CN106301281A - Membrane resonant of a kind of high mechanical quality factor realizes device - Google Patents
Membrane resonant of a kind of high mechanical quality factor realizes device Download PDFInfo
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- CN106301281A CN106301281A CN201610741294.2A CN201610741294A CN106301281A CN 106301281 A CN106301281 A CN 106301281A CN 201610741294 A CN201610741294 A CN 201610741294A CN 106301281 A CN106301281 A CN 106301281A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
- H03H9/02968—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with optical devices
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- Acoustics & Sound (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a kind of high mechanical quality factor membrane resonant realizes device, including metal fixed frame (1), the micro-beam of optical fiber (2) and thin film chip (3), described metal fixed frame (1) is square tabular hollow structure, the front surface of its upper and lower side frame is carved with two parallel narrow slot (6) being perpendicular to frame, is used for fixing the micro-beam of optical fiber (2);The micro-beam of described optical fiber (2) be two be applied in tension force after be fixed on the micro optical fiber of metal fixed frame (1), and four the micro-beams of isometric optical fiber being separated to form by thin film chip (3).The present invention can serve as the principle of acoustic wave filter based on optical fiber micro-beam (2) harmonic oscillator away from resonant frequency, effectively inhibit the phonon tunneling loss of thin film chip (3), improve the mechanical quality factor of membrane resonant, simple in construction, low cost, in room temperature in vacuo and low-temperature vacuum environment, all can keep good mechanical performance, can apply to the fields such as quantum photodynamics.
Description
Technical field
The present invention relates to quantum photodynamics and field of acoustics, membrane resonant of a kind of high mechanical quality factor is real
Existing device.
Background technology
High-tension silicon nitride film harmonic oscillator due to its to the extremely low absorptance of laser and higher mechanical quality because of
Son, it has also become the important devices of chamber photodynamics research field.The scheme cooled down based on distinguishable sideband, silicon nitride film harmonic oscillator
Have been cooled at present close to or even reach quantum ground state, and being applied to the generation of squeezed light field, gravitational wave detection,
The fields such as the most mutually conversion of microwave and light field.It should be noted that and carried out, at present, the experiment work maybe will carried out
In work, the mechanical quality factor of membrane resonant is a very important technical specification, and high mechanical quality factor is to realize
The precondition of related application.
At present, the silicon nitride film covered on silicon substrate can realize commercially producing, but in concrete application
In, it is necessary to it is fixed on a support and can use, but the phonon tunneling loss that fixed structure produces limits greatly
The mechanical quality factor of silicon nitride film harmonic oscillator.In early-stage Study, research worker is by improving silicon nitride film substrate
Fixed form, i.e. reduce substrate with the contact area between its mounting bracket, and reduce the method such as volume of fixing glue point
Improve the quality factor of thin film.Recently, research worker proposes to utilize the phonon crystal of periodic structure to form phonon forbidden band shield
Sonic propagation is effectively shielded, thus improves the quality factor of mechanical resonant.University of Copenhagen's bohr in 2014
Institute [Y.Tsaturyan, et al., Opt.Express 22,6810 (2014)] and America NI ST research group [P.-
L.Yu, et al., Appl.Phys.Lett.104,023510 (2014)] this method is incorporated into silicon nitride film harmonic oscillator
Assembling in, by the silicon chip around thin film make phonon crystal, it is achieved that a kind of high machine unrelated with fixed form
Tool quality factor membrane resonant.In above-mentioned scheme, only rely on the use needs extremely exquisiteness reducing contact area and glue
Manual operation, and yield rate is the lowest;Simultaneously as the experiment of quantum luminous power needs to be placed on sample the Gao Zhen of extremely low temperature
In Altitude, the method is difficult to ensure that sample is in the temperature fixed stably solidity from room temperature to extremely low temperature change procedure.The opposing party
Face, although the phonon forbidden band shield formed by phonon crystal has preferable sound wave shield effectiveness, but designs complex,
Needing in manufacturing process to use the micro-nano technology technology such as photoetching, chemical etching, technique is complex, cost intensive.
Summary of the invention
It is an object of the invention to provide a kind of high mechanical quality factor membrane resonant realizes device, and this device has knot
Structure is simple, and yield rate is high, and advantage with low cost can apply in quantum photodynamics experimental system.
What a kind of high mechanical quality factor membrane resonant that the present invention provides was sub realizes device, including thin film chip (3), gold
Belong to fixed frame (1) and the micro-beam of optical fiber (2);
Described metal fixed frame (1) is square tabular hollow structure, and the upper following spacing of hollow structure is in order to accurately
Control the effective length of the micro-beam of optical fiber (2);The effective length of the micro-beam of optical fiber (2) is upper following spacing and the core film of hollow structure
The half of the difference of sheet (3) length of side;It is carved with, on the front surface of the upper and lower side frame of metal fixed frame (1), the phase being perpendicular to frame respectively
The corresponding parallel narrow slot of two couple (6), two apply tension force after micro optical fiber be separately fixed at metal fixed frame (1) upper below
In the parallel narrow slot of two couple of frame (6), thin film chip (3) is fixed on the middle part of two micro optical fibers, and with metal fixed frame (1)
Upper and lower side frame is parallel and equidistant, is separated by micro optical fiber, forms four the micro-beam of isometric optical fiber (2).
Described thin film chip (3) is covered by the square silicon nitride film harmonic oscillator (4) of high-tension has square window in centre
Constitute on the square silicon substrate (5) of mouth.
Described micro optical fiber is drawn cone to make by single-mode quartz optical fibers, and after drawing cone, the diameter of section of optical fiber is less than 50 microns.
The material of described metal fixed frame (1) is preferably invar.
Described parallel narrow slot (6) is fixing with micro optical fiber, and micro optical fiber is all to pass through epoxy with the fixing of thin film chip (3)
Resin glue is adhesively fixed.
Compared with prior art, advantages of the present invention and effect:
The invention provides a kind of principle based on optical fiber micro-beam harmonic oscillator acoustic wave filter and realize high mechanical quality factor
The device of membrane resonant, effectively inhibits the phonon tunneling loss of membrane resonant, improves the mechanical product of membrane resonant
Prime factor;This apparatus structure is simple, low cost, stable performance, in room temperature and 10-6Under the vacuum environment of millibar, based on this device
The quality factor of silicon nitride film harmonic oscillator up to 1.5 × 106Above.
Assembly of the invention, compared with existing directly fixing assembling mode, on the one hand can suppress membrane resonant efficiently
Subbase sheet is to the phonon tunneling loss of fixing and mounting bracket, and on the other hand repeatability and the stability of device are high and true at low temperature
Altitude still can have preferable stability.
Assembly of the invention is compared with the shield Standard mode of existing phonon forbidden band, in terms of isolation phonon tunneling loss
Effect suitable, but simple in construction, it is not necessary to micro-nano technology equipment and the techniques such as complicated photoetching and chemical etching, mostly
Number optical laboratory gets final product self manufacture, with low cost.
The metal fixed frame (1) that assembly of the invention is comprised is on the premise of ensureing interior space dimension, and profile can
With according to application scenario need change, the demand of various different application environment can be flexibly met.
Accompanying drawing explanation
Fig. 1 height of the present invention mechanical quality factor silicon nitride film harmonic oscillator realizes apparatus structure schematic diagram
Fig. 2 height of the present invention mechanical quality factor silicon nitride film harmonic oscillator realizes the side section of thin film chip in device (3)
Figure
Fig. 3 apparatus of the present invention inhibition figure to phonon tunnelling
Fig. 4 apparatus of the present invention realize high mechanical quality factor membrane resonant subbase mould and (2,2) mould vibration mode and
The measurement result figure of mechanical quality factor
Detailed description of the invention
A kind of high mechanical quality factor membrane resonant realizes device.Its structure as shown in Figure 1 and Figure 2, is fixed including metal
Framework (1), the micro-beam of optical fiber (2) and silicon nitride film chip (3);Metal fixed frame (1) is square tabular hollow structure, in
Between square space width be 7mm, in order to control the length of the micro-beam of optical fiber (2), the front surface of the upper and lower side frame of framework is carved with respectively
The parallel narrow slot that the width being perpendicular to frame is 0.2mm, the degree of depth is 0.5mm, fixing for the micro-beam of optical fiber (2), metal is fixed
The external shape of framework (1) and size can need according to concrete application scenario and design;The micro-beam of optical fiber (2) is single mode quartz
Fibre-optical drawing forms, a diameter of 30 microns;In the middle of silicon nitride film chip (3), square hole edge length is 500 microns, thickness 50nm,
Tension force is that the square silicon nitride film harmonic oscillator (4) of 0.9GPa covers at the square silicon substrate that length of side 5mm, thickness are 0.5mm
(5), on, the basic mode frequency of vibration of silicon nitride film harmonic oscillator (4) is near 800kHz, and the frequency of vibration of (2,2) mould is at 1.6MHz
Near.
First the micro optical fiber drawn is positioned in the parallel narrow slot on metal fixed frame (1) during assembling, to determine
The relative distance of two optical fiber, then uses epoxide-resin glue to be relatively fixed with metal fixed frame (1) one end of micro optical fiber,
Epoxide-resin glue has higher hardness after hardening, can keep enough intensity under low-temperature vacuum environment, and for
Bonding material there is no corrosivity;After one end of micro optical fiber is with metal fixed frame (1) fixation, by metal fixed frame
Frame (1) is the most unsettled and keeps stable, and the free end carry quality at micro optical fiber is the counterweight of 25g simultaneously, now, in micro optical fiber
Portion has been attached the tension force of 346.6MPa, is fixed by this end with epoxide-resin glue the most again;Silicon nitride film chip (3) is used
Fine adjustment system is placed on the centre of two micro optical fibers and is adhesively fixed with epoxide-resin glue, upper and lower two back gauge metal edge frames
For 1mm, now, between metal fixed frame (1) and silicon nitride film chip (3), define four sections of diameters 30 microns, length
For 1mm, the micro-beam of the optical fiber (2) that includes tension force 346.6MPa, the eigenvibration frequency theory value of its front quadravalence vibration mode is respectively
For 275.3kHz, 587.6kHz, 1024.2kHz and 2368.9kHz, with basic mode and (2,2) mould of silicon nitride film harmonic oscillator (4)
Eigenvibration frequency the most overlapping.
Using optical interdferometer to test the isolating technique effect of apparatus of the present invention, the weak probe light of a branch of 1064nm is just
Inciding and reflected on square silicon substrate (5), reflection light incides on 50:50 beam splitter with the local oscillations light of another beam intensity
Interfering, the relative phase of two-beam locks onto pi/2, and the light field of outgoing is injected into balanced homodyne detection device, thus by right
The measurement that reflective probe light phase rises and falls realizes the measurement of square silicon substrate (5) displacement;During measuring, apparatus of the present invention
Be fixed on a piezoelectric ceramic actuator and drive loading outside mechanics, simultaneously metal fixed frame (1) upper the most bonding with
The consistent substrate of square silicon substrate (5) is as driving force basis reference;By using Network Analyzer that the vibration of sample is entered
Row is measured, and the outfan of Network Analyzer is connected with the piezoelectric ceramics being fixed with sample, the output signal of balanced homodyne detection device
The input being linked into Network Analyzer carries out record.
Fig. 3 show the sample displacement measurement result in the range of 200kHz to the 2MHz utilizing Network Analyzer record, and front 3
Micro-beam vibration frequency on rank is respectively 273.8kHz, 576kHz and 1025kHz, is consistent with calculated value.Can from Fig. 2
Going out, in the range of about 200kHz-1MHz, vibrational energy is inhibited about 30dB by the micro-beam of optical fiber (2), wherein at 600kHz-
In the range of 1MHz, inhibition can reach 40dB.
Fig. 4 show the basic mode of silicon nitride film harmonic oscillator (4) and the eigenvibration pattern of (2,2) mould and utilization declines and swings
The mechanical quality factor of the silicon nitride film harmonic oscillator (4) that method measurement obtains.It can be seen that basic mode and (2,2) mould
Mechanical quality factor respectively reached 1.78 × 106With 1.56 × 106, wherein, measuring condition is room temperature and vacuum environment.
Claims (5)
1. what high mechanical quality factor membrane resonant was sub realizes a device, including thin film chip (3), it is characterised in that also wrap
Include metal fixed frame (1) and the micro-beam of optical fiber (2);
Described metal fixed frame (1) is square tabular hollow structure, the front surface of its upper and lower side frame is carved with respectively vertical
Directly in the parallel narrow slot of corresponding two couple (6) of frame, the micro optical fiber after two applying tension force is separately fixed at metal fixed frame
In the parallel narrow slot of two couple (6) of the upper and lower side frame of frame (1), thin film chip (3) is fixed on the middle part of two micro optical fibers, and and metal
The upper and lower side frame of fixed frame (1) is parallel and equidistant, is separated by micro optical fiber, forms four the micro-beam of isometric optical fiber (2).
2. according to described in claims 1 high mechanical quality factor membrane resonant realize device, it is characterised in that described
Thin film chip (3) covered by the square silicon nitride film harmonic oscillator (4) of high-tension and have the square siliceous of square window in centre
Constitute on substrate (5).
3. according to described in claims 1 high mechanical quality factor membrane resonant realize device, it is characterised in that described
Micro optical fiber drawn cone to make by single-mode quartz optical fibers, draw after cone the diameter of section of optical fiber less than 50 microns.
4. according to described in claims 1 high mechanical quality factor membrane resonant realize device, it is characterised in that described
The material of metal fixed frame be invar.
5. according to described in claims 1 high mechanical quality factor membrane resonant realize device, it is characterised in that described
Parallel narrow slot (6) is fixing with micro optical fiber, and micro optical fiber is all bonding solid by epoxide-resin glue with the fixing of thin film chip (3)
Fixed.
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Cited By (3)
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CN110333568A (en) * | 2019-07-12 | 2019-10-15 | 金华伏安光电科技有限公司 | A kind of open-type MIM waveguiding structure |
CN111142183A (en) * | 2020-02-11 | 2020-05-12 | 山西大学 | Optical fiber mechanical vibrator with high mechanical quality factor and preparation method thereof |
CN115169569A (en) * | 2022-07-22 | 2022-10-11 | 北京百度网讯科技有限公司 | Superconducting quantum chip design method and device, electronic device and medium |
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US5747705A (en) * | 1996-12-31 | 1998-05-05 | Honeywell Inc. | Method for making a thin film resonant microbeam absolute |
US20060239633A1 (en) * | 2005-04-26 | 2006-10-26 | Harris Corporation | Apparatus and method for forming an optical microresonator |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110333568A (en) * | 2019-07-12 | 2019-10-15 | 金华伏安光电科技有限公司 | A kind of open-type MIM waveguiding structure |
CN111142183A (en) * | 2020-02-11 | 2020-05-12 | 山西大学 | Optical fiber mechanical vibrator with high mechanical quality factor and preparation method thereof |
CN115169569A (en) * | 2022-07-22 | 2022-10-11 | 北京百度网讯科技有限公司 | Superconducting quantum chip design method and device, electronic device and medium |
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