CN106367735B - Chemical vapor deposition unit and its deposition method - Google Patents
Chemical vapor deposition unit and its deposition method Download PDFInfo
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- CN106367735B CN106367735B CN201611029745.6A CN201611029745A CN106367735B CN 106367735 B CN106367735 B CN 106367735B CN 201611029745 A CN201611029745 A CN 201611029745A CN 106367735 B CN106367735 B CN 106367735B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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Abstract
The present invention discloses a kind of chemical vapor deposition unit, is related to technical field of film preparation.The device includes reaction chamber, the process gas inlets being connected with reaction chamber and byproduct outlet port, and platform is equipped in reaction chamber, flat surface is fixed on platform, to bearing substrate；Have in reaction chamber and plasma-based is formed by by process gas, be equipped with an at least electric field arrangement in reaction chamber inner cavity, to generate electrical suction effect to the indoor plasma-based of reaction.Present invention simultaneously discloses a kind of deposition methods suitable for the chemical vapor deposition unit.The present invention generates electrical suction effect to the plasma-based in reaction chamber using electric field arrangement, move the previous object of source material or film in plasma-based before film forming, to promote the uniformity of deposition film, it also can be effectively controlled and reduce simultaneously the thickness of deposition film, it avoids prior art because being deposited into the trouble that must be separately ground compared with thick film, improves the service efficiency of plasma enhanced chemical deposition reaction chamber and the process efficiency of film.
Description
Technical field
The present invention relates to technical field of film preparation more particularly to a kind of chemical vapor deposition unit and it is suitable for the chemistry
The deposition method of vapor phase growing apparatus.
Background technique
Chemical vapor deposition (CVD, Chemical Vapor Deposition) is by source material (or reaction source, film
Previous object) in gaseous form (or process gas) be introduced into reaction chamber, react via oxidation, reduction or with substrate surface side
Formula is chemically reacted, and product is borrowed interior diffusion and deposited over the substrate surface to form film.CVD is in the reaction chamber
Fabrication steps substantially include: 1) gas or gas phase source material are introduced in reaction chamber；2) source material diffuses through boundary layer simultaneously
Contact substrate surface；3) source material adsorbs over the substrate surface；4) source material adsorbed moves over the substrate surface；5) in substrate
Start to chemically react on surface；6) solid byproducts form nucleus over the substrate surface；7) nucleus growth is at island；8) island
Object is merged into continuous film；9) other gas by-products fall off from substrate surface releases；10) gas by-product diffuses through side
Interlayer；11) gas by-product flows out reaction chamber.
Existing a kind of plasma enhanced (auxiliary) CVD (PECVD, Plasma Enhanced CVD) in the field CVD,
PECVD is widely used in oxide and nitride film deposits.The deposition principle of PECVD and general CVD have no too many differences,
Wherein the reactant in plasma-based is the higher ion of chemical activity or free radical, and substrate surface also can be compared with by the shock of ion
High chemical activity, therefore can promote the chemical reaction rate of substrate surface, therefore have can be in lower temperature deposition film by PECVD
Advantage.In addition, also there is a kind of distal end (Remote) PECVD in PECVD technique field, i.e., one plasma-based is set in reaction chamber foreign side
Generating chamber, i.e. referred to as distal end plasma generating chamber, are passed through source material first in the plasma generating chamber in gaseous form and form plasma-based,
The plasma-based is introduced in reaction chamber again.
In the related fieldss such as CVD, PECVD, far-end PE CVD, existing a lot of prior art, such as US 5908602, US
6444945, US 2006/0177599, US 61/137839 (TWI532414) etc.；Most of existing PECVD devices are to be used for
It is deposited on a small scale (i.e. less than 1 square centimeter), this is because most of plasma sources are extremely short and are only coated with small area, wherein US
Though 6444945 disclose a kind of plasma source for being based on parallel electrical emitting surface (i.e. two parallel electrode plates), more energy is consumed
And cost of manufacture is improved relatively；US 61/137839 is then disclosed generates linear and two-dimentional plasma-based for the electricity suitable for PECVD respectively
Slurry source.
In addition, the film deposited using CVD or PECVD technique, the general needs with multifrequency nature, such as good ladder
Covering power, ability, good the thickness uniformity, high purity and density with filling high-aspect-ratio gap etc..With PECVD skill
In the film that art is deposited, it is known that PECVD technique has own shortcomings: one is, in the plasma-based of reaction chamber, source material
Or uniformity of the previous object of film before being deposited on substrate surface be not enough, causes to be deposited on substrate surface and is formed
The uniformity of film is also relatively not good enough；The second is source material or the previous object of film be usually first nucleated to fit it is enough after
Ability freely falling body is deposited on substrate surface, and the thickness for causing to be deposited on formed film on substrate surface often has a base
This thickness, and can not be thinner, also make before carrying out subsequent PECVD film forming processing procedure, one of polish process must be increased more, to
Keep the film more evenly smooth.
Therefore, in PECVD technique field, how to enable deposition film that there is preferable the thickness uniformity and relatively thin thickness
Degree, be present invention mainly solves the problem of.
Summary of the invention
It is an object of the invention to propose a kind of chemical vapor deposition unit, plasma enhanced chemistry gas can be effectively improved
The thickness uniformity of deposition film in phase deposition manufacture process, and reduce the thickness of film.
Another object of the present invention is to propose a kind of deposition method suitable for the chemical vapor deposition unit.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of chemical vapor deposition unit, including reaction chamber, the process gas inlets and byproduct that are connected with reaction chamber
Outlet port, the reaction chamber is interior to be equipped with platform, flat surface is fixed on the platform, to bearing substrate；In the reaction chamber
Have and plasma-based is formed by by process gas, an at least electric field arrangement is equipped in the reaction chamber inner cavity, to in reaction chamber
Plasma-based generate electrical suction effect.
As a kind of preferred embodiment of chemical vapor deposition unit, including the first electric field arrangement, first electric field arrangement
On the ring perimeter wall of the reaction chamber inner cavity, moved for expanding plasma-based towards outer ring periphery by the center of reaction chamber.
As a kind of preferred embodiment of chemical vapor deposition unit, first electric field arrangement passes through line using radio-frequency current
Circle forms electric field, and the radio frequency of first electric field arrangement selects different radio frequency according to source material density, and the radio frequency includes:
700V/m ± 6%, 800V/m ± 3%, 1200V/m ± 3%, 1300V/m ± 6%, 1700V/m ± 3% and 1900V/m ± 6%.
As a kind of preferred embodiment of chemical vapor deposition unit, including the second electric field arrangement, second electric field arrangement
Set on the lower section in reaction chamber inner platform face, for adsorbing plasma-based and being deposited on substrate surface.
As a kind of preferred embodiment of chemical vapor deposition unit, second electric field arrangement passes through spiral shell using radio-frequency current
It revolves shape coil and forms electric field, and second electric field arrangement selects different radio frequency according to source material gas chromatography concentration, it is described to penetrate
Frequency include: 90uV/m ± 4.5%, 100uV/m ± 1.5%, 400uV/m ± 1.5%, 500uV/m ± 4.5%, 900uV/m ±
1.5% and 1100uV/m ± 4.5%.
As a kind of preferred embodiment of chemical vapor deposition unit, including RF magnetic field device, the RF magnetic field device
At the center lower section in reaction chamber inner platform face, to control the epitaxy angle being deposited on substrate surface.
As a kind of preferred embodiment of chemical vapor deposition unit, set in the reaction chamber there are two parallel electrode plate,
The reaction chamber is externally provided with the r-f generator being electrically connected with the electrode plate, for making process gas form electricity in the reaction chamber
Slurry.
It is equipped with as a kind of preferred embodiment of chemical vapor deposition unit, between the process gas inlets and reaction chamber remote
Plasma generating chamber is held, for making process gas form plasma-based before entering in the reaction chamber.
As a kind of preferred embodiment of chemical vapor deposition unit, the byproduct outlet port is connected with vacuum pump, is used for
Except gas by-product extraction room.
As a kind of preferred embodiment of chemical vapor deposition unit, heating device is provided in the platform.
A kind of deposition method suitable for such as above-mentioned chemical vapor deposition unit comprising following steps:
A: an at least substrate is placed in flat surface in the reaction chamber；
B: the plasma-based formed by process gas is provided into reaction chamber；
C: starting electric field arrangement, to generate electrical suction effect to the indoor plasma-based of reaction.
As a kind of preferred embodiment of deposition method, the step C includes step C1: the first electric field arrangement of starting makes electricity
Source material in slurry is expanded towards outer ring periphery by the center of reaction chamber and is moved before adsorbing and being deposited on substrate surface.
As a kind of preferred embodiment of deposition method, the step C further includes step C2: the second electric field arrangement of starting makes
Source material in plasma-based adsorbs under the action of the electrical property adsorption capacity and is deposited on substrate surface.
As a kind of preferred embodiment of deposition method, the step C2 is set to after step C1, that is, closes first electricity
After field device, restart the second electric field arrangement.
As a kind of preferred embodiment of deposition method, step D is additionally provided with after the step C2: starting RF magnetic field dress
It sets, to control the epitaxy angle being deposited on substrate surface.
The invention has the benefit that
The present invention generates electrical suction effect to the plasma-based in reaction chamber using electric field arrangement, make source material in plasma-based or
The previous object of film can borrow the electrical property suction effect and move before adsorbing and being deposited on substrate surface to form film
It is dynamic, to promote the uniformity of deposition film, while it also can be effectively controlled and reducing the thickness of deposition film, avoid prior art
Because being deposited into the trouble that must be separately ground compared with thick film, improve plasma enhanced chemical deposition reaction chamber service efficiency and
The process efficiency of film.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure for the chemical vapor deposition unit that the embodiment of the present invention one provides；
Fig. 2 is the schematic diagram of the section structure of chemical vapor deposition unit provided by Embodiment 2 of the present invention.
It is marked in figure as follows:
10- reaction chamber；11- process gas inlets；12- byproduct outlet port；13- platform；14- flat surface；15- electrode
Plate；151- r-f generator；20- substrate；30- plasma-based；The first electric field arrangement of 40-；The second electric field arrangement of 50-；60- RF magnetic field
Device；The distal end 80- plasma generating chamber.
Specific embodiment
To keep the technical problems solved, the adopted technical scheme and the technical effect achieved by the invention clearer, below
It will be described in further detail in conjunction with technical solution of the attached drawing to embodiment of the present invention, it is clear that described embodiment
Only some embodiments of the invention, rather than whole embodiments.Based on the embodiment in the present invention, this field
Technical staff's every other embodiment obtained without creative efforts belongs to what the present invention protected
Range.
Embodiment one
As shown in Figure 1, present embodiments providing a kind of preferred plasma enhanced chemical vapor deposition unit, which includes
Reaction chamber 10, the process gas inlets 11 being connected with reaction chamber 10 and byproduct outlet port 12, reaction chamber 10 is interior to be equipped with platform
13, be provided with heating device in the platform 13, substrate 20 can be heated, with provide form plasma-based 30 needed for temperature；It is flat
Flat surface 14 is fixed on platform 13, at least one substrate 20 of bearing, flat surface 14 can be preferably set to rotate herein
Structure, to improve the film effect of reaction chamber；Have in reaction chamber 10 and plasma-based 30, reaction chamber 10 are formed by by process gas
An at least electric field arrangement is equipped in inner cavity, to generate electrical suction effect to the plasma-based 30 in reaction chamber 10.Here processing procedure
Gas refers to, includes the gas of source material (or the previous object of reaction source, film).
Specifically, which is the first electric field arrangement 40 being located on the ring perimeter wall of 10 inner cavity of reaction chamber, to
Electrical suction effect is generated to the plasma-based 30 in reaction chamber 10, the previous object of source material or film in plasma-based 30 is made to adsorb and sink
Product can be expanded towards outer ring periphery by the center of reaction chamber 10 and be moved, so as to promoting before on 20 surface of substrate to form film
The uniformity of deposition film, the service efficiency and its process efficiency of the reaction chamber 10 to promote PECVD.In addition, first electricity
Field device 40 is that electric field is formed by coil using radio-frequency current, wherein the radio frequency of the radio-frequency current can according to source material density and
Varying strength is selected, it includes: 700V/m ± 6%, 800V/m ± 3%, 1200V/m ± 3%, 1300V/m ± 6%, 1700V/m
± 3% and 1900V/m ± 6%, i.e. radio frequency can be in (700 ± 700*6%) V/m, or (800 ± 800*3%) V/m, or (1200
± 1200*3%) V/m, or (1300 ± 1300*6%) V/m, or (1700 ± 1700*3%) V/m, or (1900 ± 1900*6%)
It is selected in the range of V/m.
Further, which further includes the second electric field arrangement 50 for being located at 14 lower section of flat surface in reaction chamber 10,
To generate electrical suction effect to the plasma-based 30 in reaction chamber 10, enable source material or the previous object of film in the plasma-based 30
It adsorbs and is deposited on a substrate 20 at least surface by means of the electrical property suction effect, to effectively control and reduce deposition film
Thickness, and can avoid prior art after being deposited into compared with thick film must attrition process again trouble, to promoted PECVD it
The process efficiency of reaction chamber 10.In addition, second electric field arrangement 50 is (to be with Z axis by spiral coil using radio-frequency current
Central axis winding) electric field is formed, wherein the radio frequency of the radio-frequency current can be selected different strong according to source material gas chromatography concentration
Degree, it includes: 90uV/m ± 4.5%, 100uV/m ± 1.5%, 400uV/m ± 1.5%, 500uV/m ± 4.5%, 900uV/m
± 1.5% and 1100uV/m ± 4.5%, i.e. radio frequency can be in (90 ± 90*4.5%) uV/m, or (100 ± 100*1.5%) uV/
M, or (400 ± 400*1.5%) uV/m, or (500 ± 500*4.5%) uV/m, or (900 ± 900*1.5%) uV/m, or
It is selected in the range of (1100 ± 1100*4.5%) uV/m.
It should be noted that should first close the electric field of the first electric field arrangement 40 when usually operating, restart the second electric field dress
Set 50 electric field.But the present invention is not limited thereto, that is, first electric field arrangement 40 and second electric field arrangement 50 can be with
Individually it is arranged and works.After actuation due to second electric field arrangement 50, being formed by field effect can be actively right
Plasma-based 30 in reaction chamber 10 generates electrical suction, to force the source material or the previous object energy of film in the plasma-based 30
Accelerate to adsorb and be deposited on an at least surface for substrate 20, therefore can effectively control and reduce the thickness of deposition film.
Further, which further includes the center (Z axis in such as the 1st figure for being located at 10 inner platform face 14 of reaction chamber
It is shown) lower section at RF magnetic field device 60 equally may be used to control the epitaxy angle being deposited on at least surface of substrate 20
To avoid prior art after deposit must attrition process again trouble, to promote the service efficiency and system of PECVD reaction chamber 10
Journey efficiency.
Preferably, be equipped with upper and lower two parallel electrode plates 15 in the present embodiment reaction chamber 10, reaction chamber 10 be externally provided with
The r-f generator 151 that electrode plate 15 is electrically connected, for making process gas form plasma-based 30 in reaction chamber 10；The design structure
Simply, easy to use, be conducive to reduce plant bulk, save equipment and taken up space.Herein, the present embodiment uses two parallel poles
Plate 15 simultaneously borrows r-f generator 151 to bestow radio frequency, so that process gas can form plasma-based 30, but the present invention in the reaction chamber 10
It is not limited thereto, plasma-based 30 can also be made of other device in other cases.In addition, byproduct extraction of the present invention
Mouth 12 is also connected with vacuum pump, except the gas by-product extraction room 10 after reacting.
Embodiment two
As shown in Fig. 2, the present embodiment proposes another preferred plasma enhanced chemical vapor deposition unit, the device and reality
The chemical vapor deposition unit applied in example one is essentially identical, and difference place is: the formation device of plasma-based 30 is different.
In the present embodiment, it is equipped with distal end plasma generating chamber 80 between process gas inlets 11 and reaction chamber 10, is made for making
Journey gas forms plasma-based 30 before entering reaction chamber 10, is then re-introduced into reaction chamber 10 and carries out deposition film.Specifically, should
Plasma-based 30 be it is produced when external energy is greater than the dissociation energy of process gas, be it is a kind of by cation, negative electron and it is neutral from
The part dissociation gas being made of base.
Two parallel electrode plates 15 need not be arranged relative to embodiment one by setting distal end plasma generating chamber 80 in the present embodiment
With r-f generator 151, the internal structure of reaction chamber 10 is simplified, reduces equipment making cost.Preferably, the process gas
It is additionally provided with gas flowmeter at entrance 11, for accurately controlling into the gas flow in distal end plasma generating chamber 80.
Embodiment three
The present embodiment proposes a kind of deposition method suitable for above-mentioned chemical vapor deposition unit, specifically includes following step
It is rapid:
A: at least one substrate 20 is placed in the flat surface 14 in reaction chamber 10, and here, 20 shape of substrate is unlimited, number
Depending on amount is according to the size of flat surface 14.
B: the plasma-based 30 formed by process gas is provided into reaction chamber 10；
In the step, plasma-based 30 can be what source material was formed in reaction chamber 10, be also possible to raw material first in distal end
It is formed in plasma generating chamber 80, then is passed into reaction chamber 10 by process gas inlets 11.
C1: the first electric field arrangement 40 of starting, first electric field arrangement 40 are located at the ring periphery of 10 inner cavity of PECVD reaction chamber
On wall, to generate electrical suction effect to the plasma-based 30 in reaction chamber 10, make source material or the previous object of film in plasma-based 30
Adsorb and be deposited on this at least on the surface of a substrate 20 to form film before, can be by the center of reaction chamber 10 towards outer ring week
Edge expansion movement, so as to promoting the uniformity of deposition film.
C2: the lower section of flat surface 14 in reaction chamber 10 is arranged in the second electric field arrangement 50 of starting, second electric field arrangement 50,
To generate electrical suction effect to the plasma-based 30 in reaction chamber 10, enable source material or the previous object of film in the plasma-based 30
It adsorbs and is deposited on 20 surface of substrate by means of the electrical property adsorption capacity.
Preferably, step C1 is arranged before step C2 in the present embodiment, that is, after closing the first electric field arrangement 40, restarts
Second electric field arrangement 50；This has fully ensured that uniformity of the plasma-based 30 before being deposited as film first, improves film quality；
Secondly, also adding film efficiency, film thickness is effectively reduced.Certainly, in other cases, the present invention can also only be set
Step C1 is set, or only setting steps C2 or step C1 and step C2 is carried out simultaneously.
D: starting RF magnetic field device 60, the RF magnetic field device 60 are located at the center of the flat surface 14 in the reaction chamber 10
At lower section, to control the epitaxy angle being deposited on 20 surface of substrate.
Note that the above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The industry
Technical staff it should be appreciated that the present invention is not limited to the embodiments described above, described in above embodiment and specification
Merely illustrate the principles of the invention, without departing from the spirit and scope of the present invention, the present invention also have various change and
It improves, these changes and improvements all fall within the protetion scope of the claimed invention, and claimed range of the invention is by appended
Claims and its equivalent thereof.
Claims (8)
1. a kind of chemical vapor deposition unit, including reaction chamber (10), the process gas inlets being connected with reaction chamber (10)
(11) and byproduct outlet port (12) platform (13), are equipped in the reaction chamber (10), are fixed with platform on the platform (13)
Face (14), to bearing substrate (20)；Have in the reaction chamber (10) and plasma-based (30), feature are formed by by process gas
It is, is provided with gas flowmeter at the process gas inlets (11)；Heating device is provided in the platform (13), it can be right
Substrate (20) is heated, temperature needed for forming plasma-based (30) with offer；The flat surface (14) is the structure that can be rotated；
It is equipped with an at least electric field arrangement in reaction chamber (10) inner cavity, is electrically inhaled to be generated to the plasma-based (30) in reaction chamber (10)
Stress effect；
It further include RF magnetic field device (60), the RF magnetic field device (60) is set to the reaction chamber (10) inner platform face (14)
Center lower section at, to control the epitaxy angle being deposited on substrate (20) surface.
2. chemical vapor deposition unit according to claim 1, which is characterized in that including the first electric field arrangement (40), institute
The first electric field arrangement (40) are stated on the ring perimeter wall of the reaction chamber (10) inner cavity, for making plasma-based (30) by reaction chamber
(10) center is expanded towards outer ring periphery moves.
3. chemical vapor deposition unit according to claim 2, which is characterized in that first electric field arrangement (40) utilizes
Radio-frequency current forms electric field by coil, and the radio frequency of first electric field arrangement (40) selects difference to penetrate according to source material density
Frequently, the radio frequency includes: 800V/m ± 3%, 1200V/m ± 3% and 1700V/m ± 3%.
4. chemical vapor deposition unit according to claim 1, which is characterized in that including the second electric field arrangement (50), institute
The lower section that the second electric field arrangement (50) are set to the reaction chamber (10) inner platform face (14) is stated, for adsorbing plasma-based (30) and sinking
Product is in substrate (20) surface.
5. chemical vapor deposition unit according to claim 4, which is characterized in that second electric field arrangement (50) utilizes
Radio-frequency current forms electric field by spiral coil, and second electric field arrangement (50) is selected according to source material gas chromatography concentration
With different radio frequency, the radio frequency includes: 100uV/m ± 1.5%, 400uV/m ± 1.5% and 900uV/m ± 1.5%.
6. chemical vapor deposition unit according to claim 1-5, which is characterized in that in the reaction chamber (10)
If the reaction chamber (10) is externally provided with the radio frequency being electrically connected with the electrode plate (15) and generates there are two parallel electrode plate (15)
Device (151), for making process gas form plasma-based (30) in reaction chamber (10).
7. chemical vapor deposition unit according to claim 1-5, which is characterized in that the process gas inlets
(11) distal end plasma generating chamber (80) are equipped between reaction chamber (10), for making process gas before entering reaction chamber (10)
It is formed plasma-based (30).
8. a kind of deposition method suitable for such as described in any item chemical vapor deposition units of claim 1-7, feature exist
In, comprising the following steps:
A: an at least substrate (20) is placed in the flat surface (14) in reaction chamber (10)；
B: to the plasma-based (30) that offer is formed by process gas in reaction chamber (10)；
C1: starting the first electric field arrangement (40), make source material in plasma-based (30) adsorb and be deposited on substrate (20) surface it
Before, it is expanded and is moved towards outer ring periphery by the center of reaction chamber (10)；
C2: it closes the first electric field arrangement (40), then starts the second electric field arrangement (50), make the source material in plasma-based (30) at this
It is adsorbed under the action of electrical adsorption capacity and is deposited on substrate (20) surface；
D: starting RF magnetic field device (60), to control the epitaxy angle being deposited on substrate (20) surface.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012104578A (en) * | 2010-11-09 | 2012-05-31 | Panasonic Corp | Plasma doping method and apparatus |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| CN203498467U (en) * | 2013-07-31 | 2014-03-26 | 中国科学院金属研究所 | Device for depositing film on internal surface of long pipe by using plasma enhanced chemical vapor deposition |
| CN206204417U (en) * | 2016-11-14 | 2017-05-31 | 张宇顺 | Chemical vapor deposition unit |
-
2016
- 2016-11-14 CN CN201611029745.6A patent/CN106367735B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012104578A (en) * | 2010-11-09 | 2012-05-31 | Panasonic Corp | Plasma doping method and apparatus |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| CN203498467U (en) * | 2013-07-31 | 2014-03-26 | 中国科学院金属研究所 | Device for depositing film on internal surface of long pipe by using plasma enhanced chemical vapor deposition |
| CN206204417U (en) * | 2016-11-14 | 2017-05-31 | 张宇顺 | Chemical vapor deposition unit |
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