CN106298471A - The method for annealing of sic semiconductor device - Google Patents
The method for annealing of sic semiconductor device Download PDFInfo
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- CN106298471A CN106298471A CN201510296003.9A CN201510296003A CN106298471A CN 106298471 A CN106298471 A CN 106298471A CN 201510296003 A CN201510296003 A CN 201510296003A CN 106298471 A CN106298471 A CN 106298471A
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- annealing
- silicon carbide
- carbide wafer
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- 238000000137 annealing Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 77
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 72
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 59
- 150000002500 ions Chemical class 0.000 claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 35
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 238000009423 ventilation Methods 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 8
- 229930195733 hydrocarbon Natural products 0.000 claims description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- -1 SiC ion Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to sic semiconductor device preparing technical field, in particular disclose the method for annealing of a kind of sic semiconductor device, described sic semiconductor device includes the silicon carbide wafer with ion implanting, and this method for annealing includes step: A, is placed in chemical vapour deposition reaction chamber by the silicon carbide wafer through ion implanting；B, by reaction chamber evacuation, and be filled with protective gas；C, the reaction chamber after protective gas will be filled with heat up, and be filled with reacting gas, carry out pyrolytic reaction, silicon carbide wafer on the surface of the side of ion implanting, form carbon film；D, the silicon carbide wafer being coated with carbon film is made annealing treatment.Method for annealing according to the present invention; utilize chemical vapour deposition technique; fine and close carbon film is formed on silicon carbide wafer surface; make during subsequent anneal; the element not only suppressing ion implanted does not escapes from silicon carbide wafer surface, and protects the pattern on silicon carbide wafer surface and roughness not to deteriorate.
Description
Technical field
The invention belongs to sic semiconductor device preparing technical field, specifically, relate to a kind of carborundum
The method for annealing of semiconductor device.
Background technology
Comparing with traditional Si monocrystalline, SiC single crystal has that energy gap is big, critical breakdown strength is high, saturated
Drift speed is big and the advantage such as thermal conductivity height, is particularly suitable for preparing electronic device high-power, high-frequency.
Owing to impurity diffusion rate in SiC single crystal is the least, it is difficult to SiC is entered by the way of diffusion
Row adulterates effectively, and therefore ion implanting becomes the inevitable choice being doped SiC；But, for
For SiC, the annealing temperature needed for activator impurity is general all more than 1500 DEG C, such as after ion implantation
At a temperature of this height, on the one hand, the element injected is likely to escape from surface of SiC, causes not reaching institute
The injection effect needed；On the other hand, the surface of SiC single crystal can occur distil phenomenon, cause pattern degenerate and
Surface roughness becomes big problem, has a strong impact on the performance of SiC device；Therefore, in high-temperature annealing process
Need surface of SiC is protected.
The current major way protecting the surface of SiC after ion implanting is to be coated with in the protection of its plated surface
Layer, these protective coatings mainly have AlN coating, AlN/Al2O3Coating, AlN/BN coating and carbon coating etc.；
In these coatings, the temperature that AlN coating shields only up to reach 1600 DEG C, AlN/Al2O3
Coating and AlN/BN coating can reach 1700 DEG C, and carbon coating can reach more than 2000 DEG C.Due to SiC
The particularity of material, a lot of in the case of annealing temperature after SiC ion implanting be required for reaching more than 1800 DEG C,
Therefore carbon coating has obtained more parent and has looked at.
Although the ion implanting of SiC can be annealed and be played a protective role by carbon coating at higher temperatures in theory,
But the structure that premise is himself can be the finest and close.Currently prepare carbon coating to be mainly by photoresist carbonization
Mode, SiC single crystal surface spin coating one layer photoetching glue the most after ion implantation, then in certain atmosphere
With carry out heat treatment under uniform temperature, make the Organic substance in photoresist be decomposed to form one layer of carbon film；But the method
The prepared general compactness of carbon film is poor, it is impossible to meet the requirement of long-time high annealing.
Summary of the invention
For solving the problem that above-mentioned prior art exists, the invention provides a kind of sic semiconductor device
Method for annealing, the method is by using chemical vapour deposition technique on the silicon carbide wafer surface through ion implanting
Prepare one layer of fine and close carbon film, thus silicon carbide wafer is served the effect of Annealing Protection.
In order to reach foregoing invention purpose, present invention employs following technical scheme:
The method for annealing of a kind of sic semiconductor device, described sic semiconductor device includes having ion
The silicon carbide wafer injected, described method for annealing includes step: A, by the silicon carbide wafer through ion implanting
It is placed in chemical vapour deposition reaction chamber；B, by described reaction chamber evacuation, and be filled with protective gas；
C, the reaction chamber after described protective gas will be filled with heat up, and be filled with reacting gas, carry out pyrolytic reaction,
The formation carbon film on the surface of the side of ion implanting of described silicon carbide wafer；D, described carbon film will be coated with
Silicon carbide wafer make annealing treatment.
Further, the thickness of described carbon film is 0.2 μm～5 μm.
Further, in described step C, described reacting gas is hydrocarbon gas, described reacting gas
Ventilation flow rate is 0.01L/min～0.5L/min, and described reacting gas passes to its dividing in described reaction chamber
Pressure is 0.5kPa～5kPa.
Further, any one in methane, the propane of described hydrocarbon gas.
Further, the temperature of described pyrolytic reaction is 900 DEG C～1400 DEG C, and the time is 1h～8h.
Further, in described step C, heating rate is 10 DEG C/min～50 DEG C/min.
Further, described step D specifically includes: by have the silicon carbide wafer of described carbon film described instead
Answer in chamber and be cooled to room temperature with the speed of 5 DEG C/min～10 DEG C/min；To have described carbon film after cooling
Silicon carbide wafer is transferred in high-temperature annealing furnace, makes annealing treatment 1min～60 at a temperature of 1500 DEG C～2100 DEG C
min。
Further, in described step B, described reaction cavity is evacuated to 1Pa～10Pa, described
Protective gas is nitrogen or noble gas, and the ventilation flow rate of described protective gas is 0.1L/min～5L/min,
It is 2 × 10 that described protective gas passes to its pressure in described reaction chamber4Pa～9 × 104Pa。
Further, described method for annealing further comprises the steps of: E, annealed process is coated with described carbon film
Silicon carbide wafer add carbon film described in heat abstraction.
Further, described carbon film is removed method particularly includes: annealed process is coated with described carbon film
Silicon carbide wafer be transferred in Muffle furnace；Described Muffle furnace is heated to 700 DEG C～1000 DEG C, removes described
Carbon film.
The present invention utilizes chemical vapour deposition technique, using hydrocarbon gas as reacting gas, is pyrolyzed through it, at warp
The silicon carbide wafer surface crossing ion implanting forms fine and close carbon film, thus ensures moving back at follow-up silicon carbide wafer
During fire, the element that not only can suppress ion implanted does not escapes from silicon carbide wafer surface, but also can
Pattern and the roughness on the surface of protection silicon carbide wafer do not deteriorate when long-time high annealing.
Accompanying drawing explanation
By combining the following description that accompanying drawing is carried out, above and other aspect of embodiments of the invention, feature
Will become clearer from advantage, in accompanying drawing:
Fig. 1 is the flow chart of steps of the method for annealing of sic semiconductor device according to an embodiment of the invention；
Fig. 2 is the SEM figure of the silicon carbide wafer according to an embodiment of the invention with carbon film.
Detailed description of the invention
Hereinafter, with reference to the accompanying drawings to describe embodiments of the invention in detail.However, it is possible to it is different with many
Form implements the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.
On the contrary, it is provided that these embodiments are to explain the principle of the present invention and actual application thereof, so that this area
Others skilled in the art it will be appreciated that various embodiments of the present invention and be suitable for the various of specific intended application and repair
Change.
Fig. 1 is the flow chart of steps of the method for annealing of sic semiconductor device according to an embodiment of the invention.
With reference to Fig. 1, the method for annealing of sic semiconductor device includes following step according to an embodiment of the invention
Rapid:
In step 110, the silicon carbide wafer through ion implanting is placed in chemical vapour deposition reaction chamber
In.
Specifically, silicon carbide wafer has the one of ion implanting to face up, say, that at follow-up carbon film
Preparation process in, carbon film is formed on the surface of the one side with ion implanting of silicon carbide wafer, thus
Can prevent ion implanted element from escaping this silicon carbide wafer in annealing.
In the step 120, reaction chamber is evacuated to 10Pa, to remove oxygen.
Specifically, using mechanical pump evacuation, generally, mechanical pump evacuation can only achieve 1Pa
Left and right, accordingly it is also possible to say, is evacuated to below 10Pa by reaction chamber, or to 1Pa～10Pa.
In step 130, it is filled with argon to evacuated reaction chamber.Argon is as a kind of protective gas
Being filled with the reaction chamber after evacuation, one is so that this reaction chamber obtains in follow-up intensification heating process
Protection, two is the effect that the follow-up reacting gas being filled with in this reaction chamber plays dilution.
In the present embodiment, the Ventilation Rate of argon is 0.1L/min, and ventilation is until its pressure in reaction chamber
Reach by force 5 × 104Till Pa.But the present invention is not restricted to this, protective gas is not limited to argon, such as
Nitrogen or other noble gases etc.；And the Ventilation Rate of protective gas controls at 0.1L/min～5L/min
In, until its pressure in reaction chamber reaches 2 × 104Pa～9 × 104Pa can stop ventilation.
In step 140, the reaction chamber after being filled with argon is warming up to 1200 DEG C, and is filled with first wherein
Alkane so that methane carries out pyrolytic reaction 5h, deposits on the surface that silicon carbide wafer has ion implanting side
Form carbon film.
Specifically, the heating rate controlling reaction chamber in the present embodiment is 50 DEG C/min, the ventilation speed of methane
Rate is 0.5L/min, passes to its dividing potential drop in reaction chamber and reaches 5kPa, stops ventilation, through the heat of 5h
Solving reaction, silicon carbide wafer has on the surface of ion implanting side can be by chemical gaseous phase formation of deposits one
Layer thickness is the fine and close carbon film about 1 μm, as shown in Figure 2.In fig. 2, arrows region is
Through the carbon film that above-mentioned steps prepares, and on the left of it, it is silicon carbide wafer；From figure 2 it can be seen that
The carbon film with obvious one-dimentional structure is defined on silicon carbide wafer surface；The fine and close carbon film of this formation can be protected
Card, in the annealing process of follow-up silicon carbide wafer, not only can suppress ion implanted element not from carborundum
Wafer surface escapes, but also the pattern on the surface of silicon carbide wafer and roughness can be protected at long-time high temperature
Do not deteriorate during annealing.Certainly, it is not restricted to above-mentioned pyrolytic reaction according to the method for annealing of the present invention
Temperature, heating rate, reactive gas species, Ventilation Rate and reacting gas pressure, reaction chamber is with 10 DEG C
The heating rate of/min～50 DEG C/min rises to 900 DEG C～1400 DEG C, and leading to 0.01L/min～0.5L/min
The hydrocarbon gas such as methane, ethane is passed through wherein by gas speed, and reaches the pressure of 0.5kPa～5kPa so that
Above-mentioned hydrocarbon gas as reacting gas carries out pyrolytic reaction 1h～8h, silicon carbide wafer at the temperature disclosed above
Having on the surface of ion implanting side can be by one layer of fine and close carbon film of chemical gaseous phase formation of deposits.Typically
Ground, by controlling carbon film preparation condition, can be by the THICKNESS CONTROL of carbon film in the range of 0.2 μm～5 μm.
What deserves to be explained is, in the step 120, reaction chamber evacuation is removed oxygen therein, its mesh
One be the hydrocarbon gas such as the methane that prevents step 140 to be passed through at high temperature with oxygen reaction, occur blast existing
As；Two is that the fine and close carbon film preventing step 140 from generating aoxidizes, and affects carbon film quality.
In step 150, the silicon carbide wafer being coated with carbon film is transferred in high-temperature annealing furnace, at 2100 DEG C
Lower annealing 30min.
Certainly, before the above-mentioned silicon carbide wafer being coated with carbon film is transferred to high-temperature annealing furnace, first with 5 DEG C
Reaction cavity is down to room temperature (about 25 DEG C) by the speed of/min～10 DEG C/min, and it is straight to be passed through air wherein
It is normal pressure (1 atm higher) to reaction chamber, then the silicon carbide wafer being coated with carbon film is taken out
And be transferred in high-temperature annealing furnace make annealing treatment.
Silicon carbide wafer through ion implanting is made annealing treatment, is to activate ion implanted unit
Element also repairs the damage of lattice in the silicon carbide wafer that ion implanting causes.
What deserves to be explained is, the fine and close carbon film prepared on silicon carbide wafer surface through above-mentioned steps 140 can
Ensure that this silicon carbide wafer through ion implanting makes annealing treatment 1 under the annealing temperature of 1500 DEG C～2100 DEG C
After min～60min, pattern and the roughness on the surface of silicon carbide wafer do not deteriorate.Different
It is, poor with the photoresist general compactness of carbon film through thermally decomposing to yield in prior art, annealed in reality
Annealing temperature and annealing time that Cheng Zhongneng bears are the most limited, and its annealing temperature typically can only achieve 1800 DEG C,
When reaching 1900 DEG C, silicon carbide roughness begins to substantially increase；And annealing time is typically also 1
About min～5min.But, in the annealing of actual ion implanted carborundum, according to through from
The difference of the element that son injects, annealing generally requires higher time and temperature, and some needs are at 2000 DEG C
More than maintain for a long time, and the carbon film prepared according to the method for annealing of the present invention can be tieed up at 2100 DEG C
Hold 60min, and the pattern of silicon carbide and roughness can also be kept not to deteriorate；Therefore say according to this
The carbon film that the method for annealing of invention prepares is in carborundum Annealing Protection effect prior art to be substantially better than
Annealing Protection effect through the carbon film that photoresist is thermally treated resulting in.
In a step 160, the annealed silicon carbide wafer being coated with carbon film is heated in Muffle furnace
800 DEG C, remove the carbon film on silicon carbide wafer surface.
Usually, Muffle furnace adds the process of heat abstraction carbon film, is maintained in air atmosphere.
After tested, annealed process and eliminate the surface roughness of silicon carbide wafer of carbon film less than 1
nm。
The method for annealing of the sic semiconductor device according to the present invention, exists initially with chemical vapour deposition technique
Silicon carbide wafer has formation of deposits densification carbon film on a side surface of ion implanting, then makes annealing treatment,
Heat-treating methods is finally used to be removed by carbon film；Not only ensure that silicon carbide wafer in annealing, warp
The element of ion implanting does not escapes from silicon carbide wafer surface, and the pattern on the surface of silicon carbide wafer and coarse
Degree does not deteriorates in long-time high annealing；And finally will be formed in the carbon film on silicon carbide wafer surface
Remove, the most do not introduce other impurity.
Although illustrate and describing the present invention with reference to specific embodiment, but those skilled in the art will
Understand: in the case of without departing from the spirit and scope of the present invention limited by claim and equivalent thereof,
The various changes in form and details can be carried out at this.
Claims (10)
1. a method for annealing for sic semiconductor device, described sic semiconductor device include having from
The silicon carbide wafer that son injects, it is characterised in that described method for annealing includes step:
A, the silicon carbide wafer through ion implanting is placed in chemical vapour deposition reaction chamber；
B, by described reaction chamber evacuation, and be filled with protective gas；
C, the reaction chamber after described protective gas will be filled with heat up, and be filled with reacting gas and carry out pyrolytic reaction,
Formation carbon film on the surface of the side of ion implanting at described silicon carbide wafer；
D, the silicon carbide wafer being coated with described carbon film is made annealing treatment.
Method for annealing the most according to claim 1, it is characterised in that the thickness of described carbon film is 0.2
μm～5 μm.
Method for annealing the most according to claim 1 and 2, it is characterised in that in described step C,
Described reacting gas is hydrocarbon gas, and the ventilation flow rate of described reacting gas is 0.01L/min～0.5L/min,
It is 0.5kPa～5kPa that described reacting gas passes to its dividing potential drop in described reaction chamber.
Method for annealing the most according to claim 3, it is characterised in that described hydrocarbon gas selected from methane,
Any one in propane.
Method for annealing the most according to claim 3, it is characterised in that the temperature of described pyrolytic reaction is
900 DEG C～1400 DEG C, the time is 1h～8h.
Method for annealing the most according to claim 5, it is characterised in that in described step C, heat up speed
Rate is 10 DEG C/min～50 DEG C/min.
Method for annealing the most according to claim 5, it is characterised in that described step D specifically includes:
Drop being coated with the silicon carbide wafer of the carbon film speed with 5 DEG C/min～10 DEG C/min in described reaction chamber
Warm to room temperature；
The silicon carbide wafer being coated with carbon film after cooling is transferred in high-temperature annealing furnace, at 1500 DEG C～2100 DEG C
At a temperature of make annealing treatment 1min～60min.
Method for annealing the most according to claim 7, it is characterised in that in described step B, by institute
Stating reaction cavity and be evacuated to 1Pa～10Pa, described protective gas is nitrogen or noble gas, described protection gas
The ventilation flow rate of body is 0.1L/min～5L/min, and described protective gas passes to it in described reaction chamber
Pressure is 2 × 104Pa～9 × 104Pa。
Method for annealing the most according to claim 1, it is characterised in that described method for annealing also includes step
Rapid:
E, will annealing after silicon carbide wafer add carbon film described in heat abstraction.
Method for annealing the most according to claim 9, it is characterised in that remove the concrete of described carbon film
Method is:
The silicon carbide wafer being coated with described carbon film of annealed process is transferred in Muffle furnace；
Described Muffle furnace is heated to 700 DEG C～1000 DEG C, removes described carbon film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109494150A (en) * | 2018-11-21 | 2019-03-19 | 中国电子科技集团公司第十三研究所 | The production method and silicon carbide power device of silicon carbide high-temp. annealing surface protection |
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Cited By (2)
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| CN109494150A (en) * | 2018-11-21 | 2019-03-19 | 中国电子科技集团公司第十三研究所 | The production method and silicon carbide power device of silicon carbide high-temp. annealing surface protection |
| CN109494150B (en) * | 2018-11-21 | 2021-06-08 | 北京国联万众半导体科技有限公司 | Manufacturing method of silicon carbide high-temperature annealing surface protection and silicon carbide power device |
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