CN106248221A - A kind of non-refrigerated infrared detector based on Graphene and in situ manufacture method - Google Patents
A kind of non-refrigerated infrared detector based on Graphene and in situ manufacture method Download PDFInfo
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- CN106248221A CN106248221A CN201610567749.3A CN201610567749A CN106248221A CN 106248221 A CN106248221 A CN 106248221A CN 201610567749 A CN201610567749 A CN 201610567749A CN 106248221 A CN106248221 A CN 106248221A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 24
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 19
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical group COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- -1 carbon atom Compound Chemical class 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910008310 Si—Ge Inorganic materials 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 23
- 238000002835 absorbance Methods 0.000 abstract description 14
- 238000005057 refrigeration Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 2
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/106—Arrays
Abstract
The invention discloses a kind of Graphene Non-refrigerated infrared detection focal plane device, including substrate；Arranging periodically infrared acquisition cell array in described substrate, single described infrared acquisition primitive includes the three-dimensional grapheme wall being positioned at suprabasil substrate and growth in situ on substrate.The Non-refrigerated infrared detection focal plane device that the present invention provides have employed the three-dimensional grapheme wall bridge deck structure as infrared absorption layer, enhance the ir-absorbance of infrared acquisition focal plane device, prove that the absorbance of the infrared energy of the mid and far infrared wave band of 8～14 μm can be improved about 20% by this device by test；The absorbance of 2 μm～the infrared energy of the near infrared band of 5 μm can improve 30% 45%, and the absorbance infrared for shortwave 12 μm can improve 30%～60%；So that the detection efficient of non-refrigeration focal surface device is promoted further；Meanwhile, this device is without anti-reflection film, thus simplifies device architecture to a certain extent and suitably reduce device cost.Additionally, this device is completely compatible with the preparation technology of existing Non-refrigerated infrared detection focal plane device.
Description
Technical field
Uncooled ir Jiao that the present invention relates to a kind of grapheme material in infrared imaging system technical field puts down
Area array detector.
Background technology
The basic functional principle of Non-refrigerated infrared detection focal plane device is: detected object infrared energy is by non-system
The INFRARED ABSORPTION layer film of cold infrared acquisition focal plane device is absorbed, and energy is passed by infrared absorption layer film absorption emittance
Pass thermally sensitive layer thin film, thus cause thermally sensitive layer film temperature to raise；Owing to thermally sensitive layer thin film has resistance temperature spy
Property, i.e. thermally sensitive layer thin film resistance value after being heated will occur corresponding change, read this by the electricity passage of device
Change, finally realizes the detection to infra-red radiation.
In the bridge deck structure of existing Non-refrigerated infrared detection focal plane device, INFRARED ABSORPTION layer film is respectively positioned on heat-sensitive layer
Between thin film, thermally sensitive layer thin film is positioned at infrared resonance intracavity portion simultaneously.It has been generally acknowledged that such structure is conducive to infra-red radiation
The absorption of energy.First detected object infrared energy is absorbed by infrared absorption layer film portion, and dump energy is through heat
Roundtrip by infrared absorption layer film portion in resonator cavity between infrared absorption layer and reflecting layer after photosensitive layer thin film
Absorb.Transfer energy to thermally sensitive layer thin film after infrared absorption layer film absorption energy, ultimately result in thermally sensitive layer thin-film electro
The generation of resistance temperature effects.Generally, infrared absorption layer has stronger reflection to Infrared, it is therefore desirable to thin at infrared absorption layer
Film surface increases by one layer of anti-reflection film；Further, since thermally sensitive layer thin film has stronger scattering process to light so that at resonance
The infrared light of intracavity roundtrip has certain loss through thermally sensitive layer thin film every time.Above-mentioned both sides reason causes existing
Some Non-refrigerated infrared detection focal plane device structures are complex, and cannot improve its ir-absorbance further and (there is reason
Opinion absorption limit).
In order to improve the INFRARED ABSORPTION efficiency of Non-refrigerated infrared detection focal plane device further, at non-brake method, detection Jiao is flat
Face micro-bridge structure takes a series of measure to strengthen the absorption of infra-red radiation: the deposition of metallic reflector, resonator cavity
Utilize and the design etc. of enhanced highpass filtering layer.Along with pixel dimension is more and more less, Uncooled infrared detection focal plane unit
Middle micro-bridge structure has bigger impact for device overall performance, different micro-bridge structures particularly photosurface multilayer material system
Optimization design etc., final INFRARED ABSORPTION efficiency and the infrared acquisition efficiency to device, all have large effect.
The Non-refrigerated infrared detection focal plane device that the present invention provides breaches the used of existing device architecture has thinking, by bridge
INFRARED ABSORPTION layer film in the structure of face substitutes for three-dimensional grapheme structure so that the ir-absorbance of device is significantly carried
Rise.First the infrared energy of detected object incides thermally sensitive layer thin film, due to thermally sensitive layer material (especially amorphous
Silicon or Amorphous Si-Ge Alloy) the least to the reflectance of light, and absorbance is more than 90%, so the energy of more than 90% is through warm
Outer absorbed layer thin film is incided after sensitive layer thin film；Incide the energy of outer absorbed layer thin film except a part is by outer absorbed layer thin film
Directly absorb.The Uncooled infrared detection focal plane device that the present invention provides, owing to only being only had Graphene by INFRARED ABSORPTION layer film
Constituting, inside does not has a thermally sensitive layer thin film, and therefore the infrared energy at bridge floor does not has scattering loss, major part final the most all by
INFRARED ABSORPTION layer film is absorbed, so the ir-absorbance of device is further improved, thus promotes non-brake method Jiao and puts down
The detection efficient of face device；Also due to thermally sensitive layer material is the least to the reflectance of light, and absorbance is more than 90%, so
Without increasing anti-reflection film at thermally sensitive layer film surface, thus simplify device architecture to a certain extent and suitably reduce device
Part cost.
To sum up, the Non-refrigerated infrared detection focal plane device that the present invention provides have employed three-dimensional grapheme as INFRARED ABSORPTION
The bridge deck structure of layer, enhances the ir-absorbance of infrared acquisition focal plane device, proves that this device is to 8～14 μm by test
The absorbance of infrared energy of mid and far infrared wave band can improve about 20%；To the near infrared band of 2 μm～5 μm
The absorbance of infrared energy can improve 30%-45%, for the absorbance that shortwave 1-2 μm is infrared can improve 30%～
60%；So that the detection efficient of non-refrigeration focal surface device is promoted further；Meanwhile, this device without anti-reflection film,
Thus simplify device architecture to a certain extent and suitably reduce device cost.Additionally, this device and existing non-brake method
The preparation technology of infrared acquisition focal plane device is completely compatible.
Summary of the invention
The present invention provides a kind of Graphene Non-refrigerated infrared detection focal plane device, and original device architecture pair broken through by this device
The restriction of wavelength selectivity, employing microwave plasma deposition technique is in bridge deck structure situ growing three-dimensional graphene-structured, real
Verify that bright such change makes the ir-absorbance of non-refrigeration focal surface device be significantly improved, thus promote non-brake method
The detection efficient of focal plane device；Meanwhile, the bridge deck structure of this device is no longer necessary to anti-reflection film, simplifies device architecture accordingly also
Can suitably reduce the cost of manufacture of device.
Technical solution of the present invention is as follows: a kind of Graphene Non-refrigerated infrared detection focal plane device, including substrate；Described base
Arranging periodically infrared acquisition cell array, single described infrared acquisition primitive includes being positioned at suprabasil substrate and original position at the end
The three-dimensional grapheme wall being grown on substrate.
As preferably, described substrate is thermo-responsive thin-film material, includes but not limited to silicon nitride, non-crystalline silicon, amorphous silicon germanium
Alloy or vanadium oxide.
As preferably, ROIC integrated circuit is set in described substrate.
As preferably, the size of described substrate and three-dimensional grapheme wall is 15-20 micron, and thickness is 100-150 nanometer.
The present invention also aims to provide a kind of method of original position fast-growth three-dimensional grapheme wall, the party on substrate
Method is without complicated pretreating process and pyroprocess, and treatment process more simplifies and has compatibility.
It is as follows that the original position of the present invention prepares scheme: the silicon nitride-silicon substrate with pre-buried electrode is placed directly in etc. from
In daughter chemical vapor deposition unit；By vacuum degree control at 10-30 millibar, it is passed through working gas loading carbon source and sends out to plasma
Raw region, it is not necessary to heating；Three-dimensional grapheme array wall just can be obtained on silicon nitrate substrate in certain time.
As preferably, the carbon source of the present invention is to contain SP simultaneously3And SP2The organic compound of carbon atom；More preferably formic acid first
Ester.
As preferably, working gas is selected from hydrogen, one or more in argon or helium.
Alternatively, working gas, in addition to being loaded into carbon source methyl formate, includes but not limited to other carbon sources, such as first
Alkane, methanol, ethanol etc..In actual rapid plasma course of reaction, amorphous carbon and crystal carbon such as diamond can be formed, be all
These raw materials, it is important to the selection of reducibility gas uses, and can adjust its ratio.
In above-mentioned any technical scheme, the radio-frequency power of plasma CVD device is 100-500W.
In above-mentioned any technical scheme, H2The flow velocity that flow velocity is 10-60sccm, Ar be 10-60sccm；Methyl formate by
Ar gas is loaded into, and its consumption is limited directly by the flow rate of Ar gas.
In above-mentioned any technical scheme, the deposition growing time of Graphene is 0.1-1 hour.
The present invention also provides for the preparation method of a kind of Graphene Non-refrigerated infrared detection focal plane device, above-mentioned including using
Method is at growth in situ three-dimensional grapheme wall on the silicon nitride-silicon substrate of pre-buried electrode；Use photoetching technique, to obtaining thin film
Carry out array processing, it is thus achieved that periodically infrared acquisition primitive.Plasma deposition apparatus extension on thin film is utilized to prepare nitrogen
SiClx thin film is packaged, it is thus achieved that graphene array Infrared Detectors.
The beneficial effects of the present invention is: the present invention is by being directly placed at plasma reaction pre-buried electrode substrate
Region, and without controlling heating-up temperature；Compound methyl formate is incorporated in reaction system, disconnects under hydrogen plasma effect
C-O-C obtains the-CH of two parts simultaneously3Key, suitably increases the content of carbon, thus realizes quickly quickly making in pre-buried electrode substrate
The purpose of standby Graphene flowers array, this kind of method can directly utilize prepares Graphene battle array in infrared detector unit substrate
Row, thus obtain Graphene Infrared Detectors, this structure substantially increases the absorption efficiency of LONG WAVE INFRARED.For realizing real meaning
On carbon cladding Infrared Detectors make provide a succinct method.
Accompanying drawing explanation
Accompanying drawing 1 is device architecture schematic diagram 1. substrate directly preparing Graphene Infrared Detectors；6 infrared acquisition primitives；
Lateral structural representation 1. substrate of accompanying drawing 2 three-dimensional grapheme Infrared Detectors, 2.ROIC integrated circuit, 3. lining
The end, 4. the Graphene wall of growth in situ, 5. silicon nitride encapsulation；
Accompanying drawing 3 is the high power top view of the scanning electron microscope of coated graphite alkene flowers array wall in pre-buried electrode substrate
Accompanying drawing 4 is the profile of the scanning electron microscope of coated graphite alkene flowers array wall in pre-buried electrode substrate.
Detailed description of the invention
In order to be further appreciated by the present invention, below in conjunction with embodiment, the preferred embodiment of the invention is described, but
Should be appreciated that these describe simply as to further illustrate the features and advantages of the present invention rather than to the claims in the present invention
Limit.
The structure of the non-refrigerated infrared detector of the Graphene of the present invention includes: arrange periodically infrared acquisition in substrate 1
Primitive 6 forms array, and single described infrared acquisition primitive 6 includes that the substrate 3 being positioned in substrate 1 and growth in situ are on substrate 3
Graphene wall 4.Substrate 3 is thermo-responsive thin-film material, such as silicon nitride, non-crystalline silicon, Amorphous Si-Ge Alloy or vanadium oxide etc..Base
ROIC integrated circuit 2 is set at the end 1.
Embodiment 1
Utilize radio frequency plasma chemical gaseous phase depositing process, in the middle of quartz tube type vacuum drying oven, first place pre-buried electrode
Silicon nitride-silicon substrate, is then maintained at 10 millibars with mechanical pump by the vacuum of tube furnace, is passed through H2；Open Ar and be loaded into formic acid
Methyl ester is to radio frequency plasma generation area, H2The flow velocity that flow velocity is 50sccm, Ar be 50sccm, open radio-frequency power supply and start to sink
Long-pending, growth time is 0.5 hour, obtains Graphene wall array on the surface of silicon nitrate substrate.
Use photoetching technique, carry out array processing to obtaining thin film, it is thus achieved that periodically infrared acquisition primitive.
Utilize plasma deposition apparatus extension on thin film to prepare silicon nitride film to be packaged, it is thus achieved that graphene array
Infrared Detectors.
Embodiment 2
Utilize plasma chemical vapor deposition process, in the middle of quartz tube type vacuum drying oven, first place silicon nitrate substrate, use
The vacuum of vacuum tube furnace is evacuated to 30 millibars by mechanical pump, is passed through H2, then open Ar loading methyl formate and send out to plasma
Raw region, H2The flow velocity that flow velocity is 30sccm, Ar be 40sccm, open radio-frequency power supply and start deposition, growth time is 0.2 little
Time, obtain three-dimensional grapheme array on the surface of silicon nitrate substrate.
Use photoetching technique, carry out array processing to obtaining thin film, it is thus achieved that periodically infrared acquisition primitive.
Utilize plasma deposition apparatus extension on thin film to prepare silicon nitride film to be packaged, the infrared spy of array
Survey device.
Beneficial outcomes
The non-refrigerate infrared focal plane array seeker of the three-dimensional grapheme structure of the present invention, by the lowest at bridge floor layer
Temperature growing three-dimensional graphene layer realizes connecting with heat-sensitive layer and circuit, improves the sensitive detection parts efficiency of light absorption at 8-14 micron.
Compared with prior art, the advantage that the present invention has the following aspects:
1, by the bridge floor direct growth three-dimensional grapheme wall array structure at detector, bridge floor layer can be effectively improved
INFRARED ABSORPTION, more infrared energy directly arrives detector cells, makes detection sensitiveer.
2, the low-temperature original position growth method taked is good with traditional MEMS processing packaging technology compatibility, is substantially reduced device
Growth difficulty and cost, it is possible to be effectively improved the thermal efficiency of detector, improve overall detection performance.
The above, be only presently preferred embodiments of the present invention, and the present invention not makees any pro forma restriction, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any technology people being familiar with this specialty
Member, in the range of without departing from technical solution of the present invention, when the method for available the disclosure above and technology contents make a little more
Move or be modified to the Equivalent embodiments of equivalent variations, as long as being the content without departing from technical solution of the present invention, according to the present invention's
Any simple modification, equivalent variations and the modification that above example is made by technical spirit, still falls within technical solution of the present invention
In the range of.
Claims (10)
1. a Graphene Non-refrigerated infrared detection focal plane device, it is characterised in that include substrate；In described substrate, week is set
Phase property infrared acquisition cell array, single described infrared acquisition primitive includes being positioned at suprabasil substrate and growth in situ in substrate
On three-dimensional grapheme wall.
2. Graphene Non-refrigerated infrared detection focal plane device as claimed in claim 1, it is characterised in that described substrate is temperature-sensitive
Sense thin-film material, includes but not limited to silicon nitride, non-crystalline silicon, Amorphous Si-Ge Alloy or vanadium oxide.
3. Graphene Non-refrigerated infrared detection focal plane device as claimed in claim 1 or 2, it is characterised in that in described substrate
ROIC integrated circuit is set.
4. the method for original position fast-growth three-dimensional grapheme wall on substrate, it is characterised in that comprise the steps: to have
Silicon nitride-the silicon substrate having pre-buried electrode is placed directly in plasma CVD device；Vacuum degree control is existed
10-30 millibar, is passed through working gas and is loaded into carbon source to plasma generation area, it is not necessary to heating；Just can be in nitridation in certain time
Three-dimensional grapheme array wall is obtained on silicon substrate.
5. method as claimed in claim 4, it is characterised in that described carbon source is to contain SP simultaneously3And SP2Organising of carbon atom
Compound.
6. method as described in claim 4 or 5, it is characterised in that described carbon source is methyl formate.
7. method as described in claim 4 or 5, it is characterised in that described working gas is selected from hydrogen, in argon or helium
Plant or multiple.
8. method as described in claim 4 or 5, it is characterised in that the radio-frequency power of plasma CVD device is
100-500W。
9. method as described in claim 4 or 5, it is characterised in that described working gas is H2And Ar, H2Flow velocity be 10-
The flow velocity of 60sccm, Ar is 10-60sccm；Methyl formate is loaded into by Ar gas, and its consumption is limited directly by the velocity ratio of Ar gas
Example.
10. the preparation method of a Graphene Non-refrigerated infrared detection focal plane device, it is characterised in that include using right to want
Seek 4-9 any described method growth in situ three-dimensional grapheme wall on the silicon nitride-silicon substrate of pre-buried electrode；Use photoetching skill
Art, carries out array processing to obtaining thin film, it is thus achieved that periodically infrared acquisition primitive；Utilize plasma deposition apparatus on thin film
Face extension is prepared silicon nitride film and is packaged, Graphene Non-refrigerated infrared detection focal plane device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111678881A (en) * | 2020-06-22 | 2020-09-18 | 浙江工业大学 | Air pollutant detector based on graphene infrared emission unit |
| CN113851552A (en) * | 2021-09-27 | 2021-12-28 | 苏州微光电子融合技术研究院有限公司 | Graphene vanadium oxide infrared detector, preparation method and application thereof |
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