CN106328330A - Method for manufacturing wafer type film resistor - Google Patents
Method for manufacturing wafer type film resistor Download PDFInfo
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- CN106328330A CN106328330A CN201510342903.2A CN201510342903A CN106328330A CN 106328330 A CN106328330 A CN 106328330A CN 201510342903 A CN201510342903 A CN 201510342903A CN 106328330 A CN106328330 A CN 106328330A
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Abstract
A method for manufacturing a wafer type film resistor includes the following two steps: a providing step and a resistor unit forming step, a substrate is provided in the providing step, the substrate comprises a first surface and a second surface opposite to the first surface. The resistor unit forming step is as follows: preparing a magnetic mask having a predetermined pattern and a magnetic fixing member, and the magnetic mask and the magnetic fixing member are respectively arranged on the second surface and the first surface of the substrate, so that the magnetic mask is adsorbed and fixed on the second surface of the substrate through the magnetic fixing member, the magnetic mask masks the second surface of the substrate for sputtering for forming at least one resistor unit. In the process of sputtering deposition, the magnetic mask is attached to the substrate through the magnetic force effect so as to ensure that the shape and position of the formed resistor unit can be consistent with the accuracy.
Description
Technical field
The present invention relates to the manufacture method of a kind of resistance, particularly relate to a kind of chip-type thin film
The manufacture method of resistance.
Background technology
The function of resistance is to reduce voltage, limit electric current, and general chip-type resistance is divided into thick film
Resistance and chip-type film resistor two kinds, generally speaking the thickness of thick-film resistor is more than 5 μm,
Mostly using screen printing technique to produce, the thickness of chip-type film resistor is then less than 1 μ
M, uses chemical deposition or the vacuum evaporation of physical deposition, magnetron sputtering and lithography mostly
Produce etc. technology.
For micro image etching procedure, it is first on a base material, one layer of resistive layer of formation of deposits,
Then, micro image etching procedure is used to form the chip-type thin film of a resistive layer with predetermined pattern
Resistance.But, the developer solution that micro image etching procedure uses has toxicity, therefore easily causes work
Industry personnel and the harm of environment, and equipment and maintenance cost are general the highest.
The another way the most often used, then be to utilize screen painting one to have predetermined pattern to make
For the mask layer of sputter, during deposition, directly deposit one in an insulated substrate and have one
The resistive layer of predetermined pattern.But, in this way during this resistive layer of formation of deposits, its resistive layer
Easily because the figure of this mask layer and size are easily deformed and cause quality bad, and should
Mask layer must be removed with chemistry or cleaning way after sputter, and its liquid waste processing can increase ring
The pollution in border.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of chip-type film resistor.
The manufacture method of chip-type film resistor of the present invention, comprises: one provides step, and one
Individual resistance unit forming step.
This offer step provides a substrate, and this substrate includes a first surface, and a phase
Anti-in the second surface of this first surface.
This resistance unit forming step prepares a magnetic shade with predetermined pattern, and one
Magnetic mount, is respectively arranged at the second of this substrate by this magnetic shade and this magnetic mount
Surface and first surface, make this magnetic shade adsorb be fixed on this base through this magnetic mount
The second surface of plate, then formed at least in the second surface sputter of this substrate through this magnetic shade
One resistance unit, this at least one resistance unit includes a resistive layer, and two to each other
Every positive conductor, this resistive layer electrically connects with this two positive conductor.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, wherein in this offer step,
Also define a plurality of first line of cut and a plurality of and described first from the first surface of this substrate to cut
The second line of cut that secant is vertical, wantonly two adjacent described first, second line of cut common definition
Going out a base board unit, this resistance unit forming step is in the second surface of described base board unit
Forming multiple resistance unit, the manufacture method of this chip-type film resistor also comprises one and is implemented on this
First cutting step after resistance unit forming step, second cutting step, and one
Individual termination electrode forming step, this first, second cutting step is respectively along described first, second
Line of cut is split this substrate and is obtained multiple semi-finished product, and this termination electrode forming step is each in this
Semi-finished product form one layer of outside weld unit covering described positive conductor, and are collectively forming with this positive conductor
One termination electrode, and obtain multiple chip-type film resistor.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, wherein this resistance unit is formed
In step, this at least one resistance unit also includes that one is respectively formed on this two positive conductor
Outside weld unit, described positive conductor and this outside weld unit collectively form a termination electrode.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, the most also comprise a back of the body and lead
Body unit forming step, a connection unit forming step, and a termination electrode forming step.
Before this back of the body conductor element forming step is implemented on this resistance unit forming step, in the of this substrate
One surface formed at least one the back of the body conductor element, this back of the body conductor element have two be spaced and
The back of the body conductor corresponding with described positive conductor.This connection unit forming step is the side from this substrate
Face is formed and allows one of back of the body conductor facing each other and positive conductor electrical connection to connect unit.This end electricity
Pole forming step forms one layer and covers this positive conductor, connection unit, and the outside weld unit of back of the body conductor,
And prepare this termination electrode.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, wherein in this offer step,
Also define a plurality of first line of cut and a plurality of and described first from the first surface of this substrate to cut
The second line of cut that secant is vertical, wantonly two adjacent described first, second line of cut common definition
Going out a base board unit, this back of the body conductor element forming step is to form multiple position in this first surface
In the back of the body conductor element of this each base board unit, wherein, each back of the body conductor element has two
Individual along this second line of cut, the back of the body conductor being spaced；This resistance unit forming step is in this
The second surface of substrate forms multiple resistance unit being positioned at this each base board unit, and this is each
Individual resistance unit includes a resistive layer, and two positive conductors relative with described back of the body conductor, and
The manufacture method of this chip-type film resistor also comprises one and is implemented on this connection unit formation step
One first cutting step before rapid, and one be implemented on this termination electrode forming step before second cut
Cutting step, this first cutting step is to split this substrate along described first line of cut, obtains multiple
Being respectively provided with the block of the strip of two long side surfaces, this connection unit forming step is then in often
The long side surface of one block forms this company allowing back of the body conductor facing each other and positive conductor electrically connect
Order unit, the second cutting step is to split described block along described second line of cut, obtains many
Individual semi-finished product, this termination electrode forming step is then to form one layer in each semi-finished product just to cover this
Conductor, connection unit and the outside weld unit of back of the body conductor, form this termination electrode, and obtain multiple crystalline substance
Chip film resistor.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, wherein this resistance unit is formed
Step also includes using a tool unit, and this magnetic shade, this substrate, and this magnetic is solid
Locking member is fastened in this tool unit jointly.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, the wherein material of this resistive layer
Selected from nickel chromium triangle compound, nickel chromium triangle aluminium compound, manganese aluminium compound.
It is preferred that the manufacture method of aforementioned wafer formula film resistor, wherein this resistance unit is formed
Step forms layer protective layer the most further on this resistance unit.
The beneficial effects of the present invention is: utilizing this magnetic shade with predetermined pattern to coordinate should
Magnetic mount so that during sputter deposits, it is possible to through magneticaction, allow this magnetic
Property shade be obedient to this substrate completely, therefore, deposition process be unlikely generation displacement, and
Can ensure that the shape of this resistance unit of formation, position all can meet its degree of accuracy.
Accompanying drawing explanation
Fig. 1 is a flow chart, illustrate chip-type film resistor of the present invention manufacture method one
One embodiment；
Fig. 2 is a three-dimensional exploded view, and resistive layer in the resistance unit of this first embodiment is described
Forming step；
Fig. 3 is a three-dimensional exploded view, and positive conductor in the resistance unit of this first embodiment is described
Forming step；
Fig. 4 is an axonometric chart, and the block obtained after one first cutting step is described, and through one
The semi-finished product obtained after second cutting step；
Fig. 5 is a schematic side view, and the chip-type film resistor that this first embodiment prepares is described；
Fig. 6 is a flow chart, illustrate chip-type film resistor of the present invention manufacture method one
Two embodiments；
Fig. 7 is a three-dimensional exploded view, and resistive layer in the resistance unit of this second embodiment is described
Forming step；
Fig. 8 is a three-dimensional exploded view, and positive conductor in the resistance unit of this second embodiment is described
Forming step；And
Fig. 9 is a schematic side view, and the chip-type film resistor that this second embodiment prepares is described.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the present invention is described in detail.
Refering to Fig. 1 and Fig. 2, the one first of the manufacture method of chip-type film resistor of the present invention is real
Execute example, an offer step 11, resistance unit forming step 12, a 1 first cutting step are provided
Rapid 13,1 second cutting step 14, and a termination electrode forming step 15.
This offer step 11 is to provide a substrate 21, this substrate include a first surface 211,
One in contrast to the second surface 212 of this first surface 211, and one with this first surface 211 and
The side 213 that this second surface 212 connects.
From the first surface 211 of this substrate 21 define a plurality of first line of cut X and a plurality of with
Described first the second vertical for line of cut X line of cut Y, wherein, appoints the most adjacent described the
One, second line of cut X, Y common definition goes out a base board unit 22.Specifically, described
First, second line of cut X, Y is respectively with a uniform distances distribution, and described base board unit
22 are into checkerboard adjacent distributions.
Referring again to Fig. 1 to Fig. 3, this resistance unit forming step 12 is in this second surface 212
Sputter forms multiple resistance unit 24, and each this resistance unit 24 includes a resistive layer
242, and two positive conductors 241 being spaced, wherein, this resistive layer 242 and this two positive conductor
241 electrical connections.
In detail, this resistance unit forming step 12 first arranges one in order to form described resistance
Layer 242 the first magnetic shade 311 on the second surface 212 of described base board unit 22,
And it is arranged at the magnetic mount 32 of this first surface 211 by this first magnetic shade through one
311 are adsorbed in this substrate 21, obtain one first transient structures.And then, a tool is recycled
This first transient structures is fixed by unit 33, and with this first magnetic shade 311 for sputter screen
Cover, utilize sputtering way, form multiple being spaced along described first line of cut X-direction respectively
And after being covered in the resistive layer 242 on described base board unit 22 surface, remove this tool list respectively
Unit 33 and this first magnetic shade 311.
Then, one is arranged in order to form the second magnetic shade 312 of described positive conductor 241 in institute
State on resistive layer 242, and be arranged at the magnetic mount 32 of this first surface 211 through this
This second magnetic shade 312 is adsorbed in this substrate 21, obtains one second transient structures, immediately
, recycle this tool unit 33 and this second transient structures is fixed, and with this second magnetic
Shade 312 be sputter shielding, utilize sputtering way, formed multiple in array arrangement and to each other
Every positive conductor 241 (Fig. 3 is represent via this second magnetic shade 312 sputter with imaginary line
After, the anticipated position formed of described positive conductor 241) after, remove respectively this tool unit 33 and
This second magnetic shade 312.
To be remarked additionally, after forming described positive conductor 241, can be respectively to this each resistance
Layer 242 carries out resistance finishing in the way of laser cutting, has more accurate resistance to obtain
The resistive layer 242 of value, is trimmed to, owing to resistive layer carrying out resistance, the skill that the art is conventional
Art method, therefore, no longer adds explanation.
Coordinate refering to Fig. 4, before this first cutting step 13, can be prior to this resistive layer 242
The surface exposed forms layer protective layer 25, then, just performs this first cutting step 13,
Cut along this first cut-off rule X and obtain a plurality of strip block 4 as shown in Figure 4, subsequently,
Perform this second cutting step 14, split this block 4 along described second line of cut Y and obtain many
The individual semi-finished product 40 with this protective layer 25.
Then carry out this termination electrode forming step 15, utilize barrel plating mode, each half one-tenth in this
Described positive conductor 241 surface of product 40 forms an outside weld unit 260 as shown in Figure 5.This is outer
Weld the visual demand of unit 260 and be single or multiple lift structure, this outside weld unit 260 in Fig. 5
It is that the double-decker being made up of a nickel metal layer 262 and a tin metal layer 263 explains；Wherein,
This positive conductor 241, this nickel metal layer 262 and this tin metal layer 263 are collectively forming one end electricity
Pole 26, and collectively form this wafer with this substrate 21, this resistive layer 242 and this protective layer 25
Formula film resistor 5.
It is noted that this protective layer 25 is to protect this resistive layer 242, to avoid because of system
Collide in journey or pollute and cause the damage of this resistive layer 242, and this protective layer 25 can be
Formed when this resistance unit forming step 12, it is also possible to be after this first cutting step 13,
This protective layer is formed above this resistive layer 242 barish of this each block 4
25, then carry out this second cutting step 14, carry out this termination electrode forming step 15 the most again,
In described positive conductor 241 surface, sequentially form this nickel metal layer 262 and tin metal layer 263,
The most available chip-type film resistor 5 as shown in Figure 5.Additionally, this protective layer 25
Thickness be not more than the thickness of this termination electrode 26, this chip-type after preparing therefore can be made thin
Membrane resistance 24 may utilize this termination electrode 26 and directly electrically connects with a circuit board (not shown).
To be remarked additionally, this first, second magnetic shade 311,312 aforementioned mainly selects
Material be the magnetic materials such as ferrum, cobalt, nickel；The material of this magnetic mount 32 is permanent
Magnet or temporary magnet, and it is preferred that this magnetic mount 32 form fit this first,
The shape of two magnetic shades 311,312 is arranged, and has preferably magnetic adsorptive power；And it is described
The material of resistive layer 242 selected from nickel chromium triangle compound, nickel chromium triangle aluminum silicon compound, nickel chromium triangle silicon compound,
Chrome-silicon compound, copper-manganese nickel compound, copper-manganese tin compound；The material of described positive conductor 241
Selected from silver, copper, gold or its alloy；The material that described protective layer 25 is used is usually epoxy
Resin or acryl resin.
This tool unit 33 aforementioned can fix this first, second magnetic by screw lock, the mode such as chimeric
Property shade 311,312, this substrate 21, and this magnetic mount 32.It is noted that this
The purpose of tool unit 33 be allow further this first, second magnetic shade 311,312,
This substrate 21, and this magnetic mount 32 is fixing so that it is will not move, in order to increase sputter
On accuracy, therefore, process tool not necessarily, it is possible to do not use this to control depending on processing procedure
Tool unit 33.
This chip-type film resistor 5 utilizes this first, second magnetic shade 311,312 and is somebody's turn to do
The collocation of magnetic mount 32, it is possible to be easily formed all accurate resistance list in shape, position
Unit 24, and processing procedure is simple, easily implements.Additionally, this chip-type film resistor 5 can be with
Described termination electrode is directly and this circuit board contacts so that an electric current can be from an effluent of this termination electrode
Through this resistive layer 242, pass through the opposite side of this termination electrode and form the loop of a conducting.
It is noted that this first embodiment aforementioned is to make multiple wafer with single processing procedure simultaneously
Explain as a example by formula film resistor 5, when to make single chip-type film resistor 5, because of
For only making single resistance unit 24, therefore, need not perform this first, second cutting step
13、14。
Refering to Fig. 6 to Fig. 8, the one second of the manufacture method of chip-type film resistor of the present invention is real
Execute example, an offer step 61, back of the body conductor element forming step 62, resistance unit are provided
Forming step 63,1 first cutting step 64, connects unit forming step 65,1 second
Cutting step 66, and a termination electrode forming step 67.
This offer step 61 is identical with the offer step 11 of this first embodiment, is to provide one
Have and gone out multiple base board unit 22 by a plurality of first, second line of cut X, Y common definition
Substrate 21, owing to the definition of described substrate list 22 is identical with this first embodiment, no longer adds
Explanation.
This back of the body conductor element forming step 62 is to be formed many in the first surface 211 of this substrate 21
The back of the body conductor element 23 that individual and described base board unit 22 is corresponding.Wherein, each back of the body conductor list
Unit 23 has two back of the body conductors 231 being spaced along this second line of cut Y-direction.
Described back of the body conductor 231 can be formed in the way of using sputter, evaporation, screen painting, and
Described back of the body conductor 231 uses conductive material, as silver, copper or nichrome etc. are constituted.
This resistance unit forming step 63, is to be formed multiple in the surface of described base board unit 22
Resistance unit 24.Specifically, this resistance unit forming step 63 is that first preparation has predetermined
Pattern and in order to form one the 3rd magnetic shade 313 of described resistive layer 242, by the 3rd magnetic
Property shade 313 and this magnetic mount 32 are placed in this second surface 212 and the first table respectively
Face 211, makes the 3rd magnetic shade 313 be fixed on this base through the absorption of this magnetic mount 32
The second surface 212 of plate 21, obtains one the 3rd transient structures, and utilizes this tool unit 33
3rd transient structures is fixed fixing, then in the way of sputter, through the 3rd magnetic shade
313 form multiple resistive layer 242 in the second surface 212 of this substrate 21.
Then, coordinate refering to Fig. 8 and Fig. 9, the 3rd transient structures is removed this tool unit
33, and remove this first magnetic shade 313, change and arrange one and have and described back of the body conductor 231 figure
Predetermined pattern that case is corresponding and in order to form the 4th magnetic shade 314 of described positive conductor 241
In this second surface 212, and it is adsorbed in the second of this substrate 21 through this magnetic mount 32
Surface 212, obtains one the 4th transient structures, and and then, recycling this tool unit 33 should
4th transient structures fixes, and shields with the 4th magnetic shade 314 for sputter, utilizes sputter
This resistive layer 242 upper that mode deposits in the second surface 212 of each base board unit 22
Side, forms two positive conductors 241 carrying on the back conductors 231 relative to two；Then, this tool is removed
Unit 33, and the 4th magnetic shade 314 and this magnetic mount 32, then, such as Fig. 9
Shown in, at described barish resistive layer 242, and form one layer above this positive conductor 241
Protective layer 25.The constituent material of this resistive layer 242 aforementioned and this positive conductor 241 and this first reality
Execute example identical, therefore no longer add to repeat.
Similarly, this tool unit 33 aforementioned can fix the 3rd by screw lock, the mode such as chimeric,
4th magnetic shade 313,314, this substrate 21, and this magnetic mount 32.To be illustrated
Be, the purpose of this tool unit 33 be allow further the three, the 4th magnetic shades 313,
314, this substrate 21, and this magnetic mount 32 is fixing so that it is will not move, in order to increase
Accuracy on sputter, therefore, process tool not necessarily, it is possible to do not use depending on processing procedure
This tool unit 33.
Then, this first cutting step 64, it is same as the first cutting step of this first embodiment
13, it is to split this substrate 21 along described first line of cut X, obtains the most several being respectively provided with two
The block 4 of the strip of individual long side surface.Owing to this step is (aobvious with aforementioned first cutting step 13
It is shown in Fig. 4) identical, the most still further illustrate.
Then, this connection unit forming step 65 is carried out, in each in the way of sputter, evaporation
The long side surface of individual block forms a connection unit 261.In the present embodiment, this connection unit 261
It is to explain as a example by forming one layer of side conductor from the long side surface of this each block 4.Wherein,
The material of this connection unit 261 is the conductive materials such as silver, copper or nichrome.
Then, carry out this second cutting step 66, split institute along described second line of cut Y
State block 4, obtain multiple semi-finished product 40.Same, due to this step and aforementioned second cutting
Step 14 (being shown in Fig. 4) is identical, the most still further illustrates.Finally carry out this termination electrode and form step
Rapid 67, utilize barrel plating mode, sequentially form this positive conductor of covering in these each semi-finished product 40
241, an outside weld unit 260 of back of the body conductor 231 and connection unit 261 prepares this termination electrode 26,
I.e. can get multiple chip-type film resistor 7 as shown in Figure 9.In the present embodiment, this is outer
Weldering unit 260 is to be collectively formed with one layer of tin metal layer 263 by one layer of nickel metal layer 262, should
Termination electrode 26 is by described positive conductor 241, back of the body conductor 231, connects unit 261, and this is outer
Weldering unit 260 (nickel metal layer 262, tin metal layer 263) collectively forms.And by being formed at this
This outside weld unit 260 (nickel gold on positive conductor 241, back of the body conductor 231 and connection unit 261 surface
Belong to layer 262, tin metal layer 263), may be used to protect each conductor layer, and there is sulfuration resistant, resist
The functions such as corrosivity.Additionally, this chip-type film resistor 7 can use near these two positive conductors
241 or these two the back of the body conductors 231 termination electrodes 26 with the external world circuit board (not shown) be electrically connected
Connect.When the termination electrode 26 using close described positive conductor 241 electrically connects with circuit board, meeting
Make thicker termination electrode 26, and allow the thickness of this protective layer 25 be not more than this termination electrode 26
Thickness, it is thus possible to be electrically connected to smoothly on circuit board.In the present embodiment, it is with close
The termination electrode 26 of described back of the body conductor 231 electrically connects with circuit board, therefore, and this protective layer 25
Thickness is can be more than the thickness of this termination electrode 26.
What deserves to be explained is, if in this resistance unit forming step 63, changing this resistive layer
242 with the formation of positive conductor 241 order, also can prepare this chip-type film resistor 7, simply
This resistive layer 242 becomes this two positive conductors 241 with the connected mode of described positive conductor 241
Between this resistive layer 242 and this substrate 21.
It is noted that this second embodiment aforementioned is to make multiple wafer with single processing procedure simultaneously
Explain as a example by formula film resistor 7, when to make single chip-type film resistor 7, because of
For only making single resistance unit, the most need not perform this first, second cutting step 64,
66。
In sum, the present invention utilize make this first to fourth magnetic shade 311,312,313,
314 adsorb through this magnetic mount 32 and to be fixed on the second surface 212 of this substrate 21,
Therefore can make by this first to fourth magnetic shade 311,312,313,314 sputter shape
The pattern become has accurate shape and position.
Claims (8)
1. the manufacture method of a chip-type film resistor, it is characterised in that: comprise:
One provides step, it is provided that a substrate, and this substrate includes a first surface, and
One second surface in contrast to this first surface；And
One resistance unit forming step, prepares a magnetic shade with predetermined pattern,
And a magnetic mount, this magnetic shade and this magnetic mount are respectively arranged at this base
The second surface of plate and first surface, make this magnetic shade adsorb through this magnetic mount
It is fixed on the second surface of this substrate, then through this magnetic shade in the second surface of this substrate
Sputter forms at least one resistance unit, and this at least one resistance unit includes a resistive layer,
And two positive conductors being spaced, this resistive layer electrically connects with this two positive conductor.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: in this offer step, also define a plurality of first line of cut from the first surface of this substrate
And the second line of cut that a plurality of and described first line of cut is vertical, wantonly two adjacent described first,
Second line of cut common definition goes out a base board unit, and this resistance unit forming step is in institute
The second surface stating base board unit forms multiple resistance unit, the system of this chip-type film resistor
Method of making also comprises one and is implemented on one first after this resistance unit forming step cutting step
Suddenly, second cutting step, an and termination electrode forming step, this first, second is cut
Cutting step is to split this substrate along described first, second line of cut respectively and obtain multiple half and become
Product, this termination electrode forming step is to form one layer in these each semi-finished product to cover described positive conductor
Outside weld unit, and be collectively forming a termination electrode with this positive conductor, and obtain multiple chip-type
Film resistor.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: in this resistance unit forming step, this at least one resistance unit also includes a difference
It is formed at the outside weld unit on this two positive conductor, described positive conductor and this common structure of outside weld unit
Become a termination electrode.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: also comprise:
One back of the body conductor element forming step, before being implemented on this resistance unit forming step, in
The first surface of this substrate forms at least one back of the body conductor element, and this back of the body conductor element has two
Individual it is spaced and the back of the body conductor corresponding with described positive conductor；
One connect unit forming step, this substrate also include one with this first surface and this
The side that second surface connects, this connection unit forming step is to be formed from the side of this substrate
One that allows back of the body conductor facing each other and positive conductor electrically connect connects unit；And
One termination electrode forming step, forms one layer and covers this positive conductor, connection unit, and
The outside weld unit of back of the body conductor, and prepare this termination electrode.
The most according to claim 4, the manufacture method of chip-type film resistor, its feature exists
In: in this offer step, also define a plurality of first line of cut from the first surface of this substrate
And the second line of cut that a plurality of and described first line of cut is vertical, wantonly two adjacent described first,
Second line of cut common definition goes out a base board unit, this back of the body conductor element forming step be in
This first surface forms multiple back of the body conductor element being positioned at this each base board unit, wherein,
Each back of the body conductor element has two along this second line of cut, the back of the body conductor being spaced；
This resistance unit forming step is to be formed in the second surface of this substrate multiple to be positioned at this each
The resistance unit of base board unit, this each resistance unit includes a resistive layer, and two
The positive conductor relative with described back of the body conductor, and the manufacture method of this chip-type film resistor also wraps
It is implemented on one first cutting step before this connection unit forming step, and a reality containing one
Imposing on the second cutting step before this termination electrode forming step, this first cutting step is along institute
State the first line of cut and split this substrate, obtain multiple strip being respectively provided with two long side surfaces
Block, this connection unit forming step is then to be formed in the long side surface of each block to allow two
Two relative back of the body conductors and this connection unit of positive conductor electrical connection, the second cutting step is edge
Described second line of cut and split described block, obtain multiple semi-finished product, this termination electrode is formed
Step is then to form one layer of this positive conductor of covering, connection unit and the back of the body in each semi-finished product to lead
The outside weld unit of body, forms this termination electrode, and obtains multiple chip-type film resistor.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: this resistance unit forming step also includes using a tool unit, by this magnetic shade,
This substrate, and this magnetic mount is fastened in this tool unit jointly.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: the material of this resistive layer is selected from nickel chromium triangle compound, nickel chromium triangle aluminium compound, manganese aluminium compound.
The most according to claim 1, the manufacture method of chip-type film resistor, its feature exists
In: this resistance unit forming step forms layer protective layer the most further on this resistance unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510342903.2A CN106328330A (en) | 2015-06-19 | 2015-06-19 | Method for manufacturing wafer type film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510342903.2A CN106328330A (en) | 2015-06-19 | 2015-06-19 | Method for manufacturing wafer type film resistor |
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| CN106328330A true CN106328330A (en) | 2017-01-11 |
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| CN201510342903.2A Pending CN106328330A (en) | 2015-06-19 | 2015-06-19 | Method for manufacturing wafer type film resistor |
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| JPH10135013A (en) * | 1996-10-31 | 1998-05-22 | Taiyo Yuden Co Ltd | Manufacture of chip part |
| CN1395734A (en) * | 2000-01-17 | 2003-02-05 | 松下电器产业株式会社 | Resistor and method for fabricating the same |
| TW200725701A (en) * | 2005-12-16 | 2007-07-01 | Samsung Sdi Co Ltd | Deposition apparatus |
| CN101430955A (en) * | 2007-11-09 | 2009-05-13 | 国巨股份有限公司 | Wafer resistor element and manufacturing method thereof |
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2015
- 2015-06-19 CN CN201510342903.2A patent/CN106328330A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135013A (en) * | 1996-10-31 | 1998-05-22 | Taiyo Yuden Co Ltd | Manufacture of chip part |
| CN1395734A (en) * | 2000-01-17 | 2003-02-05 | 松下电器产业株式会社 | Resistor and method for fabricating the same |
| TW200725701A (en) * | 2005-12-16 | 2007-07-01 | Samsung Sdi Co Ltd | Deposition apparatus |
| CN101430955A (en) * | 2007-11-09 | 2009-05-13 | 国巨股份有限公司 | Wafer resistor element and manufacturing method thereof |
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