CN106206217B - Special-shaped anode structure and processing technology thereof - Google Patents
Special-shaped anode structure and processing technology thereof Download PDFInfo
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- CN106206217B CN106206217B CN201610777972.0A CN201610777972A CN106206217B CN 106206217 B CN106206217 B CN 106206217B CN 201610777972 A CN201610777972 A CN 201610777972A CN 106206217 B CN106206217 B CN 106206217B
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- anode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/06—Electron or ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention discloses a special-shaped anode structure applied to manufacturing of a terahertz device electron gun, which is obtained by processing molybdenum through vacuum melting.
Description
Technical field
The present invention relates to THz devices electron gun manufacturing fields, and in particular to it is a kind of abnormity anode construction and its processing work
Skill.
Background technique
Intensive electromagnetism in order to adapt to new international strategies pattern and world's military technology development trend, in battlefield surroundings
Signal, complicated signal characteristic all propose high requirement to the development of military electronic technique and information technology, only by a certain
The microwave device of frequency range can no longer meet the demand of military equipment development, this just promotes people to go to explore, develop new frequency spectrum
Resource.Terahertz frequency between microwave and it is infrared between, system takes into account the advantage of electronic system and optical system, is known as
The mankind further recognize the world, natural " third eyes " after microwave, light wave.It occupy this THz wave and causes people's
Pay attention to, THz devices technology obtains the concern and research of many experts of countries in the world related scientific research mechanism, the present invention be exactly
The Terahertz electron gun that is suitable for invented under the background of THz devices is developed to manufacture.
Summary of the invention
In view of the above drawbacks of the prior art, the present invention provides a kind of special-shaped anode construction and its processing technology, the sun
Circular anode configuration used in extremely different O-shaped vacuum device electron guns, the rectangular structure of anode through-hole, the anode electron provide
Energy plays the role of accelerating electronics, plays control acceleration to rectangular electron beam.
To achieve the goals above, the present invention is to realize by the following technical solutions: a kind of abnormity anode construction,
Including anode strip, anode strip center is equipped with rectangular anode through-hole, is additionally provided with symmetrical 4 circular through holes two-by-two on anode strip.
Further, the anode strip diameter Ф D1,0.5 ~ 2mm of thickness；The anode strip is described using molybdenum disk
Rectangular anode through-hole passes through for electron beam；The two of them circular through hole is connected and fixed for anode with electron gun；It is described
Pass through positioning finger setting when another two circular through hole is assembled for anode and THz devices cavity.
Steps are as follows for the processing technology of the abnormity anode construction:
A) vacuum melting molybdenum blank is put into 900~950 DEG C of hydrogen furnace annealings, keeps the temperature 3~5 minutes,
Purpose is to remove material internal stress, convenient for turnery processing;
B) by vacuum melting molybdenum blank turnery processing, diameter Ф D1, the molybdenum disk of 0.5 ~ 2mm of thickness are processed into；
C) the good molybdenum disk of turning is used into spark erosion technique, processes rectangular anode through-hole and four circular through holes；
D) by the blank after electrical discharge machining, using slow silk cutting processing technology, Precision Machining abnormity anode configuration
Structure；
E) the special-shaped anode processed is subjected to chemical deoiling and degreasing cleaning；
F) cleaned special-shaped anode is subjected to electrobrightening processing, purpose removes flash removed, prevents it from producing in electron gun
Raw high voltage arc.
The invention has the advantages that circular anode configuration used in the different O-shaped vacuum device electron guns of the anode, anode
The rectangular structure of through-hole, the anode electron provide energy, play the role of accelerating electronics, play control to rectangular electron beam and add
Speed effect, can get ideal beam shapes.
Detailed description of the invention
Fig. 1 is a kind of special-shaped anode construction schematic diagram of the present invention；
Fig. 2 is application example structural schematic diagram of the present invention.
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to
Specific embodiment, the present invention is further explained.
As shown in Fig. 2, a kind of abnormity anode construction, including it includes anode strip, anode strip center is logical equipped with rectangular anode
Hole is additionally provided with symmetrical 4 circular through holes two-by-two on anode strip.
Further, the anode strip diameter Ф D1,0.5 ~ 2mm of thickness, the anode strip are described using molybdenum disk
Rectangular anode through-hole passes through for electron beam, and described two circular through holes are connected and fixed for anode with electron gun, and described another two
Pass through positioning finger setting when a circular through hole is assembled for anode and THz devices cavity.
The processing technology step of the abnormity anode construction is described below:
A) vacuum melting molybdenum blank is put into 900~950 DEG C of hydrogen furnace annealings, keeps the temperature 3~5 minutes, it is therefore intended that removal
Material internal stress is convenient for turnery processing.
B) by vacuum melting molybdenum blank turnery processing, diameter Ф 60mm, the molybdenum disk of thickness 1mm are processed into；
C) by the good molybdenum disk of turning use spark erosion technique, process rectangular anode through-hole, rectangular through-hole having a size of
Broadside 0.6mm, long side 7mm, process four circular through holes, two circular through holes having a size of diameter Ф 2mm, the hole heart away from for 36mm,
Another two circular through hole is having a size of diameter Ф 1mm, and the hole heart is away from for 14.6mm；
D) by the blank after electrical discharge machining, using slow silk cutting processing technology, Precision Machining abnormity anode configuration
Structure, specific size are shown in Fig. 2；
E) the special-shaped anode processed is subjected to chemical deoiling and degreasing cleaning；
F) cleaned special-shaped anode is subjected to electrobrightening processing, purpose removes flash removed, prevents it from producing in electron gun
Raw high voltage arc.
The anode being fabricated to of the present embodiment is different from circular anode configuration used in O-shaped vacuum device electron gun, anode
The rectangular structure of through-hole, the anode electron provide energy, play the role of accelerating electronics, play control to rectangular electron beam and add
Speed effect, can get ideal beam shapes.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (2)
1. it is a kind of abnormity anode construction, it is characterised in that: it includes anode strip, the anode strip with a thickness of 0.5 ~ 2mm；It is described
The center of anode strip is machined with the rectangular anode through-hole (101) passed through for electron beam；The anode strip left and right ends are symmetrical
There are four circular through holes for processing, wherein two circular through holes (102) are connected and fixed for anode with electron gun, another two
By positioning finger setting when the circular through hole (103) assembles for anode and THz devices cavity, the anode strip is used
Be molybdenum disk.
2. a kind of processing technology of abnormity anode construction, which is characterized in that its processing step is as follows:
Vacuum melting molybdenum blank is put into 900~950 DEG C of hydrogen furnace annealings, keeps the temperature 3~5 minutes,
Purpose is to remove material internal stress, convenient for turnery processing;
B) by vacuum melting molybdenum blank turnery processing, diameter Ф D1, the molybdenum disk of 0.5 ~ 2mm of thickness are processed into；
C) the good molybdenum disk of turning is used into spark erosion technique, processes rectangular anode through-hole and four circular through holes；
D) by the blank after electrical discharge machining, using slow silk cutting processing technology, Precision Machining abnormity anode configuration knot
Structure；
E) the special-shaped anode processed is subjected to chemical deoiling and degreasing cleaning；
F) cleaned special-shaped anode is subjected to electrobrightening processing, purpose removes flash removed, prevents it from generating height in electron gun
Pressure sparking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610777972.0A CN106206217B (en) | 2016-08-31 | 2016-08-31 | Special-shaped anode structure and processing technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610777972.0A CN106206217B (en) | 2016-08-31 | 2016-08-31 | Special-shaped anode structure and processing technology thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206217A CN106206217A (en) | 2016-12-07 |
| CN106206217B true CN106206217B (en) | 2019-03-12 |
Family
ID=58086152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610777972.0A Active CN106206217B (en) | 2016-08-31 | 2016-08-31 | Special-shaped anode structure and processing technology thereof |
Country Status (1)
| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1652022A1 (en) * | 1988-11-02 | 1991-05-30 | Московский институт стали и сплавов | Method of thermal rejuvenation of refractory filler of spent moulding sand |
| CN1118933A (en) * | 1993-09-28 | 1996-03-20 | 株式会社金星社 | In-line type electron guns for color picture tube |
| US20060138965A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | Magnetron |
| CN105655851A (en) * | 2015-12-29 | 2016-06-08 | 中国科学技术大学 | Non-relativistic electron beam induced dielectric waveguide-based terahertz radiation source |
-
2016
- 2016-08-31 CN CN201610777972.0A patent/CN106206217B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1652022A1 (en) * | 1988-11-02 | 1991-05-30 | Московский институт стали и сплавов | Method of thermal rejuvenation of refractory filler of spent moulding sand |
| CN1118933A (en) * | 1993-09-28 | 1996-03-20 | 株式会社金星社 | In-line type electron guns for color picture tube |
| US20060138965A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | Magnetron |
| CN105655851A (en) * | 2015-12-29 | 2016-06-08 | 中国科学技术大学 | Non-relativistic electron beam induced dielectric waveguide-based terahertz radiation source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206217A (en) | 2016-12-07 |
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Address after: 241002 Huaxia science and Technology Park, hi tech Development Zone, Yijiang District, Wuhu, Anhui Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241002 Huaxia science and Technology Park, hi tech Development Zone, Yijiang District, Wuhu, Anhui Patentee before: Anhui Huadong Polytechnic Institute |
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