CN106229263A - A kind of quasiconductor lug manufacturing process titanium tungsten etching bath composition - Google Patents
A kind of quasiconductor lug manufacturing process titanium tungsten etching bath composition Download PDFInfo
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- CN106229263A CN106229263A CN201610618062.8A CN201610618062A CN106229263A CN 106229263 A CN106229263 A CN 106229263A CN 201610618062 A CN201610618062 A CN 201610618062A CN 106229263 A CN106229263 A CN 106229263A
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- Prior art keywords
- quasiconductor
- manufacturing process
- bath composition
- titanium tungsten
- etching bath
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000203 mixture Substances 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 title claims abstract description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000004094 surface-active agent Substances 0.000 claims abstract description 16
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 15
- 239000003381 stabilizer Substances 0.000 claims abstract description 14
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- -1 borate ester Chemical class 0.000 claims abstract description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims abstract description 4
- HJVAFZMYQQSPHF-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;boric acid Chemical compound OB(O)O.OCCN(CCO)CCO HJVAFZMYQQSPHF-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 5
- 239000004359 castor oil Substances 0.000 claims description 5
- 235000019438 castor oil Nutrition 0.000 claims description 5
- 239000002738 chelating agent Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 125000005456 glyceride group Chemical group 0.000 claims description 5
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 5
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 3
- 235000011572 Pyrus ussuriensis Nutrition 0.000 claims description 3
- 244000173166 Pyrus ussuriensis Species 0.000 claims description 3
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 3
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 150000004665 fatty acids Chemical class 0.000 claims description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims description 3
- 150000003009 phosphonic acids Chemical class 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 239000000176 sodium gluconate Substances 0.000 claims description 3
- 229940005574 sodium gluconate Drugs 0.000 claims description 3
- 235000012207 sodium gluconate Nutrition 0.000 claims description 3
- 239000001433 sodium tartrate Substances 0.000 claims description 3
- 229960002167 sodium tartrate Drugs 0.000 claims description 3
- 235000011004 sodium tartrates Nutrition 0.000 claims description 3
- 150000003628 tricarboxylic acids Chemical class 0.000 claims description 3
- QFSNCROGCLRZHC-UHFFFAOYSA-N 2,3-dihydroxypropoxyboronic acid Chemical compound OCC(O)COB(O)O QFSNCROGCLRZHC-UHFFFAOYSA-N 0.000 claims description 2
- SFDBDSPKNLQFMG-UHFFFAOYSA-N B(O)(O)O.N(CCO)(CCO)CCO.OCC(O)CO Chemical compound B(O)(O)O.N(CCO)(CCO)CCO.OCC(O)CO SFDBDSPKNLQFMG-UHFFFAOYSA-N 0.000 claims description 2
- 229940120146 EDTMP Drugs 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- 229950008882 polysorbate Drugs 0.000 claims description 2
- 229920000136 polysorbate Polymers 0.000 claims description 2
- WBHHMMIMDMUBKC-XLNAKTSKSA-N ricinelaidic acid Chemical compound CCCCCC[C@@H](O)C\C=C\CCCCCCCC(O)=O WBHHMMIMDMUBKC-XLNAKTSKSA-N 0.000 claims description 2
- 229960003656 ricinoleic acid Drugs 0.000 claims description 2
- FEUQNCSVHBHROZ-UHFFFAOYSA-N ricinoleic acid Natural products CCCCCCC(O[Si](C)(C)C)CC=CCCCCCCCC(=O)OC FEUQNCSVHBHROZ-UHFFFAOYSA-N 0.000 claims description 2
- 229960001790 sodium citrate Drugs 0.000 claims description 2
- 235000011083 sodium citrates Nutrition 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical class OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- ICLYJLBTOGPLMC-KVVVOXFISA-N (z)-octadec-9-enoate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCC\C=C/CCCCCCCC(O)=O ICLYJLBTOGPLMC-KVVVOXFISA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 241000700143 Castor fiber Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- PEEKVIHQOHJITP-UHFFFAOYSA-N boric acid;propane-1,2,3-triol Chemical compound OB(O)O.OCC(O)CO PEEKVIHQOHJITP-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 210000000582 semen Anatomy 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229940117013 triethanolamine oleate Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention relates to a kind of quasiconductor lug manufacturing process titanium tungsten etching bath composition, component is by mass percentage, hydrogen peroxide 10～30%, copper ion complexing agent 0.05～5%, stabilizer of hydrogen peroxide 0.05～5%, surfactant 0.001～0.1%, builder 0.1～1% and excess water.Described builder is at least one in hydroxycarboxylic acid, borate ester.The titanium tungsten etching bath composition of the present invention, long to titanium layer corrosion uniform and complete, stable performance, service life, after corrosion, residual solution easily rinses noresidue.
Description
Technical field
The present invention relates to a kind of titanium tungsten corrosive liquid, be specifically related to a kind of quasiconductor lug manufacturing process titanium tungsten corrosive liquid, mainly
It is applied in semicon industry be used as corrosion titanium tungsten metal level, belongs to micron Electric Chemical Reagent technical field.
Background technology
Along with reducing further of chip feature sizes, on chip, the pitch of input/output terminal is towards less than 100 microns
Size development (even to 40 microns), this defines huge challenge to flip-chip packaged epirelief block structured manufacture, because convex
In block structured process for making, in order to obtain size of lug structure accurately, photoetching and galavanic growth technique are industries
Standard technology selects, and plated copper bumps structural manufacturing process needs metal seed layer in order to conduct electricity.Because chip surface electrode is usually aluminum
(or Solder for Al-Cu Joint Welding, aluminum-silicon) material, considering from materialogy, in order to avoid the phase counterdiffusion of metallic aluminium with copper, need at aluminum electricity
Surface, pole deposits one layer to be had barrier metal phase counterdiffusion and ensures the metal level of good connection between metal, and this metal level is in the industry
Referred to as barrier layer, material is usually titanium-tungsten, and the method frequently with physical vapour deposition (PVD) shapes.Generally use wet etching
Method removes invalid Titanium or titanium tungsten.Under conditions of copper ion exists, hydrogen peroxide is extremely easy in decomposition, therefore needs to add copper
Ionic complexing agent and stabilizer of hydrogen peroxide.Owing to the gap that titanium layer surface is trickle causes the phenomenon that corrosion is uneven, body occur
Surfactant to be added in system, reduces the surface tension of corrosive liquid, enables corrosive liquid to penetrate into micro gap, improves corruption
Erosion effect.Titanium tungsten etching bath composition can be used for selectivity in the presence of at least one metal in copper, stannum, ashbury metal and aluminum
Corrosion titanium-tungsten.
Additionally, existing corrosive liquid exists rinses sordid defect, chip may be caused into one by the corrosive liquid of residual
Step corrosion, therefore improves further to existing corrosive liquid, and improving its easy washability is also that those skilled in the art need thinking
Technical barrier.
Summary of the invention
The technical problem to be solved is to provide a kind of quasiconductor lug manufacturing process titanium for above-mentioned prior art
Tungsten etching bath composition, stable performance uniform to titanium layer corrosion, easily rinse noresidue.
The present invention solves the technical scheme that the problems referred to above are used: a kind of quasiconductor lug manufacturing process titanium tungsten corrosive liquid group
Compound, it is characterised in that: component is by mass percentage, hydrogen peroxide 10～30%, copper ion complexing agent 0.05～5%, mistake
Hydrogen oxide stabilizer 0.05～5%, surfactant 0.001～0.1%, builder 0.1～1% and excess water.
Preferably, component is by mass percentage, hydrogen peroxide 20～30%, copper ion complexing agent 1～5%, peroxidating
Stabilized hydrogen agent 1～5%, surfactant 0.001～0.1%, builder 0.1～1% and excess water.
At least one in tetrahydroxypropyl ethylenediamine, ethylenediaminetetraacetic acid of described copper ion complexing agent.
Described stabilizer of hydrogen peroxide is selected from 1-hydroxy ethylidene-1,1-diphosphonic acid (HEDP), ATMP (ATMP), second two
Amine four methylenephosphonic acid (sodium) (EDTMO(S)), phosphonic acids butylamine-1,2,4 tricarboxylic acids (PBTC), diethylene triamine pentamethylene phosphonic
(DTPMP), 2-HPAA (HPAA)) at least one.
Described surfactant is nonionic surfactant, the smooth and poly-Pyrusussuriensis of fatty glyceride, fatty acid Pyrusussuriensis
At least one in ester, for reducing the surface tension of corrosive liquid, makes corrosive liquid penetrate into the gap of titanium layer, improves corrosion and clean
Effect.
Described builder is at least one in hydroxycarboxylic acid, borate ester.
Preferably, at least one in sodium gluconate, sodium citrate, sodium tartrate of described hydroxycarboxylic acid.Hydroxyl
Yl carboxylic acid class builder can not only make corrosive liquid after corrosion chip, is easily cleaned by removing.Can be used as chelating agen, chelating
Metal ion, it is to avoid catalytic decomposition hydrogen peroxide, extends the service life of corrosive liquid.
Preferably, described borate ester is selected from castor oil acid triethanolamine borate, ricinoleic acid borate and sweet
Oil triethanolamine borate, two glyceryl borates and triethanolamine borate, first-selected castor oil acid triethanolamine borate, Semen Ricini
Oleic borate.Oleum Ricini acids borate has bigger molecular volume, and its molecular surface area is less thus can make
Machine thing surface tension increases, and is favorably improved the easy washability of corrosive liquid, noresidue.
Compared with prior art, it is an advantage of the current invention that: provide a kind of quasiconductor lug manufacturing process titanium tungsten corrosive liquid
Compositions, long to titanium layer corrosion uniform and complete, stable performance, service life, after corrosion, residual solution easily rinses noresidue.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail.
Embodiment 1
Quasiconductor lug manufacturing process titanium tungsten etching bath composition, component is by mass percentage, hydrogen peroxide 10%, copper ion
Chelating agent 5%, stabilizer of hydrogen peroxide 3%, surfactant 0.1%, builder 0.1% and excess water.Copper ion complexing agent is four
Hydroxypropylethylendiamine diamine.Stabilizer of hydrogen peroxide is 1-hydroxy ethylidene-1,1-diphosphonic acid (HEDP).Surfactant is fatty glyceride.Help
Lotion is sodium citrate+castor oil acid triethanolamine borate.
Embodiment 2
Quasiconductor lug manufacturing process titanium tungsten etching bath composition, component is by mass percentage, hydrogen peroxide 30%, copper ion
Chelating agent 4%, stabilizer of hydrogen peroxide 5%, surfactant 0.08%, builder 0.08% and excess water.Copper ion complexing agent is
Ethylenediaminetetraacetic acid.Stabilizer of hydrogen peroxide is phosphonic acids butylamine-1,2,4 tricarboxylic acids (PBTC), diethylene triamine pentamethylene phosphonic
(DTPMP).Surfactant is the mixture that fatty glyceride is smooth with fatty acid Pyrusussuriensis.Builder is sodium gluconate and castor
Fiber crops triethanolamine oleate borate mixes according to the mass ratio of 1:1.5.
Embodiment 3
Quasiconductor lug manufacturing process titanium tungsten etching bath composition, component is by mass percentage, hydrogen peroxide 20%, copper ion
Chelating agent 5%, stabilizer of hydrogen peroxide 2.5%, surfactant 0.05%, builder 0.05% and excess water.Copper ion complexing agent
For ethylenediaminetetraacetic acid.Stabilizer of hydrogen peroxide is ATMP (ATMP), ethylene diamine tetra methylene phosphonic acid (sodium)
(EDTMO(S)).Surfactant is Polysorbate.Builder is that sodium tartrate and glycerol triethanolamine borate are according to 1:1's
Mass ratio mixes.
Embodiment 4
Quasiconductor lug manufacturing process titanium tungsten etching bath composition, component is by mass percentage, hydrogen peroxide 35%, copper ion
Chelating agent 5%, stabilizer of hydrogen peroxide 4.5%, surfactant 0.1%, builder 0.05% and excess water.Copper ion complexing agent
For tetrahydroxypropyl ethylenediamine, the mixture of both ethylenediaminetetraacetic acid arbitrary proportion.Stabilizer of hydrogen peroxide is amino three methene
Phosphonic acids (ATMP), 2-HPAA (HPAA)).Surfactant is fatty glyceride.Builder is castor oil acid
Glyceryl borate.
In addition to the implementation, present invention additionally comprises other embodiments, all employing equivalents or equivalence to replace
The technical scheme that mode is formed, all should fall within the scope of the hereto appended claims.
Claims (9)
1. a quasiconductor lug manufacturing process titanium tungsten etching bath composition, it is characterised in that: component is by mass percentage, mistake
Hydrogen oxide 10～30%, copper ion complexing agent 0.05～5%, stabilizer of hydrogen peroxide 0.05～5%, surfactant 0.001～
0.1%, builder 0.1～1% and excess water.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 1, it is characterised in that: component presses matter
Amount percentages is, hydrogen peroxide 20～30%, copper ion complexing agent 1～5%, stabilizer of hydrogen peroxide 1～5%, surfactant
0.001～0.1%, builder 0.1～1% and excess water.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 1, it is characterised in that: described copper from
At least one in tetrahydroxypropyl ethylenediamine, ethylenediaminetetraacetic acid of sub-chelating agent.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 1, it is characterised in that: described peroxide
Change stabilized hydrogen agent and be selected from 1-hydroxy ethylidene-1,1-diphosphonic acid, ATMP, ethylene diamine tetra methylene phosphonic acid (sodium), phosphonic acids butylamine-1,
At least one in 2,4 tricarboxylic acids, diethylene triamine pentamethylene phosphonic, 2-HPAA.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 1, it is characterised in that: described surface
Activating agent is nonionic surfactant.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 5, it is characterised in that: described non-from
Subtype surfactant can be that fatty glyceride, fatty acid Pyrusussuriensis be smooth and at least one in Polysorbate.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 1, it is characterised in that help described in: and wash
Agent is at least one in hydroxycarboxylic acid, borate ester.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 7, it is characterised in that: described hydroxyl
At least one in sodium gluconate, sodium citrate, sodium tartrate of carboxylic acids.
Quasiconductor lug manufacturing process titanium tungsten etching bath composition the most according to claim 7, it is characterised in that: described boric acid
Esters is selected from castor oil acid triethanolamine borate, ricinoleic acid borate and glycerol triethanolamine borate, two glycerol
Borate and triethanolamine borate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618062.8A CN106229263A (en) | 2016-08-01 | 2016-08-01 | A kind of quasiconductor lug manufacturing process titanium tungsten etching bath composition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618062.8A CN106229263A (en) | 2016-08-01 | 2016-08-01 | A kind of quasiconductor lug manufacturing process titanium tungsten etching bath composition |
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| Publication Number | Publication Date |
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| CN106229263A true CN106229263A (en) | 2016-12-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106629581A (en) * | 2016-12-23 | 2017-05-10 | 江苏鲁汶仪器有限公司 | Method for forming device structure by corrosion through all-wet process |
| CN112981405A (en) * | 2021-02-23 | 2021-06-18 | 江苏艾森半导体材料股份有限公司 | Titanium-tungsten etching solution and preparation method and application thereof |
| CN113913823A (en) * | 2021-09-14 | 2022-01-11 | 赛创电气（铜陵）有限公司 | Film-removing etching method for semiconductor refrigerator |
| CN114425534A (en) * | 2021-12-13 | 2022-05-03 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
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| CN106629581A (en) * | 2016-12-23 | 2017-05-10 | 江苏鲁汶仪器有限公司 | Method for forming device structure by corrosion through all-wet process |
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| CN113913823A (en) * | 2021-09-14 | 2022-01-11 | 赛创电气（铜陵）有限公司 | Film-removing etching method for semiconductor refrigerator |
| CN114425534A (en) * | 2021-12-13 | 2022-05-03 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
| CN114425534B (en) * | 2021-12-13 | 2024-04-16 | 金华博蓝特新材料有限公司 | Method for cleaning sapphire substrate after copper polishing |
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| WO2024184264A1 (en) * | 2023-03-03 | 2024-09-12 | Technic France | Chemical etching solution and method for selectively etching titanium |
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