CN106206236B - Etching apparatus and the brilliant back of the body etching edge method for removing brilliant back of the body edge film - Google Patents

Etching apparatus and the brilliant back of the body etching edge method for removing brilliant back of the body edge film Download PDF

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Publication number
CN106206236B
CN106206236B CN201610776793.5A CN201610776793A CN106206236B CN 106206236 B CN106206236 B CN 106206236B CN 201610776793 A CN201610776793 A CN 201610776793A CN 106206236 B CN106206236 B CN 106206236B
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China
Prior art keywords
baffle
wafer
etching
brilliant back
etched
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CN201610776793.5A
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Chinese (zh)
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CN106206236A (en
Inventor
范荣伟
陈宏璘
龙吟
王恺
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Etching edge method is carried on the back the present invention provides a kind of etching apparatus and for removing brilliant the brilliant of back of the body edge film.Etching apparatus according to the present invention includes：Upper shielding baffle, side barriers baffle and bottom shield baffle；Wherein, upper shielding baffle is covered in the upper surface for the wafer that will be etched；Side barriers baffle is covered in the side surface for the wafer that will be etched；Sidepiece of the bottom shield baffle arrangement in the pedestal for being used to support the wafer that will be etched so that pedestal covers the central area of the lower surface for the wafer that will be etched together with bottom shield baffle.In addition, brilliant back of the body etching edge method includes according to the present invention：Atomic layer sull deposition is performed to wafer；The post-depositional wafer of atomic layer sull is arranged into brilliant back of the body etching edge board；Etching is performed in crystalline substance carries on the back etching edge board to remove brilliant back of the body film.

Description

Etching apparatus and the brilliant back of the body etching edge method for removing brilliant back of the body edge film
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to which a kind of be used to remove brilliant back of the body thin edge The brilliant back of the body etching edge method of film.
Background technology
With the development of integrated circuit technology, semiconductor technology also becomes increasingly complex, and many new processes are introduced into, such as former Sublayer thin film deposition processes, because of its good step coverage rate the advantages that, are widely used in below 28nm products.
However, atomic layer sull deposition is due to its technique and board characteristic, it is easily unnecessary in crystalline substance back of the body marginal deposit Sull, this layer of unnecessary sull can have an immense impact on the monolithic film membrane structure of the crystalline substance back of the body, and cause crystalline substance Circle causes the greatest differences of crystal round fringes and crystal circle center's area thickness, and then produce after last part technology multiple layer metal technique Photoetching is fallen glue and the problems such as defocusing, and tremendous influence is caused to yield.In some cases, brilliant back of the body marginal position and center oxygen Compound film thickness can there are notable difference.The reason for causing this problem is, when wafer is jacked up by the wafer support bolt on pedestal Afterwards, plasma can be diffused into the wafer behind fringe region jacked up, and then grow by the gap between pedestal and packing ring Sull.
In view of the above problems, needing just overcome its influence to subsequent technique by complicated processing step, increase Process complexity is added, while some counter productives can be produced.
The content of the invention
The technical problems to be solved by the invention are to be directed to that drawbacks described above exists in the prior art, there is provided a kind of brilliant back of the body edge Lithographic method, can effectively remove the sull that brilliant back of the body marginal position is grown into during atom layer deposition process, keep away Yield loss caused by exempting from subsequently, provides safeguard for semiconductor yields.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided a kind of etching apparatus, including：Upper shielding baffle, side Face covers baffle and bottom shield baffle；Wherein, upper shielding baffle is covered in the upper surface for the wafer that will be etched；Side screen Cover the side surface that baffle is covered in the wafer that will be etched；Bottom shield baffle arrangement is being used to support the wafer that will be etched The sidepiece of pedestal so that pedestal covers the central area of the lower surface for the wafer that will be etched together with bottom shield baffle.
Preferably, upper shielding baffle, side shield baffle and bottom shield baffle three mutually move alone.
Preferably, it is upper to shield baffle, side shield baffle and bottom shield the baffle upper surface with wafer, the side of wafer respectively The distance of surface and the lower surface of wafer is adjustable.
Preferably, the size of bottom shield baffle is adjustable and is replaceable.
Moreover, in order to realize above-mentioned technical purpose, according to the present invention, there is provided a kind of to be used to remove brilliant back of the body edge film Crystalline substance back of the body etching edge method, it is characterised in that including：
First step：Atomic layer sull deposition is performed to wafer；
Second step：The post-depositional wafer of atomic layer sull is arranged into brilliant back of the body etching edge board；
Third step：Etching is performed in crystalline substance carries on the back etching edge board to remove brilliant back of the body film.
Preferably, in the second step, the upper surface for the wafer that will be etched is covered using upper shielding baffle；Utilize side Shielding baffle covers the side surface for the wafer that will be etched；Bottom shield baffle arrangement is being used to support the wafer that will be etched Pedestal sidepiece so that pedestal covers the center of the lower surface for the wafer that will be etched together with bottom shield baffle Domain.
Preferably, upper shielding baffle, side shield baffle and bottom shield baffle three mutually move alone.
Preferably, it is upper to shield baffle, side shield baffle and bottom shield the baffle upper surface with wafer, the side of wafer respectively The distance of surface and the lower surface of wafer is adjustable.
Preferably, the size of bottom shield baffle is adjustable and is replaceable.
Brief description of the drawings
With reference to attached drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention And be more easily understood its with the advantages of and feature, wherein：
Fig. 1 schematically shows atom layer deposition process board wafer placing component schematic top plan view.
Fig. 2 schematically shows plasma diffusion and carries on the back fringe region side schematic view to crystalline substance.
Fig. 3 schematically shows brilliant back of the body etching edge board according to the preferred embodiment of the invention and sets schematic diagram.
Fig. 4 schematically shows the brilliant back of the body edge according to the preferred embodiment of the invention for being used to remove brilliant back of the body edge film The flow chart of lithographic method.
It should be noted that attached drawing is used to illustrate the present invention, it is not intended to limit the present invention.Note that represent that the attached drawing of structure can It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Embodiment
In order to make present disclosure more clear and understandable, with reference to specific embodiments and the drawings in the present invention Appearance is described in detail.
The present invention is removed by after atomic layer deposition thin film depositing operation, increasing the mode of wafer rear etching edge The film of wafer rear fringe region, and then avoid simplifying follow-up technological process and improve yield.The present invention can effectively be gone Except the sull that brilliant back of the body marginal position is grown into during atom layer deposition process, yield loss caused by avoiding subsequently, Provide safeguard for semiconductor yields.
As depicted in figs. 1 and 2, the basic reason for causing brilliant back of the body fringe region undesired oxide deposition is that plasma can nothing Any obstruction is diffused into brilliant back of the body fringe region, so as to deposit sull.Due in atomic layer deposition process, wafer quilt 6 wafer supports, which are fastened, jacks up about 3mm, and plasma pierces wafer rear by the gap between packing ring and wafer, causes the brilliant back of the body to have Atomic layer oxide generates.
In order to which from the sull for removing brilliant back of the body edge, mode of the invention is that brilliant back of the body etching edge is carried out to it.
Different from conventional etching mode, conventional method needs crystal column surface to have photoresist stop, need not be carved with protection The region of erosion；Different from crystal edge etching at the same time, it can etch into crystal face region, while brilliant back of the body region etch is concentrated mainly on crystal edge Region very little distance.Equipment used in the present invention carries out the setting such as Fig. 4, so as to distance of the brilliant back of the body etching of adjustment freely etc.. Device therefor is desirably integrated into atom layer deposition process board or is single etching apparatus.
Fig. 3 schematically shows brilliant back of the body etching edge board according to the preferred embodiment of the invention and sets schematic diagram.
Brilliant back of the body etching edge board according to the preferred embodiment of the invention includes：It is upper shielding baffle, side barriers baffle with And bottom shield baffle；Wherein, upper shielding baffle is covered in the upper surface for the wafer that will be etched；Side barriers baffle is covered in By the side surface for the wafer being etched；Bottom shield baffle arrangement the pedestal for being used to support the wafer that will be etched sidepiece, So that pedestal covers the central area of the lower surface for the wafer that will be etched together with bottom shield baffle.
Thus, brilliant back of the body etching machine bench is in the application shielding such as central area of crystal face front, wafer side and wafer rear Device is protected, and prevents to produce plasma in protected area, to protect it from being etched.
Preferably, upper shielding baffle, side shield baffle and bottom shield baffle three mutually move alone, from mutually dry Disturb.
Preferably, it is upper to shield baffle, side shield baffle and bottom shield the baffle upper surface with wafer, the side of wafer respectively The distance of surface and the lower surface of wafer is adjustable.
Preferably, the size of bottom shield baffle can be adjusted and replaced.
Preferably, shield baffle and the distance of wafer is maintained at certain distance, its standard is to avoid protected area from producing Plasma.
Finally, required baffle size is adjusted, and carry out crystalline substance apart from the distance of crystal edge according to the film of brilliant back of the body extraneous growth Etching technics is carried on the back, to remove the unnecessary film of the brilliant back of the body.
Fig. 4 schematically shows the brilliant back of the body edge according to the preferred embodiment of the invention for being used to remove brilliant back of the body edge film The flow chart of lithographic method.
As shown in figure 4, the brilliant back of the body etching edge side according to the preferred embodiment of the invention for being used to remove brilliant back of the body edge film Method includes：
First step S1：Atomic layer sull deposition is performed to wafer；
Second step S2：The post-depositional wafer of atomic layer sull is arranged into brilliant back of the body etching edge board；
The setting of crystalline substance back of the body etching edge board is as shown in Figure 3.That is, in second step S2, upper shielding baffle covering is utilized By the upper surface for the wafer being etched；The side surface for the wafer that will be etched is covered using side barriers baffle；By bottom shield Sidepiece of the baffle arrangement in the pedestal for being used to support the wafer that will be etched so that pedestal covers together with bottom shield baffle By the central area of the lower surface for the wafer being etched.
Third step S3：Etching is performed in crystalline substance carries on the back etching edge board to remove brilliant back of the body film.
The brilliant back of the body etching edge method according to the preferred embodiment of the invention for being used to remove brilliant back of the body edge film can be in letter Avoid other counter productives to produce while changing technological process, contribute for Yield lmproved.Preferred embodiment according to the present invention Be used for remove brilliant back of the body edge film brilliant back of the body etching edge method can effectively remove it is raw during atom layer deposition process The sull of brilliant back of the body marginal position is grown to, yield loss caused by avoiding subsequently, provides safeguard for semiconductor yields.
For example, in the specific implementation, 28nm products application the method can be selected, the oxidation of brilliant back of the body edge can be effectively improved The problem of thing uneven film thickness, contribute for Yield lmproved.
It should be noted that unless stated otherwise or point out, the otherwise term in specification " first ", " second ", " The descriptions such as three " are used only for distinguishing various components, element, step etc. in specification, without being intended to indicate that various components, member Logical relation or ordinal relation between element, step etc..
It is understood that although the present invention is disclosed as above with preferred embodiment, but above-described embodiment and it is not used to Limit the present invention.For any those skilled in the art, without departing from the scope of the technical proposal of the invention, Many possible changes and modifications are all made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as With the equivalent embodiment of change.Therefore, every content without departing from technical solution of the present invention, the technical spirit pair according to the present invention Any simple modifications, equivalents, and modifications made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection It is interior.

Claims (9)

  1. A kind of 1. etching apparatus, it is characterised in that including：Upper shielding baffle, side barriers baffle and bottom shield baffle；Its In, upper shielding baffle is covered in the upper surface for the wafer that will be etched；Side barriers baffle is covered in the wafer that will be etched Side surface；Sidepiece of the bottom shield baffle arrangement in the pedestal for being used to support the wafer that will be etched so that pedestal and bottom screen Cover the central area that baffle covers the lower surface for the wafer that will be etched together.
  2. 2. etching apparatus according to claim 1, it is characterised in that above shield baffle, side shield baffle and bottom shield Baffle three mutually moves alone.
  3. 3. etching apparatus according to claim 1 or 2, it is characterised in that above shield baffle, side shield baffle and bottom screen The distance for covering the lower surface of upper surface of the baffle respectively with wafer, the side surface of wafer and wafer is adjustable.
  4. 4. etching apparatus according to claim 1 or 2, it is characterised in that the size of bottom shield baffle is adjustable And it is replaceable.
  5. A kind of 5. brilliant back of the body etching edge method for being used to remove brilliant back of the body edge film, it is characterised in that including：
    First step：Atomic layer sull deposition is performed to wafer；
    Second step：The post-depositional wafer of atomic layer sull is arranged into as described in any one in claim 1-4 Etching apparatus in；
    Third step：Etching is performed in the etching apparatus to remove brilliant back of the body film.
  6. 6. the brilliant back of the body etching edge method according to claim 5 for being used to remove brilliant back of the body edge film, it is characterised in that In second step, the upper surface for the wafer that will be etched is covered using upper shielding baffle；Will be by using the covering of side barriers baffle The side surface of the wafer of etching；By bottom shield baffle arrangement in the sidepiece for the pedestal for being used to support the wafer that will be etched, make Obtain the central area that pedestal covers the lower surface for the wafer that will be etched together with bottom shield baffle.
  7. 7. the brilliant back of the body etching edge method for being used to remove brilliant back of the body edge film according to claim 5 or 6, its feature exist In upper shielding baffle, side shield baffle and bottom shield baffle three mutually move alone.
  8. 8. the brilliant back of the body etching edge method for being used to remove brilliant back of the body edge film according to claim 5 or 6, its feature exist In upper to shield baffle, side shield baffle and bottom shield the baffle upper surface with wafer, the side surface of wafer and wafer respectively The distance of lower surface be adjustable.
  9. 9. the brilliant back of the body etching edge method for being used to remove brilliant back of the body edge film according to claim 5 or 6, its feature exist In the size of bottom shield baffle is adjustable and is replaceable.
CN201610776793.5A 2016-08-30 2016-08-30 Etching apparatus and the brilliant back of the body etching edge method for removing brilliant back of the body edge film Active CN106206236B (en)

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CN106206236B true CN106206236B (en) 2018-05-04

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108470670B (en) * 2018-02-26 2020-07-24 德淮半导体有限公司 Etching electrode and edge etching device
CN113972124B (en) * 2020-07-23 2023-09-29 中微半导体设备(上海)股份有限公司 Grounding assembly, plasma processing device and working method thereof
CN113838746B (en) * 2021-11-29 2022-03-11 西安奕斯伟材料科技有限公司 Method for improving flatness of epitaxial wafer and epitaxial wafer
CN115642112A (en) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 Back sealing device and method for silicon wafer

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636267A (en) * 2001-12-21 2005-07-06 纳托尔公司 Electrochemical edge and bevel cleaning process and system
CN101589457A (en) * 2007-01-26 2009-11-25 朗姆研究公司 Configurable bevel etcher
TW201306122A (en) * 2011-05-11 2013-02-01 Lam Res Corp High pressure bevel etch process
CN104517829A (en) * 2013-10-04 2015-04-15 朗姆研究公司 Tunable upper plasma-exclusion-zone ring for a bevel etcher
TW201604922A (en) * 2014-04-30 2016-02-01 蘭姆研究公司 Real-time edge encroachment control for wafer bevel
CN105551925A (en) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 Dry etching device

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Publication number Priority date Publication date Assignee Title
KR101540609B1 (en) * 2009-02-24 2015-07-31 삼성전자 주식회사 Apparatus for etching edge of wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1636267A (en) * 2001-12-21 2005-07-06 纳托尔公司 Electrochemical edge and bevel cleaning process and system
CN101589457A (en) * 2007-01-26 2009-11-25 朗姆研究公司 Configurable bevel etcher
TW201306122A (en) * 2011-05-11 2013-02-01 Lam Res Corp High pressure bevel etch process
CN104517829A (en) * 2013-10-04 2015-04-15 朗姆研究公司 Tunable upper plasma-exclusion-zone ring for a bevel etcher
TW201604922A (en) * 2014-04-30 2016-02-01 蘭姆研究公司 Real-time edge encroachment control for wafer bevel
CN105551925A (en) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 Dry etching device

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