CN106338882A - Extreme ultraviolet multilayer film and production method thereof - Google Patents
Extreme ultraviolet multilayer film and production method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000002070 nanowire Substances 0.000 claims description 4
- 230000011514 reflex Effects 0.000 claims description 2
- 238000000746 purification Methods 0.000 abstract description 9
- 230000000737 periodic effect Effects 0.000 abstract description 7
- 238000001228 spectrum Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004566 IR spectroscopy Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241001168730 Simo Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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Abstract
The invention relates to the field of extreme ultraviolet multilayer films, and concretely discloses an extreme ultraviolet multilayer film and a production method thereof. The extreme ultraviolet multilayer film sequentially comprises a substrate, a plurality of periodic Si/Mo layers, a zigzag array structure layer and an infrared reflecting layer. The extreme ultraviolet multilayer film can effectively realize light split of infrared lights and extreme ultraviolet lights in order to realize spectroscopic purification of an extreme ultraviolet light source.
Description
Technical field
The present invention relates to multiplayer films in EUV field, more particularly, to there is the extreme ultraviolet of infrared spectroscopy function
The design of multilayer film and preparation.
Background technology
In recent years, extreme ultraviolet photolithographic (euv lithograph, euvl) technology is widely developed.
Euvl is used 13.5nm wavelength light source as service band, is capable of more than ten nanometers, or even several receives
The lithographic line width of rice, and then the great integrated level increasing integrated circuit, to the miniaturization of electronic equipment,
Low-power consumption development is extremely important.
Extreme ultraviolet photolithographic equipment is typically made up of EUV light source, illuminator and projection objective.Wherein,
EUV light source provides the extreme ultraviolet radiation needed for photolithographic exposure.There is high-power and high-purity spectrum
EUV light source be the precondition realizing extreme ultraviolet photolithographic volume production, be also current extreme ultraviolet photolithographic skill
One of difficult point of art.
At present, extreme ultraviolet radiation can be produced by synchrotron radiation and high-temperature high-density plasma radiation.
In Practical Project, more had practical value based on the EUV light source of high-temperature high-density plasma radiation.
According to the different excitation principles of plasma, EUV light source can be divided into discharge plasma again
(discharge produced plasma, dpp) light source and laser plasma (laser produced
Plasma, lpp) light source two types.The former excites plasma using interelectrode electrion,
But because plasma distance electrode is nearer, inevitably hot injury is produced to electrode and fragment hits
Hit, limit the application of dpp light source.The latter excites plasma using driving laser bombardment target,
It is capable of high-power, stable extreme ultraviolet output, in recent years by extensive research and application.
The lpp light source being applied to extreme ultraviolet lithography is typically by driving light source, target system and collection system
Constitute.Wherein, drive light source general from the gas laser being capable of high-power output, such as co2
Laser instrument etc.；Target system is made up of target and target transmission mechanism, and common target has sn droplet target,
Xe gas target etc.；Collection system is to collect the extreme ultraviolet light beam that plasma resonance goes out, and is converged
To the device of intermediate focus (intermediate focus, if), generally use and be coated with extreme ultraviolet reflection
The ellipsoid of film is collected mirror to realize this function.Meanwhile, in order to reduce fragment, extreme ultraviolet photolithographic is set
The damage of standby middle illuminator, improves the spectral purity penetrating light, also can arrange in lpp light source and remove
Fragment system and spectrum purification system etc..In lpp light source, collect, through ellipsoid, the light bag that mirror is collected
Include extreme ultraviolet, DUV (deep ultraviolet, duv) and carry out the infrared of self-driven light source
Light (infrared, ir).Wherein, the heat effect that infrared light produces can cause reflecting mirror in optical system
Face deformation, strong influence image quality, meanwhile, the hot injury that infrared light causes also can significantly contract
The service life of short system.In this regard, research worker proposes multiple solutions.
2009, a kind of multiplayer films in EUV covering balzed grating, of Dutch fom laboratory design
Structure, is capable of the light splitting of infrared light and extreme ultraviolet, and then realizes the purification of light source light spectrum.
Content of the invention
It is contemplated that overcoming the defect of existing technology, in order to not affect mosi multilayer film to service band
(13.5nm) reduce the reflectance of infrared band while reflectance, the invention provides a kind of tool
There is the multiplayer films in EUV of infrared spectroscopy function.
For achieving the above object, the present invention employs the following technical solutions:
On the one hand, the invention provides a kind of multiplayer films in EUV, wherein, described multilayer film wraps successively
Include: substrate, the si/mo layer in multiple cycle, zigzag array structure layer and infrared reflecting layer.This
Bright proposing introduces zigzag array structure layer in mosi multilayer film upper surface, can be effectively realized red
Outer light and the light splitting of extreme ultraviolet, and then realize the spectrum purification of EUV light source.Euv and ir is many
Reflectance mechanism on tunic is different, and euv reflection is the superposition effect based on the reflection of periodic multilayer membrane interface
Really, ir reflection is the high reflectance to ir wave band based on metal (as mo).When multi-layer film surface is deposited
In one layer and the uneven infrared reflecting layer of multilamellar membrane interface, euv will reflect according to multilamellar membrane interface,
Ir will reflect according to infrared reflecting layer.For example, when infrared reflecting layer and multilamellar membrane interface have a degree
During angle (0 < a < 90), for equidirectional incident euv and ir, its reflected light will separate 2a degree.
In addition, constituting structure sheaf using si material, the absorption to euv for the surface structure can also be reduced.Thus,
The present invention proposes and introduces zigzag array structure layer in mosi multilayer film upper surface, realizes extreme ultraviolet
The spectrum purification in source.
Yet another aspect, present invention also offers a kind of preparation method of multiplayer films in EUV, including step
Rapid: s1, preparation substrate；S2, prepare the si/mo layer in multiple cycles on the substrate；S3,
Zigzag array structure layer is prepared on described si/mo layer；S4, on described zigzag array structure layer
Deposition infrared reflecting layer.
The beneficial effects of the present invention is: multiplayer films in EUV provided by the present invention can be effectively real
Existing infrared light and the light splitting of extreme ultraviolet, and then realize the spectrum purification of EUV light source.And, this
The impact inventing the reflectance to operation wavelength for the provided multiplayer films in EUV structure is less.
Brief description
Fig. 1 is the structural representation of the multiplayer films in EUV according to one embodiment of the invention.
Fig. 2 is the structure of the class triangular array of the multiplayer films in EUV according to one embodiment of the invention
Schematic diagram.
Fig. 3 is multiplayer films in EUV according to embodiments of the invention 1-7 and comparative example 1 in extreme ultraviolet ripple
The schematic diagram of the reflectance of section.
Fig. 4 is multiplayer films in EUV according to embodiments of the invention 1-7 and comparative example 1 to 10.6 μm
The schematic diagram of the reflectance of infrared light.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing
And specific embodiment, the present invention will be described in further detail.It should be appreciated that it is described herein
Specific embodiment is only in order to explain the present invention, and is not construed as limiting the invention.
On the one hand, as shown in accompanying drawing 1 of the present invention, multiplayer films in EUV provided by the present invention wraps successively
Include substrate 1, the si/mo layer 2 in multiple cycles, zigzag array structure layer 3 and infrared reflecting layer 4.
Si/mo layer 2 interface based on multiple cycles for the reflection of extreme ultraviolet, and the reflection of infrared light is based on red
The ultimate principle of outer reflective layer 4.When the si/mo layer 2 of infrared reflecting layer 4 and multiple cycles has folder
The light splitting of infrared light and extreme ultraviolet during angle, can be realized.So, the present invention proposed in multiple weeks
The si/mo layer upper surface of phase introduces zigzag array structure layer, can be effectively realized infrared light and pole
The light splitting of ultraviolet light, and then realize the spectrum purification of EUV light source；And, provided by the present invention
The impact of the reflectance to operation wavelength for the multiplayer films in EUV structure is less.Si/mo of the present invention
Dividing of si and mo out-of-order in layer, can be si/mo layer or mo/si layer, bi-material replaces heap
Folded.Preferably, the surface of si/mo layer multi-layer film of the present invention is mo, prepares thereon afterwards
Zigzag array structure layer.
In some embodiments, described substrate is silicon chip, fused quartz, devitrified glass, super-low expansion quartz
One or more of glass.Wherein, super-low expansion quartz glass, ule (ultra-low expansion),
I.e. ultra-low thermal expansion glass.
In some embodiments, described multilayer film has the si/mo layer in 40-50 cycle.Above-mentioned technology
In scheme, described periodic multilayer film is the periodic multilayer film having mo and si bi-material to constitute.
Specifically, the thickness of each cycle si/mo layer can be determined by operation wavelength and operating angle, preferably
6.5nm-7.3nm, more preferably 7nm.Described si/mo layer can be by magnetron sputtering or ion beamlet
The film plating process such as sputtering are realized.
In some embodiments, the thickness of the si/mo layer in each cycle is 6.5nm-7.3nm, and described every
The thickness of mo material described in the si/mo layer in individual cycle accounts for the 35%-45% of described si/mo thickness degree,
Further, the thickness of described mo material accounts for the 40% about of si/mo layer periodic thickness, i.e. γ-value
For 0.4 about.
In some embodiments, described zigzag array structure layer can for class triangular array structure and/or
Undulating array structure.Multiplayer films in EUV in one embodiment is shown according to Fig. 1 of the present invention
The structure of class triangular array.
In some embodiments, described zigzag array structure layer is zigzag oldered array structure or sawtooth
Shape disordered array structure.
In some embodiments, described zigzag oldered array structure by photoetching, glancing angle deposition technology,
Nano impression or diamond cutting cutting method are realized.Wherein, described oldered array structure also can pass through graze
Angle deposition technique is realized, but need to assist other technologies, such as pre- glove etc..
In some embodiments, described zigzag disordered array structure pass through photoetching, glancing angle deposition technology,
Nano impression or diamond cutting cutting method are realized.
In some embodiments, described zigzag array structure layer is made up of si material, described zigzag battle array
Array structure layer is 10 ° -80 ° with the angle at the inclination angle of described si/mo layer, and described zigzag array
The height of structure sheaf is 45nm-55nm.Further, the thickness of described zigzag array structure layer
Thickness is 50nm.Described zigzag array structure layer is formed on the surface of si/mo layer has homogeneous inclination
The inclined-plane array of angle, so that the multiplayer films in EUV of the present invention is capable of infrared light and extremely purple
The light splitting of outer light, and then realize the spectrum purification of EUV light source, and multiplayer films in EUV structure pair
The impact of the reflectance of operation wavelength is less.Zigzag array structure layer described above and described si/mo
The angular range at the inclination angle of layer can not only meet and can divide open infrared light with euv in certain distance,
And it is easy to operate.If the thickness thickness of zigzag array structure layer described above is more than 55nm,
Euv absorption loss water can be led to excessive；If being less than 45nm, microstructure unit density is big, and light splitting is imitated
Really relatively weak.Under thickness certain condition, inclination angle is larger, then zigzag cellular construction is too small, point
Cloth density is big, processes relative difficulty, and the reflectance of euv is affected big；Inclination angle is excessive, incident
Light is almost glancing incidence, or even negative incidence degree, infrared reflectance reduction.
In some embodiments, described infrared reflecting layer is by one or more of mo, ru, ti or zr
Composition, and the thickness of described outer red reflex layer is 4.5nm-5.5nm.Preferably, described infrared reflecting layer
It is made up of mo.Periodic multilayer film is the basis realizing euv reflection, but infrared light is had simultaneously
Stronger reflection, by the zigzag array structure layer micro structure on surface be capable of euv with infrared
Reflection direction is different.If being used ru as infrared reflecting layer, the multiplayer films in EUV that the present invention provides is also
There is certain oxidation resistance.
On the other hand, present invention also offers a kind of preparation method of multiplayer films in EUV, including step:
S1, preparation substrate；S2, prepare the si/mo in multiple cycles on the substrate using magnetron sputtering method
Layer；S3, on described si/mo layer prepare zigzag array structure layer；S4, utilize magnetron sputtering method
Infrared reflecting layer is deposited on described zigzag array structure layer.
Specifically, in an embodiment, the preparation method of multiplayer films in EUV of the present invention can be wrapped
Include step, step 1, preparation fused quartz substrate 1, roughness 0.2nm；Step 2, splashed using magnetic control
Penetrate preparation 40 period m o/si layers 2, cycle 7nm, γ-value 0.4；Step 3, utilize glancing angle deposition
Technology, the si nano wire having 30 ° of inclinations angle in multi-layer film surface deposition forms class triangular array knot
Structure 3, as shown in Figure 2；Step 4, deposited in class triangular array structure 3 using magnetron sputtering
Mo metal level, thickness 5nm.
In some embodiments, described step s3 includes deposition on described si/mo layer and has inclination angle
Silicon nanowires forms zigzag array structure layer.The concrete scope at above-mentioned inclination angle and concrete deposition operation
Relevant, for example, select glancing angle deposition method when being deposited, this inclination angle then with glancing angle deposition
When the glancing angle that uses relevant, further specifically, described step s3 may include in described si/mo
On layer, graze deposition has the silicon nanowires formation zigzag array structure layer at 30 ° of inclinations angle.
In some embodiments, described zigzag array structure layer can for class triangular array structure and/or
The angle at the inclination angle of undulating array structure, described zigzag array structure layer and described si/mo layer
For 10 ° -80 °, and the thickness thickness of described zigzag array structure layer is 45nm-55nm.
In some embodiments, described zigzag array structure layer is zigzag oldered array structure or sawtooth
Shape disordered array structure, described zigzag oldered array structure is by photoetching, nano impression or diamond cutting
Cutting method is realized, and described zigzag disordered array structure passes through photoetching, glancing angle deposition technology, nanometer
Impressing or diamond cutting cutting method are realized.
In some embodiments, described substrate is silicon chip, fused quartz, devitrified glass, super-low expansion quartz
One of glass, the thickness of described substrate is 100mm-300mm, and described step s1 also includes
The surface of described substrate is processed through design.Face shape for ensureing reflecting mirror does not change,
The thickness of described substrate is preferably 100mm-300mm；Or described substrate can be designed as plane mirror,
, in 10mm, the concrete thickness of substrate selects can in conjunction with actual application environment for substrate thickness.According to
, it is preferable that described substrate surface high frequency roughness is less than 0.2nm, it can for some embodiments of the present invention
Realized by methods such as mechanical polishing, ion beam polishing or magnetic fluid polishings.
Embodiment 1-7
There is the multiplayer films in EUV of infrared spectroscopy function, include substrate 1, Duo Gezhou from bottom to up successively
The si/mo layer 2 of phase, zigzag array structure layer 3 and infrared reflecting layer 4.Embodiment 1-7 adopts
Material and thickness are as shown in table 1.
Comparative example 1
A kind of comprise substrate, the multilayer film of multicycle simo layer, described substrate selects fused quartz, coarse
Spend for 0.2nm；The si/mo layer in the plurality of cycle was 50 cycles, and periodic thickness is 7nm, γ-value
For 0.4, the top layer of the si/mo layer in the plurality of cycle is si.
Table 1 is material and thickness in the multiplayer films in EUV of embodiment 1-7.
Table 1
Table 2 is the result of calculation of embodiment 1-7 and comparative example 1.
Table 2
Above with respect to the convention in the basis test of extreme ultraviolet reflectance, using 6 ° of angle of incidence,
I.e. incident illumination and multilayer film interface normal angular separation are 6 °.Described in table 2, spectrophotometric result refers to infrared light
The angle separated with extreme ultraviolet.Result of calculation such as table 2, Fig. 3-4 to embodiment 1-7 and comparative example 1
Shown.
By extremely purple designed by embodiment 1-3 visible laciniation layer height present invention in 50nm
Outer multilayer film has higher reflectance.Increase with laciniation layer height, multilayer film is to extreme ultraviolet
Reflectance be in oscillatory type decay, when laciniation layer height be 50nm when, of the present invention many
Tunic is of a relatively high to the reflectance of extreme ultraviolet.For thinner laciniation layer, multilayer film is to pole
The reflectance of ultraviolet can increased, but the requirement due to inclination angle, laciniation layer distribution density
Increase, the difficulty brought to processing also can increase.
By the inclination angle of embodiment 1,4 visible laciniation layers, spectrophotometric result is had a significant effect,
Inclination angle is too small, and spectrophotometric result is relatively weak；Inclination angle is excessive, and reflecting effect is relatively weak, but all
Achievable infrared spectroscopy effect.
Embodiment 1,6,7 is visible, the functional impact on multilayer film of infrared reflecting layer thickness, excessively thin
Infrared reflecting layer relatively low to infrared reflectance, blocked up infrared reflecting layer is to the reflectance of ultraviolet relatively
Low.
Periodicity mosi multilayer film introduces spectral absorption layer (or spectral absorption Rotating fields), can
Reduce the reflection to DUV for the multilayer film, improve the photoresist exposure problems being caused by DUV.
The present invention is to introduce the function that structure sheaf achieves infrared spectroscopy on periodicity mosi multilayer film.According to
Embodiment result is learnt, triangular array structure has clear and definite direction to the reflection of infrared light, permissible
The light splitting ability of structure is described by the spacing of infrared light at fixed range and extreme ultraviolet.The present invention
The multiplayer films in EUV being provided can be effectively realized the light splitting of infrared light and extreme ultraviolet, Jin Ershi
The spectrum purification of existing EUV light source.And, multiplayer films in EUV structure provided by the present invention is to work
The impact making the reflectance of wavelength is less.And the multiplayer films in EUV that comparative example 1 is provided do not possess red
Outer light splitting effect.
The specific embodiment of present invention described above, does not constitute limiting the scope of the present invention.
The done various other corresponding change of any technology according to the present invention design and deformation, all should wrap
Containing within the scope of the invention as claimed.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ",
The description of " specific example " or " some examples " etc. means the concrete spy with reference to this embodiment or example description
Levy, structure, material or feature are contained at least one embodiment or the example of the present invention.At this
In description, identical embodiment or example are not necessarily referring to the schematic representation of above-mentioned term.
And, the specific features of description, structure, material or feature can be in any one or more realities
Apply in example or example and combine in an appropriate manner.
Although embodiments of the invention have been shown and described above it is to be understood that above-mentioned reality
Applying example is exemplary it is impossible to be interpreted as limitation of the present invention, and those of ordinary skill in the art exists
Within the scope of the invention can be to above-described embodiment in the case of principle without departing from the present invention and objective
It is changed, changes, replacing and modification.
Claims (14)
1. a kind of multiplayer films in EUV is it is characterised in that described multilayer film includes successively: substrate, many
The si/mo layer in individual cycle, zigzag array structure layer and infrared reflecting layer.
2. multiplayer films in EUV according to claim 1 is it is characterised in that described substrate is silicon
One of piece, fused quartz, devitrified glass, super-low expansion quartz glass.
3. multiplayer films in EUV according to claim 1 is it is characterised in that described multilayer film has
There is the si/mo layer in 40-50 cycle.
4. multiplayer films in EUV according to claim 1 is it is characterised in that the si in each cycle
The thickness of/mo layer is 6.5nm-7.3nm, and mo material described in the si/mo layer in each cycle described
Thickness account for the 35%-45% of described si/mo thickness degree.
5. multiplayer films in EUV according to claim 1 is it is characterised in that described zigzag battle array
Array structure layer can be class triangular array structure and/or undulating array structure.
6. the multiplayer films in EUV according to any one of claim 1-5 it is characterised in that
Described zigzag array structure layer is zigzag oldered array structure or zigzag disordered array structure.
7. multiplayer films in EUV according to claim 6 is it is characterised in that described zigzag has
Sequence array structure can be realized by one or more of photoetching, nano impression or diamond cutting cutting method.
8. multiplayer films in EUV according to claim 6 it is characterised in that described zigzag no
Sequence array structure passes through in photoetching, Glancing angledeposition, nano impression or diamond cutting cutting method
Plant or multiple realization.
9. multiplayer films in EUV according to claim 1 is it is characterised in that described zigzag battle array
Array structure layer is made up of si material, the inclination angle of described zigzag array structure layer and described si/mo layer
Angle be 10 ° -80 °, and the thickness thickness of described zigzag array structure layer be 45nm-55nm.
10. multiplayer films in EUV according to claim 1 is it is characterised in that described infrared anti-
Penetrate layer to be made up of one or more of mo, ru, ti or zr, and the thickness of described outer red reflex layer
For 4.5nm-5.5nm.
A kind of 11. preparation methoies of multiplayer films in EUV are it is characterised in that include step:
S1 prepares substrate；
S2 prepares the si/mo layer in multiple cycles on the substrate；
S3 prepares zigzag array structure layer on described si/mo layer；
S4 deposits infrared reflecting layer on described zigzag array structure layer.
12. preparation methoies according to claim 11 it is characterised in that described step s2 and
Step s4 is all realized by magnetron sputtering method, and described step s3 includes preparation on described si/mo layer
The silicon nanowires with inclination angle forms zigzag array structure layer.
13. preparation methoies according to claim 10 are it is characterised in that described zigzag array
Structure sheaf can be class triangular array structure and/or undulating array structure, described zigzag array junctions
Structure layer is 10 ° -80 ° with the angle at the inclination angle of described si/mo layer, and described zigzag array structure
The height of layer is 45nm-55nm.
14. preparation methoies according to claim 11 are it is characterised in that described zigzag array
Structure sheaf is zigzag oldered array structure or zigzag disordered array structure, the orderly battle array of described zigzag
Array structure is realized by photoetching, nano impression or diamond cutting cutting method, described zigzag disordered array knot
Structure passes through photoetching, glancing angle deposition technology, nano impression or diamond cutting cutting method and realizes.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108165926A (en) * | 2017-12-18 | 2018-06-15 | 苏州宏策光电科技有限公司 | The method of the Mo/Si multilayer films of direct magnetic control technology manufacturing cycle thickness transverse direction two-dimensional gradient distribution |
| CN110632687A (en) * | 2018-06-22 | 2019-12-31 | 中国科学院上海微系统与信息技术研究所 | Metamaterial crystal structure capable of regulating and controlling electromagnetic wave absorption and preparation method thereof |
| CN113219794A (en) * | 2021-05-14 | 2021-08-06 | 中国科学院长春光学精密机械与物理研究所 | Extreme ultraviolet collecting mirror with energy recovery function and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105068166A (en) * | 2014-05-27 | 2015-11-18 | 中国科学院上海微系统与信息技术研究所 | Manufacturing method for high linear density EUV multilayer blazed grating |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105068166A (en) * | 2014-05-27 | 2015-11-18 | 中国科学院上海微系统与信息技术研究所 | Manufacturing method for high linear density EUV multilayer blazed grating |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108165926A (en) * | 2017-12-18 | 2018-06-15 | 苏州宏策光电科技有限公司 | The method of the Mo/Si multilayer films of direct magnetic control technology manufacturing cycle thickness transverse direction two-dimensional gradient distribution |
| CN110632687A (en) * | 2018-06-22 | 2019-12-31 | 中国科学院上海微系统与信息技术研究所 | Metamaterial crystal structure capable of regulating and controlling electromagnetic wave absorption and preparation method thereof |
| CN110632687B (en) * | 2018-06-22 | 2021-07-27 | 中国科学院上海微系统与信息技术研究所 | Metamaterial crystal structure capable of regulating and controlling electromagnetic wave absorption and preparation method thereof |
| CN113219794A (en) * | 2021-05-14 | 2021-08-06 | 中国科学院长春光学精密机械与物理研究所 | Extreme ultraviolet collecting mirror with energy recovery function and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106338882B (en) | 2019-11-05 |
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Effective date of registration: 20241008 Address after: Room 1, No. 3033 Pudong Road, Economic and Technological Development Zone, Changchun City, Jilin Province, China 130012 Patentee after: Changguang Jizhi Optical Technology Co.,Ltd. Country or region after: China Address before: 130033 No. 3888 southeast Lake Road, Changchun economic and Technological Development Zone, Jilin Patentee before: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CHINESE ACADEMY OF SCIENCE Country or region before: China |