CN106220158A - A kind of High-Power Microwave Ferrite Material and preparation method thereof - Google Patents
A kind of High-Power Microwave Ferrite Material and preparation method thereof Download PDFInfo
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- CN106220158A CN106220158A CN201610628973.9A CN201610628973A CN106220158A CN 106220158 A CN106220158 A CN 106220158A CN 201610628973 A CN201610628973 A CN 201610628973A CN 106220158 A CN106220158 A CN 106220158A
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- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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Abstract
A kind of High-Power Microwave Ferrite Material and preparation method thereof, relates to Ferrite Material technical field.The microwave ferrite material that the present invention provides comprises multiple crystal grain that principal phase is garnet structure；There is between the plurality of crystal grain the sealing coat containing silicon (Si) element.The present invention is by introducing the sealing coat containing silicon (Si) element between multiple crystal grain of microwave ferrite material, prevent the growth of crystal grain in sintering process, reduce crystallite dimension, it is achieved that add the effect of self-rotating wave linewidth, improve the highest suitable power of material；Add the effect of self-rotating wave linewidth simultaneously, further increase the highest suitable power of material；The present invention uses the chemical formula of described garnet structure to be (YxGd1 x) 3FeyO12, and x is positive number and no more than 1 in described chemical formula, y is positive number and the feature of no more than 5, achieve on the basis of increasing self-rotating wave linewidth, obtain adjustable saturation magnetization, improve the convenience of materials application.
Description
Technical field
The present invention relates to a kind of Ferrite Material field, particularly a kind of High-Power Microwave Ferrite Material and preparation side thereof
Method.
Background technology
Microwave ferrite material is widely used in the microwave devices such as microwave circulators, microwave isolator, microwave phase shifter
Manufacture and design.At present, along with the development of correlation technique, people are more and more higher to the requirement of microwave device suitable power, Jin Eryan
Send out and be applicable to the microwave ferrite material of high power conditions and become one of important technical problem in this area.
Owing under high power conditions, microwave ferrite will occur the nonlinear effects such as spin wave excitation to damage in low place
Consumption, so such as conventional Ferrite Materials such as pure yttrium iron garnets, it tends to be difficult to it is applicable to high-power microwave device.Existing skill
In art, in microwave ferrite, generally it is doped into fast relaxation ion, thus increases the self-rotating wave linewidth of microwave ferrite material, subtract
Nonlinear effect loss under little high power, and then improve the highest suitable power of Ferrite Material.
But, other performances of microwave ferrite will be brought bigger shadow by the mode of above-mentioned fast relaxation ion doping
Ring, such as, affect saturation magnetization, ferromagnetic resonance line width etc..Therefore, need a kind of Ferrite Material at present badly and can keep it
On the basis of his stable performance, increase self-rotating wave linewidth, thus reach the needs of application under high power.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of prior art, it is provided that a kind of High-Power Microwave Ferrite Material and
Its preparation method, on the basis of keeping other stable performances, increases the self-rotating wave linewidth of material, compared to of the prior art
Microwave ferrite material, the microwave ferrite material that the present invention provides is more suitable for the microwave components design under high power conditions.
The above-mentioned purpose of the present invention is achieved by following technical solution:
A kind of High-Power Microwave Ferrite Material, described Ferrite Material includes multiple crystal grain and sealing coat；Plurality of
Crystal grain is adjacent one another are, and is isolated by sealing coat between any two crystal grain, and the border of multiple crystal grain is isolated layer and surrounds.
At above-mentioned a kind of High-Power Microwave Ferrite Material, the principal phase of described crystal grain is garnet structure；In sealing coat
Containing Si element.
At above-mentioned a kind of High-Power Microwave Ferrite Material, the chemical formula of described garnet structure is (YxGd1-x)3FeyO12；In described chemical formula, x is positive number, and x is not more than 1；Y is positive number, and y is not more than 5.
At above-mentioned a kind of High-Power Microwave Ferrite Material, described sealing coat (102) also comprises+divalent M element.
At above-mentioned a kind of High-Power Microwave Ferrite Material, the saturation magnetization of described Ferrite Material is 1331-
1754G；The ferromagnetic resonance line width of described Ferrite Material is 132-151Oe；The spin wave resonance linewidth of described Ferrite Material
For 2.9-14.5Oe.
The preparation method of a kind of High-Power Microwave Ferrite Material, comprises the steps:
Step (one), according to chemical formula (YxGd1-x)3FeyO12, it is the x ratio than y according to the ratio of Y element and Fe element
Mixing Fe2O3Powder and Y2O3Powder, is configured to mixture of powders；Mixture of powders is carried out ball-milling treatment and heat treated；
Step (two), will process after mixture of powders dissolve in gel solution, described gel solution comprises element silicon；
Step (three), will dissolve in mixture of powders gel solution dry, form powder to be sintered；
Step (four), described powder to be sintered is carried out secondary ball milling process after, described powder to be sintered is pressed into and treats
Sintering blank；
Step (five), described blank to be sintered is sintered.
In the preparation method of above-mentioned a kind of High-Power Microwave Ferrite Material, in described step (), powder is mixed
Thing heating treatment method is: temperature is 1050-1200 DEG C, is incubated 2-5 hour.
In the preparation method of above-mentioned a kind of High-Power Microwave Ferrite Material, in described step (two), gel solution
Prepared by following steps:
Preparation Si (OC2H5)4With M (CH3COO)24H2The mixed solution of O, wherein Si (OC2H5)4For providing Si element, M
(CH3COO)24H2O is used for generating M element；In described mixed solution, add hydrochloric acid be catalyzed, form gel solution；Described
Gel solution generates quality is mixture of powders quality 0.1～0.6% containing Si element compound；Gel solution generates
The 0.1-0.2% that quality is mixture of powders quality of M element compound.
In the preparation method of above-mentioned a kind of High-Power Microwave Ferrite Material, described hydrochloric acid volume is gel solution volume
2-3%, concentration is 12mol/l.
In the preparation method of above-mentioned a kind of High-Power Microwave Ferrite Material, in described step (four), secondary ball milling
During process, as dispersant, described powder is carried out wet ball grinding with ethanol；Described powder to be sintered is pressed into base to be sintered
During part, applying pressure is 11000-13000psi.
Preparation method at above-mentioned a kind of High-Power Microwave Ferrite Material, it is characterised in that: described step (five)
In, sintering temperature is 1400-1550 DEG C, and sintering time is 2.5-3.5 hour.
The present invention compared with prior art has the advantage that
(1) present invention uses the feature isolated between multiple crystal grain by sealing coat, prevents crystal grain in sintering process
Increase, reduce crystallite dimension, it is achieved that add the effect of self-rotating wave linewidth, improve the highest suitable power of material.
(2) contain the feature of element silicon during the present invention uses sealing coat, preferably prevent the increasing of crystal grain in sintering process
Long, reduce crystallite dimension, it is achieved that add the effect of self-rotating wave linewidth, further increase the highest applicable merit of material
Rate.
(3) present invention uses the chemical formula of described garnet structure to be (YxGd1-x) 3FeyO12, and x in described chemical formula
For positive number and no more than 1, y is positive number and the feature of no more than 5, it is achieved that on the basis of increasing self-rotating wave linewidth, it is thus achieved that can
The saturation magnetization adjusted, improves the convenience of materials application.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of High-Power Microwave Ferrite Material；
Fig. 2 is the real a kind of High-Power Microwave ferrite material preparation method for material flow chart of the present invention.
Detailed description of the invention
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings:
The principle of the present invention is: the present invention introduces containing silicon (Si) unit between multiple crystal grain of microwave ferrite material
The sealing coat of element, owing to described sealing coat prevents crystal grain increase in sintering process, reduces crystallite dimension, so increasing
Self-rotating wave linewidth；Owing to the introducing of described sealing coat does not affect the elementary composition of crystal grain body and crystal structure, and sealing coat
Thickness is at nanoscale, and proportion is the least in the material, thus less to other performance impacts of microwave ferrite.
Being illustrated in figure 1 the structural representation of a kind of High-Power Microwave Ferrite Material, as seen from the figure, a kind of high power is micro-
Ripple Ferrite Material, including multiple crystal grain 101 and sealing coat 102；Plurality of crystal grain 101 is adjacent one another are, and any two is brilliant
Being isolated by sealing coat 102 between grain 101, the border of multiple crystal grain 101 is isolated layer 102 and surrounds.
The principal phase of described crystal grain (101) is garnet structure；Containing Si element in sealing coat (102).
The chemical formula of described garnet structure is (YxGd1-x)3FeyO12；In described chemical formula, x is positive number, and x is not more than 1；
Y is positive number, and y is not more than 5.
Described sealing coat (102) also comprises+divalent M element.
The saturation magnetization of described Ferrite Material is 1331-1754G；The ferromagnetic resonance line width of described Ferrite Material
For 132-151Oe；The spin wave resonance linewidth of described Ferrite Material is 2.9-14.5Oe.
It is illustrated in figure 2 the real a kind of High-Power Microwave ferrite material preparation method for material flow chart of the present invention, as seen from the figure, one
Plant the preparation method of High-Power Microwave Ferrite Material, comprise the steps:
Step (one), according to chemical formula (YxGd1-x)3FeyO12, it is the x ratio than y according to the ratio of Y element and Fe element
Mixing Fe2O3Powder and Y2O3Powder, is configured to mixture of powders；Mixture of powders is carried out ball-milling treatment and heat treated；Right
Mixture of powders heating treatment method is: temperature is 1050-1200 DEG C, is incubated 2-5 hour.
Step (two), will process after mixture of powders dissolve in gel solution, described gel solution comprises element silicon；Solidifying
Sol solution is prepared by following steps:
Preparation Si (OC2H5)4With M (CH3COO)24H2The mixed solution of O, wherein Si (OC2H5)4For providing Si element, M
(CH3COO)24H2O is used for generating M element；In described mixed solution, add hydrochloric acid be catalyzed, form gel solution, wherein
Hydrochloric acid volume is the 2-3% of gel solution volume, and concentration is 12mol/l；Described gel solution generates the element compound Han Si
Quality is mixture of powders quality 0.1～0.6%；The quality of the M element compound generated in gel solution is that powder mixes
The 0.1-0.2% of compound quality.
Step (three), will dissolve in mixture of powders gel solution dry, form powder to be sintered；
Step (four), described powder to be sintered is carried out secondary ball milling process after, described powder to be sintered is pressed into and treats
Sintering blank；When secondary ball milling processes, as dispersant, described powder is carried out wet ball grinding with ethanol；By described powder to be sintered
When end is pressed into blank to be sintered, applying pressure is 11000-13000psi.
Step (five), being sintered described blank to be sintered, sintering temperature is 1400-1550 DEG C, and sintering time is
2.5-3.5 hour.
Embodiment 1
A kind of High-Power Microwave ferrite material preparation method for material flow process, comprises the following steps.
Step (one), according to predicted elemental proportions mixture of powders.With the chemical formula of crystal grain for (YxGd1-x)3FeyO12
In case of, take x=1, y=4.85；It is 3 to 4.85 mixing Fe according to the ratio of Y element and Fe element2O3Powder and Y2O3
Powder, is configured to described mixture of powders.
Step (two), described mixture of powders is carried out ball-milling treatment.Preferably, using ethanol as dispersant to described powder
End carries out wet ball grinding.
Step (three), the mixture of powders after described ball-milling treatment is carried out heat treatment.In embodiments of the present invention, by institute
State the mixture of powders after ball-milling treatment and be heated to 1100 DEG C, be incubated 3 hours.
Step (four), dissolving in gel solution by the mixture of powders after described heat treatment, described gel solution comprises silicon
(Si) element and manganese (Mn) element.
The preparation method of gel solution is:
Preparation tetraethoxysilance (Si (OC2H5)4) and manganese acetate (Mn (CH3COO)24H2O) mixed solution, wherein Si
(OC2H5)4For providing Si element, Mn (CH3COO)24H2O is used for generating Mn element；In described mixed solution, add hydrochloric acid enter
Row catalysis, forms gel solution, and wherein hydrochloric acid volume is the 2.5% of gel solution volume, and concentration is 12mol/l；Described gel
Solution generates quality is mixture of powders quality 0.4% containing Si element compound；The Mn element generated in gel solution
The quality of compound is the 0.15% of mixture of powders quality.
Step (five), dry described gel solution, form powder to be sintered.Preferably, described gel solution temperature is dried
Can be 60 degrees Celsius.
Step (six), described powder to be sintered is carried out secondary ball milling process after, described powder to be sintered is pressed into and treats
Sintering blank.Preferably, as dispersant, described powder is carried out wet ball grinding using ethanol, described in be pressed into blank bag to be sintered
Including applying pressure is 12000psi.
Step (seven), described blank to be sintered is sintered.In embodiments of the present invention, sintering temperature is 1500 DEG C,
Sintering time is 3 hours.
The present invention implements by using said method, it is achieved that preparation has the microwave ferrite of described Si element sealing coat
Material, and then make the Ferrite Material of preparation on the basis of keeping other stable performances, reduce self-rotating wave linewidth, be suitable for
Microwave components design under high power conditions.
Embodiment 2
A kind of High-Power Microwave ferrite material preparation method for material flow process, comprises the following steps.
Step (one), according to predicted elemental proportions mixture of powders.With the chemical formula of crystal grain for (YxGd1-x)3FeyO12
In case of, take x=0.5, y=4.85；It is 0.5 to 4.85 mixing Fe according to the ratio of Y element and Fe element2O3Powder and
Y2O3Powder, is configured to described mixture of powders.
Step (two), described mixture of powders is carried out ball-milling treatment.Preferably, using ethanol as dispersant to described powder
End carries out wet ball grinding.
Step (three), the mixture of powders after described ball-milling treatment is carried out heat treatment.In embodiments of the present invention, by institute
State the mixture of powders after ball-milling treatment and be heated to 1100 DEG C, be incubated 3 hours.
Step (four), dissolving in gel solution by the mixture of powders after described heat treatment, described gel solution comprises silicon
(Si) element and manganese (Mn) element.
The preparation method of gel solution is:
Preparation tetraethoxysilance (Si (OC2H5)4) and calcium acetate (Ca (CH3COO)24H2O) mixed solution, wherein Si
(OC2H5)4For providing Si element, Ca (CH3COO)24H2O is used for generating Ca element；In described mixed solution, add hydrochloric acid enter
Row catalysis, forms gel solution, and wherein hydrochloric acid volume is the 2.5% of gel solution volume, and concentration is 12mol/l；Described gel
Solution generates quality is mixture of powders quality 0.4% containing Si element compound；The Ca element generated in gel solution
The quality of compound is the 0.15% of mixture of powders quality.
Step (five), dry described gel solution, form powder to be sintered.Preferably, described gel solution temperature is dried
Can be 60 degrees Celsius.
Step (six), described powder to be sintered is carried out secondary ball milling process after, described powder to be sintered is pressed into and treats
Sintering blank.Preferably, as dispersant, described powder is carried out wet ball grinding using ethanol, described in be pressed into blank bag to be sintered
Including applying pressure is 12000psi.
Step (seven), described blank to be sintered is sintered.In embodiments of the present invention, sintering temperature is 1500 DEG C,
Sintering time is 3 hours.
The present invention implements by using said method, it is achieved that preparation has the microwave ferrite of described Si element sealing coat
Material, and then make the Ferrite Material of preparation on the basis of keeping other stable performances, reduce self-rotating wave linewidth, be suitable for
Microwave components design under high power conditions.
Effect:
In embodiments of the present invention, by TEM, (Transmission Electron Microscope, projection electron shows
Micro mirror) microwave ferrite material implementing the present invention to provide observes, and determines that described material comprises multiple crystal grain.At TEM
Under image, determine the size of the plurality of crystal grain between 2 microns to 20 microns, visible substantially boundary between crystal grain.At this
In bright embodiment, (X-Ray Diffraction, X penetrate to carry out XRD by the microwave ferrite material that the present invention implements provide
Line diffraction) spectral line test, and then determine that the principal phase of the plurality of crystal grain is garnet structure.Here, described principal phase refers to that XRD composes
The phase that three peak positions that in line, intensity is the highest are corresponding.It should be noted that be limited to different process, described XRD spectrum in addition to principal phase
Line may also contain other dephasigns, such as Fe2O3Equal, the present invention to principal phase outside other dephasigns be not especially limited.
Secondly carry out in detail described sealing coat 102 describing.In embodiments of the present invention, schemed by high-resolution TEM
Picture, it may be determined that have sealing coat between described crystal grain, described separation layer thickness is between 5 nanometers to 20 nanometers.In the present invention
In enforcement, the crystal structure of described sealing coat is identical with described crystal grain, but the elementary composition and described crystal grain of described sealing coat is not
With.Specifically, by EDS (Energy Dispersive Spectrometer, energy disperse spectroscopy) respectively to crystal grain and sealing coat two
Individual region is tested, it may be determined that these two regions have different elementary composition, and concrete described sealing coat contains silicon (Si)
Element, and described crystal grain the most siliceous (Si) element.It should be noted that the impact caused due to atomic radius difference, described every
Absciss layer can also have different crystal structures, even non crystalline structure from crystal grain, and the actual crystal of sealing coat is tied by the present invention
Structure is not construed as limiting.
In order to describe the microwave magnetic energy of above-mentioned microwave ferrite material, respectively to the embodiment of the present invention having containing Si unit
The sealing coat of element contrasts with the microwave ferrite of the sealing coat not having containing Si element.Under the same conditions to these two groups of samples
Product carry out microwave magnetic can be tested, and result is as shown in table 1, and wherein sample 1 represents the material sample without described sealing coat, sample
Product 2 represent the material sample with described sealing coat.By table 1 it can be seen that introducing after described sealing coat, other of sample
Performance parameter variations is less, and self-rotating wave linewidth significantly increases.
Table 1. introduces the sealing coat impact on material property
In sum, a kind of High-Power Microwave Ferrite Material that inventive embodiments provides, by between multiple crystal grain
Introduce the sealing coat containing silicon (Si) element, owing to described sealing coat prevents crystal grain increase in sintering process, reduce
Crystallite dimension, so increasing self-rotating wave linewidth；Owing to the introducing of sealing coat does not affect the elementary composition of crystal grain body and crystal
Structure, and separation layer thickness is at nanoscale, proportion is the least in the material, so other performance impacts to microwave ferrite
Less.In sum, based on technical characteristic disclosed by the invention, the microwave ferrite material that the present invention provides is keeping other property
On the basis of stablizing, reduce self-rotating wave linewidth, and then be applicable to the microwave components design under high power conditions.
On the basis of the above-mentioned microwave ferrum oxygen with insulation layer structure, in order to, while increasing self-rotating wave linewidth, make
The saturation magnetization obtaining material is adjustable, and then is applied to the microwave components design under high power conditions more easily.The present invention
Embodiment provides a kind of crystal grain and comprises gadolinium (Gd) element and the microwave ferrite of yttrium (Y) element.Specifically, the principal phase of crystal grain is
Garnet structure, the chemical formula of described garnet structure is (YxGd1-x)3FeyO12.In described chemical formula, x is less than or equal to 1, changes x
I.e. change gadolinium (Gd) element and the ratio of yttrium (Y) element, the saturation magnetization of material can be regulated by changing x.Describedization
In formula, y is less than or equal to 5, and this is owing to this y of garnet structure for not having described sealing coat is equal to 5, but in order to draw
Entering sealing coat to need to use suitably iron deficiency formula, the occurrence of this y is 4.85 in embodiments of the present invention.Implement in the present invention
In example, it is prepared for the x two samples equal to 1 and x equal to 0.5 respectively, is designated as sample 3 and sample 4 respectively, this sample 3 and sample 4
It is respectively provided with the sealing coat containing Si element.Respectively these two samples being carried out magnetism testing, result is as shown in table 2.Can by table 2
Knowing, along with the reduction of x, i.e. along with the increase of Gd content, the saturation magnetization of material is decreased obviously, and other Parameters variation are relatively
Little.
Table 2. regulates the impact on material property of Y and the Gd element ratio
In sum, the present invention, by the basis of introducing described sealing coat, changes Gd and the ratio of Y element in crystal grain
Example, it is achieved that while increasing self-rotating wave linewidth, it is thus achieved that adjustable saturation magnetization.
On the basis of the above-mentioned microwave ferrum oxygen with insulation layer structure, for the ease of the formation of sealing coat, described isolation
Layer also comprise manganese (Mn) element or calcium (Ca) element or other+divalent element or the complex element of+divalent element.Specifically, institute is worked as
Stating the crystal structure of crystal grain when being garnet structure, Fe ion shows as+trivalent, so that Si in described sealing coat4+Ion
The Fe in garnet structure can be replaced3+Ion, needs with Mn2+Or Ca2+Ion or other+divalent ion or+divalent ion mixed
Close ion as auxiliary.The present invention is in order to ensure that electric neutrality introduces other assisting ions and is not especially limited.
In sum, the present invention, by the basis of introducing described sealing coat, uses Mn2+Or other+divalent ion is auxiliary
Help ion so that the formation of described sealing coat is more convenient.
The content not being described in detail in description of the invention belongs to the known technology of those skilled in the art.
Claims (12)
1. a High-Power Microwave Ferrite Material, it is characterised in that: described Ferrite Material include multiple crystal grain (101) and every
Absciss layer (102)；Plurality of crystal grain (101) is adjacent one another are, and between any two crystal grain (101) by sealing coat (102) every
From, the border of multiple crystal grain (101) is isolated layer (102) and surrounds.
A kind of High-Power Microwave Ferrite Material the most according to claim 1, it is characterised in that: described crystal grain (101)
Principal phase is garnet structure；Containing Si element in sealing coat (102).
A kind of High-Power Microwave Ferrite Material the most according to claim 2, it is characterised in that: described garnet structure
Chemical formula is (YxGd1-x)3FeyO12；In described chemical formula, x is positive number, and x is not more than 1；Y is positive number, and y is not more than 5.
A kind of High-Power Microwave Ferrite Material the most according to claim 2, it is characterised in that: described sealing coat (102)
Also comprise+divalent M element.
5. according to a kind of High-Power Microwave Ferrite Material one of claim 1-4 Suo Shu, it is characterised in that: described ferrite
The saturation magnetization of material is 1331-1754G；The ferromagnetic resonance line width of described Ferrite Material is 132-151Oe；Described ferrum
The spin wave resonance linewidth of ferrite is 2.9-14.5Oe.
6. the preparation method of a High-Power Microwave Ferrite Material, it is characterised in that: comprise the steps:
Step (one), according to chemical formula (YxGd1-x)3FeyO12, it is the x ratio mixing than y according to the ratio of Y element and Fe element
Fe2O3Powder and Y2O3Powder, is configured to mixture of powders；Mixture of powders is carried out ball-milling treatment and heat treated；
Step (two), will process after mixture of powders dissolve in gel solution, described gel solution comprises element silicon；
Step (three), will dissolve in mixture of powders gel solution dry, form powder to be sintered；
Step (four), described powder to be sintered is carried out secondary ball milling process after, described powder to be sintered is pressed into be sintered
Blank；
Step (five), described blank to be sintered is sintered.
The preparation method of a kind of High-Power Microwave Ferrite Material the most according to claim 6, it is characterised in that: described step
Suddenly in (one), it is: temperature is 1050-1200 DEG C to be incubated 2-5 hour to mixture of powders heating treatment method.
The preparation method of a kind of High-Power Microwave Ferrite Material the most according to claim 6, it is characterised in that: described
In step (two), gel solution is prepared by following steps:
Preparation Si (OC2H5)4With M (CH3COO)24H2The mixed solution of O, wherein Si (OC2H5)4For providing Si element, M
(CH3COO)24H2O is used for generating M element；In described mixed solution, add hydrochloric acid be catalyzed, form gel solution；Described
Gel solution generates quality is mixture of powders quality 0.1～0.6% containing Si element compound；Gel solution generates
The 0.1-0.2% that quality is mixture of powders quality of M element compound.
The preparation method of a kind of High-Power Microwave Ferrite Material the most according to claim 8, it is characterised in that: described salt
Acid volume is the 2-3% of gel solution volume, and concentration is 12mol/l.
The preparation method of a kind of High-Power Microwave Ferrite Material the most according to claim 6, it is characterised in that: described
In step (three), dry temperature and be 50-70 DEG C.
The preparation method of 11. a kind of High-Power Microwave Ferrite Materials according to claim 6, it is characterised in that: in institute
State in step (four), when secondary ball milling processes, as dispersant, described powder is carried out wet ball grinding with ethanol；Described waiting is burnt
When knot powder is pressed into blank to be sintered, applying pressure is 11000-13000psi.
The preparation method of 12. a kind of High-Power Microwave Ferrite Materials according to claim 6, it is characterised in that: in institute
Stating in step (five), sintering temperature is 1400-1550 DEG C, and sintering time is 2.5-3.5 hour.
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| CN114436635B (en) * | 2022-02-23 | 2023-05-05 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Microwave ferrite material with Gao Zixuan wave line width and preparation method thereof |
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