CN106340598A - Preparation method of OLED composite electrode material - Google Patents
Preparation method of OLED composite electrode material Download PDFInfo
- Publication number
- CN106340598A CN106340598A CN201610990035.3A CN201610990035A CN106340598A CN 106340598 A CN106340598 A CN 106340598A CN 201610990035 A CN201610990035 A CN 201610990035A CN 106340598 A CN106340598 A CN 106340598A
- Authority
- CN
- China
- Prior art keywords
- graphene
- film
- copper foil
- polymethyl methacrylate
- spin coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention aims at providing a preparation method of an OLED composite electrode material, so that the square resistance of the material can be lower than 100 ohm per square, and a work function of the material can meet the requirement for an anode work function of an organic photoelectric device.
Description
Technical field
The present invention relates to electrode technology field, more particularly, to a kind of preparation method of oled combination electrode material.
Background technology
In organic electro-optic device, such as oled, opv, its transparency electrode generally uses ito, because the conduction that ito has had
Property and translucency.But, the indium earth storage in ito material is the most limited, and ito bend resistance ability, fragile.Therefore, need badly
A kind of transparent electrode material that can substitute ito.
Graphene all receives much concern it is considered to be the only selection of ito can be substituted, because Graphene has all the time
Good flexibility, just can fully give play to the flexible speciality of organic material as flexible electrode, and in addition Graphene is one layer
Become the carbon atomic layer of cellular arrangement, the transmitance of therefore single-layer graphene can reach 97%, and the electrical conductivity of Graphene is high,
Work function suitable size, these are all the factors that Graphene can be used as transparency electrode.
At present, substantial amounts of article report has been had to prepare oled device using Graphene as transparency electrode.But, typically
The Graphene of cvd method synthesis, and need to be through transfer process due to existing defects, and this process also can be to the lattice quality of Graphene
Damage, the square resistance of the single-layer graphene of cvd method synthesis is typically larger than 500 ω/mouth, therefore directly replace ito to be used as
The square resistance of electrode graphite alkene is bigger than normal, in addition general power 4.3-4.7ev of the work function of Graphene, and this value is compared to through smelly
The work function (4.8-5.0ev) of the ito that oxygen was processed is also slightly less than normal.Therefore, intrinsic Graphene is not suitable for being directly used as oled
In anode material.For obtaining the oled of efficient Graphene electrodes, need by effective method, Graphene to be modified
To reduce its square resistance to 100 ω/below, regulation work function reaches organic electro-optic device and anode work function number is wanted
Ask.
Content of the invention
It is an object of the invention to proposing a kind of preparation method of oled combination electrode material, enable to its square resistance
To 100 ω/below, its work function reaches the requirement to anode work function number for the organic electro-optic device.
For reaching this purpose, the present invention employs the following technical solutions:
A kind of preparation method of oled combination electrode material, comprising:
(1) use chemical vapour deposition technique deposited graphite alkene on Copper Foil；
(2) there is the chlorobenzene solution of the polymethyl methacrylate of spin coating 2-5wt% on the Copper Foil of Graphene in described deposition；
(3) after chlorobenzene volatilization, the Copper Foil after described spin coating is soaked in ammonium persulfate solution, etches away Copper Foil, obtain
Polymethyl methacrylate film to graphene film attachment；
(4) polymethyl methacrylate film of described graphene film attachment is transferred to 100-500nm thickness sio2N
On type heavy doping silicon chip, clean removing polymethyl methacrylate film with acetone, graphene film is obtained on silicon chip；
(5) spin coating tiox solution in graphene membrane surface, anneal at 110-130 DEG C 10-30min；
(6) graphene film that spin coating is had tiox is positioned in ozone generator cavity, carries out ozone process and improves surface
Hydrophily；
(7) the pedot:pss aqueous solution is spin-coated on the graphene membrane surface of ozone process, anneal at 140-150 DEG C 20-
50min, obtains Graphene-tiox-pedot:pss combination electrode.
The method of the present invention is the proposition of process route for the contribution of prior art, for the optimization of process conditions,
Such as each content of material and ratio, those skilled in the art can be required according to prior art and concrete technology or effect is carried out really
Fixed, the present invention no longer optimizes with regard to it and repeats.
The Graphene compound electric of the Graphene-tiox-pedot:pss three-decker that preparation method of the present invention obtains
Pole, so that the square resistance of Graphene is from 628 former ω/, is reduced to 47 ω/, declines 96%.And in visible ray
In the range of still remain above 94% light transmission rate.The method not only makes the surface work function of electrode bring up to 5.42ev, and
Improve the surface topography of electrode, reduce the short circuit probability of device.Based on the oled device of graphene combination electrode, in photoelectricity
On transformation efficiency, the oled device with traditional it0 electrode is also to compare.
The oled combination electrode material that preparation method of the present invention obtains, enable to its square resistance to 100 ω/
Below, its work function reaches the requirement to anode work function number for the organic electro-optic device.
Specific embodiment
To further illustrate technical scheme below by specific embodiment.
Embodiment 1
A kind of preparation method of oled combination electrode material, comprising:
(1) use chemical vapour deposition technique deposited graphite alkene on Copper Foil；
(2) there is the chlorobenzene solution of the polymethyl methacrylate of spin coating 2wt% on the Copper Foil of Graphene in described deposition；
(3) after chlorobenzene volatilization, the Copper Foil after described spin coating is soaked in ammonium persulfate solution, etches away Copper Foil, obtain
Polymethyl methacrylate film to graphene film attachment；
(4) polymethyl methacrylate film of described graphene film attachment is transferred to 100nm thickness sio2N-shaped weight
In doped silicon wafer, clean removing polymethyl methacrylate film with acetone, graphene film is obtained on silicon chip；
(5) spin coating tiox solution in graphene membrane surface, anneal at 110 DEG C 10min；
(6) graphene film that spin coating is had tiox is positioned in ozone generator cavity, carries out ozone process and improves surface
Hydrophily；
(7) the pedot:pss aqueous solution is spin-coated on the graphene membrane surface of ozone process, anneal at 140 DEG C 20min,
Obtain Graphene-tiox-pedot:pss combination electrode.
Embodiment 2
A kind of preparation method of oled combination electrode material, comprising:
(1) use chemical vapour deposition technique deposited graphite alkene on Copper Foil；
(2) there is the chlorobenzene solution of the polymethyl methacrylate of spin coating 5wt% on the Copper Foil of Graphene in described deposition；
(3) after chlorobenzene volatilization, the Copper Foil after described spin coating is soaked in ammonium persulfate solution, etches away Copper Foil, obtain
Polymethyl methacrylate film to graphene film attachment；
(4) polymethyl methacrylate film of described graphene film attachment is transferred to 500nm thickness sio2N-shaped weight
In doped silicon wafer, clean removing polymethyl methacrylate film with acetone, graphene film is obtained on silicon chip；
(5) spin coating tiox solution in graphene membrane surface, anneal at 130 DEG C 30min；
(6) graphene film that spin coating is had tiox is positioned in ozone generator cavity, carries out ozone process and improves surface
Hydrophily；
(7) the pedot:pss aqueous solution is spin-coated on the graphene membrane surface of ozone process, anneal at 150 DEG C 50min,
Obtain Graphene-tiox-pedot:pss combination electrode.
Embodiment 3
A kind of preparation method of oled combination electrode material, comprising:
(1) use chemical vapour deposition technique deposited graphite alkene on Copper Foil；
(2) there is the chlorobenzene solution of the polymethyl methacrylate of spin coating 3wt% on the Copper Foil of Graphene in described deposition；
(3) after chlorobenzene volatilization, the Copper Foil after described spin coating is soaked in ammonium persulfate solution, etches away Copper Foil, obtain
Polymethyl methacrylate film to graphene film attachment；
(4) polymethyl methacrylate film of described graphene film attachment is transferred to 300nm thickness sio2N-shaped weight
In doped silicon wafer, clean removing polymethyl methacrylate film with acetone, graphene film is obtained on silicon chip；
(5) spin coating tiox solution in graphene membrane surface, anneal at 120 DEG C 20min；
(6) graphene film that spin coating is had tiox is positioned in ozone generator cavity, carries out ozone process and improves surface
Hydrophily；
(7) the pedot:pss aqueous solution is spin-coated on the graphene membrane surface of ozone process, anneal at 145 DEG C 30min,
Obtain Graphene-tiox-pedot:pss combination electrode.
The Graphene of the Graphene-tiox-pedot:pss three-decker that the preparation method described in embodiment 1-3 obtains is multiple
Composite electrode, so that the square resistance of Graphene is from 628 former ω/, is reduced to 47 ω/, declines 96%.And can
See the light transmission rate still remaining above 94% in optical range.The method not only makes the surface work function of electrode bring up to 5.42ev,
And improve the surface topography of electrode, reduce the short circuit probability of device.
Claims (1)
1. a kind of preparation method of oled combination electrode material, comprising:
(1) use chemical vapour deposition technique deposited graphite alkene on Copper Foil；
(2) there is the chlorobenzene solution of the polymethyl methacrylate of spin coating 2-5wt% on the Copper Foil of Graphene in described deposition；
(3) after chlorobenzene volatilization, the Copper Foil after described spin coating is soaked in ammonium persulfate solution, etches away Copper Foil, obtain stone
The polymethyl methacrylate film of black alkene film attachment；
(4) polymethyl methacrylate film of described graphene film attachment is transferred to 100-500nm thickness sio2N-shaped weight
In doped silicon wafer, clean removing polymethyl methacrylate film with acetone, graphene film is obtained on silicon chip；
(5) spin coating tiox solution in graphene membrane surface, anneal at 110-130 DEG C 10-30min；
(6) graphene film that spin coating is had tiox is positioned in ozone generator cavity, carries out ozone process and improves surface hydrophilic
Property；
(7) the pedot:pss aqueous solution is spin-coated on the graphene membrane surface of ozone process, anneal at 140-150 DEG C 20-
50min, obtains Graphene-tiox-pedot:pss combination electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610990035.3A CN106340598A (en) | 2016-11-10 | 2016-11-10 | Preparation method of OLED composite electrode material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610990035.3A CN106340598A (en) | 2016-11-10 | 2016-11-10 | Preparation method of OLED composite electrode material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106340598A true CN106340598A (en) | 2017-01-18 |
Family
ID=57841198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610990035.3A Pending CN106340598A (en) | 2016-11-10 | 2016-11-10 | Preparation method of OLED composite electrode material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106340598A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539059A (en) * | 2018-06-14 | 2018-09-14 | 北京蜃景光电科技有限公司 | A kind of preparation method, preparation system and application for novel OLED material |
| WO2019114560A1 (en) * | 2017-12-15 | 2019-06-20 | 京东方科技集团股份有限公司 | Substrate, display device, and manufacturing method for conductive thin film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568654A (en) * | 2010-12-13 | 2012-07-11 | 国家纳米科学中心 | Transparent conductive film and preparation method of transparent conductive film |
| CN103237754A (en) * | 2010-08-11 | 2013-08-07 | 宾夕法尼亚大学理事会 | Large-scale graphene sheet: articles, compositions, methods and devices incorporating same |
| CN103449418A (en) * | 2013-08-19 | 2013-12-18 | 中国科学院化学研究所 | Method for transferring graphene with atomic cleanness |
| CN104261402A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院宁波材料技术与工程研究所 | Graphene transfer method |
-
2016
- 2016-11-10 CN CN201610990035.3A patent/CN106340598A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103237754A (en) * | 2010-08-11 | 2013-08-07 | 宾夕法尼亚大学理事会 | Large-scale graphene sheet: articles, compositions, methods and devices incorporating same |
| CN102568654A (en) * | 2010-12-13 | 2012-07-11 | 国家纳米科学中心 | Transparent conductive film and preparation method of transparent conductive film |
| CN103449418A (en) * | 2013-08-19 | 2013-12-18 | 中国科学院化学研究所 | Method for transferring graphene with atomic cleanness |
| CN104261402A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院宁波材料技术与工程研究所 | Graphene transfer method |
Non-Patent Citations (1)
| Title |
|---|
| 韩媛媛: "基于石墨烯透明电极的高效有机发光二极管的研究", 《苏州大学硕士学位论文》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019114560A1 (en) * | 2017-12-15 | 2019-06-20 | 京东方科技集团股份有限公司 | Substrate, display device, and manufacturing method for conductive thin film |
| US10892417B2 (en) | 2017-12-15 | 2021-01-12 | Boe Technology Group Co., Ltd. | Substrate, display device, conductive film with dopant and method for fabricating the same |
| CN108539059A (en) * | 2018-06-14 | 2018-09-14 | 北京蜃景光电科技有限公司 | A kind of preparation method, preparation system and application for novel OLED material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun et al. | Transparent conductive oxide-free perovskite solar cells with PEDOT: PSS as transparent electrode | |
| JP6465795B2 (en) | Method for improving the electrical and / or optical performance of transparent conductor materials based on silver nanowires | |
| CN104091892B (en) | A kind of photoconductive organic semiconductor device based on Graphene electrodes | |
| Noh et al. | Cost-effective ITO-free organic solar cells with silver nanowire–PEDOT: PSS composite electrodes via a one-step spray deposition method | |
| Bao et al. | Facile preparation of TiO X film as an interface material for efficient inverted polymer solar cells | |
| Wang et al. | Smooth ZnO: Al-AgNWs composite electrode for flexible organic light-emitting device | |
| US11708499B2 (en) | Method of manufacturing highly conductive polymer thin film including plurality of conductive treatments | |
| CN104733614B (en) | Organic thin film solar cell based on two-layer hybrid active layer and preparation method thereof | |
| CN102881841B (en) | With the semiconductor photoelectric device that copper/graphene combination electrode is anode | |
| Kim et al. | Inverted organic photovoltaic device with a new electron transport layer | |
| CN105161622A (en) | Solar cell based on graphene transparent electrode | |
| Kang et al. | Fabrication of spray-coated semitransparent organic solar cells | |
| Yousefi et al. | Fabrication of flexible ITO-free OLED using vapor-treated PEDOT: PSS thin film as anode | |
| CN106340598A (en) | Preparation method of OLED composite electrode material | |
| Li et al. | Ternary organic solar cells based on ZnO-Ge double electron transport layer with enhanced power conversion efficiency | |
| CN106409667A (en) | Preparation method of patterning grapheme electrode | |
| Zhao et al. | Preparation of device-level ZnO-covered silver nanowires films and their applications as sub-electrode for polymer solar cells | |
| Qing et al. | MoO3/Ag/Al/ZnO intermediate layer for inverted tandem polymer solar cells | |
| Hu et al. | Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices. | |
| Yi et al. | Highly flexible and mechanically robust ultrathin Au grid as electrodes for flexible organic light-emitting devices | |
| Yang et al. | Enhanced performance in organic photovoltaic devices with a KMnO4 solution treated indium tin oxide anode modification | |
| Kim et al. | Hybrid transparent conductive films of multilayer graphene and metal grid for organic photovoltaics | |
| Mu et al. | Low driving voltage in an organic light-emitting diode using MoO3/NPB multiple quantum well structure in a hole transport layer | |
| CN107867682A (en) | A kind of the super acids dopant and doping method of efficiently doped graphene | |
| Deng et al. | ITO surface modification for inverted organic photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170118 |
|
| RJ01 | Rejection of invention patent application after publication |