CN106357228A - Current amplifier and transmitter using the same - Google Patents
Current amplifier and transmitter using the same Download PDFInfo
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- CN106357228A CN106357228A CN201610541511.3A CN201610541511A CN106357228A CN 106357228 A CN106357228 A CN 106357228A CN 201610541511 A CN201610541511 A CN 201610541511A CN 106357228 A CN106357228 A CN 106357228A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—Dc amplifiers in which all stages are dc-coupled
- H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
Abstract
The invention relates to a current amplifier and a transmitter using the same. The current amplifier has a first and second transistor and a voltage level shifting unit. The first transistor has a gate receiving an input current and a drain receiving a driving current. The voltage level shifting unit providing a voltage shift is coupled between the drain of the first transistor and the gate of the second transistor. An output current is generated at the drain of the second transistor.
Description
The application is Application No. 13/910,615, and the applying date is the cip application of the patent on June 5th, 2013, this
Application also claims Application No. 62/192,154, the applying date is the priority of the U.S. Provisional Patent Application on July 14th, 2015,
62/192,154 all technical characteristic is all contained in the application.
[technical field]
The present invention relates to field of circuit technology, more particularly, to current amplifier and transmitter.
[background technology]
Now, Modern Communication System requires High Data Rate and long range propagation.Therefore, the transmitter of high speed and High Linear
(transmitter) become more and more important.Current mode (current-steering) digital-analog convertor (digital-
To-analog converter, dac) it is the preferred device implementing high speed and high-resolution transmitter, but it is difficult to design
Not only met big output when working under senior engineer's working frequency (operating frequency) and swung (output swing) but also full
Current mode dac of the little distortion (distortion) of foot.Therefore, solved the above problems using current amplifier at present, but
Be currently available that current amplifier mostly complex structure, and the VD of current amplifier tend not to reach desired
Optimum, and be accomplished by setting sufficiently large by supply voltage to realize desired optimal output, so very power consumption.
[content of the invention]
The transmitter that the present invention provides current amplifier and includes current amplifier of the present invention, can make the direct current of amplifier defeated
Go out voltage and reach desired optimum.
Specifically, the embodiment of the invention discloses a kind of current amplifier, it mays include: the first transistor, this first crystalline substance
Body pipe includes: source electrode, for the grid of receives input electric current, and for receiving the drain electrode of driving current；Transistor seconds, should
Transistor seconds includes: grid, source electrode and drain electrode；Voltage level shifting unit, is coupled to the described leakage of described the first transistor
Between pole and the described grid of described transistor seconds, for providing variation (voltage shift)；Wherein, described electricity
Stream amplifier produces output current in the described drain electrode of described transistor seconds.
Further, the invention discloses including the transmitter of above-mentioned current amplifier, it is except including above-mentioned Current amplifier
Outside device, also include: single ended digital-analog converter, this single ended digital-analog converter includes being coupled to described Current amplifier
The Single-end output end of the described grid of the described the first transistor of device.
In addition, present invention also offers another kind of current amplifier, it mays include: the first transistor, this first transistor
Including: source electrode, for receiving the grid of positive input electric current, and for receiving the drain electrode of the first driving current；Transistor seconds,
This transistor seconds includes: grid, source electrode and drain electrode；Third transistor, this third transistor includes: source electrode, negative for receiving
The grid of input current, and for receiving the drain electrode of the second driving current；4th transistor, the 4th transistor includes: grid
Pole, source electrode and drain electrode；Voltage level shifting unit, is coupled to the described drain electrode of described the first transistor and described transistor seconds
Described grid between, to provide first voltage to offset, and the described drain electrode and described the being coupled to described third transistor
Between the described grid of four transistors, to provide second voltage to offset；Wherein, described current amplifier is in described transistor seconds
Described drain electrode produce negative output current, produce positive output electric current in the described drain electrode of described 4th transistor.
Accordingly, present invention also offers including the transmitter of above-mentioned another kind current amplifier, it is above-mentioned except including
Current amplifier outside, also include: differential digital-analog converter, this differential digital-analog converter includes: is coupled to
The positive output end of described grid of the described the first transistor of described current amplifier and the institute being coupled to described current amplifier
State the negative output terminal of the described grid of third transistor.
In sum, the transmitter of the current amplifier disclosed in the embodiment of the present invention and the described current amplifier of inclusion leads to
Overvoltage electrical level shift units providing variation so that the VD of current amplifier is reached by regulation
Desired optimum.
[brief description]
The present invention can by read subsequent detailed description and refer to the attached drawing for embodiment be more fully understood, its
In:
Fig. 1 describes the current amplifier of one embodiment of the present of invention.
Fig. 2 describes a kind of transmitter 200 of single-ended design.
Fig. 3 a-3c shows multiple embodiments of multiple current amplifiers of the present invention.
Fig. 4 a describes according to the current amplifier in the pseudo differential architectures of one embodiment of the present of invention.
Fig. 4 b describes according to the current amplifier in the pseudo differential architectures of an alternative embodiment of the invention.
Fig. 5 describes the transmitter in differential configuration.
Fig. 6 describes according to an alternative embodiment of the invention for input current iin is converted to output current io
Current amplifier.
Fig. 7 describes the transmitter 700 of single-ended design.Transmitter 700 include the current amplifier of Fig. 6 and single ended digital-
Analog converter 202.
Fig. 8 shows the embodiment of the current amplifier also including transistor m3 compared with the current amplifier of Fig. 6.
Fig. 9 a- Fig. 9 d shows multiple voltage electrical level shift units vshift.
Figure 10 a and Figure 10 b describes the pseudo-differential current amplifier with voltage level shifting mechanism.
Figure 11 a and Figure 11 b describes two kinds of voltage level shifting unit vshift that can be used for pseudo-differential framework.
Figure 12 shows an embodiment of common-mode voltage sensor 1100.
[specific embodiment]
Explained below illustrates the multiple embodiments implementing the present invention.Here description is used merely to explain the base of the present invention
Present principles and should not be used to limit the present invention.
Fig. 1 describes the current amplifier of one embodiment of the present of invention.This current amplifier includes at least two crystal
Pipe (transistor) m1 and m2, also includes at least two impedances (impedance) circuit zi and zs.The grid of transistor m1 leads to
Cross node x and be coupled to prime (former-stage) circuit.As illustrated, the drain electrode of transistor m1 is coupled to an electric current
Source (is reduced to impedor zo), and the source-biased of transistor m1 is in constant voltage level (for example, ground terminal, but not limited to this).
The grid of transistor m2 is coupled to described current source (zo), and transistor m2 also includes source electrode and drain electrode.Impedance circuit zi is coupled to
Between the source electrode of the grid of transistor m1 and transistor m2.Impedance circuit zs is coupled between source electrode and the ground terminal of transistor m2.
Current amplifier produces output current io according to the input current iin receiving in the drain electrode of transistor m2.Can be by load impedance zl
It is coupled to the drain electrode of transistor m2, described output current io is converted to magnitude of voltage.
Transistor m1, m2 and impedance structure zo, zi and zs form negative feedback loop.Therefore, described node x AC earth
(ac grounded), but due to loop gain, only exist very little AC signal.Thus, vi=iin*zi, and io=
(vi/zs)-iin=[(- iin*zi)/zs-iin]=iin (1+zi/zs).Current gain, (1+ is produced between iin and io
zi/zs).
Note that the source electrode of transistor m1 has been not connected with current source.The voltage level of the source electrode of transistor m1 passes through constant
Voltage bias keep constant rather than keep constant by the offset design of general mode.Therefore, the Current amplifier of the present invention
Device plays good effect in single-ended applications.
Fig. 2 describes a kind of transmitter 200 of single-ended design.Transmitter 200 includes the current amplifier described in Fig. 1, separately
Also include a single ended digital-analog converter 202 outward.The output signal of single ended digital-analog converter 202 is coupled to crystal
The grid of pipe m1.Single ended digital-analog converter 202 passes through described node x provides input current to described current amplifier
Iin, described current amplifier subsequently produces a Single-end output electric current io, and described Single-end output electric current io is coupled to load resistance
Anti- zl, to realize the conversion of current-voltage.Because the described source electrode of the described transistor m1 of described current amplifier does not need to appoint
What active member (active device), therefore, when being applied to transmission operation (transmission operations), schemes
Current amplifier in 1 can obtain low noise and high bandwidth.
Fig. 3 a-3c shows multiple embodiments of multiple current amplifiers of the present invention.Wherein, the grid of transistor m3 is inclined
It is placed in bias voltage vb, the source electrode of transistor m3 is coupled to the drain electrode of transistor m1, the drain electrode of transistor m3 is coupled to current source
Cs and the grid of transistor m2.
In fig. 3 a, resistance ri is coupled between the grid of transistor m1 and the source electrode of transistor m2, to implement in Fig. 1
Impedance circuit zi, resistance rs are coupled between source electrode and the ground terminal of transistor m2, to implement the impedance circuit zs in Fig. 1.Due to
Feedback network is formed by m1, m2, cs, ri and rs, and therefore, no matter node x is injected into how many input current iin, the grid of m1
Pole tension remains constant.This represents that the current amplifier of the present invention has little input impedance.The voltage at ri two ends with
Iin and change, and io=- (1+ri/rs) * iin.Can be by changing the resistance (resistance) of ri and rs to control
State the current gain of current amplifier.With the biography needing extra aggressive device to realize syntype bias (common mode bias)
The current amplifier of system is compared, and the current design of the present invention is more simple.
Compared with Fig. 3 a, Fig. 3 b also includes the electric capacity ci in parallel with resistance ri.Ri and ci being connected in parallel forms the resistance of Fig. 1
Reactive circuit zi, using as a low pass filter.
Compared with Fig. 3 a, Fig. 3 c also includes the electric capacity cs in parallel with resistance rs.Rs and cs being connected in parallel forms the resistance of Fig. 1
Reactive circuit zs, using as a high pass filter.
Implementing of the impedance circuit of Fig. 3 a-3c is not intended to limit the scope of the present invention.For example, can by a pair simultaneously
Resistance that connection connects and electric capacity are implementing impedance circuit zi, and the resistance by being connected in parallel for a pair and electric capacity implement impedance
Circuit zs, finally to realize band-pass function.
Further, the circuit of Fig. 4 provides a kind of pseudo-differential (pseudo differential) current amplifier.
Fig. 4 a describes according to the current amplifier in the pseudo differential architectures of one embodiment of the present of invention.First, discuss
The right half part of the circuit in Fig. 4 a.The grid of transistor m11 is coupled to the positive output end of front stage circuits for receiving
The drain electrode of positive input (positive input) electric current iin+, transistor m11 is coupled to current source cs1, the source electrode of transistor m11
It is offset to constant voltage level (for example, ground terminal, but be not limited to ground terminal).Transistor m12 includes being coupled to the grid of current source cs1
Pole, also includes source electrode and drain electrode.Impedance circuit z11 is coupled between the grid of transistor m11 and the source electrode of transistor m12.Resistance
Reactive circuit z12 is coupled between source electrode and the ground terminal of transistor m12.Transistor m13 is optional equipment, including being offset to voltage vb
Grid, be coupled to transistor m11 drain electrode source electrode, and, be coupled to the leakage of the grid of current source cs1 and transistor m12
Pole.Produce a negative output current io- in the drain electrode of transistor m12.
Then, the left-half of the circuit of Fig. 4 a is discussed.The grid of transistor m21 is coupled to the negative defeated of described prime electric current
Go out end and be coupled to current source cs2 for receiving negative input electric current iin-, the drain electrode of transistor m21, the source electrode of transistor m21 is inclined
It is placed in described constant voltage level (as illustrated, connecting to earth terminal).Transistor m22 includes being coupled to the grid of current source cs2
Pole, also includes source electrode and drain electrode.Impedance circuit z21 is coupled between the grid of transistor m21 and the source electrode of transistor m22.Resistance
Reactive circuit z22 is coupled between source electrode and the ground terminal of transistor m22.Transistor m23 is optional equipment, including being offset to voltage vb
Grid, be coupled to transistor m21 drain electrode source electrode, and, be coupled to the drain electrode of the grid of current source cs2 and transistor m22.
Produce a positive output electric current io+ in the drain electrode of transistor m22.
Fig. 4 b describes according to the current amplifier in the pseudo differential architectures of an alternative embodiment of the invention.In Fig. 4 a
Current amplifier compare, the circuit in Fig. 4 b also provides resistance r, for by the source of the source electrode of transistor m11 and transistor m21
Pole is coupled to earth terminal.Therefore, the source-biased of the source electrode of transistor m11 and transistor m21 in constant voltage level i*r rather than
Earth level.
Described constant voltage level for biasing the source electrode of transistor m11 and the source electrode of transistor m21 is not limited to institute
State earth level or voltage level v (=i*r).Arbitrary source electrode and the crystalline substance arbitrary current source not connected to transistor m11
The constant voltage offset circuit of the source electrode of body pipe m21 belongs to the scope of the present invention.Source electrode and transistor due to transistor m11
The source electrode of m21 does not need aggressive device, and therefore, when for transmission operation, the pseudo- current amplifier of the present invention can ensure low noise
Sound and high bandwidth.
According to one embodiment of the present of invention, Fig. 5 describes the transmitter in differential configuration, and this transmitter includes pseudo-differential
Current amplifier 502 and differential digital-analog converter 504.Pseudo-differential current amplifier 502 can be by the electricity in Fig. 4 a or Fig. 4 b
Road is implemented.Differential digital-analog converter 504 includes being respectively used to providing described positive input to pseudo-differential current amplifier 502
The positive output end of electric current iin+ and described negative input electric current iin- and negative output terminal.
Fig. 6 describes according to an alternative embodiment of the invention for input current iin is converted to output current io
Current amplifier.Compared to Figure 1, the current amplifier in Fig. 6 also includes grid and the transistor m1 being coupled to transistor m2
Drain electrode between be used for providing voltage level shifting unit (the voltage level of variation (voltage shift)
shifting unit)vshift.The drain electrode of transistor m1 receives driving current id.In one embodiment, voltage level shifting
Unit vshift is used for making transistor m1 work in zone of saturation (saturation region).Therefore, the electric current in Fig. 6 is put
Big device can be operated in desired direct current voltage (that is, being operated in desired VD), and impedance structure zo
The work of work and transistor m1 will not be suppressed (suppress) by the grid voltage vg of transistor m2.As illustrated, it is electric
The grid electricity of the grid of voltage level shift unit vshift pullup or pulldown (" pull up " or " pull down ") transistor m2
Pressure vg to be coupled to the drain electrode of transistor m1 to produce voltage level vo, to guarantee that transistor m1 is operated in zone of saturation.
In the embodiment in fig 6, the source electrode of transistor m1 is coupled to earth terminal.In certain embodiments, transistor m1
Source-biased is in constant voltage level.In certain embodiments, aggressive device is not had to be connected on the source electrode of transistor m1.
Fig. 7 describes the transmitter 700 of single-ended design.Transmitter 700 include the current amplifier of Fig. 6 and single ended digital-
Analog converter 202.The output of single ended digital-analog converter 202 is coupled to the grid of the transistor m1 of described current amplifier
Pole.Single ended digital-analog converter 202 is supplied to described one input current iin of current amplifier by node x, and described
Current amplifier produces a Single-end output electric current io to realize current-voltage conversion to be coupled to.
Fig. 8 shows the embodiment of the current amplifier also including transistor m3 compared with the current amplifier of Fig. 6.Brilliant
The grid of body pipe m3 is biased by bias voltage vb, and the source electrode of transistor m3 is coupled to the drain electrode of transistor m1, transistor
M3 also includes draining.Voltage level shifting unit vshift is coupled to the drain electrode of transistor m3.Grid voltage from transistor m2
The voltage level vo that vg shifts and comes is provided to the drain electrode of transistor m3.Impedance circuit zi and zs can be institute in Fig. 3 a- Fig. 3 c
The structure illustrating, or can be arbitrary filter configuration.
Fig. 9 a- Fig. 9 d shows multiple voltage electrical level shift units vshift.In Fig. 9 a and Fig. 9 b, voltage level shifting
Unit vshift includes resistance rst and current source ic.In fig. 9 a, variation (voltage shift) vos be on the occasion of, because
This grid voltage vg is shifted as higher voltage level vo.In figure 9b, voltage difference vos is negative value, therefore grid voltage vg
It is shifted as lower voltage level vo.In Fig. 9 c and 9d, voltage level shifting unit vshift includes transistor mst and electricity
Stream source ic.In Fig. 9 c (nmos (n-channel metal-oxide semiconductor (MOS)) follower), grid voltage vg passes through transistor mst
Grid and source electrode between voltage difference vos be shifted as higher voltage level vo.In Fig. 9 d, ((p-channel metal aoxidizes pmos
Thing quasiconductor) follower) in, grid voltage vg is shifted by voltage difference vos between the source electrode of transistor mst and grid
For lower voltage level vo.
Figure 10 a and Figure 10 b describes the pseudo-differential current amplifier with voltage level shifting mechanism.With Fig. 4 a and Fig. 4 b
Compare, the grid voltage vg1 and transistor m22 of the grid of voltage level shifting unit vshift pullup or pulldown transistor m12
Grid grid voltage vg2 producing voltage level vo1 and vo2.In one embodiment, voltage is made by transistor m13
Level vo1 is coupled to the drain electrode of transistor m11, so that transistor m11 is operated in zone of saturation.Voltage is made by transistor m23
Level vo2 is coupled to the drain electrode of transistor m21, so that transistor m21 is operated in zone of saturation.
In the embodiment of Figure 10 a, the source electrode of the source electrode of transistor m11 and transistor m21 is both coupled to earth terminal.One
In a little embodiments, the source-biased of the source electrode of transistor m11 and transistor m21 is in fixed voltage level.
Refer again to Fig. 5, pseudo-differential current amplifier 502 can be by the pseudo-differential electric current with voltage level shifting mechanism
Amplifier is implemented.Using High Linear pseudo-differential current amplifier and differential digital-analog converter transmitter also in the present invention
Within the scope of.
Figure 11 a and Figure 11 b describes two kinds of voltage level shifting unit vshift that can be used for pseudo-differential framework.
In fig. 11 a, voltage level shifting unit vshift includes common-mode voltage sensor (common mode
Voltage sensor) 1100, operational amplifier amp, trsanscondutance amplifier gm1 and gm2, and resistance rlv1 and rlv2.Voltage
Common-mode voltage vcm between level vo1 and vo2 is extracted by common-mode voltage sensor 1100 and passes to described operational amplifier
Amp is compared with reference to vcm_ref with common-mode voltage.The output signal of described operational amplifier amp is coupled to described respectively
Two trsanscondutance amplifier gm1 and gm2 flow through resistance rlv1 and rlv2 electric current to be converted to, with grid voltage vg1 (transistor
M12's) produce variation (voltage shift) and voltage level vo1 between, and in grid voltage vg2 (transistor
M22's) produce variation and voltage level vo2 between.Common-mode voltage vcm between voltage level vo1 and vo2 can final quilt
It is locked as described common-mode voltage with reference to vcm_ref, to guarantee that transistor m11 and m21 be operated in zone of saturation.
In Figure 11 b, voltage level shifting unit vshift includes common-mode voltage sensor 1100, trsanscondutance amplifier gm1 '
With gm2 ', and resistance rlv1 and rlv2.Each of trsanscondutance amplifier gm1 ' and gm2 ' includes two inputs, uses respectively
Common-mode voltage vcm (the voltage level obtained in reception common-mode voltage reference vcm_ref and by common-mode voltage sensor 1100
Between vo1 and vo2).Described two trsanscondutance amplifier gm1 ' and gm2 ' are according to common-mode voltage vcm and common-mode voltage with reference to vcm_
Voltage difference between ref determines the electric current flowing through resistance rlv1 and rlv2, with grid voltage vg1 (transistor m12's) and electricity
Variation (voltage shift) is produced between voltage level vo1, and in grid voltage vg2 (transistor m22's) and voltage
Variation is produced between level vo2.Common-mode voltage vcm between voltage level vo1 and vo2 can finally be locked into described common
Mode voltage with reference to vcm_ref, to guarantee that transistor m11 and m21 be operated in zone of saturation.
Figure 12 shows an embodiment of common-mode voltage sensor 1100.In this embodiment, common-mode voltage sensor
1100 include two resistance (being ' r ') with same resistance value.Common-mode voltage vcm between voltage level vo1 and vo2 takes
Common node from described two identical resistance.
In claims in order to modified elements the ordinal number such as " first ", " second " any excellent using itself not implying
First power, the chronological order of order of priority, the precedence between each element or performed method, and be used only as identifying to distinguish
There are the different elements of same names (having different ordinal numbers).
Though the present invention is disclosed above with preferred embodiment, so it is not limited to the scope of the present invention, any this area
Technical staff, without departing from the spirit and scope of the present invention, when can do a little change and retouching, the therefore protection of the present invention
Scope ought be defined depending on as defined in claim.
Claims (23)
1. a kind of current amplifier is it is characterised in that include:
The first transistor, this first transistor includes: source electrode, for the grid of receives input electric current, and drives for receiving
The drain electrode of electric current；
Transistor seconds, this transistor seconds includes: grid, source electrode and drain electrode；
Voltage level shifting unit, is coupled to the described drain electrode of described the first transistor and the described grid of described transistor seconds
Between, for providing variation；
Wherein, described current amplifier produces output current in the described drain electrode of described transistor seconds.
2. current amplifier as claimed in claim 1 it is characterised in that described voltage level shifting unit provided described
Variation is used for guaranteeing that described the first transistor is operated in zone of saturation.
3. current amplifier as claimed in claim 1 is it is characterised in that also include:
First impedance circuit, be coupled to the described grid of described the first transistor and described transistor seconds described source electrode it
Between；And
Second impedance circuit, is coupled between the described source electrode of described transistor seconds and earth terminal.
4. current amplifier as claimed in claim 1 it is characterised in that described the first transistor described source electrode directly with ground
End is connected.
5. current amplifier as claimed in claim 1 is it is characterised in that the described source-biased of described the first transistor is in solid
Determine voltage level.
6. current amplifier as claimed in claim 1 is not it is characterised in that have aggressive device to be coupled to described the first transistor
Described source electrode.
7. current amplifier as claimed in claim 1 is it is characterised in that also include:
Third transistor, this third transistor includes: drain electrode, is offset to the grid of bias voltage, and is coupled to described first
The source electrode of the described drain electrode of transistor；
Wherein, described voltage level shifting unit is coupled to the described drain electrode of described third transistor, to be coupled to described first
The described drain electrode of transistor.
8. current amplifier as claimed in claim 1 is it is characterised in that described voltage level shifting unit includes:
Resistance；
Current source, for providing the electric current flowing through described resistance, to produce the variation across described resistance two ends.
9. current amplifier as claimed in claim 1 is it is characterised in that described voltage level shifting unit is n-channel metal
Oxide semiconductor current follower or p-channel metal-oxide semiconductor (MOS) current follower.
10. a kind of transmitter is it is characterised in that include:
Current amplifier as claimed in any one of claims 1-9 wherein；And
Single ended digital-analog converter, this single ended digital-analog converter includes be coupled to described current amplifier described
The Single-end output end of the described grid of one transistor.
11. transmitters as claimed in claim 10 are it is characterised in that the institute of the described transistor seconds of described current amplifier
State drain electrode and be coupled to load impedance, so that output current is converted into magnitude of voltage.
A kind of 12. current amplifiers, are characterised by, comprising:
The first transistor, this first transistor includes: source electrode, for receiving the grid of positive input electric current, and for reception the
The drain electrode of one driving current；
Transistor seconds, this transistor seconds includes: grid, source electrode and drain electrode；
Third transistor, this third transistor includes: source electrode, for receiving the grid of negative input electric current, and for reception the
The drain electrode of two driving currents；
4th transistor, the 4th transistor includes: grid, source electrode and drain electrode；
Voltage level shifting unit, is coupled to the described drain electrode of described the first transistor and the described grid of described transistor seconds
Between, to provide first voltage to offset, and it is coupled to the described drain electrode of described third transistor and described 4th transistor
Between described grid, to provide second voltage to offset；
Wherein, described current amplifier produces negative output current in the described drain electrode of described transistor seconds, brilliant the described 4th
The described drain electrode of body pipe produces positive output electric current.
13. current amplifiers as claimed in claim 12 are it is characterised in that the institute that provided of described voltage level shifting unit
State first voltage and offset and be used for guaranteeing that described the first transistor is operated in zone of saturation, described voltage level shifting unit is provided
Described second voltage offset and be used for guaranteeing that described third transistor is operated in zone of saturation.
14. current amplifiers as claimed in claim 12 are it is characterised in that also include:
First impedance circuit, be coupled to the described grid of described the first transistor and described transistor seconds described source electrode it
Between；
Second impedance circuit, is coupled between the described source electrode of described transistor seconds and earth terminal；
3rd impedance circuit, be coupled to the described grid of described third transistor and described 4th transistor described source electrode it
Between；And
4th impedance circuit, is coupled between described source electrode and the described earth terminal of described 4th transistor.
15. current amplifiers as claimed in claim 12 are it is characterised in that the described source electrode of described the first transistor and described
The described source electrode of third transistor is directly connected with described earth terminal.
16. current amplifiers as claimed in claim 12 are it is characterised in that the described source electrode of described the first transistor and described
The described source-biased of third transistor is in fixed voltage level.
17. current amplifiers as claimed in claim 12 are not it is characterised in that have aggressive device to be coupled to described first crystal
The described source electrode of pipe, and do not have aggressive device to be coupled to the described source electrode of described third transistor.
18. current amplifiers as claimed in claim 12 are it is characterised in that also include:
5th transistor, the 5th transistor includes: drain electrode, is offset to the grid of bias voltage, and is coupled to described first
The source electrode of the described drain electrode of transistor；And
6th transistor, the 6th transistor includes: drain electrode, is offset to the grid of described bias voltage, and is coupled to described
The source electrode of the described drain electrode of third transistor；
Wherein, described voltage level shifting unit is coupled to the described drain electrode of described 5th transistor, to be coupled to described
The described drain electrode of one transistor；And
Described voltage level shifting unit is coupled to the described drain electrode of described 6th transistor, to be coupled to described 3rd crystal
The described drain electrode of pipe.
19. current amplifiers as claimed in claim 12 are it is characterised in that described voltage level shifting unit includes:
First resistor, this first resistor includes: is coupled to the first end of described grid of described transistor seconds and is used for exporting
Second end of described first voltage level；
Second resistance, this second resistance includes: is coupled to the first end of described grid of described 4th transistor and is used for exporting
Second end of described second voltage level；
Common-mode voltage sensor, for obtaining the common-mode voltage between described first voltage level and described second voltage level；
Operational amplifier, for being compared described common-mode voltage with common-mode voltage reference, wherein, this operational amplifier includes
Outfan；
First trsanscondutance amplifier, this first trsanscondutance amplifier includes: be coupled to described operational amplifier described outfan defeated
The outfan entering end and being coupled to the described grid of described transistor seconds；And
Second trsanscondutance amplifier, this second trsanscondutance amplifier includes: be coupled to described operational amplifier described outfan defeated
The outfan entering end and being coupled to the described grid of described 4th transistor；
Wherein, described voltage level shifting unit be used for producing across described first resistor two ends the skew of described first voltage and
Described second voltage skew across described second resistance two ends.
20. current amplifiers as claimed in claim 12 are it is characterised in that voltage level shifting unit includes:
First resistor, this first resistor includes: is coupled to the first end of described grid of described transistor seconds and is used for exporting
Second end of described first voltage level；
Second resistance, this second resistance includes: is coupled to the first end of described grid of described 4th transistor and is used for exporting
Second end of described second voltage level；
Common-mode voltage sensor, for obtaining the common-mode voltage between described first voltage level and described second voltage level；
First trsanscondutance amplifier, for receiving described common-mode voltage and common-mode voltage reference, wherein, this first trsanscondutance amplifier bag
Include the outfan of the described grid being coupled to described transistor seconds；And
Second trsanscondutance amplifier, for receiving described common-mode voltage and common-mode voltage reference, wherein, this second trsanscondutance amplifier bag
Include the outfan of the described grid being coupled to described 4th transistor；
Wherein, described voltage level shifting unit be used for producing across described first resistor two ends the skew of described first voltage and
Described second voltage skew across described second resistance two ends.
21. current amplifiers as described in claim 19 or 20 are it is characterised in that described common-mode voltage sensor includes:
3rd resistor, this 3rd resistor includes the second end and is coupled to the first end of described first voltage level；And
4th resistance, the 4th resistance includes the second end and is coupled to the first end of described second voltage level；
Wherein, described second end of described 3rd resistor and described second end of described 4th resistance link together, to provide
Take from described first voltage level and the common-mode voltage of described second voltage level.
A kind of 22. transmitters are it is characterised in that include:
Current amplifier as any one of claim 12-21；And
Differential digital-analog converter, this differential digital-analog converter includes: is coupled to the described of described current amplifier
The positive output end of described grid of the first transistor and be coupled to described current amplifier described third transistor described grid
The negative output terminal of pole.
23. transmitters as claimed in claim 22 are it is characterised in that the institute of the described transistor seconds of described current amplifier
The described drain electrode stating described 4th transistor of drain electrode and described current amplifier is coupled to load impedance, for electric current-electricity
Pressure conversion.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562192154P | 2015-07-14 | 2015-07-14 | |
| US62/192,154 | 2015-07-14 | ||
| US14/962,560 US9716499B2 (en) | 2013-06-05 | 2015-12-08 | Current amplifier and transmitter using the same |
| US14/962,560 | 2015-12-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106357228A true CN106357228A (en) | 2017-01-25 |
| CN106357228B CN106357228B (en) | 2019-03-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610541511.3A Active CN106357228B (en) | 2015-07-14 | 2016-07-11 | Current amplifier and transmitter |
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| CN (1) | CN106357228B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060139100A1 (en) * | 2004-12-10 | 2006-06-29 | Taylor Stewart S | Amplifier and method for processing signals |
| US7863841B2 (en) * | 2007-06-15 | 2011-01-04 | Paolo Menegoli | Class H drive |
| CN104244138A (en) * | 2013-06-05 | 2014-12-24 | 联发科技股份有限公司 | Current amplifier and transmitter using the same |
| CN102354241B (en) * | 2011-07-29 | 2015-04-01 | 开曼群岛威睿电通股份有限公司 | Voltage/current conversion circuit |
-
2016
- 2016-07-11 CN CN201610541511.3A patent/CN106357228B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060139100A1 (en) * | 2004-12-10 | 2006-06-29 | Taylor Stewart S | Amplifier and method for processing signals |
| US7863841B2 (en) * | 2007-06-15 | 2011-01-04 | Paolo Menegoli | Class H drive |
| CN102354241B (en) * | 2011-07-29 | 2015-04-01 | 开曼群岛威睿电通股份有限公司 | Voltage/current conversion circuit |
| CN104244138A (en) * | 2013-06-05 | 2014-12-24 | 联发科技股份有限公司 | Current amplifier and transmitter using the same |
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| Publication number | Publication date |
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| CN106357228B (en) | 2019-03-29 |
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