CN106206260A - A kind of preparation method of grid oxide layer - Google Patents
A kind of preparation method of grid oxide layer Download PDFInfo
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- CN106206260A CN106206260A CN201610854700.6A CN201610854700A CN106206260A CN 106206260 A CN106206260 A CN 106206260A CN 201610854700 A CN201610854700 A CN 201610854700A CN 106206260 A CN106206260 A CN 106206260A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052756 noble gas Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 230000008034 disappearance Effects 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 75
- 238000000034 method Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides the preparation method of a kind of grid oxide layer, first use an O in surface of silicon2Dividing potential drop carrys out the initial grid oxide layer of fast-growth, then, uses the 2nd O on initial grid oxide layer surface2Dividing potential drop and reduction growth rate grow new grid oxide layer, the initial thickness of grid oxide layer is target thickness with the thickness summation of new grid oxide layer, the initial grid oxide layer of fast-growth, obtain certain thickness initial grid oxide layer, reduce growth rate and grow new grid oxide layer, new grid oxide layer that is uniform and that be not easily decomposed can be obtained on initial grid oxide layer surface, this is because, reduce the growth rate of grid oxide layer, be i.e. the reaction rate reducing O Yu Si, such that it is able to guarantee that the reaction of O Yu Si fully generates SiO2, avoid SiO simultaneously2Generate 2SiO with Si and cause initial grid oxide layer and the disappearance of new grid oxide layer, obtain uniform grid oxide layer further.
Description
Technical field
The present invention relates to technical field of integrated circuits, be specifically related to the preparation method of a kind of grid oxide layer.
Background technology
Along with micro and the progress of technique of semiconductor product device size, polysilicon oxide layer growth technique is increasingly
Important, this technique not only can affect the performance of device, and if technique optimization not can produce serious causing yield heavily
The defect of big impact, such as grid oxic horizon disappearance, this will result in the huge disappearance of yield.
At present, growth technique many employings one-step method growth of polysilicon gate oxide layer, the most whole processing step only enters
The growth of row grid oxic horizon and there is no follow-up heat treatment, the shortcoming of the method is that the process window of device is less, the most negative
Unstable (Negative Bias Temperature Instability, the NBTI) problem of Bias Temperature is not easy debugging；Another
The method of kind is to have carried out the heat treatment of logical nitrogen after having grown grid oxic horizon, and the shortcoming of the method is obvious equally, the most easily produces
Giving birth to oxide layer film loss as shown in Figure 1 or disappearance, in Fig. 1, black hole represents that grid oxide layer lacks.
Summary of the invention
In order to overcome problem above, it is desirable to provide the preparation method of a kind of grid oxide layer, reached by two-step growth
To the target thickness of grid oxide layer and obtain uniform grid oxide layer.
In order to achieve the above object, the invention provides the preparation method of a kind of grid oxide layer, including:
Step 01 a: silicon substrate is provided；
Step 02: first containing O2Under atmosphere, use the first growth rate to grow initial grid oxide layer in surface of silicon；
Step 03: second containing O2Under atmosphere, use the second growth rate to grow new grid oxygen on initial grid oxide layer surface
Layer；The thickness of new grid oxide layer and the target thickness that thickness summation is required grid oxide layer of initial grid oxide layer；Wherein, the first growth speed
Rate is more than the second growth rate.
Preferably, the growth time of initial grid oxide layer is less than the growth time of new grid oxide layer.
Preferably, the growth time of new grid oxide layer is not less than 10s.
Preferably, first contains O2O in atmosphere2Dividing potential drop contains O higher than second2O in atmosphere2Dividing potential drop.
Preferably, the growth temperature of described initial grid oxide layer is higher than the growth temperature of described new grid oxide layer.
Preferably, when new grid oxide layer grows, use noble gas as main gas, O2As auxiliary gas.
Preferably, the flow of noble gas and the flow proportional of oxygen are not less than 500:1.
Preferably, the flow of noble gas is not less than 10slm, and the flow of oxygen is not less than 0.02slm.
Preferably, during the growth of initial grid oxide layer, employing reacting gas is N2O and H2Mixed gas, or O2And H2Mixed
Close gas.
Preferably, during the growth of initial grid oxide layer, N2O and H2Flow proportional be (180～220): 1, or O2With H2Stream
Amount ratio is (180～220): 1.
The preparation method of the grid oxide layer of the present invention, first uses an O in surface of silicon2It is initial that dividing potential drop carrys out fast-growth
Grid oxide layer, then, uses the 2nd O on initial grid oxide layer surface2Dividing potential drop and reduction growth rate grow new grid oxide layer, initial grid
The thickness summation of the thickness of oxygen layer and new grid oxide layer is target thickness, the initial grid oxide layer of fast-growth, obtain certain thickness at the beginning of
Beginning grid oxide layer, reduces growth rate and grows new grid oxide layer, can obtain on initial grid oxide layer surface uniform and be not easily decomposed
New grid oxide layer, this is because, reduce grid oxide layer growth rate, i.e. be reduce O Yu Si reaction rate, such that it is able to guarantee
The reaction of O Yu Si fully generates SiO2, avoid SiO simultaneously2+ Si → 2SiO reaction causes initial grid oxide layer and new grid oxide layer
Disappearance, obtain uniform grid oxide layer further.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscopic picture of grid oxide layer disappearance
Fig. 2 is the schematic flow sheet of the preparation method of the grid oxide layer of a preferred embodiment of the present invention
Fig. 3-5 is each preparation process schematic diagram of the preparation method of the grid oxide layer of a preferred embodiment of the present invention
Detailed description of the invention
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in this specific embodiment, the general replacement known to those skilled in the art is also
Contain within the scope of the present invention.
Below in conjunction with accompanying drawing 2-5 and specific embodiment, the present invention is described in further detail.It should be noted that, accompanying drawing is equal
Use the form simplified very much, use non-ratio accurately, and only in order to conveniently, clearly to reach to aid in illustrating the present embodiment
Purpose.
Refer to Fig. 2, the preparation method of the grid oxide layer of the present embodiment, including:
Step 01: refer to Fig. 3 a, it is provided that silicon substrate 00；
Concrete, silicon substrate 00 can be monocrystalline substrate, multicrystalline silicon substrate, or amorphous silicon substrate.In silicon substrate 00 also
Can have other functional structure before grid oxide layer preparation, such as fleet plough groove isolation structure, deep-well region etc..
Step 02: refer to Fig. 4, first containing O2Under atmosphere, used for first growth rate next life on silicon substrate 00 surface
Long initial grid oxide layer 10；
Step 03: refer to Fig. 5, second containing O2Under atmosphere, use the second growth rate on initial grid oxide layer 10 surface
Grow new grid oxide layer 20；The thickness of new grid oxide layer 20 is thick with the target that thickness summation is required grid oxide layer of initial grid oxide layer 10
Degree；Wherein, the first growth rate is more than the second growth rate.
In the present embodiment, owing to the first growth rate is more than the second growth rate, can be, but not limited to according to actual process
The growth time growth time less than new grid oxide layer 20 of initial grid oxide layer 10 is set.It is also preferred that the left during the growth of new grid oxide layer 20
Between not less than 10s.Here, first contains O2O in atmosphere2Dividing potential drop can be higher than second containing O2O in atmosphere2Dividing potential drop, high first
O2Dividing potential drop two-forty can promote the fast-growth of initial grid oxide layer 10 reach close to target thickness and obtain the initial of densification
Grid oxide layer 10, the 2nd low O2Dividing potential drop and low growth rate can make new grid oxide layer 20 slowly grow to target thickness, can keep away
Exempt from the too much waste of O, it is also possible to make the reaction of O Yu Si fully generate SiO2, avoid SiO simultaneously2+ Si → 2SiO reaction causes
Initial grid oxide layer 10 and the disappearance of new grid oxide layer 20, obtain uniform new grid oxide layer 20 further；At the same time it can also be at the beginning of arranging
The growth temperature of beginning grid oxide layer 10 is higher than the growth temperature of new grid oxide layer 20, thus improves the first of initial grid oxide layer 10 further
Growth rate, the reaction making O Yu Si is more abundant, obtains the initial grid oxide layer 10 of densification, and, the growth temperature of new grid oxide layer 20
Spend relatively low, the slowly growth of the newest grid oxide layer 20 and the abundant reaction of O Yu Si, form uniform new grid oxide layer 20.
Here, set growth temperature, Slow cooling after the growth of new grid oxide layer 20 it are to slowly warm up to during the growth of initial grid oxide layer 10
Or furnace cooling.
In the present embodiment, when new grid oxide layer 20 grows, use noble gas as main gas, O2As auxiliary gas.
It is also preferred that the left the flow proportional of the flow of noble gas and oxygen is not less than 10slm, oxygen not less than 500:1, the flow of noble gas
The flow of gas is not less than 0.02slm.In the present embodiment, when initial grid oxide layer 10 grows, employing reacting gas is N2O and H2Mixed
Close gas, or O2And H2Mixed gas.During it is also preferred that the left initial grid oxide layer 10 grows, N2O and H2Flow proportional be (180
～220): 1, or O2With H2Flow proportional be (180～220): 1；When initial grid oxide layer 10 grows, it is also preferred that the left the temperature used
Degree is 850～1200 DEG C, and pressure is 12～18Torr.
It should be noted that in other embodiments of the invention, at an O2Dividing potential drop is higher than the 2nd O2Under conditions of dividing potential drop,
Temperature when new grid oxide layer 20 grows can also be equal to the growth temperature of initial grid oxide layer 10, it is also possible to higher than initial grid oxide layer 10
Growth temperature, as long as guaranteeing when new grid oxide layer 10 grows that reaction is fully.
Although the present invention discloses as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention some more
Moving and retouching, the protection domain that the present invention is advocated should be as the criterion with claims.
Claims (10)
1. the preparation method of a grid oxide layer, it is characterised in that including:
Step 01 a: silicon substrate is provided；
Step 02: first containing O2Under atmosphere, use the first growth rate to grow initial grid oxide layer in surface of silicon；
Step 03: second containing O2Under atmosphere, use the second growth rate to grow new grid oxide layer on initial grid oxide layer surface；Newly
The thickness of grid oxide layer and the target thickness that thickness summation is required grid oxide layer of initial grid oxide layer；Wherein, the first growth rate is big
In the second growth rate.
The preparation method of grid oxide layer the most according to claim 1, it is characterised in that the growth time of initial grid oxide layer is less than
The growth time of new grid oxide layer.
The preparation method of grid oxide layer the most according to claim 2, it is characterised in that the growth time of new grid oxide layer is not less than
10s。
The preparation method of grid oxide layer the most according to claim 1, it is characterised in that first contains O2O in atmosphere2Dividing potential drop is high
In second containing O2O in atmosphere2Dividing potential drop.
The preparation method of grid oxide layer the most according to claim 1, it is characterised in that the growth temperature of described initial grid oxide layer
Growth temperature higher than described new grid oxide layer.
The preparation method of grid oxide layer the most according to claim 1, it is characterised in that when new grid oxide layer grows, use lazy
Property gas is as main gas, O2As auxiliary gas.
The preparation method of grid oxide layer the most according to claim 6, it is characterised in that the flow of noble gas and the stream of oxygen
Amount ratio is not less than 500:1.
The preparation method of grid oxide layer the most according to claim 6, it is characterised in that the flow of noble gas is not less than
10slm, the flow of oxygen is not less than 0.02slm.
The preparation method of grid oxide layer the most according to claim 1, it is characterised in that during initial grid oxide layer growth, uses anti-
Answering gas is N2O and H2Mixed gas, or O2And H2Mixed gas.
The preparation method of grid oxide layer the most according to claim 9, it is characterised in that during initial grid oxide layer growth, N2O and H2
Flow proportional be (180～220): 1, or O2With H2Flow proportional be (180～220): 1.
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| CN201610854700.6A CN106206260B (en) | 2016-09-27 | 2016-09-27 | A kind of preparation method of grid oxide layer |
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| CN201610854700.6A CN106206260B (en) | 2016-09-27 | 2016-09-27 | A kind of preparation method of grid oxide layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447497A (en) * | 2019-08-28 | 2021-03-05 | 长鑫存储技术有限公司 | Oxide layer forming method, semiconductor device manufacturing method and semiconductor device |
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|---|---|---|---|---|
| US7115469B1 (en) * | 2001-12-17 | 2006-10-03 | Spansion, Llc | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process |
| CN103165432A (en) * | 2013-03-15 | 2013-06-19 | 上海华力微电子有限公司 | Preparation method for gate oxide layer |
| CN103441064A (en) * | 2013-06-24 | 2013-12-11 | 上海华力微电子有限公司 | Method for improving gate oxide surface uniformity |
| CN103681288A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | High-reliability growth technique for low-temperature gate oxide layer |
| CN105185700A (en) * | 2015-08-11 | 2015-12-23 | 上海华力微电子有限公司 | Preparation method of ultra-thin gate oxygen |
-
2016
- 2016-09-27 CN CN201610854700.6A patent/CN106206260B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115469B1 (en) * | 2001-12-17 | 2006-10-03 | Spansion, Llc | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process |
| CN103165432A (en) * | 2013-03-15 | 2013-06-19 | 上海华力微电子有限公司 | Preparation method for gate oxide layer |
| CN103441064A (en) * | 2013-06-24 | 2013-12-11 | 上海华力微电子有限公司 | Method for improving gate oxide surface uniformity |
| CN103681288A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | High-reliability growth technique for low-temperature gate oxide layer |
| CN105185700A (en) * | 2015-08-11 | 2015-12-23 | 上海华力微电子有限公司 | Preparation method of ultra-thin gate oxygen |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447497A (en) * | 2019-08-28 | 2021-03-05 | 长鑫存储技术有限公司 | Oxide layer forming method, semiconductor device manufacturing method and semiconductor device |
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