CN106298747B - A kind of light-detecting device - Google Patents
A kind of light-detecting device Download PDFInfo
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- CN106298747B CN106298747B CN201610750574.XA CN201610750574A CN106298747B CN 106298747 B CN106298747 B CN 106298747B CN 201610750574 A CN201610750574 A CN 201610750574A CN 106298747 B CN106298747 B CN 106298747B
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Abstract
The present invention provides a kind of light-detecting devices, using the semiconductor chip of semiconductor chip and multiple detection radiation that reflecting layer carries out that the transmitting radiation is isolated, ensure the independence of transmitting and detection, it prevents it from interfering with each other, improves the accuracy of detection, and, radiation signal is carried out using the first chamber of truncated cone-shaped, ensure transmitting collimation, and carry out the accommodating cavity of detection radiation using the annular chamber that section is handstand isosceles trapezoid, it is ensured that maximumlly receives feedback signal.
Description
Technical field
The present invention relates to light-detecting device fields, and in particular to a kind of semiconductor core with injection-moulded housing, transmitting radiation
The light-detecting device of piece and the semiconductor chip of detection radiation.
Background technology
It is known that the device of a kind of semiconductor chip with transmitting radiation of design and the semiconductor chip of detection radiation
Part.It is arranged in the shell separated and is arranged on such as circuit board spaced apart to each other however, described device usually has
Semiconductor chip.However the signal of the semiconductor chip of transmitting radiation can influence the semiconductor chip of detection radiation, cause to detect
As a result deviation or failure, and in general, transmitting radiation signal it is stronger, and feed back detection radiation signal compared with
It is weak, it is not easy to capture.
Invention content
Based on solving the problems in above-mentioned encapsulation, the present invention provides a kind of light-detecting device, have injection-moulded housing, one
The semiconductor chip for emitting the semiconductor chip and multiple detection radiation of radiation, wherein constituting the first chamber in the injection-moulded housing
With the second chamber, first chamber is the truncated cone-shaped chamber surrounded by inner wall and bottom wall, and the section of the truncated cone-shaped chamber is upright isosceles
Trapezoidal, second chamber is the annular chamber around the first chamber surrounded by outer wall, inner wall and bottom wall, and the section of the annular chamber is
It is inverted isosceles trapezoid；The semiconductor chip of the transmitting radiation has the active layer for being suitable for generating radiation and the transmitting spoke
The semiconductor chip penetrated is arranged in first chamber, and the semiconductor chip of the multiple detection radiation, which has, to be suitable for detecting spoke
The semiconductor chip of the active layer and the multiple detection radiation penetrated is arranged in second chamber, and the multiple detection
The semiconductor chip uniform ring of radiation is around the semiconductor chip for being arranged in the transmitting radiation.
According to an embodiment of the invention, further include the reflecting layer coated in the inner side and outer side of the inner wall of first chamber,
And the reflecting layer of inside outer wall coating.
According to an embodiment of the invention, the material in the reflecting layer is preferably silver.
According to an embodiment of the invention, further include the first filler material and filling second chamber for filling first chamber
Second filler material.
According to an embodiment of the invention, first and second filler material all includes epoxide resin material.
According to an embodiment of the invention, embedded absorbing particles in second filler material, the absorbing particles be suitable for
Partially absorb the radiation of the semiconductor chip transmitting by the transmitting radiation.
According to an embodiment of the invention, the bottom wall includes the semiconductor chip and multiple for carrying the transmitting radiation
Detect the multiple conductive slide glasses and multiple electrodes piece of the semiconductor chip of radiation.
According to an embodiment of the invention, the semiconductor chip of the semiconductor chip of the transmitting radiation and multiple detection radiation
It is electrically connected respectively with corresponding the multiple electrode slice by conducting wire.
Technical scheme of the present invention carries out that the semiconductor chip of the transmitting radiation and multiple detections is isolated using reflecting layer
The semiconductor chip of radiation, the independence for ensureing transmitting and detecting, prevents it from interfering with each other, improves the accuracy of detection, also,
Radiation signal is carried out using the first chamber of truncated cone-shaped, ensures transmitting collimation, and it is handstand isosceles trapezoid to utilize section
Annular chamber carries out the accommodating cavity of detection radiation, it is ensured that maximumlly receives feedback signal.
Description of the drawings
Fig. 1 is the sectional view of the light-detecting device of the present invention；
Fig. 2 is the vertical view of the light-detecting device of the present invention.
Specific implementation mode
Referring to Fig. 1 and 2, the present invention provides a kind of light-detecting devices, are partly led with what injection-moulded housing, a transmitting radiated
The semiconductor chip 3 of body chip 2 and multiple detection radiation, shows 4 semiconductor chips 3 in Fig. 2, can also be 6 or 8
Deng wherein constituting the first chamber 4 and the second chamber 5 in the injection-moulded housing, first chamber 4 is the circle surrounded by inner wall and bottom wall
The section of platform shape chamber, the truncated cone-shaped chamber is upright isosceles trapezoid, and second chamber 5 is surrounded by outer wall, inner wall and bottom wall
Around the annular chamber of the first chamber, the section of the annular chamber is to be inverted isosceles trapezoid；Include described for carrying on the bottom wall
Emit multiple conductive slide glasses 1, the multiple electrodes piece 10 of the semiconductor chip 2 of radiation and the semiconductor chip 3 of multiple detection radiation
And capsulation material 7.The semiconductor chip 2 of the transmitting radiation is light emitting chip, and what the multiple detection radiated partly leads
Body chip 3 is light-receiving optical sensing chip.
The semiconductor chip 2 of the transmitting radiation is with the active layer and the transmitting radiation for being suitable for generation radiation
Semiconductor chip 2 is arranged by carrying the conductive slide glass 1 being electrically connected in the first chamber 4 in first chamber 4, the multiple spy
The semiconductor chip 3 for surveying radiation has the active layer for being suitable for detection radiation and the semiconductor chip of the multiple detection radiation
3 are arranged by carrying and being electrically connected to the conductive slide glass 1 of the second intracavitary in second chamber 5, and the multiple detection spoke
3 uniform ring of semiconductor chip penetrated is around the semiconductor chip 2 for being arranged in the transmitting radiation.The semiconductor core of the transmitting radiation
Piece 2 and the semiconductor chip 3 of multiple detection radiation are electrically connected by conducting wire 9 with corresponding the multiple electrode slice 10 respectively, are led
9 weld of line has weld pad 8.
In the inside outer wall coating of the reflecting layer of the inner side and outer side coating of the inner wall of first chamber 4 and the second chamber 5
Reflecting layer, material is preferably silver, on the one hand, it can prevent half of multiple detections radiation around the radiation interference of transmitting
Conductor chip 3, to prevent the inaccuracy of result of detection, on the other hand, it is ensured that the collimation of the radiation of transmitting prevents its spoke
The diverging penetrated.
Further, epoxide resin material is filled in first chamber, 4 and second chamber 5 with encapsulating chip, in order to protect
The detection accuracy for demonstrate,proving the semiconductor chip 3 of multiple detection radiation, is embedded in the epoxide resin material of second chamber and inhales
Particle is received, the absorbing particles are suitable for absorbing the radiation emitted by the semiconductor chip 2 of the transmitting radiation at least partly.
Finally it should be noted that：Obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (5)
1. the half of a kind of light-detecting device, the semiconductor chip radiated with injection-moulded housing, a transmitting and multiple detection radiation
Conductor chip, wherein constituting the first chamber and the second chamber in the injection-moulded housing, first chamber is to be surrounded by inner wall and bottom wall
Truncated cone-shaped chamber, the section of the truncated cone-shaped chamber is upright isosceles trapezoid, and second chamber is to be surrounded by outer wall, inner wall and bottom wall
The annular chamber around the first chamber, the section of the annular chamber is to be inverted isosceles trapezoid；The semiconductor chip of the transmitting radiation
It is arranged in first chamber with the semiconductor chip for being suitable for generating the active layer of radiation and the transmitting radiation, it is described
The semiconductor chip of multiple detection radiation is partly led with the active layer and the multiple detection radiation for being suitable for detection radiation
Body chip is arranged in second chamber, and the semiconductor chip uniform ring of the multiple detection radiation is around being arranged in the hair
It penetrates around the semiconductor chip of radiation；Further include filling the first filler material of first chamber and filling the of second chamber
Two filler materials, first and second filler material all include epoxide resin material, and absorbing particles are embedded in second filler material,
The absorbing particles are suitable for absorbing the radiation of the semiconductor chip transmitting by the transmitting radiation at least partly.
2. light-detecting device according to claim 1, which is characterized in that further include in the inside of the inner wall of first chamber
The reflecting layer coated with the reflecting layer of outer application and inside outer wall.
3. light-detecting device according to claim 2, which is characterized in that the material in the reflecting layer is silver.
4. light-detecting device according to claim 1, which is characterized in that the bottom wall includes for carrying the transmitting spoke
The multiple conductive slide glasses and multiple electrodes piece of the semiconductor chip of the semiconductor chip and multiple detection radiation penetrated.
5. light-detecting device according to claim 4, which is characterized in that the semiconductor chip and multiple of the transmitting radiation
The semiconductor chip for detecting radiation is electrically connected by conducting wire with corresponding the multiple electrode slice respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610750574.XA CN106298747B (en) | 2016-08-30 | 2016-08-30 | A kind of light-detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610750574.XA CN106298747B (en) | 2016-08-30 | 2016-08-30 | A kind of light-detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298747A CN106298747A (en) | 2017-01-04 |
| CN106298747B true CN106298747B (en) | 2018-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610750574.XA Active CN106298747B (en) | 2016-08-30 | 2016-08-30 | A kind of light-detecting device |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809764A (en) * | 2011-05-13 | 2012-12-05 | 英特赛尔美国股份有限公司 | System and method for clear layer isolation |
| CN205209633U (en) * | 2012-11-09 | 2016-05-04 | 株式会社信五电子 | Nearly light intensity sensor of optics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831266B2 (en) * | 2002-03-13 | 2004-12-14 | Phone-Or Ltd. | Optical transducers of high sensitivity |
| TWI550894B (en) * | 2014-09-30 | 2016-09-21 | Magnetic induction module and its manufacturing method |
-
2016
- 2016-08-30 CN CN201610750574.XA patent/CN106298747B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809764A (en) * | 2011-05-13 | 2012-12-05 | 英特赛尔美国股份有限公司 | System and method for clear layer isolation |
| CN205209633U (en) * | 2012-11-09 | 2016-05-04 | 株式会社信五电子 | Nearly light intensity sensor of optics |
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| Publication number | Publication date |
|---|---|
| CN106298747A (en) | 2017-01-04 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20180613 Address after: 226300 Qingdao Road, hi tech Industrial Development Zone, Nantong, Jiangsu 885 Applicant after: Nantong Well Electric Moto Co., Ltd. Address before: 226300 266 Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: Zhang Weifeng |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |