CN106356287A - Preparation method for low-temperature polycrystalline silicon thin film and semiconductor structure - Google Patents
Preparation method for low-temperature polycrystalline silicon thin film and semiconductor structure Download PDFInfo
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- CN106356287A CN106356287A CN201610861310.1A CN201610861310A CN106356287A CN 106356287 A CN106356287 A CN 106356287A CN 201610861310 A CN201610861310 A CN 201610861310A CN 106356287 A CN106356287 A CN 106356287A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 238000005224 laser annealing Methods 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims description 55
- 239000012528 membrane Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000280 densification Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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Abstract
The invention provides a preparation method for a low-temperature polycrystalline silicon thin film and a semiconductor structure. The preparation method for the low-temperature polycrystalline silicon thin film comprises the following steps: providing a substrate; forming a transition layer on the substrate; forming a plurality of spaced functional regions in the transition layer, wherein the heat conducting performance of each function region is worse than that of the tradition layer around; forming an amorphous silicon thin film on the transition layer; crystallizing the amorphous silicon thin film by adopting an excimer laser annealing process to obtain the low-temperature polycrystalline silicon thin film. The spaced functional regions are formed in the transition layer, and the heat conducting performance of each function region is worse than that of the tradition layer around, so that various positions of the amorphous silicon thin film correspond to different cooling rates in the process of crystallizing the amorphous silicon thin film by adopting the excimer laser annealing process to obtain the low-temperature polycrystalline silicon thin film, and low-temperature polycrystalline silicon thin film crystal grains grow transversely; therefore, the uniformity of the formed low-temperature polycrystalline silicon thin film is improved.
Description
Technical field
The present invention relates to display fabrication techniques field, particularly to a kind of preparation method of low-temperature polysilicon film and half
Conductor structure.
Background technology
At present, adopt amorphous silicon film transistor and polysilicon membrane crystal conventional active type array liquid crystal display more
Pipe.Wherein, polycrystalline SiTFT (thin film transistor, abbreviation tft) is due to having higher electron transfer
Rate, aperture opening ratio be high, faster response speed, can significantly reduce size of components, high resolution, Driving Integrate Circuit can be made
The advantages of, it is more suitable for jumbo high frequency and shows, be conducive to improving the yield rate of display and reduce production cost, and obtain
To being widely applied.
Make low-temperature polysilicon film and commonly use quasi-molecule laser annealing method, the ultimate principle of the method is to utilize high-energy
Excimer laser irradiation to amorphous silicon membrane surface, make non-crystalline silicon melt, cooling, recrystallization, realize from non-crystalline silicon to polycrystalline
The transformation of silicon.The crystal grain of the low-temperature polysilicon film of quasi-molecule laser annealing method preparation is big, spatial selectivity is good, intracrystalline imperfection
Less, electrology characteristic is good, it has also become the main method of low-temperature polysilicon film preparation at present.
And in the prior art, the preparation of uniform low-temperature polysilicon film difficult to realize, meanwhile, low-temperature polysilicon film
The uniformity of crystal grain has a major impact to the electric property of low-temperature polysilicon film.Therefore, how to prepare uniform low temperature
Polysilicon membrane has become those skilled in the art's difficult problem urgently to be resolved hurrily.
Content of the invention
It is an object of the invention to provide a kind of preparation method of low-temperature polysilicon film and semiconductor structure, existing to solve
There is the inadequate problem of the uniformity of low-temperature polysilicon film in technology.
For solving above-mentioned technical problem, the present invention provides a kind of preparation method of low-temperature polysilicon film, and described low temperature is many
The preparation method of polycrystal silicon film includes:
Substrate is provided；
Form transition zone on the substrate；
Form multiple spaced apart functional areas in described transition zone, each functional areas transition zone heat conductivity more about
Can be poor；
Amorphous silicon membrane is formed on described transition zone；
Crystallization is carried out to described amorphous silicon membrane using quasi-molecule laser annealing technique, obtains low-temperature polysilicon film.
Optionally, in the preparation method of described low-temperature polysilicon film, each functional areas includes dense area and is located at
Cavity in described dense area, wherein, the material density of the material density of described dense area transition zone more about is high.
Optionally, in the preparation method of described low-temperature polysilicon film, multiple functional areas are uniformly distributed in described
In transition zone.
Optionally, in the preparation method of described low-temperature polysilicon film, each functional areas is spherical structure, each work(
A diameter of 200nm～400nm in energy area.
Optionally, in the preparation method of described low-temperature polysilicon film, the centre of sphere distance of two neighboring functional areas is 1
μm～5 μm.
Optionally, in the preparation method of described low-temperature polysilicon film, by the following method in described transition zone
Form multiple spaced apart functional areas:
By in laser focusing to described transition zone；
Form blast in described transition zone, obtain multiple functional areas.
Optionally, in the preparation method of described low-temperature polysilicon film, will wrap in laser focusing to described transition zone
Include:
In described transition zone overhead, lenticule is set；
Femtosecond laser is made to pass through described lenticule to described transition zone.
Optionally, in the preparation method of described low-temperature polysilicon film, described transition zone is silicon oxide layer；Described mistake
The thickness crossing layer is 400nm～600nm.
Optionally, in the preparation method of described low-temperature polysilicon film, before forming transition zone on the substrate,
The preparation method of described low-temperature polysilicon film also includes:
Form silicon nitride layer on the substrate；Wherein, described transition zone is located on described silicon nitride layer.
The present invention also provides the quasiconductor that a kind of preparation method using low-temperature polysilicon film as above is formed
Structure, described semiconductor structure includes: substrate；It is formed at the transition zone on described substrate；It is formed at many in described transition zone
Individual spaced apart functional areas, each functional areas transition zone heat conductivility more about is poor；And be formed on described transition zone
Low-temperature polysilicon film.
In the preparation method of the low-temperature polysilicon film that the present invention provides and semiconductor structure, it is formed with transition zone
Multiple spaced apart functional areas, each functional areas transition zone heat conductivility more about is poor, is thus moved back using excimer laser
Ignition technique carries out during crystallization obtains low-temperature polysilicon film to amorphous silicon membrane, described amorphous silicon membrane everywhere corresponding not
With cooldown rate, and then low-temperature polysilicon film crystal grain is laterally generated, thus just can improve formed low
The uniformity of warm polysilicon membrane.
Brief description
Fig. 1 is the schematic flow sheet of the preparation method of the low-temperature polysilicon film of the embodiment of the present invention；
Fig. 2～Fig. 7 is that the preparation method of the low-temperature polysilicon film using the embodiment of the present invention forms semiconductor structure
Structural profile schematic diagram formed in process.
Specific embodiment
And partly lead to the preparation method of low-temperature polysilicon film proposed by the present invention below in conjunction with the drawings and specific embodiments
Body structure is described in further detail.According to following explanation and claims, advantages and features of the invention will become apparent from.Need
Illustrate, accompanying drawing all in the form of very simplification and all using non-accurately ratio, only in order to convenience, lucidly say by auxiliary
The purpose of the bright embodiment of the present invention.
Refer to Fig. 1, it is the schematic flow sheet of the preparation method of low-temperature polysilicon film of the embodiment of the present invention.As figure
Shown in 1, the preparation method of described low-temperature polysilicon film includes:
Step s10: substrate is provided；
Step s11: form transition zone on the substrate；
Step s12: form multiple spaced apart functional areas, the transition more about of each functional areas in described transition zone
Layer heat conductivility is poor；
Step s13: amorphous silicon membrane is formed on described transition zone；
Step s14: crystallization is carried out to described amorphous silicon membrane using quasi-molecule laser annealing technique, obtains low temperature polycrystalline silicon
Thin film.
Specifically, incorporated by reference to reference to Fig. 2～Fig. 7, it is the preparation of the low-temperature polysilicon film using the embodiment of the present invention
The structural profile schematic diagram that method is formed during forming semiconductor structure.
First, as shown in Fig. 2 providing substrate 10.Preferably, described substrate 10 is glass substrate.
In the embodiment of the present application, then, silicon nitride layer 11 is formed on described substrate 10, as shown in Figure 3.By institute
Stating formation silicon nitride layer 11 on substrate 10 can provide a preferably film formation surface, thus after being easy to follow-up film forming and improving
The quality and reliability of continuous film forming.
Then, as shown in figure 4, transition zone 12 is formed on described silicon nitride layer 11.In the other embodiment of the application,
Described transition zone 12 can also be formed directly on described substrate 10, does not form silicon nitride between substrate 10 and transition zone 12
Layer.Preferably, the material of described transition zone 12 is silicon oxide.Silicon oxide is widely used in display fabrication techniques field, its
There is cheap price and higher stability, therefore can be used as the preferred materials of transition zone 12.
Further, the thickness of described transition zone 12 is 400nm～600nm.Thus, it is possible to be easy to subsequently in described transition
Form functional areas in layer 12.
Refer to Fig. 5, then, described transition zone 12 forms multiple spaced apart functional areas 13, each functional areas 13
Transition zone 12 heat conductivility more about is poor.Thus, subsequently using quasi-molecule laser annealing technique, amorphous silicon membrane is being entered
During row crystallization obtains low-temperature polysilicon film, described amorphous silicon membrane corresponds to different cooldown rates everywhere, and then makes
Obtain low-temperature polysilicon film crystal grain laterally to be generated, thus just can improve the uniform of formed low-temperature polysilicon film
Property.
In the embodiment of the present application, each functional areas 13 includes dense area and the cavity being located in described dense area, wherein,
The material density of the material density of described dense area transition zone 12 more about is high.Preferably, multiple functional areas 13 are uniform
It is distributed in described transition zone, that is, the interval pitch between two neighboring functional areas 13 is identical.Here, due to described functional areas 13
Cavity including dense area and in described dense area, thus it is unfavorable for heat conduction, that is, makes the heat conduction of described functional areas 13
The heat conductivility of performance transition zone 12 more about is poor.
In the embodiment of the present application, each functional areas 13 is spherical structure, a diameter of 200nm of each functional areas 13～
400nm.The centre of sphere distance of two neighboring functional areas 13 is 1 μm～5 μm, and that is, the interval pitch between two neighboring functional areas 13 is
1 μm～5 μm.
Specifically, described functional areas 13 are formed by following technique: laser 20 is focused in described transition zone 12；(high
Isothermal plasma produces shock wave) thus forming (micro-) blast in described transition zone 20, obtain multiple functional areas 13.Preferably
, lenticule 21 can be set in described transition zone 12 overhead；Then described laser 20 is made to pass through described lenticule 21, thus real
Now focus in described transition zone 12.Further, described laser 20 is femtosecond laser.Preferably, can be in described transition zone
12 overhead arrange the array of lenticule 21, i.e. multiple lenticulees 21 by ranks arrangement, realize laser such that it is able to convenient
20 focus in described transition zone 12.
Then, as shown in fig. 6, amorphous silicon membrane 14 is formed on described transition zone 12.Here, by existing routine work
Skill forms amorphous silicon membrane 14.
With continued reference to Fig. 6, then, crystalline substance is carried out to described amorphous silicon membrane 14 using quasi-molecule laser annealing technique (ela)
Change, that is, here carries out crystallization using existing common process to described amorphous silicon membrane 14.
Refer to Fig. 7, by quasi-molecule laser annealing technique (ela), described amorphous silicon membrane 14 is carried out after crystallization, just
Can get low-temperature polysilicon film 15.Described low-temperature polysilicon film 15 has preferably uniformity, simultaneously its also have larger
Crystal grain.Here, due to being formed with multiple spaced apart functional areas 13 in transition zone 12, each functional areas 13 is more about
Transition zone 12 heat conductivility is poor, and thus using quasi-molecule laser annealing technique, amorphous silicon membrane 14 being carried out with crystallization, to obtain low temperature many
During polycrystal silicon film 15, described amorphous silicon membrane 14 corresponds to different cooldown rates everywhere, and then makes low temperature polycrystalline silicon
Thin film 15 crystal grain is laterally generated, and thus just can improve the uniformity of formed low-temperature polysilicon film 15.
Semiconductor structure just be can get by above-mentioned technique, can be accordingly with reference to Fig. 7, described semiconductor structure includes: base
Plate 10；It is formed at the transition zone 12 on described substrate 10；It is formed at the multiple spaced apart functional areas 13 in described transition zone 12,
Each functional areas 13 transition zone 12 heat conductivility more about is poor；And the low temperature polycrystalline silicon that is formed on described transition zone 12 is thin
Film 15.
Further, each functional areas 13 includes dense area and the cavity being located in described dense area, wherein, described densification
The material density of the material density in area transition zone 12 more about is high.Multiple functional areas 13 are uniformly distributed in described transition zone
In 12.Preferably, each functional areas 13 is spherical structure, a diameter of 200nm～400nm of each functional areas 13；Two neighboring
The centre of sphere distance of functional areas 13 is 1 μm～5 μm.
Further, described transition zone 12 is silicon oxide layer.The thickness of described transition zone 12 is 400nm～600nm.Described
It is formed with silicon nitride layer 11 between substrate 10 and described transition zone 12.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (10)
1. a kind of preparation method of low-temperature polysilicon film is it is characterised in that the preparation method bag of described low-temperature polysilicon film
Include:
Substrate is provided；
Form transition zone on the substrate；
Form multiple spaced apart functional areas in described transition zone, each functional areas transition zone heat conductivility more about
Difference；
Amorphous silicon membrane is formed on described transition zone；
Crystallization is carried out to described amorphous silicon membrane using quasi-molecule laser annealing technique, obtains low-temperature polysilicon film.
2. the preparation method of low-temperature polysilicon film as claimed in claim 1 is it is characterised in that each functional areas includes densification
Area and the cavity being located in described dense area, wherein, the material density of described dense area is close compared with the material of transition zone about
Degree is high.
3. the preparation method of low-temperature polysilicon film as claimed in claim 2 is it is characterised in that multiple functional areas are uniformly divided
It is distributed in described transition zone.
4. the preparation method of low-temperature polysilicon film as claimed in claim 2 is it is characterised in that each functional areas is spherical junctions
Structure, a diameter of 200nm～400nm of each functional areas.
5. the preparation method of low-temperature polysilicon film as claimed in claim 4 is it is characterised in that the ball of two neighboring functional areas
Heart distance is 1 μm～5 μm.
6. the preparation method of the low-temperature polysilicon film as any one of Claims 1 to 5 is it is characterised in that pass through such as
Lower method forms multiple spaced apart functional areas in described transition zone:
By in laser focusing to described transition zone；
Form blast in described transition zone, obtain multiple functional areas.
7. the preparation method of low-temperature polysilicon film as claimed in claim 6 is it is characterised in that by laser focusing to described mistake
Cross layer to include:
In described transition zone overhead, lenticule is set；
Femtosecond laser is made to pass through described lenticule to described transition zone.
8. the preparation method of the low-temperature polysilicon film as any one of Claims 1 to 5 is it is characterised in that described mistake
Crossing layer is silicon oxide layer；The thickness of described transition zone is 400nm～600nm.
9. the preparation method of low-temperature polysilicon film as claimed in claim 8 was it is characterised in that formed on the substrate
Before crossing layer, the preparation method of described low-temperature polysilicon film also includes:
Form silicon nitride layer on the substrate；Wherein, described transition zone is located on described silicon nitride layer.
10. a kind of preparation method using the low-temperature polysilicon film as any one of claim 1～9 formed half
Conductor structure is it is characterised in that described semiconductor structure includes: substrate；It is formed at the transition zone on described substrate；It is formed at institute
State the multiple spaced apart functional areas in transition zone, each functional areas transition zone heat conductivility more about is poor；And be formed at
Low-temperature polysilicon film on described transition zone.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030155572A1 (en) * | 2002-02-19 | 2003-08-21 | Min-Koo Han | Thin film transistor and method for manufacturing thereof |
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN104966663A (en) * | 2015-05-22 | 2015-10-07 | 信利（惠州）智能显示有限公司 | LTPS film, preparation method thereof, and TFT |
| CN105957805A (en) * | 2016-06-29 | 2016-09-21 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor, array substrate and display device |
-
2016
- 2016-09-29 CN CN201610861310.1A patent/CN106356287B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030155572A1 (en) * | 2002-02-19 | 2003-08-21 | Min-Koo Han | Thin film transistor and method for manufacturing thereof |
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104392913A (en) * | 2014-10-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Quasi molecule laser annealing apparatus and preparation method of low-temperature polysilicon thin film |
| CN104966663A (en) * | 2015-05-22 | 2015-10-07 | 信利（惠州）智能显示有限公司 | LTPS film, preparation method thereof, and TFT |
| CN104907713A (en) * | 2015-06-03 | 2015-09-16 | 江苏大学 | Device and method for preparing spherical cavitation bubble |
| CN105957805A (en) * | 2016-06-29 | 2016-09-21 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor, array substrate and display device |
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