of layer is Graphene.
According to the another side of the present invention, also provide a kind of manufacture method of display device, including；
Form pixel confining layers on a substrate, described pixel defining layer limits multiple pixel regions and non-multiple pixel
Region；
One transparency conducting layer and an electrochromic layer sequentially formed on described pixel confining layers, described transparency conducting layer and
Electrochromic layer is located at described non-pixel region；And
One negative electrode is formed on described electrochromic layer.
Further, in the manufacture method of described display device, described manufacture method also includes：In described non-pixel areas
Form a wire, described transparency conducting layer is electrically drawn by described wire in domain.
Further, in the manufacture method of described display device, the material phase of described transparency conducting layer and described wire
With, and described transparency conducting layer and described wire are located at same layer, described transparency conducting layer and described wire are formed simultaneously.
Further, in the manufacture method of described display device, described manufacture method also includes：In each described pixel
One pixel is formed on the substrate in region, described negative electrode also covers described pixel；Form multiple anodes on the substrate, often
Pixel described in one is arranged on the top of a described anode.Form a hole transmission layer and an electron transfer layer, described hole passes
Defeated layer be arranged on the anode of described pixel region and described electrochromic layer on, and be located at described pixel under；Described electronics passes
Defeated layer is arranged in described pixel and the hole transmission layer of described non-pixel region, and is located under described negative electrode.
There is provided in a kind of display device in the present invention, described display device includes substrate, pixel confining layers, electrically conducting transparent
Layer, electrochromic layer and negative electrode, described pixel confining layers arrange on the substrate, and wherein, described pixel defining layer limits
Go out multiple pixel regions and multiple non-pixel region, described transparency conducting layer is arranged in described pixel confining layers, described electroluminescent
Photochromic layer is arranged on described transparency conducting layer, and described negative electrode covers described electrochromic layer.By controlling described electrically conducting transparent
The voltage of layer and negative electrode is so that the color of described electrochromic layer or transparency change, so that described display device
Present different transparencys or color；And, the structure of this display device is simple, is advantageously implemented the light of described display device
Thinning.
Further, provide in a kind of display device in the present invention, described transparency conducting layer is electrically drawn by a wire,
Described wire is located in described non-pixel region, to avoid affecting the normal display of described display device.
Further, provide in a kind of display device in the present invention, described display device also includes multiple pixels, each institute
State pixel to be located on the substrate in a described pixel region, described negative electrode also covers described pixel, described pixel and described electricity
Mutagens chromatograph shares described negative electrode, when described negative electrode is powered it is only necessary to control the voltage of described transparency conducting layer, just can change
The color of described electrochromic layer or transparency, can further reduce the complexity of described display device, thus further
Improve the light and thin degree of described display device.
Brief description
Fig. 1 is the generalized section of the display device of one embodiment of the invention；
Fig. 2 is the top view of the display device of one embodiment of the invention, and Fig. 1 is the profile along AA ' line for the Fig. 2；
Fig. 3 is the flow chart of the manufacture method of display device of one embodiment of the invention；
Fig. 4-Figure 10 is the structural representation in preparation process for the manufacture method of the display device of one embodiment of the invention.
Specific embodiment
Below in conjunction with schematic diagram, the display device of the present invention is described in more detail, which show the present invention's
Preferred embodiment is it should be appreciated that those skilled in the art can change invention described herein, and still realizes the present invention's
Advantageous effects.Therefore, description below be appreciated that widely known for those skilled in the art, and be not intended as to this
The restriction of invention.
Referring to the drawings the present invention more particularly described below by way of example in the following passage.According to following explanation, the present invention
Advantages and features will become apparent from.It should be noted that, accompanying drawing all in the form of very simplification and all using non-accurately ratio,
Only in order to purpose that is convenient, lucidly aiding in illustrating the embodiment of the present invention.
The core concept of the present invention is, the present invention provides a kind of display device, and described display device includes：
Substrate；Pixel confining layers, on the substrate, wherein, described pixel defining layer limits multiple pixel regions for setting
Domain and multiple non-pixel region；Transparency conducting layer, is arranged in described pixel confining layers；Electrochromic layer, is arranged on described
On bright conductive layer；And negative electrode, cover described electrochromic layer.
By the voltage by controlling described transparency conducting layer and negative electrode so that the color of described electrochromic layer or transparency
Change, so that described display device presents different transparencys or color；And, the structure letter of this display device
Single, it is advantageously implemented the lightening of described display device.
With reference to Fig. 1, described display device 1 includes substrate 100, pixel confining layers 120, transparency conducting layer 130, electrochromism
Layer 140 and negative electrode 170.In the present embodiment, described substrate 100 is array base palte, described substrate 100 is provided with thin film brilliant
Body periosteum layer 101, wherein, described thin film transistor (TFT) film layer 101 is used for the thin film transistor (TFT) that setting has switching function, described thin
Planarization layer 102 is provided with film transistor film layer 101.Described pixel confining layers 120 are arranged on described planarization layer 102,
Wherein, described pixel defining layer 120 has multiple openings, thus limiting multiple pixel regions 11 and multiple non-pixel region
12, wherein, at described opening, limit described pixel region 11.
Described transparency conducting layer 130 and described electrochromic layer 140 are successively set in described pixel confining layers 120, and
Described transparency conducting layer 130 and described electrochromic layer 140 are respectively positioned on described non-pixel region 12.Described transparency conducting layer 130
Material be Graphene or ITO etc., the material of described electrochromic layer 140 presents different colors under different voltage
Or transparency, for example in the present embodiment, the material of described electrochromic layer 140 is Tungstic anhydride. etc..
In the present embodiment, as shown in Fig. 2 described transparency conducting layer 130 is electrically drawn by a wire 131, described lead
Line 131 is located in described non-pixel region 12, to avoid affecting the normal display of described display device 1.Described wire 131 is to institute
Stating transparency conducting layer 130 provides voltage, thus providing anode voltage to described electrochromic layer 140.Transparent lead preferably, described
Electric layer 130 is identical with the material of described wire 131, and described transparency conducting layer 130 and described wire 131 are located at same layer, can
To reduce the structure complexity of described display device 1, reduce the thickness of described display device 1 simultaneously.
As shown in figure 1, described display device 1 also includes multiple pixels 150, each described pixel 150 is positioned at described in one
In pixel region 11.Described display device 1 also includes multiple anodes 110, and described anode 110 is formed on described substrate 100, tool
In the present embodiment, described anode 110 is formed on described planarization layer 102 body, and with described thin film transistor (TFT) film layer 101 in
Thin film transistor (TFT) to conducting.Each described pixel 150 is arranged on the top of a described anode 110, and described anode 110 is to institute
Stating pixel 150 provides anode voltage.
Preferably, described display device 1 also includes a hole transmission layer 161 and an electron transfer layer 162, to improve electronics
Migration with hole.Described hole transmission layer 161 is arranged on the anode 110 of described pixel region 11 and described electrochromic layer
On 140, and it is located under described pixel 150；Described electron transfer layer 162 is arranged on described pixel 150 and described non-pixel region
On 12 hole transmission layer 161.
Described negative electrode 170 covers described electrochromic layer 140 and described pixel 150, with to described electrochromic layer 140 He
Described pixel 150 provides cathode voltage.Due to being additionally provided with described hole transmission layer 161 and electron transfer layer in the present embodiment
162, so, described negative electrode 170 covers described hole transmission layer 161 and electron transfer layer 162.
In the present embodiment, described pixel 150 and described electrochromic layer 140 share described negative electrode 170, described anode
110 provide anode voltage to described pixel 150, and described wire 131 passes through described transparency conducting layer 130 to described electrochromic layer
140 offer anode voltages.When described negative electrode 170 is powered it is only necessary to control the voltage of described transparency conducting layer 130, just can change
Become color or the transparency of described electrochromic layer 140.
Described electrochromic layer 140 is for example needed to show different transparencys in the state of difference in the present embodiment,
Then described negative electrode 170 is powered, and in Transparence Display, described wire 131 does not provide voltage, then institute to described transparency conducting layer 130
Stating electrochromic layer 140 is transparence, so that described display device 1 is transparence；In nontransparent display, described wire
131 provide a certain size voltage so that the color of described electrochromic layer 140 and transparency add to described transparency conducting layer 130
Deep, thus changing the transparency of described display device 1.
Described display device 1 in the present embodiment can be used for electronic installation, such as mobile phone, panel computer, display show window
Etc., by adjusting color and the transparency of described display device 1, change color and the transparency of described electronic installation.
The manufacture method illustrating described display device 1 below with reference to Fig. 3-Figure 10.
First, carry out step S11, as shown in figure 4, pixel confining layers 120 are formed on described substrate 100.Specifically, carry
For described substrate 100；Thin film transistor (TFT) film layer 101 is first formed on described substrate 100；Afterwards in shown thin film transistor (TFT) film layer
101 formation planarization layers 102；And form via 103 in described planarization layer 102；Then sputter described anode 110, and scheme
Anode 110 described in shape, described anode 110 fills described via 103, turns on described thin film transistor (TFT) film layer 101；Re-form
Described pixel confining layers 120, and graphically described pixel confining layers 120, form opening 121 in described pixel confining layers 120,
Thus limiting multiple pixel regions 11 and multiple non-pixel region 12, wherein, limit described pixel region at described opening 121
Domain 11.
Then, carry out step S12, a transparency conducting layer 130 and is sequentially formed on described pixel confining layers 120 electroluminescent
Photochromic layer 140.Specifically, it is initially formed described nesa coating, described nesa coating covers described anode 110 and pixel limits
Layer 120；Then graphical described nesa coating, forms as shown in Figure 5, described transparency conducting layer 130 and as shown in Figure 2
Wire 131；Then form described electrochromic layer 140, as shown in fig. 6, described electrochromic layer 140 is located at described transparent lead
In electric layer 130, described transparency conducting layer 130 and electrochromic layer 140 are respectively positioned on described non-pixel region 12.
Afterwards, as shown in fig. 7, forming described hole transmission layer 161, described hole transmission layer 161 covers described electroluminescent change
Chromatograph 140 and the described anode 110 exposing.
Then, as shown in figure 8, forming a pixel 150, in the present embodiment, institute in each described pixel region 11
State pixel 150 to be located on described hole transmission layer 161.
Then, as shown in figure 9, forming described electron transfer layer 162, described electron transfer layer 162 covers described pixel 150
With the described hole transmission layer 161 coming out.
Finally, as shown in Figure 10, form described negative electrode 170, in the present embodiment, described negative electrode 170 covers described hole
Transport layer 161.
Presently preferred embodiments of the present invention as described above, still, display device of the present invention and preparation method thereof, electronic equipment
It is not limited to content disclosed above, for example, the manufacture method of described display device is not limited to using above-mentioned manufacture method, this
The technical staff in field can be made using other methods according to described display device；Additionally, described wire and described
Transparency conducting layer is also not necessarily limited to same layer, is formed simultaneously, a film layer can also be manufactured separately and be used for forming described wire, can also
Realize the electrical extraction of described transparency conducting layer, according to the foregoing description of the present invention, this can manage for those skilled in the art
Solution, therefore not to repeat here.
In sum, the present invention provides a kind of display device and preparation method thereof, electronic equipment, described display device bag
Include：There is provided in a kind of display device in the present invention, described display device includes substrate, pixel confining layers, transparency conducting layer, electroluminescent
Photochromic layer and negative electrode, described pixel confining layers are arranged on the substrate, and wherein, described pixel defining layer limits multiple pictures
Plain region and multiple non-pixel region, described transparency conducting layer is arranged in described pixel confining layers, and described electrochromic layer sets
Put on described transparency conducting layer, described negative electrode covers described electrochromic layer.
Wherein it is possible to by controlling the voltage of described transparency conducting layer and negative electrode so that the color of described electrochromic layer
Or transparency changes, so that described display device presents different transparencys or color；And, this display device
Structure simple, be advantageously implemented the lightening of described display device.
Obviously, those skilled in the art can carry out the various changes and modification essence without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprise these changes and modification.
Claims (10)
1. a kind of display device is it is characterised in that include：
Substrate；
Pixel confining layers, on the substrate, wherein, described pixel defining layer limits multiple pixel regions and multiple non-for setting
Pixel region；
Transparency conducting layer, is arranged in described pixel confining layers, and is located at described non-pixel region；
Electrochromic layer, is arranged on described transparency conducting layer, and is located at described non-pixel region；And
Negative electrode, covers described electrochromic layer.
2. display device as claimed in claim 1 is it is characterised in that described transparency conducting layer is electrically drawn by a wire,
Described wire is located in described non-pixel region.
3. display device as claimed in claim 2 is it is characterised in that the material phase of described transparency conducting layer and described wire
With, and described transparency conducting layer and described wire are located at same layer.
4. the display device as described in any one in claim 1-3 it is characterised in that described display device also include multiple
Pixel, each described pixel is located on the substrate in a described pixel region, and described negative electrode also covers described pixel.
5. display device as claimed in claim 4 is it is characterised in that described display device also includes multiple anodes, a hole
Transport layer and an electron transfer layer, described anode is formed on described substrate, and each described pixel is arranged on a described anode
Top；Described hole transmission layer be arranged on the anode of described pixel region and described electrochromic layer on, and be located at described
Under pixel；Described electron transfer layer is arranged in described pixel and the hole transmission layer of described non-pixel region, and is located at described
Under negative electrode.
6. display device as claimed in claim 1 it is characterised in that described electrochromic layer material be Tungstic anhydride., institute
The material stating transparency conducting layer is Graphene.
7. a kind of manufacture method of display device is it is characterised in that include：
Form pixel confining layers on a substrate, described pixel defining layer limits multiple pixel regions and non-multiple pixel region
Domain；
One transparency conducting layer and an electrochromic layer sequentially formed on described pixel confining layers, described transparency conducting layer and electroluminescent
Photochromic layer is located at described non-pixel region；
One negative electrode is formed on described electrochromic layer.
8. the manufacture method of display device as claimed in claim 7 is it is characterised in that described manufacture method also includes：Institute
State and in non-pixel region, form a wire, described transparency conducting layer is electrically drawn by described wire.
9. the manufacture method of display device as claimed in claim 8 is it is characterised in that described transparency conducting layer and described wire
Material identical, and described transparency conducting layer and described wire are located at same layer, and described transparency conducting layer and described wire are simultaneously
Formed.
10. the manufacture method of the display device as described in any one in claim 7-9 is it is characterised in that described making side
Method also includes：
One pixel is formed on the substrate in each described pixel region, described negative electrode also covers described pixel；
Form multiple anodes on the substrate, each described pixel is arranged on the top of a described anode；
Form a hole transmission layer and an electron transfer layer, described hole transmission layer be arranged on the anode of described pixel region and
On described electrochromic layer, and it is located under described pixel；Described electron transfer layer is arranged on described pixel and described non-pixel areas
On the hole transmission layer in domain, and it is located under described negative electrode.
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| CN107706212A (en) * | 2017-09-06 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | The preparation method and display panel of a kind of display panel |
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| CN108365123A (en) * | 2017-09-30 | 2018-08-03 | 云谷（固安）科技有限公司 | Display screen and electronic equipment |
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| US11217643B2 (en) | 2017-09-30 | 2022-01-04 | Yungu (Gu'an) Technology Co., Ltd. | Display screens and electronic devices having electrovariable light transmittance material |
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