A kind of organic photoelectrical material and the organic electroluminescence device comprising this material
Technical field
The present invention relates to material science, more specifically it relates to a kind of organic photoelectrical material and comprise this material
Organic electroluminescence device.
Background technology
Organic electroluminescent diode (oled) results from the eighties in last century, and organic light emitting diode (oled) has certainly
Luminous, wide viewing angle, fast response time, many advantages, such as can achieve Flexible Displays, through the development of more than two decades, this technology by
Step moves to maturity, at present, organic electroluminescent technology, be mainly used in two fields, respectively full-color display and white light
Illumination, based on the commodity of oled Display Technique, has been done step-by-step industrialization, such as, in commodity such as smart mobile phone, curved surface TVs
In, applied this technology widely.
In order to realize full-color display, it is respectively necessary for the luminescent device of three kinds of colors of red, green, blue, with red device and green glow
Device is compared, and blue luminescent device is still not mature enough, and device lifetime and efficiency are low.People pass through ultra clean technology, encapsulate skill
Art, exploitation has blue light material of high glass-transition temperature etc. to improve the life-span of blue-light device, and doping techniques and exploitation
There is the new material of the two poles of the earth structure, be then the direction improving device efficiency.
Doping techniques are by luminescent material (guest materials) being dispersed among other materials (material of main part), to reduce
The concentration of luminescent material, thus avoiding intermolecular aggregation and concentration quenching, and then realizing improving device efficiency, improving electroluminescent
Excitation, extends the purpose of device lifetime.
Content of the invention
For solving above technical problem, the invention provides a kind of organic photoelectrical material, its centered on anthraquinone ring, and
2 of described anthraquinone ring and 6 introducing aryl, shown in the general structure such as formula (i) of described organic photoelectrical material:
Wherein, ar1And ar2It independently is the aryl containing substituent group or without substituent group.
Preferably, described ar1And ar2Molecular weight independently between 60-500.
Preferably, described ar1And ar2Independently selected from the phenyl containing substituent group or without substituent group, naphthyl, phenanthryl, anthracene
Base, fluoranthene base, fluorenyl, pyrenyl, triphenylenyl, dibenzofuran group, dibenzothiophenes base, carbazyl, n- substituted carbazole base.
Preferably, the structural formula of described organic photoelectrical material is:
Present invention also offers a kind of preparation method of above-mentioned organic photoelectrical material, comprise the following steps:
1) based on 2,6- dibromo-anthraquinone, synthetic intermediate 1, reaction equation is as follows:
2) synthesize compound 1 with described intermediate 1, reaction equation is as follows:
3) with described compound 1 as raw material, the aromatic compounds replacing with boronate carry out pitching coupling reaction, obtain described
Luminous organic material.
Present invention also offers a kind of organic electroluminescence device, it includes luminescent layer, and described luminescent layer is by above-mentioned luminous
Material and bep composition.
Preferably, described luminescent material and the mass ratio of described bep are 9:1.
Preferably, described organic electroluminescence device is passed by ito Conducting Glass, hole transmission layer, luminescent layer, electronics
Defeated layer, electron injecting layer and cathode layer stack gradually and form.Wherein, hole transmission layer is made up of npb, and electron transfer layer is by tpbi
Make, electron injecting layer is made up of lithium fluoride, cathode layer is made of aluminum.
Brief description
Fig. 1 is the Rotating fields schematic diagram of the electroluminescent device of the present invention.
101st, ito Conducting Glass, 102, hole transmission layer, 103, luminescent layer, 104, electron transfer layer, 105, electronics
Implanted layer, 106 cathode layers.
Specific embodiment
Below in conjunction with accompanying drawing and example, the principle of the present invention and feature are described, example is served only for explaining this
Bright, it is not intended to limit the scope of the present invention.
COMPOUNDS EXAMPLE
1. the preparation of compound 1:
1) prepare intermediate 1
Addition 2,6- dibromo-anthraquinone (73.2g, 0.20mol) in 1l there-necked flask, ethylene glycol (14.9g, 0.24mol),
2.5g p-methyl benzenesulfonic acid, 400ml dimethylbenzene, it is heated to reflux, fraction water device water-dividing flows back 12 hours.After reaction terminates, wash, divide
Liquid, organic faciess removed under reduced pressure solvent, column chromatography, toluene pet ether recrystallization, obtain white solid intermediate 1, hplc purity
99.6%, yield 68.63%, ms (m/s): 407.9.
2) prepare compound 1
The preparation of intermediate 2: in the 1l there-necked flask being furnished with constant pressure funnel, addition magnesium metal (5.1g,
0.21mol), bromobenzene (31.4g, 0.20mol) is dissolved in 200g oxolane, is placed in constant pressure funnel, use
Nitrogen is protected, and heating there-necked flask reaches 65 DEG C to temperature in bottle, adds the oxolane to bromo-iodobenzene by constant pressure funnel
Solution, is firstly added 50ml, after question response causes, slowly instills remainder, 1h completion of dropping, reacts 2h under reflux temperature,
It is transferred to stand-by in constant pressure funnel after being down to room temperature.Intermediate 1 (82.0g, 0.20mol) is dissolved among 200g oxolane
It is added in 2l there-necked flask, is then slowly added dropwise above-mentioned stand-by solution, react 3h under reflux temperature, after reaction terminates, be cooled to 25
DEG C, above reactant liquor is slowly poured in the dilute hydrochloric acid that 200g mass concentration is 10%, stirs 15min, point liquid, collect organic
Phase, solvent is sloughed in decompression, obtains thick liquid, is not refined, and is directly used in next step reaction.
Add 250g benzene in above-mentioned gained thick liquid, stirring is lower to add 1.42g (0.01mol) boron trifluoride diethyl etherate molten
Liquid, 60~65 DEG C of reaction 4h, reaction, removed under reduced pressure solvent are quenched, column chromatography obtains intermediate 2, hplc purity 99.6%, yield
45.88%, ms (m/s): 546.0.
The preparation of intermediate 3: collect above intermediate 2 (54.8g, 0.1mol), add 250ml toluene and 50ml 85%
Formic acid, be warming up to backflow, insulation reaction 10 hours.Divide liquid, washing, organic faciess removed under reduced pressure solvent, column chromatography, obtain white
Solid is intermediate 3, hplc purity 99.6%, yield 85.22%, ms (m/s): 502.0.
The preparation of compound 1: in 1l there-necked flask, under nitrogen protection, add intermediate 3 (40.3g, 0.08mol), the third two
Nitrile (6.6g, 0.10mol), 500ml anhydrous methylene chloride, ice bath is cooled to interior temperature 0-5 DEG C, slowly instills 22ml (0.20mol)
Titanium tetrachloride, about 0.5 hour completion of dropping, it is slowly dropped into 70ml pyridine, about 1.0 hours completion of dropping, completion of dropping removes ice
Bath, the lower room temperature 20-25 DEG C stirring reaction of nitrogen protection 24 hours.It is 10% that above reactant liquor is slowly poured into 300g mass concentration
Dilute hydrochloric acid in, stir 10min, point liquid, collect organic faciess, decompression is sloughed solvent, obtained yellow solid, after glacial acetic acid recrystallization
The yellow solid obtaining is compound 1, hplc purity 99.5%, yield 73.58%.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c29h16br2n2, theoretical value 549.9680, test value,
549.9683.Elementary analysiss (c29h16br2n2), theoretical value c:63.07, h:2.92, n:5.07, measured value c:63.08, h:
2.94, n:5.05.
The preparation of embodiment 1 compound c01
In 250ml there-necked flask, addition compound 1 (2.76g, 0.005mol), phenylboric acid (1.34g, 0.011mol),
k2co3(2.07g, 0.015mol), toluene (60ml), deionized water (20ml), n2Protection, adds pd (pph3)4(17 5mg), rises
Temperature, to flowing back, is reacted 10 hours, stops reacting, cooling, point liquid, 50ml deionization is washed 1 time, collects organic faciess, slough solvent, institute
Obtain crude product and use silica gel column chromatography purification, obtain object c01, hplc purity 99.8%, yield 84.55%.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c41h26n2, theoretical value 546.2096, test value
546.2092.Elementary analysiss (c41h26n2), theoretical value c:90.08, h:4.80, n:5.12, measured value c:90.05, h:4.82,
N:5.13.
The preparation of embodiment 2 compound c02
With embodiment 1, difference is using raw material 1- naphthalene boronic acids alternative embodiment 1 preparation method of compound c02
In phenylboric acid.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c49h30n2, theoretical value 646.2409, test value
646.2403.Elementary analysiss (c49h30n2), theoretical value c:90.99, h:4.68, n:4.33, measured value c:90.96, h:4.67,
N:4.37.
The preparation of embodiment 3 compound c04
With embodiment 1, difference is using raw material 4- biphenylboronic acid alternative embodiment the preparation method of compound c04
Phenylboric acid in 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c53h34n2, theoretical value 698.2722, test value
698.2726.Elementary analysiss (c53h34n2), theoretical value c:91.09, h:4.90, n:4.01, measured value c:91.11, h:4.88,
N:4.01.
The preparation of embodiment 4 compound c07
With embodiment 1, difference is using raw material 9- phenanthrene boric acid alternative embodiment 1 preparation method of compound c07
In phenylboric acid.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c57h34n2, theoretical value 746.2722, test value
746.2725.Elementary analysiss (c57h34n2), theoretical value c:91.66, h:4.59, n:3.75, measured value c:91.68, h:4.58,
N:3.74.
The preparation of embodiment 5 compound c08
With embodiment 1, difference is using raw material 9- anthracene boric acid alternative embodiment 1 preparation method of compound c08
In phenylboric acid.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c57h34n2, theoretical value 746.2722, test value
746.2728.Elementary analysiss (c57h34n2), theoretical value c:91.66, h:4.59, n:3.75, measured value c:91.67, h:4.57,
N:3.76.
The preparation of embodiment 6 compound c09
With embodiment 1, difference is to replace using raw material 10- phenylanthracene -9- boric acid the preparation method of compound c09
Phenylboric acid in embodiment 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c69h42n2, theoretical value 898.3348, test value
898.3345.Elementary analysiss (c69h42n2), theoretical value c:92.18, h:4.71, n:3.11, measured value c:92.16, h:4.73,
N:3.11.
The preparation of embodiment 7 compound c10
With embodiment 1, difference is to be replaced using raw material fluoranthene -3- boric acid and implements the preparation method of compound c10
Phenylboric acid in example 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c61h34n2, theoretical value 794.2722, test value
794.2723.Elementary analysiss (c61h34n2), theoretical value c:92.16, h:4.32, n:3.52, measured value c:92.14, h:4.33,
N:3.53.
The preparation of embodiment 8 compound c12
With embodiment 1, difference is using raw material 9,9- dimethyl fluorene -2- boric acid the preparation method of compound c12
Phenylboric acid in alternative embodiment 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c59h42n2, theoretical value 778.3348, test value
778.3345.Elementary analysiss (c59h42n2), theoretical value c:90.97, h:5.43, n:3.60, measured value c:90.94, h:5.41,
N:3.65.
The preparation of embodiment 9 compound c13
With embodiment 1, difference is using raw material pyrene -1- boric acid alternative embodiment 1 preparation method of compound c13
In phenylboric acid.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c61h38n2, theoretical value 798.3035, test value
798.3039.Elementary analysiss (c61h38n2), theoretical value c:91.70, h:4.79, n:3.51, measured value c:91.73, h:4.78,
N:3.49.
The preparation of embodiment 10 compound c14
With embodiment 1, difference is to replace in fact using raw material triphenylene -2- boric acid the preparation method of compound c14
Apply the phenylboric acid in example 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c65h38n2, theoretical value 846.3035, test value
846.3039.Elementary analysiss (c65h38n2), theoretical value c:92.17, h:4.52, n:3.31, measured value c:92.14, h:4.54,
N:3.32.
The preparation of embodiment 11 compound c17
With embodiment 1, difference is to replace using raw material dibenzofurans -4- boric acid the preparation method of compound c17
Change the phenylboric acid in embodiment 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c53h30n2o2, theoretical value 726.2307, test value
726.2310.Elementary analysiss (c53h30n2o2), theoretical value c:87.58, h:4.16, n:3.85, o:4.40, measured value c:
87.55, h:4.18, n:3.88, o:4.39.
The preparation of embodiment 12 compound c19
With embodiment 1, difference is to replace using raw material n- phenyl carbazole -3- boric acid the preparation method of compound c19
Change the phenylboric acid in embodiment 1.
High resolution mass spectrum, esi source, positive ion mode, molecular formula c65h40n4, theoretical value 876.3253, test value
876.3257.Elementary analysiss (c65h40n4), theoretical value c:89.01, h:4.60, n:6.39, measured value c:89.05, h:4.57,
N:6.38.
Device embodiments
The present invention chooses compound c02, compound c04, compound c07, compound c08, compound c09, compound
C10, compound c12, compound c13, compound c14, compound c17, compound c19 make organic electroluminescence device, by
This is prepared for the organic electroluminescence device of embodiment 13-23 respectively.
All embodiments all prepare blue organic electroluminescent device by the following method:
A) cleaning ito (tin indium oxide) glass substrate (101): deionized water, acetone, EtOH Sonicate cleaning ito respectively
Each 30 minutes of glass, is then processed 5 minutes in plasma cleaner;
B) in upper vacuum evaporation hole transmission layer (102) npb of anode ito glass substrate (101), thickness is 50nm;
C) on hole transmission layer npb, vacuum mixing evaporation as luminescent layer (103) one of above-claimed cpd and
The mass ratio 9:1 of bep, described compound and bep, thickness is 30nm;
D) on luminescent layer (103), as the tpbi of electron transfer layer (104), thickness is 30nm for vacuum evaporation;
E) on electric transmission (104) layer tpbi, vacuum evaporation electron injecting layer (105) lif, thickness is 1nm;
F) on electron injecting layer (105) lif, vacuum evaporation negative electrode (106) al, thickness is 100nm.
The structure of device is ito/npb (50nm)/described compound: bep=9:1, (w/w, 30nm)/tpbi (30nm)/
lif(1nm)/al(100nm).
All device embodiments of the present invention are identical with the processing technology of comparative example, and employed identical base
Panel material and electrode material, the thickness of electrode material is also consistent, except that the main body material to the luminescent layer in device
Material converts.The composition structure of each device is as shown in table 1.The test result of device is shown in Table 2.
Table 1 device architecture
Table 2 device detection result
The result of table 2 can be seen that compound of the present invention can apply and oled luminescent device make, and with compare
Example is compared, and either opens bright voltage or high-high brightness all obtains larger change than known oled material.Material of the present invention
There is in oled luminescent device good application effect, there is good industrialization prospect.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.