CN106329959A - High-voltage self-powered circuit - Google Patents
High-voltage self-powered circuit Download PDFInfo
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Abstract
The invention provides a high-voltage self-powered circuit, including a JFET adjusting tube, a current-limiting resistor, a first switch tube, a second switch tube, a voltage stabilization capacitor, a control circuit and a power MOS tube. Compared with a traditional high-voltage power supply circuit, the high-voltage self-powered circuit is characterized in that a novel high-voltage self-powered circuit structure and method are adopted, a VCC power supply pin is omitted in a chip, the peripheral circuit is simpler, a high voltage starting resistor and a voltage stabilization capacitor are omitted, the system cost is lower, and the size is smaller. A clamping diode and a modulation circuit are omitted in a circuit, the circuit structure is simple, the reliability is high, the chip area is greatly reduced, and the chip cost and the system cost are greatly reduced. Further, the high-voltage self-powered circuit with a current-limiting function is limited in terms of charging current in the system establishment process, the current value is maintained constant, the VDD voltage is increased in a linear manner, the overshoot phenomenon in the power on process is effectively avoided, and damages of overlarge current on devices are prevented.
Description
Technical field
The invention belongs to IC design field, particularly relate to a kind of high pressure self-powered circuit.
Background technology
In LED drive circuit, it will usually use high-voltage power supply circuit, busbar voltage is converted to after treatment for internal circuit
The level used.Traditional method is busbar voltage to be activated after resistance current limliting by clamp diode voltage stabilizing, then by chip internal
Modulation circuit process after obtain required level.This method power pins is requisite, but also need start resistance,
The peripheral components such as feedback resistance, clamp diode and electric capacity of voltage regulation, system cost is high, and volume is big.
Traditional high-voltage power supply circuit is as it is shown in figure 1, AC-input voltage forms bus after bridge heap rectification and electric capacity C1 filter
Voltage, busbar voltage is activated after resistance Rstart current limliting charges for electric capacity C2, and VCC voltage is gradually increasing, and final stable exists
The voltage stabilizing value of clamp diode D1.Owing to VCC voltage is affected by the factor such as technique, temperature, precision is relatively low, therefore VCC
Voltage need to produce internal level VDD accurately after inner modulation circuit Regulator modulates, for other modules of chip internal
Power supply.
This high-voltage power supply circuit is owing to using high voltage startup resistance, and internal circuit needs integrated clamp diode, and needs modulation circuit,
Therefore circuit is complex, and chip VCC pin is also essential, and system cost is high, and volume is big.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of high pressure self-powered circuit, is used for solving
In prior art, circuit is complex, system cost is high, bulky problem.
For achieving the above object, the present invention provides a kind of high pressure self-powered circuit, and described high pressure self-powered circuit includes: JFET adjusts
Homogeneous tube, current-limiting resistance, the first switching tube, second switch pipe, electric capacity of voltage regulation, control circuit and power MOS pipe, its
In: described JFET adjusts grid and the Substrate ground of pipe, and drain electrode connects the second pole of power MOS pipe, and source electrode connects current-limiting resistance
First end and the second pole of second switch pipe；Second pole of second termination the first switching tube of described current-limiting resistance and second switch pipe
Grid；The grid of described first switching tube is by control circuit control, the first pole and Substrate ground；The of described second switch pipe
Two poles and substrate are for connecing vdd voltage, and connect the first pole plate of electric capacity of voltage regulation；Second pole plate ground connection of described electric capacity of voltage regulation；Institute
Stating control circuit to be powered by VDD, and modulated by system loop, its first outfan is for controlling the work shape of power MOS pipe
State, the most described control circuit detection vdd voltage value, its second outfan is for controlling the duty of the first switching tube；
The grid of described power MOS pipe connects the first outfan of described control circuit, and the drain electrode that the second pole adjusts pipe with JFET is connected
Connect, the first pole and Substrate ground.
As a kind of preferred version of the high pressure self-powered circuit of the present invention, the second pole of described power MOS pipe is defeated as chip
Going out port, the external inductance of sheet and Schottky diode, simultaneously as the power input of self-powered circuit.
As a kind of preferred version of the high pressure self-powered circuit of the present invention, described first switching tube, second switch pipe are NMOS
Pipe, its first extremely source electrode, second extremely drains.
As a kind of preferred version of the high pressure self-powered circuit of the present invention, described power MOS pipe is power NMOS tube, its
First extremely source electrode, second extremely drains.
As a kind of preferred version of the high pressure self-powered circuit of the present invention, also include current limliting detection resistance and Current limited Control pipe, its
In: described current limliting detection resistance the first end be connected with the first pole, the grid of Current limited Control pipe of second switch pipe, the second end and
Vdd voltage is connected；Second pole of described Current limited Control pipe is opened with the second end of current-limiting resistance, the grid of second switch pipe and first
The second of pass pipe is the most connected, and grid is connected with the first pole of second switch pipe and the second end of current limliting detection resistance, the first pole and lining
The end, is connected with vdd voltage.
Further, described Current limited Control pipe is NMOS tube, and its first extremely source electrode, second extremely drains.
As it has been described above, the high pressure self-powered circuit of the present invention, have the advantages that compared with traditional high-voltage power supply circuit,
Present invention employs a kind of high pressure self-powered circuit structure, chip eliminates VCC energization pins, and peripheral circuit is more simplified, joint
Having saved high voltage startup resistance and electric capacity of voltage regulation, system cost is low, and volume is little.Clamp diode and modulation electricity is eliminated inside circuit
Road, circuit structure is simple, and reliability is high, and chip area significantly reduces, and chip cost and system cost are substantially reduced.Further
Ground, the high pressure self-powered circuit of band current limiting function, during system is set up, charging current is restricted, and current value can be protected
Hold constant, vdd voltage linear rise, effectively prevent the overshoot phenomenon in power up and the excessive damage that device is caused of electric current
Wound.
Accompanying drawing explanation
Fig. 1 is shown as the electrical block diagram of a kind of high-voltage power supply circuit of the prior art.
Fig. 2 is shown as the electrical block diagram of the high pressure self-powered circuit of the present invention.
Fig. 3 is shown as the sequential chart of the high pressure self-powered circuit of the present invention.
Fig. 4 is shown as the electrical block diagram of the high pressure self-powered circuit of the band current-limiting function of the present invention.
Fig. 5 be shown as the present invention without current limliting and the voltage x current sequential chart of band current limliting high pressure self-powered circuit.
Element numbers explanation
J1 JFET adjusts pipe
R1 current-limiting resistance
NM1 the first switching tube
NM2 second switch pipe
C3 electric capacity of voltage regulation
Control control circuit
NM0 power MOS pipe
R2 current limliting detection resistance
NM3 Current limited Control pipe
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to Fig. 2～Fig. 5.It should be noted that the diagram provided in the present embodiment illustrates the present invention's the most in a schematic way
Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape and
Size is drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment 1
As in figure 2 it is shown, the present embodiment provides a kind of high pressure self-powered circuit, described high pressure self-powered circuit includes: JFET adjusts
Pipe J1, current-limiting resistance R1, the first switching tube NM1, second switch pipe NM2, electric capacity of voltage regulation C3, control circuit Control,
And power MOS pipe NM0, wherein: described JFET adjusts grid and the Substrate ground of pipe J1, drain electrode meets power MOS
Second pole of pipe NM0, source electrode connects the first end and second pole of second switch pipe NM2 of current-limiting resistance R1；Described current limliting electricity
Second pole of the second termination first switching tube NM1 of resistance R1 and the grid of second switch pipe NM2；Described first switching tube NM1
Grid controlled by control circuit Control, the first pole and Substrate ground；Second pole of described second switch pipe NM2 and substrate
For connecing vdd voltage, and connect first pole plate of electric capacity of voltage regulation C3；The second pole plate ground connection of described electric capacity of voltage regulation C3；Described control
Circuit Control processed is powered by VDD, and is modulated by system loop, and its first outfan is used for controlling power MOS pipe NM0
Duty, the most described control circuit Control detection vdd voltage value, its second outfan for control first switch
The duty of pipe NM1；The grid of described power MOS pipe NM0 connects the first outfan of described control circuit Control,
The drain electrode that second pole adjusts pipe J1 with JFET is connected, the first pole and Substrate ground, the second of described power MOS pipe NM0
Pole is as chip output mouth, and the external inductance of sheet and Schottky diode, simultaneously as the power input of self-powered circuit.
In the present embodiment, described first switching tube NM1, second switch pipe NM2 are NMOS tube, its first extremely source electrode,
Second extremely drains, and described power MOS pipe NM0 is power NMOS tube, and its first extremely source electrode, second extremely drains.
Specifically, as in figure 2 it is shown, described high pressure self-powered circuit includes:
The JFET being made up of JFET device J1 adjusts pipe, and its grid and substrate electric potential are GND, and drain electrode connects power MOS pipe
The drain electrode SW of NM0, source electrode connects current-limiting resistance R1 and the drain electrode of second switch pipe NM2；
The current-limiting resistance being made up of R1, a termination JFET adjusts source electrode and the drain electrode of second switch pipe NM2 of pipe J1, another
Terminate drain electrode and the grid of NM2 of the first switching tube NM1；
The first switching tube being made up of NM1, its grid is controlled by control circuit Control, and drain electrode meets current-limiting resistance R1 and D
The grid of second switch pipe NM2, source electrode and Substrate ground GND；
The second switch pipe being made up of NM2, grid connects current-limiting resistance R1 and the drain electrode of the first switching tube NM1, and drain electrode connects limit
The leakage resistance R1 other end and JFET adjust pipe J1 source electrode, and source electrode and substrate are vdd voltage, and connect the upper of electric capacity of voltage regulation C3
Pole plate；
The electric capacity of voltage regulation being made up of C3, top crown is VDD, connects source electrode and the substrate of second switch pipe NM2, and bottom crown connects
Ground GND；
By the control circuit of Control module composition, VDD power, modulated by system loop, its first outfan DRV
For controlling the duty of power MOS pipe NM0, the vdd voltage value of Control module detection simultaneously, its second outfan
VDD_OK is for controlling the duty of the first switching tube NM1；
The power MOS pipe NM0 being made up of NM0, its grid is controlled by the first outfan DRV of control circuit Control,
Drain electrode is chip SW end, and the external inductance of sheet and Schottky diode, simultaneously as the power input of self-powered circuit, with JFET
Adjust pipe J1 drain electrode to be connected, its source electrode and Substrate ground GND.
Generally speaking, the high pressure self-powered circuit of the present embodiment is mainly adjusted pipe J1, current-limiting resistance R1, the first switch by JFET
Pipe NM1, second switch pipe NM2, electric capacity of voltage regulation C3, control circuit Control and power MOS pipe NM0, by merit
Rate metal-oxide-semiconductor drain electrode SW end is powered, and controlled module Control outfan VDD_OK controls, the vdd voltage warp of generation
Export after filter capacitor C3 voltage stabilizing, for other module for power supply of chip internal.SW terminal voltage is that busbar voltage is through LED and inductance
After blood pressure lowering, access chip obtains, and is modulated by power MOS pipe NM0.
The high pressure self-powered circuit operation principle of the present embodiment and embodiment combine sequential shown in the circuit diagram shown in Fig. 2 and Fig. 3
Figure is described in detail.
In the T0 moment, chip powers on, and starts to start, and now internal level VDD is 0V, owing to Control module is by VDD
Power supply, the most now its output signal DRV and VDD_OK are 0V, now power MOS pipe NM0 and first switch
Pipe NM1 is turned off.Busbar voltage is access chip SW end after LED and inductance L1 blood pressure lowering, as the electricity of self-powered circuit
Source adjusts pipe J1 drain electrode and is connected with JFET.Owing to power MOS pipe NM0 turns off, the most now SW end is high level.By
Turning off in the first switching tube NM1, second switch pipe NM2 grid is connected with voltage regulation resistance R1 with drain electrode, and current potential is equal, because of
This second switch pipe NM2 turns on, and owing to now vdd voltage is 0V, therefore JFET adjusts pipe J1 source voltage is low electricity
Flat, JFET adjusts pipe J1 conducting.It is that electric capacity of voltage regulation C3 charges that SW adjusts pipe J1, second switch pipe NM2 by JFET,
VDD current potential gradually rises, and only reaches setting value.
In the T1 moment, VDD reaches setting value, and chip starts normally to work.When Control module detects that VDD reaches to set
After value, the upset of output signal VDD_OK is high level, and now the first switching tube NM1 conducting, by second switch pipe NM2's
Grid voltage pulls down to GND, and therefore second switch pipe NM2 turns off.Now SW cannot again by JFET adjust pipe J1 and
Second switch pipe NM2 is electric capacity of voltage regulation C3 charging, and the electric charge that vdd voltage is stored by electric capacity of voltage regulation C3 maintains, due to chip
The consumption of internal module quiescent current, vdd voltage is gradually reduced.After chip starts normally to work, Control module meeting
Detection SW voltage and inductive current, control power tube by DRV signal after system loop is modulated and be in alternate conduction shutoff shape
State, and then realize the current constant control of LED current.
In the T2 moment, VDD level drops to setting value lower limit, after Control module detects, and output signal VDD_OK
Upset is low level, and the first switching tube NM1 turns off, and second switch pipe NM2 grid is connected by current-limiting resistance R1 with drain electrode,
Current potential is equal, therefore second switch pipe NM2 conducting, and it is voltage stabilizing that SW adjusts pipe J1, second switch pipe NM2 by JFET
Electric capacity C3 charges, and VDD current potential gradually rises, until reaching setting value.
In the T3 moment, VDD reaches setting value, and this high pressure self-powered circuit duty is identical with the T1 moment, therefore system stability
After, circuit working state and pattern circulated in T1 to the T3 moment.
After chip starts normally to work, being modulated by system loop, DRV signal can control power tube alternate conduction and turn off.When
Power MOS pipe NM0 conducting when DRV is high level, now SW current potential is 0V；The power MOS when DRV is low level
Pipe NM0 turns off, and now SW is high level, possesses charging ability.Therefore Control inside modules logic set, only when
When DRV signal is low level, after detecting that VDD level drops to setting value lower limit, VDD_OK signal just can overturn and be
Low level.
The above, for high pressure self-powered circuit structure and the method for a kind of novelty of the present invention, drained by power tube
SW is that circuit is powered, and chip eliminates VCC energization pins, and therefore peripheral circuit is more simplified, and saves high voltage startup resistance
And electric capacity of voltage regulation, system cost is low, and volume is little.Owing to using JFET as adjusting pipe inside circuit, eliminate clamper two pole
Pipe and modulation circuit, circuit structure is simple, and reliability is high, and chip area significantly reduces, and chip cost and system cost are significantly
Reduce.
Embodiment 2
As shown in Figure 4, the high pressure self-powered circuit of the present embodiment a kind of band current-limiting function of offer, its basic structure such as embodiment 1,
Wherein, the high pressure self-powered circuit of the band current-limiting function of the present embodiment also includes that current limliting detects resistance R2 and Current limited Control pipe NM3,
First end of described current limliting detection resistance R2 is connected with the first pole, the grid of Current limited Control pipe NM3 of second switch pipe NM2,
Second end is connected with vdd voltage；Second pole of described Current limited Control pipe NM3 and second end of current-limiting resistance R1, second open
Close the second the most connected of the grid of pipe NM2 and the first switching tube NM1, first pole of grid and second switch pipe NM2 and limit
Second end of stream detection resistance R2 is connected, and the first pole is connected with vdd voltage with substrate.In the present embodiment, described current limliting control
Tubulation NM3 is NMOS tube, and its first extremely source electrode, second extremely drains.
Specifically, in tradition power supply circuits, owing to system peripherals employs startup resistance, while charging for electric capacity of voltage regulation
Also play the effect of current limliting.In the circuit structure shown in the present invention, owing to saving high voltage startup resistance, internal level VDD
In uphill process, the charging current of electric capacity of voltage regulation C3 can carry out current limliting by additive method, i.e. at above-mentioned high pressure self-powered circuit
Derived the high pressure self-powered circuit structure of band current limiting function on architecture basics, its circuit diagram as shown in Figure 4, including:
The current limliting detection resistance being made up of R2 is increased on the basis of high pressure self-powered circuit, one end and second switch pipe NM2 source electrode,
Current limited Control pipe NM3 grid is connected, and the other end is vdd terminal, and
The Current limited Control pipe being made up of NM3, its drain electrode and current-limiting resistance R1, the grid of second switch pipe NM2 and the first switch
The drain electrode of pipe NM1 is connected, and its grid is connected with source electrode and the current limliting detection resistance R2 of NM2, and its source electrode and substrate are VDD
End.
The high pressure self-powered circuit operation principle of the band current-limiting function of the present embodiment and vdd voltage control mode and embodiment 1 class
Seemingly, below in conjunction with the two kinds of circuit without current-limiting function and band current limiting function shown in circuit diagram shown in Fig. 4 and Fig. 5 worked
Vdd voltage electric current sequential chart in journey, emphasis illustrates circuit operation principle and the control method of current-limiting function.
The high pressure self-powered circuit without current-limiting function in embodiment 1 vdd voltage in the course of the work and charging current IVDD
Change over oscillogram as shown in VDD1 and IVDD1 in Fig. 5:
The T0 moment is chip initial state, and now chip not yet works, and vdd voltage is zero, and charging current IVDD is zero.
In the T1 moment, chip starts working, and vdd voltage starts to raise, and specific works principle is as described in Example 1, the most superfluous
State.Now relatively low due to vdd voltage, it is relatively low that JFET adjusts pipe J1 source voltage, and now IVDD charging current is very big,
Vdd voltage rises quickly.Along with vdd voltage gradually rises, JFET adjusts pipe J1 source voltage and gradually rises, charged electrical
Stream IVDD is gradually reduced.Now the vdd voltage rate of rise is gradually reduced.
In the T2 moment, vdd voltage reaches setting value, and second switch pipe NM2 turns off afterwards, and charging current IVDD reduces to zero.
In vdd voltage uphill process, charging current IVDD raises with vdd voltage and reduces, and by second switch pipe NM2
Adjust pipe J1 technique and equipment parameters affect with JFET, but owing to not having current-limiting circuit, concrete current value is difficult to control to.
The high pressure self-powered circuit of the band current-limiting function of the present embodiment vdd voltage in the course of the work and charging current IVDD
Change over oscillogram as shown in VDD2 and IVDD2 in Fig. 5:
The T0 moment is chip initial state, and now chip not yet works, and vdd voltage is zero, and charging current IVDD is zero.
In the T1 moment, chip starts working, and the upset of control signal VDD_OK is low level, now due to charging current IVDD
Being zero, the pressure drop on current limliting detection resistance R2 is zero, and Current limited Control pipe NM3 turns off, the grid electricity of second switch pipe NM2
Pressure is drawn high by current-limiting resistance R1, and second switch pipe NM2 turns on, and charging current IVDD increases, and starts as electric capacity of voltage regulation
C3 charges, and vdd voltage gradually rises.Along with charging current IVDD increases, the pressure drop on current limliting detection resistance R2 gradually increases
Greatly, i.e. the gate source voltage of Current limited Control pipe NM3 increases.After charging current IVDD increases to a certain current value, current limliting detects
Pressure drop on resistance R2 can cause Current limited Control pipe NM3 to turn on, and is dragged down by second switch pipe NM2 grid voltage, second
The gate source voltage of switching tube NM2 reduces, and charging current no longer increases, and IVDD electric current now is the cut-off current of charging current.
Now in circuit, current-limiting resistance R1, current limliting detection resistance R2, second switch pipe NM2 and Current limited Control pipe NM3 constitute negative anti-
Current feed circuit, it is stable on cut-off current that system loop controls charging current, and is continuously VDD electric capacity of voltage regulation C3 charging with this electric current,
Vdd voltage linearly raises.The cut-off current of charging current is detected resistance R2 by gate source voltage and the current limliting of Current limited Control pipe NM3
Resistance determine, it may be assumed that
IVDD=VGS_NM3/ R2,
It follows that the resistance of regulation current limliting detection resistance R2, the cut-off current of charging current can be set easily.
In the T3 moment, vdd voltage reaches setting value, and the upset of control signal VDD_OK is high level, the first switching tube NM1
Second switch pipe NM2 grid voltage is also dragged down by conducting, and second switch pipe NM2 turns off, and charging current IVDD reduces to zero.
In this circuit, during setting up due to vdd voltage, charging current is restricted, and therefore charging current can keep constant,
Vdd voltage linear rise, effectively prevent the overshoot phenomenon in power up and the excessive damage causing device of electric current.
As it has been described above, the present invention provides a kind of high pressure self-powered circuit, described high pressure self-powered circuit includes: JFET adjustment pipe J1,
Current-limiting resistance R1, the first switching tube NM1, second switch pipe NM2, electric capacity of voltage regulation C3, control circuit Control and
Power MOS pipe NM0, wherein: described JFET adjusts grid and the Substrate ground of pipe J1, drain electrode meets power MOS pipe NM0
The second pole, source electrode connects the first end and second pole of second switch pipe NM2 of current-limiting resistance R1；Described current-limiting resistance R1's
Second pole of second termination the first switching tube NM1 and the grid of second switch pipe NM2；The grid of described first switching tube NM1
Pole is controlled by control circuit Control, the first pole and Substrate ground；Second pole of described second switch pipe NM2 and substrate are for connecing
Vdd voltage, and connect first pole plate of electric capacity of voltage regulation C3；The second pole plate ground connection of described electric capacity of voltage regulation C3；Described control electricity
Road Control is powered by VDD, and is modulated by system loop, and its first outfan is for controlling the work of power MOS pipe NM0
Making state, the most described control circuit Control detection vdd voltage value, its second outfan is for controlling the first switching tube
The duty of NM1；The grid of described power MOS pipe NM0 connects the first outfan of described control circuit Control,
The drain electrode that second pole adjusts pipe J1 with JFET is connected, the first pole and Substrate ground, the second of described power MOS pipe NM0
Pole is as chip output mouth, and the external inductance of sheet and Schottky diode, simultaneously as the power input of self-powered circuit.This
Invention, compared with traditional high-voltage power supply circuit, have employed a kind of high pressure self-powered circuit structure and the method for novelty, and chip saves
VCC energization pins, peripheral circuit is more simplified, and saves high voltage startup resistance and electric capacity of voltage regulation, system cost is low, volume
Little.Eliminating clamp diode and modulation circuit inside circuit, circuit structure is simple, and reliability is high, and chip area significantly reduces,
Chip cost and system cost are substantially reduced.Further, the high pressure self-powered circuit of band current limiting function, set up in system
In journey, charging current is restricted, and current value can keep constant, and vdd voltage linear rise effectively prevent in power up
Overshoot phenomenon and the excessive damage that device is caused of electric current.So, the present invention effectively overcomes various shortcoming of the prior art
And have high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (6)
1. a high pressure self-powered circuit, it is characterised in that described high pressure self-powered circuit includes: JFET adjust pipe, current-limiting resistance,
First switching tube, second switch pipe, electric capacity of voltage regulation, control circuit and power MOS pipe, wherein:
Described JFET adjusts grid and the Substrate ground of pipe, and drain electrode connects the second pole of power MOS pipe, and source electrode connects current limliting electricity
First end of resistance and the second pole of second switch pipe；Second pole and second of second termination the first switching tube of described current-limiting resistance
The grid of switching tube；The grid of described first switching tube is by control circuit control, the first pole and Substrate ground；Described second opens
Second pole of pass pipe and substrate are for connecing vdd voltage, and connect the first pole plate of electric capacity of voltage regulation；Second pole of described electric capacity of voltage regulation
Plate earthing；Described control circuit is powered by VDD, and is modulated by system loop, and its first outfan is used for controlling power
The duty of metal-oxide-semiconductor, the most described control circuit detection vdd voltage value, its second outfan is opened for controlling first
Close the duty of pipe；The grid of described power MOS pipe connects the first outfan of described control circuit, the second pole and JFET
The drain electrode adjusting pipe is connected, the first pole and Substrate ground.
High pressure self-powered circuit the most according to claim 1, it is characterised in that: the second pole of described power MOS pipe is as core
Sheet output port, the external inductance of sheet and Schottky diode, simultaneously as the power input of self-powered circuit.
High pressure self-powered circuit the most according to claim 1, it is characterised in that: described first switching tube, second switch pipe are
NMOS tube, its first extremely source electrode, second extremely drains.
High pressure self-powered circuit the most according to claim 1, it is characterised in that: described power MOS pipe is power NMOS tube,
Its first extremely source electrode, second extremely drains.
High pressure self-powered circuit the most according to claim 1, it is characterised in that also include current limliting detection resistance and Current limited Control pipe,
Wherein: the first end of described current limliting detection resistance is connected with the first pole, the grid of Current limited Control pipe of second switch pipe, second
End is connected with vdd voltage；Second pole of described Current limited Control pipe and the second end of current-limiting resistance, the grid of second switch pipe
Extremely being connected with the second of the first switching tube, grid is connected with the first pole of second switch pipe and the second end of current limliting detection resistance,
First pole is connected with vdd voltage with substrate.
High pressure self-powered circuit the most according to claim 5, it is characterised in that: described Current limited Control pipe is NMOS tube, its
First extremely source electrode, second extremely drains.
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| CN108233686A (en) * | 2018-03-09 | 2018-06-29 | 深圳深爱半导体股份有限公司 | It is integrated with the power management integrated circuit and electric power controller of power switch pipe |
| CN108347181A (en) * | 2017-01-25 | 2018-07-31 | 王俊杰 | A kind of power supply change-over device |
| CN109428474A (en) * | 2017-08-24 | 2019-03-05 | 通嘉科技股份有限公司 | High-voltage starting circuit and high-voltage charging control method |
| CN109787482A (en) * | 2018-04-04 | 2019-05-21 | 深圳市必易微电子有限公司 | Control chip and control method, constant pressure and flow device and isolation flyback PWM system |
| CN109922559A (en) * | 2017-12-13 | 2019-06-21 | 华润矽威科技（上海）有限公司 | A kind of constant-current control module, non-isolated reduction voltage circuit and constant current control method |
| CN112886837A (en) * | 2021-03-03 | 2021-06-01 | 昂宝电子（上海）有限公司 | Switching power supply and control chip thereof |
| CN116232040A (en) * | 2023-05-09 | 2023-06-06 | 苏州力生美半导体有限公司 | Switching power supply and control circuit thereof |
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| CN108347181A (en) * | 2017-01-25 | 2018-07-31 | 王俊杰 | A kind of power supply change-over device |
| CN108347181B (en) * | 2017-01-25 | 2020-02-07 | 芯好半导体(成都)有限公司 | Power supply conversion device |
| CN109428474A (en) * | 2017-08-24 | 2019-03-05 | 通嘉科技股份有限公司 | High-voltage starting circuit and high-voltage charging control method |
| CN109428474B (en) * | 2017-08-24 | 2021-03-23 | 通嘉科技股份有限公司 | High-voltage starting circuit and high-voltage charging control method |
| CN109922559A (en) * | 2017-12-13 | 2019-06-21 | 华润矽威科技（上海）有限公司 | A kind of constant-current control module, non-isolated reduction voltage circuit and constant current control method |
| CN109922559B (en) * | 2017-12-13 | 2021-04-27 | 华润微集成电路(无锡)有限公司 | Constant-current control module, non-isolated step-down circuit and constant-current control method |
| CN108233686A (en) * | 2018-03-09 | 2018-06-29 | 深圳深爱半导体股份有限公司 | It is integrated with the power management integrated circuit and electric power controller of power switch pipe |
| CN109787482A (en) * | 2018-04-04 | 2019-05-21 | 深圳市必易微电子有限公司 | Control chip and control method, constant pressure and flow device and isolation flyback PWM system |
| CN112886837A (en) * | 2021-03-03 | 2021-06-01 | 昂宝电子（上海）有限公司 | Switching power supply and control chip thereof |
| TWI785731B (en) * | 2021-03-03 | 2022-12-01 | 大陸商昂寶電子（上海）有限公司 | Switching power supply and its control chip |
| CN116232040A (en) * | 2023-05-09 | 2023-06-06 | 苏州力生美半导体有限公司 | Switching power supply and control circuit thereof |
| CN116232040B (en) * | 2023-05-09 | 2023-12-12 | 苏州力生美半导体有限公司 | Switching power supply and control circuit thereof |
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