CN106315656B - A kind of preparation method and applications of the nano oxidized dysprosium of graphene coated - Google Patents

A kind of preparation method and applications of the nano oxidized dysprosium of graphene coated Download PDF

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CN106315656B
CN106315656B CN201610623761.1A CN201610623761A CN106315656B CN 106315656 B CN106315656 B CN 106315656B CN 201610623761 A CN201610623761 A CN 201610623761A CN 106315656 B CN106315656 B CN 106315656B
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dysprosium
dysprosia
graphene
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CN106315656A (en
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金利华
王耀
冯建情
李成山
刘国庆
刘浩然
熊晓梅
王庆阳
杨芳
张平祥
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Northwest Institute for Non Ferrous Metal Research
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Abstract

The invention provides a kind of preparation method of the nano oxidized dysprosium of graphene coated, this method comprises the following steps:First, dysprosia nano particle is prepared using pyrolysismethod;2nd, dysprosia nano-pillar is prepared using hydro-thermal method;3rd, graphene oxide solution is prepared;4th, dysprosia nano particle and dysprosia nano-pillar are added in graphene oxide solution, filtered after stirring, obtain filter residue, the filter residue is by being thermally treated resulting in the nano oxidized dysprosium of graphene coated.A kind of in addition, application present invention also offers nano oxidized dysprosium of graphene coated prepared using the above method during binary doped magnesium diboride superconductive bulk is prepared.Present invention process method is simple, using the graphene with high surface area as coating, be advantageous to dysprosia nano particle and dysprosia nano-pillar is evenly dispersed on graphene, reunion is not produced, and is advantageous to improve binary doped magnesium diboride superconductive bulk in low field and High-Field lower critical current density, J c performances.

Description

A kind of preparation method and applications of the nano oxidized dysprosium of graphene coated
Technical field
The invention belongs to high temperature superconducting materia technical field, and in particular to a kind of preparation of the nano oxidized dysprosium of graphene coated Method and its application.
Background technology
Rare earth oxide dysprosia (Dy2O3) there are excellent physicochemical properties, it is widely used in catalysis material, hair In the fields such as luminescent material, solid fuel cell, pinning magnesium diboride superconductive.When the size of dysprosia particle gradually decreases to nanometer Size, specific surface area increase produce skin effect, and the surface texture difference of nano oxidized dysprosium causes its reactivity also inconsistent. In traditional preparation method, nano-oxide is easily reunited, and the more difficult surface for obtaining high activity.
Meanwhile for magnesium diboride super conductive material, in order to improve the performance under magnetic field of mgb 2 superconductor, it is necessary to By introducing effective pinning center.In conventional methods where, generally use single-element or the doping of hydrocarbon organic matter, such as element C etc., improve magnesium diboride High-Field lower critical current density, J c performances.But general all its activity of doped source are relatively low, degree of scatter Difference is, it is necessary to which higher heat treatment temperature could introduce effective doping, and skewness, it is easy to reunites in grain boundaries, Reduce intercrystalline connectivity.Therefore, nano oxidized dysprosium dispersiveness and activity are improved by graphene coated powder, are introduced into Into magnesium diboride, realize binary doped, can greatly improve superconductivity.
The content of the invention
The technical problems to be solved by the invention are to be directed to above-mentioned the deficiencies in the prior art, there is provided a kind of graphene bag Cover the preparation method of nano oxidized dysprosium.The preparation method is simple, it is easy to accomplish industrialization, using graphene as coating, its With higher surface area, be advantageous to dysprosia nano particle and dysprosia nano-pillar is evenly dispersed on graphene, do not produce It is raw to reunite, and the dysprosia nano particle and dysprosia nano-pillar that prepare have different morphologies and the crystal face of high activity, favorably Binary doped magnesium diboride superconductive bulk is prepared in being subsequently applied to.
In order to solve the above technical problems, the technical solution adopted by the present invention is:A kind of nano oxidized dysprosium of graphene coated Preparation method, it is characterised in that this method comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 0.1 DEG C/min~10 DEG C/min of heating rate, obtains dysprosia nano particle;The mixing The volume ratio of ethanol and propionic acid is 1 in solvent:1;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of tert-butylamine or the aqueous solution of amion acetic acid, water is subsequently placed in In thermal response kettle, dysprosia nano-pillar is obtained after hydro-thermal reaction;Tert-butylamine and water in the aqueous solution of the tert-butylamine Volume ratio is 1:(4~10);The volume ratio of the Ammonia In Aqueous Solution guanidine-acetic acid water of the amion acetic acid is 1:(4~10);
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:(50~100);Institute The concentration for stating graphene oxide in graphene oxide solution is 0.5mg/mL~10mg/mL;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:(1~ 3) it is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by institute Filter residue is stated to be placed in heat-treatment furnace, under inert gas shielding, temperature be 400 DEG C~800 DEG C under conditions of be heat-treated 0.5h~ 5h, obtain the nano oxidized dysprosium of graphene coated.
The preparation method of the above-mentioned nano oxidized dysprosium of a kind of graphene coated, it is characterised in that heated up described in step 1 Speed is 1 DEG C/min~3 DEG C/min.
The preparation method of the above-mentioned nano oxidized dysprosium of a kind of graphene coated, it is characterised in that moist described in step 1 Oxygen atmosphere in oxygen volumn concentration be 94%~99.4%, surplus is steam.
A kind of preparation method of the above-mentioned nano oxidized dysprosium of graphene coated, it is characterised in that hydro-thermal described in step 2 The temperature of reaction is 120 DEG C~220 DEG C, and the reaction time of the hydro-thermal reaction is 1h~10h.
The preparation method of the above-mentioned nano oxidized dysprosium of a kind of graphene coated, it is characterised in that aoxidized described in step 4 The ratio between the quality of graphene oxide and the gross mass of dysprosia nano particle and dysprosia nano-pillar mixture in graphene solution For 1:(50~100).
The preparation method of the above-mentioned nano oxidized dysprosium of a kind of graphene coated, it is characterised in that stirred described in step 4 Speed be 100r/min~1000r/min, the time of stirring is 2min~10min.
Meanwhile the nano oxidized dysprosium of graphene coated prepared with the aforedescribed process present invention also offers a kind of profit should With, it is characterised in that the nano oxidized dysprosium of graphene coated is used to prepare binary doped magnesium diboride superconductive bulk, specific system It is for process:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2:(0.01~ 0.2) ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 1h~3h under conditions of being 750 DEG C~850 DEG C, obtains binary doped magnesium diboride superconductive bulk.
Above-mentioned application, it is characterised in that the quality purity of the magnesium powder and boron powder is not less than 99%, the high-purity argon The quality purity of gas is 99.99%.
Above-mentioned application, it is characterised in that the pressure of the compacting is 10MPa~20MPa.
The present invention has advantages below compared with prior art:
1st, the present invention prepares dysprosia nano particle and dysprosia nano-pillar, and uses graphene coated dysprosia nanometer Particle and dysprosia nano-pillar, dysprosia nano-pillar can strut the graphene of layer structure, so that dysprosia nano particle quilt It is coated in the layer structure of graphene, is advantageous to dysprosia nano particle and dysprosia nano-pillar is dispersed in graphene On, fully inhibit the generation of nano-particle reunion.Meanwhile the crystal face (222) of dysprosia nano-pillar is high activity crystal face, application Its superconductivity can be improved in preparing binary doped magnesium diboride superconductive bulk.
2nd, the present invention itself has high surface area and reactivity using graphene as coating.Using first wrapping The processing method cover, restored, be advantageous to dysprosia nanometer and fully combined with graphene and dispersed.Meanwhile graphene sheet Body, which is alternatively, to be subsequently applied to when preparing binary doped magnesium diboride superconductive bulk as carbon doping source, can more improve magnesium diboride Superconductivity.
3rd, the present invention can keep the high activity crystal face of nano oxidized dysprosium, be advantageous to the nano oxidized dysprosium of follow-up graphene coated Applied to binary doped magnesium diboride superconductive bulk is prepared, the reactivity of dysprosium doped thing is improved, phase temperature can be reduced into, more It is easily accessible the lattice of magnesium diboride.Two kinds of different-shapes and the doping particle dysprosia of size are more beneficial for surpassing in magnesium diboride Filling in guide block material, improve superconductivity.
4th, preparation method of the present invention is simple, it is easy to accomplish industrialization.
Technical scheme is described in further detail below by drawings and examples.
Brief description of the drawings
Fig. 1 is the scanning electron microscope (SEM) photograph of the nano oxidized dysprosium of graphene coated prepared by the embodiment of the present invention 1.
Embodiment
Embodiment 1
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 2 DEG C/min of heating rate, obtains dysprosia nano particle;The in the mixed solvent ethanol and The volume ratio of propionic acid is 1:1;The volumn concentration of oxygen is 96.5% in the moist oxygen atmosphere, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of tert-butylamine, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The volume ratio of tert-butylamine and water is 1 in the aqueous solution of the tert-butylamine:7;The hydro-thermal is anti- The temperature answered is 170 DEG C, and the reaction time of the hydro-thermal reaction is 5.5h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:75;The oxidation The concentration of graphene oxide is 5mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:2 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 2.5h under conditions of being 600 DEG C, obtains graphene bag Cover nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nanometer in the graphene oxide solution The ratio between gross mass of post mixture is 1:100;The speed of the stirring is 550r/min, and the time of stirring is 6min.
Fig. 1 is the scanning electron microscope (SEM) photograph of the nano oxidized dysprosium of graphene coated prepared by the embodiment of the present invention 1, can from figure Going out a nanometer dysprosia has two kinds of patterns of graininess and column, illustrates to be prepared into by above-mentioned steps one and arrives dysprosia nanometer Grain, has been prepared dysprosia nano-pillar, and dysprosia nano particle and dysprosia nano-pillar can be equal by above-mentioned steps two It is scattered in evenly in the layer structure of graphene, is also not present and significantly reunites.It can be seen that dysprosia nano particle Particle diameter be 10nm~100nm, the length of dysprosia nano-pillar is 300nm~500nm, the diameter 10nm of dysprosia nano-pillar~ 30nm, the open and flat ungauged regions of graphene are reunited, and are shown as single-layer graphene.
Meanwhile the nano oxidized dysprosium of graphene coated prepared by embodiment 1 can enter magnesium diboride lattice as doped source, Improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.1 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 2h under conditions of being 800 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 10MPa.
In 20K, 1T, critical current density jc reaches binary doped magnesium diboride superconductive bulk prepared by the above method 1.2×105A/cm2
Embodiment 2
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 5 DEG C/min of heating rate, obtains dysprosia nano particle;The in the mixed solvent ethanol and The volume ratio of propionic acid is 1:1;The volumn concentration of oxygen is 94% in the moist oxygen atmosphere, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of amion acetic acid, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The Ammonia In Aqueous Solution guanidine-acetic acid of the amion acetic acid and the volume ratio of water are 1:4;The hydro-thermal is anti- The temperature answered is 120 DEG C, and the reaction time of the hydro-thermal reaction is 10h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:50;The oxidation The concentration of graphene oxide is 0.5mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:1 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 5h under conditions of being 400 DEG C, obtains graphene coated Nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nano-pillar in the graphene oxide solution The ratio between gross mass of mixture is 1:85;The speed of the stirring is 100r/min, and the time of stirring is 10min.
Meanwhile the nano oxidized dysprosium of graphene coated manufactured in the present embodiment can enter magnesium diboride lattice as doping Source, improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.01 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 3h under conditions of being 750 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 15MPa.
For binary doped magnesium diboride superconductive bulk prepared by the above method in 20K, 1T, critical current density jc reaches 1 ×105A/cm2
Embodiment 3
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 1 DEG C/min of heating rate, obtains dysprosia nano particle;The in the mixed solvent ethanol and The volume ratio of propionic acid is 1:1;The volumn concentration of oxygen is 99.4% in the moist oxygen atmosphere, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of tert-butylamine, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The volume ratio of tert-butylamine and water is 1 in the aqueous solution of the tert-butylamine:10;The hydro-thermal The temperature of reaction is 220 DEG C, and the reaction time of the hydro-thermal reaction is 1h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:100;The oxidation The concentration of graphene oxide is 10mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:3 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 0.5h under conditions of being 800 DEG C, obtains graphene bag Cover nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nanometer in the graphene oxide solution The ratio between gross mass of post mixture is 1:75;The speed of the stirring is 1000r/min, and the time of stirring is 2min.
Meanwhile the nano oxidized dysprosium of graphene coated manufactured in the present embodiment can enter magnesium diboride lattice as doping Source, improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.2 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 1h under conditions of being 850 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 20MPa.
For binary doped magnesium diboride superconductive bulk prepared by the above method in 20K, 1T, critical current density jc reaches 7 ×104A/cm2
Embodiment 4
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 0.1 DEG C/min of heating rate, obtains dysprosia nano particle;The in the mixed solvent ethanol Volume ratio with propionic acid is 1:1;The volumn concentration of oxygen is 94% in the moist oxygen atmosphere, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of amion acetic acid, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The Ammonia In Aqueous Solution guanidine-acetic acid of the amion acetic acid and the volume ratio of water are 1:8;The hydro-thermal is anti- The temperature answered is 220 DEG C, and the reaction time of the hydro-thermal reaction is 8h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:100;The oxidation The concentration of graphene oxide is 3mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:2 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 3h under conditions of being 600 DEG C, obtains graphene coated Nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nano-pillar in the graphene oxide solution The ratio between gross mass of mixture is 1:85;The speed of the stirring is 800r/min, and the time of stirring is 4min.
Meanwhile the nano oxidized dysprosium of graphene coated manufactured in the present embodiment can enter magnesium diboride lattice as doping Source, improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.15 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 2h under conditions of being 700 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 15MPa.
For binary doped magnesium diboride superconductive bulk prepared by the above method in 20K, 1T, critical current density jc reaches 1 ×105A/cm2
Embodiment 5
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then in the oxygen atmosphere of humidity Under, 500 DEG C are continuously heating to by 10 DEG C/min of heating rate, obtains dysprosia nano particle;The in the mixed solvent ethanol Volume ratio with propionic acid is 1:1;The volumn concentration of oxygen is 96% in the moist oxygen atmosphere, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of tert-butylamine, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The volume ratio of tert-butylamine and water is 1 in the aqueous solution of the tert-butylamine:6;The hydro-thermal is anti- The temperature answered is 150 DEG C, and the reaction time of the hydro-thermal reaction is 5h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:60;The oxidation The concentration of graphene oxide is 7mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:3 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 4h under conditions of being 700 DEG C, obtains graphene coated Nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nano-pillar in the graphene oxide solution The ratio between gross mass of mixture is 1:50;The speed of the stirring is 300r/min, and the time of stirring is 8min.
Meanwhile the nano oxidized dysprosium of graphene coated manufactured in the present embodiment can enter magnesium diboride lattice as doping Source, improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.1 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 3h under conditions of being 850 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 20MPa.
For binary doped magnesium diboride superconductive bulk prepared by the above method in 20K, 1T, critical current density jc reaches 9 ×104A/cm2
Embodiment 6
The method that the present embodiment prepares the nano oxidized dysprosium of graphene coated comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium Solution is placed in pyrolysis reactor furnace, is carried out drying and processing under conditions of being first 120 DEG C in temperature, is then in water vapor partial pressure Under 2000Pa moist oxygen atmosphere, 500 DEG C are continuously heating to by 7.5 DEG C/min of heating rate, obtains dysprosia nanometer Particle;The volume ratio of the in the mixed solvent ethanol and propionic acid is 1:1;The volume hundred of oxygen in the moist oxygen atmosphere It is 98% to divide content, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of amion acetic acid, it is subsequently placed in hydrothermal reaction kettle, through hydro-thermal reaction After obtain dysprosia nano-pillar;The Ammonia In Aqueous Solution guanidine-acetic acid of the amion acetic acid and the volume ratio of water are 1:7;The hydro-thermal is anti- The temperature answered is 200 DEG C, and the reaction time of the hydro-thermal reaction is 7h.
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, obtain aoxidizing stone Black alkene solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:80;The oxidation The concentration of graphene oxide is 10mg/mL in graphene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:1 It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and under inert gas shielding, temperature is heat-treated 2h under conditions of being 800 DEG C, obtains graphene coated Nano oxidized dysprosium;The quality of graphene oxide and dysprosia nano particle and dysprosia nano-pillar in the graphene oxide solution The ratio between gross mass of mixture is 1:65;The speed of the stirring is 1000r/min, and the time of stirring is 5min.
Meanwhile the nano oxidized dysprosium of graphene coated manufactured in the present embodiment can enter magnesium diboride lattice as doping Source, improve superconductivity.
The nano oxidized dysprosium of graphene coated manufactured in the present embodiment is applied to prepare binary doped magnesium diboride superconductive bulk, Specifically preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2: 0.07 ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, protected in high-purity argon gas atmosphere Under shield, temperature is heat-treated 2h under conditions of being 800 DEG C, obtains binary doped magnesium diboride superconductive bulk;The magnesium powder and boron powder Quality purity be not less than 99%, the quality purity of the high-purity argon gas is 99.99%;The pressure of the compacting is 15MPa.
For binary doped magnesium diboride superconductive bulk prepared by the above method in 20K, 1T, critical current density jc reaches 8 ×104A/cm2
It is described above, only it is presently preferred embodiments of the present invention, any restrictions is not done to the present invention, it is every according to invention skill Any simple modification, change and the equivalent structure change that art is substantially made to above example, still fall within the technology of the present invention In the protection domain of scheme.

Claims (8)

1. a kind of preparation method of the nano oxidized dysprosium of graphene coated, it is characterised in that this method comprises the following steps:
Step 1: acetic acid dysprosium to be dissolved in the in the mixed solvent of ethanol and propionic acid, acetic acid dysprosium solution is obtained, by the acetic acid dysprosium solution It is placed in pyrolysis reactor furnace, drying and processing is carried out under conditions of being first 120 DEG C in temperature, then under the oxygen atmosphere of humidity, 500 DEG C are continuously heating to by 0.1 DEG C/min~10 DEG C/min of heating rate, obtains dysprosia nano particle;The ethanol and The in the mixed solvent ethanol of propionic acid and the volume ratio of propionic acid are 1:1;
The volumn concentration of oxygen is 94%~99.4% in moist oxygen atmosphere described in step 1, and surplus is steam;
Step 2: dysprosium nitrate is dissolved in the aqueous solution of tert-butylamine or the aqueous solution of amion acetic acid, it is anti-to be subsequently placed in hydro-thermal Answer in kettle, dysprosia nano-pillar is obtained after hydro-thermal reaction;The volume of tert-butylamine and water in the aqueous solution of the tert-butylamine Than for 1:(4~10);The Ammonia In Aqueous Solution guanidine-acetic acid of the amion acetic acid and the volume ratio of water are 1:(4~10);
Step 3: the in the mixed solvent that graphene oxide is added to deionized water and ethanol stirs, graphene oxide is obtained Solution;The volume ratio of the in the mixed solvent deionized water and ethanol of the deionized water and ethanol is 1:(50~100);The oxygen The concentration of graphene oxide is 0.5mg/mL~10mg/mL in graphite alkene solution;
Step 4: dysprosia nano-pillar described in dysprosia nano particle described in step 1 and step 2 is pressed 1:(1~3) It is added to after mass ratio is well mixed described in step 3 in graphene oxide solution, is filtered after stirring, obtain filter residue, by the filter Slag is placed in heat-treatment furnace, and in inert gas shielding, temperature is heat-treated 0.5h~5h under conditions of being 400 DEG C~800 DEG C, obtains The nano oxidized dysprosium of graphene coated.
A kind of 2. preparation method of the nano oxidized dysprosium of graphene coated according to claim 1, it is characterised in that step 1 Described in heating rate be 1 DEG C/min~5 DEG C/min.
A kind of 3. preparation method of the nano oxidized dysprosium of graphene coated according to claim 1, it is characterised in that step 2 Described in hydro-thermal reaction temperature be 120 DEG C~220 DEG C, the reaction time of the hydro-thermal reaction is 1h~10h.
A kind of 4. preparation method of the nano oxidized dysprosium of graphene coated according to claim 1, it is characterised in that step 4 Described in the quality of graphene oxide and dysprosia nano particle and dysprosia nano-pillar mixture in graphene oxide solution The ratio between gross mass is 1:(50~100).
A kind of 5. preparation method of the nano oxidized dysprosium of graphene coated according to claim 1, it is characterised in that step 4 Described in the speed that stirs be 100r/min~1000r/min, the time of stirring is 2min~10min.
6. a kind of nano oxidized dysprosium of graphene coated prepared such as any one of Claims 1 to 5 claim methods described Using, it is characterised in that the nano oxidized dysprosium of graphene coated is used to prepare binary doped magnesium diboride superconductive bulk, specifically Preparation process is:By magnesium powder, boron powder and the nano oxidized dysprosium of graphene coated according to magnesium, boron and dysprosium atomic ratio be 1:2:(0.01 ~0.2) ratio mixed grinding, block is then pressed into, then the block is placed in heat-treatment furnace, in high-purity argon gas atmosphere Protection, temperature are heat-treated 1h~3h under conditions of being 750 DEG C~850 DEG C, obtain binary doped magnesium diboride superconductive bulk.
7. application according to claim 6, it is characterised in that the quality purity of the magnesium powder and boron powder is not less than 99%, the quality purity of the high-purity argon gas is 99.99%.
8. application according to claim 6, it is characterised in that the pressure of the compacting is 10MPa~20MPa.
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