CN106375058A - 光模块 - Google Patents

光模块 Download PDF

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Publication number
CN106375058A
CN106375058A CN201610813775.XA CN201610813775A CN106375058A CN 106375058 A CN106375058 A CN 106375058A CN 201610813775 A CN201610813775 A CN 201610813775A CN 106375058 A CN106375058 A CN 106375058A
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signal
circuit
photoelectric conversion
conversion unit
optical module
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张强
赵其圣
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Hisense Broadband Multimedia Technology Co Ltd
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Hisense Broadband Multimedia Technology Co Ltd
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Priority to CN201610813775.XA priority Critical patent/CN106375058A/zh
Priority to US15/394,659 priority patent/US10254162B2/en
Publication of CN106375058A publication Critical patent/CN106375058A/zh
Priority to US16/356,962 priority patent/US10571639B2/en
Priority to US16/793,838 priority patent/US11054594B2/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4292Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • G02B6/4293Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements hybrid electrical and optical connections for transmitting electrical and optical signals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04JMULTIPLEX COMMUNICATION
    • H04J14/00Optical multiplex systems
    • H04J14/02Wavelength-division multiplex systems
    • H04J14/0298Wavelength-division multiplex systems with sub-carrier multiplexing [SCM]
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/165Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the semiconductor sensitive to radiation being characterised by at least one potential-jump or surface barrier
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4406Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911Photodiode bias control, e.g. for compensating temperature variations
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B2210/00Indexing scheme relating to optical transmission systems
    • H04B2210/07Monitoring an optical transmission system using a supervisory signal
    • H04B2210/074Monitoring an optical transmission system using a supervisory signal using a superposed, over-modulated signal

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Abstract

本发明提供一种光模块,包括:光电转换单元、第一解调电路以及第二解调电路;所述第一解调电路以及所述第二解调电路分别与所述光电转换单元连接;所述光电转换单元用于将接收到的光信号转换为电信号;所述第一解调电路用于从所述光电转换单元所转换的电信号中解调出高频电信号;所述第二解调电路用于从所述光电转换单元所转换的电信号中解调出低频电信号。本发明所提供的光模块,当光电转换单元将所接收到的光信号转换为电信号后,第一解调电路和第二解调电路会分别从该电信号中解调出高频电信号以及低频电信号,并输出给后级的设备使用。从而使得光模块既可以承载高频信号,也可以承载低频信号。

Description

光模块
技术领域
本发明涉及电子技术,尤其涉及一种光模块。
背景技术
随着光纤通信技术的发展,在一些光纤通信领域中,要求在原本的高速业务通道上加载低频信号。例如,国际标准化组织FSAN提出在点对点密集波分复用无源光网络中增加辅助管理与控制信道(Auxiliary Management and Control Channel,简称AMCC),AMCC的传输速率一般在在100Kbit/s以下,即属于低频信号。因此,这就要求PTP WDM PON网络既能承载原有的高速业务信号,也能承载AMCC这样的低频信号。
PTP WDM PON网络中光信号的接收和发送都由光模块完成,但是,现有技术中,光模块仅能接收和发送高频的数字业务信号,而无法接收和发送低频信号。
因此,现有技术中的光模块无法满足同时承载高频信号和低频信号的要求。
发明内容
本发明提供一种光模块,包括:光电转换单元、第一解调电路以及第二解调电路;
所述第一解调电路以及所述第二解调电路分别与所述光电转换单元连接;
所述光电转换单元用于将接收到的光信号转换为电信号;
所述第一解调电路用于从所述光电转换单元所转换的电信号中解调出高频电信号;
所述第二解调电路用于从所述光电转换单元所转换的电信号中解调出低频电信号。
本发明所提供的光模块中包括了光电转换单元、第一解调电路以及第二解调电路,当光电转换单元将所接收到的光信号转换为电信号后,第一解调电路和第二解调电路会分别从该电信号中解调出高频电信号以及低频电信号,并输出给后级的设备使用。从而使得光模块既可以承载高频信号,也可以承载低频信号,满足实际应用中同时承载高频信号和低频信号的要求。
另外,本发明所提供的光模块中的第一解调电路和第二解调电路相互独立,即在原有的解调高频信号的电路的基础上,新增了一路解调低频信号的电路,因此能够保证原有的高频信号解调不受影响,可保证光模块的灵敏度。
附图说明
为了更清楚地说明本发明或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为光模块进行光通信的交互示意图;
图2为本发明提供的光模块实施例一的模块结构图;
图3为本发明提供的光模块实施例二的模块示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
光模块是一种光电相互转换的器件,使用光模块实现的光通信是一种交互通信。图1为光模块进行光通信的交互示意图。如图1所示,在光发射端,光模块与交换机等系统端1相连,接收来自系统端1的电信号,将电信号转化为光信号输出,光信号往往输入光纤等光波导,以实现信息发射。在光接收端,光模块与交换机等系统端2相接,接收来自发射端的光信号,将光信号转换为电信号并输出至系统端2。其中,系统端1及系统端2可以包括交换机、光网络端元机顶盒、光线路终端机顶盒等。
本发明主要涉及光接收端的光模块,即光模块在接收光信号并进行转换、解调时所涉及的结构。
图2为本发明提供的光模块实施例一的模块结构图,如图2所示,该光模块包括:光电转换单元1、第一解调电路2以及第二解调电路3。
第一解调电路2以及第二解调电路3分别与光电转换单元1连接。
其中,光电转换单元1用于将接收到的光信号转换为电信号。
光电转换单元1会接收从光线路终端Optical Line Ternimal-,简称OLT)发送过来的光信号,OLT所发送的光信号可能是由高频信号和低频信号共同构成的副载波调制光信号,光模块会从中解调分离出高频电信号和低频电信号。
具体地,光模块通过光电转换单元1接收OLT发送的光信号,光电转换单元1接收到光信号之后,会将其转换为电信号。该电信号为电流信号。具体地,光电转换单元1利用光电效应,将光功率变化的光转变为电流值变化的电流信号,并由后续的电路进行解调。
第一解调电路2用于从光电转换单元1所转换的电信号中解调出高频电信号。
第二解调电路3用于从光电转换单元1所转换的电信号中解调出低频电信号。
具体地,第一解调电路2和第二解调电路3为相互独立的两个电路,并分别与光电转换单元1连接。第一解调电路2通过内部的器件解调出高频电信号,该高频电信号具体为高频数字信号;第二解调电路3通过内部的器件解调出低频电信号,该低频电信号例如可以是AMCC信号。但是,需要说明的是,本发明并不限制所解调出的低频电信号的类型,只要是区别于高频数字信号的低频电信号,都可以通过本发明所提供的光模块进行解调后输出。
可选地,上述光电转换单元1具体可以为雪崩光电二极管(Avalanche PhotoDiode,简称APD)或者PIN光电二极管。
本实施例中,光模块中包括了光电转换单元、第一解调电路以及第二解调电路,当光电转换单元将所接收到的光信号转换为电信号后,第一解调电路和第二解调电路会分别从该电信号中解调出高频电信号以及低频电信号,并输出给后级的设备使用。从而使得光模块既可以承载高频信号,也可以承载低频信号,满足实际应用中同时承载高频信号和低频信号的要求。
另外,本实施例中,第一解调电路和第二解调电路相互独立,即在原有的解调高频信号的电路的基础上,新增了一路解调低频信号的电路,因此能够保证原有的高频信号解调不受影响,可以保证光模块的灵敏度。
图3为本发明提供的光模块实施例二的模块示意图,如图3所示,第一解调电路2包括跨阻放大器(Trans-Impedance Amplifier,简称TIA)21、限幅放大器(LimitingAmplifier,简称LIA)22、第一电容23以及第二电容24。
其中,跨阻放大器21与光电转换单元1连接。
具体地,跨阻放大器21可以将光电转换单元所输出的电流信号转换为电压信号,同时,跨阻放大器21还能够将所转换的电压信号进行初步放大。
限幅放大器22通过第一电容23以及第二电容24与跨阻放大器21连接。
具体地,跨阻放大器21输出的为两路差分信号,第一电容23和第二电容24的一端分别连接在跨阻放大器21的两路差分信号输出端,而第一电容23和第二电容24的另一端则都连接至限幅放大器22的输入端。
跨阻放大器21用于将光电转换单元1输出的电流信号转换为电压信号并输出。
限幅放大器22用于结合第一电容23以及第二电容24,对跨阻放大器21所输出的电压信号进行高通滤波。
具体地,第一电容23、第二电容24以及限幅放大器22内部集成的上拉电阻构成一个高通滤波器,当电压信号经过第一电容23、第二电容24以及限幅放大器22时,其中的低频信号被滤掉,从而实现高通滤波。
限幅放大器22还用于对高通滤波后的电压信号进行限幅放大并输出。
在光模块工作过程中,当跨阻放大器接收到光电转换单元输出的电流信号之后,将该电流信号转换为电压信号,同时对该电压信号进行初步放大。进而,当电压信号经过第一电容、第二电容以及限幅放大器时,其中的低频信号被滤掉,从而实现高通滤波。进而,限幅放大器根据高通滤波之后的电压信号对其进行信号放大,限幅放大器进而将所放大后的信号输出到后级设备,即图1所述的系统端以供其使用。
在上述实施例的基础上,本实施例涉及第二解调电路的具体结构。即,继续参考图3,第二解调电路3包括电流镜像电路31以及采样保持电路32。
其中,电流镜像电路31与光电转换单元1连接。
采样保持电路32与电流镜像电路31的第一输出端连接。
电流镜像电路31用于接收光电转换单元1的响应电流信号,对该响应电流信号进行低通滤波,并向采样保持电路32输出响应电流信号的镜像电流信号。
采样保持电路32用于将接收到的镜像电流信号转换为电压信号。
本实施例中,电流镜像电路与光电转换单元连接,当光电转换单元完成光电转换,产生电流信号之后,电流镜像电路可以接收到光电转换单元的响应电流信号,电流镜像电路能够对该响应电流信号进行低通滤波,以使得响应电流信号中的高频信号被滤掉,进而,电流镜像电路输出低通滤波后的电流信号的镜像电流信号,该镜像电流信号再经过采样保持电路转换为电压之后输出到后级设备以供使用。经过电流镜像电路与光电转换单元的处理之后,所输出的信号就是低频信号,从而实现了在光模块中承载低频信号。
进一步地,继续参照图3,第二解调电路3中还包括:高压驱动电路33。
其中,高压驱动电路33与电流镜像电路连接。
高压驱动电路33用于向光电转换单元1提供反向高压,以使光电转换单元1产生响应电流信号。
近一步地,继续参照图3,第二解调电路3中还包括:接收信号强度指示(ReceivedSignal Strength Indication,简称RSSI)采样电路34以及微处理单元(MicrocontrollerUnit,简称MCU)35。
其中,RSSI采样电路34的一端与电流镜像电路31的第二输出端连接,RSSI采样电路34的另一端与MCU35连接。
RSSI采样电路34用于监控电流镜像电路31所输出的镜像电流信号,并将监控结果发送给MCU35。
具体地,当电流镜像电路31产生低通滤波后的镜像电流信号之后,该镜像电流信号会分别从电流镜像电路31的第一输出端和第二输出端输出,其中,第一输出端所输出的镜像电流信号会输入前述的采样保持电路,而在本实施例中,第二输出端所输出的镜像电流信号会输入RSSI采样电路34,RSSI采样电路34能够通过监控该镜像电流信号来实现监控光模块的所接收到的光信号的光功率,RSSI采样电路34将监控结果上报给MCU35,由MCU进行后续的分析处理。
需要说明的是,本实施例中,电流镜像电路中的输出端包括了第一输出端和第二输出端,即在电流镜像电路中设置了两个输出端,这样的设置是为了尽可能地减少反向高压的噪声。具体地,如前所述,高压驱动电路33能够向光电转换单元1提供反向高压,高压驱动电路33与电流镜像电路31连接,在向光电转换单元1提供反向高压的过程中,会相应地产生噪声,而在电流镜像电路中设置了两个输出端之后,就能够减少反向高压的所产生的噪声,从而提高光模块中信号的有效性。
基于前述的实施例,在一种优选的实施方式中,参照图3,上述电流镜像电路31具体可以为一镜像电流源。
其中,该镜像电流源的第一输入端与高压驱动电路33连接,该镜像电流源的第一输出端与采样保持电路32连接,该镜像电流源的第二输出端与RSSI采样电路34连接,该镜像电流源的第三输出端与光电转换单元1连接。
其中,该镜像电流源的第一输出端和第二输出端所输出的是该镜像电流源所接收到的光电转换单元的响应电流信号的镜像信号,该镜像电流源的第三输出端所输出的是由高压驱动电路所产生的高压信号,该高压信号被输入到光电转换单元后,使得光电转换单元工作并产生响应电流信号。
在工作过程中,该镜像电流源接收高压驱动电路33的反向高压并输出给光电转换单元1,进而,接收光电转换单元的响应电流信号。该镜像电流源为一低频器件,因此,该镜像电流源仅能处理响应电流信号中的低频信号,即,仅通过该镜像电流本身的特性就实现了低通滤波,而无需再在第二解调电路中增加额外的低通滤波器件。当该镜像电流源接收到响应电流信号之后,从其第一输出端和第二输出端就会输出低频的镜像电流信号,进而由后续的器件再分别对输出的两路镜像电流信号进行后续处理。
在一种可选的实施例中,继续参照图3,第二解调电路3中还包括一运算放大器36。
其中,运算放大器36与采样保持电路32连接。
运算放大器36用于对采样保持电路32所输出的电压信号进行放大。
如前所述,镜像电流源会输出低频的镜像电流信号,再由采样保持电路将低频的镜像电流信号转换为电压信号,这个电压信号的电压值一般都较小,如果后级设备直接使用该电压信号,会影响后级设备对对于该电压信号的分辨率,因此,本实施例中,在采样保持电路之后连接一个运算放大器,来对采样保持电路所输出的电压信号进行放大,经放大之后的电压信号再输出到后级设备中,从而保证后级设备的能够处理这些电压信号。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (9)

1.一种光模块,其特征在于,包括:光电转换单元、第一解调电路以及第二解调电路;
所述第一解调电路以及所述第二解调电路分别与所述光电转换单元连接;
所述光电转换单元用于将接收到的光信号转换为电信号;
所述第一解调电路用于从所述光电转换单元所转换的电信号中解调出高频电信号;
所述第二解调电路用于从所述光电转换单元所转换的电信号中解调出低频电信号。
2.根据权利要求1所述的光模块,其特征在于,所述第一解调电路包括跨阻放大器、限幅放大器、第一电容以及第二电容;
所述跨阻放大器与所述光电转换单元连接;
所述限幅放大器通过所述第一电容以及所述第二电容与所述跨阻放大器连接;
所述跨阻放大器用于将所述光电转换单元输出的电流信号转换为电压信号并输出;
所述限幅放大器用于结合所述第一电容以及所述第二电容对所述跨阻放大器所输出的电压信号进行高通滤波。
3.根据权利要求1所述的光模块,其特征在于,所述第二解调电路包括电流镜像电路、采样保持电路;
所述电流镜像电路与所述光电转换单元连接;
所述采样保持电路与所述电流镜像电路的第一输出端连接;
所述电流镜像电路用于接收所述光电转换单元的响应电流信号,对所述响应电流信号进行低通滤波,并向所述采样保持电路输出所述响应电流信号的镜像电流信号;
所述采样保持电路用于将接收到的所述镜像电流信号转换为电压信号。
4.根据权利要求3所述的光模块,其特征在于,所述第二解调电路还包括:高压驱动电路;
所述高压驱动电路与所述电流镜像电路连接;
所述高压驱动电路用于向所述光电转换单元提供反向高压,以使所述光电转换单元产生响应电流信号。
5.根据权利要求4所述的光模块,其特征在于,所述第二解调电路还包括:接收信号强度指示RSSI采样电路以及微处理单元MCU;
所述RSSI采样电路的一端与所述电流镜像电路连接,所述RSSI采样电路的另一端与所述MCU连接;
所述RSSI采样电路用于监控所述电流镜像电路所输出的镜像电流信号,并将监控结果发送给所述MCU。
6.根据权利要求5所述的光模块,其特征在于,所述电流镜像电路包括镜像电流源;
所述镜像电流源的第一输入端与所述高压驱动电路连接;
所述镜像电流源的第一输出端与所述采样保持电路连接;
所述镜像电流源的第二输出端与所述RSSI采样电路连接;
所述镜像电流源的第三输出端与所述光电转换单元连接。
7.根据权利要求3-6任一项所述的光模块,其特征在于,所述第二解调电路还包括:运算放大器;
所述运算放大器与所述采样保持电路连接;
所述运算放大器用于对所述采样保持电路所输出的电压信号进行放大。
8.根据权利要求1所述的光模块,其特征在于,所述光电转换单元为雪崩光电二极管APD或PIN光电二极管。
9.根据权利要求1所述的光模块,其特征在于,所述低频电信号为辅助管理与控制信道AMCC信号。
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