CN106342102B - The comprehensive ion implantation and deposition complex intensifying processing method in titanium alloy component surface - Google Patents
The comprehensive ion implantation and deposition complex intensifying processing method in titanium alloy component surfaceInfo
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- CN106342102B CN106342102B CN200610120943.3A CN200610120943A CN106342102B CN 106342102 B CN106342102 B CN 106342102B CN 200610120943 A CN200610120943 A CN 200610120943A CN 106342102 B CN106342102 B CN 106342102B
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Abstract
The invention discloses a kind of titanium alloy component surface plasma immersion ion implantation And deposition complex intensifying processing method, it relates to a kind of method of metal material surface plasma immersion ion implantation And deposition intensive treatment. It has solved between surface abrasion layer and titanium alloy component matrix that residual stress is large, adhesion and bearing capacity poor, the problem of easily peeling off from titanium alloy substrate. Synthetic method is carried out according to the following steps: the ultrasonic cleaning of (one) titanium alloy component; (2) titanium alloy component argon ion sputtering cleans; (3) gas ion injects; (4) PIII&D method depositing TiN; (5) PIII&D method depositing Ti (CN); (6) PIII&D method depositing Ti C; (7) synthetic diamond-like carbon film or MoS2 film, obtaining surface has the titanium alloy component of complex intensifying layer structure; Step (two) to (seven) carry out in vacuum chamber. The wear-out life of DLC in the present invention on complex intensifying layer improves more than 10 times than the individual layer DLC of same thickness, and coefficient of friction is lower than 0.1.
Description
Technical field
The present invention relates to a kind of side of metal material surface plasma immersion ion implantation And deposition intensive treatmentMethod.
Background technology
Titanium alloy specific strength is high, good corrosion resistance, under moderate temperature stable mechanical performance, extensiveFor fields such as space flight, aviation, chemical industry and biologic medicals. But the anti-wear performance of titanium alloy is poor, to stickyWearing and tearing and fretting wear very responsive, this has had a strong impact on the safety and reliability of titanium alloy component,And limit its application. Need to adopt a kind of surface strengthening technology reliably to realize titanium alloy component surfaceThe intensive treatment of resistance to wearing.
(be called plasma abroad soaks the plasma immersion ion implantation And deposition that late nineteen eighties grows upNing ion implantation and deposition, be called for short PIII&D) technology overcome the direct projection that traditional beamline ion implanters is injectedRestriction, is suitable for the batch process of complicated shape part, the dimensional accuracy of part is affected to little, modificationBetween layer and matrix, be combined, can obviously improve wearability and the contact fatigue of component surfaceThe advantages such as energy, and can realize parts batch processing. But, because titanium alloy substrate hardness is low, adoptIt is very limited that conventional PIII&D treatment technology improves its wear resistance strengthening effect.
The Tom Bell professor of Birmingham, GBR university has proposed composite table at eighties of last century late nineteen eightiesThe concept of face engineering, composite surface engineering refers to two or more existing sufacing system of applicationStandby surface texture layer, this surface texture layer has the composite performance that single surface reforming layer does not possess.By the cooperative effect of kinds of processes or technology can make workpiece material surface system technical indicator, canLean on the aspects such as property, life-span, quality and economy to obtain best effect, thereby overcome single surfaceThe limitation that technology exists.
PIII&D technology can realize that gas ion injects, metal ion injects, gas+metal ion is mixedClose technique compound arbitrarily of injection, metal film deposition, diamond-film-like deposition, Compound deposition.Therefore, adopt the PIII&D composite treatment technology of comprehensive kinds of processes to carry out intensive treatment titanium alloy component,Can overcome single PIII&D processing mode titanium alloy surface performance is improved to limited limitation, significantlyDegree improves the performances such as resistance to wearing of titanium alloy surface.
Summary of the invention
For the above-mentioned deficiency of prior art, technical problem to be solved by this invention is to overcome surface to resistBetween wearing layer and titanium alloy component matrix, large, the adhesion of residual stress and bearing capacity are poor, easily close from titaniumThe defect of peeling off on auri body and deficiency, the comprehensive Implantation in a kind of titanium alloy component surface providingWith deposition complex intensifying processing method.
In order to solve the problems of the technologies described above, the comprehensive implantation in titanium alloy component surface that the present invention proposesEnter and deposition complex intensifying processing method, comprise the steps:
(1) titanium alloy purity all >=carry out successively in 99.9% acetone and the solution of ethanol ultrasonic clearWash;
(2) titanium alloy carries out argon plasma sputter clean, and argon gas flow is 50-80sccm,Operating air pressure is 2.0 × 10-1-8.0×10-1Pa, bias voltage amplitude is 4-8kV, bias pulse width is 20-60 μ s, pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 20-30
min；
(3) titanium alloy is carried out to nitrogen or carbon ion injection, N, C plasma are 90%-99. by purity999% N2Or C2H2Produce, gas flow is 50-80sccm, and operating air pressure is 2.0 × 10-1-8.0
×10-1Pa, bias voltage amplitude is 20-40kV, and bias pulse width is 20-60 μ s, and pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 30-180min;
(4) PIII&D method depositing TiN sedimentary deposit: N plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(5) PIII&D method depositing Ti (CN) sedimentary deposit: C plasma and N plasma are by radio frequency sourceProduce, the titanium that Ti plasma is 90%-99.999% by purity is as the magnetic filtered pulse negative electrode of negative electrodeArc source produces, and operating air pressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias voltagePulse width is 20-60 μ s, and bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, mainArc voltage is 40-80V, and minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.
0-8.0h；
(6) PIII&D method depositing Ti C sedimentary deposit: C plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(7) synthetic diamond-like carbon film or MoS2Film, diamond-like carbon film is 90%-99.99 by purity9% graphite produces by negative electrode magnetic filtered pulse cathode arc source, and operating air pressure is 2.0 × 10-2-6.0
×10-2Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60 μ s, bias pulse frequencyBe all mutually 50-100Hz with minor arc pulse frequency, minor arc voltage is 40-80V, and minor arc pulsewidth is 1-2ms,Processing time is 1.0-10.0h; MoS2The MoS that film is 90%-99.999% by purity2Pass through radio frequency magnetronSputtering target produces; The argon gas that it is 90%-99.999% by purity that working gas adopts, gas flow is 50-100sccm, operating air pressure is 0.6-6.0Pa, and sputtering voltage amplitude is 300-800V, and the processing time is
1.0-10.0h；
Obtain surface by step () to step (seven) and have the titanium alloy of complex intensifying layer; ItsMiddle step (two) is carried out in vacuum chamber to step (seven), vacuum chamber base vacuum degree 1.0 × 10-4
-4.0×10-3Pa。
Complex intensifying layer of the present invention is from inside to outside successively by N/C ion implanted layer, TiN sedimentary deposit, TI (CN) sedimentary deposit, TiC sedimentary deposit and diamond-like carbon film/MoS2Film composition. Composition and property are formedGradient-structure on energy, has reduced outer DLC and the titanium alloy substrate difference in composition and performance,Thereby slowly-releasing residual stress, improved the adhesion of strengthening layer and titanium alloy substrate. Multiple in the present inventionClose the wear-out life under fully loaded transportation condition in strengthening layer than the direct formation of titanium alloy surface, same thicknessIndividual layer diamond-like carbon film improves more than 100 times, and coefficient of friction is lower than 0.15 (ball dish wear testExperimental condition: be Si to mill part material3N4, load is 100g, rotating speed is 200r/min). The present inventionTitanium alloy component surface adopts PIII&D Combined Processing can also obtain following effect: at contact stress be, the strengthening layer that PIII&D Combined Processing obtains grinds the number of turns and can reach 6 × 104 and turn when 500Mpa the left and rightAbove; When scarification and indentation method are measured strengthening layer adhesion, PIII&D Combined Processing obtains obtaining strengtheningLayer surface is all without obscission.
First the present invention carries out gas ion injection in titanium alloy-based surface, form TiN or TiC layer,Improve the adhesion of strengthening layer and titanium alloy substrate; Then deposited by PIII&D method, TiN, Ti (CN), TiC complex intensifying layer and outer field DLC formed the gradient-structure in composition and performance, reducedOuter DLC and the difference of titanium alloy substrate in composition and performance, thus slowly-releasing residual stress, carryThe adhesion of high strengthening layer and titanium alloy substrate. Complex intensifying layer has very strong bearing capacity, makesTitanium alloy substrate through intensive treatment still has good mar proof in the situation that of high-speed overloadEnergy.
The present invention has adopted plasma immersion ion to inject and deposition (Plasma Immersion IonImplantation and Deposition, PIII&D, or claim plasma immersion ion implantation And deposition) method,The method is directly pending workpiece to be immersed in plasma, then on workpiece, applies minor arc arteries and veinsPunching and bias pulse are realized the ion implantation and deposition intensive treatment of surface of the work; This technical method overcomesTraditional beamline ion implanters inject and the direct projection of Ion Beam Enhanced Deposit Technology limits, again due to high energy fromThe bombardment of son makes deposited rete have excellent compactness and adhesion. Adopt PIII&D methodCan obtain the strengthening layer with high-bond and excellent surface properties at complex-shaped piece surface,There is very strong bearing capacity, and can realize the batch process of part, have extensively in surface peening fieldGeneral application prospect.
Brief description of the drawings
Fig. 1 is the friction mill of sample after TC4 surface DLC monofilm and different surfaces complex intensifying are processedDamage results of property schematic diagram.
Fig. 2 is the cut pattern that scarification is measured individual layer DLC film A1 and multi-gradient film A4 adhesionFigure.
Fig. 3 is individual layer DLC film and multi-gradient mould trace shape appearance figure.
Fig. 4 is the friction and wear behavior of different-thickness multi-layer film structure after TC4 surface recombination reinforcing is processedSchematic diagram (load 100g).
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.
The embodiment of the present invention, for the processing of TC4 titanium alloy surface PIII&D complex intensifying, comprises following stepSuddenly, in table 1 and table 2, listed respectively for the processing of TC4 titanium alloy surface PIII&D complex intensifyingDifferent process and test parameters:
(1) titanium alloy purity all >=carry out successively in 99.9% acetone and the solution of ethanol ultrasonic clearWash;
(2) titanium alloy carries out argon plasma sputter clean, and argon gas flow is 50-80sccm,Operating air pressure is 2.0 × 10-1-8.0×10-1Pa, bias voltage amplitude is 4-8kV, bias pulse width is 20-60 μ s, pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 20-30
min；
(3) titanium alloy is carried out to nitrogen or carbon ion injection, N, C plasma are 90%-99. by purity999% N2Or C2H2Produce, gas flow is 50-80sccm, and operating air pressure is 2.0 × 10-1-8.0
×10-1Pa, bias voltage amplitude is 20-40kV, and bias pulse width is 20-60 μ s, and pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 30-180min;
(4) PIII&D method depositing TiN sedimentary deposit: N plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(5) PIII&D method depositing Ti (CN) sedimentary deposit: C plasma and N plasma are by radio frequency sourceProduce, the titanium that Ti plasma is 90%-99.999% by purity is as the magnetic filtered pulse negative electrode of negative electrodeArc source produces, and operating air pressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias voltagePulse width is 20-60 μ s, and bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, mainArc voltage is 40-80V, and minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.
0-8.0h；
(6) PIII&D method depositing Ti C sedimentary deposit: C plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(7) synthetic diamond-like carbon film or MoS2Film, diamond-like carbon film is 90%-99.99 by purity9% graphite produces by negative electrode magnetic filtered pulse cathode arc source, and operating air pressure is 2.0 × 10-2-6.0
×10-2Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60 μ s, bias pulse frequencyBe all mutually 50-100Hz with minor arc pulse frequency, minor arc voltage is 40-80V, and minor arc pulsewidth is 1-2ms,Processing time is 1.0-10.0h; MoS2The MoS that film is 90%-99.999% by purity2Pass through radio frequency magnetronSputtering target produces; The argon gas that it is 90%-99.999% by purity that working gas adopts, gas flow is 50-100sccm, operating air pressure is 0.6-6.0Pa, and sputtering voltage amplitude is 300-800V, and the processing time is1.0-10.0h; Obtaining surface has the titanium alloy of complex intensifying layer.
Step (two) is carried out in vacuum chamber to step (seven), vacuum chamber base vacuum degree 1.0 × 1
0-4-4.0×10-3Pa。
Table 1.TC4 titanium alloy surface PIII&D complex intensifying is processed test technology
Table 2.TC4 titanium alloy surface PIII&D complex intensifying is processed the test parameters of the various monofilms of test technology
Wherein outer field DLC rete is by adopting graphite to close as the magnetic filtered pulse cathode arc method of negative electrodeBecome, the DLC film that this method generates is also referred to as tetrahedral amorphous carbon (ta-C) film, due to hydrogen contentLess, there is higher hardness and chemical stability, be more suitable for as the anti abrasion layer in practical application.
As the TiN/TiCN/TiC rete of intermediate layer, gaseous plasma is by radio frequency source ionized nitrogenGas and acetylene gas produce, and Ti plasma is produced by magnetic filtered pulse cathode arc source, and plasma existsSpecimen surface reaction forms compound rete.
In test technology, by synthetic different transition zone+DLC outside deterioration layer structures on TC4, grindStudy carefully different gradient transitional lay structures and different transition region thickness to titanium alloy through complex intensifying processingThe impact of surface friction wear performance.
Friction and wear behavior test adopts ball dish friction wear testing machine, and friction condition is dry friction, rightAbrading-ball composition is Si3N4; The loading speed of scratch test is 50N/min, and maximum load is 100N.
Interpretation of result:
TC4 surface DLC monofilm and different surfaces complex intensifying are processed the friction and wear behavior knot of rear sampleFruit as shown in Figure 1. The DLC rete (A1) directly depositing on titanium alloy substrate as we can see from the figure,After hundreds of turns, coefficient of friction has just risen to 0.6, has substantially reached the coefficient of friction of matrix, and this showsThe DLC rete of surface deposition peels off substantially, and rete lost efficacy.
Figure 2 shows that the cut of scarification measurement individual layer DLC film A1 and multi-gradient film A4 adhesionPattern, in figure, can see monofilm in (a) after cut starts soon the rete in cut just occurSeparate completely, and under the effect of diamond point, also there is serious rete in cut both sidesPeeling phenomenon, illustrates that the bond strength of rete and matrix is very low; And there is multilayer for A4 in (b)The sample of intermediate layer, bond strength is greatly improved, even at the end cut of cutAlso only there is a small amount of peeling off in interior rete. Result by scratch test can illustrate, complex intensifyingProcess the bond strength that the multi-layer film structure forming can significantly improve rete and matrix.
Having carried out maximum load load for the multilayer film of DLC monofilm and complex intensifying processing is 5kgIndentation test, pressure head is spherical pressure, impression pattern as shown in Figure 3. From impression shape appearance figure (a)Can see, the impression of DLC monofilm has produced a large amount of radial cracks around, and has caused bulkThe globality of rete is peeled off. The part that in EDS electron probing analysis proof figure, rete exposes after peeling off is TC4 matrix material, illustrates in indentation test process and has germinated crackle and expanded at rete and basal body interface placeThe globality that exhibition has formed DLC rete to surface is peeled off; And process multi-layer film structure by complex intensifyingImpression shape appearance figure (b) can find out around impression, almost there is no the peeling phenomenon of rete, shows and DLC monofilm is compared, and complex intensifying is processed multi-layer film structure and had better bearing capacity.
For A4 sample, adopt the film layer structure of Ti6Al4V+TiN/TiCN/TiC+DLC,This structure has not only realized the gradient transition of composition from Ti to C, and also forms in mechanical performanceThe gradient transition of consistency and elasticity modulus, thereby reduced the residual stress that interface forms. AndUnder load, this gradient transition structure has also reduced the stress of interface to be concentrated, and better improvesThe bearing capacity of film matrix system, thereby multilayer transition layer structure has better than individual layer transition layer structureFriction and wear behavior.
In addition, the sample of A4 has lower friction system compared with other samples as can see from Figure 3Number, this is mainly that film matrix is the effect of bearing capacity, owing to having a better bearing capacity, ballIn dish process of friction and wear, reduce, to grinding surperficial contact area, to have reduced coefficient of friction.
For the intermediate layer of different-thickness, bearing capacity remains and determines the main of abrasion resistance propertiesFactor, the intermediate layer large due to thickness can provide better bearing capacity for film matrix system, because ofThis is not affecting under the prerequisite of bond strength, and the multi-layer film structure with thick intermediate layer has moreGood abrasion resistance properties and lower coefficient of friction, as shown in Figure 4.
Claims (7)
1. a titanium alloy component surface plasma immersion ion implantation And deposition complex intensifying processing method, itsBe characterised in that, comprise the steps:
(1) titanium alloy purity all >=carry out successively in 99.9% acetone and the solution of ethanol ultrasonic clearWash;
(2) titanium alloy carries out argon plasma sputter clean, and argon gas flow is 50-80sccm,Operating air pressure is 2.0 × 10-1-8.0×10-1Pa, bias voltage amplitude is 4-8kV, bias pulse width is 20-60 μ s, pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 20-30
min：
(3) titanium alloy is carried out to nitrogen or carbon ion injection, N, C plasma are 90%-99. by purity999% N2Or C2H2Produce, gas flow is 50-80sccm, and operating air pressure is 2.0 × 10-1-8.0
×10-1Pa, bias voltage amplitude is 20-40kV, and bias pulse width is 20-60 μ s, and pulse frequency is 50-100Hz, radio-frequency power 300-600W, the processing time is 30-180min;
(4) PIII&D method depositing TiN sedimentary deposit: N plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(5) PIII&D method depositing Ti (CN) sedimentary deposit: C plasma and N plasma are by radio frequency sourceProduce, the titanium that Ti plasma is 90%-99.999% by purity is as the magnetic filtered pulse negative electrode of negative electrodeArc source produces, and operating air pressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias voltagePulse width is 20-60 μ s, and bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, mainArc voltage is 40-80V, and minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.
0-8.0h；
(6) PIII&D method depositing Ti C sedimentary deposit: C plasma is produced by radio frequency source, Ti plasmaThe titanium that body is 90%-99.999% by purity produces as the magnetic filtered pulse cathode arc source of negative electrode, work gasPressure is 2.0 × 10-1-6.0×10-1Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60μ s, bias pulse frequency is all 50-100Hz mutually with minor arc pulse frequency, and minor arc voltage is 40-80V,Minor arc pulsewidth is 1-3ms, radio-frequency power 300-600W, and the processing time is 1.0-8.0h;
(7) synthetic diamond-like carbon film or MoS2Film, diamond-like carbon film is 90%-99.99 by purity9% graphite produces by negative electrode magnetic filtered pulse cathode arc source, and operating air pressure is 2.0 × 10-2-6.0
×10-2Pa, bias voltage amplitude is 10-20kV, bias pulse width is 20-60 μ s, bias pulse frequencyBe all mutually 50-100Hz with minor arc pulse frequency, minor arc voltage is 40-80V, and minor arc pulsewidth is 1-2ms,Processing time is 1.0-10.0h; MoS2The MoS that film is 90%-99.999% by purity2Pass through radio frequency magnetronSputtering target produces; The argon gas that it is 90%-99.999% by purity that working gas adopts, gas flow is 50-100sccm, operating air pressure is 0.6-6.0Pa, and sputtering voltage amplitude is 300-800V, and the processing time is
1.0-10.0h；
Obtain surface by step () to step (seven) and have the titanium alloy of complex intensifying layer; ItsMiddle step (two) is carried out in vacuum chamber to step (seven), vacuum chamber base vacuum degree 1.0 × 10-4
-4.0×10-3Pa。
2. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, in step (), the time of twice ultrasonic cleaning is 8-15
min。
3. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, step (two) to step (seven) is carried out in vacuum chamber,Vacuum chamber base vacuum degree 2.0 × 10-4-3.0×10-3Pa。
4. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, in step (four), operating air pressure is 3.0 × 10-1-5.0×10- 1Pa, bias voltage amplitude is 12-18kV, bias pulse width is 30-50 μ s, bias pulse frequency and masterArc pulse frequency is all 60-90Hz mutually, and minor arc voltage is 50-70V, and minor arc pulsewidth is 1.5-2.5ms,Radio-frequency power 400-500W, the processing time is 2.0-7.0h.
5. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, in step (five), operating air pressure is 3.0 × 10-1-5.0×10- 1Pa, bias voltage amplitude is 12-18kV, bias pulse width is 30-50 μ s, bias pulse frequency and masterArc pulse frequency is all 60-90Hz mutually, and minor arc voltage is 50-70V, and minor arc pulsewidth is 1.5-2.5ms,Radio-frequency power 400-500W, the processing time is 2.0-7.0h.
6. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, in step (six), operating air pressure is 3.0 × 10-1-5.0×10- 1Pa, bias voltage amplitude is 12-18kV, bias pulse width is 30-50 μ s, bias pulse frequency and masterArc pulse frequency is all 60-90Hz mutually, and minor arc voltage is 50-70V, and minor arc pulsewidth is 1.5-2.5ms,Radio-frequency power 400-500W, the processing time is 2.0-7.0h.
7. titanium alloy component according to claim 1 surface plasma immersion ion implantation And deposition is compoundEnhanced processing method, is characterized in that, in step (seven), operating air pressure is 3.0 × 10-2-5.0×10- 2Pa, bias voltage amplitude is 12-18kV, bias pulse width is 30-50 μ s, bias pulse frequency and masterArc pulse frequency is all 60-90Hz mutually, and minor arc voltage is 50-70V, and minor arc pulsewidth is 1.5-2ms, locatesThe reason time is 2.0-7.0h.
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| CN108950551A (en) * | 2018-08-07 | 2018-12-07 | 大连圣多教育咨询有限公司 | Medical titanium alloy surface recombination film and its preparation method and application |
| CN109306464A (en) * | 2018-09-11 | 2019-02-05 | 南京航空航天大学 | A kind of graded ceramics wear-resistant alloy layer of Ti/CrN composite construction and preparation method thereof |
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| CN114875367A (en) * | 2022-05-06 | 2022-08-09 | 哈尔滨工业大学 | Method for depositing thick tetrahedral amorphous carbon film by pulse cathode arc/workpiece bias pulse cooperative control |
| CN114875367B (en) * | 2022-05-06 | 2023-04-07 | 哈尔滨工业大学 | Method for depositing thick tetrahedral amorphous carbon film by pulse cathode arc/workpiece bias pulse cooperative control |
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