CN106298165B - A kind of voltage-controlled controllable impedance - Google Patents

A kind of voltage-controlled controllable impedance Download PDF

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Publication number
CN106298165B
CN106298165B CN201610864392.5A CN201610864392A CN106298165B CN 106298165 B CN106298165 B CN 106298165B CN 201610864392 A CN201610864392 A CN 201610864392A CN 106298165 B CN106298165 B CN 106298165B
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electrode
voltage
inductance
controllable impedance
effect transistor
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CN106298165A (en
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葛厚洋
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Yulong Computer Telecommunication Scientific Shenzhen Co Ltd
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Yulong Computer Telecommunication Scientific Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/005—Inductances without magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/40—Structural association with built-in electric component, e.g. fuse

Abstract

The embodiment of the invention discloses a kind of voltage-controlled controllable impedance, including：Field-effect transistor and inductance coil, inductance coil are made up of conductive core with the insulating barrier for being wrapped in conductive core surface, and inductance coil includes coiler part and electrode part；Coiler part is arranged inside field-effect transistor, and one end of electrode part is connected with one end of coiler part, and the other end of electrode part is exposed to the outside of voltage-controlled controllable impedance via the electrode of field-effect transistor, forms inductance electrode；The surface of coiler part is at least provided with two contacts, conductive core at contact is not covered with insulating barrier, and it is covered with the first semi-conducting material, the type of first semi-conducting material is identical with the semi-conducting material of source electrode or the doped region of drain electrode, contact is located in conducting channel, and as the change of conducting channel width, the number of the contact in conducting channel change, therefore by changing grid voltage, the regulation to the inductance value of controllable impedance can just be realized.

Description

A kind of voltage-controlled controllable impedance
Technical field
The present invention relates to inductor field, and in particular to a kind of voltage-controlled controllable impedance.
Background technology
The frequency range that current Cell Phone Design needs are supported is more and more, or even has reached the rank of 30 frequencies, and this is just meaned On a mobile phone, to be designed with 30 radio frequency paths.Each radio frequency path forms by substantial amounts of element, including inductance. In order to ensure the normal operation of each radio frequency path, it is necessary to carry out matching and debugging to each radio frequency path, including determine inductance value Suitable inductance, to cause the impedance matching of radio frequency path, reach optimum state.
In the prior art, inductance used in the matching and debugging of radio frequency path is the inductance that inductance value is fixed, when radio frequency leads to When inductance in road can not realize impedance matching, engineer needs to carry out manual tip-off to current inductance, and selects other inductance The inductance of amount, it is welded in radio frequency path again.During matching and debugging, engineer need constantly by tip-off, Weld to change the inductance value of the inductance in radio frequency path, until realizing the impedance matching of radio frequency path.
During the matching and debugging of radio frequency path, engineer needs to change inductance manually to determine suitable inductance value, Suitable inductance value can be just found due to usually requiring repeatedly to change, therefore engineer needs to carry out multiple tip-off, welding, behaviour Make cumbersome, efficiency is low.
The content of the invention
It is suitable to determine in the prior art for solving the embodiments of the invention provide a kind of voltage-controlled controllable impedance Inductance value and change cumbersome problem caused by inductance manually.
To reach above-mentioned purpose, the one side of the embodiment of the present invention provides a kind of voltage-controlled controllable impedance, including：
Field-effect transistor and inductance coil, the electrode of the field-effect transistor includes source electrode, drain and gate, described Inductance coil is made up of conductive core with the insulating barrier for being wrapped in the conductive core surface, and the inductance coil includes coil portion Divide and electrode part；
The coiler part is arranged inside the field-effect transistor, one end and the coil portion of the electrode part The one end divided is connected, and the other end of the electrode part controls via the electrode of the field-effect transistor exposed to the voltage Controllable impedance outside, formed inductance electrode；
The surface of the coiler part is at least provided with two contacts, and the conductive core at the contact is not covered with described Insulating barrier, the conductive core at the contact is covered with the first semi-conducting material, the type of first semi-conducting material and institute It is identical to state the semi-conducting material of the doped region of source electrode or the doped region of the drain electrode, it is conductive when existing in the field-effect transistor During raceway groove, the contact is located in the conducting channel, and with the change of the conducting channel width, positioned at the conduction The number of the contact in raceway groove changes.
With reference in a first aspect, in the first possible implementation of first aspect, the coiler part along perpendicular to The direction of the grid is set.
With reference to the possible implementation of the first of first aspect or first aspect, second in first aspect is possible In implementation, the semi-conducting material of the doped region of the doped region or the drain electrode of first semi-conducting material and the source electrode It is identical.
With reference to second of possible reality of the first possible implementation and first aspect of first aspect, first aspect Among existing mode any one, in the third possible implementation of first aspect, the coiler part is by more than 2 circles Coil forms.
Second of possible reality of the first possible implementation, first aspect with reference to first aspect, first aspect Among the third possible implementation of existing mode and first aspect any one, in the 4th kind of possible reality of first aspect In existing mode, each circle coil of the coiler part is provided with the contact.
Second of possible reality of the first possible implementation, first aspect with reference to first aspect, first aspect It is any among existing mode, the 4th kind of possible implementation of the third possible implementation and first aspect of first aspect One kind, in the 5th kind of possible implementation of first aspect, the conductive core material of the inductance coil is gold, copper, silver Or its alloy.
Second of possible reality of the first possible implementation, first aspect with reference to first aspect, first aspect Existing mode, the third possible implementation of first aspect, the 4th kind of possible implementation and first party of first aspect Any one, described in the 6th kind of possible implementation of first aspect among the 5th kind of possible implementation in face Field-effect transistor is insulated-gate type field effect transistor MOSFET.
With reference to the 6th kind of possible implementation of first aspect, in the 7th kind of possible implementation of first aspect In, the Part I of the coiler part is arranged at the source electrode of the MOSFET or the doped region of grid, the coiler part Part II is arranged at the doped region of the grid, and the contact is arranged at the outside of the Part II；
The electrode portion lease making is exposed to the outside of the voltage-controlled controllable impedance by the source electrode or the drain electrode, Form inductance electrode.
Second of possible reality of the first possible implementation, first aspect with reference to first aspect, first aspect Existing mode, the third possible implementation of first aspect, the 4th kind of possible implementation and first party of first aspect Any one, described in the 8th kind of possible implementation of first aspect among the 5th kind of possible implementation in face Field-effect transistor is junction field effect transistor JFET.
With reference to the 8th kind of possible implementation of first aspect, in the 8th kind of possible implementation of first aspect In, the coiler part is arranged at the doped region of the source electrode or the doped region of the drain electrode；
The electrode portion lease making is exposed to the outside of the voltage-controlled controllable impedance by the grid, forms inductance electricity Pole.
As can be seen from the above technical solutions, the embodiment of the present invention has advantages below：
Voltage-controlled controllable impedance provided by the invention is made up of field-effect transistor and inductance coil, inductance coil by Conductive core and the insulating barrier composition for being wrapped in conductive core surface, inductance coil include coiler part and electrode part, coil Part be arranged inside field-effect transistor, one end of electrode part is connected with one end of coiler part, electrode part it is another End is exposed to the outside of voltage-controlled controllable impedance via the electrode of field-effect transistor, forms inductance electrode, coiler part Surface at least provided with two contacts, conductive core at contact is not covered with insulating barrier, the conductive core covering at contact There are the first semi-conducting material, the type of the first semi-conducting material and the semi-conducting material of the doped region of source electrode or the doped region of drain electrode Identical, when conducting channel in field-effect transistor be present, contact is located in conducting channel, and with conducting channel width Change, the number of the contact in conducting channel change, and the voltage of grid are added in by changing, thus it is possible to vary field-effect The width of the conducting channel of transistor, change the number for the contact that coiler part is located in conducting channel, when inductance electrode and source When pole or drain electrode (inductance electrode not via electrode) incoming transport circuit, thus it is possible to vary the length of coiler part incoming transport circuit Degree, so as to change the inductance value of controllable impedance.During the matching and debugging of radio frequency path, engineer do not need manual tip-off, Weld to change inductance, to determine suitable inductance value, operation can be simplified, improve efficiency to change its inductance value.
Brief description of the drawings
Fig. 1 is the voltage-controlled controllable impedance one embodiment schematic diagram of MOSFET types of the present invention；
Fig. 2 is MOSFET types of the present invention one fundamental diagram of voltage-controlled controllable impedance；
Fig. 3 is the voltage-controlled controllable impedance one embodiment schematic diagram of JFET types of the present invention；
Fig. 4 is JFET types of the present invention one fundamental diagram of voltage-controlled controllable impedance.
Embodiment
The embodiments of the invention provide a kind of voltage-controlled controllable impedance, for the inductance by voltage-regulation inductance Amount, it is convenient to determine suitable inductance value.
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention Accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only The embodiment of a part of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people The every other embodiment that member is obtained under the premise of creative work is not made, it should all belong to the model that the present invention protects Enclose.
Term " first ", " second ", " the 3rd " in description and claims of this specification and above-mentioned accompanying drawing, " The (if present)s such as four " are for distinguishing similar object, without for describing specific order or precedence.It should manage The data that solution so uses can exchange in the appropriate case, so that the embodiments described herein can be with except illustrating herein Or the order beyond the content of description is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that Cover it is non-exclusive include, for example, containing the process of series of steps or unit, method, system, product or equipment need not limit In those steps or unit for clearly listing, but may include not list clearly or for these processes, method, production The intrinsic other steps of product or equipment or unit.
The frequency range that current Cell Phone Design needs are supported is more and more, or even has reached the rank of 30 frequencies, and this is just meaned On a mobile phone, to be designed with 30 radio frequency paths.Each radio frequency path forms by substantial amounts of element, including inductance, Resistance, switch etc..In order to ensure each radio frequency path normal operation, it is necessary to carry out matching and debugging to each radio frequency path, it is determined that The suitable inductance of inductance value, to cause the impedance matching of radio frequency path, reaches optimum state.
In the prior art, inductance used in the matching and debugging of radio frequency path is the inductance that inductance value is fixed, and due to Radio frequency path is needed to design in limited pcb board spatially, therefore the inductor size used is smaller, and common-size is generally 0.2mm×0.1mm.When the inductance being welded in radio frequency path can not realize impedance matching, engineer is needed to currently used Inductance carry out manual tip-off, and select the inductance of other inductance values, it be welded in radio frequency path again.Due to inductance chi Very little smaller, easily there is the bad welding situation such as rosin joint in the welding process of inductance in engineer, and yield is relatively low.Also, During debugging, after engineer usually requires to attempt the inductance of multiple inductance values, suitable inductance value can be found, Need to carry out multiple tip-off during this, weld operation to change the inductance in radio frequency path, cumbersome, workload Greatly, a large amount of welding operations adversely affect to the health of engineer.
In order to solve the above problems, the present invention provides a kind of voltage-controlled controllable impedance, it is only necessary to changes voltage and just can The inductance value of inductance is adjusted, to determine suitable inductance value, it is not necessary to carry out multiple tip-off, welding operation, simplify engineer Operation, reduce workload, and improve efficiency.The one kind of controllable impedance as inductor, there is many answer in real life With, for example, in radio, TV is medium is widely used, therefore, controllable impedance provided by the invention can be also used for Other occasions, and be not limited to apply in the radio frequency path matching and debugging of mobile phone.
Controllable impedance provided by the invention, it is made up of the inductance and field-effect transistor of fixed inductance amount, field-effect The electrode of transistor includes source electrode, drain and gate, main idea is that the conducting channel using field-effect transistor The principle that can change with the change for the voltage for being added in grid of width adjust the inductance between source electrode and drain electrode.By inductance coil The doped region of source electrode or the doped region of drain electrode of embedded field-effect transistor, the outward flange of coil are arranged at the doping of grid Area, and the insulating materials that will be arranged at the coil surface of the doped region of grid removes, and forms the contact of multiple access conductive paths. Channel width can be changed by changing grid voltage, the change of channel width can change the inductance coil of access conductive path Contact position, so as to change the inductance value of controllable impedance.It is different with mechanical controllable impedance of the prior art, have and be not easy The characteristics of abrasion, small volume.
For the ease of the understanding of those skilled in the art, the present invention is by following examples to technical side provided by the invention Case illustrates.Voltage-controlled controllable impedance one embodiment includes in the embodiment of the present invention：
Field-effect transistor and inductance coil.The electrode of field-effect transistor includes source electrode, drain and gate, inductance coil It is made up of conductive core and the insulating barrier for being wrapped in conductive core surface, inductance coil includes coiler part and electrode part.
Coiler part is arranged inside field-effect transistor, and one end of electrode part is connected with one end of coiler part, electricity The other end of pole part is exposed to the outside of voltage-controlled controllable impedance via the electrode of field-effect transistor, forms inductance electricity Pole.
The surface of coiler part is at least provided with two contacts, and the conductive core at contact is not covered with insulating barrier, contact The conductive core at place mixing covered with the first semi-conducting material, the type of the first semi-conducting material and the doped region of source electrode or drain electrode The semi-conducting material in miscellaneous area is identical, and when conducting channel in field-effect transistor be present, contact is located in conducting channel, and with The change of conducting channel width, the number of the contact in conducting channel changes.
The present invention is added in the voltage of grid by changing, and changes the width of the conducting channel of field-effect transistor, and work as When the width of conducting channel changes, thus it is possible to vary coiler part is located at the position of the contact in conducting channel, if inductance is electric Pole is exposed to the outside of variable inductance via source electrode, after inductance electrode and drain electrode incoming transport loop, thus it is possible to vary coil portion The length of ac circuit is tapped into, so as to change the inductance value of controllable impedance.During the matching and debugging of radio frequency path, pass through Fixed inductance is replaced by the voltage-controlled controllable impedance of the present invention, engineer does not need manual tip-off, welded to change electricity Sense, to determine suitable inductance value, operation can be simplified, improve efficiency to change its inductance value.
In actual use, field-effect transistor can use insulated-gate type field effect transistor MOSFET, including three Electrode：G (grid), S (source electrode) and D (drain electrode), are insulation between grid G and drain D and source S, drain D and source S it Between have two PN junctions.MOSFET includes enhanced N-channel, N-channel depletion type, P-channel enhancement type, P-channel depletion type, the present invention It is with N-channel MOS FET (enhanced N-MOSFET) for example, referring to Fig. 1, voltage-controlled adjustable in the embodiment of the present invention Another embodiment of inductance includes：
N-MOSFET101 and inductance coil 102, inductance coil 102 is by conductive core and the insulation for being wrapped in core surface Layer composition, inductance coil 102 include coiler part 1021 and electrode part 1022, and coiler part 1021 is arranged at N- Inside MOSFET101, one end of electrode part 1022 is connected with one end of coiler part 1021, the other end of electrode part 1022 The outside of voltage-controlled controllable impedance is exposed to via source S or drain D, forms inductance electrode 1023.Coiler part 1021 Part I be located at N-MOSFET101 N-type region, the Part II of coiler part 1021 is located at N-MOSFET101 source S The doped region 1011 of central gate between drain D, Part II are the side outward flange of coiler part 1021 so that coil Multiturn coil in part 1021 can be located at the doped region 1011 of central gate simultaneously.In order that mixing for central gate must be located at The Part II in miscellaneous area 1011 can form multiple contacts 1024 of access conductive path, can remove the of coiler part 1021 The insulating barrier of two parts, in order to prevent each contact 1024 from short cut with each other in the doped region 1011 of central gate, it can not wrap up There is the conductive core surface covering N-type semiconductor material of insulating barrier.
Preferably, the N-type semiconductor material and the half of n-type doping area of the conductive core surface covering of insulating barrier is not enclosed with Conductor material is identical.
Preferably, each circle coil of coiler part 1021 forms contact in the doped region 1011 of central gate, so The inductance value adjustable range of inductance coil 102 can be increased, improve degree of regulation.
The conductive core of inductance coil 102 can be conductor, it is preferred that the conductive core material of inductance coil 102 be for Gold, copper, silver or its alloy, because stability is higher.
The insulating layer material of inductance coil 102 can determine according to N-MOSFET manufacture craft, such as, if manufacture craft Including magnetron sputtering, etching, then the insulating layer material of selection is needed for high temperature resistant and corrosion-resistant material, such as ceramic material Material.
After controllable impedance access loop in embodiment corresponding to Fig. 1, by the electricity for changing voltage-regulation controllable impedance The principle of sensibility reciprocal can refer to Fig. 2.For convenience of explanation, N-MOSFET is enhanced that the Part I of coiler part 1021 is set Be placed in the doped region of source electrode, the one end of coiler part 1021 away from source S is connected with current-carrying part 1022, coiler part 1021 by 6 circle coils form, and according to it is numbered smaller rule each circle coil is numbered closer to source S, obtain the 1st circle, the 2nd The circle coil of circle ... the 6th, each circle coil are respectively equipped with the 1st contact, the 2nd contact ... accordingly in the doped region of central gate 6 contacts.For grid G plus forward voltage VG, inductance electrode 1023 and drain D access objective circuit, the power supply of objective circuit can be with For AC power AC.Work as VGDuring less than threshold voltage, N-MOSFET101 is not turned on, objective circuit open circuit.Increase VGTo V1When, V1 More than threshold voltage, the doped region of central gate forms conducting channel, and conducting channel now is referred to as into the first conducting channel Turned on inside 1012, N-MOSFET101 between source S and drain D, objective circuit forms conducting loop.Assuming that now only have 1st contact is located in the first conducting channel, then coiler part 1021 accesses the inductance value in loop mainly by the 1st circle to the 6th circle Coil determines, is designated as L1.Continue to increase VGTo V2When, the conducting channel now formed is referred to as the second conducting channel 1013, due to V2>V1, the width of the second conducting channel 1013 is more than the width of the first conducting channel 1012, and the second conducting channel 1013 includes Number of contacts increase, it is assumed that now the 1st contact to the 4th contact is respectively positioned in conducting channel, then accesses the inductance value in loop Mainly by the 5th circle to the 6th circle, this two circles coil determines, is designated as L2, easily draws L2<L1.The easy basis of those skilled in the art Described above obtains the inductance value regulation process and principle of the controllable impedance of the MOSFET structure of other three types, herein no longer Repeat.
In summary, by changing the grid voltage of MOSFET in controllable impedance, thus it is possible to vary conducting channel in MOSFET Width, and then change controllable impedance in inductance coil contact position, so as to change access circuit inductance coil length, The final inductance value for changing controllable impedance.
In actual use, field-effect transistor can also use junction field effect transistor (Junction Field- Effect Transistor, JFET), JFET is that the one kind being made up of p-n junction grid G and source S and drain D has amplification work( The three-terminal active device of energy.Its operation principle is exactly to realize the control to output current by the electric conductivity of voltage change raceway groove System.JFET includes N-channel JFET and P-channel JFET, the present invention with N-channel JFET (N-JFET) for example, referring to Fig. 3, Another embodiment of voltage-controlled controllable impedance includes in the embodiment of the present invention：
N-JFET301 and inductance coil 302, inductance coil 302 is by conductive core and the insulating barrier for being wrapped in core surface Composition, inductance coil 302 include coiler part 3021 and electrode part 3022, and coiler part 3021 is arranged at the doped region of source electrode The doped region of drain electrode in other words, i.e. in the n-type doping area 3011 of N-JFET, one end of electrode part 3022 and coiler part 3021 one end is connected, and the other end of electrode part 3021 is exposed to the outside of voltage-controlled controllable impedance, shape via grid G Into inductance electrode 3023.In order that obtaining multiple contacts 3024 that access conductive path is formed on inductance coil 302, electricity can be removed Feel the insulating barrier on coiler part surface, and N-type semiconductor material is covered on the conductive core surface for not being enclosed with insulating barrier, formed Two or more contacts 3024, position of the different contacts 3024 on coiler part 302 are different.The number of contact 3024 is got over More, the degree of regulation of inductance value is higher.When conducting channel in N-JFET301 be present, two or more contacts 3024 In the conducting channel inside N-JFET301, and by changing the width of conducting channel, thus it is possible to vary touched in conducting channel The number of point 3024.
Preferably, N-type semiconductor material and the n-type doping area 3011 of the conductive core surface covering of insulating barrier are not enclosed with Semi-conducting material it is identical.
The conductive core of inductance coil 302 can be conductor, it is preferred that the conductive core material of inductance coil 302 is copper Or platinum, because stability is higher.
The insulating layer material of inductance coil 302 can determine according to N-JFET manufacture craft, such as, if manufacture craft bag Include magnetron sputtering, etching, then the insulating layer material of selection is needed for high temperature resistant and corrosion-resistant material, such as ceramic material.
Preferably, coiler part 3021 is arranged between grid G, and is set perpendicular to grid G.
After controllable impedance access loop in embodiment corresponding to Fig. 3, by the electricity for changing voltage-regulation controllable impedance The principle of sensibility reciprocal can refer to Fig. 4.For convenience of explanation, coiler part 3021 enters close to one end of grid and electrode part 3022 Row is conductively connected, and coiler part 3021 is made up of 6 circle coils, according to closer to grid G, it numbers smaller rule to each circle line Circle is numbered, and obtains the 1st circle, the circle coil of the 2nd circle ... the 6th, and each circle coil is respectively equipped with the 1st contact, the 2nd contact ... 6 contacts.For grid G plus backward voltage VG, inductance electrode 3023 and source S access objective circuit, the power supply of objective circuit can be with For AC power AC.Work as VGWhen=0, N-JFET conducting channel does not exhaust, adds backward voltage, conducting channel for grid G Start to exhaust, conducting channel width diminishes.When continuing to inversely increase VGTo V1When, the first depletion region 3012 is formed, will now The conducting channel of formation is referred to as the first conducting channel, it is assumed that and now the 4th to the 6th contact is respectively positioned in the first conducting channel, due to Coiler part 3021 plays hindrance function to alternating current, and resistance is very big, therefore the electric current in coiler part 3021 can flow from the 4th contact Enter the first conducting channel, and be not passed through the 4th to the 6th circle coil.And because the 1st contact to the 3rd contact is respectively positioned on the first depletion region 3012, therefore electric current can only pass through the 1st to the 3rd circle coil, now access the inductance value of objective circuit mainly by the 1st circle to the 3rd Circle coil determines, is designated as L1.Continue to inversely increase VGTo V2When, depletion region continues to increase, and the width of conducting channel continues to reduce, The depletion region now formed is referred to as the second depletion region 3013, conducting channel is referred to as the second conducting channel.Due to | V2|>|V1|, the The width of two conducting channels is less than the width of the first conducting channel, and the number of contacts that the second conducting channel includes reduces, it is assumed that Now only have the 6th contact to be located in conducting channel, then to access the inductance value in loop mainly by this five circles line of the 1st circle to the 5th circle Circle determines, is designated as L2, easily draws L2>L1.What those skilled in the art easily obtained P-JFET structures according to the above description can The inductance value regulation process and principle of inductance are adjusted, here is omitted.
In summary, by changing the grid G voltage of JFET in controllable impedance, thus it is possible to vary the width of conducting channel in JFET Degree, and then change the contact position of inductance coil in controllable impedance, so as to change the length of the inductance coil of access circuit, finally Change the inductance value of controllable impedance.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description, The specific work process of device and unit, the corresponding process in preceding method embodiment is may be referred to, will not be repeated here.
In several embodiments provided herein, it should be understood that disclosed system, apparatus and method can be with Realize by another way.For example, device embodiment described above is only schematical, for example, the unit Division, only a kind of division of logic function, can there is other dividing mode, such as multiple units or component when actually realizing Another system can be combined or be desirably integrated into, or some features can be ignored, or do not perform.It is another, it is shown or The mutual coupling discussed or direct-coupling or communication connection can be the indirect couplings by some interfaces, device or unit Close or communicate to connect, can be electrical, mechanical or other forms.
The unit illustrated as separating component can be or may not be physically separate, show as unit The part shown can be or may not be physical location, you can with positioned at a place, or can also be distributed to multiple On NE.Some or all of unit therein can be selected to realize the mesh of this embodiment scheme according to the actual needs 's.
In addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit, can also That unit is individually physically present, can also two or more units it is integrated in a unit.Above-mentioned integrated list Member can both be realized in the form of hardware, can also be realized in the form of SFU software functional unit.
If the integrated unit is realized in the form of SFU software functional unit and is used as independent production marketing or use When, it can be stored in a computer read/write memory medium.Based on such understanding, technical scheme is substantially The part to be contributed in other words to prior art or all or part of the technical scheme can be in the form of software products Embody, the computer software product is stored in a storage medium, including some instructions are causing a computer Equipment (can be personal computer, server, or network equipment etc.) performs the complete of each embodiment methods described of the present invention Portion or part steps.And foregoing storage medium includes：USB flash disk, mobile hard disk, read-only storage (ROM, Read-Only Memory), random access memory (RAM, RandomAccess Memory), magnetic disc or CD etc. are various can store journey The medium of sequence code.
Described above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to before Embodiment is stated the present invention is described in detail, it will be understood by those within the art that：It still can be to preceding State the technical scheme described in each embodiment to modify, or equivalent substitution is carried out to which part technical characteristic；And these Modification is replaced, and the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (10)

  1. A kind of 1. voltage-controlled controllable impedance, it is characterised in that including：
    Field-effect transistor and inductance coil, the electrode of the field-effect transistor include source electrode, drain and gate, the inductance Coil is by conductive core and is wrapped in the insulating barrier on the conductive core surface and forms, the inductance coil include coiler part and Electrode part；
    The coiler part is arranged inside the field-effect transistor, one end and the coiler part of the electrode part One end is connected, the other end of the electrode part via the field-effect transistor electrode exposed to it is described it is voltage-controlled can The outside of inductance is adjusted, forms inductance electrode；
    The surface of the coiler part is at least provided with two contacts, and the conductive core at the contact is not covered with the insulation Layer, the conductive core at the contact is covered with the first semi-conducting material, type and the source of first semi-conducting material The semi-conducting material of the doped region of pole or the doped region of the drain electrode is identical, when conducting channel being present in the field-effect transistor When, the contact is located in the conducting channel, and with the change of the conducting channel width, positioned at the conducting channel In the number of the contact change.
  2. 2. voltage-controlled controllable impedance according to claim 1, it is characterised in that the coiler part is along perpendicular to institute The direction for stating grid is set.
  3. 3. voltage-controlled controllable impedance according to claim 1, it is characterised in that first semi-conducting material and institute The semi-conducting material for stating the doped region of source electrode or the doped region of the drain electrode is identical.
  4. 4. voltage-controlled controllable impedance according to claim 1, it is characterised in that the coiler part is by more than 2 circles Coil composition.
  5. 5. voltage-controlled controllable impedance according to claim 4, it is characterised in that each circle line of the coiler part Circle is provided with the contact.
  6. 6. voltage-controlled controllable impedance according to claim 1, it is characterised in that the conductive core of the inductance coil Material is gold, copper, silver or its alloy.
  7. 7. voltage-controlled controllable impedance according to any one of claim 1 to 6, it is characterised in that the field-effect Transistor is insulated-gate type field effect transistor MOSFET.
  8. 8. voltage-controlled controllable impedance according to claim 7, it is characterised in that the Part I of the coiler part The source electrode of the MOSFET or the doped region of grid are arranged at, the Part II of the coiler part is arranged at mixing for the grid Miscellaneous area, the contact are arranged at the outside of the Part II；
    The electrode portion lease making, exposed to the outside of the voltage-controlled controllable impedance, is formed by the source electrode or the drain electrode Inductance electrode.
  9. 9. voltage-controlled controllable impedance according to any one of claim 1 to 6, it is characterised in that the field-effect Transistor is junction field effect transistor JFET.
  10. 10. voltage-controlled controllable impedance according to claim 9, it is characterised in that the coiler part is arranged at institute State the doped region of source electrode or the doped region of the drain electrode；
    The electrode portion lease making is exposed to the outside of the voltage-controlled controllable impedance by the grid, forms inductance electrode.
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EP0109996A1 (en) * 1982-11-26 1984-06-13 International Business Machines Corporation Self-biased resistor structure and application to interface circuits realization
EP0662719A1 (en) * 1993-12-27 1995-07-12 Harris Corporation An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices
US6262468B1 (en) * 1995-12-22 2001-07-17 Micron Technology, Inc. Inductor formed at least partially in a substrate
CN1453803A (en) * 2002-04-22 2003-11-05 夏普株式会社 Solid inducer and producing method thereof
CN104638008A (en) * 2013-11-14 2015-05-20 英飞凌科技股份有限公司 Transistor and tunable inductance

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JPH09219521A (en) * 1997-03-24 1997-08-19 Seiko Epson Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109996A1 (en) * 1982-11-26 1984-06-13 International Business Machines Corporation Self-biased resistor structure and application to interface circuits realization
EP0662719A1 (en) * 1993-12-27 1995-07-12 Harris Corporation An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices
US6262468B1 (en) * 1995-12-22 2001-07-17 Micron Technology, Inc. Inductor formed at least partially in a substrate
CN1453803A (en) * 2002-04-22 2003-11-05 夏普株式会社 Solid inducer and producing method thereof
CN104638008A (en) * 2013-11-14 2015-05-20 英飞凌科技股份有限公司 Transistor and tunable inductance

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