CN106229156A - A kind of preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage - Google Patents
A kind of preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage Download PDFInfo
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- CN106229156A CN106229156A CN201610749411.XA CN201610749411A CN106229156A CN 106229156 A CN106229156 A CN 106229156A CN 201610749411 A CN201610749411 A CN 201610749411A CN 106229156 A CN106229156 A CN 106229156A
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- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 16
- 238000004146 energy storage Methods 0.000 title claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 238000000498 ball milling Methods 0.000 claims abstract description 12
- 239000011812 mixed powder Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000002791 soaking Methods 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000004202 carbamide Substances 0.000 claims description 6
- 235000013877 carbamide Nutrition 0.000 claims description 6
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 6
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 5
- 239000008103 glucose Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 7
- 239000004115 Sodium Silicate Substances 0.000 description 5
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 5
- 229910052911 sodium silicate Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 239000003317 industrial substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silane imine Chemical class 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Silicon Compounds (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The preparation method of a kind of two-dimentional silicon-carbon nitrogen nano-material for energy storage, comprises the steps: that silicon source, carbon source and nitrogen source are configured to mixed-powder by (1)；(2) by mixed-powder electron tubes type reaction in furnace；(3) product is put into ball mill ball milling；(4) after the product aqueous slkali soaking after ball milling, it is washed to neutrality again, obtains two dimension silicon-carbon nitrogen nanometer sheet.The method using silicon source, carbon source, nitrogen source ternary thing be as raw material; cheap and easy to get; reaction condition facilitates controlled; the equipment needed is fairly simple; in product, each component ratio is controlled, and the various parameters in course of reaction are prone to be monitored and controlled, it is easy to accomplish low cost is produced in enormous quantities; pollution, beneficially environmental conservation can be inherently eliminated.
Description
Technical field
The present invention relates to one utilizes ternary thing (silicon source, carbon source, nitrogen source) to can be used for energy as raw material high-temperature calcination preparation
The method of the two-dimentional silicon-carbon nitrogen nanometer sheet of amount storage art, belongs to two dimension silicon-carbon nitrogen nano-material preparing technical field.
Background technology
Along with the rise of Graphene research, two-dimensional material is increasingly subject to people's attention with its distinctive character.At this
In a little two-dimensional material, the carbon nitrogen (graphitic carbon nitride) that nonmetalloid is constituted, the heat excellent due to it is steady
Qualitative, chemical stability, unique optical characteristics, electrology characteristic and environment friendly are increasingly paid close attention to by people.Such as, carbon
Nitrogen, as a kind of novel visible ray semiconductor catalyst, has been successfully applied to catalysis and field of energy conversion (Shaowen
Cao, et al, Polymeric Photocatalysts Based on Graphitic Carbon Nitride,
Adv.Mater.2015,27,2150–2176).But, carbon nitrogen also exists the shortcoming that electronics conduction efficiency is low, which has limited
This nonmetal two-dimensional material of carbon nitrogen is in the application of the aspects such as lithium electricity and super electric homenergic storage.Therefore study and how to obtain high energy
The two-dimentional nonmetallic materials of amount storage are study hotspots of Material Field.
Meanwhile, research worker finds that many siliceous materials all have good electronic conductivity energy, particularly silicon
Carbon nitrogen (SiCN) material has the biggest application prospect due to its good electric property and stability in energy storage field.Just
Broad prospect of application based on silicon-carbon nitrogen, scientists has carried out extensive research to the synthesis of silicon-carbon nitrogen, and has obtained
Fruitful progress.
So far, the most frequently used preparation method is the silicon using silane imine polymer calcining to prepare three dimensional structure (3D)
Carbon-nitrogen material.Compared to three dimensional structure, two-dimensional material has more because of its bigger specific surface area and efficient electron transmission performance
Good using value, but not yet it is related to the preparation method of two dimension silicon-carbon nitrogen nanometer sheet at present.
Therefore, develop a kind of simple to operate, can low cost, high yield obtain the two-dimentional silicon-carbon nitrogen that specific surface area is bigger
Nanometer sheet is significant.
Summary of the invention
The present invention is directed to existing silicon-carbon nitrogen material technology of preparing exist not in terms of preparation two dimension silicon-carbon nitrogen nano-material
Foot, it is provided that the preparation method of a kind of two-dimentional silicon-carbon nitrogen nano-material for energy storage, to realize two dimension silicon-carbon nitrogen nanometer
The low cost of sheet is prepared on a large scale.
The preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage of the present invention, comprises the steps:
(1) silicon source, carbon source and nitrogen source are configured to mixed-powder；
(2) mixed-powder is placed in vacuum tube furnace, reacts 1～24 hour at 600 DEG C～1200 DEG C；
(3) product is put into ball mill ball milling 2～8 hours；
(4) by the product after ball milling with after aqueous slkali soaking 1～24 hours, then it is washed to washing liquid in neutral (pH value is 7),
Obtain two dimension silicon-carbon nitrogen nanometer sheet.
Silicon source in step (1) is elemental silicon, silicon dioxide, silicic acid, silicate or siliceous Organic substance.
Nitrogen source in step (1) is lithium nitride, Hydrazoic acid,sodium salt, carbamide, dicyandiamide or tripolycyanamide.
Carbon source in step (1) is graphite, glucose or citric acid.
In step (1), nitrogen source is 1:5-5:1 with the mol ratio of carbon source, and silicon source molal quantity is carbon source and nitrogen source molal quantity sum
0.1%-10%.
The mixed-powder of step (1) be silicon source, carbon source are dissolved in the water together with nitrogen source postlyophilization process obtain,
Or ground and mixed uniformly obtains.
In step (2), vacuum tube furnace reaches reaction temperature with the heating rate of 1 DEG C/min～10 DEG C/min.
Reaction in step (2) is synthesis under normal pressure under nitrogen or argon, or is-0.1MPa at relative pressure
～react under the vacuum condition of-0.001Mpa.
Aqueous slkali in step (4) is concentration 1mol/L～the sodium hydroxide solution of 10mol/L or potassium hydroxide solution.
Using ternary thing (silicon source, carbon source, nitrogen source), as raw material, cheaper starting materials is easy to get the method for the present invention, reaction condition side
The most controlled, the equipment of needs is fairly simple, and in product, each component ratio is controlled, it is easy to accomplish low cost is produced in enormous quantities.
Present invention have the advantage that
1. low cost.Raw materials used being conventional chemical reagent or industrial chemicals, operation sequence is simple, is conducive to improving product
Rate, reduces cost.
2, the various parameters in course of reaction (temperature, pressure, ratio etc.) are prone to be monitored and controlled, it is possible to be easier to research
Reaction mechanism, finds out the influence factor of most critical, as early as possible process for stabilizing condition.
3, low in the pollution of the environment, pollution, beneficially environmental conservation can be inherently eliminated.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscopic picture of two-dimentional silicon-carbon nitrogen nanometer sheet prepared by the present invention.
Fig. 2 is the XRD figure sheet of two-dimentional silicon-carbon nitrogen nanometer sheet prepared by the present invention.
Fig. 3 is the EDS picture of two-dimentional silicon-carbon nitrogen nanometer sheet prepared by the present invention.
Fig. 4 is that the two-dimentional silicon-carbon nitrogen nanometer sheet prepared of the present invention is at ultracapacitor field cyclic voltammetry figure.
Detailed description of the invention
Embodiment 1
(1) sodium silicate 1g, glucose 4.5g, carbamide 4.5g are weighed.Wherein nitrogen source is 3:1 with the mol ratio of carbon source, silicon source
Molal quantity is carbon source and the 3.5% of nitrogen source molal quantity sum.Then three kinds of materials are placed in 100mL beaker, add 80mL water
Middle stirring and dissolving.Solution lyophilization is processed, obtains mixed-powder.
(2) mixed-powder is put in ceramic boat, be placed in tube furnace.Under nitrogen atmosphere is protected, with 8 DEG C/min
Ramp is to 1000 DEG C, and insulation reaction 8 hours.
(3) calcining gained product is put into ball mill ball milling 2 hours.
(4) sodium hydroxide solution of product concentration 5mol/L obtained by ball milling soaks 16 hours, then uses deionized water
It is washed till neutrality, i.e. obtains silicon doping carbon nitrogen.
The scanning electron microscopic picture of two-dimentional silicon-carbon nitrogen nanometer sheet prepared by the present embodiment is as it is shown in figure 1, XRD figure sheet such as Fig. 2 institute
Showing, EDS picture is as it is shown on figure 3, in ultracapacitor field cyclic voltammetry result as shown in Figure 4.
Embodiment 2
As described in Example 1, difference is: substitute sodium silicate with butadienyl triethoxysilane in step (1)
As silicon source.
Embodiment 3
As described in Example 1, difference is: substitute sodium silicate as silicon source using silicic acid in step (1).
Embodiment 4
As described in Example 1, difference is: substitute carbamide as nitrogen source using lithium nitride in step (1).
Embodiment 5
As described in Example 1, difference is: sodium silicate 3.1g, glucose 18g, carbamide 1.2g in step (1).Its
Middle nitrogen source is 1:5 with the mol ratio of carbon source, and silicon source molal quantity is carbon source and the 9% of nitrogen source molal quantity sum.
Embodiment 6
As described in Example 1, difference is: sodium silicate 0.17g, glucose 18g, carbamide 30g in step (1).Its
Middle nitrogen source is 5:1 with the mol ratio of carbon source, and silicon source molal quantity is carbon source and the 0.1% of nitrogen source molal quantity sum.
Embodiment 7
As described in Example 1, difference is: with the ramp of 1 DEG C/min to 600 DEG C in step (2), and protect
Temperature reaction 24 hours.
Embodiment 8
As described in Example 1, difference is: with the ramp of 10 DEG C/min to 1200 DEG C in step (2), and
Insulation reaction 1 hour.
Embodiment 9
As described in Example 1, difference is: be to be the vacuum environment of-0.1Mpa at relative vacuum degree in step (2)
Lower reaction.
Embodiment 10
As described in Example 1, difference is: be to protect synthesis under normal pressure in argon gas atmosphere in step (2).
Embodiment 11
As described in Example 1, difference is: in step (3), Ball-milling Time is set to 6 hours.
Embodiment 12
As described in Example 1, difference is: in step (3), Ball-milling Time is set to 8 hours.
Embodiment 13
As described in Example 1, difference is: be to soak in the sodium hydroxide solution of concentration 1mol/L in step (4)
Steep 24 hours.
Embodiment 14
As described in Example 1, difference is: be to soak in the sodium hydroxide solution of concentration 10mol/L in step (4)
Steep 1 hour.
Embodiment 15
As described in Example 1, difference is: be in step (4) in the potassium hydroxide solution that concentration is 8mol/L
Soak 8 hours.
Embodiment 16
(1) silicon dioxide 0.32g, citric acid 8.1g, dicyandiamide 1.2g are weighed.Wherein nitrogen source is 1 with the mol ratio of carbon source:
3, silicon source molal quantity is carbon source and the 10% of nitrogen source molal quantity sum.By uniform for three kinds of material ground and mixed.
(2) powder obtained is put in ceramic boat, be placed in tube furnace.Relative vacuum degree is the vacuum ring of-0.05Mpa
Under border, it is warming up to 800 DEG C with 6 DEG C/min, and insulation reaction 16 hours.
(3) calcining gained product is put into ball mill ball milling 4 hours.
(4) sodium hydroxide solution of the product 3mol/L obtained by ball milling soaks 20 hours, then be washed with deionized water to
Neutrality, i.e. can get silicon doping carbon nitrogen.
Embodiment 17
As described in Example 16, difference is: replace silicon dioxide as silicon source using elemental silicon in step (1).
Embodiment 18
As described in Example 16, difference is: substitute citric acid as carbon source using Graphene in step (1).
Embodiment 19
As described in Example 16, difference is: substitute dicyandiamide as nitrogen source using Hydrazoic acid,sodium salt in step (1).
Embodiment 20
As described in Example 16, difference is: substitute dicyandiamide as nitrogen source using tripolycyanamide in step (1).
Embodiment 21
As described in Example 16, difference is: silicon dioxide 0.1g in step (1), citric acid 1.8g, dicyandiamide
3.3g.Wherein, nitrogen source is 4:1 with the mol ratio of carbon source, and silicon source molal quantity is carbon source and the 3.2% of nitrogen source molal quantity sum.
Embodiment 22
As described in Example 16, difference is: be to be the vacuum of-0.001Mpa at relative vacuum degree in step (2)
Under environment, it is warming up to 700 DEG C with 4 DEG C/min, and insulation reaction 20 hours.
Claims (9)
1. a preparation method for the two-dimentional silicon-carbon nitrogen nano-material stored for energy, is characterized in that, comprise the steps:
(1) silicon source, carbon source and nitrogen source are configured to mixed-powder；
(2) mixed-powder is placed in vacuum tube furnace, reacts 1～24 hour at 600 DEG C～1200 DEG C；
(3) product is put into ball mill ball milling 2～8 hours；
(4) by the product after ball milling with after aqueous slkali soaking 1～24 hours, then to be washed to washing liquid be neutrality, obtains two dimension silicon-carbon
Nitrogen nanometer sheet.
2. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
The silicon source in step (1) of stating is elemental silicon, silicon dioxide, silicic acid, silicate or siliceous Organic substance.
3. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
The nitrogen source in step (1) of stating is lithium nitride, Hydrazoic acid,sodium salt, carbamide, dicyandiamide or tripolycyanamide.
4. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
Stating the carbon source in step (1) is graphite, glucose or citric acid.
5. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
Stating the mol ratio of nitrogen source and carbon source in step (1) is 1:5-5:1, and silicon source molal quantity is carbon source and nitrogen source molal quantity sum
0.1%-10%.
6. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
Stating the mixed-powder of step (1) is that the postlyophilization that silicon source, carbon source is dissolved in the water together with nitrogen source processes and obtains, or grinds
Mill mix homogeneously obtains.
7. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
State vacuum tube furnace in step (2) and reach reaction temperature with the heating rate of 1 DEG C/min～10 DEG C/min.
8. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
Stating the reaction in step (2) is synthesis under normal pressure under nitrogen or argon, or relative pressure be-0.1MPa～-
React under the vacuum condition of 0.001Mpa.
9. the preparation method of the two-dimentional silicon-carbon nitrogen nano-material for energy storage as claimed in claim 1, is characterized in that, institute
Stating the aqueous slkali in step (4) is concentration 1mol/L～the sodium hydroxide solution of 10mol/L or potassium hydroxide solution.
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| CN107400852A (en) * | 2017-07-31 | 2017-11-28 | 广东海洋大学 | A kind of silicon-carbon nitroblue light luminescent film and preparation method thereof |
| CN110544590A (en) * | 2018-05-29 | 2019-12-06 | 中国海洋大学 | Nitrate-assisted synthesized nitrogen-doped nano carbon sheet and sodium storage application thereof |
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| CN107068996A (en) * | 2017-02-27 | 2017-08-18 | 陕西六元碳晶股份有限公司 | A kind of continuous preparation method of silicon-carbon nitrogen composite |
| CN107068996B (en) * | 2017-02-27 | 2019-10-25 | 陕西六元碳晶股份有限公司 | A kind of continuous preparation method of silicon-carbon nitrogen composite material |
| CN107400852A (en) * | 2017-07-31 | 2017-11-28 | 广东海洋大学 | A kind of silicon-carbon nitroblue light luminescent film and preparation method thereof |
| CN110544590A (en) * | 2018-05-29 | 2019-12-06 | 中国海洋大学 | Nitrate-assisted synthesized nitrogen-doped nano carbon sheet and sodium storage application thereof |
| CN110544590B (en) * | 2018-05-29 | 2021-05-04 | 中国海洋大学 | Nitrate-assisted synthesized nitrogen-doped nano carbon sheet and sodium storage application thereof |
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| CN106229156B (en) | 2018-08-03 |
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