CN106229334B - A kind of OLED device and preparation method thereof - Google Patents

A kind of OLED device and preparation method thereof Download PDF

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Publication number
CN106229334B
CN106229334B CN201610910336.0A CN201610910336A CN106229334B CN 106229334 B CN106229334 B CN 106229334B CN 201610910336 A CN201610910336 A CN 201610910336A CN 106229334 B CN106229334 B CN 106229334B
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luminescent layer
sub
pixel
oled device
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CN106229334A (en
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金江江
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a kind of OLED device and preparation method thereof.The production method includes:One substrate is provided;OLED device ontology is formed on substrate, wherein OLED device ontology includes multiple luminescent layers, and a luminescent layer in multiple luminescent layers partly overlaps with other two luminescent layer setting respectively;The encapsulating structure of encapsulation OLED device main body is formed in OLED device main body, wherein encapsulating structure is provided with monochromatic filter, and one of monochromatic filter and overlapping areas are correspondingly arranged;Wherein, one of overlapping areas forms a sub-pixel, and the other of overlapping areas forms another sub-pixel after monochromatic filter.The present invention by by monochromatic filter preparation in OLED device, while by overlapping luminescent layer to reduce the use of metal mask plate, so as to realize the OLED device of high pixel density with lower production cost, lower power consumption.

Description

A kind of OLED device and preparation method thereof
Technical field
The present invention relates to field of liquid crystal display, more particularly to a kind of OLED device and preparation method thereof.
Background technique
Active matrix organic light-emitting (Active Matrix Organic Light Emitting Display, AMOLED) Display, have it is thinner it is lighter, actively shine without backlight, without viewing angle problem, high-resolution, high brightness, response quickly, Low energy consumption, use temperature range is wide, shock resistance is strong, can be achieved soft display the features such as so that displayer and Development priority as display industry.
In order to realize the high pixel density of AMOLED, a kind of existing way is:Using White OLED (WOLED) and colored Optical filter realizes the AMOLED of high pixel density, is needed using this technology using three-colour filter, which results in very The light injury of big degree, to considerably increase the power consumption of device.Another way of the prior art is:Using RGB block form AMOLED realizes the AMOLED of high pixel density, needs multiple metal mask plates (FMM) come fine mask using this technology Full color pattern, a large amount of FMM manufacturing process is sufficiently complex, to improve production cost.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of OLED device and preparation method thereof, can be with lower production Cost, lower power consumption realize the OLED device of high pixel density.
In order to solve the above technical problems, one technical scheme adopted by the invention is that:A kind of OLED device is provided, the device Including substrate, the OLED device ontology being set on substrate and the encapsulating structure for encapsulating OLED device ontology, the encapsulating structure It is provided with monochromatic filter;OLED device ontology includes multiple luminescent layers, and a luminescent layer in multiple luminescent layers is respectively and separately Outer two luminescent layers partly overlap setting;Wherein, one of overlapping areas forms a sub-pixel, in overlapping areas Another one another sub-pixel is formed after monochromatic filter.
Wherein, multiple luminescent layers include the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer, second Luminescent layer and the first luminescent layer partly overlap setting, the second luminescent layer not region Chong Die with the first luminescent layer and third luminescent layer It overlaps;Wherein, the overlapping region of the first luminescent layer and the second luminescent layer forms the first sub-pixel, and the first luminescent layer does not weigh The second sub-pixel of folded region formation, the second luminescent layer and third luminescent layer overlapping region filter out second by monochromatic filter and shine Third sub-pixel is formed after layer, third luminescent layer forms the 4th sub-pixel.
Wherein, the first luminescent layer is blue light-emitting layer, and the second luminescent layer is Yellow luminous layer, and third luminescent layer is red hair Photosphere, the 4th luminescent layer are green light emitting layer, and the first sub-pixel is white sub-pixels, and the second sub-pixel is blue subpixels, the Three sub-pixels are red sub-pixel, and the 4th sub-pixel is green sub-pixels.
Wherein, encapsulating structure include the first inorganic layer being stacked, it is the first organic layer, monochromatic filter, second organic Layer and the second inorganic layer;Wherein, the first inorganic layer covers OLED device ontology, monochromatic filter and the second luminescent layer and third is sent out The overlapping region of photosphere is correspondingly arranged.
In order to solve the above technical problems, another technical solution used in the present invention is:A kind of system of OLED device is provided Make method, which includes:One substrate is provided;OLED device ontology is formed on substrate, wherein OLED device ontology packet Multiple luminescent layers are included, a luminescent layer in multiple luminescent layers partly overlaps with other two luminescent layer setting respectively;In OLED The encapsulating structure of encapsulation OLED device ontology is formed in device body, wherein the encapsulating structure is provided with monochromatic filter, monochromatic One of optical filter and overlapping areas are correspondingly arranged;Wherein, one of overlapping areas forms a sub-pixel, phase The other of mutual overlapping region forms another sub-pixel after monochromatic filter.
Wherein, multiple luminescent layers include the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer, second Luminescent layer and the first luminescent layer partly overlap setting, the second luminescent layer not part Chong Die with the first luminescent layer and third luminescent layer It overlaps;Wherein, the overlapping region of the first luminescent layer and the second luminescent layer forms the first sub-pixel, and the first luminescent layer does not weigh The overlapping region of the second sub-pixel of folded region formation, the second luminescent layer and third luminescent layer is after monochromatic filter optical filtering processing Third sub-pixel is formed, third luminescent layer forms the 4th sub-pixel.
Wherein, the first luminescent layer is blue light-emitting layer, and the second luminescent layer is Yellow luminous layer, and third luminescent layer is red hair Photosphere, the 4th luminescent layer are green light emitting layer, and the first sub-pixel is white sub-pixels, and the second sub-pixel is blue subpixels, the Three sub-pixels are red sub-pixel, and the 4th sub-pixel is green sub-pixels.
Wherein, include the step of forming OLED device ontology on substrate:OLED device is formed using public metal mask plate Hole injection layer, hole-transporting layer, electron transfer layer, electron injecting layer and the cathode of part ontology;The first metal is utilized respectively to cover Template, the second metal mask plate, third metal mask plate and the 4th metal mask plate form the first of OLED device ontology and shine Layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer;Wherein, the opening of the first metal mask plate, the second metal mask plate Greater than the opening of third metal mask plate, the 4th metal mask plate.
Wherein, include the step of forming the monochromatic filter of encapsulation OLED device ontology on OLED device ontology:? First inorganic layer of deposition covering OLED device ontology on OLED device ontology;Deposition covering first is organic on the first inorganic layer Layer;Monochromatic filter is formed on the first organic layer, wherein monochromatic filter is Chong Die with the second luminescent layer and third luminescent layer Region is correspondingly arranged;The second organic layer is deposited on monochromatic filter;The second inorganic layer is deposited on the second organic layer.
Wherein, include the step of forming monochromatic filter on the first organic layer:Negativity light is coated on the first organic layer Resistance layer;The exposure region being developed to corresponding to third sub-pixel is exposed to negativity photoresist layer;It is deposited in exposure region monochromatic Optical filter;Remaining negativity photoresist layer is removed to form monochromatic filter on the first organic layer.
The beneficial effects of the invention are as follows:It is in contrast to the prior art, OLED device of the invention and preparation method thereof By preparing monochromatic filter in OLED device, while by overlapping luminescent layer to reduce making for metal mask plate With so as to realize the OLED device of high pixel density with lower production cost, lower power consumption.
Detailed description of the invention
The flow chart of the production method of the OLED device of Fig. 1 embodiment of the present invention;
Figure 1A is the distribution schematic diagram of pixel in the OLED device of production method shown in Fig. 1 in the production process;
Figure 1B be production method shown in Fig. 1 use in the production process public metal mask plate, the first metal mask plate, The opening schematic diagram of second metal mask plate, third metal mask plate;
Fig. 2 is the sub-process figure of the encapsulating structure that encapsulation OLED device ontology is formed on OLED device ontology in Fig. 1;
Fig. 2A -2G is the structural schematic diagram of the OLED device of production method shown in Fig. 1 in the production process;
Fig. 3 is the structural schematic diagram of OLED device made from production method shown in Fig. 1.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Fig. 1 is the flow chart of the production method of the OLED device of the embodiment of the present invention.As shown in Figure 1, the production method packet Include step:
Step S11:One substrate is provided.
Step S12:OLED device ontology is formed on substrate, wherein OLED device ontology includes multiple luminescent layers, multiple A luminescent layer in luminescent layer partly overlaps with other two luminescent layer setting respectively.
In step s 12, multiple luminescent layers include that the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th are luminous Layer, the second luminescent layer and the first luminescent layer partly overlap setting, the second luminescent layer not part Chong Die with the first luminescent layer and the Three luminescent layers overlap.
Wherein, it is specifically included the step of forming OLED device ontology on substrate:It is formed using public metal mask plate Hole injection layer, hole-transporting layer, electron transfer layer, electron injecting layer and the cathode of OLED device ontology;It is utilized respectively first Metal mask plate, the second metal mask plate, third metal mask plate and the 4th metal mask plate form the of OLED device ontology One luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer;Wherein, the first metal mask plate, the second metal mask plate Opening be greater than third metal mask plate, the 4th metal mask plate opening.
It will be understood to those skilled in the art that since the opening of the first metal mask plate, the second metal mask plate is larger, So as to reduce the required precision of metal mask plate, to reduce the complexity of production technology, and then production cost is saved.
In the present embodiment, the second luminescent layer and the first luminescent layer partly overlap setting, the second luminescent layer not with the first hair The region of photosphere overlapping is overlapped with third luminescent layer.
In the present embodiment, the overlapping region of the first luminescent layer and the second luminescent layer forms the first sub-pixel, and first shines The underlapped region of layer forms the second sub-pixel, and the list being subsequently formed is passed through in the region that the second luminescent layer and third luminescent layer are overlapped Colo(u)r filter forms third sub-pixel after filtering out the second luminescent layer, and third luminescent layer forms the 4th sub-pixel.Wherein, the first son Pixel, the second sub-pixel, third sub-pixel and the 4th sub-pixel are distributed in a rectangular area in being symmetrical set up and down Four corner locations.
In the present embodiment, the first luminescent layer is blue light-emitting layer, and the second luminescent layer is Yellow luminous layer, third luminescent layer For red light emitting layer, the 4th luminescent layer is green light emitting layer, and the first sub-pixel is white sub-pixels, and the second sub-pixel is blue Pixel, third sub-pixel are red sub-pixel, and the 4th sub-pixel is green sub-pixels.
It is pixel in the OLED device of production method shown in Fig. 1 in the production process please also refer to Figure 1A, Figure 1A Distribution schematic diagram.As shown in Figure 1A, each pixel in OLED device ontology includes four sub-pixels, the distribution of four sub-pixels Four corner locations in a rectangular area, respectively positioned at the white sub-pixels W in the upper left corner, the lower left corner blue subpixels B, The green sub-pixels G of the red sub-pixel R in the upper right corner and right small angle.
It is Figure 1B please also refer to Figure 1B, Figure 1B is the public metal that production method shown in Fig. 1 uses in the production process Mask plate, the first metal mask plate, the second metal mask plate, third metal mask plate opening schematic diagram.As shown in Figure 1B, public It is maximum with the opening 10 of metal mask plate, cover four sub-pixels.The opening 20 of first metal mask plate is covered in being vertically arranged Lid white sub-pixels W and blue subpixels B.The opening 30 of second metal mask plate in horizontally disposed, covering white sub-pixels W and Red sub-pixel R.The opening 40 of third metal mask plate is minimum, covers green sub-pixels G.In addition, the 4th metal mask plate It is open similar with the openings of sizes of third metal mask plate, for the sake of simplicity, no longer describes.
Step S13:The encapsulating structure of encapsulation OLED device ontology is formed on OLED device ontology, wherein the encapsulation knot Structure is provided with monochromatic filter, and one of monochromatic filter and overlapping areas are correspondingly arranged.
In step s 13, the overlapping region of monochromatic filter and the second luminescent layer and third luminescent layer is correspondingly arranged.
Please also refer to the encapsulation for forming encapsulation OLED device ontology on OLED device ontology that Fig. 2, Fig. 2 are in Fig. 1 The sub-process figure of structure.As shown in Fig. 2, the encapsulating structure for forming encapsulation OLED device ontology on OLED device ontology specifically wraps Include following steps:
Step S131:The first inorganic layer of deposition covering OLED device ontology on OLED device ontology.
In step S131, the first nothing is deposited on OLED device ontology using PECVD, ALD, PLD or Sputter technique Machine layer, wherein the covering of the first inorganic layer and encapsulation OLED device ontology.Preferably, the first inorganic layer with a thickness of 0.5~1 μm, The material of first inorganic layer is preferably Al2O3、TiO2, at least one of SiNx, SiCNx, SiOx.Those skilled in the art It is appreciated that the introducing of the first inorganic layer, can be enhanced the effect of the waterproof oxygen of OLED device.
It is the schematic diagram of the section structure for being formed with the substrate of the first inorganic layer please also refer to Fig. 2A, Fig. 2A.Such as Fig. 2A institute Show, OLED device ontology 201 is arranged on the substrate 101, and the first inorganic layer 301 covers OLED device ontology 201.
Step S132:The first organic layer is deposited on the first inorganic layer.
In step S132, being deposited first on the first inorganic layer using IJP, PECVD or slot coating technique is had Machine layer.Preferably, the first organic layer with a thickness of 4~8 μm, the material of the first organic layer is preferably Acrylate, HMDSO, poly- At least one of esters of acrylic acid, polycarbonate, polystyrene.It will be understood to those skilled in the art that first is organic The introducing of layer can slow down stress of the OLED device when bending, folding, while can prevent particulate pollutant from entering OLED device In part.
Please also refer to Fig. 2 B, Fig. 2 B is the schematic diagram of the section structure for being formed with the substrate of the first organic layer.Such as Fig. 2 B institute Show, the first organic layer 401 is arranged on the first inorganic layer 301.Preferably, the first organic layer 401 and OLED device ontology 201 are right It should be arranged.
Step S133:Negativity photoresist layer is coated on the first organic layer.
In step S133, one layer of negativity photoresist is coated on the first organic layer using IJP or Slot coating technique Layer.Preferably, negativity photoresist layer is preferably fluorinated negativity photoresist layer.
Please also refer to Fig. 2 C, Fig. 2 C is the schematic diagram of the section structure for being formed with the substrate of negativity photoresist layer.Such as Fig. 2 C institute Show, negativity photoresist layer 601 is arranged on the first organic layer 401.
Step S134:Negativity photoresist layer is exposed and is developed to correspond to the second luminescent layer and third luminescent layer The exposure region of overlapping region.
Please also refer to Fig. 2 D, Fig. 2 D is the cross-section structure signal that the substrate after development is exposed to negativity photoresist layer Figure.As shown in Figure 2 D, negativity photoresist layer 601 is arranged on the first organic layer 401, wherein negativity photoresist layer 601 includes corresponding to The exposure region 602 of the overlapping region of second luminescent layer and third luminescent layer.
Step S135:Monochromatic filter is deposited in exposure region;
In step S135, in exposure region coating for filtering the ink of the second luminescent layer.Preferably, the ink be with Very strong hydrophobic ink, while the ink is low temperature curing type or UV curable ink.Wherein, after ink solidification, Exposure region forms monochromatic filter.
Please also refer to Fig. 2 E, Fig. 2 E is the schematic diagram of the section structure for being formed with monochromatic filter and negativity photoresist layer.Such as Shown in Fig. 2 E, the exposure region 602 of negativity photoresist layer 601 is arranged in monochromatic filter 501.
Step S136:Remaining negativity photoresist layer is removed to form monochromatic filter on the first organic layer;
Please also refer to Fig. 2 F, Fig. 2 F is the schematic diagram of the section structure for being formed with monochromatic filter.As shown in Figure 2 E, monochromatic Optical filter 501 is arranged on the first organic layer 401, the overlay region of monochromatic filter 501 and the second luminescent layer and third luminescent layer Domain is correspondingly arranged.
Step S137:The second organic layer is deposited on monochromatic filter;
In step S137, second is deposited on monochromatic filter using IJP, PECVD or slot coating technique has Machine layer.Preferably, the second organic layer with a thickness of 4~8 μm, the material of the second organic layer is preferably Acrylate, HMDSO, poly- At least one of esters of acrylic acid, polycarbonate, polystyrene.Wherein, the function of the second organic layer and the first organic layer It is identical.
In the present embodiment, the thickness of the second organic layer and the first organic layer is identical, material is identical.In other embodiments In, the second organic layer and the first organic layer can also, material identical with thickness be not identical or thickness is not identical, material is identical or Thickness, material are all different.
Please also refer to Fig. 2 G, Fig. 2 G is the schematic diagram of the section structure for being formed with the second organic layer.As shown in Figure 2 G, second Organic layer 402 is arranged on monochromatic filter 501.
Step S138:The second inorganic layer is deposited on the second organic layer.
In step S138, it is inorganic that second is deposited on the second organic layer using PECVD, ALD, PLD or Sputter technique Layer.Preferably, wherein the second inorganic layer cover the second organic layer and encapsulation the first inorganic layer, the second inorganic layer with a thickness of 0.5 ~1 μm, the material of the second inorganic layer is preferably Al2O3、TiO2, at least one of SiNx, SiCNx, SiOx.Wherein, the second nothing The function of machine layer and the first inorganic layer is identical
In the present embodiment, the thickness of the second inorganic layer and the first inorganic layer is identical, material is identical.In other embodiments In, the second inorganic layer and the first inorganic layer can also, material identical with thickness be not identical or thickness is not identical, material is identical or Thickness, material are all different.
Since then, OLED device production finishes.
It is the structural schematic diagram of OLED device made from production method shown in Fig. 1 please also refer to Fig. 3, Fig. 3.Such as Fig. 3 institute Show, OLED device includes substrate 101, OLED device ontology 201 and encapsulating structure 11.
OLED device ontology 201 is arranged on the substrate 101, and encapsulating structure 11 is arranged on OLED device ontology 201 and seals OLED device ontology 201 is filled to form OLED device.It changes for an angle, the encapsulating structure 11 in the present invention is prepared in OLED device In part.
Wherein, OLED device ontology 201 includes the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer, Second luminescent layer and the first luminescent layer partly overlap setting, and the second luminescent layer not send out by the region Chong Die with the first luminescent layer and third Photosphere overlaps.
Wherein, encapsulating structure 11 is organic including the first inorganic layer 301, the first organic layer 401, monochromatic filter 501, second Layer 402 and the second inorganic layer 302.
Specifically, the first inorganic layer 301 covers OLED device ontology 201.The setting of first organic layer 401 is inorganic first On layer 301.Monochromatic filter 501 is arranged on the first organic layer 401, wherein monochromatic filter 501 and the second luminescent layer and the The region of three luminescent layers overlapping is correspondingly arranged, for filtering out the second luminescent layer.Second organic layer 402 is arranged in monochromatic filter On 501.Second inorganic layer 302 is arranged on the second organic layer 402 and the first inorganic layer 301 of covering.
Wherein, the overlapping region of the first luminescent layer and the second luminescent layer forms the first sub-pixel, and the first luminescent layer does not weigh Folded region forms the second sub-pixel, and the region that the second luminescent layer and third luminescent layer are overlapped is by the monochromatic filter in encapsulating structure 11 Third sub-pixel is formed after 501 optical filtering of mating plate processing, third luminescent layer forms the 4th sub-pixel.
Wherein, it forms the first metal mask plate of the first luminescent layer, form second metal mask plate of the second luminescent layer Opening is greater than the opening for forming the third metal mask plate of third luminescent layer, forming the 4th metal mask plate of the 4th luminescent layer.
In the present embodiment, the first luminescent layer is blue light-emitting layer, and the second luminescent layer is Yellow luminous layer, third luminescent layer For red light emitting layer, the 4th luminescent layer is green light emitting layer, and the first sub-pixel is white sub-pixels, and the second sub-pixel is blue Pixel, third sub-pixel are red sub-pixel, and the 4th sub-pixel is green sub-pixels.
It will be understood to those skilled in the art that in the present embodiment, white sub-pixels are sent out by blue light-emitting layer and yellow It is formed after photosphere superposition, red sub-pixel is filtered after being superimposed by red light emitting layer and Yellow luminous layer by the monochrome in encapsulating structure 11 Mating plate 501 namely Red lightscreening plate realize that red light emitting layer shines after filtering out Yellow luminous layer.That is, of the invention OLED device ontology 201 is during production, compared with the AMOLED device that tradition uses three-colour filter, due to only needing pair A kind of color namely red filter, and can reduce the loss of light, and then reduce the power consumption of device.
It changes for an angle, the blue light and blue subpixels in white sub-pixels share a metal mask plate namely first Metal mask plate, yellow light and red sub-pixel in white sub-pixels share a metal mask plate namely the second metal mask Plate.That is, OLED device ontology 201 of the invention is during production, compared with traditional RGB block form AMOLED, The usage quantity of metal mask plate can be reduced, and then production cost can be reduced.
It will be understood to those skilled in the art that the present embodiment be by taking OLED device ontology includes four luminescent layers as an example into Row explanation, invention is not limited thereto, as long as the luminescent layer met in multiple luminescent layers shines with other two respectively Layer partly overlaps setting, and one of overlapping areas forms a sub-pixel, and the other of overlapping areas is by sealing Another sub-pixel is formed after monochromatic filter in assembling structure to be within the scope of the invention.
The beneficial effects of the invention are as follows:It is in contrast to the prior art, OLED device of the invention and preparation method thereof By realizing four sub-pixels to subtract in OLED device, while by overlapping luminescent layer monochromatic filter preparation The use of few metal mask plate, so as to realize the OLED device of high pixel density with lower production cost, lower power consumption Part.
Mode the above is only the implementation of the present invention is not intended to limit the scope of the invention, all to utilize this Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it is relevant to be applied directly or indirectly in other Technical field is included within the scope of the present invention.

Claims (8)

1. a kind of OLED device, which is characterized in that the device includes substrate, the OLED device sheet being set on the substrate The encapsulating structure of body and the encapsulation OLED device ontology, the encapsulating structure are provided with monochromatic filter;
The OLED device ontology includes multiple luminescent layers, and a luminescent layer in multiple luminescent layers shines with other two respectively Layer partly overlaps setting;
Wherein, one of overlapping areas forms a sub-pixel, and the other of overlapping areas passes through the monochrome Another sub-pixel is formed after optical filter;
The multiple luminescent layer includes the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer, second hair Photosphere and first luminescent layer partly overlap setting, second luminescent layer not the region Chong Die with first luminescent layer with The third luminescent layer overlaps;
Wherein, the overlapping region of first luminescent layer and second luminescent layer forms the first sub-pixel, and described first shines The underlapped region of layer forms the second sub-pixel, and the list is passed through in second luminescent layer and third luminescent layer overlapping region Colo(u)r filter forms third sub-pixel after filtering out second luminescent layer, and the third luminescent layer forms the 4th sub-pixel.
2. device according to claim 1, which is characterized in that first luminescent layer be blue light-emitting layer, described second Luminescent layer is Yellow luminous layer, and the third luminescent layer is red light emitting layer, and the 4th luminescent layer is green light emitting layer, described First sub-pixel is white sub-pixels, and second sub-pixel is blue subpixels, and the third sub-pixel is red sub-pixel, 4th sub-pixel is green sub-pixels.
3. device according to claim 1, which is characterized in that the encapsulating structure include be stacked it is first inorganic Layer, the first organic layer, monochromatic filter, the second organic layer and the second inorganic layer;
Wherein, first inorganic layer cover the OLED device ontology, the monochromatic filter and second luminescent layer and The overlapping region of the third luminescent layer is correspondingly arranged.
4. a kind of production method of OLED device, which is characterized in that the production method includes:
One substrate is provided;
OLED device ontology is formed on the substrate, wherein the OLED device ontology includes multiple luminescent layers, multiple to shine A luminescent layer in layer partly overlaps with other two luminescent layer setting respectively;
The encapsulating structure for encapsulating the OLED device ontology is formed on the OLED device ontology, wherein the encapsulating structure It is provided with monochromatic filter, one of the monochromatic filter and overlapping areas are correspondingly arranged;
Wherein, one of overlapping areas forms a sub-pixel, and the other of overlapping areas passes through the monochrome Another sub-pixel is formed after optical filter;
Multiple luminescent layers include the first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer, second luminescent layer Partly overlap setting with first luminescent layer, second luminescent layer not the part Chong Die with first luminescent layer with it is described Third luminescent layer overlaps;
Wherein, the overlapping region of first luminescent layer and second luminescent layer forms the first sub-pixel, and described first shines Described in the overlapping region of the second sub-pixel of underlapped region formation of layer, second luminescent layer and the third luminescent layer is passed through Third sub-pixel is formed after monochromatic filter optical filtering processing, the third luminescent layer forms the 4th sub-pixel.
5. production method according to claim 4, which is characterized in that first luminescent layer is blue light-emitting layer, described Second luminescent layer is Yellow luminous layer, and the third luminescent layer is red light emitting layer, and the 4th luminescent layer is green light emitting layer, First sub-pixel is white sub-pixels, and second sub-pixel is blue subpixels, and the third sub-pixel is red son Pixel, the 4th sub-pixel are green sub-pixels.
6. production method according to claim 4, which is characterized in that form the step of OLED device ontology on the substrate Suddenly include:
Using public metal mask plate formed the hole injection layer of the OLED device ontology, hole-transporting layer, electron transfer layer, Electron injecting layer and cathode;
The first metal mask plate, the second metal mask plate, third metal mask plate and the 4th metal mask plate is utilized respectively to be formed The first luminescent layer, the second luminescent layer, third luminescent layer and the 4th luminescent layer of the OLED device ontology;
Wherein, the opening of first metal mask plate, second metal mask plate is greater than the third metal mask plate, institute State the opening of the 4th metal mask plate.
7. production method according to claim 4, which is characterized in that formed described in encapsulation on the OLED device ontology The step of monochromatic filter of OLED device ontology includes:
The first inorganic layer of deposition covering OLED device ontology on the OLED device ontology;
The first organic layer of deposition covering on first inorganic layer;
Monochromatic filter is formed on first organic layer, wherein the monochromatic filter and second luminescent layer and described The region of third luminescent layer overlapping is correspondingly arranged;
The second organic layer is deposited on the monochromatic filter;
The second inorganic layer is deposited on second organic layer.
8. production method according to claim 7, which is characterized in that described to form monochromatic filter on first organic layer The step of mating plate includes:
Negativity photoresist layer is coated on first organic layer;
The exposure region being developed to corresponding to the third sub-pixel is exposed to the negativity photoresist layer;
Monochromatic filter is deposited in the exposure region;
The remaining negativity photoresist layer is removed to form monochromatic filter on first organic layer.
CN201610910336.0A 2016-10-19 2016-10-19 A kind of OLED device and preparation method thereof Active CN106229334B (en)

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