CN106350058A - Preparation method of nanoporous gold-based fluorescence enhanced base - Google Patents
Preparation method of nanoporous gold-based fluorescence enhanced base Download PDFInfo
- Publication number
- CN106350058A CN106350058A CN201610701397.6A CN201610701397A CN106350058A CN 106350058 A CN106350058 A CN 106350058A CN 201610701397 A CN201610701397 A CN 201610701397A CN 106350058 A CN106350058 A CN 106350058A
- Authority
- CN
- China
- Prior art keywords
- gold
- different
- thickness
- preparation
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention provides a preparation method of a nanoporous gold-based fluorescence enhanced base. The preparation method of the nanoporous gold-based fluorescence enhanced base comprises the following steps: placing a gold silver alloy film into concentrated nitric acid and performing corrosion to obtain a precursor I; placing a porous gold film of the precursor I into pure water and rinsing for many times to obtain a precursor II; and depositing a silicon dioxide film on the surface of the precursor II by a physical vapor deposition method to obtain the fluorescence enhanced base. Compared with the prior art, the preparation method of the nanoporous gold-based fluorescence enhanced base has the following beneficial effects that silicon dioxide modified nanoporous gold with different in pore diameter and different in thickness can be prepared by depositing the silicon dioxide films different in thickness on the surfaces of porous gold with different pore diameters by the physical vapor deposition method; and a base material can realize fluorescence enhancement on different fluorescent substances, the pore diameter of the porous gold and the thickness of the silicon dioxide on the surface, corresponding to the optimal enhancement, are different for different fluorescent substances, and the application field is widened.
Description
Technical field
The present invention relates to a kind of preparation method of the Fluorescence Increasing substrate based on nano-porous gold, belong to fluorescent material technology
Field.
Background technology
Fluorescent technique as a kind of important modern spectral technique, because the advantages of its sensitivity is high and method is various, extensively
General for various analysis and characterization processes.However, in real process, due to the particularity of sample, fluorescent technique is existing sensitive
Degree still can not meet all of mensure needs.Accordingly, it is desirable to be able to improve the sensitivity of fluoroscopic examination further so as to apply
Scope more expands.
Nano-porous gold is the nano-porous structure material of the noble metal gold that a class has special construction, in recent years due to it
Special structural behaviour and its noble metal characteristic are widely used in a lot of fields.The structure of nano-porous gold be by
Form in the golden space of nanoscale and ligament, there is the fundamental characteristics of noble metal gold material, there is loose structure gold simultaneously again
The special nature belonging to.With respect to other fine and close metal materials, nano-porous gold is a kind of nano-structured macroscopic material, its
Architectural feature is the nanovoids that inside has a large amount of connections, and the microscopic dimensions in its ligament and space are in nanoscale, just
It is that these construction featuress impart a lot of characteristic of this structure, as little in proportion, the big feature of specific surface area.Nano-porous gold is as one
Plant thin-film material, not only there is the characteristic of noble metal and porous material, also there is the metallic character of rough surface simultaneously, it has
Small-size effect as other nano materials, skin effect, quantum size effect, with macroscopic quantum effect etc., make this kind of
Material has special performance at aspects such as magnetic, light, electricity.
Traditional nano-porous gold is usually the base strengthening substrate or surface enhanced raman spectroscopy directly as surface fluorescence
Bottom, in the enhanced application of surface fluorescence, due to metal can lead to fluorescent quenching and fluorescence be a kind of across steric effect so that
The nano-porous gold modified is not had much to be limited as Fluorescence Increasing substrate.Current solution is at it using wet method
Superficial growth prepares the materials such as silicon dioxide or by controlling fluorescent probe molecule and substrate in its Surface coating serum albumin
The distance between, realize Fluorescence Increasing.However, the drawback that these methods exist is preparation method complexity, need by multiple
Miscellaneous step just can complete, process loaded down with trivial details and very difficult precise control isolation distance, simultaneously postscript its be easily destroyed porous gold structure
With thin-film material itself.It is therefore desirable to have a kind of new preparation method, can will not be too much during preparation porous gold
Destroy the performance of the structure of porous gold, the method for simple and fast can also be adopted accurately quickly to coat on its surface different simultaneously
The silica membrane of thickness, to meet the application under different condition, expands range of application.
Content of the invention
The shortcomings of for solving the preparation method complexity of existing Fluorescence Increasing substrate, strengthening scarce capacity, expand fluorescence inspection
The application surveyed, the invention provides a kind of new being capable of significantly Fluorescence Increasing substrate and its preparation method and application.
The preparation method of this new substrate is quick and simple, using the electrum ag that 100nm is thick65au35(gold silver
Component ratio be 35% and 65%) as template, the method removing alloy using chemical etching prepares nanoporous gold thin film,
Remove the silver element in alloy using nitric acid, remaining gold atom occurs to reset and assembles, and forms porous gold thin film.Then utilize
The method of physical vapour deposition (PVD) the surface of porous gold thin film silence one layer of different-thickness silica membrane, as space
Layer, thus realize Fluorescence Increasing.
The present invention is achieved by the following technical solutions:
The present invention provides a kind of preparation method of the Fluorescence Increasing substrate based on nano-porous gold, and it comprises the steps:
Electrum thin film is placed in concentrated nitric acid and is corroded, obtain presoma one；
Described presoma one is placed in pure water and is repeatedly rinsed, obtain presoma two；
Deposit silica membrane on the surface of described presoma two using physical vaporous deposition, obtain described fluorescence
Strengthen substrate.
Preferably, the thickness of described electrum thin film is 100nm.
Preferably, in described electrum thin film, the content of gold element and silver element is respectively 65% and 35%.
Preferably, the mass fraction of described concentrated nitric acid is not less than 65%.
Preferably, described pure water is deionized water or ultra-pure water.
Preferably, the technical parameter of described physical vaporous deposition is 200 DEG C of temperature, pressure 7*10-4Pa, evaporation
Speed 0.3nm/s, line 190ma, no ion source assist, no oxygenation capacity.
Using the electrum ag that 100nm is thick65au35As raw material, this alloy firm is changed in concentrated nitric acid
Learn corrosion.Because silver is more active than gold, can react, with silver, principle (the chemistry side that simultaneously not react with gold hence with concentrated nitric acid
Formula 1), using going the method for alloy by the silver element erosion removal in electrum, thus remaining gold atom is reset
And gathering, it is the formation of the nano-porous structure of this continuous insertion, wherein, the time reset and assemble is longer, the hole of formation
Size will be bigger, that is, the so-called response time is longer, aperture bigger (Fig. 6).Then, using the side of physical vapour deposition (PVD)
Method, the porous gold surface completing in preparation deposits the silica membrane of different-thickness, to meet fluorescence across sky as space layer
Between effect, realize surface fluorescence strengthen.
ag+2hno3(dense)=agno3+no2↑+h2o (1)
Fluorescence is across steric effect, and metal can lead to fluorescent quenching simultaneously, therefore, between fluorescence molecule and metallic substrates
Apart from very little when, can greatly lead to fluorescent quenching；When the distance of fluorescence molecule and metal substrate surface is 5～20nm's
When, the plasma resonance Fluorescence Increasing of metal surface can be more than the fluorescent quenching of metal surface, realizes Fluorescence Increasing.But
It is so far, to be that command range is come or by absorption in base superficial growth material as space layer using wet method mostly
Serum albumin carrys out command range and realizes Fluorescence Increasing, these methods all cannot precise control distance numerical value, also cannot know away from
From for how many whens, the amplitude of Fluorescence Increasing is maximum.In this regard, invention provides a kind of new method, by physics gas
The method mutually depositing, deposits the silicon dioxide of one layer of different-thickness on the porous gold thin film surface preparing, and as space layer, comes
Control fluorescence molecule the distance between metallic substrates.What this method was maximum be a little operating process simple and fast it is easy to
Control, and the thickness of the silicon dioxide depositing can be accurately controlled, and can be as accurate as 1nm, then just can be by controlling
The thickness of the silicon dioxide of deposition, finds the maximum thickness of Fluorescence Increasing, can expand answering of fluoroscopic examination using this advantage
Use scope.
Compared with prior art, the present invention has a following beneficial effect:
1st, pass through the silica membrane of different-thickness is deposited on the porous gold thin film of different pore size, substantially increase glimmering
Light intensification factor, with respect to alloy firm, the Fluorescence Increasing multiple that deposited the porous gold substrate of silicon dioxide can reach 230
Again (fluorescence molecule is r6g) and 160 times (fluorescent material is phycoerythrin).
2nd, pass through the silicon dioxide without thickness is deposited on the nano-porous gold of different pore size, it is possible to achieve to material list
The regulation (Fig. 7) of surface plasma resonance wavelength；
3rd, this base material can realize the Fluorescence Increasing to different fluorescent materials, and for different fluorescent materials,
The optimal golden aperture of corresponding porous that strengthens is different with the silicon dioxide thickness on surface, has widened application.
Brief description
The detailed description with reference to the following drawings, non-limiting example made by reading, the further feature of the present invention,
Objects and advantages will become more apparent upon:
Fig. 1 go the alloy reaction time be 24 little constantly, porous gold sem figure, aperture be 45nm；
Porous gold thin film sem of the silicon dioxide that Fig. 2 aperture is 42nm, surface deposits 10nm thickness is schemed；
Porous gold thin film tem of the silicon dioxide that Fig. 3 aperture is 42nm, surface deposits 10nm thickness is schemed；
Fig. 4 porous gold pore size is with the graph of relation going alloy time change；
Fig. 5 surface deposits the extinction spectra figure of the porous gold of different-thickness silicon dioxide；
Fig. 6 is ag65au35The substrate over-assemble r6g molecule of alloy firm and surface deposition different-thickness silicon dioxide
Fluorescence measurements；
Fig. 7 deposited the multiple aperture substrate of different-thickness silicon dioxide with respect to not depositing silicon dioxide for surface
The fluorescence of bare multiple aperture substrate over-assemble r6g molecule improves multiple.
Improve multiple by figure to can be seen that, with respect to the porous gold not depositing silicon dioxide, surface deposition is different
The fluorescence intensity of the r6g molecule of porous gold surface assembling of thickness silicon dioxide is significantly improved, wherein silicon dioxide
When thickness is 20nm, the multiple of raising is maximum, is 25 times.
Fig. 8 is ag65au35Alloy firm and the substrate over-assemble phycoerythrin of surface deposition different-thickness silicon dioxide
(r-pe) fluorescence measurements of molecule.
Figure a is ag65au35Alloy firm, the porous gold not depositing silicon dioxide and surface deposition different-thickness titanium dioxide
The porous gold surface of silicon assembles the fluorescence spectrum of the aperture substrate of fluorescence intensity maximum of phycoerythrin (r-pe) molecule.
Figure b is ag65au35Alloy firm, the porous gold not depositing silicon dioxide and surface deposition different-thickness titanium dioxide
The porous gold surface of silicon assembles the block diagram of the fluorescence intensity of phycoerythrin (r-pe) molecule.
Fig. 9 deposited the multiple aperture substrate of different-thickness silicon dioxide with respect to not depositing silicon dioxide for surface
The fluorescence of bare multiple aperture substrate over-assemble phycoerythrin (r-pe) molecule improves multiple；
Improve multiple by figure to can be seen that, with respect to the porous gold not depositing silicon dioxide, surface deposition is different
The fluorescence intensity of the phycoerythrin (r-pe) of porous gold surface assembling of thickness silicon dioxide is significantly improved, and wherein two
When silicon oxide thickness is 15nm, the multiple of raising is maximum, is 20 times.
Specific embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, some deformation can also be made and improve.These broadly fall into the present invention
Protection domain.
Embodiment 1
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid carry out corrode 24h；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses；
3) deposit the thick silicon dioxide of 5nm using the method for physical vapour deposition (PVD) in the porous gold surface preparing.
Alloy firm go the alloy reaction time be 24 little constantly, the surface topography of the porous of formation gold is as illustrated, hole
Footpath is 45nm.
Embodiment 2
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid that to be corroded to aperture be 42nm；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses；
3) the thick silicon dioxide of 10nm, dioxy are deposited using the method for physical vapour deposition (PVD) in the porous gold surface preparing
The thickness of SiClx is 10nm.
Aperture is 42nm, surface deposits the sem figure of the thick porous gold thin film of silicon dioxide of 10nm and tem schemes respectively as schemed
Shown in 2 and Fig. 3, the silicon dioxide thickness ratio of porous gold surface deposition is more uniform, and the thickness of actual deposition and theoretical value kissing
Close, error very little.
Embodiment 3
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid and corroded；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses；
3) deposit different-thickness using the method for physical vapour deposition (PVD) in the porous gold surface of the different pore size preparing
Silicon dioxide, the thickness of silicon dioxide is 15nm.
Embodiment 4
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid and corroded；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses；
3) deposit different-thickness using the method for physical vapour deposition (PVD) in the porous gold surface of the different pore size preparing
Silicon dioxide, the thickness of silicon dioxide is respectively 20nm.
Embodiment 5
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid and corroded；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses；
3) deposit different-thickness using the method for physical vapour deposition (PVD) in the porous gold surface of the different pore size preparing
Silicon dioxide, the thickness of silicon dioxide is respectively 25nm.
Porous gold pore size, goes to close as shown in figure 4, the time of reaction is longer with the relation curve going alloy time change
It is more abundant that gold reaction is carried out, and remaining silver is fewer, and the free built-up time of golden composition is longer, the chi of the loose structure being formed
Degree is bigger, and that is, the response time is longer, and aperture is bigger.
Comparative example 1
1) by 100nm thickness ag65au35Alloy firm be placed in 65% concentrated nitric acid and corroded；
2) the porous gold thin film obtaining corrosion is placed in pure water and repeatedly rinses, and does not carry out silica deposit.
Performance detection is tested
The thin film that Example 3 and comparative example 1 obtain respectively carries out delustring experiment, and result is as shown in figure 5, Fig. 5 a and Fig. 5 b
It is respectively the delustring experiment of comparative example 1 and embodiment 3.
Take embodiment 1～5 of the same area and the thin film of comparative example 1 preparation, being immersed in concentration respectively is 10-6The r6g of m
In aqueous solution, soak 2 hours, carry out chemisorbed, after its surface-assembled r6g molecule, take out, quickly clear in deionized water
Wash, wash the molecule of surface physics absorption off, then dry；By the use of the laser of the 532nm for 1mw for the power as exciting light, measure
The fluorescence spectrum of different samples；Comparison surface deposited the porous metallographic of the different pore size of different-thickness silicon dioxide for alloy
The Fluorescence Increasing multiple of thin film.
Alloy firm and surface deposit different-thickness silicon dioxide after assembling r6g molecule, the maximum sample of fluorescence intensity
As shown in Figure 6 a, Fig. 7 is with respect to alloy firm to the corresponding fluorescence spectrum of product, deposits the maximum fluorescence intensity pair under different-thickness
Answer the raising situation of the fluorescence intensity of porous gold substrate in aperture；Alloy firm and surface deposition different-thickness silicon dioxide are in group
After having filled r6g molecule, block diagram such as Fig. 6 b institute of the Insulin of the substrate of alloy firm and different pore size different-thickness
Show.
Change another fluorescent material phycoerythrin (r-pe), repeat above step, the wherein concentration of r-pe is
0.04mg/ml, soak time is 12 hours, other step all sames.
Alloy firm and surface deposit different-thickness silicon dioxide after assembling r-pe molecule, the maximum sample of fluorescence intensity
As shown in Figure 8 a, alloy firm and surface deposition different-thickness silicon dioxide are assembling r6g molecule to the corresponding fluorescence spectrum of product
Afterwards, the block diagram of the Insulin of the substrate of alloy firm and different pore size different-thickness is as shown in Figure 8 b.Fig. 9 is relatively
In alloy firm, deposit the raising feelings of the fluorescence intensity of porous gold substrate in the corresponding aperture of maximum fluorescence intensity under different-thickness
Condition, improves multiple by figure and can be seen that, and with respect to the porous gold not depositing silicon dioxide, surface deposits different-thickness two
The fluorescence intensity of the phycoerythrin (r-pe) of porous gold surface assembling of silicon oxide is significantly improved, wherein silicon dioxide
When thickness is 15nm, the multiple of raising is maximum, is 20 times.
Embodiment 6
1) by 100nm thickness ag75au25Alloy firm be placed in 60% concentrated nitric acid and corroded, corrode 8s respectively,
15s, 30s, 5min；
2) thin film having reacted different time is removed, be placed in pure water and repeatedly rinsed；
3) method utilizing physical vapour deposition (PVD), deposits the silicon dioxide of different-thickness in the porous gold surface of different pore size
Thin film, completes the preparation of Fluorescence Increasing substrate.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various modifications or modification within the scope of the claims, this not shadow
Ring the flesh and blood of the present invention.
Claims (6)
1. a kind of preparation method of the Fluorescence Increasing substrate based on nano-porous gold is it is characterised in that comprise the steps:
Electrum thin film is placed in concentrated nitric acid and is corroded, obtain presoma one；
Described presoma one is placed in pure water and is repeatedly rinsed, obtain presoma two；
Deposit silica membrane on the surface of described presoma two using physical vaporous deposition, obtain described fluorescence
Strengthen substrate.
2. the preparation method of the Fluorescence Increasing substrate based on nano-porous gold as claimed in claim 1 is it is characterised in that described
The thickness of electrum thin film is 100nm.
3. the Fluorescence Increasing substrate based on nano-porous gold as claimed in claim 1 or 2 preparation method it is characterised in that
In described electrum thin film, the content of gold element and silver element is respectively 65% and 35%.
4. the preparation method of the Fluorescence Increasing substrate based on nano-porous gold as claimed in claim 1 is it is characterised in that described
The mass fraction of concentrated nitric acid is not less than 65%.
5. the preparation method of the Fluorescence Increasing substrate based on nano-porous gold as claimed in claim 1 is it is characterised in that used
Pure water is deionized water or ultra-pure water.
6. the preparation method of the Fluorescence Increasing substrate based on nano-porous gold as claimed in claim 1 is it is characterised in that described
The technical parameter of physical vaporous deposition is 200 DEG C of temperature, pressure 7*10-4Pa, evaporation rate 0.3nm/s, line 190ma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610701397.6A CN106350058B (en) | 2016-08-22 | 2016-08-22 | The preparation method of fluorescence enhancement substrate based on nano-porous gold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610701397.6A CN106350058B (en) | 2016-08-22 | 2016-08-22 | The preparation method of fluorescence enhancement substrate based on nano-porous gold |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106350058A true CN106350058A (en) | 2017-01-25 |
| CN106350058B CN106350058B (en) | 2019-01-22 |
Family
ID=57844386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610701397.6A Active CN106350058B (en) | 2016-08-22 | 2016-08-22 | The preparation method of fluorescence enhancement substrate based on nano-porous gold |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106350058B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109557042A (en) * | 2018-11-26 | 2019-04-02 | 广东朗研科技有限公司 | Terahertz Enhancement Method and system based on semiconductor plating porous metal film structure |
| CN111139062A (en) * | 2020-01-07 | 2020-05-12 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
| CN113444520A (en) * | 2021-06-25 | 2021-09-28 | 佛山安亿纳米材料有限公司 | Sulfide phosphor with coating layer and magnetron sputtering method for preparing sulfide phosphor with coating layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101535526A (en) * | 2006-10-17 | 2009-09-16 | 罗伯特.博世有限公司 | Method for stabilizing and functionalizing porous metallic layers |
| CN103376244A (en) * | 2012-04-18 | 2013-10-30 | 中国科学院电子学研究所 | Surface plasma resonance chip and sensor applying same |
-
2016
- 2016-08-22 CN CN201610701397.6A patent/CN106350058B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101535526A (en) * | 2006-10-17 | 2009-09-16 | 罗伯特.博世有限公司 | Method for stabilizing and functionalizing porous metallic layers |
| CN103376244A (en) * | 2012-04-18 | 2013-10-30 | 中国科学院电子学研究所 | Surface plasma resonance chip and sensor applying same |
Non-Patent Citations (2)
| Title |
|---|
| JULIE S. BITEEN ET AL.: "Enhanced Radiative Emission Rate and Quantum Efficiency in Coupled Silicon Nanocrystal-Nanostructured Gold Emitters", 《NANO LETT.》 * |
| 张喆等: "纳米多孔金薄膜的表面等离子体共振传感特性", 《物理化学学报》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109557042A (en) * | 2018-11-26 | 2019-04-02 | 广东朗研科技有限公司 | Terahertz Enhancement Method and system based on semiconductor plating porous metal film structure |
| CN109557042B (en) * | 2018-11-26 | 2021-10-08 | 广东朗研科技有限公司 | Nano-mesoporous metal film plating structure based on semiconductor and terahertz wave enhancement system |
| CN111139062A (en) * | 2020-01-07 | 2020-05-12 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
| CN111139062B (en) * | 2020-01-07 | 2022-11-22 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
| CN113444520A (en) * | 2021-06-25 | 2021-09-28 | 佛山安亿纳米材料有限公司 | Sulfide phosphor with coating layer and magnetron sputtering method for preparing sulfide phosphor with coating layer |
| CN113444520B (en) * | 2021-06-25 | 2022-03-25 | 佛山安亿纳米材料有限公司 | Sulfide phosphor with coating layer and magnetron sputtering method for preparing sulfide phosphor with coating layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106350058B (en) | 2019-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104746049B (en) | The method that the surface enhanced Raman scattering substrate in metal nano gap is prepared using ALD | |
| Masuda et al. | Deposition mechanism of anatase TiO2 on self-assembled monolayers from an aqueous solution | |
| CN1312034C (en) | Process for preparing monocrystalline silicon nano line array with single axial arranging | |
| CN104949957A (en) | Embedded type nano dot array surface enhanced Raman active substrate and preparation method thereof | |
| CN102621128A (en) | Preparation method of large-area sequential controllable surface-enhanced Raman active substrate | |
| CN107543813A (en) | A kind of preparation method and applications of surface-enhanced Raman ordered composite array chip | |
| CN102590179A (en) | Silver nano lattice surface enhanced raman active substrate and preparation method thereof | |
| CN103938158A (en) | SERS (Surface Enhanced Raman Scattering) substrate with self-assembled spherical array and preparation method thereof | |
| CN106350058A (en) | Preparation method of nanoporous gold-based fluorescence enhanced base | |
| CN103774088B (en) | A kind of SERS probe molecule is from collecting micro-pipe and its preparation method and application | |
| CN107937957A (en) | The preparation method of surface enhanced Raman substrate and the substrate are used to detect animal virus | |
| CN108456848B (en) | Ag/FeS layered composite SERS substrate and preparation method thereof | |
| CN103213938B (en) | Gold nano cap array surface strengthens Raman active substrate and preparation method thereof | |
| CN103668140B (en) | A kind of preparation method of micro-nano dendritic silver super-hydrophilic film and the application of surface-enhanced Raman substrate | |
| CN108611604B (en) | Manufacturing method of economical high-precision surface enhanced Raman active substrate based on high dielectric material | |
| JP2017020944A (en) | Method for producing carbon microelectrode | |
| CN103364390A (en) | Surface-enhanced Raman substrate, preparation method and application thereof | |
| Sayed et al. | Characterization of the interface of gold and silver nanostructures on InP and GaAs synthesized via galvanic displacement | |
| CN106645077B (en) | The preparation method of SERS active-substrate of the spot size less than 5nm | |
| CN108823541B (en) | Preparation method of surface-enhanced Raman scattering active substrate | |
| CN108693166B (en) | Method for manufacturing surface enhanced Raman scattering substrate based on aluminum nitride nanostructure | |
| CN113433110B (en) | Preparation method for generating substrate with honeysuckle dendritic crystal flower-like nano structure by in-situ substitution method | |
| CN108362678A (en) | A method of utilizing hollow Ag-Au alloys composite construction micro-nano array detection melamine | |
| CN114012103A (en) | Method for preparing silver nanoparticles with controllable size on silicon surface | |
| CN103305890A (en) | Preparation method of three-dimensional penetrating anode aluminum oxide template |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180508 Address after: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant after: Shanghai Langyan Optoelectronics Technology Co.,Ltd. Applicant after: East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant before: Shanghai Langyan Optoelectronics Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210811 Address after: Room 4001, building 21, No. 123, Lane 1165, Jindu Road, Minhang District, Shanghai 201100 Patentee after: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Chongqing Research Institute of East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Patentee before: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: EAST CHINA NORMAL University |