CN106330105A - High-linearity dynamic range photoelectric sensor applied to blood oxygen detection - Google Patents
High-linearity dynamic range photoelectric sensor applied to blood oxygen detection Download PDFInfo
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- CN106330105A CN106330105A CN201610675216.7A CN201610675216A CN106330105A CN 106330105 A CN106330105 A CN 106330105A CN 201610675216 A CN201610675216 A CN 201610675216A CN 106330105 A CN106330105 A CN 106330105A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
- A61B5/14552—Details of sensors specially adapted therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
- H03F3/45381—Long tailed pairs
- H03F3/45385—Non-folded cascode stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/06—Frequency or rate modulation, i.e. PFM or PRM
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Abstract
The invention relates to a high-linearity dynamic range photoelectric sensor applied to blood oxygen detection. The photoelectric sensor comprises a differential operational amplifier A1, a differential operational amplifier Aau, a photoelectric diode array PD, a current mirror and a pulse frequency modulator PFM. The current mirror comprises an NMOS transistor M1, an NMOS transistor M2, an NMOS transistor M3 and an NMOS transistor M4. According to the photoelectric sensor, the technology of carrying out zero offset on the photoelectric diodes and adjusting offset voltages of the amplifiers to approach 0 through an amplifier monitoring mechanism is provided, the demand for a high-linearity dynamic range can be satisfied only by employing the single photoelectric diode, the area of a photoelectric sensor chip is greatly reduced, the cost is saved, the performance is clearly improved, and the photoelectric sensor is applicable to a high-precision blood oxygen detector system.
Description
Technical field
The invention belongs to IC design field, a kind of dynamic model of High Linear being applied to the detection of blood oxygen
Enclose photoelectric sensor.
Background technology
The photoelectric sensor with High Linear dynamic range is the important composition parts of modern sensor-based system.Such as, application
Photoelectric sensor in BOLD contrast, it is necessary to have high dynamic linear to respond the light of wavelength 660nm and 940nm.For high accuracy
Blood oxygen concentration detector require more than 100dB opto-electronic conversion linear dynamic range.Cost-effective angle, producers are partial to use
Single photodiode realizes optical sensor.But be but difficulty with when HDR expands under low-light conditions, because of
Being difficult to control to for dark current in single photodiode, impact is linear.Existing routine techniques is with two photodiodes, comes
Realize the light intensity frequency converter of a High Linear scope.One photodiode receives illumination, and another photodiode is then
Cover with top-level metallic and only produce dark current, by current mirror, dark current is produced electric current from photosensitive photodiode
Deducting, the range of linearity of photoelectric sensor can expand to low light intensity district.But the property that photoelectric sensor is under Low light intensity
Photodiode matching degree and the restriction of current mirror performance can be nevertheless suffered from, especially exist when the reversed bias voltage on photodiode
Time more than hundreds of millivolt, photodiode dark current at high temperature will significantly raise.Therefore, many industry products are high in low illumination
Perform poor when working under the conditions of temperature.One photodiode of many uses also can dramatically increase chip area and cost, because light
The area of electric diode is often several times as much as other modules, also can introduce more thermal noise.HDR can also use and adopt more
Sample technology realizes, but can sacrifice the linearity.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of High Linear dynamic range photoelectric transfer being applied to the detection of blood oxygen
Sensor,
It is an object of the invention to be achieved through the following technical solutions, a kind of High Linear being applied to the detection of blood oxygen is dynamic
Scope photoelectric sensor, including differential operational amplifier A1, differential operational amplifier Aau, photodiode array PD, current mirror
With pulse frequency modulator PFM;Described current mirror includes NMOS tube M1, NMOS tube M2, NMOS tube M3 and NMOS tube M4, described
The drain electrode of NMOS tube M1 and the drain electrode of NMOS tube M2 meet power vd D, and the grid of NMOS tube M1 is connected with the grid of NMOS tube M2,
The source electrode of NMOS tube M1 respectively with the grid of NMOS tube M1, the drain electrode of NMOS tube M4, differential operational amplifier AauForward input
End connects, the source electrode of described NMOS tube M2 respectively with drain electrode, the differential operational amplifier A of NMOS tube M3auReverse input end even
Connect, differential operational amplifier AauOutfan be connected with the grid of NMOS tube M3, the source electrode of NMOS tube and pulse frequency modulator
PFM connects, the grid of NMOS tube M4 and differential operational amplifier A1Outfan connect, differential operational amplifier A1Forward defeated
Enter and hold ground connection, differential operational amplifier A1Reverse input end be connected with the source electrode of NMOS tube M4, the source electrode of NMOS tube M4 is through light
Electric diode array PD ground connection;Described differential operational amplifier A1Outfan through load capacitance CCGround connection.
Further, described differential operational amplifier AauIncluding first order differential amplifier circuit, second level common source amplifying circuit,
Miller-compensated electric capacity CmWith NMOS tube Mr, described first order differential amplifier circuit includes NMOS tube M5~NMOS tube M11, described
Two pole common source amplifying circuits include NMOS tube MtipWith NMOS tube Mtin, the drain electrode of NMOS tube M5 and the drain electrode of NMOS tube M6 respectively with
Power vd D connect, the grid of NMOS tube M5 is connected with the grid of NMOS tube M6, the source electrode of NMOS tube M5 respectively with NMOS tube M6
Grid, the drain electrode of NMOS tube M7 connect, the source electrode of NMOS tube M6 respectively with the grid of NMOS tube M11, the drain electrode of NMOS tube M8,
NMOS tube MrDrain electrode connect, the source electrode of NMOS tube M7 is connected with the drain electrode of NMOS tube M9 after being connected with the source electrode of NMOS tube M8,
The source ground of NMOS tube M9, described NMOS tube MrSource electrode through miller-compensated electric capacity CmRespectively with the drain electrode of NMOS tube M10,
The source electrode of NMOS tube M11, the grid of NMOS tube M9 is connected with the grid of NMOS tube M10, described NMOS tube MrGrid and NMOS
Pipe MtipSource electrode connect, NMOS tube MtipGrid respectively with NMOS tube MtinDrain electrode, grid connect, NMOS tube MtipSource electrode
Ground connection, the source electrode of NMOS tube M9, the source electrode ground connection respectively of NMOS tube M10, the drain electrode of NMOS tube M11 is connected with power vd D, NMOS
The grid of pipe M7 and the grid of NMOS tube M8 connect input signal, NMOS tube MtipDrain electrode meet power vd D.
Further, described differential operational amplifier A1Including PMOS input difference to structure and collapsible tube-in-tube structure, institute
State PMOS input difference and structure is included PMOS Mr1, PMOS Mr2With PMOS Mr11, described collapsible tube-in-tube structure includes
PMOS Mr3, PMOS Mr4, PMOS Mr7, PMOS Mr8, PMOS Mr11, NMOS tube Mr5, NMOS tube Mr6, NMOS tube Mr9With
NMOS tube Mr10, described PMOS Mr11Source electrode be connected with power vd D, PMOS Mr11Drain electrode respectively with PMOS Mr1Source
Pole, PMOS Mr2Source electrode connect;Described PMOS Mr7Source electrode, PMOS Mr8Source electrode meet power vd D respectively, described
PMOS Mr7Drain electrode and PMOS Mr3Source electrode connect, PMOS Mr3Drain electrode and NMOS tube Mr5Drain electrode connect, NMOS tube
Mr5Source electrode and NMOS tube Mr9Drain electrode connect, NMOS tube Mr9Source ground, described PMOS Mr8Drain electrode and PMOS
Mr4Source electrode connect, PMOS Mr4Drain electrode and NMOS tube Mr6Drain electrode connect, NMOS tube Mr6Source electrode and NMOS tube Mr10Leakage
Pole connects, NMOS tube Mr10Source ground, described PMOS Mr7Grid and PMOS Mr8Grid connect, PMOS Mr3's
Grid and PMOS Mr4Grid connect, NMOS tube Mr5Grid and NMOS tube Mr6Grid connect, NMOS tube Mr9Grid with
NMOS tube Mr10Grid connect, PMOS Mr7Grid and PMOS Mr3Drain electrode connect, described PMOS Mr1Drain electrode with
PMOS Mr9Drain electrode connect, PMOS Mr2Drain electrode and NMOS tube Mr10Drain electrode connect, described PMOS Mr1Grid connect
Ground, described PMOS Mr2Grid be connected with input signal Vn, described PMOS Mr11Grid and input signal VbpConnect.
Further, described optical sensor also includes differential operational amplifier A1Mirror image amplifier Ar1, described mirror image amplifies
Device Ar1Outfan with fortune differential operational amplifier AauPositive input connect, differential operational amplifier AauOutput controls letter
Number Vb1Regulate operational amplifier A1Input offset voltage.
Further, described differential operational amplifier AauOutfan be connected to mirror image amplifier Ar1, make operational amplifier A1
Output voltage stabilization at VDD/2.
Further, described pulse frequency modulator PFM includes charging capacitor Ci, NMOS tube discharge switch SW, constant time lag
Circuit, comparator Aau1And d type flip flop, described d type flip flop uses the connection of 2 frequency dividings, described comparator Aau1Reverse input end
It is connected with the source electrode of NMOS tube M3, one end of charging capacitor Ci, the drain electrode of NMOS tube discharge switch SW respectively, charging capacitor Ci's
The other end, source electrode ground connection, the comparator A respectively of NMOS tube discharge switch SWau1Outfan be connected with constant time lag circuit,
The grid of NMOS tube discharge switch SW is connected with the outfan of constant time lag circuit, and the outfan of constant time lag circuit triggers with D
Device connects.
Owing to using above technical scheme, the invention have the advantages that
1, a photodiode is employed for the present invention relatively conventional photoelectric sensor less, a multiplex amplifier mirror
Image forming control circuit controls amplifier input offset voltage, and amplifier mirror image control circuit is little compared with area for photodiode
Much, chip area and production cost it are greatly saved.
2, the present invention is that the angle of suppression dark current improves photoelectric sensor in low illumination from allowing photodiode zero partially
Performance under hot conditions, the performance substantially increasing the linear dynamic range of photoelectric sensor, relatively conventional photoelectric sensor has
The lifting of essence.
Accompanying drawing explanation
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing the present invention made into
The detailed description of one step, wherein:
Fig. 1 is photodiode dark current and the relation of reversed bias voltage under different temperatures;
Fig. 2 is Electro-Optic Sensor System framework;
Fig. 3 is differential operational amplifier AauStructure;
Fig. 4 is differential operational amplifier A1Structure;
Fig. 5 is mirror image amplifier Ar1Monitoring structure figure;
Fig. 6 is pulse frequency modulator structure chart.
Detailed description of the invention
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
The dark current that as figure 1 shows the photodiode in P type substrate N well spends the variations in temperature model to 75 degree-25
Along with the change situation of photodiode reversed bias voltage, when as can be seen from the figure reversed bias voltage is not 0, photodiode under enclosing
Change along with temperature is doubled and redoubled by dark current.But all I V characteristic curves all will be intersected in the point that reversed bias voltage is 0,
That is, when photodiode reversed bias voltage is 0, photodiode dark current is the least and little with variations in temperature.This is will
Photodiode dark current controls to minimum and do not vary with temperature and provide possibility.The photosensor structure of the present invention also can
Photodiode reversed bias voltage on sheet is controlled to 0.
If Fig. 2 is photoelectric sensor framework proposed by the invention, it includes two differential operational amplifier A1,Aau;One
Individual photodiode array PD, a current mirror and a pulse frequency modulator.
Described current mirror includes NMOS tube M1, NMOS tube M2, NMOS tube M3 and NMOS tube M4, the drain electrode of described NMOS tube M1
Drain electrode with NMOS tube M2 meets power vd D, and the grid of NMOS tube M1 is connected with the grid of NMOS tube M2, and the source electrode of NMOS tube M1 divides
Not and the grid of NMOS tube M1, the drain electrode of NMOS tube M4, differential operational amplifier AauPositive input connect, described NMOS tube
The source electrode of M2 respectively with drain electrode, the differential operational amplifier A of NMOS tube M3auReverse input end connect, differential operational amplifier
AauOutfan be connected with the grid of NMOS tube M3, the source electrode of NMOS tube is connected with pulse frequency modulator PFM, NMOS tube M4
Grid and differential operational amplifier A1Outfan connect, differential operational amplifier A1Positive input ground connection, calculus of differences is put
Big device A1Reverse input end be connected with the source electrode of NMOS tube M4, the source electrode of NMOS tube M4 is through photodiode array PD ground connection;
Described differential operational amplifier A1Outfan through load capacitance CCGround connection.
Differential operational amplifier A1It is used for regulating NMOS tube M4VnTerminal voltage, simultaneously differential operational amplifier A1And NMOS
Pipe M4, differential operational amplifier AauWith NMOS tube M3Constitute gain bootstrap structure, improve NMOS tube M4With NMOS tube M3Drain terminal
Depending on entering resistance, allow current mirror closer to ideal.
Differential operational amplifier AauStructure as it is shown on figure 3, include that first order differential amplification and second level common source amplify,
Described differential operational amplifier AauMend including first order differential amplifier circuit, second level common source amplifying circuit, Miller
Repay electric capacity CmWith NMOS tube Mr, described first order differential amplifier circuit includes NMOS tube M5~NMOS tube M11, described second the most common
Source amplifying circuit includes NMOS tube MtipWith NMOS tube Mtin, the drain electrode of NMOS tube M5 and the drain electrode of NMOS tube M6 respectively with power supply
VDD connects, and the grid of NMOS tube M5 is connected with the grid of NMOS tube M6, the source electrode of NMOS tube M5 respectively with the grid of NMOS tube M6
Pole, the drain electrode of NMOS tube M7 connect, the source electrode of NMOS tube M6 respectively with the grid of NMOS tube M11, the drain electrode of NMOS tube M8, NMOS
Pipe MrDrain electrode connect, the source electrode of NMOS tube M7 is connected with the drain electrode of NMOS tube M9 after being connected with the source electrode of NMOS tube M8, NMOS
The source ground of pipe M9, described NMOS tube MrSource electrode through miller-compensated electric capacity CmRespectively with drain electrode, the NMOS tube of NMOS tube M10
The source electrode of M11, the grid of NMOS tube M9 is connected with the grid of NMOS tube M10, described NMOS tube MrGrid and NMOS tube Mtip's
Source electrode connects, NMOS tube MtipGrid respectively with NMOS tube MtinDrain electrode, grid connect, NMOS tube MtipSource ground,
The source electrode of NMOS tube M9, the source electrode ground connection respectively of NMOS tube M10, the drain electrode of NMOS tube M11 is connected with power vd D, NMOS tube M7
The grid of grid and NMOS tube M8 connect input signal, NMOS tube MtipDrain electrode meet power vd D.
The differential operational amplifier of the present invention adds miller-compensated electric capacity CmWith zero-regulator resistor MrSeparate for limit, surely
Determining amplifier, this amplifier has the open-loop gain of 70dB.According to the circuit structure of Fig. 2, can reverse-biased by photodiode PD
Voltmeter is shown as expression formula (1), wherein VOSIt is differential operational amplifier A1Input offset voltage, IphFlow through for photodiode
Electric current, VOIt is A1Output voltage, VnIt is the reversed bias voltage of photodiode, and Kn=μnCOX(W/L)M4.Because Vn<<Vth4,
VnExpression formula (2) can be further expressed as
From expression formula (2) it can be seen that VnIncluding 2 two, in order to allow VnLevel off to 0 have to these two all reduce, first
Item is and photodiode current IphRelevant item, in order to reduce this, will increase amplifier gain A as far as possible1, the present invention
The differential operational amplifier A used1Structure such as Fig. 4, this structure have employed PMOS input difference to structure, and uses folding
Formula tube-in-tube structure, open-loop gain is up to 90dB, it is possible to the item relevant with photodiode current is suppressed to below 0.1mV.Fig. 2
Structure in due on photodiode chip area very big, parasitic capacitance C of a pF level can be producedP, therefore it is specifically added
One load capacitance CCTo amplifier A1Output stage dominant pole is pushed lower frequency to keep loop stability.
Specifically, described differential operational amplifier A1Including PMOS input difference to structure and collapsible tube-in-tube structure, institute
State PMOS input difference and structure is included PMOS Mr1, PMOS Mr2With PMOS Mr11, described collapsible tube-in-tube structure includes
PMOS Mr3, PMOS Mr4, PMOS Mr7, PMOS Mr8, PMOS Mr11, NMOS tube Mr5, NMOS tube Mr6, NMOS tube Mr9With
NMOS tube Mr10, described PMOS Mr11Source electrode be connected with power vd D, PMOS Mr11Drain electrode respectively with PMOS Mr1Source
Pole, PMOS Mr2Source electrode connect;Described PMOS Mr7Source electrode, PMOS Mr8Source electrode meet power vd D respectively, described
PMOS Mr7Drain electrode and PMOS Mr3Source electrode connect, PMOS Mr3Drain electrode and NMOS tube Mr5Drain electrode connect, NMOS tube
Mr5Source electrode and NMOS tube Mr9Drain electrode connect, NMOS tube Mr9Source ground, described PMOS Mr8Drain electrode and PMOS
Mr4Source electrode connect, PMOS Mr4Drain electrode and NMOS tube Mr6Drain electrode connect, NMOS tube Mr6Source electrode and NMOS tube Mr10Leakage
Pole connects, NMOS tube Mr10Source ground, described PMOS Mr7Grid and PMOS Mr8Grid connect, PMOS Mr3's
Grid and PMOS Mr4Grid connect, NMOS tube Mr5Grid and NMOS tube Mr6Grid connect, NMOS tube Mr9Grid with
NMOS tube Mr10Grid connect, PMOS Mr7Grid and PMOS Mr3Drain electrode connect, described PMOS Mr1Drain electrode with
PMOS Mr9Drain electrode connect, PMOS Mr2Drain electrode and NMOS tube Mr10Drain electrode connect, described PMOS Mr1Grid connect
Ground, described PMOS Mr2Grid be connected with input signal Vn, described PMOS Mr11Grid and input signal VbpConnect.
Also having one in expression formula (2) is the item unrelated with photodiode current, i.e. differential operational amplifier A1Defeated
Enter offset voltage VOS, how to produce unrelated with PVT and that amplitude is less than a 1mV input offset voltage (the least voltage
Within photodiode dark current can being limited in 5pA) it is key and the difficult point of the present invention.In order to realize that calculus of differences is put
Big device A1The monitoring of input offset voltage, we used a differential operational amplifier A1Mirror image amplifier Ar1Such as Fig. 5, it
DC control signal V can be automatically generatedb1Regulate differential operational amplifier A1Input offset voltage.This structure has two
Technical essential, first ground end has all been received in PMOS Differential Input two ends by it.So when being left intact, we will be
Outfan obtains mirror image amplifier Ar1Input offset voltage, if but now according to Fig. 5, introduce one at amplifier out
Negative-feedback circuit, feedback signal Vb1It is used for controlling PMOS Mr3With PMOS Mr4Grid, the negative feedback being thusly-formed can be by
Amplifier output voltage OUT is stable at VDD/2.So mirror image amplifier A it is achieved thatr1Input offset voltage zeroing,
If we are by control signal Vb1Act on differential operational amplifier A1Identical place can be achieved with differential operational amplifier
A1Input offset voltage zeroing.Although this loop DC gain is the highest, but it is easy to keep stable, because this loop is simply
One DC control signal is provided, can be operated in extremely low bandwidth range, thus be easy to that non-dominant pole is shifted onto unit and increase
Loop stability is kept beyond benefit bandwidth.Mirror image amplifier Ar1The input offset voltage with temperature and time drift can be compensated,
If mirror image amplifier A in theoryr1With differential operational amplifier A1Domain coupling good, then differential operational amplifier A1's
Input offset voltage can significantly reduce.In order to simplify the loop stability analysis of multi-level feedback, by Fig. 5, calculus of differences is amplified
Device AauNegative terminal fix the level receiving VDD/2.So total remaining offset voltage Vos-resExpression formula can be expressed as
(3) (V in formulaDDFor supply voltage, Vth_M4For NMOS tube M4Pipe threshold voltage, VOSAnd VOS_raIt is respectively A1And Ar1Input imbalance
Voltage)
The structure of pulse frequency modulator as shown in Figure 6, wherein Aau1It is the comparator of a high-gain, CiFor charged electrical
Holding, SW is NMOS tube discharge switch, and delay is the time delay that constant time lag circuit produces 150ns, and d type flip flop below uses 2 points
The connection of frequency ensure that manipulator output signal dutycycle is fixed as 50%.Specifically, described pulse frequency modulator PFM includes
Charging capacitor Ci, NMOS tube discharge switch SW, constant time lag circuit, comparator Aau1And d type flip flop, described d type flip flop uses 2
The connection of frequency dividing, described comparator Aau1Reverse input end respectively with the source electrode of NMOS tube M3, one end of charging capacitor Ci,
The drain electrode of NMOS tube discharge switch SW connects, the other end of charging capacitor Ci, the source electrode ground connection respectively of NMOS tube discharge switch SW,
Comparator Aau1Outfan be connected with constant time lag circuit, the grid of NMOS tube discharge switch SW and constant time lag circuit
Outfan connects, and the outfan of constant time lag circuit is connected with d type flip flop.
During work, current mirror the image current I obtainedpfmFor CiCharging, when reaching comparator thresholding VbgrTime, will produce
Control signal Time delay circuit produces fixing reset pulse, and reset pulse will open NMOS tube discharge switch SW, will charging
Electric capacity CiThe electric charge release of upper accumulation.If image current IpfmFixing, then can produce the pulse reset signal of fixed cycle, warp
After crossing d type flip flop two divided-frequency, produce the output signal of dutycycle 50%, and electric current IpfmThe biggest, the output signal cycle of generation
Also can be the biggest, so it is achieved that pulse frequency modulated.
The present invention is directed to traditional photoelectric sensor product, dynamic range is the highest (to be called for short technique-power supply-temperature
" PVT ") sensitive, particularly under the conditions of low illumination and high-temperature, performance significant degradation, though using double photodiode design
So performance increases, but significantly increases cost, introduces more noise, and creative proposes by photodiode zero partially,
And regulate, by amplifier monitors mechanism, the technology that offset voltage of amplifier is close to 0, it is achieved that only with single on chip
Photodiode just can meet the demand of high dynamic linear response range, substantially reduces the area of photoelectric sensor chip, saves
Cost, performance also significantly improves simultaneously, is suitable among high-precision blood oxygen detection system.
Finally illustrate, preferred embodiment above only in order to technical scheme to be described and unrestricted, although logical
Cross above preferred embodiment the present invention to be described in detail, it is to be understood by those skilled in the art that can be
In form and it is made various change, without departing from claims of the present invention limited range in details.
Claims (6)
1. the High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen, it is characterised in that: include that calculus of differences is put
Big device A1, differential operational amplifier Aau, photodiode array PD, current mirror and pulse frequency modulator PFM;Described current mirror
Including NMOS tube M1, NMOS tube M2, NMOS tube M3 and NMOS tube M4, the drain electrode of described NMOS tube M1 connects with the drain electrode of NMOS tube M2
Power vd D, the grid of NMOS tube M1 is connected with the grid of NMOS tube M2, the source electrode of NMOS tube M1 respectively with the grid of NMOS tube M1
Pole, the drain electrode of NMOS tube M4, differential operational amplifier AauPositive input connect, the source electrode of described NMOS tube M2 respectively with
The drain electrode of NMOS tube M3, differential operational amplifier AauReverse input end connect, differential operational amplifier AauOutfan with
The grid of NMOS tube M3 connects, and the source electrode of NMOS tube is connected with pulse frequency modulator PFM, and the grid of NMOS tube M4 is transported with difference
Calculate amplifier A1Outfan connect, differential operational amplifier A1Positive input ground connection, differential operational amplifier A1Reverse
Input is connected with the source electrode of NMOS tube M4, and the source electrode of NMOS tube M4 is through photodiode array PD ground connection;Described calculus of differences
Amplifier A1Outfan through load capacitance CCGround connection.
A kind of High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen the most according to claim 1, its feature
It is: described differential operational amplifier AauIncluding first order differential amplifier circuit, second level common source amplifying circuit, miller-compensated electricity
Hold CmWith NMOS tube Mr, described first order differential amplifier circuit includes that NMOS tube M5~NMOS tube M11, described second pole common source are put
Big circuit includes NMOS tube MtipWith NMOS tube Mtin, the drain electrode of NMOS tube M5 and the drain electrode of NMOS tube M6 are respectively with power vd D even
Connecing, the grid of NMOS tube M5 is connected with the grid of NMOS tube M6, the source electrode of NMOS tube M5 respectively with grid, the NMOS of NMOS tube M6
The drain electrode of pipe M7 connects, the source electrode of NMOS tube M6 respectively with the grid of NMOS tube M11, the drain electrode of NMOS tube M8, NMOS tube Mr's
Drain electrode connects, and the source electrode of NMOS tube M7 is connected with the drain electrode of NMOS tube M9 after being connected with the source electrode of NMOS tube M8, NMOS tube M9
Source ground, described NMOS tube MrSource electrode through miller-compensated electric capacity CmRespectively with drain electrode, the source of NMOS tube M11 of NMOS tube M10
Pole, the grid of NMOS tube M9 is connected with the grid of NMOS tube M10, described NMOS tube MrGrid and NMOS tube MtipSource electrode even
Connect, NMOS tube MtipGrid respectively with NMOS tube MtinDrain electrode, grid connect, NMOS tube MtipSource ground, NMOS tube M9
Source electrode, the source electrode respectively ground connection of NMOS tube M10, the drain electrode of NMOS tube M11 is connected with power vd D, the grid of NMOS tube M7 and
The grid of NMOS tube M8 connects input signal, NMOS tube MtipDrain electrode meet power vd D.
A kind of High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen the most according to claim 1, its feature
It is: described differential operational amplifier A1Including PMOS input difference, structure and collapsible tube-in-tube structure, described PMOS are inputted
Differential pair structure includes PMOS Mr1, PMOS Mr2With PMOS Mr11, described collapsible tube-in-tube structure includes PMOS Mr3、
PMOS Mr4, PMOS Mr7, PMOS Mr8, PMOS Mr11, NMOS tube Mr5, NMOS tube Mr6, NMOS tube Mr9With NMOS tube Mr10,
Described PMOS Mr11Source electrode be connected with power vd D, PMOS Mr11Drain electrode respectively with PMOS Mr1Source electrode, PMOS
Mr2Source electrode connect;Described PMOS Mr7Source electrode, PMOS Mr8Source electrode connect power vd D, described PMOS M respectivelyr7Leakage
Pole and PMOS Mr3Source electrode connect, PMOS Mr3Drain electrode and NMOS tube Mr5Drain electrode connect, NMOS tube Mr5Source electrode with
NMOS tube Mr9Drain electrode connect, NMOS tube Mr9Source ground, described PMOS Mr8Drain electrode and PMOS Mr4Source electrode even
Connect, PMOS Mr4Drain electrode and NMOS tube Mr6Drain electrode connect, NMOS tube Mr6Source electrode and NMOS tube Mr10Drain electrode connect, NMOS
Pipe Mr10Source ground, described PMOS Mr7Grid and PMOS Mr8Grid connect, PMOS Mr3Grid and PMOS
Pipe Mr4Grid connect, NMOS tube Mr5Grid and NMOS tube Mr6Grid connect, NMOS tube Mr9Grid and NMOS tube Mr10
Grid connect, PMOS Mr7Grid and PMOS Mr3Drain electrode connect, described PMOS Mr1Drain electrode and PMOS Mr9's
Drain electrode connects, PMOS Mr2Drain electrode and NMOS tube Mr10Drain electrode connect, described PMOS Mr1Grounded-grid, described PMOS
Pipe Mr2Grid be connected with input signal Vn, described PMOS Mr11Grid and input signal VbpConnect.
A kind of High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen the most according to claim 1, its feature
It is: described photoelectric sensor also includes differential operational amplifier A1Mirror image amplifier Ar1, described mirror image amplifier Ar1Defeated
Go out end and differential operational amplifier AauPositive input connect, differential operational amplifier AauOutput control signal Vb1Regulate
Operational amplifier A1Input offset voltage.
A kind of High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen the most according to claim 4, its feature
It is: described differential operational amplifier AauOutfan be connected to mirror image amplifier Ar1, make differential operational amplifier A1Output
Voltage stabilization is at VDD/2.
A kind of High Linear dynamic range photoelectric sensor being applied to the detection of blood oxygen the most according to claim 1, its feature
It is: described pulse frequency modulator PFM includes charging capacitor Ci, NMOS tube discharge switch SW, constant time lag circuit, comparator
Aau1And d type flip flop, described d type flip flop uses the connection of 2 frequency dividings, described comparator Aau1Reverse input end respectively with NMOS tube
The source electrode of M3, one end of charging capacitor Ci, the drain electrode of NMOS tube discharge switch SW connect, the other end of charging capacitor Ci, NMOS
Source electrode ground connection, the comparator A respectively of tube discharge switch SWau1Outfan be connected with constant time lag circuit, NMOS tube electric discharge open
The grid closing SW is connected with the outfan of constant time lag circuit, and the outfan of constant time lag circuit is connected with d type flip flop.
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