CN106226134A - The method preparing example of transmission electron microscope - Google Patents
The method preparing example of transmission electron microscope Download PDFInfo
- Publication number
- CN106226134A CN106226134A CN201610612977.8A CN201610612977A CN106226134A CN 106226134 A CN106226134 A CN 106226134A CN 201610612977 A CN201610612977 A CN 201610612977A CN 106226134 A CN106226134 A CN 106226134A
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- CN
- China
- Prior art keywords
- electron microscope
- transmission electron
- chip sample
- method preparing
- preparing example
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention provides a kind of method preparing example of transmission electron microscope, including: first step: utilize focused ion bundle to process, the chip sample needing preparation to obtain transmission electron microscope chip sample；Second step: use reacting gas that transmission electron microscope chip sample is processed；Third step: utilize transmission electron microscope that the example of transmission electron microscope thin slice after processing is observed.
Description
Technical field
The present invention relates to Integrated circuit analysis field, it is more particularly related to one prepares transmission electron microscopy
The method of mirror sample.
Background technology
Transmission electron microscope (TEM) suffers from extremely wide in the every field including Integrated circuit analysis and gets over
Carrying out the most important application, focused ion bundle (FIB) sample preparation is then the transmission electron microscope sample that semiconductor applications is main
Product preparation means.
Conventional focused ion bundle method for making sample is chip sample 10 (top view and the Fig. 2 such as Fig. 1 by needing preparation
Sectional view shown in) put into focused ion bundle after (as shown in the dotted arrow of Fig. 4), utilize ion beam carry out cutting and thinning,
It is prepared as thickness about at the example of transmission electron microscope thin slice 20 of 100 ran, is then placed in transmission electron microscope and sets
For being analyzed (as shown in the top view of Fig. 3 and the sectional view of Fig. 4).
But the example of transmission electron microscope that this method is prepared, due to some material (such as silicon, silicon oxide, nitridation
Silicon etc.) there is the features such as characteristic is closer to, cause and be not easily distinguishable.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one can be by thoroughly
Penetrate the method that materials different on electron microscope sample is distinguished more clearly to prepare example of transmission electron microscope.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of side preparing example of transmission electron microscope
Method, including:
First step: utilize focused ion bundle that the chip sample needing preparation is processed, aobvious to obtain transmitted electron
Micro mirror chip sample；
Second step: use reacting gas that transmission electron microscope chip sample is processed；
Third step: utilize transmission electron microscope that the example of transmission electron microscope thin slice after processing is observed.
Preferably, in the first step, inject focused ion bundle to the chip sample needing preparation, utilize ion beam to needing
Chip sample to be prepared carries out cutting with thinning.
Preferably, at second step so that reacting gas with angle of inclination to transmission electron microscope chip sample 20, with
The sidewall making transmission electron microscope chip sample 20 reacts with reacting gas.
Preferably, the thickness of example of transmission electron microscope thin slice is between 50 nanometers to 150 nanometers.
Preferably, the thickness of example of transmission electron microscope thin slice is between 80 nanometers to 120 nanometers.
Preferably, the thickness of example of transmission electron microscope thin slice is 100 nanometers.
Preferably, use the reacting gas of gas injection system of focused ion Shu Peibei to transmitted electron at second step
Microscope chip sample processes.
Preferably, the reacting gas in second step processed transmission electron microscope chip sample is XeF2Gas
Body.
Preferably, the process time in second step processed transmission electron microscope chip sample is 3～5 seconds.
In the method preparing example of transmission electron microscope according to the present invention, by using reacting gas to transmission electricity
Some material on sub-microscope chip sample carries out slight corrosion or modification so that it is have when tem study
Have with its near material there is bigger difference, thus obtain more preferable transmission electron microscope resolving effect.According to the present invention
The method preparing example of transmission electron microscope can materials different on example of transmission electron microscope be distinguished more
Clear.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows the top view of the chip sample needing preparation.
Fig. 2 schematically shows the sectional view of the chip sample needing preparation
Fig. 3 schematically shows the top view of transmission electron microscope chip sample.
Fig. 4 schematically shows the sectional view of transmission electron microscope chip sample.
Fig. 5 schematically shows the method preparing example of transmission electron microscope according to the preferred embodiment of the invention
Schematic diagram.
Fig. 6 shows the transmission electron microscope photo that traditional method obtains.
Fig. 7 shows and prepares the transmission that the method for example of transmission electron microscope obtains according to the preferred embodiment of the invention
Electron micrograph.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
The method preparing example of transmission electron microscope according to the preferred embodiment of the invention includes:
First step: utilize focused ion bundle to process, the chip sample 10 needing preparation to obtain transmitted electron
Microscope chip sample；
Specifically, in the first step, to chip sample 10 (top view and the cross section of Fig. 2 such as Fig. 1 needing preparation
Shown in figure) inject focused ion bundle (as shown in the dotted arrow of Fig. 4), utilize ion beam that the chip sample 10 needing preparation is entered
Row cutting is with thinning.
The thickness of example of transmission electron microscope thin slice is at 100 ran.For instance, it is preferred that transmission electron microscope
The thickness of sample sheet is between 50 nanometers to 150 nanometers.It is further preferred that the thickness of example of transmission electron microscope thin slice
Between 80 nanometers to 120 nanometers.It is highly preferred that the thickness of example of transmission electron microscope thin slice is 100 nanometers.
Second step: use reacting gas that transmission electron microscope chip sample 20 processes (the dotted line arrow such as Fig. 5
Shown in head).
Preferably, as shown in the dotted arrow of Fig. 5, at second step so that (each side is successively with angle of inclination for reacting gas
Oblique incidence) to transmission electron microscope chip sample 20, so that the sidewall of transmission electron microscope chip sample 20 is with anti-
Answer gas reaction.
Optionally, use the reacting gas of GIS (gas injection system) of focused ion Shu Peibei to thoroughly at second step
Penetrate ultramicroscope chip sample 20 to process.
Such as, the reacting gas in second step processed transmission electron microscope chip sample 20 is XeF2Gas
Body.And such as, the process time in second step processed transmission electron microscope chip sample 20 is 3～5 seconds.
Third step: utilize transmission electron microscope that the example of transmission electron microscope thin slice after processing is observed.
Traditional method is used certain flash chip sample to be carried out transmission electron microscope sample preparation analysis, due to transmitted electron
Microscope example is extremely thin, it is impossible to differentiates and the most whether is overlapping into shallow trench isolation, and silicide
(Silicide) pattern is not the clearest (as shown in Figure 6).
Use method described in the invention, on the transmission electron microscope chip sample after conventional sample preparation completes, logical
Generalized information system on over-focusing ion beam is passed through XeF2Gas, to sample treatment 3～after 5 seconds, gas can be carried out gently with Si together
Micro-reaction, then chip sample is put into transmission electron microscope be observed, it is thus achieved that transmission electron microscope image can be very
Clearly see the upper overlapping a small amount of shallow trench that has of active area (Si) and isolate (SiO2), and the shape of contact area bottom silicon compound
Looks the clearest (as shown in Figure 7).
In the method preparing example of transmission electron microscope according to the preferred embodiment of the invention, by using reaction gas
Body carries out slight corrosion or modification to some material on transmission electron microscope chip sample so that it is at transmission electron microscopy
Mirror have when analyzing with its near material there is bigger difference, thus obtain more preferable transmission electron microscope resolving effect.
The method preparing example of transmission electron microscope according to the preferred embodiment of the invention can be by example of transmission electron microscope
Different materials is distinguished clearer.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
Claims (9)
1. the method preparing example of transmission electron microscope, it is characterised in that including:
First step: utilize focused ion bundle to process, the chip sample needing preparation to obtain transmission electron microscope
Chip sample；
Second step: use reacting gas that transmission electron microscope chip sample is processed；
Third step: utilize transmission electron microscope that the example of transmission electron microscope thin slice after processing is observed.
The method preparing example of transmission electron microscope the most according to claim 1, it is characterised in that at first step
In, inject focused ion bundle to the chip sample needing preparation, utilize ion beam that the chip sample needing preparation is cut
With thinning.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that transmitted electron
The thickness of microscope example thin slice is between 50 nanometers to 150 nanometers.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that transmitted electron
The thickness of microscope example thin slice is between 80 nanometers to 120 nanometers.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that transmitted electron
The thickness of microscope example thin slice is 100 nanometers.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that at second step
Suddenly so that reacting gas with angle of inclination to transmission electron microscope chip sample 20 so that transmission electron microscope thin slice
The sidewall of sample 20 reacts with reacting gas.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that at second step
Transmission electron microscope chip sample is processed by the reacting gas of the rapid gas injection system using focused ion Shu Peibei.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that second step
In reacting gas that transmission electron microscope chip sample is processed be XeF2Gas.
The method preparing example of transmission electron microscope the most according to claim 1 and 2, it is characterised in that second step
In process time that transmission electron microscope chip sample is processed be 3～5 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610612977.8A CN106226134A (en) | 2016-07-29 | 2016-07-29 | The method preparing example of transmission electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610612977.8A CN106226134A (en) | 2016-07-29 | 2016-07-29 | The method preparing example of transmission electron microscope |
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| Publication Number | Publication Date |
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| CN106226134A true CN106226134A (en) | 2016-12-14 |
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| CN201610612977.8A Pending CN106226134A (en) | 2016-07-29 | 2016-07-29 | The method preparing example of transmission electron microscope |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782690A (en) * | 2004-07-14 | 2006-06-07 | 应用材料以色列公司 | Method and apparatus for sample formation and microanalysis in a vacuum chamber |
| CN102052906A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of observation sample of device insulated isolation region for transmission electron microscope |
| US20130209701A1 (en) * | 2012-02-10 | 2013-08-15 | Hitachi High-Tech Science Corporation | Method of preparing sample for tem observation |
| US20130213945A1 (en) * | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Methods and Apparatus for the Preparation of Microscopy Samples by Using Pulsed Light |
| CN103645073A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | Method for preparing TEM sample |
| JP2014082028A (en) * | 2012-10-15 | 2014-05-08 | Hitachi High-Technologies Corp | Charged particle beam device and specimen preparation method |
| CN103797351A (en) * | 2011-09-12 | 2014-05-14 | Fei公司 | Glancing angle mill |
-
2016
- 2016-07-29 CN CN201610612977.8A patent/CN106226134A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782690A (en) * | 2004-07-14 | 2006-06-07 | 应用材料以色列公司 | Method and apparatus for sample formation and microanalysis in a vacuum chamber |
| CN102052906A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of observation sample of device insulated isolation region for transmission electron microscope |
| CN103797351A (en) * | 2011-09-12 | 2014-05-14 | Fei公司 | Glancing angle mill |
| US20130209701A1 (en) * | 2012-02-10 | 2013-08-15 | Hitachi High-Tech Science Corporation | Method of preparing sample for tem observation |
| US20130213945A1 (en) * | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Methods and Apparatus for the Preparation of Microscopy Samples by Using Pulsed Light |
| JP2014082028A (en) * | 2012-10-15 | 2014-05-08 | Hitachi High-Technologies Corp | Charged particle beam device and specimen preparation method |
| CN103645073A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | Method for preparing TEM sample |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Application publication date: 20161214 |