CN106206543A - Based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof - Google Patents
Based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof Download PDFInfo
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- CN106206543A CN106206543A CN201610634988.6A CN201610634988A CN106206543A CN 106206543 A CN106206543 A CN 106206543A CN 201610634988 A CN201610634988 A CN 201610634988A CN 106206543 A CN106206543 A CN 106206543A
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- aluminum nitride
- keyset
- nano aluminum
- polyimide material
- metal column
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 64
- 239000004642 Polyimide Substances 0.000 title claims abstract description 58
- 229920001721 polyimide Polymers 0.000 title claims abstract description 58
- 239000002131 composite material Substances 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 23
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 13
- 239000000725 suspension Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 4
- 239000007822 coupling agent Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000875 high-speed ball milling Methods 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229920000642 polymer Polymers 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- -1 keyset base Body 1 Chemical compound 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229920003230 addition polyimide Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
Abstract
The invention provides a kind of based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof, including keyset matrix, metal column array structure is had in described keyset matrix, the Kapton that space between described metal column array is strengthened by aluminium nitride is filled, and described metal column array extends vertically through in described keyset matrix.Due to the fact that polymide dielectric performance is good, micro Process is functional, and nano aluminum nitride has good heat conductivility and mechanical property simultaneously, the heat conductivility of keyset can be improved, and extend its service life, thus low cost, high-performance can be realized, it is expected to realize commercial application.
Description
Technical field
The present invention relates to microelectronic packaging technology field, in particular it relates to one is multiple based on nano aluminum nitride/polyimides
Condensation material keyset and preparation method thereof.
Background technology
The three-dimensional stacked encapsulation interconnected based on silicon through hole (TSV) is maximum with its stacking density, interconnection line is the shortest between sheet, profile
Size is minimum and significantly reduces power consumption, the potentiality that promote chip speed and attention be it is considered to be wire bonding stacked package
The most potential high density 3D encapsulation technology, encapsulates also known as TSV.
TSV keyset is the metal column array according to design distribution and fills dielectric composition therebetween, PI, BCB etc.
It is the most frequently used polymeric media material of current insulating medium layer, although have that process is simple, efficiency is high, low cost, step cover
Lid waits well remarkable advantage, but thermal conductivity is low, thermal coefficient of expansion is bigger than normal, it is swelling by organic solvent to be prone to, and have impact on keyset
Performance.Nano aluminum nitride (AlN) coefficient of linear thermal expansion with Si high with its thermal conductivity close to mating, good mechanical performance and
Nontoxic advantage and can apply to strengthen Kapton, and then obtain high comprehensive performance laminated film.
Through retrieving, 103325754A, polymer composite material adapter plate based on CNT enhancing and preparation method thereof,
The invention provides a kind of polymer composite material adapter plate based on CNT enhancing and preparation method thereof, including metal
Post, side wall insulating film, carbon nanotube network and polymer, wherein: the sidewall surrounding metal column with side wall insulating film is formed
Metal column array regular array is in the keyset matrix that carbon nanotube network and polymer form, and carbon nano tube network is tied
Space and carbon nanotube network in structure are complete by polymer-filled with the space of metal intercolumniation.
But, in the polymer composite material adapter plate of CNT enhancing and preparation process, side wall insulating film may be deposited
In certain defect, this adds the difficulty of preparation technology.It addition, the existence of CNT may affect the insulation of dielectric layer
And dielectric properties, it is unfavorable for the raising of keyset whole synthesis performance.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide a kind of multiple based on nano aluminum nitride/polyimides
Condensation material keyset and preparation method thereof, the present invention can improve thermal conductivity and the mechanical property of keyset, can significantly reduce again
Its thermal coefficient of expansion, and process costs is low, can be used for industrialized production.
According to an aspect of the present invention, it is provided that a kind of based on nano aluminum nitride/composite polyimide material keyset, bag
Including keyset matrix, have metal column array structure in described keyset matrix, the space between described metal column array is by nanometer
The Kapton that aluminium nitride strengthens is filled, and described metal column array extends vertically through in described keyset matrix.
Preferably, in the Kapton that described nano aluminum nitride strengthens, the mass content of aluminium nitride be 8-20%,
Thickness is 100-300 micron.
Preferably, the mass content of described aluminium nitride is 15-20%.The aluminium nitride modified polyimide of high-quality mark
Thin film can significantly improve thermal conductivity, significantly reduces hot expansibility.
Preferably, the one that metal is chromium, copper, gold, titanium, nickel or alloy of described metal column array.
Polyimides has good insulating capacity, excellent micro Process performance, and is used in keyset, but polyamides
The thermal conductivity of imines is low, is unfavorable for the heat radiation of keyset, and thermal coefficient of expansion is big, easily produces thermal mismatching, and limits this turn
The application of fishplate bar.Nano aluminum nitride but has higher thermal conductivity, good mechanical property, polyimides and nano aluminum nitride two
The composite that person is formed, nano aluminum nitride is uniformly distributed in polyimide matrix, connects into netted, forms a micro-heat conduction
Passage, compared to pure polyimides, thermal conductivity significantly improves, and hot expansibility significantly reduces.This property to keyset undoubtedly
Can improve and have great importance.
How to develop a set of composite material preparation process and be allowed to be compatible with the micro fabrication of keyset, becoming in the industry
One important problem.At present, in preparation composite material, nano aluminum nitride is easily reunited, and so makes nano silicon nitride
The content of aluminum is the highest, and generally less than 10%, and it is unsuitable for playing the combination property of composite.
The nano aluminum nitride that the present invention processed by utilizing silane coupler (preferably KH550), can effectively stop
The reunion of nano aluminum nitride, and employ clipping the ball grinding process, it is possible to obtain the aluminium nitride modification polyamides of high-quality mark
Imines thin film.
According to another aspect of the present invention, it is provided that a kind of based on nano aluminum nitride/composite polyimide material keyset
Preparation method, described method by polyimide matrix introduce nano aluminum nitride reinforcement, it is thus achieved that nano aluminum nitride increase
Strong polyimides composite suspension liquid, and then prepare the polyimide composite film of nano aluminum nitride enhancing also by spin coating proceeding
It is applied in keyset, thus obtains based on nano aluminum nitride/composite polyimide material keyset.
Preferably, described method comprises the steps:
The first step, with coupling agent, nano aluminum nitride is modified, by ultrasonic and high speed ball milling dispersing technology, by modification
After nano aluminum nitride be scattered in polyimide coating glue, it is thus achieved that the polyimides suspension containing nano aluminum nitride；
Second step, on a glass substrate positive-glue removing are as sacrifice layer, and sputtering seed layer on sacrifice layer, whirl coating light again
Carve, glass substrate surface is patterned process, form metal column array by plating；Remove the photoetching graphically stayed
Glue, removes exposed Seed Layer, obtains the metal column array exposed；
3rd step, the polyimides suspension containing the nano aluminum nitride first step prepared by spin coating proceeding are filled out
It is charged to metal column array, elevated cure；Then surface grinding processes and makes metal column top expose from polyimide composite film,
Remove sacrifice layer photoresist, keyset is discharged, thus obtain based on nano aluminum nitride/composite polyimide material switching
Plate.
It is highly preferred that in the first step:
Nano aluminum nitride is carried out pretreatment, is made into aluminium nitride suspension with hydrophilic solvent, through ultrasonic disperse and ball milling
Rear addition polyimide coating glue, then obtain the polyimides suspension containing nano aluminum nitride by ball-milling technology.
It is highly preferred that described clipping the ball grinding process, rotational speed of ball-mill is set to 450-600 rpm.
It is highly preferred that described coupling agent is silane coupler.
It is highly preferred that described silane coupler is KH550.
Compared with prior art, the present invention has a following beneficial effect:
The present invention first passes through litho developing process and is patterned, and plating forms metal column array, then in spin coating mode
Being packed into aluminium nitride/polyimide composite film in metal column array gap, surface grinding processes and makes metal column top from poly-
Compound exposes, thus forms a kind of nano aluminum nitride/composite polyimide material keyset.Preparation method work of the present invention
Process flow is simple, cost is relatively low, can be used for industrialized production.
The present invention instead of traditional polyimides as dielectric by nano aluminum nitride/polyimide composite film,
Making the thermal conductivity of polymer keyset, mechanical strength have greatly improved, thermal coefficient of expansion is remarkably decreased simultaneously, expands switching
The range of plate, extends the service life of keyset.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the further feature of the present invention,
Purpose and advantage will become more apparent upon:
Fig. 1 is the structural representation of the keyset of one embodiment of the invention, and wherein (a) is plane graph, and (b) is longitudinal section
Figure；
Fig. 2 is the preparation method flow chart of one embodiment of the invention.
In figure: keyset matrix 1, metal column array 2, the Kapton 3 that nano aluminum nitride strengthens.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in the technology of this area
Personnel are further appreciated by the present invention, but limit the present invention the most in any form.It should be pointed out that, the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement.These broadly fall into the present invention
Protection domain.
As it is shown in figure 1, a kind of composite polyimide material keyset strengthened based on nano aluminum nitride, including keyset base
Body 1, has metal column array 2, the space between described metal column array 2 to be strengthened by nano aluminum nitride in described keyset matrix
Kapton 3 is filled, and described metal column array 2 extends vertically through in described keyset matrix 1.
In the present embodiment, in the Kapton 3 that described nano aluminum nitride strengthens, the mass content of aluminium nitride is 8-
20%, thickness is 100-300 micron.
As preferably, the mass content of described aluminium nitride is 15-20%.It is more highly preferred to, the quality of described aluminium nitride
Content is 20%.
In the present embodiment, described metal column array 2 is the one of chromium, copper, gold, titanium, nickel or alloy.
Keyset described in the present embodiment instead of traditional polyimides by nano aluminum nitride/polyimide composite film and makees
For dielectric.Thermal conductivity and the mechanical property of keyset can be improved, its thermal coefficient of expansion can be significantly reduced again.
As in figure 2 it is shown, a kind of preparation method based on nano aluminum nitride/composite polyimide material keyset, described side
Method comprises the steps:
First, the preparation of Kapton that nano aluminum nitride strengthens, specifically include following steps:
The first step, elder generation mix Silane coupling agent KH550 and solvent acetone, add aluminum nitride nanometer powder, ultrasonic disperse 20-
30min, makes acetone naturally volatilize in atmosphere, then put people in vacuum drying oven in 150 DEG C, react 2h, then to receiving
Rice aluminium nitride modification success, is then added in dispersant (NMP), ultrasonic disperse 15min；
Second step, the dispersion liquid first step obtained, add in ball grinder, then strength ball milling dispersion in ball mill
2h, rotational speed of ball-mill is set to 450-600 rpm；
3rd step, in the dispersion liquid of second step add quality be the polyimide coating glue of 10g, nano aluminum nitride quality
Mark should keep about 8-20%, and the composite property of this component is obviously improved, and the polyamides containing nano aluminum nitride
Imines suspension film property is strong, is still compatible with micro fabrication；It is then followed by ball milling 10h；
4th step, the dispersion liquid that the 3rd step obtains being placed in vacuum tank, vacuum keeps 30min, obtained nano aluminum nitride/
The compound suspension of polyimides.
Then, the preparation of keyset metal column array, specifically include following steps:
5th step, get rid of 5 microns of thick photoresists as sacrifice layer on a glass substrate, sputter Cr/Cu on photoresist surface
Seed Layer, wherein: Cr thickness 20 nanometer, Cu thickness 80 nanometer；
6th step, at the Cr/Cu Seed Layer surface spin coating photoresist of the 5th step graphical, at conventional electroplating technology bar
Electroplating Cu under part, thickness is 100-300 micron；
The photoresist that 7th step, removal the 6th step graphically stay, removes the Seed Layer exposed, exposes exposed metal column
Array.
Finally, the preparation of nano aluminum nitride/composite polyimide material keyset, specifically include following steps:
8th step, utilize the compound suspension spin coating of nano aluminum nitride/polyimides that the 4th step obtains by spin coating proceeding
The metal column array obtained to the 7th step, and elevated cure, cure profile is to heat up 1 DEG C for 1 minute, then at 90 DEG C, 140 DEG C,
160 DEG C, 190 DEG C, 220 DEG C, 250 DEG C are incubated 1 hour respectively, last furnace cooling；
9th step, utilize mechanical means to carry out grinding, make metal column top expose from laminated film, go sacrifice layer photoetching
Glue, discharges keyset, thus obtains based on nano aluminum nitride/composite polyimide material keyset.
The present invention first passes through litho developing process and is patterned, and plating forms metal column array, then in spin coating mode
Being packed into aluminium nitride/polyimide composite film in metal column array gap, surface grinding processes and makes metal column top from poly-
Compound exposes, thus forms a kind of nano aluminum nitride/composite polyimide material keyset.Preparation method work of the present invention
Process flow is simple, cost is relatively low, can be used for industrialized production.
It is pointed out that above-described embodiment uses micro-processing method to be one embodiment of the invention, it is also possible to, metal
The size of structure and kind, be not limited solely to the description of examples detailed above, all can realize the purpose of the present invention.
Above examples describing advantages of the present invention and micro-processing method, skilled person will appreciate that of the industry, not
On the premise of departing from spirit and scope of the invention, the present invention also has various improvement and optimization, and these improve and optimization both falls within and wants
In seeking the scope of the invention of protection, claimed scope is defined by appending claims and equivalent thereof.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various deformation or amendment within the scope of the claims, this not shadow
Ring the flesh and blood of the present invention.
Claims (10)
1. one kind based on nano aluminum nitride/composite polyimide material keyset, it is characterised in that include keyset matrix,
Metal column array structure, the polyamides that the space between described metal column array is strengthened is had by nano aluminum nitride in described keyset matrix
Imines thin film is filled, and described metal column array extends vertically through in described keyset matrix.
One the most according to claim 1 exists based on nano aluminum nitride/composite polyimide material keyset, its feature
In, the one that metal is chromium, copper, gold, titanium, nickel or alloy of described metal column array.
One the most according to claim 1 exists based on nano aluminum nitride/composite polyimide material keyset, its feature
In, in the Kapton that described nano aluminum nitride strengthens, the mass content of aluminium nitride is 8-20%, thickness is 100-
300 microns.
One the most according to claim 2 exists based on nano aluminum nitride/composite polyimide material keyset, its feature
In, the mass content of described aluminium nitride is 15-20%.
5. based on nano aluminum nitride/composite polyimide material keyset according to described in any one of claim 1-4
Preparation method, it is characterised in that described method is by introducing nano aluminum nitride reinforcement in polyimide matrix, it is thus achieved that nanometer
The polyimides composite suspension liquid that aluminium nitride strengthens, and then prepare the polyimides of nano aluminum nitride enhancing again by spin coating proceeding
Close thin film and be applied in keyset, thus obtaining based on nano aluminum nitride/composite polyimide material keyset.
A kind of preparation method based on nano aluminum nitride/composite polyimide material keyset the most according to claim 5,
It is characterized in that, described method comprises the steps:
The first step, with coupling agent, nano aluminum nitride is modified, by ultrasonic and high speed ball milling dispersing technology, by modified
Nano aluminum nitride is scattered in polyimide coating glue, it is thus achieved that the polyimides suspension containing nano aluminum nitride；
Second step, on a glass substrate positive-glue removing are as sacrifice layer, and sputtering seed layer on sacrifice layer, whirl coating photoetching again, right
Glass substrate surface is patterned process, forms metal column array by plating；Remove the photoresist graphically stayed, remove
Exposed Seed Layer, obtains the metal column array exposed；
3rd step, the polyimides suspension containing the nano aluminum nitride first step prepared by spin coating proceeding are filled into
Metal column array, elevated cure, then surface grinding processes and makes metal column top expose from polyimide composite film, goes sacrificial
Domestic animal layer photoetching glue, discharges keyset, thus obtains based on nano aluminum nitride/composite polyimide material keyset.
A kind of preparation method based on nano aluminum nitride/composite polyimide material keyset the most according to claim 6,
It is characterized in that, in the first step:
Nano aluminum nitride is carried out pretreatment, is made into aluminium nitride suspension with hydrophilic solvent, add after ultrasonic and ball milling disperse
Enter polyimide coating glue, then obtain the polyimides suspension containing nano aluminum nitride by ball-milling technology.
A kind of preparation method based on nano aluminum nitride/composite polyimide material keyset the most according to claim 6,
It is characterized in that, described clipping the ball grinding process, rotational speed of ball-mill is set to 450-600 rpm.
9. a kind of based on nano aluminum nitride/composite polyimide material keyset according to described in any one of claim 6-8
Preparation method, it is characterised in that described coupling agent is silane coupler.
A kind of preparation side based on nano aluminum nitride/composite polyimide material keyset the most according to claim 9
Method, it is characterised in that described silane coupler is KH550.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610634988.6A CN106206543A (en) | 2016-08-04 | 2016-08-04 | Based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof |
Applications Claiming Priority (1)
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| CN117683457A (en) * | 2023-11-22 | 2024-03-12 | 华中科技大学 | Composite slurry for filling wafer channel, preparation method and application |
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